CN212991273U - Passive asymmetric dual-port network - Google Patents
Passive asymmetric dual-port network Download PDFInfo
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- CN212991273U CN212991273U CN202021843227.XU CN202021843227U CN212991273U CN 212991273 U CN212991273 U CN 212991273U CN 202021843227 U CN202021843227 U CN 202021843227U CN 212991273 U CN212991273 U CN 212991273U
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Abstract
The invention discloses a passive asymmetric dual-port network which is characterized by comprising a first port, a resistor, two sections of transmission lines with specific lengths and a second port, wherein the transmission lines with specific lengths are controlled by impedance, the input of the first port is divided into two paths, the first path of transmission line is connected with the resistor in series and then is connected with the first section of transmission line with specific lengths, the first section of transmission line with specific lengths is finally combined with the second path of transmission line and output to the second port, and the second path of transmission line is the second section of transmission line with specific lengths. The dual-port network realizes the stroke directivity of the device in the actual use scene, thereby protecting the input port and simultaneously meeting the requirements of miniaturization and high and low temperature resistance of the device.
Description
Technical Field
The invention relates to the field of radio frequency microwave, in particular to a passive asymmetric dual-port network.
Background
With the development of microwave technology, people put higher and higher requirements on the performance of microwave devices, and not only are the requirements for the stroke directionality of the devices in practical use scenes so as to protect input ports, but also the requirements for miniaturization and high and low temperature resistance of the devices are met. The traditional passive device is difficult to realize the differentiation of S11 and S22 of a dual-port network, the stroke directivity of the device is ensured to protect an input port, generally, the device can be realized only through a circulator, but the circulator belongs to a ferrite device, the structure is complex, the high-temperature resistance is poor, and the device volume is large.
Disclosure of Invention
In order to break through the problem that the traditional passive device is difficult to realize the differentiation of S11 and S22 of a dual-port network and ensure the limitation of the stroke directivity of the device to protect an input port, the invention aims to provide a passive asymmetric dual-port network, which comprises a first port, a resistor, two sections of transmission lines with specific lengths and a second port, wherein the transmission lines with specific lengths are input from the first port and then divided into two paths, the first path of transmission line is firstly connected with the resistor in series and then connected with the first section of transmission line with specific lengths, the first section of transmission line is finally combined with the second path of transmission line to be output to the second port, and the second path of transmission line is the second section of transmission line with specific.
Specifically, the transmission line after input from the first port is divided into two paths through the T-shaped transmission line, and the first transmission line with a specific length is finally combined with the second transmission line and output to the second port through the T-shaped transmission line.
Further, the resistance value of the resistor is designed to be a value for blocking 50% +/-5% of microwaves from passing through.
Further, the first section of transmission line with specific length is a quarter of the center wavelength of the working frequency band, and the second section of transmission line with specific length is a quarter of the center wavelength of the working frequency band.
The characteristic impedance of two sections of transmission line of a specific length is 50 ohm + -10 ohm.
Furthermore, the network is a planar structure, and the first port, the resistor, the two sections of transmission lines with specific lengths controlled by impedance and the second port are all arranged on the same plane.
Specifically, the two sections of transmission lines with specific lengths controlled by the impedance are microstrip lines, the microstrip lines are made of copper materials, and the bottom plate parts of the microstrip lines are made of medium FR-4 grade materials of a PCB (printed Circuit Board).
Further, the resistance value is set to be twice the characteristic impedance of two sections of transmission lines of a certain length, specifically, to be 100 ohms ± 10 ohms.
Furthermore, the adaptive range of the microstrip line and the resistor to the temperature is 60-150 ℃ below zero.
Further, the network is used at 4-6 GHZ.
The dual-port network adopts a method of adding two sections of transmission lines by a resistor, and properly controls the resistance value of the resistor and the impedance of two sections of microstrip lines to realize the differentiation of S11 and S22 of the passive dual-port network, so that one port of the dual-port network realizes high matching and the other port realizes high reflection, and in addition, the flexible adjustment of S11 and S22 can be realized by adjusting the resistance value of the resistor and the characteristic impedance of the two sections of microstrip lines. Because the realization mode is the resistor and the transmission line, the temperature stability is good, the realization method is simple, the cost is low and the reliability is high.
