CN212741575U - Heat exchange device and single crystal furnace - Google Patents
Heat exchange device and single crystal furnace Download PDFInfo
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- CN212741575U CN212741575U CN202020747357.7U CN202020747357U CN212741575U CN 212741575 U CN212741575 U CN 212741575U CN 202020747357 U CN202020747357 U CN 202020747357U CN 212741575 U CN212741575 U CN 212741575U
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Abstract
The utility model provides a heat transfer device and single crystal growing furnace relates to monocrystalline silicon and makes technical field. Wherein, heat transfer device includes: the device comprises an inner cylinder, an outer cylinder and at least one accommodating pipe; the inner cylinder is sleeved in the outer cylinder, and the inner cylinder and the outer cylinder form an accommodating space together; at least one accommodating pipe is arranged in the accommodating space, a gap is formed between the accommodating pipe and the inner cylinder and between the accommodating pipe and the outer cylinder, and a heat-conducting medium is filled in the accommodating pipe; a cooling medium flows in the gap. The utility model discloses heat transfer device can effectively promote the heat exchange efficiency of czochralski silicon single crystal rod, can promote the growth rate of crystal to can effectively reduce the manufacturing cost of single crystal silicon rod.
Description
Technical Field
The utility model relates to a monocrystalline silicon makes technical field, especially relates to a heat transfer device and single crystal growing furnace.
Background
With the development of photovoltaic power generation technology, monocrystalline silicon wafers, which are one of the basic materials, have wide market demands.
Currently, when a silicon single crystal rod is pulled by the Czochralski method in a single crystal furnace, the silicon single crystal rod grows vertically from the surface of the molten silicon liquid upward during the pulling process. In the growth process of the single crystal silicon rod, the latent heat of crystallization emitted by the single crystal silicon rod needs to be absorbed in time to provide a larger longitudinal temperature gradient for the growth of the single crystal silicon rod, so that the high growth speed of the single crystal silicon rod is ensured. In the single crystal furnace in the prior art, a heat shield surrounding a single crystal silicon rod is arranged above a crystal growth interface, and working gas enters a pulling channel of the single crystal silicon rod along the inner side of the heat shield to purge the interface. However, this method has a limited heat absorption effect on the single crystal silicon rod, which is not favorable for providing an optimized longitudinal temperature gradient, and limits further increase of the crystal growth rate and reduction of the production cost of the single crystal silicon rod.
SUMMERY OF THE UTILITY MODEL
The utility model provides a heat transfer device and single crystal growing furnace aims at promoting the heat exchange efficiency of vertical pulling single crystal silicon rod, promotes crystal growth speed, reduces the manufacturing cost of single crystal silicon rod.
In a first aspect, an embodiment of the present invention provides a heat exchange device, including: the device comprises an inner cylinder, an outer cylinder and at least one accommodating pipe;
the inner cylinder is sleeved in the outer cylinder, and the inner cylinder and the outer cylinder form an accommodating space together;
at least one accommodating pipe is arranged in the accommodating space, a gap is formed between the accommodating pipe and the inner cylinder and between the accommodating pipe and the outer cylinder, and a heat-conducting medium is filled in the accommodating pipe;
a cooling medium flows in the gap.
Optionally, the accommodating tube is spirally wound between the inner cylinder and the outer cylinder; or the like, or, alternatively,
the accommodating pipe is radially arranged between the inner cylinder and the outer cylinder.
Optionally, the inner barrel has a plurality of grooves having a diameter less than or equal to 10 mm.
Optionally, the central axis of the inner barrel coincides with the central axis of the outer barrel.
Optionally, the accommodating tube is a stainless steel tube or a copper tube.
Optionally, the heat conducting medium is at least one of graphite, heat conducting silica gel or heat conducting silicone grease.
Optionally, the cooling medium is at least one of water or an inert gas.
Optionally, the containment tube is circular in cross-section.
Optionally, the heat absorption efficiency of the side of the inner cylinder far away from the outer cylinder is greater than 90%, and the heat absorption efficiency of the side of the outer cylinder far away from the inner cylinder is less than 10%.
In a second aspect, an embodiment of the present invention further provides a single crystal furnace, which includes a heat shield and the heat exchange device;
the heat exchange device is placed on the inner side of the heat shield, and the central axis of the heat exchange device is overlapped with the central axis of the heat shield.
