CN213124693U - Miniaturized ridge waveguide 5G dual-frequency band-pass filter - Google Patents
Miniaturized ridge waveguide 5G dual-frequency band-pass filter Download PDFInfo
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- CN213124693U CN213124693U CN202021004014.8U CN202021004014U CN213124693U CN 213124693 U CN213124693 U CN 213124693U CN 202021004014 U CN202021004014 U CN 202021004014U CN 213124693 U CN213124693 U CN 213124693U
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Abstract
The utility model discloses a miniaturized ridge waveguide 5G dual-frenquency band-pass filter. The utility model comprises three groups of non-contact ridge waveguides arranged in a metal cavity and two transverse ridge waveguides used for high and low frequency zero point control; two transverse ridge waveguides used for zero point control are externally connected in an input channel, one transverse ridge waveguide is connected with a first group of ridge waveguides used for controlling high frequency through a first longitudinal ridge waveguide to generate a high frequency zero point, and the other transverse ridge waveguide is coupled with other structures through a gap to generate a low frequency zero point. The ridge structure is adopted to complete the transmission and the coupling of signals, the miniaturization of the dual-frequency filter is realized, and the ridge waveguide has a relatively wide spurious-free working frequency window to allow the realization of broadband filtering, so the filter completes the low-insertion-loss dual-passband filtering of 2.515GHz-2.675GHz and 3.6GHz-3.8 GHz.
Description
Technical Field
The utility model belongs to the technical field of the microwave device, especially, relate to the dual-frenquency wave filter who utilizes ridge waveguide and zero control groove design.
Background
With the rapid development of wireless communication technology towards high speed, broadband and large capacity trends, such as the emerging 5G technology, the demand for dual-band and even multi-band filters is increasing. The existing cross-coupling filter introduces a limited transmission zero point by using cross coupling, the performance can also meet the requirement, but the independent control of the resonant frequency of each pass band is difficult to realize, and the zero point is influenced by the structure of the whole filter, so that the modular design and debugging can not be carried out, and the inconvenience is brought to the engineering. Although the substrate integrated waveguide filter has small volume and low cost, and the frequency band can also meet the requirements, the insertion loss is higher. At present, the zero point of the single-frequency filter can be realized by adopting methods such as cross coupling, suppression resonators and non-resonant nodes of CT and CQ topological structures, but the double-frequency filter does not have a related technology to improve the out-of-band suppression performance.
Disclosure of Invention
The utility model aims to solve the problem that the prior double-frequency filter cannot realize the controllable zero point, and does not have 2.515GHz-2.675GHz and 3.6GHz-3.8GHz dual-band filter, and designs a novel miniaturized ridge waveguide 5G dual-band-pass filter. The filter has the advantages of small insertion loss, wide bandwidth of two pass bands, strong suppression on stray waves, controllable zero point and easy debugging.
The utility model adopts the technical scheme as follows:
a miniaturized ridge waveguide 5G dual-frequency band-pass filter comprises a metal cavity (1), an input structure (12), an output structure (13), three groups of non-contact ridge waveguides arranged in the metal cavity (1), a transverse ridge waveguide (5) used for controlling a high-frequency zero point and a transverse ridge waveguide (9) used for controlling a low-frequency zero point;
the first group of ridge waveguides comprises two first transverse ridge waveguides (2) which are arranged in parallel and are not in contact with each other, and a fourth transverse ridge waveguide (10) which is arranged between the two first transverse ridge waveguides (2) and is not in contact with the first transverse ridge waveguides (2); one of the first transverse ridge waveguides (2) is connected with a transverse ridge waveguide (5) for zero point control through a first longitudinal ridge waveguide (7); one end of the fourth transverse ridge waveguide (10) is in contact with the inner wall of the metal cavity (1); the fourth transverse ridge waveguide (10) is as high as the metal cavity (1);
in order to introduce high-frequency zero points, a transverse ridge waveguide (5) for zero point control is externally connected to an input channel, and is connected with a first group of ridge waveguides for controlling high frequency through a first longitudinal ridge waveguide (7); the height of the first longitudinal ridge waveguide (7) is the same as that of the first group of ridge waveguides, when the first longitudinal ridge waveguide is located at a specific position, the first longitudinal ridge waveguide does not affect the low frequency, the coupling is enhanced, the amplitude of the first longitudinal ridge waveguide at a specific frequency point of a high frequency band is enabled to be zero, and therefore a zero point control groove is formed. Zero point movement is performed by adjusting the dimensional position of the lateral ridge waveguide (5).
