CN212934663U

CN212934663U - Ferromagnetic memory resisting magnetic field interference

Info

Publication number: CN212934663U
Application number: CN202022285693.7U
Authority: CN
Inventors: 李洪伟
Original assignee: Zunyi Normal University
Current assignee: Zunyi Normal University
Priority date: 2020-10-14
Filing date: 2020-10-14
Publication date: 2021-04-09
Anticipated expiration: 2030-10-14

Abstract

The utility model belongs to the technical field of the anti-interference technique of storage and specifically relates to a ferromagnetic memory of anti magnetic field interference, through first MOF material layer, second MOF material layer, according to sandwich structure design between the tunnel knot, again with first conductive paint layer, the ferromagnetic layer, first MOF material layer, the second MOF material layer, the tunnel knot, the second conductive paint layer adopts sandwich structure design, the formation of exchange biasing field in the magnetic memory has been ensured, optimize magnetic field upset effect, and simultaneously, utilize first conductive paint layer, second conductive paint layer sandwich forms sandwich structure, avoided the influence of external magnetic field to the inside magnetic field of magnetic memory, the stability and the reliability of magnetic memory data access have been ensured.

Description

Ferromagnetic memory resisting magnetic field interference

Technical Field

The utility model belongs to the technical field of the anti-interference technique of storage and specifically relates to an anti-magnetic field interference's ferromagnetism memory.

Background

Magnetic memories include magnetic storage elements that include two ferromagnetic plates or electrodes that can hold a magnetic field and are separated by a non-magnetic material, such as a non-magnetic metal or insulator, that is, a Magnetic Tunnel Junction (MTJ). With the continuous development of new materials and new technologies, new memories are developed toward high-density nonvolatile memories. The resistive random access memory realizes data storage through reversible conversion of resistance of certain thin film materials under the action of electric excitation, and has the obvious advantages of simple device structure, small unit size, low power consumption, compatibility with a complementary metal oxide process, easy integration and the like compared with the traditional flash memory.

At present, in the application process of a magnetic memory in the prior art, the internal magnetic field of the magnetic memory is easily interfered by external electromagnetism and magnetic fields, so that the storage stability is poor; based on this, research on the development of electromagnetic interference shielding resistance of memories has been developed, such as: the resistive random access memory with the anti-electromagnetic interference function of patent number 201610965731.9 and the preparation method thereof adopt a sandwich structure and are composed of three layers of films, including a bottom electrode layer, a resistive functional layer and a top electrode layer, wherein the bottom electrode layer and the top electrode layer are made of an electromagnetic shielding material Ti₃C₂The resistance change functional layer is made of oxide material, and Ti which is conductive, high-efficiency in shielding electromagnetism, low in cost and easy to obtain is selected₃C₂The ene film is used as an electrode material, and the prepared group change memory has the advantages of light weight, high strength and simple process, and meets the requirements of portable and wearable electronic devices. For another example: the anti-electromagnetic interference black phosphorus alkenyl resistive random access memory with the patent application number of 201710076169.9 and the preparation method thereof comprise a substrate from bottom to top and Ti₃C₂ene film bottom electrode layer, black phosphorus alkene film resistance change functional layer and Ti₃C₂An ene thin film top electrode layer and a cladding layer. However, the research technology for the anti-magnetic field interference of the ferromagnetic memory is relatively weak, and the anti-magnetic field interference structural layer is not designed reasonably, so that the anti-magnetic field interference effect is not ideal.

SUMMERY OF THE UTILITY MODEL

In order to solve the above technical problem existing in the prior art, the utility model provides a ferromagnetic memory of anti magnetic field interference.

The method is realized by the following technical scheme:

the ferromagnetic memory resisting magnetic field interference comprises a substrate layer, a buffer layer arranged on the surface of the substrate layer, a first conductive paint layer arranged on the buffer layer, a ferromagnetic layer arranged on the first conductive paint layer, a first MOF material layer and a second MOF material layer arranged on the ferromagnetic layer, wherein a tunnel junction is arranged between the first MOF material layer and the second MOF material layer; establish second conductive paint layer on the second MOF material layer, establish thermal stability layer on the second conductive paint layer establishes the top electrode layer on the thermal stability layer.