Optionally, the single crystal furnace has silicon melt to be pulled, and along the central axis direction of the heat exchange device, the size of the projection area of the accommodating space of the heat exchange device far away from the surface of the silicon melt is larger than the size of the projection area of the accommodating space near the surface of the silicon melt.
The embodiment of the utility model provides a heat transfer device, inner tube and urceolus form accommodating space jointly, and at least one holds the pipe setting in accommodating space to and have the clearance between inner tube and the urceolus, hold and pack heat-conducting medium in the pipe, cooling medium flows in the clearance. Be provided with the pipe that holds that is used for filling heat-conducting medium in the accommodating space between inner tube and the urceolus, hold pipe and heat-conducting medium and all can play the heat conduction effect, compare with prior art, the embodiment of the utility model provides a heat transfer device in the heat-conducting medium more, heat conduction area is bigger, can effectively promote heat transfer device's coefficient of heat conductivity. The cooling medium flows in the gap, and can take away the heat absorbed by the accommodating tube, the heat-conducting medium and the side wall of the inner barrel, namely, more heat can be taken away by the cooling medium, so that the heat exchange efficiency of the straight-pull silicon single crystal rod can be improved, the growth speed of the silicon single crystal rod can be improved, and the production cost of the silicon single crystal rod is reduced. Moreover, the cooling medium flows along the outer wall of the accommodating pipe in the gap, and because the accommodating pipe is arranged in the accommodating space and the heat-conducting medium is filled in the accommodating pipe, the circulation path of the cooling medium can be kept unchanged to realize stable heat exchange, and meanwhile, the problems that the circulation path of the cooling medium is disturbed and even the circulation path of the cooling medium is blocked due to the fact that the heat-conducting medium is directly exposed in the cooling medium can be avoided.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required to be used in the description of the embodiments of the present invention will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without inventive labor.
Fig. 1 shows a cross-sectional view of a heat exchange device according to an embodiment of the present invention;
fig. 2 shows a schematic diagram of a heat exchange device in a growth stage of monocrystalline silicon according to an embodiment of the present invention.
Description of reference numerals:
11-inner cylinder, 12-outer cylinder, 13-containing tube, 14-containing space, 15-gap, 20-single crystal silicon rod.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, not all, of the embodiments of the present invention. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative efforts belong to the protection scope of the present invention.
Referring to fig. 1 and 2, the embodiment of the utility model provides a heat exchange device, include: an inner cylinder 11, an outer cylinder 12, and at least one accommodating tube 13;
the inner cylinder 11 is sleeved in the outer cylinder 12, and the inner cylinder 11 and the outer cylinder 12 together form an accommodating space 14;
at least one accommodating tube 13 is arranged in the accommodating space 14, a gap 15 exists between the accommodating tube 13 and the inner cylinder 11 and the outer cylinder 12, and the accommodating tube 13 is filled with a heat-conducting medium;
a cooling medium flows in said gap 15.
Specifically, as shown in fig. 1, the heat exchanging device comprises an inner cylinder 11, an outer cylinder 12 and at least one accommodating tube 13, wherein the heat exchanging device is used for absorbing heat emitted in the growth process of the single crystal silicon rod and taking away the absorbed heat by a cooling medium which flows in a circulating manner, so that a temperature gradient is provided for the growth of the single crystal silicon rod, and the growth speed of the single crystal silicon rod is ensured. The inner cylinder 11 and the outer cylinder 12 can be both stainless steel cylinder structures, and the accommodating pipe 13 can be a stainless steel pipe or a copper pipe. The inner cylinder 11 is sleeved in the outer cylinder 12, and the inner cylinder 11 and the outer cylinder 12 together form an accommodating space 14, so that the diameter of the inner cylinder 11 is smaller than that of the outer cylinder 12, the upper edge of the inner cylinder 11 is connected with the upper edge of the outer cylinder 11 through an annular surface, and the lower edge of the inner cylinder 11 is connected with the lower edge of the outer cylinder 11 through another annular surface, so that the inner cylinder 11 and the outer cylinder 12 are connected to form a cavity structure with double-layer side walls, and thus, along with the growth of crystals, the single crystal silicon rod 20 can pass through the cavity structure, as shown in fig. 2.