The second group of ridge waveguides comprises two second transverse ridge waveguides (3) which are arranged in parallel and are not in contact with each other and a second longitudinal ridge waveguide (6) used for connecting the two second transverse ridge waveguides (3);
the third group of ridge waveguides comprises two third transverse ridge waveguides (4) which are arranged in parallel and are not in contact with each other and a third longitudinal ridge waveguide (8) used for connecting the two third transverse ridge waveguides (4);
the heights of the first group of ridge waveguides and the second group of ridge waveguides are mainly determined by a high-frequency band, and the height of the third group of ridge waveguides is mainly determined by a low-frequency band;
three ridge waveguide of group all are the symmetry form and distribute, form two passageways: one path completes low-frequency filtering, and the other path completes high-frequency filtering, so that the size of the filter is reduced.
A fifth transverse ridge waveguide (11) which is not in contact with the second and third sets of ridge waveguides is arranged between the second and third sets of ridge waveguides and is positioned on the same straight line with the fourth transverse ridge waveguide (10); the height of the fifth transversal ridge waveguide (11) is the same as the height of the fourth transversal ridge waveguide (10);
the height of the fifth transversal ridge waveguide (11) is the same as the height of the metal cavity (1) and is related to the insertion loss.
And the transverse ridge waveguide (9) for controlling the low-frequency zero point is not connected with the three groups of ridge waveguides, and gaps are reserved between the transverse ridge waveguide and the three groups of ridge waveguides. The ridge waveguide (9) is lower than the metal cavity (1) in height, and the height of the ridge waveguide is related to the position of a low-frequency zero point; zero point movement is performed by adjusting the dimensional position of the lateral ridge waveguide (9).
The input and output interfaces are completed by SMA interfaces, inner cores of the input interface (12) and the output interface (13) are respectively connected with the two first transverse ridge waveguides (2), and an outer core is connected with the metal cavity (1), so that energy loss is reduced.
A fourth transversal ridge waveguide (10) for enhanced coupling; the second longitudinal ridge waveguide (6) is used for reinforcing coupling, and the joint is subjected to chamfering treatment; the third longitudinal ridge waveguide (8) is used for reinforcing coupling, and the joint is chamfered.
The junction of the first longitudinal ridge waveguide (7) and the transverse ridge waveguide (5) for zero point control is chamfered.
The first transversal ridge waveguide (2) is slot-coupled to the second transversal ridge waveguide (3).
The fifth transversal ridge waveguide (11) is coupled to the third set of ridge waveguides by a slot of a certain wavelength length, thus constituting a first pass band. The third group of ridge waveguides and the metal cavity (1) are separated by a certain wavelength through a gap with a certain wavelength length to form a second passband.
The utility model has the advantages that: 1. the ridge structure is adopted to complete the transmission and the coupling of signals, the miniaturization of the dual-frequency filter is realized, and the ridge waveguide has a relatively wide spurious-free working frequency window to allow the realization of broadband filtering, so the filter completes the low-insertion-loss dual-passband filtering of 2.515GHz-2.675GHz and 3.6GHz-3.8 GHz. 2. And the design of two zero control slots is added, so that the out-of-band rejection performance is improved. 3. A plurality of ridge waveguides which are symmetrically distributed are built in the metal cavity, the whole cavity is divided into two paths, one path completes low-frequency filtering, the other path completes high-frequency filtering, and the size of the filter is reduced. 4. The dual-passband isolation of the dual-band filter is high, and meanwhile, the two passbands can be correspondingly changed by adjusting the related structures. 5. The utility model discloses a small, light in weight are convenient for make in batches.
Drawings
FIG. 1 is a schematic diagram of a filter structure;
FIG. 2 shows a filter S corresponding to that shown in FIG. 111A parameter test result;
FIG. 3 shows a filter S corresponding to that shown in FIG. 112A parameter test result;
in the figure, the metal cavity 1, the first transverse ridge waveguide 2, the second transverse ridge waveguide 3, the third transverse ridge waveguide 4, the transverse ridge waveguide 5 for controlling a high-frequency zero point, the second longitudinal ridge waveguide 6, the first longitudinal ridge waveguide 7, the third longitudinal ridge waveguide 8, the transverse ridge waveguide 9 for controlling a low-frequency zero point, the fourth transverse ridge waveguide 10, the fifth transverse ridge waveguide 11, the input structure 12, and the output structure 13 are shown.
