CN212722901U - Plasmon enhanced fluorescence immunoassay chip - Google Patents
Plasmon enhanced fluorescence immunoassay chip Download PDFInfo
- Publication number
- CN212722901U CN212722901U CN202020994416.0U CN202020994416U CN212722901U CN 212722901 U CN212722901 U CN 212722901U CN 202020994416 U CN202020994416 U CN 202020994416U CN 212722901 U CN212722901 U CN 212722901U
- Authority
- CN
- China
- Prior art keywords
- metal
- layer
- nano
- periodic
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000003018 immunoassay Methods 0.000 title claims description 16
- 229910052751 metal Inorganic materials 0.000 claims abstract description 50
- 239000002184 metal Substances 0.000 claims abstract description 50
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 230000000737 periodic effect Effects 0.000 claims abstract description 32
- 239000011159 matrix material Substances 0.000 claims abstract description 11
- 229920002521 macromolecule Polymers 0.000 claims abstract description 7
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical group [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 239000011651 chromium Substances 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 102000004169 proteins and genes Human genes 0.000 abstract description 9
- 108090000623 proteins and genes Proteins 0.000 abstract description 8
- 230000035945 sensitivity Effects 0.000 abstract description 7
- 230000004907 flux Effects 0.000 abstract description 5
- 102000039446 nucleic acids Human genes 0.000 abstract description 4
- 108020004707 nucleic acids Proteins 0.000 abstract description 4
- 150000007523 nucleic acids Chemical class 0.000 abstract description 4
- 238000002360 preparation method Methods 0.000 abstract description 4
- 229920001184 polypeptide Polymers 0.000 abstract description 3
- 102000004196 processed proteins & peptides Human genes 0.000 abstract description 3
- 108090000765 processed proteins & peptides Proteins 0.000 abstract description 3
- 230000004048 modification Effects 0.000 abstract 1
- 238000012986 modification Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 47
- 238000005530 etching Methods 0.000 description 16
- 238000001514 detection method Methods 0.000 description 14
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 9
- 239000001301 oxygen Substances 0.000 description 9
- 229910052760 oxygen Inorganic materials 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 238000001020 plasma etching Methods 0.000 description 8
- 229910052814 silicon oxide Inorganic materials 0.000 description 8
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229920000642 polymer Polymers 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000002791 soaking Methods 0.000 description 5
- 238000002965 ELISA Methods 0.000 description 4
- 229920001503 Glucan Polymers 0.000 description 4
- 239000004793 Polystyrene Substances 0.000 description 4
- 102000001999 Transcription Factor Pit-1 Human genes 0.000 description 4
- 108010040742 Transcription Factor Pit-1 Proteins 0.000 description 4
- 239000012790 adhesive layer Substances 0.000 description 4
- 239000012670 alkaline solution Substances 0.000 description 4
- IJOOHPMOJXWVHK-UHFFFAOYSA-N chlorotrimethylsilane Chemical compound C[Si](C)(C)Cl IJOOHPMOJXWVHK-UHFFFAOYSA-N 0.000 description 4
- 229920002223 polystyrene Polymers 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 229920001661 Chitosan Polymers 0.000 description 3
- 238000000018 DNA microarray Methods 0.000 description 3
- BRLQWZUYTZBJKN-UHFFFAOYSA-N Epichlorohydrin Chemical compound ClCC1CO1 BRLQWZUYTZBJKN-UHFFFAOYSA-N 0.000 description 3
- 230000003321 amplification Effects 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- WBJINCZRORDGAQ-UHFFFAOYSA-N ethyl formate Chemical compound CCOC=O WBJINCZRORDGAQ-UHFFFAOYSA-N 0.000 description 3
- 238000003199 nucleic acid amplification method Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- OMEBWCFMNYDCFP-UHFFFAOYSA-N 1-sulfanylundecan-1-ol Chemical compound CCCCCCCCCCC(O)S OMEBWCFMNYDCFP-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 125000003700 epoxy group Chemical group 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 239000012046 mixed solvent Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000003752 polymerase chain reaction Methods 0.000 description 2