Through the design of the first MOF material layer, the second MOF material layer and the tunnel junction according to a sandwich structure, the first conductive paint layer, the ferromagnetic layer, the first MOF material layer, the second MOF material layer, the tunnel junction and the second conductive paint layer adopt the sandwich structure design, the formation of an exchange bias field in the magnetic memory is ensured, the magnetic field overturning effect is optimized, meanwhile, the sandwich structure is formed by utilizing the first conductive paint layer and the second conductive paint layer, the influence of an external magnetic field on the magnetic field inside the magnetic memory is avoided, and the stability and the reliability of data access of the magnetic memory are ensured. Preferably, the tunnel junction comprises a first antiferromagnetic layer attached to the first MOF material layer, a second antiferromagnetic layer attached to the second MOF material layer, and a barrier layer disposed between the first antiferromagnetic layer and the second antiferromagnetic layer, and is made of MgO material. More preferably, the thickness of the first MOF material layer and the second MOF material layer is 5-10 nm.

The invention fully utilizes the exchange bias field forming effect of the MOF material, and is beneficial to enhancing the stability and the reliability of data access of the magnetic memory.

In order to reduce the influence of the external environment on the memory storage performance, a covering layer is preferably arranged between the tunnel junction and the second conductive paint layer. More preferably, the covering layer is a Ta/W composite layer with the thickness of 0.5nm-10nm, and the Ta/W composite layer is formed by alternately compounding Ta and W.

In order to enhance the conductive performance of the conductive layer, the first conductive paint layer and the second conductive paint layer are preferably prepared by a physical deposition method by using metal (Cu and/or Ni) conductive paint, and the thickness of the first conductive paint layer and the second conductive paint layer is 0.5-10 nm. More preferably, the conductive paint in the first conductive paint layer and the second conductive paint layer is prepared by adding Cu powder and Ni powder to a resin material, for example: https:// baike. sogou. com/v7878575.htm and corresponding material properties. More preferably, the thermally stable layer is a CoFeB layer with perpendicular anisotropy. More preferably, the buffer layer material is Cu; the ferromagnetic layers are alternating layers of Co/Ni.

In order to enhance the conductivity and improve the electromagnetic shielding effect and weaken the external electromagnetic wave after multiple internal reflections, the top electrode layer is preferably made of an electromagnetic shielding material Ti₃C₂An ene film layer.

Compared with the prior art, the invention has the technical effects that:

the utility model adopts the design of multilayer sandwich structure, a tunnel junction structure is formed inside, and then a second layer sandwich structure is formed by taking the tunnel junction as a sandwich, so that the formation of the exchange bias phenomenon in the magnetic memory is enhanced, and the data access accuracy, stability and reliability of the magnetic memory are improved; meanwhile, the outermost sandwich structure is formed by the first conductive paint layer, the ferromagnetic layer, the first MOF material layer, the second MOF material layer, the tunnel junction and the second conductive paint layer, so that under the action of the first conductive paint layer and the second conductive paint layer, the anti-magnetic field interference capability is enhanced, the influence of an external magnetic field on an internal exchange bias field component is prevented, the overall stability and the reliability of stored data are improved, and the conductivity is ensured.

Drawings

Fig. 1 is a schematic view of the overall structure of the present invention.

1-substrate layer 2-buffer layer 3-first layer of conductive lacquer 4-ferromagnetic layer 5-first layer of MOF material 6-first layer of antiferromagnetic ferromagnetic 7-barrier layer 8-second layer of antiferromagnetic ferromagnetic 9-cover layer 10-second layer of MOF material 11-second layer of conductive lacquer 12-thermally stable layer 13-top electrode layer.

Detailed Description

The technical solution of the present invention is further defined below with reference to the specific embodiments, but the scope of protection is not limited to the description.

Other detailed descriptions of the present invention can be fully obtained by those skilled in the art according to the common general knowledge or the conventional technical means, and the technical means disclosed in the prior art, for example: for the preparation method between the layers, reference is made to the physical deposition method.

Example 1

As shown in fig. 1, in this embodiment, the ferromagnetic memory resisting magnetic field interference includes a substrate layer 1, a flexible substrate made of PVDF or other materials, and having a thickness of about 20 nm; the buffer layer 2 is arranged on the surface of the substrate layer 1, the buffer layer 2 is prepared by metal Cu on the substrate layer through a physical deposition method, and the thickness is 10 nm; the first conductive paint layer 3 is arranged on the buffer layer 2, and the adopted first conductive paint layer 3 is formed by coating metal conductive paint on the buffer layer 2 by utilizing a physical deposition method and the like, wherein the metal conductive paint is prepared by adding Cu powder and Ni powder into a polyvinyl chloride resin material according to the prior art and common general knowledge well known by technical personnel in the corresponding field, and the thickness of the metal conductive paint is 10 nm; a ferromagnetic layer 4 provided on said first conductive lacquer layer 3, the ferromagnetic layer 4 being an alternating multilayer of Co/Ni, the total thickness being about 8nm, the Ni layer being one third; a first MOF material layer 5 having a thickness of about 10nm and a second MOF material layer 10 having a thickness of about 10nm provided on the ferromagnetic layer 4, and a tunnel junction provided between the first MOF material layer 5 and the second MOF material layer 10; a second conductive paint layer 11 arranged on the second MOF material layer 10, wherein the second conductive paint layer 11 is formed by coating a metal conductive paint on the second MOF material layer 10 by using a physical deposition method and the like, wherein the metal conductive paint is a copper conductive paint introduced in Baidu enchttps:// baike. A thermally stable layer 12 provided on said second layer of conductive lacquer 11, the thermally stable layer 12 having a perpendicular anisotropic CoFeB layer with a thickness of about 22 nm; a top electrode layer 13 with a thickness of 10nm arranged on the thermal stabilization layer 12, wherein the top electrode layer 13 is made of Ti as an electromagnetic shielding material₃C₂ene film layer. The tunnel junction comprises a first antiferromagnetic layer 6 proximate the first layer of MOF material 5, a second antiferromagnetic layer 8 proximate the second layer of MOF material 10, and a barrier layer 7 disposed between the first antiferromagnetic layer 6 and the second antiferromagnetic layer 8.