Wherein at least one accommodating tube 13 is arranged in the accommodating space 14, and the accommodating tube 13 is filled with a heat conducting medium. It can be understood that the heat-conducting medium may be graphite, heat-conducting silica gel, or heat-conducting silicone grease, etc., which have high thermal conductivity. After the heat transfer medium is filled in the accommodating tube 13, the end of the accommodating tube 13 needs to be sealed, for example, by covering the end of the accommodating tube 13 with a sealing cap. The sealed accommodating tube 13 can provide an accommodating space for the heat-conducting medium and can separate the heat-conducting medium from the cooling medium, so that the heat-conducting medium can be prevented from directly contacting with the cooling medium, the cooling medium can be prevented from oxidizing or corroding the heat-conducting medium, and the heat conductivity coefficient of the heat-conducting medium can be reduced. Further, the heat transfer medium is exposed to the cooling medium, and may be broken, and the broken heat transfer medium may block the circulation path of the cooling medium, so that the cooling medium cannot flow through the gap 15, and heat cannot be removed. The accommodating tube 13 may be fixed to a sidewall between the inner cylinder 11 and the outer cylinder 12, for example, the accommodating tube 13 may be welded to a sidewall of the inner cylinder 11 adjacent to the outer cylinder 12. Of course, the number of the accommodating tubes 13 may be one, two or more, the cross-sectional shape of the accommodating tubes 13 may also be triangular, circular or polygonal, and those skilled in the art may set the number, shape, specification, installation position, etc. of the accommodating tubes 13 according to actual conditions, which is not limited by the embodiment of the present invention.
The cooling medium flows in the gap 15, and in practical applications, two through holes may be formed in the upper surface of the cavity structure, and the cooling medium flows into the gap 15 from one through hole and flows out of the gap 15 from the other through hole, so that the cooling medium can circulate in the gap 15. Due to the fact that the accommodating pipe 13 is arranged in the accommodating space 14, the cooling medium can flow along the outer surface of the accommodating pipe 13, the accommodating pipe 13 can be fixedly installed in the accommodating space 14, the circulation path of the cooling medium can be guaranteed to be unchanged, the temperature around the heat exchange device can be kept constant, and the problems that the circulation path of the cooling medium is disturbed due to the fact that the accommodating pipe 13 or the heat conducting medium moves in the cooling medium can be avoided.
The flowing cooling medium can continuously take away the heat absorbed by the accommodating tube 13, the heat-conducting medium, the side wall of the inner tube 11 and the like, and the accommodating tube 13, the heat-conducting medium and the inner tube 11 can continuously absorb the heat, so that the heat emitted by the single crystal silicon rod can be continuously absorbed and taken away by the heat exchange device. Wherein, cooling medium can be water or inert gas, and suitable cooling medium can be chooseed for use according to actual conditions to the technical staff in the field, the embodiment of the utility model does not limit to this.
The heat quantity emitted by the single crystal silicon rod absorbed by the heat exchange device can be represented by formula (1):
Q＝F·K·(T1-T2) (1)
in the formula (1), Q represents the total amount of heat absorption, F represents the heat absorption area, K represents the heat absorption efficiency, and T represents1Indicating the temperature, T, of the cooling medium flowing out of the heat exchanger2Which indicates the temperature at which the cooling medium flows into the heat exchanging device. The embodiment of the utility model provides a heat transfer device can increase endothermic efficiency K, moreover, flows into heat transfer device's temperature T at the cooling medium2At the same time, the temperature T of the cooling medium flowing out of the heat exchanger1Increase, thereby T1And T2The difference increase, then can see out in combination formula (1), the embodiment of the utility model provides an absorbed single crystal silicon rod of heat transfer device gives off the heat increase. In practical experiment, the embodiment of the utility model provides a heat transfer device's heat exchange efficiency can promote 17% -20%, and the speed that single crystal silicon rod grows can promote 12% -15%.
The embodiment of the utility model provides a heat transfer device, inner tube and urceolus form accommodating space jointly, and at least one holds the pipe setting in accommodating space to and have the clearance between inner tube and the urceolus, hold and pack heat-conducting medium in the pipe, cooling medium flows in the clearance. Be provided with the pipe that holds that is used for filling heat-conducting medium in the accommodating space between inner tube and the urceolus, hold pipe and heat-conducting medium and all can play the heat conduction effect, compare with prior art, the embodiment of the utility model provides a heat transfer device in the heat-conducting medium more, heat conduction area is bigger, can effectively promote heat transfer device's coefficient of heat conductivity. The cooling medium flows in the gap, and can take away the heat absorbed by the accommodating tube, the heat-conducting medium and the side wall of the inner barrel, namely, more heat can be taken away by the cooling medium, so that the heat exchange efficiency of the straight-pull silicon single crystal rod can be improved, the growth speed of the silicon single crystal rod can be improved, and the production cost of the silicon single crystal rod is reduced.