- 239000005051 trimethylchlorosilane Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- FPQQSJJWHUJYPU-UHFFFAOYSA-N 3-(dimethylamino)propyliminomethylidene-ethylazanium;chloride Chemical compound Cl.CCN=C=NCCCN(C)C FPQQSJJWHUJYPU-UHFFFAOYSA-N 0.000 description 1
- 102000015279 Basigin Human genes 0.000 description 1
- 108010064528 Basigin Proteins 0.000 description 1
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 1
- 102000004190 Enzymes Human genes 0.000 description 1
- 108090000790 Enzymes Proteins 0.000 description 1
- 102000010834 Extracellular Matrix Proteins Human genes 0.000 description 1
- 108010037362 Extracellular Matrix Proteins Proteins 0.000 description 1
- 102000005741 Metalloproteases Human genes 0.000 description 1
- 108010006035 Metalloproteases Proteins 0.000 description 1
- NQTADLQHYWFPDB-UHFFFAOYSA-N N-Hydroxysuccinimide Chemical compound ON1C(=O)CCC1=O NQTADLQHYWFPDB-UHFFFAOYSA-N 0.000 description 1
- 108091005461 Nucleic proteins Proteins 0.000 description 1
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229960001701 chloroform Drugs 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 210000002744 extracellular matrix Anatomy 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000002372 labelling Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 238000002331 protein detection Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
Images
Landscapes
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
Abstract
The utility model provides a plasmon enhancement fluorescence immunodetection chip, including the substrate, the preparation has periodic nanometer hole structure on the substrate, and the nanometer hole in the periodic nanometer hole structure is the matrix distribution, and the nanometer hole is the inverted pyramid form, and the deposit has metal adhesion layer on periodic nanometer hole structure, and the deposit has the metal enhancement layer on metal adhesion layer, and the modification has the macromolecule layer on the metal enhancement layer. The chip can be used for immunodetection, such as nucleic acid, protein, polypeptide and other biomolecules, and can remarkably improve the flux and sensitivity of immunodetection.
Description
Technical Field
The utility model belongs to the immunodetection field, concretely relates to plasmon enhancement fluorescence immunoassay chip and application thereof.
Background
Immunoassay is an indispensable means for biochemical detection as a means for detecting proteins. The current immunodetection technology is mostly based on enzyme-linked immunosorbent assay (ELISA) or a derivative technology of ELISA, and is characterized in that biological enzyme is used for marking protein antibodies to amplify signals. The immunoassay of the bio-enzyme labeling technology has a bottleneck in terms of detection flux due to the homogeneity of detection signals, namely, signal amplification and detection need to be carried out in a liquid phase, and the amount of samples required for detection increases with the increase of detection indexes. The protein biochip utilizes surface fluorescence signals to detect protein molecules, and due to the heterogeneous detection, namely, the fluorescence molecules emitting signals are adsorbed on the surface, the multi-index condition of a detection sample can be distinguished through a spatial position, but due to the lack of a signal amplification means in the heterogeneous detection of the protein biochip, the sensitivity is obviously insufficient. The main application of biochips on the market is also in the field of nucleic acid detection with PCR (polymerase chain reaction) amplification technology. In order to improve the flux of protein detection and simultaneously improve the detection sensitivity to meet most detection requirements, the combination of a fluorescence enhancement means based on heterogeneous detection and a protein chip is the key to solve the problems of flux and sensitivity.
Disclosure of Invention
Based on above-mentioned prior art, the utility model provides a plasmon enhancement fluorescence immunoassay chip and application thereof, this chip can be used to immunodetection, like biomolecules such as detectable nucleic acid, protein and polypeptide, can show flux and the sensitivity that improves immunodetection.
