CN213457578U - Thin film transistor active matrix lithium niobate display chip - Google Patents

Abstract

The utility model provides a thin-film transistor active matrix lithium niobate display chip based on lithium niobate crystal electro-optical effect, include: the device comprises upper and lower glass substrates, a TFT array module, a lithium niobate electro-optic modulation module, a transparent electrode and an optical filter; the lithium niobate electro-optical modulation module comprises a lithium niobate crystal layer and a dielectric reflector matrix, the transparent electrode is close to one side of the lithium niobate electro-optical modulation module to form a black matrix, and the black matrix and the dielectric reflector matrix in the lithium niobate electro-optical modulation module are in a position complementary relation. The utility model discloses adjust luminance the liquid crystal module replacement in the traditional TFT-LCD structure for lithium niobate electro-optical modulation module, owing to adjust luminance the in-process and do not need the molecule to rotate, consequently have higher response speed, and lithium niobate material itself has higher refracting index, and this all is favorable to the further optimization of device. In addition, the complicated operation of crystal filling in the traditional photoelectric display chip is omitted, the process steps are simplified, and the cost is saved.

Description

Thin film transistor active matrix lithium niobate display chip

Technical Field

The utility model relates to a semiconductor manufacturing field especially relates to a thin-film transistor active matrix lithium niobate display chip based on lithium niobate crystal electro-optical effect and manufacturing method thereof.

Background

The TFT-LCD (Thin film transistor liquid crystal display) industry started in the last 90 th century and has become the mainstream technology of flat panel display. The liquid crystal does not emit light, and the function of the liquid crystal is to regulate and control the emergent light, when the current generates electric field change through the transistor, liquid crystal molecules are deflected, so that the polarization of light is changed, and then the bright and dark states of a Pixel (Pixel) are determined by utilizing the polaroid.

Fig. 1 is a schematic diagram of a TFT-LCD structure in the prior art. As can be seen from fig. 1, the TFT-LCD structure includes a polarizer 1, a lower glass substrate 2, an upper glass substrate 10, a TFT array module 3, a liquid crystal module 4, a transparent electrode 7, a black matrix 8, and a filter 9; the TFT array module 3 includes a transparent pixel electrode, and the electric field distribution in the liquid crystal layer is controlled by controlling the voltages at the two ends of the TFT array module 3 and the transparent electrode 7, so as to implement the display function.

As is well known, liquid crystal materials have characteristics of large birefringence, dielectric anisotropy, and the like, and thus have been used in the field of spatial light modulation earlier. However, since the tuning mechanism is derived from the movement of liquid crystal molecules, the response speed is limited. Lithium niobate crystal is one of the most widely used novel inorganic materials at present, is a unique electro-optic medium, and through the regulation and control of an external electric field, emergent light penetrating through the lithium niobate crystal can generate a certain phase shift, because the orientation of inherent dipole moment in the crystal tends to be consistent or a certain dominant orientation, the refractive index of the crystal is inevitably changed, namely, the external electric field changes the optical power of the crystal. Compared with the spatial light modulation of liquid crystal materials, the lithium niobate crystal has higher refractive index and faster response speed, and is widely applied to various integrated electro-optical modulation devices at present.

SUMMERY OF THE UTILITY MODEL

Utility model purpose: aiming at the defects of the prior art, the invention aims to provide a thin film transistor active matrix lithium niobate display chip based on the lithium niobate crystal electro-optic effect and a manufacturing method thereof, so that the device is rapidly prepared, the preparation process is simplified, and the cost is reduced. The invention provides a thin film transistor active matrix lithium niobate display chip structure, which comprises: the device comprises upper and lower glass substrates, a TFT array module, a lithium niobate electro-optic modulation module, a transparent electrode and an optical filter; the lithium niobate electro-optic modulation module comprises a lithium niobate crystal layer and a dielectric reflector matrix, the transparent electrode is close to one side of the lithium niobate electro-optic modulation module to form a black matrix, and the black matrix and the dielectric reflector matrix in the lithium niobate electro-optic modulation module are in a position complementary relationship; the dielectric reflector matrix can be obtained by an etching method, the lithium niobate electro-optic modulation module can present independent phase modulation periodic structure unit array pixels, and independent regulation and control of each pixel are realized by independently applying an electric field to each pixel pattern; the color filter and the transparent electrode are both attached to the lower side of the upper substrate, and the TFT array module is attached to the upper side of the lower substrate.

