CN212907738U - Electrostatic discharge transistor - Google Patents

Electrostatic discharge transistor Download PDF

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Publication number
CN212907738U
CN212907738U CN202021840624.1U CN202021840624U CN212907738U CN 212907738 U CN212907738 U CN 212907738U CN 202021840624 U CN202021840624 U CN 202021840624U CN 212907738 U CN212907738 U CN 212907738U
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China
Prior art keywords
layer
corrosion
electrostatic discharge
coating
discharge transistor
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CN202021840624.1U
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Chinese (zh)
Inventor
江叔勤
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Shenzhen Dongguang Jingpeng Electronic Co ltd
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Shenzhen Dongguang Jingpeng Electronic Co ltd
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Abstract

The utility model discloses an electrostatic discharge transistor, which comprises a body, the bottom of body is provided with participates in, the body includes inoxidizing coating and sandwich layer, the sandwich layer is located the internal surface of inoxidizing coating, the inoxidizing coating includes first anti-corrosion coating, second anti-corrosion coating, ageing resistance layer and insulating layer, first anti-corrosion coating is located the surface of second anti-corrosion coating, second anti-corrosion coating is located the surface on ageing resistance layer. The utility model discloses first anti-corrosion coating has good mechanical properties, heat resistance, wearability, chemical resistance and self-lubricity, increase the life of body, second anti-corrosion coating chemical stability can continue the protection when first anti-corrosion coating damages, further increase the life of body, the insulating layer can prevent the electric leakage, the ageing resistance layer can prevent that the insulating layer is ageing impaired, it is not good to have solved current electrostatic discharge transistor corrosion-resistant effect, lead to its shorter problem of accepting the life.

Description

Electrostatic discharge transistor
Technical Field
The utility model relates to a transistor technology field specifically is an electrostatic discharge transistor.
Background
The transistor is a solid semiconductor device (including diodes, triodes, field effect transistors, thyristors and the like, and sometimes particularly refers to a bipolar device), has multiple functions of detection, rectification, amplification, switching, voltage stabilization, signal modulation and the like, can be used as a variable current switch and can control output current based on input voltage, and belongs to one type of transistor.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide an electrostatic discharge transistor possesses corrosion-resistant effectual advantage, has solved current electrostatic discharge transistor corrosion-resistant effect not good, leads to its shorter problem of service life.
In order to achieve the above object, the utility model provides a following technical scheme: the utility model provides an electrostatic discharge transistor, includes the body, the bottom of body is provided with participates in, the body includes inoxidizing coating and sandwich layer, the sandwich layer is located the internal surface of inoxidizing coating, the inoxidizing coating includes first anti-corrosion layer, second anti-corrosion layer, ageing resistance layer and insulating layer, first anti-corrosion layer is located the surface of second anti-corrosion layer, second anti-corrosion layer is located the surface of ageing resistance layer, the ageing resistance layer is located the surface of insulating layer.
Preferably, the first corrosion prevention layer is a polyamide resin coating, and the second corrosion prevention layer is an epoxy resin coating.
Preferably, the anti-aging layer is a silica gel layer, and the insulating layer is a vulcanized rubber layer.
Preferably, the thickness of the first corrosion protection layer is 20 μm to 25 μm, and the thickness of the second corrosion protection layer is 25 μm to 30 μm.
Preferably, the aging resistant layer has a thickness of 40 to 45 μm, and the insulating layer has a thickness of 0.1 to 0.15 mm.
Compared with the prior art, the beneficial effects of the utility model are as follows:
the utility model discloses first anti-corrosion coating has good mechanical properties, heat resistance, wearability, chemical resistance and self-lubricity, increase the life of body, second anti-corrosion coating chemical stability can continue the protection when first anti-corrosion coating damages, further increase the life of body, the insulating layer can prevent the electric leakage, the ageing resistance layer can prevent that the insulating layer is ageing impaired, it is not good to have solved current electrostatic discharge transistor corrosion-resistant effect, lead to its shorter problem of accepting the life.
Drawings
FIG. 1 is a schematic structural view of the present invention;
FIG. 2 is a schematic sectional view of the body of the present invention in a top view;
fig. 3 is the schematic view of the cross-sectional enlarged structure of the protective layer under the overlooking state.
In the figure: 1. a body; 2. a pin; 3. a protective layer; 301. a first anti-corrosion layer; 302. a second anti-corrosion layer; 303. an anti-aging layer; 304. an insulating layer; 4. a core layer.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
In the description of the present invention, it should be noted that the terms "upper", "lower", "inner", "outer", "front end", "rear end", "both ends", "one end", "the other end", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplification of description, but do not indicate or imply that the device or element to be referred must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted", "provided", "connected", and the like are to be construed broadly, such as "connected", which may be fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present invention can be understood in specific cases to those skilled in the art.
The utility model discloses a body 1, participate in 2, inoxidizing coating 3, first anti-corrosion coating 301, second anti-corrosion coating 302, ageing resistance layer 303, insulating layer 304 and sandwich layer 4 part are the parts that general standard spare or technical field personnel know, and its structure and principle all can learn through the technical manual or learn through conventional experimental method for this technical field personnel.
Referring to fig. 1 to 3, an esd transistor includes a body 1, a pin 2 is disposed at the bottom of the body 1, the body 1 includes a protection layer 3 and a core layer 4, the core layer 4 is disposed on an inner surface of the protection layer 3, the protection layer 3 includes a first anti-corrosion layer 301, a second anti-corrosion layer 302, an anti-aging layer 303 and an insulating layer 304, the first anti-corrosion layer 301 is disposed on an outer surface of the second anti-corrosion layer 302, the second anti-corrosion layer 302 is disposed on an outer surface of the anti-aging layer 303, the anti-aging layer 303 is disposed on an outer surface of the insulating layer 304, the first anti-corrosion layer 301 is a polyamide resin coating, the second anti-corrosion layer 302 is an epoxy resin coating, the anti-aging layer 303 is a silica gel layer, the insulating layer 304 is a vulcanized rubber layer, the first anti-corrosion layer 301 has a thickness of 20 μm to 25 μm, the second anti-corrosion layer 302 has a thickness of 25 μm to 30 μm, the anti-aging layer, the thickness of the insulating layer 304 is 0.1mm-0.15mm, the first anti-corrosion layer 301 has good mechanical property, heat resistance, abrasion resistance, chemical resistance and self-lubrication, the service life of the body 1 is prolonged, the second anti-corrosion layer 302 is stable in chemical property, the first anti-corrosion layer 301 can continue to protect when damaged, the service life of the body 1 is further prolonged, the insulating layer 304 can prevent electricity leakage, the anti-aging layer 303 can prevent the insulating layer 304 from aging and damaging, and the problem that the service life of the existing electrostatic discharge transistor is short due to the fact that the existing electrostatic discharge transistor is poor in anti-corrosion effect is solved.
When the anti-corrosion structure is used, the first anti-corrosion layer 301 has good mechanical property, heat resistance, abrasion resistance, chemical resistance and self-lubrication, the service life of the body 1 is prolonged, the second anti-corrosion layer 302 is stable in chemical property, protection can be continued when the first anti-corrosion layer 301 is damaged, the service life of the body 1 is further prolonged, the insulating layer 304 can prevent electricity leakage, the anti-aging layer 303 can prevent the insulating layer 304 from being aged and damaged, and the problem that the service life of the existing electrostatic discharge transistor is short due to the fact that the existing electrostatic discharge transistor is poor in anti-corrosion effect is solved.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.