Moreover, the cooling medium flows along the outer wall of the accommodating pipe in the gap, and because the accommodating pipe is arranged in the accommodating space and the heat-conducting medium is filled in the accommodating pipe, the circulation path of the cooling medium can be kept unchanged to realize stable heat exchange, and meanwhile, the problems that the circulation path of the cooling medium is disturbed and even the circulation path of the cooling medium is blocked due to the fact that the heat-conducting medium is directly exposed in the cooling medium can be avoided.
Alternatively, the accommodating tube 13 is spirally wound between the inner cylinder 11 and the outer cylinder 12; or the like, or, alternatively,
the accommodating pipe 13 is radially disposed between the inner cylinder 11 and the outer cylinder 12.
Specifically, the accommodating tube 13 is provided between the inner tube 11 and the outer tube 12, and for example, the accommodating tube 13 may be welded to a side of the inner tube 11 adjacent to the outer tube 12, may be welded to a side of the outer tube 12 adjacent to the inner tube 11, and may be provided on an upper surface or a lower surface connecting the inner tube 11 and the outer tube 12. Wherein, hold pipe 13 and can be the heliciform and twine in accommodating space 14's lateral wall, also can be and radially set up in accommodating space 14, compare traditional scheme, the embodiment of the utility model provides an in hold pipe 13 the volume bigger, can fill more heat-conducting medium to can improve heat transfer device's coefficient of heat conductivity, with absorb more heat, then more heat can be taken away to cooling medium. Therefore, the heat exchange efficiency of the straight pulling silicon single crystal rod can be improved, so that the purposes of improving the growth speed of the silicon single crystal rod and reducing the production cost of the silicon single crystal rod are achieved.
Optionally, the inner barrel 11 has a plurality of grooves with a diameter less than or equal to 10 mm.
Specifically, the inner cylinder 11 has a plurality of grooves, which may be machined in the inner wall during the machining of the inner cylinder 11 to increase the heat absorption area of the surface of the inner cylinder 11. Due to the cavity structure formed by the inner cylinder 11 during the growth of the single crystal silicon rod, the groove can be arranged on one side of the inner cylinder 11 far away from the outer cylinder 12, so that the heat absorption area of one side of the inner cylinder 11 far away from the outer cylinder 12 can be increased, and more heat can be absorbed. Wherein, the recess can be for hemisphere groove, cuboid groove etc. and the recess can be at the irregular range of inner wall, also can be linear array arrangement at the inner wall, and the shape, quantity and the arrangement mode etc. that the recess can be set for according to actual conditions to the technical personnel in the field, the embodiment of the utility model provides a do not limit to this. Preferably, when the groove is a hemispherical groove, the diameter of the groove may be less than or equal to 10mm, so as to avoid that the strength of the inner barrel 11 is affected by the oversize of the groove, and further avoid that the accommodating pipe 13 is not easily fixed due to the oversize of the groove.
Optionally, the central axis of the inner cylinder 11 coincides with the central axis of the outer cylinder 12.
Specifically, the central axis of the inner cylinder 11 coincides with the central axis of the outer cylinder 12, and the accommodating space 14 between the inner cylinder 11 and the outer cylinder 12 can be uniformly distributed along the central axis of the inner cylinder 11, so that the accommodating pipes 13 can be uniformly distributed along the central axis, that is, the heat conducting medium can be uniformly distributed along the central axis. Thus, the heat absorbed by the heat exchange device can be distributed more evenly along the central axis. On the other hand, the cooling medium flows in the gap 15, and the circulation path of the cooling medium can be ensured to be uniformly distributed along the central axis of the inner tube 11. Therefore, the axis of the inner cylinder 11 is coincident with the axis of the outer cylinder 12, so that the temperature in the inner cylinder 11 can be ensured to be constant, and the growth of the monocrystalline silicon rod in a constant temperature environment can be ensured.
