CN212785850U - Silicon microphone with sound tunnel - Google Patents

Silicon microphone with sound tunnel Download PDF

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Publication number
CN212785850U
CN212785850U CN202021741038.1U CN202021741038U CN212785850U CN 212785850 U CN212785850 U CN 212785850U CN 202021741038 U CN202021741038 U CN 202021741038U CN 212785850 U CN212785850 U CN 212785850U
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sound
vibrating diaphragm
diaphragm
silicon
tunnel
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CN202021741038.1U
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金海鸥
吴念博
何新喜
朱信智
李碧英
杨萍
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Suzhou Liyue Musical Instrument Co Ltd
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Suzhou Liyue Musical Instrument Co Ltd
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Abstract

A silicon microphone with a sound tunnel comprises a sensor, a sound cavity and a circuit board; the sensor comprises a vibrating diaphragm and a silicon back plate; at least two radiation grooves are arranged on the vibrating diaphragm; the radiation grooves are uniformly distributed in a radial shape, and the surface of the vibrating diaphragm is equally divided into a plurality of resonance areas; the radiation groove is concavely arranged on the surface of the vibrating diaphragm to form a sound tunnel. The utility model discloses change into present standard vibration mode with the vibrating diaphragm by free vibration mode in the past, solved the problem of the unable effective full frequency channel sound detail of resonance of silicon wheat from vibration, sympathetic response's angle, constitute the silicon wheat and can reach the effect of high-fidelity at the effective resonance of full frequency channel.

