CN213342174U - Circuit for overcurrent detection and protection of IGBT - Google Patents
Circuit for overcurrent detection and protection of IGBT Download PDFInfo
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- CN213342174U CN213342174U CN202022085349.3U CN202022085349U CN213342174U CN 213342174 U CN213342174 U CN 213342174U CN 202022085349 U CN202022085349 U CN 202022085349U CN 213342174 U CN213342174 U CN 213342174U
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Abstract
The utility model provides a circuit that is used for IGBT to overflow and detects and protect, include: the device comprises a control signal input module, an overcurrent protection output module, a filtering module, an IGBT overcurrent detection module and a drive control module; the control signal input module comprises an MCU processor, and the MCU processor is used for sending a PWM control pulse signal to the drive control module and receiving an output signal of the overcurrent protection output module; the overcurrent protection output module is connected with the drive control module and the MCU processor; the filtering module is used for filtering interference signals; the IGBT overcurrent detection module is used for detecting the voltage between the C pole and the E pole of the IGBT, and the output end of the IGBT overcurrent detection module is connected with the input end of the drive control module; drive control module is used for controlling IGBT's slow turn-off, the utility model discloses simple structure, cost are lower, and can realize overflowing to IGBT detecting and soft turn-off more efficiently.
Description
Technical Field
The utility model relates to the field of electronic technology, especially, involve a circuit that is used for IGBT to overflow detection and protection.
Background
The present invention is widely applied to IGBT (Insulated Gate Bipolar Transistor) devices in electrical control. However, in a high-voltage high-power switching type conversion circuit, the IGBT device can fail and be damaged due to overlarge current. In the application process, due to reasons such as overload of a load, the current flowing through the IGBT device can be increased sharply and far exceeds the capacity limit of the IGBT device, at the moment, overcurrent protection needs to be carried out on the IGBT device, the application safety of the IGBT device depends on the quality of an overcurrent protection circuit to a great extent, and the current overcurrent protection circuit has the problems of complex circuit and excessive components, which cause the increase of circuit energy consumption.
In summary, how to provide a circuit for IGBT overcurrent detection and protection, which has a simple structure and a low cost, and can efficiently implement the overcurrent detection and soft turn-off of an IGBT, is a problem that needs to be solved by those skilled in the art.
SUMMERY OF THE UTILITY MODEL
In view of the above-mentioned problems and needs, the present invention provides a circuit for IGBT over-current detection and protection, which can solve the above technical problems by adopting the following technical solutions.
In order to achieve the above object, the utility model provides a following technical scheme: a circuit for IGBT over-current detection and protection comprises: the device comprises a control signal input module, an overcurrent protection output module, a filtering module, an IGBT overcurrent detection module and a drive control module;
the control signal input module comprises an MCU processor, and the MCU processor is used for sending a PWM control pulse signal to the drive control module and receiving an output signal of the overcurrent protection output module;
the overcurrent protection output module comprises an optical coupler isolator U2 and a resistor R1, the resistor R1 is connected between a pin 1 of the optical coupler isolator U2 and a power supply, a pin 2 of the optical coupler isolator U2 is connected with the output end of the drive control module, a pin 3 of the optical coupler isolator U2 is grounded, and a pin 4 of the optical coupler isolator U2 is connected with an I/O end of the MCU processor;
the filtering module comprises a polarity capacitor C1, and the polarity capacitor C1 is connected in parallel between a power supply and the ground;
the IGBT overcurrent detection module is used for detecting the voltage between the C pole and the E pole of the IGBT, and the output end of the IGBT overcurrent detection module is connected with the input end of the drive control module;
the driving control module is used for controlling the IGBT to be turned off slowly and comprises a driving control chip U1.
Further, the IGBT overcurrent detection module includes a threshold comparator U3, a diode D2, a diode D5, a resistor R5, a resistor R6, a resistor R7, and a resistor R8, one end of the resistor R8 is connected in parallel with one end of the resistor R6 and one end of the resistor R7, the other end of the resistor R8 is connected to a power supply, the other end of the resistor R6 is connected in parallel with the positive-phase input end of the threshold comparator U3 and the positive electrode of the diode D5, the other end of the resistor R7 is connected to ground, the negative electrode of the diode D5 is connected to the C electrode of the IGBT, the resistor R5 is connected in parallel between the output end of the threshold comparator U3 and a power supply pin, the output end of the threshold comparator U3 is connected to the negative electrode of the diode D2, and the positive electrode of the diode D2 is connected to the pin 6 of the drive control chip U1.
Furthermore, the resistor R7 is a sliding resistor, and the sliding arm of the resistor R7 is connected to the inverting input terminal of the threshold comparator U3.