Alternatively, the accommodating tube 13 may be a stainless steel tube or a copper tube. Wherein, hold pipe 13 and be the stainless steel pipe, hold pipe 13 and also can absorb the heat that partly single crystal silicon rod gived off, compare traditional scheme, can promote heat transfer device's heat exchange efficiency. Of course, the heat absorption efficiency of the copper pipe is ten times that of the stainless steel pipe, and the accommodating pipe 13 can also be a copper pipe, so that the heat exchange efficiency of the heat exchange device can be further improved. In addition, the sectional shape of the accommodating tube 13 may be circular to facilitate manufacturing, and the circular sectional accommodating tube 13 may be produced at a lower cost than the accommodating tubes 13 of other sectional shapes, which may reduce the cost of growing the single crystal silicon rod. Preferably, the heat-conducting medium filled in the accommodating tube 13 may be graphite, such as isostatic graphite, or may also be a substance with high heat-absorbing efficiency, such as heat-conducting silica gel or heat-conducting silicone grease. The type of the heat conducting medium can be selected by those skilled in the art according to practical situations, and the embodiments of the present invention are not limited thereto.
In the embodiment of the present invention, the cooling medium may be water or inert gas. Because water is a cooling medium with lower cost and higher heat absorption efficiency, the water circulates in the gap 15 to take away the heat absorbed by the inner cylinder 11, the accommodating pipe 13 and the heat-conducting medium, so that the cost can be reduced while the cooling effect is ensured. Moreover, the water is not corrosive, the accommodating pipe 13, the inner cylinder 11 and the outer cylinder 12 are not corroded, and the service life of the heat exchange device can be prolonged. Of course, the cooling medium may also be an inert gas such as argon, and a person skilled in the art may select the cooling medium according to actual conditions, which is not limited by the embodiment of the present invention.
Optionally, the heat absorption efficiency of the side of the inner cylinder 11 far away from the outer cylinder 12 is greater than 90%, and the heat absorption efficiency of the side of the outer cylinder 12 far away from the inner cylinder 11 is less than 10%.
Specifically, the side of the inner cylinder 11 away from the outer cylinder 12 can be subjected to processes such as sand blasting or oxidation blackening, so that the heat absorption efficiency of the side of the inner cylinder 11 away from the outer cylinder 12 is greater than 90%, and the heat absorption efficiency of the side of the inner cylinder 11 away from the outer cylinder 12 can be improved due to the fact that the side of the inner cylinder 11 away from the outer cylinder 12 is close to the monocrystalline silicon rod, and therefore the heat exchange efficiency of the heat exchange device can be further improved. Certainly, in order to prevent the heat absorbed by the heat exchange device from diffusing outwards to increase the temperature outside the heat exchange device and prevent one side of the outer cylinder 12 of the heat exchange device, which is far away from the inner cylinder 11, from absorbing the heat outside the heat exchange device to cause the disorder of temperature gradient, mirror polishing treatment can be performed on one side of the outer cylinder 12, which is far away from the inner cylinder 11, so that the heat absorption efficiency of one side of the outer cylinder 12, which is far away from the inner cylinder 11, is less than 10%, and a heat insulation effect is. Therefore, the heat absorbed by the inner cylinder 11, the accommodating pipe 13 and the heat-conducting medium can be taken away by the cooling medium more, and the heat exchange efficiency of the heat exchange device is improved.
The embodiment of the utility model also provides a single crystal furnace, which comprises a heat shield and the heat exchange device;
the heat exchange device is placed on the inner side of the heat shield, and the central axis of the heat exchange device is overlapped with the central axis of the heat shield.
Specifically, the single crystal furnace comprises a heat shield and the heat exchange device, the heat exchange device is placed on the inner side of the heat shield, and the central axis of the heat exchange device is overlapped with the central axis of the heat shield. The silicon single crystal rod vertically grows upwards from the liquid level of the molten silicon, sequentially passes through the heat shield and the heat exchange device, and finally reaches the stretching cavity of the auxiliary chamber. In-process at the growth of single crystal silicon rod, the embodiment of the utility model provides a single crystal growing furnace can promote the heat exchange efficiency of straight pull single crystal silicon rod to the vertical temperature gradient of thermal field in the increase single crystal growing furnace then can increase the growth rate of single crystal silicon rod. The utility model discloses the growth rate of single crystal silicon rod in the single crystal furnace can promote 12% to 15%, because the time that single crystal silicon rod grows reaches 20 hours to 30 hours, then can effectively reduce the required time of single crystal silicon rod growth to can effectively reduce the manufacturing cost of single crystal silicon rod.