Description

Silicon microphone with sound tunnel
Technical Field
The utility model relates to a silicon microphone, concretely relates to silicon microphone of voiced tunnel.
Background
A silicon microphone, also called a MEMS (Micro-Electro-Mechanical System) microphone, is a microphone manufactured based on MEMS technology. Because of its advantages over ECM in terms of miniaturization, performance, reliability, environmental tolerance, cost and mass production, it is rapidly taking the market for consumer electronics such as cell phones, headsets, PDAs, MP3 and hearing aids.
The silicon microphone consists of a MEMS sensor, an ASIC chip, a sound cavity and a circuit board with RF suppression circuitry. The MEMS sensor is a micro capacitor formed by a vibrating diaphragm and a silicon back plate, and can convert sound pressure change into capacitance change, and then the capacitance change is reduced by an ASIC chip and is converted into an electric signal, so that the sound-electricity conversion is realized.
The problems common to conventional silicon microphones are:
when a diaphragm of a silicon microphone receives sound waves emitted by an external sound source, due to the fact that the diaphragm has an inherent resonant frequency, if the diaphragm exceeds a certain range of a resonant frequency area, a high-pitch area and a low-pitch area cannot be effectively resonated, received sound is converted from sound to electricity, the high-pitch area cannot be lightened out due to the sound quality restored from electricity to sound, the low-pitch area is not perfectly round and smooth, and further the fidelity of the sound is poor. The reason for this is that the conventional diaphragm cannot satisfy a good wide-band vibration from a high-pitch region to a low-pitch region, i.e., cannot simultaneously adapt to a wide frequency change resonance and vibration of the high-pitch region, the middle-pitch region and the low-pitch region, and therefore cannot collect all sound details of a full frequency band when receiving sound. In conclusion, the traditional silicon microphone has unreasonable structural design, and is not beneficial to the diaphragm to exert good sound wave vibration from a high-pitch area to a low-pitch area.
Therefore, how to solve the above-mentioned deficiencies of the prior art is a problem to be solved by the present invention.
Disclosure of Invention
The utility model aims at providing a take silicon wheat of sound tunnel.
In order to achieve the above purpose, the utility model adopts the technical scheme that:
a silicon microphone with a sound tunnel comprises a sensor, a sound cavity and a circuit board; the sensor is positioned in the sound cavity and comprises a vibrating diaphragm and a silicon back plate;
wherein, the vibrating diaphragm is provided with at least two radiation grooves; the radiation grooves are uniformly distributed in a radial shape by taking the center of the vibrating diaphragm in the horizontal direction as a reference, so that the surface of the vibrating diaphragm is equally divided into a plurality of resonance areas;
the radiation groove is concavely arranged on the surface of the diaphragm to form a sound tunnel.
The relevant content in the above technical solution is explained as follows:
1. in the above-mentioned solution, "each of the radiation grooves is radially and uniformly arranged with reference to the center of the horizontal direction of the diaphragm", which is helpful for rapidly transmitting the vibration of the central region to the periphery of the diaphragm through the radial sound tunnel (i.e., the sound tunnel) formed by the radiation grooves.
2. In the scheme, the vibrating diaphragm is divided into a high-sound area at the outer section, a middle-sound area at the middle section and a low-sound area at the inner section from a sound-producing frequency band; the wall thickness of the diaphragm is gradually increased from outside to inside, the wall thickness of the low-sound area is larger than that of the middle-sound area, and the wall thickness of the middle-sound area is larger than that of the high-sound area.
By the design, the thicker bass region is arranged close to the center, so that the bass region of the vibrating diaphragm can be more easily resonated with low-frequency vibration with lower frequency and larger amplitude, and the restored sound can emit more muddy and smooth bass; through setting up thinner high pitch district in the position of keeping away from the center, can make the high pitch district of vibrating diaphragm produce the resonance with the frequency is higher more easily, the less high-frequency vibration of amplitude for sound after the reduction sends more penetrating, bright high pitch, and then makes the silicon microphone can be in the effective resonance of full frequency channel, makes tone quality, tone quality that sound after the reduction produced all obtain effectively promoting, reaches the effect of high-fidelity.
3. In the above-mentioned scheme, each radiation slot is the arc wall, can be so that the vibrating diaphragm minimize thickness sudden change in thickness, avoids influencing the sympathetic response and the vibration of vibrating diaphragm.
4. In the above scheme, smooth transition surfaces are arranged between the outer end of the radiation groove and the surface of the vibrating diaphragm.
The utility model discloses a theory of operation and advantage as follows:
the utility model relates to a silicon microphone with a sound tunnel, which comprises a sensor, a sound cavity and a circuit board; the sensor comprises a vibrating diaphragm and a silicon back plate; at least two radiation grooves are arranged on the vibrating diaphragm; the radiation grooves are uniformly distributed in a radial shape, and the surface of the vibrating diaphragm is equally divided into a plurality of resonance areas; the radiation groove is concavely arranged on the surface of the vibrating diaphragm to form a sound tunnel.
Compared with the prior art, can't compromise the problem that high, well, bass district possesses good sympathetic response resonance simultaneously when solving current silicon wheat and receiving sound, the utility model discloses vibrating diaphragm design in to current silicon wheat, especially silicon wheat has improved. Specifically, a radial groove is formed in the surface of the diaphragm, and a radial sound tunnel is formed in the surface of the diaphragm by the radial groove.
The utility model discloses sound high pitch district that restores out after receiving sound to current silicon microphone is bright not to come out, and the not enough problem of bass district muddy and mellow, deeply studied and studied silicon microphone's design and vibration mechanism, found out the current silicon microphone and received the not good leading reason of vibration of high pitch district and bass district because the diaphragm design is unreasonable to be sent. In view of the above, the inventor has broken the constraint that the design was constituteed to silicon microphone in the past, and the bold has proposed the utility model discloses an improve design scheme, this kind of improve design scheme changes the vibrating diaphragm into present standard vibration mode by free vibration mode in the past, can't effective resonance full frequency channel sound detail when having solved silicon microphone from vibration, sympathetic response angle, leads to the sound high pitch district after the reduction bright not to come out, and the problem that the bass region is perfectly mellow and full not enough. Practice proves that the improved design scheme has outstanding substantive features and remarkable technical progress, and obvious technical effect is obtained.