Further, the driving control module further includes a resistor R4, a diode D1, a capacitor C2, a zener diode D3 and a zener diode D4, a pin 3 of the driving control chip U1 is connected in parallel with a negative electrode of the zener diode D3 and a G electrode of the IGBT through the resistor R4, a positive electrode of the zener diode D3 is connected in parallel with a positive electrode of the zener diode D4, a negative electrode of the zener diode D4, a positive electrode of the capacitor C2, a negative electrode of the diode D1 and a pin 1 of the driving control chip U1 are connected in parallel with an E electrode of the IGBT, and a positive electrode of the diode D1 and a negative electrode of the capacitor C2 are connected in parallel with a pin 9 of the driving control chip U1 and then connected to ground.
Further, the capacitor C2 is a polar capacitor.
Further, pin 2 of the optocoupler isolator U2 is connected to pin 5 of the drive control chip U1.
Further, a pin 14 of the driving control chip U1 is connected to a pulse output port of the MCU processor through a resistor R2.
Further, the drive control chip U1 is of type EXB 841.
The beneficial effects of the utility model are that, this a circuit structure for IGBT overflows detection and protection is simple, the cost is lower, and can realize overflowing detection and soft turn-off to IGBT by more efficient.
The following description of the preferred embodiments for carrying out the present invention will be made in detail with reference to the accompanying drawings so that the features and advantages of the present invention can be easily understood.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings of the embodiments of the present invention will be briefly described below. The drawings are intended to depict only some embodiments of the invention, and not all embodiments of the invention are limited thereto.
Fig. 1 is a schematic view of the structure of the present invention.
Fig. 2 is a schematic diagram of the circuit interface of the present invention.
Detailed Description
In order to make the technical solution of the present invention, its purpose, technical solution and advantages become clearer, the drawings of the embodiments of the present invention will be combined hereinafter, and the technical solution of the embodiments of the present invention will be clearly and completely described. Like reference symbols in the various drawings indicate like elements. It should be noted that the described embodiments are only some embodiments of the present invention, and not all embodiments. All other embodiments, which can be obtained by a person skilled in the art without any inventive work based on the described embodiments of the present invention, belong to the protection scope of the present invention.
Referring to fig. 1 to 2, a circuit for IGBT overcurrent detection and protection includes: the IGBT driving circuit comprises a control signal input module, an overcurrent protection output module, a filtering module, an IGBT overcurrent detection module and a driving control module, wherein the driving control module is used for controlling the IGBT to be turned off slowly, the driving control module comprises a driving control chip U1, and the driving control chip U1 is EXB 841. The control signal input module comprises an MCU processor, the MCU processor is used for sending PWM control pulse signals to the drive control module and receiving output signals of the overcurrent protection output module, and a pin 14 of the drive control chip U1 is connected with a pulse output port of the MCU processor through a resistor R2. The filtering module comprises a polarity capacitor C1, and the polarity capacitor C1 is connected in parallel between a power supply and the ground.
As shown in fig. 2, the overcurrent protection output module includes an optical coupler isolator U2 and a resistor R1, the resistor R1 is connected between pin 1 of the optical coupler isolator U2 and a power supply, pin 2 of the optical coupler isolator U2 is connected to the output terminal of the drive control module, pin 3 of the optical coupler isolator U2 is grounded, pin 4 of the optical coupler isolator U2 is connected to the I/O terminal of the MCU processor, and pin 2 of the optical coupler isolator U2 is connected to pin 5 of the drive control chip U1.
The IGBT overcurrent detection module is used for detecting the voltage between the C pole and the E pole of an IGBT, the output end of the IGBT overcurrent detection module is connected with the input end of the drive control module, wherein the IGBT overcurrent detection module comprises a threshold comparator U3, a diode D2, a diode D5, a resistor R5, a resistor R6, a resistor R7 and a resistor R8, one end of the resistor R8 is connected with one end of the resistor R6 and one end of the resistor R7 in parallel, the other end of the resistor R8 is connected with a power supply, the other end of the resistor R6 is connected with the positive phase input end of the threshold comparator U3 and the positive pole of the diode D5 in parallel, the other end of the resistor R7 is grounded, the negative pole of the diode D5 is connected with the C pole of the IGBT, the resistor R5 is connected between the output end of the threshold comparator U3 and a power supply pin, and the output end of the threshold comparator U3 is connected with the negative pole of the diode D2, the anode of the diode D2 is connected to the pin 6 of the driving control chip U1, the resistor R7 is a sliding resistor, and the sliding arm of the resistor R7 is connected to the inverting input terminal of the threshold comparator U3.
The driving control module further comprises a resistor R4, a diode D1, a capacitor C2, a zener diode D3 and a zener diode D4, a pin 3 of the driving control chip U1 is connected in parallel with the cathode of the zener diode D3 and the G pole of the IGBT through the resistor R4, the anode of the zener diode D3 is connected in parallel with the anode of the zener diode D4, the cathode of the zener diode D4, the anode of the capacitor C2, the cathode of the diode D1 and a pin 1 of the driving control chip U1 are connected in parallel with the E pole of the IGBT, the anode of the diode D1 and the cathode of the capacitor C2 are connected in parallel with a pin 9 of the driving control chip U1 and then connected to the ground, and the capacitor C2 is a polar capacitor.
