CN212648259U - Heterojunction solar cell and photovoltaic module - Google Patents
Heterojunction solar cell and photovoltaic module Download PDFInfo
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- CN212648259U CN212648259U CN202021774773.2U CN202021774773U CN212648259U CN 212648259 U CN212648259 U CN 212648259U CN 202021774773 U CN202021774773 U CN 202021774773U CN 212648259 U CN212648259 U CN 212648259U
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Abstract
The utility model provides a heterojunction solar cell and a photovoltaic module, wherein the side surface of a related monocrystalline silicon substrate is wrapped by a first intrinsic amorphous layer of a first structural film, thus effectively improving the passivation effect of the surface of the monocrystalline silicon substrate; in addition, based on the structure of heterojunction solar cell, when specifically carrying out the preparation of four layers of amorphous silicon layer in first structural film and the second structural film, can avoid the turn-over action to the monocrystalline silicon substrate through selecting for use the support plate of setting for the structure, can avoid leading the problem that the pollution caused the battery electrical property to descend because of the turn-over action among the prior art, still can shorten the production cycle of heterojunction solar cell.
Description
Technical Field
The utility model relates to a photovoltaic field of making especially relates to a heterojunction solar cell and photovoltaic module.
Background
The heterojunction solar cell is a relatively high-efficiency crystalline silicon solar cell at present, combines the characteristics of a crystalline silicon cell and a silicon-based thin film cell, and has the advantages of short manufacturing process, low process temperature, high conversion efficiency, more generated energy and the like. Fig. 1 is a schematic structural diagram of a heterojunction solar cell in the prior art, which sequentially includes, from top to bottom, a first collector electrode 51 ', a first transparent conductive film 41 ', a first doped amorphous layer 31 ', a first intrinsic amorphous layer 21 ', a single crystal silicon substrate 10 ', a second intrinsic amorphous layer 22 ', a second doped amorphous layer 32 ', a second transparent conductive film 42 ', and a second collector electrode 52 '.
In the specific manufacturing process of the heterojunction solar cell in the prior art, the manufacturing of four amorphous silicon layers, namely a first intrinsic amorphous layer 21 ', a second intrinsic amorphous layer 22 ', a first doped amorphous layer 31 ' and a second doped amorphous layer 32 ', on two surfaces of a monocrystalline silicon substrate 10 ' is generally completed through a PECVD process; then, the first transparent conductive film layer 41 'and the second transparent conductive film layer 42' are manufactured by the PVD process; finally, the first collector electrode 51 'and the second collector electrode 52' are manufactured by a screen printing process.
The carrier 600 ' with the structure shown in fig. 2 is required to be specifically manufactured by four layers of amorphous silicon layers, and the carrier 600 ' is provided with a groove matched with the monocrystalline silicon substrate 10 ' in size. Specifically, when the four amorphous silicon layers are manufactured, the monocrystalline silicon substrate 10 ' is placed in the groove of the carrier 600 ', and a first intrinsic amorphous layer 21 ' and a first doped amorphous layer 31 ' are sequentially deposited on one surface of the monocrystalline silicon substrate 10 ' by PECVD; then, the single crystal silicon substrate 10 'is turned over by a manipulator or the like, and then a second intrinsic amorphous layer 22' and a second doped amorphous layer 32 'are sequentially deposited on the other surface of the single crystal silicon substrate 10' by PECVD, thereby completing the preparation of the four amorphous silicon layers.
However, the heterojunction solar cell and the manufacturing method thereof related to the prior art have the following problems: the edge region of the single-crystal silicon substrate 10' is insufficiently passivated; in the manufacturing process of the four-layer amorphous silicon layer, the monocrystalline silicon substrate 10' needs to be turned over, so that the electrical property of the battery is reduced due to pollution, and the production period of the battery is prolonged; during the fabrication of the first doped amorphous layer 31 ', free radical drift in the PECVD chamber may cause the edge of the un-deposited side of the single crystal silicon substrate 10' to be contaminated by doped atoms, reducing the passivation performance of the interface between the single crystal silicon substrate 10 'and the second intrinsic amorphous layer 22'.