Realize the utility model discloses the technical scheme that above-mentioned purpose adopted does:
a plasmon enhanced fluorescence immunoassay chip comprises a substrate, wherein a periodic nanometer pit structure is prepared on the substrate, nanometer pits in the periodic nanometer pit structure are distributed in a matrix mode and are in an inverted pyramid shape, a metal adhesion layer is deposited on the periodic nanometer pit structure, a metal enhancement layer is deposited on the metal adhesion layer, and a macromolecule layer is modified on the metal enhancement layer.
The top surface of the nano pit is square, the side surface of the nano pit is isosceles triangle, the side length of the top surface of the nano pit is 300-1400nm, the ratio of the side length of the top surface of the nano pit to the depth of the nano pit is 1:1.3-1.5, and the period of the nano pit structure is 500-2000 nm.
The metal used for the metal adhesion layer is chromium or titanium, and the thickness of the metal adhesion layer is 5-30 nm.
The metal selected for the metal enhancement layer is gold or silver, and the thickness of the metal is 200-300 nm.
The thickness of the macromolecule layer is 10-100 nm.
Compared with the prior art, the invention has the beneficial effects and advantages that:
1. the chip of the invention is prepared with a special periodic nanometer pit structure, namely the nanometer pit is in an inverted pyramid shape, and the fluorescence signal can be enhanced by plasmon resonance in the special periodic nanometer pit structure and the metal layer on the nanometer pit structure, compared with other nanometer pits in common shapes, such as a cylinder shape, the fluorescence signal intensity is enhanced by about 35 times, thus the sensitivity of immunoassay can be greatly improved by adopting the special periodic nanometer pit structure.
2. The chip is used for detecting EMMPRIN protein (extracellular matrix metalloproteinase inducing factor), and compared with an ELISA technology, the detection sensitivity is improved by 26 times.
3. The preparation method of the chip is simple, the chip is manufactured by adopting the technologies of electron beam lithography, reactive ion etching, nano imprinting, physical vapor deposition and the like, the manufacturing process is simple and easy to operate, and the preparation cost is low.
Drawings
FIG. 1 is a schematic structural diagram of a plasmon enhanced fluorescence immunoassay chip.
Wherein, the substrate is 1-substrate, the nano-pit is 2-metal adhesion layer, the metal enhancement layer is 4-metal enhancement layer and the polymer layer is 5-polymer layer.
Detailed Description
The present invention will be described in detail with reference to the accompanying drawings.
The structure schematic diagram of the plasmon-enhanced fluorescence immunoassay chip provided in this embodiment is shown in fig. 1, and includes a substrate, in this embodiment, the substrate is a silicon substrate.
As shown in fig. 1, a periodic nano pit structure is prepared on a substrate 1, nano pits in the periodic nano pit structure are distributed in a matrix form, the period of the nano pit structure is 2000nm, a nano pit 2 is in an inverted pyramid shape, the top surface of the nano pit 2 is in a square form, the side surface is in an isosceles triangle form, the side length of the top surface of the nano pit 2 is 1400nm, and the depth of the nano pit 2 is 1900 nm.
And a metal adhesion layer 3 with the thickness of 30nm is deposited on the periodic nanometer pit structure, and the metal selected for the metal adhesion layer 3 is chromium.
A metal enhancement layer 4 with the thickness of 300nm is deposited on the metal adhesion layer 3, and the metal selected for the metal enhancement layer 4 is gold.