Claims (5)

1. An electrostatic discharge transistor comprising a body (1), characterized in that: the bottom of body (1) is provided with participates in (2), body (1) includes inoxidizing coating (3) and sandwich layer (4), sandwich layer (4) are located the internal surface of inoxidizing coating (3), inoxidizing coating (3) include first anti-corrosion layer (301), second anti-corrosion layer (302), ageing resistance layer (303) and insulating layer (304), first anti-corrosion layer (301) are located the surface of second anti-corrosion layer (302), second anti-corrosion layer (302) are located the surface of ageing resistance layer (303), ageing resistance layer (303) are located the surface of insulating layer (304).
2. An electrostatic discharge transistor according to claim 1, wherein: the first anti-corrosion layer (301) is a polyamide resin coating, and the second anti-corrosion layer (302) is an epoxy resin coating.
3. An electrostatic discharge transistor according to claim 1, wherein: the anti-aging layer (303) is a silica gel layer, and the insulating layer (304) is a vulcanized rubber layer.
4. An electrostatic discharge transistor according to claim 1, wherein: the first corrosion protection layer (301) has a thickness of 20 μm to 25 μm, and the second corrosion protection layer (302) has a thickness of 25 μm to 30 μm.
5. An electrostatic discharge transistor according to claim 1, wherein: the thickness of the aging resistant layer (303) is 40-45 μm, and the thickness of the insulating layer (304) is 0.1-0.15 mm.
CN202021840624.1U 2020-08-28 2020-08-28 Electrostatic discharge transistor Active CN212907738U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202021840624.1U CN212907738U (en) 2020-08-28 2020-08-28 Electrostatic discharge transistor

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Application Number Priority Date Filing Date Title
CN202021840624.1U CN212907738U (en) 2020-08-28 2020-08-28 Electrostatic discharge transistor

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CN212907738U true CN212907738U (en) 2021-04-06

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111916446A (en) * 2020-08-28 2020-11-10 深圳市东光晶鹏电子有限公司 Electrostatic discharge transistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111916446A (en) * 2020-08-28 2020-11-10 深圳市东光晶鹏电子有限公司 Electrostatic discharge transistor

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