In view of the above, there is a need to provide an improved solution to the above problems.
SUMMERY OF THE UTILITY MODEL
The utility model discloses aim at solving one of the technical problem that prior art exists at least, for realizing the utility model purpose of the aforesaid, the utility model provides a heterojunction solar cell, its concrete design as follows.
A heterojunction solar cell, comprising:
the single crystal silicon substrate is provided with a first main surface and a second main surface which are arranged oppositely, and a side surface connecting the first main surface and the second main surface, wherein the second main surface comprises a middle area and an edge area which is arranged around the middle area;
the first structural film covers the first main surface and the side surface of the monocrystalline silicon substrate and points to the direction of the first structural film from the monocrystalline silicon substrate, and the first structural film comprises a first intrinsic amorphous layer, a first doped amorphous layer and a first transparent conductive film layer which are sequentially stacked;
a first collector electrode on a surface of the first structural film on a side away from the single-crystal silicon substrate;
the second structural film is positioned in the middle area of the second main surface of the monocrystalline silicon substrate and points to the direction of the second structural film from the monocrystalline silicon substrate, and the second structural film comprises a second intrinsic amorphous layer, a second doped amorphous layer with the doping type opposite to that of the first doped amorphous layer and a second transparent conductive film layer which are sequentially stacked;
and the second collector electrode is positioned on the surface of one side, away from the monocrystalline silicon substrate, of the second structural film.
Further, the first structural film extends to the second principal surface side of the single-crystal silicon substrate and blocks a part of the edge region.
Further, in the second structural film, edges of the second doped amorphous layer and the second transparent conductive film layer are connected to the second main surface of the monocrystalline silicon substrate.
Further, the width dimension of the edge area is 0.1-1.0 mm.
Further, the width dimension of the edge area is 0.2-0.8 mm.
Further, the first main surface of the single crystal silicon substrate is a light receiving surface, and the second main surface is a backlight surface.
Further, the monocrystalline silicon substrate is n-type monocrystalline silicon, the first doped amorphous layer is n-type doped amorphous silicon, and the second doped amorphous layer is p-type doped amorphous silicon.
Further, the sum of the thicknesses of the first intrinsic amorphous layer and the first doped amorphous layer on the first main surface is less than or equal to the sum of the thicknesses of the second intrinsic amorphous layer and the second doped amorphous layer.
Further, the thickness of the first intrinsic amorphous layer on the first main surface is smaller than or equal to the thickness of the second intrinsic amorphous layer.
Further, the first intrinsic amorphous layer and the second intrinsic amorphous layer respectively comprise at least two layers of intrinsic films which are arranged in a stacked mode, and each intrinsic film is composed of one of an intrinsic amorphous silicon film, an intrinsic amorphous silicon oxide film and an intrinsic amorphous silicon carbide film.
Further, one layer of the intrinsic film, which is farthest from the single crystal silicon substrate, of the first intrinsic amorphous layer and/or the second intrinsic amorphous layer is an intrinsic amorphous silicon oxide film.
Further, the thickness of the first transparent conductive film layer is smaller than or equal to the thickness of the second transparent conductive film layer.
Further, in a direction from the backlight surface to the light receiving surface, the first doped amorphous layer sequentially includes a first doped amorphous silicon film and a doped amorphous silicon oxide film, a doped amorphous silicon carbide film or a doped amorphous silicon carbide/doped amorphous silicon oxide composite film on the surface of the first doped amorphous silicon film.
Further, the first doped amorphous layer further comprises a second doped amorphous silicon film located on the surface of the doped amorphous silicon oxide film, the doped amorphous silicon carbide film or the doped amorphous silicon carbide/doped amorphous silicon oxide composite film.
Further, in a direction from the light receiving surface to the backlight surface, the second doped amorphous layer sequentially includes a third doped amorphous silicon film and a fourth doped amorphous silicon film located on the surface of the third doped amorphous silicon film and having a doping concentration greater than that of the third doped amorphous silicon film.