Because of the application of above-mentioned technical scheme, the utility model discloses compare with the vibrating diaphragm of current silicon wheat and have following advantage and effect:
1. the utility model discloses seted up radial slot on the vibrating diaphragm surface, this radial slot actually forms radial sound tunnel on the vibrating diaphragm, and the vibrating diaphragm receives to transmit to the edge all around of vibrating diaphragm rapidly through radial sound tunnel (the tunnel of sound promptly) after the vibration, and this resonance to improving the high pitch district has played the key role, can receive the high pitch frequency channel detail of sound better.
2. The utility model discloses a design of radial slot, the equal N piece resonance area the same with slot quantity of partition on the vibrating diaphragm. When the silicon microphone works, vibration is firstly transmitted to the central area of the vibrating diaphragm, then transmitted to each resonance area through the sound tunnel, and resonance and vibration are generated, so that the vibration of an external sound source is amplified to be resonance of the vibrating diaphragm. Each resonance area can generate an acoustic wave quantity, and an acoustic wave quantity is added to the acoustic wave quantity to form N +1 acoustic wave quantities. The sound wave quantity is the number of sound waves, and the sound wave quantity directly influences the tone color and tone quality of the diaphragm. Therefore, the design of the invention can obviously improve the tone color and the tone quality of the high-tone area and the low-tone area.
3. The utility model discloses an upper surface of vibrating diaphragm can be located to the slot, also can locate the lower surface of vibrating diaphragm, still can set up in the upper and lower two surfaces of vibrating diaphragm simultaneously.
Drawings
FIG. 1 is a schematic view of the structure of a silicon microphone (with the sound inlet hole located at the upper side);
fig. 2 is a schematic view of the structure of the silicon wheat of the present invention (the sound inlet hole is located at the lower side);
fig. 3 is a schematic structural diagram of a diaphragm in an embodiment of the present invention;
FIG. 4 is a top view of FIG. 3;
fig. 5 is a schematic view of the sound beam assembly of the embodiment of the present invention disposed on the upper surface of the diaphragm;
fig. 6 is a schematic view of the sound beam assembly according to the embodiment of the present invention disposed on the upper and lower surfaces of the diaphragm.
In the above drawings: 1. a sound cavity; 2. a circuit board; 3. vibrating diaphragm; 4. a sound beam assembly; an arc-shaped sound beam member; 5. a housing; 6. a sound inlet hole; 7. a central region; 8. an annular region; 9. a radiating trench; 10. a resonance region; 11. a silicon back plate; 12. a gap.
Detailed Description
The invention will be further described with reference to the following drawings and examples:
example (b): the present disclosure will be described more fully hereinafter with reference to the accompanying drawings, in which embodiments of the disclosure may be shown and described, and which, when modified and varied by the techniques taught herein, can be made by those skilled in the art without departing from the spirit and scope of the disclosure.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the disclosure. The singular forms "a", "an", "the" and "the", as used herein, also include the plural forms.
As used herein, "connected" or "positioned" refers to two or more elements or devices being in direct physical contact with each other or in indirect physical contact with each other, and may also refer to two or more elements or devices being in operation or acting on each other.
As used herein, the terms "comprising," "including," "having," and the like are open-ended terms that mean including, but not limited to.
As used herein, the term (terms), unless otherwise indicated, shall generally have the ordinary meaning as commonly understood by one of ordinary skill in the art, in this written description and in the claims. Certain words used to describe the disclosure are discussed below or elsewhere in this specification to provide additional guidance to those skilled in the art in describing the disclosure.
The terms "upper" and "lower" used herein are directional terms, and are used only for describing the positional relationship between the structures, and are not intended to limit the protection schemes and the actual implementation directions.
Referring to fig. 1-4, a silicon microphone with a sound tunnel comprises an MEMS sensor, a sound cavity 1 and a circuit board 2 with an RF suppression circuit; the MEMS sensor is positioned in the sound cavity 1 and comprises a vibrating diaphragm 3 and a silicon back plate 11; the silicon back plate and the silicon back plate are arranged at intervals, and the silicon back plate 11 is arranged corresponding to a sound inlet hole 6 on the silicon wheat shell 5.
The vibrating diaphragm 3 is provided with a sound beam component 4, the sound beam component 4 is fixedly arranged on the lower surface of the vibrating diaphragm 3, and the middle part of the vibrating diaphragm 3 is defined into a central area 7; the sound beam assembly 4 includes a plurality of arc-shaped sound beam members 4a, each of the arc-shaped sound beam members 4a is arranged in a ring shape around the center of the horizontal direction of the diaphragm, and a gap 12 is formed between two adjacent arc-shaped sound beam members 4 a.
An annular area 8 is formed on the lower surface of the diaphragm 3 and is provided with at least two radiation grooves 9; the radiation groove 9 is concavely arranged on the surface of the diaphragm 3 to form a sound tunnel.
The annular region 8 is arranged around the central region 7 and between the sound beam assembly 4 and the central region 7, whereby the design may contribute to the convergence of the annular region 8 on the vibrations of the central region of the diaphragm 3. The annular region 8 may be an annular groove.
Each of the radiation grooves 9 is uniformly arranged in a radial shape with reference to the center of the diaphragm 3 in the horizontal direction, which helps to quickly transmit the vibration of the central region 7 to the periphery of the diaphragm 3 through a radial sound tunnel (i.e., a sound tunnel) formed by the radiation grooves 9. Meanwhile, the surface of the vibrating diaphragm 3 positioned outside the sound beam component 4 is equally divided into a plurality of resonance areas 10, the radiation grooves 9 are matched with the gaps 12 between the two arc-shaped sound beam components 4a in a one-to-one alignment mode, the radiation grooves 9 are arranged in the gaps 12 in a penetrating mode, and the inner ends of the radiation grooves 9 are communicated with the annular area 8.