The microstrip and the resistor have consistency in a large temperature range, the temperature range is 60-150 ℃ below zero, and the microstrip and the resistor can be realized in a small volume as a planar structure.
Therefore, the dual-port network realizes the stroke directivity of the device in the actual use scene, thereby protecting the input port and simultaneously meeting the requirements of miniaturization and high and low temperature resistance of the device.
The invention is a low-cost and high-reliability method, which enables one port of a dual-port network to realize high matching and the other port to realize high reflection, and the difference between S11 and S22 reaches 10 dB.
Drawings
FIG. 1 is a schematic diagram of a two-port network implementation of the present invention;
fig. 2 is a schematic diagram of a dual-port network in which the transmission line is a microstrip line according to the embodiment of the present invention.
In the figure, 1-a first port, 2-a transmission line, 3-a T-type transmission line, 4-a resistor, 5-a first section of transmission line with specific length, 6-a second section of transmission line with specific length, and 7-a second port.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, embodiments of the present invention are further described below with reference to the accompanying drawings and examples. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not to be construed as limiting the invention.
Fig. 1 is a schematic diagram of an implementation principle of a dual-port network according to the present invention, and the present invention provides a passive asymmetric dual-port network, including a first port, a resistor, two specific-length transmission lines with impedance control, and a second port, where the transmission line is divided into two paths through a T-type transmission line after input from the first port, where the first path of transmission line is connected in series with the resistor, and then connected to the first specific-length transmission line, the first specific-length transmission line is finally combined with the second path of transmission line, and output to the second port through the T-type transmission line, and the second path of transmission line is a second specific-length transmission line.
The resistance value of the resistor is designed to be a value for blocking 50% +/-5% of microwaves from passing through.
The first section of transmission line with specific length is a quarter of the central wavelength of the working frequency band, and the second section of transmission line with specific length is a quarter of the central wavelength of the working frequency band.
The network is of a planar structure, and the first port, the resistor, the two transmission lines with specific length controlled by impedance and the second port are all arranged on the same plane.
The two sections of transmission lines with specific lengths controlled by the impedance are microstrip lines, the microstrip lines are made of copper materials, and the bottom plate parts of the microstrip lines are made of medium FR-4 grade materials of a PCB (printed Circuit Board).
The adaptive range of the microstrip line and the resistor to the temperature is 60-150 ℃ below zero.
The network is used at 4GHZ-6 GHZ.
Fig. 2 is a schematic diagram of a dual-port network in which a transmission line is a microstrip line according to an embodiment of the present invention, which provides an implementation manner on a microstrip line, where the dual-port network includes two sections of microstrip lines with a length of about one quarter of a central wavelength of a working frequency band, and a trace length of the microstrip line is divided into two paths after being input from a first port, and one path is connected to the first section of microstrip line after passing through a resistor, and then is combined with the other section of microstrip line before a second port. The microstrip line of this embodiment is made of a copper strip, wherein the bottom plate portion in fig. 2 is a dielectric portion of a PCB, the dielectric is a laminated product formed by using alkali-free glass fiber cloth as a base material and epoxy resin as an adhesive through hot pressing, the trace portion is a microstrip line, and a resistor is welded in series at a position where two sections of the microstrip line are separated. As the microstrip and the resistor have consistency in a large temperature range, the adaptive range of the microstrip and the resistor to the temperature is 60-150 ℃ below zero. At the same time, as a planar structure, it can be realized in a very small volume.