The utility model also provides a photovoltaic module, this photovoltaic module has above heterojunction solar cell.
The utility model has the advantages that: in the heterojunction solar cell structure provided by the utility model, the side surface of the monocrystalline silicon substrate is wrapped by the first intrinsic amorphous layer of the first structural film, so that the passivation effect of the surface of the monocrystalline silicon substrate can be effectively improved; in addition, based on the structure of heterojunction solar cell, when specifically carrying out the preparation of four layers of amorphous silicon layer in first structural film and the second structural film, can avoid the turn-over action to the monocrystalline silicon substrate through selecting for use the support plate of setting for the structure, can avoid leading the problem that the pollution caused the battery electrical property to descend because of the turn-over action among the prior art, still can shorten the production cycle of heterojunction solar cell.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required to be used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
FIG. 1 is a schematic diagram of a prior art heterojunction solar cell;
FIG. 2 is a schematic diagram showing a state of a prior art heterojunction solar cell with four amorphous silicon layers;
fig. 3 is a schematic diagram of a first embodiment of the heterojunction solar cell of the present invention;
fig. 4 is a schematic diagram of a second embodiment of the heterojunction solar cell of the present invention;
fig. 5 is a schematic diagram of a third embodiment of the heterojunction solar cell of the present invention;
fig. 6 is a schematic diagram illustrating a fourth embodiment of the heterojunction solar cell of the present invention;
fig. 7 is a schematic view of a partial structure of the heterojunction solar cell of the present invention;
fig. 8 is a schematic view of another partial structure of the heterojunction solar cell of the present invention;
fig. 9 is a schematic view of another partial structure of the heterojunction solar cell of the present invention;
fig. 10 is a schematic view illustrating a manufacturing process of the heterojunction solar cell of the present invention.
In the figure, 10 is a single crystal silicon substrate, 21 is a first intrinsic amorphous layer, 31 is a first doped amorphous layer, 41 is a first conductive film layer, 51 is a first current collector, 22 is a second intrinsic amorphous layer, 32 is a second doped amorphous layer, 42 is a second conductive film layer, 52 is a second current collector, 201 is a first side passivation portion, 202 is a second side passivation portion, 210 is an intrinsic side portion, 211 is a first intrinsic film, 212 is a second intrinsic film, 213 is a third intrinsic film, 221 is a fourth intrinsic film, 222 is a fifth intrinsic film, 223 is a sixth intrinsic film, 310 is a doped side portion, 301 is a first doped amorphous silicon film, 302 is a doped amorphous silicon oxide film, a doped amorphous silicon carbide film or a doped amorphous silicon carbide/doped amorphous silicon oxide composite film, 303 is a second doped amorphous silicon film 304 is a third doped amorphous silicon film, 305 is a fourth doped amorphous silicon film, 410 is a conductive layer side portion, 60 is a through hole, 61 is a carrying part, and 600 is a first carrier.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
Referring to fig. 3, the heterojunction solar cell according to the present invention includes a single crystal silicon substrate 10, a first structural film, a first collector electrode 51, a second structural film, and a second collector electrode 52.
In the present invention, the single crystal silicon substrate 10 has a first main surface and a second main surface which are arranged opposite to each other and a side surface which connects the first main surface and the second main surface, and the second main surface includes a middle region and an edge region which is arranged around the middle region. The thickness of the single crystal silicon substrate 10 is usually 120-180 μm, and the resistivity is usually 0.7-3.5. omega. cm. As shown in fig. 3, the first main surface refers to the upper surface of the single-crystal silicon substrate 10, and the second main surface refers to the lower surface of the single-crystal silicon substrate 10.
The utility model provides a first structural film covers monocrystalline silicon substrate 10's first principal plane and side, by monocrystalline silicon substrate 10 directional first structural film's direction on, first structural film is including the first intrinsic amorphous layer 21, the first doping amorphous layer 31 and the first transparent conductive film layer 41 that stack gradually the setting.