The utility model discloses the principle: the utility model discloses a thin-film transistor active matrix lithium niobate display chip based on lithium niobate crystal electro-optical effect to the liquid crystal module among the lithium niobate electro-optical modulation module replacement TFT-LCD, because the lithium niobate electro-optical modulation in-process need not the rotation of molecule, consequently response speed is far higher than TFT-LCD, according to the electro-optical effect of lithium niobate, through the voltage that changes lithium niobate pixel cell both ends, adjust the phase shift of emergent light, and then make finally obtain lithium niobate spatial light modulator device and have the characteristics that the parameter is nimble tunable.

The lithium niobate crystal adopted in the utility model is grown and manufactured by adopting a pulling method, and the dielectric reflector matrix in the lithium niobate electro-optical modulation module can be obtained by an etching method, so that the lithium niobate electro-optical modulation module presents independent phase modulation periodic structure unit array pixels, and each pixel is independently regulated and controlled by independently applying an electric field to each pixel pattern; and according to the phase shift formula generated by Pockels media:

by adjusting the field strength between the pixel electrode and the common electrode, an independent phase shift for each pixel can be obtained.

Further, the electric field E is added in the direction parallel to the light propagation direction, so that a lithium niobate longitudinal phase modulator can be formed;

alternatively, the magnitude of the voltage E may range from about 1V to several thousand volts for a longitudinal modulator.

Furthermore, the phase modulator is arranged between Fabry-Perot interferometers formed by dielectric reflector matrixes, so that light intensity modulation can be realized, a lithium niobate electro-optical modulation module is further formed, and the lithium niobate electro-optical modulation module is obtained according to a formula

In the formula

;

The transmittance of the lithium niobate electro-optical modulation module is related to the reflectivity of the dielectric reflector, different light intensity modulation effects can be realized by selecting the dielectric reflector made of different materials, and then the output light intensity is regulated by independently applying voltage to each pixel.

Furthermore, the transparent electrode is close to one side of the lithium niobate electro-optical modulation module to form a black matrix, and the black matrix and a dielectric reflector matrix in the lithium niobate electro-optical modulation module are in a position complementary relationship, so that light crosstalk of the lithium niobate electro-optical modulation module among different pixels can be effectively avoided.

The pixel patterns of the array structure of the lithium niobate electro-optical modulation module have various setting modes; wherein the polarization direction of the lithium niobate crystal layer is always vertical to the substrate.

Optionally, the pixel pattern is square or circular;

furthermore, the pixel pattern is square, the side length of the pixel pattern is d, and d is more than or equal to 1 mu m and less than or equal to 10 mu m;

furthermore, the pixel pattern is in a disc shape, the radius of the pixel pattern is r, and r is more than or equal to 0.5 mu m and less than or equal to 5 mu m;

furthermore, the thickness of the lithium niobate crystal layer is h, and h is more than or equal to 0.3 mu m and less than or equal to 0.9 mu m.

Optionally, for the thin film transistor active matrix lithium niobate display chip structure, the distance between adjacent pixel units is b, and b is greater than or equal to 0.1 and less than or equal to 0.5 μm;

has the advantages that: compared with the traditional TFT-LCD device, the invention prepares the Fabry-Perot light intensity modulator based on the Pockels dielectric property of lithium niobate, utilizes the electro-optic effect of the lithium niobate and combines the multi-beam interference characteristic of the Fabry-Perot etalon, and the modulator is pixelized and applied to a light intensity modulation module of the display chip through selective ultraviolet glue exposure, thereby having larger refractive index and higher response sensitivity.

Drawings

FIG. 1 is a schematic diagram of a prior art TFT-LCD structure;

fig. 2 is a schematic diagram of a thin film transistor active matrix lithium niobate display chip in embodiment 1 of the present invention;

fig. 3 is a schematic plan view of a lithium niobate electro-optical modulation module in embodiment 1 of the present invention.