The metal enhancement layer 4 is modified with a polymer layer 5 with the thickness of 10nm, and the structural units of the polymer used in the polymer layer 5 are as follows:
The preparation method of the plasmon enhanced fluorescence immunoassay chip comprises the following steps:
1. taking a silicon substrate A (purchased commercially) with a silicon oxide layer with the thickness of 300nm, spinning and coating an electron beam photoresist layer (adopting PMMA photoresist) with the thickness of 200nm on the silicon oxide layer, processing a matrix formed by periodically arranging cylindrical grooves on the electron beam photoresist layer by using an electron beam exposure method, wherein the period of the periodic cylindrical groove matrix is 2000nm, the diameter of each cylindrical groove is 1400nm, the depth of each cylindrical groove is 200nm, and developing to expose the silicon oxide layer at the bottom of each cylindrical groove;
2. putting the silicon substrate A processed in the step 1 into reactive ion etching equipment, introducing trifluoromethane gas into the reactive ion etching equipment, and etching the substrate A processed in the step 1, wherein the etching conditions are as follows: the flow rate of trifluoromethane is 300sccm, the gas pressure is 1.6Pa, the radio frequency power is 150W, and the etching time is 250 s; then, replacing trifluoromethane as oxygen, introducing oxygen into the reactive ion etching equipment for etching again, wherein the etching conditions are as follows: the oxygen flow is 100sccm, the gas pressure is 1Pa, the radio frequency power is 100W, and the etching time is 60 s; after etching, taking out the etched substrate A, dropwise adding 0.5mL of trimethylchlorosilane into a vessel, placing the etched substrate A in the vessel without contacting with the trimethylchlorosilane, sealing the vessel and standing for 30min, taking out the substrate A subjected to standing treatment, cleaning with ethanol and drying to obtain a nano-imprint template;
3. carrying out nano imprinting on the nano imprinting template by using a polystyrene film, wherein the pressure of the nano imprinting is 40bar, the temperature is 150 ℃, and the periodic cylindrical groove matrix is transferred to the polystyrene film to obtain a periodic cylindrical protrusion matrix on the polystyrene film;
4. taking a silicon substrate B with a silicon oxide layer with the thickness of 100nm, spin-coating an ultraviolet nano-imprinting adhesive layer with the thickness of 200nm on the silicon oxide layer, attaching one surface of a polystyrene film, which is printed with a periodic cylindrical convex matrix, to the ultraviolet nano-imprinting adhesive layer, carrying out nano-imprinting again, wherein the pressure of the nano-imprinting is 30bar, the temperature is 65 ℃, and the periodic cylindrical convex matrix is transferred to the ultraviolet nano-imprinting adhesive layer to obtain a periodic cylindrical groove matrix on the ultraviolet nano-imprinting adhesive layer;
5. putting the substrate B processed in the step 4 into reactive ion etching equipment, introducing oxygen into the reactive ion etching equipment, etching off the residual ultraviolet nano imprint glue at the bottom of each cylindrical groove, and exposing the silicon oxide layer at the bottom of each cylindrical groove, wherein the etching conditions are as follows: the oxygen flow is 100sccm, the gas pressure is 1Pa, the radio frequency power is 50W, and the etching time is 30 s; then changing oxygen into trifluoromethane, introducing the trifluoromethane into the reactive ion etching equipment for etching again to completely etch the silicon oxide layer exposed at the bottom of each cylindrical groove and expose silicon at the bottom of each cylindrical groove, wherein the etching conditions are as follows: the flow rate of trifluoromethane is 300sccm, the gas pressure is 1.6Pa, the radio frequency power is 150W, and the etching time is 250 s; and finally, replacing trichloromethane as oxygen, introducing oxygen into the reactive ion etching equipment, etching the residual ultraviolet nano imprinting glue to obtain a substrate to be processed, wherein the etching conditions are as follows: the oxygen flow is 100sccm, the gas pressure is 1Pa, the radio frequency power is 100W, and the etching time is 60 s;