More specifically referring to fig. 3, in this embodiment, a first intrinsic amorphous layer 21 covers the first main face and the side faces of the single-crystal silicon substrate 10; the first doped amorphous layer 31 is located on the surface of the first intrinsic amorphous layer 21 on the side away from the single crystal silicon substrate 10 and forms a cover for the first intrinsic amorphous layer 21; the first transparent conductive film layer 41 is located on a surface of the first doped amorphous layer 31 on a side facing away from the first intrinsic amorphous layer 21 and covers the first doped amorphous layer 31.
As shown in fig. 3, a portion of the first intrinsic amorphous layer 21 located at the side of the single crystal silicon substrate 10 is an intrinsic layer side portion 210. It is understood that in the present invention, the covering of the first doped amorphous layer 31 to the first intrinsic amorphous layer 21 and the covering of the first doped amorphous layer 31 by the first transparent conductive film layer 41 refer to: the first doped amorphous layer 31 and the first transparent conductive film layer 41 each have a portion located outside the side of the single crystal silicon substrate 10 and disposed corresponding to the side portion 210 of the intrinsic layer. That is, as shown in fig. 3, the first doped amorphous layer 31 has a doped layer side portion 310 that overlaps the intrinsic layer side portion 210, and the first transparent conductive film layer 41 has a conductive layer side portion 410 that overlaps the doped layer side portion 310.
In the present invention, the first collector electrode 51 is located on a side surface of the first structural film facing away from the single crystal silicon substrate 10. In this embodiment, the first collector electrode 51 is located on a surface of the first transparent conductive film 41 facing away from the first doped amorphous layer 31.
The utility model provides a second structural film is located the middle zone of monocrystalline silicon substrate 10 second main face, and by the directional second structural film's of monocrystalline silicon substrate 10 direction on, second structural film is including the intrinsic amorphous layer 22 of second, the second of range upon range of setting in proper order adulterate amorphous layer 32 and the transparent conductive film layer 42 of second.
More specifically, as shown in fig. 3, the second intrinsic amorphous layer 22 in the present invention is located in the middle region of the second main surface of the single-crystal silicon substrate 10; a second doped amorphous layer 32 is located on a surface of the second intrinsic amorphous layer 22 on a side facing away from the single crystal silicon substrate 10; the second transparent conductive film layer 42 is located on a side surface of the second doped amorphous layer 32 facing away from the second intrinsic amorphous layer 22.
In the present invention, the second collector 52 is located on a side surface of the second structural film facing away from the single crystal silicon substrate 10. In this embodiment, the second collector electrode 52 is located on a surface of the second transparent conductive film 42 facing away from the second doped amorphous layer 32.
In a specific implementation, the doping type of the second doped amorphous layer 32 is opposite to the doping type of the first doped amorphous layer 31. In the specific implementation process, the first doped amorphous layer 31 is one of an N-type doped amorphous layer and a P-type doped amorphous layer, and the second doped amorphous layer 32 is the other of the N-type doped amorphous layer and the P-type doped amorphous layer. Specifically, the N-type doped amorphous layer is doped with phosphorus, and the P-type doped amorphous layer is doped with boron.
The utility model provides an among the heterojunction solar cell structure, monocrystalline silicon substrate 10's in the first structural film side is wrapped up by first intrinsic amorphous layer 21, can effectively improve the passivation effect on monocrystalline silicon substrate 10 surface.