Through set up sound beam assembly 7 on the lower surface at vibrating diaphragm 3, because the relative high pitch amplitude of bass is big, the frequency is low, the bass sympathetic response is concentrated on vibrating diaphragm 3 and is close to the region of central authorities, and the high pitch sympathetic response is concentrated on the peripheral region all around of vibrating diaphragm 3, strengthens vibrating diaphragm 3 central zone intensity, has played the important function to the bass tone color and the tone quality that improve the high fidelity. Because the thickness of the diaphragm 3 is a thickness gradually changing structure (namely, the design of the thickness of the outer part and the thickness of the inner part) with the thickness of the central area being thick and the thickness of the periphery being thin, the strength of the central area of the diaphragm 3 is enhanced, the thickness difference between the central area of the diaphragm 3 and the periphery area is relatively changed, and the high-fidelity high-pitched sound and the high-fidelity sound quality can be improved.
Through set up radial radiation slot 9 on the lower surface of vibrating diaphragm 3, this radiation slot 9 actually forms radial sound tunnel at the surface of vibrating diaphragm 3, gather the vibration through annular region 8, the transmission is all around to vibrating diaphragm 3 rapidly to radial sound tunnel (the tunnel of sound) rethread, simultaneously through four resonance regions 10 of equalling divide on vibrating diaphragm 3, the vibration accessible sound tunnel transmits to these four resonance regions 10, and produce the resonance, can obviously improve the tone quality in bass region and high-pitched region.
Preferably, the diaphragm 3 is divided into a high-sound region of the outer section, a middle-sound region of the middle section and a low-sound region of the inner section from the sound-producing frequency band. The wall thickness of the diaphragm 3 is gradually increased from outside to inside, the wall thickness of a low-sound area is larger than that of a middle-sound area, and the wall thickness of the middle-sound area is larger than that of a high-sound area; the sound beam component 4 is positioned in the bass region and can improve the middle load of the vibrating diaphragm 3.
By the design, the thicker bass region is arranged at a position close to the center, so that the bass region of the vibrating diaphragm 3 can be more easily resonated with low-frequency vibration with lower frequency and larger amplitude, and the restored sound can emit more muddy and smooth bass; and set up in the position of keeping away from the center through the high-range with thinner, can make the high-range of vibrating diaphragm 3 produce the resonance with the frequency is higher more, the less high-frequency vibration of amplitude more easily for sound after the reduction sends more penetrating, bright high pitch, and then makes the silicon microphone can be in the effective resonance of full frequency channel, makes tone quality, tone quality that sound after the reduction produced all effectively promote, reaches the effect of high-fidelity.
A gap 12 is designed between the two arc-shaped sound beam members 4a, and the radiation groove 9 is arranged in the gap 12 in a penetrating manner. Borrow this design, be favorable to through sound tunnel transmission vibration to more be favorable to promoting the vibration response rate of vibrating diaphragm 3.
Preferably, when the diaphragm 3 is horizontal, the center line of the sound beam assembly 4 in the up-down direction overlaps with the center line of the diaphragm 3 in the up-down direction.
Preferably, the annular groove and each of the radiation grooves 9 are arc-shaped grooves, so that the thickness of the diaphragm 3 is reduced as much as possible, and resonance and vibration of the diaphragm 3 are prevented from being influenced.
Wherein, a smooth transition surface is arranged between the outer end of the radiation groove 9 and the lower surface of the diaphragm 3. So that the vibration is transmitted more uniformly to the peripheral portion of the diaphragm 3.
Other embodiments and structural changes of the present invention are described below as follows:
1. in the above embodiments, the illustrated silicon wheat is only used for illustration, the structure is not used to limit the protection scope of the present invention, and other silicon wheat with similar structure should be covered by the protection scope of the present invention if the technical features of the present invention are adopted.
2. In the above embodiments, the number of the beam assemblies 4 is not limited to one set, but may be multiple sets of parallel or other designs that help to strengthen the load in the middle of the diaphragm 3, which is easily understood and accepted by those skilled in the art.
3. In the above embodiments, the sound beam assembly 4, the annular region 8 and the radiation groove 9 may be located on the lower surface of the diaphragm 3 (as shown in fig. 4), on the upper surface of the diaphragm 3 (as shown in fig. 5), or on both the upper and lower surfaces of the diaphragm 3 (as shown in fig. 6).
4. In the above embodiment, the annular groove and the radiation groove 9 are arc-shaped grooves. However, the present invention is not limited thereto, and the annular groove and the radial groove 9 may be designed into other shapes, such as a V-shaped, U-shaped, W-shaped, and other concave structures. As would be readily understood and accepted by those skilled in the art.
5. In the above embodiments, the diaphragm 3 may be a silicon diaphragm (such as a monocrystalline silicon, a polycrystalline silicon, a silicon nitride plus an electrode), or may be a diaphragm made of other materials with the same or similar functions and effects.
The utility model discloses sound high pitch district that restores out after receiving sound to current silicon microphone is bright not to come out, and the not enough problem of bass district muddy and mellow, deeply studied and studied silicon microphone's design and sound production mechanism, found out the current silicon microphone and received the not good leading reason of tone quality in high pitch district and bass district because the vibrating diaphragm design is unreasonable to be sent. In view of the above, the inventor has broken the constraint that the design was constituteed to silicon microphone in the past, and the bold has proposed the utility model discloses an improve design, this kind of improve design changes the vibrating diaphragm into present standard vibration mode by the free vibration mode in the past, and the sound high pitch district that has reduced out after having solved silicon microphone and receiving sound from vibration, sympathetic response angle is bright not come out, and the problem that the bass district is muddy and mellow not enough has improved the fidelity of each frequency channel sound, practice proves that this improve design has outstanding substantive characteristics and apparent technological progress to obvious technological effect has been obtained.
The above embodiments are only for illustrating the technical concept and features of the present invention, and the purpose of the embodiments is to enable people skilled in the art to understand the contents of the present invention and to implement the present invention, which cannot limit the protection scope of the present invention. All equivalent changes and modifications made according to the spirit of the present invention should be covered by the protection scope of the present invention.