6. corroding the substrate to be treated for 15min by using a potassium hydroxide solution with the mass percentage concentration of 28.6%, controlling the size of the inverted pyramid-shaped nano pit by controlling the corrosion time, preparing a periodic nano pit structure on the substrate B, and removing residual silicon oxide by using hydrofluoric acid to obtain a periodic nano pit structure substrate;
7. depositing a metal adhesion layer (chromium is selected as metal) with the thickness of 30nm on the periodic nanometer pit structure substrate by adopting a physical vapor deposition method, and then depositing a metal enhancement layer (gold is selected as metal) with the thickness of 300nm on the metal adhesion layer to obtain the periodic metal nanometer pit structure substrate;
8. coupling and modifying a macromolecule layer on a periodic metal nano pit structure substrate:
8.1, uniformly mixing ethanol and water according to the volume ratio of the ethanol to the water of 4:1 to obtain a mixed solvent, adding mercaptoundecanol into the mixed solvent to prepare a mixed solution containing 10mmol/L mercaptoundecanol, soaking the periodic metal nano-pit structure substrate into the mixed solution for 12 hours to enable a coupling hydroxyl-based layer on the metal enhancement layer;
8.2, adding epichlorohydrin into 0.2mol/L sodium hydroxide solution to prepare 0.2mol/L epichlorohydrin alkaline solution, soaking the periodic metal nano pit structure substrate treated by 8.1 into the epichlorohydrin alkaline solution for 4 hours, activating a hydroxyl layer into an epoxy group layer, and soaking the periodic metal nano pit structure substrate containing the epoxy group layer into 0.3g/mL glucan solution or chitosan solution for 20 hours to obtain the periodic metal nano pit structure substrate with a glucan layer or chitosan layer with the thickness of 10 nm;
8.3, adding bromoacetic acid into 2mol/L NaOH solution to prepare 0.1mol/L bromoacetic acid alkaline solution, soaking the periodic metal nano-pit structure substrate treated by 8.3 into the bromoacetic acid alkaline solution for 12 hours, and modifying the glucan layer or the chitosan layer into a carboxylated glucan layer;
8.4 soaking the periodic metal nano pit structure substrate treated in the step 8.3 into an aqueous solution containing 0.1mol/L of N-hydroxysuccinimide and 0.1mol/L of (1- (3-dimethylaminopropyl) -3-ethylcarbodiimide hydrochloride) for 1 hour.
Claims (5)
1. The utility model provides a plasmon enhancement fluorescence immunoassay chip, includes the substrate, its characterized in that: the periodic nanometer pit structure is prepared on the substrate, nanometer pits in the periodic nanometer pit structure are distributed in a matrix mode, the nanometer pits are in an inverted pyramid shape, a metal adhesion layer is deposited on the periodic nanometer pit structure, a metal enhancement layer is deposited on the metal adhesion layer, and a macromolecule layer is modified on the metal enhancement layer.
2. The plasmon-enhanced fluorescence immunoassay chip of claim 1, wherein: the top surface of the nano pit is square, the side surface of the nano pit is isosceles triangle, the side length of the top surface of the nano pit is 300-1400nm, the ratio of the side length of the top surface of the nano pit to the depth of the nano pit is 1:1.3-1.5, and the period of the nano pit structure is 500-2000 nm.
3. The plasmon-enhanced fluorescence immunoassay chip of claim 1, wherein: the metal used for the metal adhesion layer is chromium or titanium, and the thickness of the metal adhesion layer is 5-30 nm.
4. The plasmon-enhanced fluorescence immunoassay chip of claim 1, wherein: the metal selected for the metal enhancement layer is gold or silver, and the thickness of the metal is 200-300 nm.