For better understanding the utility model discloses, the utility model also provides a heterojunction solar cell's manufacturing method, this method is used for making heterojunction solar cell as above, and it is shown in combination with fig. 10, and it includes:
providing a monocrystalline silicon substrate, placing the monocrystalline silicon substrate 10 on a first carrier 600 with a first main surface facing upwards, wherein the first carrier 600 comprises a body and a through hole 60 formed in the body, a bearing part 61 for bearing the monocrystalline silicon substrate 10 and shielding the edge of a second main surface of the monocrystalline silicon substrate 10 is arranged in the through hole 60, and the side length of the through hole 60 positioned in the upper side area of the bearing part 61 is greater than the corresponding side length of the monocrystalline silicon substrate 10;
manufacturing an amorphous silicon layer, sequentially depositing a first intrinsic amorphous layer 21 and a first doped amorphous layer 31 on the first main surface side of the monocrystalline silicon substrate 10, and sequentially depositing a second intrinsic amorphous layer 22 and a second doped amorphous layer 32 on the second main surface side of the monocrystalline silicon substrate 10;
manufacturing a transparent conductive film layer, placing the monocrystalline silicon substrate 10 with the amorphous silicon layer with the first main surface facing upwards on the second carrier 700, and depositing a first transparent conductive film layer 41 and a second transparent conductive film layer 42 from the upper side and the lower side of the second carrier 700 respectively, so that it can be understood that the second carrier 700 has the same structure as the first carrier 600;
a collector electrode (not shown) is formed, a first collector electrode 51 is formed on the surface of the first transparent conductive film layer 41 facing away from the first doped amorphous layer 31, and a second collector electrode 52 is formed on the surface of the second transparent conductive film layer 42 facing away from the second doped amorphous layer 32.
In the heterojunction solar cell prepared by the above method, the first intrinsic amorphous layer 21, the first doped amorphous layer 31 and the first transparent conductive film layer 41 constitute a first structural film, and the second intrinsic amorphous layer 22, the second doped amorphous layer 32 and the second transparent conductive film layer 42 constitute a second structural film.
In the present invention, since the size of the through hole 60 located in the upper side region of the supporting portion 61 is larger than the size of the single crystal silicon substrate 10, the first intrinsic amorphous layer 21 and the first doped amorphous layer 31 can extend to one side of the single crystal silicon substrate 10 during the formation process to form the lateral portion 210 of the intrinsic layer and the lateral portion 310 of the doped layer respectively; accordingly, since the second carrier 700 has the same structure as the first carrier 600, the first transparent conductive film 41 also extends to the side of the single crystal silicon substrate 10 to form the side portion 410 of the conductive layer.
It is understood that the region of the second main surface of the single crystal silicon substrate 10 blocked by the carrier 61, i.e. the edge region constituting the second main surface, can limit the second intrinsic amorphous layer 22 and the second doped amorphous layer 32 in the middle region of the second main surface due to the blocking of the edge region of the second main surface of the single crystal silicon substrate 10 by the carrier 61; correspondingly, the second carrier 700 may also define the second transparent conductive film layer 42 in the middle region of the second main surface.
In the specific implementation process, the present invention relates to a first intrinsic amorphous layer 21, a second intrinsic amorphous layer 22, a first doped amorphous layer 31, a second doped amorphous layer 32, and four amorphous silicon layers, which are formed by PECVD deposition, and the fabrication sequence of the four amorphous silicon layers can be properly adjusted according to the requirement. The first transparent conductive film layer 41 and the second transparent conductive film layer 42 involved in the present invention are formed by PVD deposition. The first collector electrode 51 and the second collector electrode 52 according to the present invention are formed by screen printing.
Just because the four amorphous silicon layers are different from the first transparent conductive film layer 41 and the second transparent conductive film layer 42 in the forming process, in the specific implementation, the first carrier 600 applied to the four amorphous silicon layers and the second carrier 700 applied to the first transparent conductive film layer 41 and the second transparent conductive film layer 42 are different carriers.
Based on the structure of heterojunction solar cell, when specifically carrying out the preparation of four layers of amorphous silicon layers, can avoid the turn-over action through selecting for use the first support plate 600 that has the structure related in this embodiment, can avoid leading to the problem that the pollution caused the battery electrical property to descend because of the turn-over action among the prior art, still can shorten heterojunction solar cell's production cycle.