Detailed Description
To more clearly illustrate the problems, technical solutions and advantages solved by the present invention, the following description is provided in conjunction with the drawings to illustrate the embodiments of the present invention, and the preferred embodiments described herein are only for illustrating and explaining the present invention and are not intended to limit the present invention. All should be within the scope of protection of the present invention.
As shown in fig. 1, in the miniaturized ridge waveguide 5G dual-band bandpass filter, a metal cavity 1 is made of aluminum material, the size of the cavity is optimized according to the integrated coupling coefficient, and ridge waveguides are symmetrically distributed in the cavity.
The first group of ridge waveguides comprises two first transverse ridge waveguides 2 which are arranged in parallel and do not contact with each other, and a fourth transverse ridge waveguide 10 which is arranged between the two first transverse ridge waveguides 2 and does not contact with the first transverse ridge waveguides 2; one of the first transverse ridge waveguides 2 is connected with a transverse ridge waveguide 5 for high-frequency zero control through a first longitudinal ridge waveguide 7; one end of the fourth transversal ridge waveguide 10 is in contact with the inner wall of the metal cavity 1, thereby enhancing coupling. The fourth transverse ridge waveguide 10 has the same height as the metal cavity 1;
the first transversal ridge waveguide 2 is located a wavelength length from the fourth transversal ridge waveguide 10.
In order to introduce a high-frequency zero point, a transverse ridge waveguide 5 for high-frequency zero point control is externally connected to an input channel and is connected with a first group of ridge waveguides for controlling high frequency through a first longitudinal ridge waveguide 7; the height of the first longitudinal ridge waveguide 7 is the same as that of the first group of ridge waveguides, when the first longitudinal ridge waveguide is located at a specific position, the first longitudinal ridge waveguide does not affect the low frequency, the coupling is enhanced, the amplitude of the first longitudinal ridge waveguide at a specific frequency point of a high frequency band is enabled to be zero, and therefore a zero point control groove is formed. At the same time, a ridge waveguide 9 for controlling the low-frequency zero is added below, which is coupled to other structures via a slot.
The second group of ridge waveguides comprises two second transverse ridge waveguides 3 which are arranged in parallel and are not in contact with each other, and a second longitudinal ridge waveguide 6 for connecting the two second transverse ridge waveguides 3;
the third group of ridge waveguides comprises two third transverse ridge waveguides 4 which are arranged in parallel and are not in contact with each other, and a third longitudinal ridge waveguide 8 for connecting the two third transverse ridge waveguides 4;
the heights of the first group of ridge waveguides and the second group of ridge waveguides are mainly determined by a high-frequency band, and the height of the third group of ridge waveguides is mainly determined by a low-frequency band;
three ridge waveguide of group all are the symmetry form and distribute, form two passageways: one path completes low-frequency filtering, and the other path completes high-frequency filtering, so that the size of the filter is reduced.
A fifth transversal ridge waveguide 11 centered on the symmetry axis of the three sets of ridge waveguides and between the second and third sets of ridge waveguides; the fifth transversal ridge waveguide 11 has the same height as the metal cavity 1.
The height of the fifth transversal ridge waveguide 11 is related to the insertion loss.
The input and output interfaces are completed by SMA interfaces, inner cores of the input interface 12 and the output interface 13 are respectively connected with the two first transverse ridge waveguides 2, and outer cores are connected with the metal cavity 1, so that energy loss is reduced.
The fourth transversal ridge waveguide 10 is used for enhanced coupling; the second longitudinal ridge waveguide 6 is lower than the second transverse ridge waveguide 3 in height and used for enhancing coupling, and chamfering processing is adopted at the joint; the third longitudinal ridge waveguide 8 is used for reinforcing coupling, and the joint is chamfered.
The junction of the first longitudinal ridge waveguide 7 and the transverse ridge waveguide 5 for controlling the high frequency zero point is chamfered.
The first transversal ridge waveguide 2 is slot-coupled to the second transversal ridge waveguide 3.
The fifth transversal ridge waveguide 11 is coupled to the third set of ridge waveguides by a slot of a certain wavelength length, thus constituting a first pass band. The third group of ridge waveguides are coupled with the metal cavity 1 through a gap with a certain wavelength length, so that a second pass band is formed.