5. The plasmon-enhanced fluorescence immunoassay chip of claim 1, wherein: the thickness of the macromolecule layer is 10-100 nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020994416.0U CN212722901U (en) | 2020-06-03 | 2020-06-03 | Plasmon enhanced fluorescence immunoassay chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020994416.0U CN212722901U (en) | 2020-06-03 | 2020-06-03 | Plasmon enhanced fluorescence immunoassay chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN212722901U true CN212722901U (en) | 2021-03-16 |
Family
ID=74949591
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202020994416.0U Active CN212722901U (en) | 2020-06-03 | 2020-06-03 | Plasmon enhanced fluorescence immunoassay chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN212722901U (en) |
-
2020
- 2020-06-03 CN CN202020994416.0U patent/CN212722901U/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN111610323A (en) | Plasmon enhanced fluorescence immunoassay chip and application thereof | |
| Christman et al. | Nanopatterning proteins and peptides | |
| Xue et al. | Dark-to-bright optical responses of liquid crystals supported on solid surfaces decorated with proteins | |
| CN101144809B (en) | Method for manufacturing high-sensitivity nano biosensor | |
| Kang et al. | Protein capture in silica nanotube membrane 3-D microwell arrays | |
| KR101102454B1 (en) | Biochip with Metal-Protein Grating Pattern and Method for Preparing Thereof | |
| CN103991837A (en) | Micro-nano orderly through-hole array metal film sensor based on piezoelectric substrate sheet and manufacturing method thereof | |
| CN113189181B (en) | Single-cell protein quantitative analysis method based on electrophoresis technology | |
| JP4462568B2 (en) | Real-time pathogenic microorganism detection method using modified flow type surface plasmon resonance biosensor | |
| JP2007271609A (en) | Biosensor | |
| CN212722901U (en) | Plasmon enhanced fluorescence immunoassay chip | |
| WO2022142511A1 (en) | Manufacturing method for 3d microelectrode | |
| JP4768417B2 (en) | Biosensor | |
| CN102393453B (en) | Magnetically-labeled biological sensor as well as production method and detection method thereof | |
| CN109507422A (en) | Optics micro-fluidic chip based on polymer and multiple layer metal Nanoparticle Modified | |
| Peng et al. | Study on enzyme linked immunosorbent assay using paper-based micro-zone plates | |
| Lu et al. | Fabrication of Ag nanorods on micropost array for a metal-enhanced fluorescence substrate with a high signal-to-background ratio | |
| CN215963614U (en) | Immunodetection chip | |
| TWI470224B (en) | Detecting system and detecting method | |
| Hu et al. | Advances in flexible graphene field-effect transistors for biomolecule sensing | |
| US20120202972A1 (en) | Motor proteins propelling nano-scale devices and systems | |
| CN112547147B (en) | Immunodetection chip and preparation method thereof | |
| CN101693514A (en) | Method for preparing magnetic suspended coding micro-block array chips and method for applying the preparation method | |
| WO2011065398A1 (en) | Optical sensor and manufacturing method therefor | |
| CN112611861B (en) | Fluorescent immunodetection chip and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20210602 Address after: No. 22-65, Wuchang Street, Zhongshan District, Dalian, Liaoning 116000 Patentee after: Liu Yang Address before: 430073 k061, floor 2, building 5, west of Guanggu 1st Road and north of Nanhu Avenue, Donghu New Technology Development Zone, Wuhan City, Hubei Province Patentee before: Wuhan century Kangmin Biotechnology Co.,Ltd. |
|
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20210723 Address after: 100000 Room 408, 4th floor, building 5, courtyard 13, cuihunan Ring Road, Haidian District, Beijing Patentee after: Beijing Kangmin Biotechnology Co.,Ltd. Address before: No. 22-65, Wuchang Street, Zhongshan District, Dalian, Liaoning 116000 Patentee before: Liu Yang |
|
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20221130 Address after: Room 401, Room 01, Floor 4, Building B9, Phase I, Block B, Wuhan Hi tech Medical Equipment Park, No. 818, High tech Avenue, Donghu New Technology Development Zone, Wuhan City, 430206, Hubei Province (Wuhan Area, Free Trade Zone) Patentee after: Wuhan century Kangmin Biotechnology Co.,Ltd. Address before: 100000 Room 408, 4th floor, building 5, courtyard 13, cuihunan Ring Road, Haidian District, Beijing Patentee before: Beijing Kangmin Biotechnology Co.,Ltd. |
|
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20240808 Address after: No. 1, 1st Floor, Building 3, No. 198 Peninsula Middle Road, Dipu Street, Anji County, Huzhou City, Zhejiang Province (self declared) Patentee after: Anji Century Kangmin Biotechnology Co.,Ltd. Country or region after: China Address before: Room 401, Room 01, Floor 4, Building B9, Phase I, Block B, Wuhan Hi tech Medical Equipment Park, No. 818, High tech Avenue, Donghu New Technology Development Zone, Wuhan City, 430206, Hubei Province (Wuhan Area, Free Trade Zone) Patentee before: Wuhan century Kangmin Biotechnology Co.,Ltd. Country or region before: China |