Claims (4)

1. The utility model provides a take silicon wheat of sound tunnel which characterized in that:
comprises a sensor, a sound cavity (1) and a circuit board (2); the sensor is positioned in the sound cavity (1) and comprises a vibrating diaphragm (3) and a silicon back plate (11);
wherein, the diaphragm (3) is provided with at least two radiation grooves (9); the radiation grooves (9) are uniformly distributed in a radial shape by taking the center of the vibrating diaphragm (3) in the horizontal direction as a reference, so that the surface of the vibrating diaphragm (3) is equally divided into a plurality of resonance areas (10);
the radiation groove (9) is concavely arranged on the surface of the diaphragm (3) to form a sound tunnel.
2. The silicon microphone with tone tunnel of claim 1, wherein: the vibrating diaphragm (3) is divided into a high-sound area of an outer section, a middle-sound area of a middle section and a low-sound area of an inner section from a sound-producing frequency band;
the wall thickness of the diaphragm (3) is gradually thickened from outside to inside, the wall thickness of the low-sound area is larger than that of the medium-sound area, and the wall thickness of the medium-sound area is larger than that of the high-sound area.
3. The silicon microphone with tone tunnel of claim 1, wherein: each radiation groove (9) is an arc-shaped groove.
4. The silicon microphone with tone tunnel of claim 1, wherein: smooth transition surfaces are arranged between the outer end of the radiation groove (9) and the surface of the vibrating diaphragm (3).
CN202021741038.1U 2020-08-19 2020-08-19 Silicon microphone with sound tunnel Active CN212785850U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202021741038.1U CN212785850U (en) 2020-08-19 2020-08-19 Silicon microphone with sound tunnel

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202021741038.1U CN212785850U (en) 2020-08-19 2020-08-19 Silicon microphone with sound tunnel

Publications (1)

Publication Number Publication Date
CN212785850U true CN212785850U (en) 2021-03-23

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CN202021741038.1U Active CN212785850U (en) 2020-08-19 2020-08-19 Silicon microphone with sound tunnel

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CN (1) CN212785850U (en)

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