Optionally, the single crystal furnace has silicon melt to be pulled, and along the central axis direction of the heat exchange device, the size of the projection area of the accommodating space 14 of the heat exchange device far away from the surface of the silicon melt is larger than the size of the projection area of the accommodating space 14 near the surface of the silicon melt.
Specifically, the silicon melt to be pulled is arranged in the single crystal furnace, and the silicon single crystal rod vertically grows upwards from the liquid level of the silicon melt along the direction of the central axis of the heat exchange device. The size of the projection area of the accommodating space 14 of the heat exchange device far away from the surface of the molten silicon is larger than the size of the projection area of the accommodating space 14 near the surface of the molten silicon, which is equivalent to that the inner cylinder 11 and the outer cylinder 12 are inverted conical cylinders, so that the accommodating space 14 is inclined relative to the axis of the inner cylinder 11, compared with the prior art, the inclined accommodating space 14 has larger volume, more heat-conducting media can be placed in the accommodating pipe 13, and more cooling media can circulate and flow to take away heat. Thus, the heat exchange efficiency can be further improved.
It should be noted that, the embodiment of the single crystal furnace and the embodiment of the heat exchange device may be referred to each other, and related parts are not described again in order to avoid repetition.
It should be noted that, in this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
While the embodiments of the present invention have been described with reference to the accompanying drawings, the present invention is not limited to the above-described embodiments, which are merely illustrative and not restrictive, and many modifications may be made by one skilled in the art without departing from the spirit and scope of the present invention as defined in the appended claims.
Claims (11)
1. A heat exchange device, comprising: the device comprises an inner cylinder, an outer cylinder and at least one accommodating pipe;
the inner cylinder is sleeved in the outer cylinder, and the inner cylinder and the outer cylinder form an accommodating space together;
at least one accommodating pipe is arranged in the accommodating space, a gap exists between the accommodating pipe and the inner cylinder and between the accommodating pipe and the outer cylinder, and a heat-conducting medium is filled in the accommodating pipe;
the gap is used for flowing of cooling medium.
2. The heat exchange device of claim 1, wherein the accommodating tube is spirally wound between the inner cylinder and the outer cylinder; or the like, or, alternatively,
the accommodating pipe is radially arranged between the inner cylinder and the outer cylinder.
3. The heat exchange device of claim 1, wherein the inner barrel has a plurality of grooves, the grooves having a diameter of less than or equal to 10 mm.
4. The heat exchange device of claim 1, wherein the central axis of the inner cartridge coincides with the central axis of the outer cartridge.
5. The heat exchange device of claim 1, wherein the containment tube is a stainless steel or copper tube.
6. The heat exchange device of claim 1, wherein the heat transfer medium is at least one of graphite, heat transfer silica gel, or heat transfer silicone grease.
7. The heat exchange device of claim 1, wherein the cooling medium is at least one of water or an inert gas.
8. The heat exchange device of claim 1, wherein the containment tube is circular in cross-section.
9. The heat exchange device of claim 1, wherein the heat absorption efficiency of the side of the inner cylinder remote from the outer cylinder is greater than 90%, and the heat absorption efficiency of the side of the outer cylinder remote from the inner cylinder is less than 10%.
10. A single crystal furnace comprising a heat shield and the heat exchange apparatus of any one of claims 1 to 9;
the heat exchange device is placed on the inner side of the heat shield, and the central axis of the heat exchange device is overlapped with the central axis of the heat shield.
11. The single crystal furnace of claim 10, wherein the single crystal furnace has silicon melt to be pulled, and a projected area of the accommodating space of the heat exchanging device away from the surface of the silicon melt is larger than a projected area of the accommodating space close to the surface of the silicon melt in a direction of a central axis of the heat exchanging device.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2024032332A1 (en) * | 2022-08-09 | 2024-02-15 | 隆基绿能科技股份有限公司 | Monocrystalline silicon rod drawing apparatus and method, heat exchanger, and heat exchange assembly |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2024032332A1 (en) * | 2022-08-09 | 2024-02-15 | 隆基绿能科技股份有限公司 | Monocrystalline silicon rod drawing apparatus and method, heat exchanger, and heat exchange assembly |
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