As shown in FIG. 2, the measured S11 parameter of the filter of this embodiment is in the frequency ranges of 2.515-2.675GHz and 3.6-3.8GHz, which indicates that the present invention has a wider dual band.
As shown in fig. 3, the actually measured S12 parameter of the filter of the present embodiment has an insertion loss of less than 1dB in the frequency band, and has two zeros outside the band, so that the suppression performance is good.
The above-mentioned embodiment is not to the utility model discloses a restriction, the utility model discloses not only be limited to above-mentioned embodiment, as long as accord with the utility model discloses the requirement all belongs to the protection scope of the utility model.
Claims (9)
1. The miniaturized ridge waveguide 5G dual-frequency band-pass filter is characterized by comprising a metal cavity (1), an input structure (12), an output structure (13), three groups of non-contact ridge waveguides arranged in the metal cavity (1), a transverse ridge waveguide (5) used for controlling a high-frequency zero point and a transverse ridge waveguide (9) used for controlling a low-frequency zero point;
the first group of ridge waveguides is connected with the input structure (12) and the output structure (13);
the first group of ridge waveguides are connected with a transverse ridge waveguide (5) for controlling a high-frequency zero through a first longitudinal ridge waveguide (7);
the transverse ridge waveguide (9) for controlling the low-frequency zero point is not connected with the three groups of ridge waveguides and is coupled with other structures through gaps;
the first transverse ridge waveguide (2) and the second transverse ridge waveguide (3) are coupled through a gap, and a fifth transverse ridge waveguide (11) is arranged between the second group of ridge waveguides and the third group of ridge waveguides; the fifth transverse ridge waveguide (11) is coupled with the third group of ridge waveguides through a gap with a certain wavelength length, so that a first pass band is formed; and the third group of ridge waveguides are coupled with the metal cavity (1) through a gap with a certain wavelength length, so that a second pass band is formed.
2. A miniaturized ridge waveguide 5G dual band bandpass filter according to claim 1, characterized in that the first longitudinal ridge waveguide (7) has the same height as the first set of ridge waveguides.
3. A miniaturized ridge waveguide 5G dual-band bandpass filter according to claim 1, characterized in that the first set of ridge waveguides comprises two first transversal ridge waveguides (2) arranged in parallel and not in contact, and a fourth transversal ridge waveguide (10) arranged between the two first transversal ridge waveguides (2) and not in contact with the first transversal ridge waveguides (2); one of the first transversal ridge waveguides (2) is connected to a transversal ridge waveguide (5) for controlling the high frequency zero point via a first longitudinal ridge waveguide (7).
4. A miniaturized ridge waveguide 5G dual-band bandpass filter according to claim 3, characterized in that one end of the fourth transversal ridge waveguide (10) is in contact with the inner wall of the metal cavity (1).
5. A miniaturized ridge waveguide 5G dual-band bandpass filter according to claim 1 or 2, characterized in that the second set of ridge waveguides comprises two second transversal ridge waveguides (3) arranged in parallel and not in contact, and a second longitudinal ridge waveguide (6) for connecting the two second transversal ridge waveguides (3);
the third group of ridge waveguides comprises two third transverse ridge waveguides (4) which are arranged in parallel and are not in contact with each other, and a third longitudinal ridge waveguide (8) used for connecting the two third transverse ridge waveguides (4).
6. The miniaturized ridge waveguide 5G dual band pass filter of claim 1, wherein the heights of the first and second sets of ridge waveguides are determined primarily by the high frequency band and the heights of the third set of ridge waveguides are determined primarily by the low frequency band.
7. A miniaturized ridge waveguide 5G dual-band bandpass filter according to claim 3, characterized in that the height of the fifth transversal ridge waveguide (11) is related to the insertion loss.
8. The miniaturized ridge waveguide 5G dual-band bandpass filter according to claim 1, characterized in that the fourth transversal ridge waveguide (10) is at the same height as the metal cavity (1).
9. A miniaturized ridge waveguide 5G dual band bandpass filter according to claim 1, characterized in that the transversal ridge waveguide (9) for controlling the low frequency zero has a lower height than the metal cavity (1), which height is related to the low frequency zero position.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202021004014.8U CN213124693U (en) | 2020-06-04 | 2020-06-04 | Miniaturized ridge waveguide 5G dual-frequency band-pass filter |
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| CN202021004014.8U CN213124693U (en) | 2020-06-04 | 2020-06-04 | Miniaturized ridge waveguide 5G dual-frequency band-pass filter |
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