In the specific fabrication of the heterojunction solar cell, it is preferable that the deposition forming operation of the first intrinsic amorphous layer 21 and the second intrinsic amorphous layer 22 is performed prior to the deposition forming operation of the first doped amorphous layer 31 and the second doped amorphous layer 32 in the step of fabricating the amorphous silicon layer. Thus, the first intrinsic amorphous layer 21 and the second intrinsic amorphous layer 22 are ensured to have the optimal passivation effect on the two side surfaces of the monocrystalline silicon substrate 10, and the problem that the one side surface of the monocrystalline silicon substrate is contaminated by the doped atoms due to the limitation of the process flow in the prior art can be avoided.
In some embodiments of the present invention, the first structural film extends to the second major surface side of the single crystal silicon substrate 10 and blocks a portion of the edge region. As shown in fig. 4 in particular, the first intrinsic amorphous layer 21, the first doped amorphous layer 31 and the first transparent conductive film layer 41 all extend to the second principal surface side of the single crystal silicon substrate 10 and block a part of the edge area. Referring to fig. 4, the first intrinsic amorphous layer 21 has a first intrinsic cladding portion 210a extending to the second main surface side of the single crystal silicon substrate 10 and blocking a portion of the edge region, and the first doped amorphous layer 31 and the first transparent conductive film layer 41 have a first doped cladding portion 310a and a first conductive cladding portion 410a corresponding to the first intrinsic cladding portion 210a, respectively. In this embodiment, the first structural film only covers a part of the edge region, so as to prevent the first transparent conductive film layer 41 and the second transparent conductive film layer 42 from being conducted.
Particularly for the embodiment shown in fig. 4, the heterojunction cell sheet with the structure is formed because: the edge of the carrier (e.g., the carrier 61 of the first carrier 600) of the carrier is tightly fitted with the second main surface of the single crystal silicon substrate 10, the single crystal silicon substrate 10 is warped due to gravity, a gap is formed between the edge of the single crystal silicon substrate 10 and the carrier (including the first carrier 600 and the second carrier 700), and the first intrinsic amorphous layer 21, the first doped amorphous layer 31 and the first transparent conductive film 41 are formed to be wound and plated on the edge area of the second main surface of the single crystal silicon substrate 10 from the gap, thereby forming the first intrinsic winding and plating part 210a, the first doped winding and plating part 310a and the first conductive winding and plating part 410a, respectively.
In other embodiments of the present invention, the edges of the second doped amorphous layer 32 and the second transparent conductive film layer 42 are both connected to the second main surface of the single crystal silicon substrate 10. Referring to fig. 5, the second doped amorphous layer 32 has a second doped wraparound plating part 320 connected to the second main surface of the single-crystal silicon substrate 10 around the edge of the second intrinsic amorphous layer 22, and the second transparent conductive film layer 42 has a second conductive wraparound plating part 420 connected to the second main surface of the single-crystal silicon substrate 10 around the edge of the second intrinsic amorphous layer 22.
Particularly for the embodiment shown in fig. 5, the heterojunction cell sheet with the structure is formed because: the edge of the single crystal silicon substrate 10 and the carrier of the carrier (e.g. the carrier 61 of the first carrier 600) are closely matched, when the first intrinsic amorphous layer 21, the first doped amorphous layer 31 and the first transparent conductive film 41 are formed on the single crystal silicon substrate 10, the single crystal silicon substrate 10 is deformed (upwardly arched) in the direction facing the normal direction of the first main surface by the tension of each layer, so that a certain gap is formed between the edge of the carrier (e.g. the carrier 61 of the first carrier 600) and the single crystal silicon substrate 10, and the second doped amorphous layer 32 and the second transparent conductive film 42 are manufactured to form the second doped winding part 320 and the second conductive winding part 420 connected to the second main surface of the single crystal silicon substrate 10 through the gap, respectively.
It will be understood, of course, that in some embodiments of the present invention, a heterojunction solar cell having the structure shown in fig. 6 may also be present, i.e., the first intrinsic amorphous layer 21, the first doped amorphous layer 31 and the first transparent conductive film 41 all extend to the second main surface side of the monocrystalline silicon substrate 10 and block a part of the edge region, and the edges of the second doped amorphous layer 32 and the second transparent conductive film 42 are also connected to the second main surface of the monocrystalline silicon substrate 10. The reason for producing the heterojunction solar cell is as follows: the matching relationship between the single crystal silicon substrate 10 and the carrying portion of the carrier (e.g. the carrying portion 61 of the first carrier 600) is affected by gravity and film tension, and it can be specifically combined with the description of the structure in fig. 4 and 5, which is not repeated herein.