Detailed Description

The present invention will be described in further detail with reference to examples, in which the starting materials and reagents used are commercially available.

Example 1:

fig. 2 is a schematic diagram of a thin film transistor active matrix lithium niobate display chip provided in this embodiment, where the schematic diagram includes: the device comprises an upper glass substrate 01, a lower glass substrate 09, a TFT array module 02, a lithium niobate electro-optic modulation module 03, a transparent electrode 07 and a filter 08; the lithium niobate electro-optical modulation module 03 comprises a lithium niobate crystal layer 05 and a dielectric reflector matrix 04, the transparent electrode 07 is close to one side of the lithium niobate electro-optical modulation module 03 to form a black matrix 06, and the black matrix 06 and the dielectric reflector matrix 04 in the lithium niobate electro-optical modulation module 03 are in a position complementary relationship; the dielectric reflector matrix 04 can be obtained by an etching method, and can enable the lithium niobate electro-optic modulation module 03 to present independent phase modulation periodic structure unit array pixels, and each pixel can be independently regulated and controlled by independently applying an electric field to each pixel pattern; the color filter 08 and the transparent electrode 07 are attached to the lower side of the upper substrate 01, and the TFT array module 02 is attached to the upper side of the lower substrate 09. Thereby realizing the control of the voltage passing through the device and further realizing the display function.

Preferably, the dielectric reflector can be obtained by stacking a plurality of coatings with different refractive indexes in the modes of electron beam deposition, evaporation, Ion Assisted Deposition (IAD) and the like, and the dielectric reflector matrix 04 can be obtained by dry etching such as reactive chromium ion etching;

preferably, the lithium niobate crystal layer 05 has been uniformly polarized, and the direction of polarization is perpendicular to the substrate;

alternatively, the pixel pattern may be square or circular or other regular and easy-to-handle shape;

optionally, the pixel pattern is square, the side length of the pixel pattern is d, and d =2 μm;

optionally, for the thin film transistor active matrix lithium niobate display chip structure, the pitch between adjacent pixel units is b, and b =0.5 μm;

alternatively, for the lithium niobate crystal layer, the thickness thereof is h, h =0.5 μm.

Fig. 3 is a schematic top view of a lithium niobate electro-optical modulation module provided in this embodiment, which includes a lithium niobate crystal layer 05 and a dielectric mirror matrix 04, a Fabry-Perot cavity is formed between the dielectric mirrors, and the Fabry-Perot cavity and the lithium niobate crystal layer 05 together form a light intensity modulator.

To sum up, the utility model discloses a liquid crystal module replacement for the lithium niobate electro-optical modulation module of adjusting luminance in traditional TFT-LCD structure does not need the molecule to rotate owing to adjust luminance the in-process, consequently has higher response speed, and lithium niobate material itself has higher refracting index, and this all is favorable to the further optimization of device. In addition, the complicated operation of crystal filling in the traditional photoelectric display chip is omitted, the process steps are simplified, and the cost is saved.

It will be apparent to those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims and their equivalents, the present invention is also intended to include such modifications and variations.

Claims (4)

1. A thin film transistor active matrix lithium niobate display chip, comprising: the device comprises upper and lower glass substrates, a TFT array module, a lithium niobate electro-optic modulation module, a transparent electrode and an optical filter; the lithium niobate electro-optical modulation module comprises a lithium niobate crystal layer and a dielectric reflector matrix, the transparent electrode is close to one side of the lithium niobate electro-optical modulation module to form a black matrix, and the black matrix and the dielectric reflector matrix in the lithium niobate electro-optical modulation module are in a position complementary relation.

2. The thin film transistor active matrix lithium niobate display chip of claim 1, wherein the periodic arrangement structure of the lithium niobate electro-optic modulation modules is realized by dry etching such as reactive chromium ion etching.

3. The thin film transistor active matrix lithium niobate display chip of claim 1, wherein a pitch of adjacent pixel cells is b, 0.1. ltoreq. b.ltoreq.0.5 μm.

4. The thin film transistor active matrix lithium niobate display chip of claim 1, wherein the included lithium niobate electro-optic modulation module can also replace a liquid crystal dimming module in all transmissive liquid crystal electro-optic devices.

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