Because the length of the two microstrip lines is about a quarter wavelength of the central frequency of the working frequency band, the working frequency band is 4GHZ-6GHZ in the embodiment, the signal is divided into two paths when entering from the first port, and the two paths of signals have a phase difference of 180 degrees and are mutually offset when entering from the two ends of the resistor, so that the matching characteristic is good, and the matching characteristic can specifically reach a standing-wave ratio within 1.3; when a signal enters from the second port, the phases of the two paths of signals at the two ends of the resistor are the same, reflection is formed, and therefore high reflection characteristics are formed, specific data of S11 are related to parameters such as a synthesized microstrip line, and S11 can reach about 1 dB; therefore, the difference between S11 and S22 is realized by using a passive dual-port network, and the difference between S11 and S22 reaches 10dB at most. In principle, two microstrip lines and a resistor form an integral dual-port network to jointly function, the whole dual-port network structure is left-right asymmetric through the resistor, the resistor is 100 ohms, fine tuning is finally carried out according to the integral condition, the resistor passes through part of microwaves, and the microwaves of about half percent pass through the resistor in the embodiment; specifically, the characteristic impedance of the first section of the transmission line of a certain length is 57 ohms, and the characteristic impedance of the second section of the transmission line of a certain length is 48 ohms. Solving the solution of the homogeneous wave equation of the electromagnetic field under the boundary condition of the model shown in fig. 2 by using a finite element method, and converting the solution into S11 and S22 according to the numerical solution of the field, so as to optimize the length, the characteristic impedance, the resistance value and the like of the two microstrip lines, and finally realizing the differentiation of S11 and S22 by using a passive dual-port network; the boundary conditions of the model shown in fig. 2 are specifically as follows: the surface of the microstrip line and the bottom surface of the PCB are set to be an ideal electric boundary, the medium is set to be FR-4, the dielectric constant is 4.6, the upper part of the PCB is set to be air, the dielectric constant is 1, and meanwhile, other surfaces are set to be an ideal radiation boundary condition.
Claims (10)
1. A passive asymmetric dual-port network is characterized by comprising a first port, a resistor, two sections of transmission lines with specific lengths and a second port, wherein the transmission lines are controlled by impedance and divided into two paths after being input from the first port, the first path of transmission line is connected with the resistor in series and then connected with the first section of transmission line with specific lengths, the first section of transmission line with specific lengths is finally combined with the second path of transmission line and output to the second port, and the second path of transmission line is the second section of transmission line with specific lengths.
2. The passive asymmetric dual-port network as claimed in claim 1, wherein the transmission line after input at the first port is divided into two paths via a T-shaped transmission line, and the first specific length transmission line is finally combined with the second path transmission line and output to the second port via the T-shaped transmission line.
3. A passive asymmetric two-port network according to claim 2, wherein the resistors are sized to block 50% ± 5% of microwaves.
4. A passive asymmetric two-port network as in claim 3 wherein said first length specific transmission line is a quarter of the operating band center wavelength and said second length specific transmission line is a quarter of the operating band center wavelength.
5. A passive asymmetric two-port network according to claim 4, wherein said network is a planar structure, and said first port, a resistor, two sections of transmission line of specified length controlled by impedance, and said second port are all disposed on the same plane.
6. The asymmetric passive dual-port network as claimed in claim 5, wherein the two sections of transmission lines with specific lengths controlled by the impedance are microstrip lines, the microstrip lines are made of copper, and the bottom plate of the microstrip lines is made of FR-4 grade dielectric material of PCB.
7. A passive asymmetric two-port network according to claim 6, wherein the characteristic impedance of the two sections of transmission line of specified length is 50 ohms ± 10 ohms.
8. A passive asymmetric two-port network according to claim 7, wherein the resistance of the resistor is set to twice the characteristic impedance of two sections of transmission line of a given length, 100 ohms ± 10 ohms.
9. The asymmetric passive two-port network as claimed in claim 8, wherein the microstrip line and the resistor are adapted to a temperature range of 60-150 degrees celsius below zero.
10. The passive asymmetric two-port network as in claim 8, wherein said network is used at specific frequency band 4GHZ-6 GHZ.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202021843227.XU CN212991273U (en) | 2020-08-28 | 2020-08-28 | Passive asymmetric dual-port network |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202021843227.XU CN212991273U (en) | 2020-08-28 | 2020-08-28 | Passive asymmetric dual-port network |
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| CN212991273U true CN212991273U (en) | 2021-04-16 |
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| CN202021843227.XU Active CN212991273U (en) | 2020-08-28 | 2020-08-28 | Passive asymmetric dual-port network |
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