In this embodiment, when the voltage output is overloaded or short-circuited, the voltage between the C pole and the E pole of the IGBT becomes large, and then the IGBT is subjected to overcurrent detection by the principle, and overcurrent detection information in this circuit is input to the voltage monitoring pin of the driving control chip U1 through the diode D5, the threshold comparator and the diode D2, so as to eliminate the situation that the forward voltage drop varies with the current, and the zener diode D3 is connected with the zener diode D4 to prevent gate overvoltage. When the IGBT is in a load short circuit or overcurrent state, the circuit can automatically restrain fault current by gradually reducing gate voltage within the allowable time of the IGBT, so that the soft turn-off of the IGBT is realized.
It should be noted that the embodiments of the present invention are only the preferred embodiments for implementing the present invention, and all the obvious modifications and changes belonging to the overall concept of the present invention should fall within the protection scope of the present invention.
Claims (8)
1. A circuit for IGBT over-current detection and protection is characterized by comprising: the device comprises a control signal input module, an overcurrent protection output module, a filtering module, an IGBT overcurrent detection module and a drive control module;
the control signal input module comprises an MCU processor, and the MCU processor is used for sending a PWM control pulse signal to the drive control module and receiving an output signal of the overcurrent protection output module;
the overcurrent protection output module comprises an optical coupler isolator U2 and a resistor R1, the resistor R1 is connected between a pin 1 of the optical coupler isolator U2 and a power supply, a pin 2 of the optical coupler isolator U2 is connected with the output end of the drive control module, a pin 3 of the optical coupler isolator U2 is grounded, and a pin 4 of the optical coupler isolator U2 is connected with an I/O end of the MCU processor;
the filtering module comprises a polarity capacitor C1, and the polarity capacitor C1 is connected in parallel between a power supply and the ground;
the IGBT overcurrent detection module is used for detecting the voltage between the C pole and the E pole of the IGBT, and the output end of the IGBT overcurrent detection module is connected with the input end of the drive control module;
the driving control module is used for controlling the IGBT to be turned off slowly and comprises a driving control chip U1.
2. The circuit for IGBT over-current detection and protection according to claim 1, the IGBT overcurrent detection module comprises a threshold comparator U3, a diode D2, a diode D5, a resistor R5, a resistor R6, a resistor R7 and a resistor R8, one end of the resistor R8 is connected in parallel with one end of the resistor R6 and one end of the resistor R7, the other end of the resistor R8 is connected with a power supply, the other end of the resistor R6 is connected with the non-inverting input end of the threshold comparator U3 and the anode of the diode D5 in parallel, the other end of the resistor R7 is grounded, the cathode of the diode D5 is connected with the C pole of the IGBT, the resistor R5 is connected in parallel between the output end of the threshold comparator U3 and a power supply pin, the output end of the threshold comparator U3 is connected with the cathode of the diode D2, and the anode of the diode D2 is connected with the pin 6 of the drive control chip U1.
3. The circuit of claim 2, wherein the resistor R7 is a sliding resistor, and a sliding arm of the resistor R7 is connected to an inverting input terminal of the threshold comparator U3.
4. The circuit for detecting and protecting the overcurrent of the IGBT according to claim 1, wherein the driving control module further comprises a resistor R4, a diode D1, a capacitor C2, a zener diode D3 and a zener diode D4, a pin 3 of the driving control chip U1 is connected in parallel with a cathode of the zener diode D3 and a G electrode of the IGBT through the resistor R4, an anode of the zener diode D3 is connected with an anode of the zener diode D4, a cathode of the zener diode D4, an anode of the capacitor C2, a cathode of the diode D1 and a pin 1 of the driving control chip U1 are connected in parallel with an E electrode of the IGBT, and an anode of the diode D1 and a cathode of the capacitor C2 are connected in parallel with a pin 9 of the driving control chip U1 and then grounded.
5. The circuit of claim 4, wherein the capacitor C2 is a polar capacitor.
6. The circuit for detecting and protecting the overcurrent of the IGBT as recited in claim 1, wherein a pin 2 of the optocoupler isolator U2 is connected with a pin 5 of the drive control chip U1.
7. The circuit for detecting and protecting the overcurrent of the IGBT as recited in claim 1, wherein a pin 14 of the drive control chip U1 is connected with a pulse output port of the MCU processor through a resistor R2.
8. The circuit for detecting and protecting the overcurrent of the IGBT as recited in claim 1, wherein the drive control chip U1 is of type EXB 841.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022085349.3U CN213342174U (en) | 2020-09-22 | 2020-09-22 | Circuit for overcurrent detection and protection of IGBT |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022085349.3U CN213342174U (en) | 2020-09-22 | 2020-09-22 | Circuit for overcurrent detection and protection of IGBT |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN213342174U true CN213342174U (en) | 2021-06-01 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202022085349.3U Active CN213342174U (en) | 2020-09-22 | 2020-09-22 | Circuit for overcurrent detection and protection of IGBT |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN213342174U (en) |
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2020
- 2020-09-22 CN CN202022085349.3U patent/CN213342174U/en active Active
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