Example 2

As shown in fig. 1, in example 1, a capping layer 9 is disposed between the tunnel junction and the second conductive paint layer 11, the capping layer 9 is a Ta/W composite layer with a thickness of 0.5nm, and the Ta/W composite layer is formed by alternately compounding Ta and W.

Example 3

As shown in fig. 1, the top electrode layer 13 is W in example 1, and the other examples are the same as example 1.

Example 4

As shown in fig. 1, the first conductive paint layer 3 and the second conductive paint layer 11 are not provided on the basis of the embodiment 1, and the other steps are the same as the embodiment 1.

Example 5

As shown in fig. 1, the first conductive paint layer 3 is not provided on the basis of the embodiment 1, and the other steps are the same as the embodiment 1.

The switching ratio, operating voltage, operating current, data stability and magnetic field disturbance resistance of the ferromagnetic memory fabricated in the above examples 1-3 are measured as shown in table 1 below:

TABLE 1

It can be seen from table 1 that the utility model discloses ferromagnetic memory storage stability of anti magnetic field interference is good, and data access's voltage stability adopts sandwich structure preparation to form, does not receive external magnetic field interference.

The present invention is not limited to the prior art or the common general knowledge and the conventional technical means known to those skilled in the art, such as the selection of the buffer layer material, the selection of the ferromagnetic layer material, the control of the thickness, etc.

The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can substitute or change the technical solution and the inventive concept of the present invention within the technical scope of the present invention.

Claims

1. A ferromagnetic memory resistant to magnetic field interference, comprising a substrate layer (1), a buffer layer (2) provided on the surface of the substrate layer (1), a first conductive paint layer (3) provided on the buffer layer (2), a ferromagnetic layer (4) provided on the first conductive paint layer (3), a first MOF material layer (5) and a second MOF material layer (10) provided on the ferromagnetic layer (4), and a tunnel junction provided between the first MOF material layer (5) and the second MOF material layer (10); a second layer of conductive paint (11) provided on the second layer of MOF material (10), a thermally stable layer (12) provided on the second layer of conductive paint (11), a top electrode layer (13) provided on the thermally stable layer (12).

2. A ferromagnetic memory device resistant to magnetic field disturbances according to claim 1, characterized in that a capping layer (9) is provided between the tunnel junction and the second layer of conductive lacquer (11).

3. A ferromagnetic memory device as claimed in claim 2, wherein said capping layer (9) is a Ta/W composite layer with a thickness of 0.5nm-10nm, and said Ta/W composite layer is formed by alternately combining Ta and W.

4. A ferromagnetic memory as claimed in claim 1 or 2, characterized in that the tunnel junction comprises a first antiferromagnetic layer (6) against the first MOF material layer (5), a second antiferromagnetic layer (8) against the second MOF material layer (10), and a barrier layer (7) between the first antiferromagnetic layer (6) and the second antiferromagnetic layer (8).

5. Diamagnetic field according to claim 1The interfered ferromagnetic memory is characterized in that the top electrode layer (13) is made of an electromagnetic shielding material Ti₃C₂An ene film layer.

6. A ferromagnetic memory device resistant to magnetic field disturbances according to claim 1 wherein the thermally stable layer (12) is a CoFeB layer with perpendicular anisotropy.

7. A ferromagnetic memory device resistant to magnetic field disturbances according to claim 1, characterized in that the material of the buffer layer (2) is Cu; the ferromagnetic layer (4) is a Co/Ni alternating multilayer.

8. A ferromagnetic memory device as claimed in claim 1, wherein said first layer of MOF material (5) and said second layer of MOF material (10) are each 5-10nm thick.