In the present invention, as shown in fig. 3, the width d of the second main surface edge region of the single crystal silicon substrate 10 is 0.1 to 1.0 mm. Preferably, the width dimension d of the edge region is 0.2-0.8 mm. Further, the width dimension d of the edge area is 0.3-0.5 mm.
In a preferred embodiment of the present invention, the first main surface of the single crystal silicon substrate 10 is a light receiving surface, and the second main surface is a backlight surface.
Although the single crystal silicon substrate 10 may specifically be a p-type single crystal silicon substrate, an n-type single crystal substrate silicon may also be selected; however, in a preferred embodiment of the present invention, the single crystal silicon substrate 10 is an n-type single crystal silicon substrate. Further preferably, the first doped amorphous layer 31 is n-type doped amorphous silicon, and the second doped amorphous layer 32 is p-type doped amorphous silicon.
In some embodiments, the sum of the thicknesses of the first intrinsic amorphous layer 21 and the first doped amorphous layer 31 on the first major surface is less than or equal to the sum of the thicknesses of the second intrinsic amorphous layer 22 and the second doped amorphous layer 32. Wherein the sum of the thicknesses of the first intrinsic amorphous layer 21 and the first doped amorphous layer 31 at the first main surface is preferably smaller than the sum of the thicknesses of the second intrinsic amorphous layer 22 and the second doped amorphous layer 32.
For the heterojunction solar cell, the influence of the light absorption effect of the light receiving surface on the photoelectric conversion efficiency of the cell is far larger than the influence of the light absorption effect of the backlight surface on the photoelectric conversion efficiency of the cell, and because the sum of the thicknesses of the first intrinsic amorphous layer 21 and the first doped amorphous layer 31 on the first main surface is less than or equal to the sum of the thicknesses of the second intrinsic amorphous layer 22 and the second doped amorphous layer 32, the loss of sunlight when the sunlight enters the light receiving surface can be effectively reduced, the short-circuit current of the heterojunction solar cell can be improved, and the heterojunction solar cell has better photoelectric conversion efficiency.
More specifically, the sum of the thicknesses of the first intrinsic amorphous layer 21 and the first doped amorphous layer 31 is 6 to 21nm, and the sum of the thicknesses of the second intrinsic amorphous layer 22 and the second doped amorphous layer 32 is 6 to 30 nm.
In still other embodiments of the present invention, the thickness of the first intrinsic amorphous layer 21 on the first major surface is less than or equal to the thickness of the second intrinsic amorphous layer 22. Wherein the thickness of the first intrinsic amorphous layer 21 at the first main surface is preferably smaller than the thickness of the second intrinsic amorphous layer 22. In a specific embodiment, the first intrinsic amorphous layer 21 has a thickness of 3 to 6nm on the first major surface, and the second intrinsic amorphous layer 22 has a thickness of 4 to 10 nm.
Further, in the present invention, the thickness of the first doped amorphous layer 31 on the first main surface is smaller than or equal to the thickness of the second doped amorphous layer 32. It is preferable that the thickness of the first doped amorphous layer 31 is smaller than that of the second doped amorphous layer 32. In specific implementation, the thickness of the first doped amorphous layer 31 is 3-15nm, and the thickness of the second doped amorphous layer 32 is 3-20 nm.
Preferably, the first intrinsic amorphous layer 21 and the second intrinsic amorphous layer 22 according to the present invention each include at least two intrinsic films stacked one on another, each intrinsic film being formed of one of an intrinsic amorphous silicon film, an intrinsic amorphous silicon oxide film, and an intrinsic amorphous silicon carbide film.
Referring to fig. 7, the first and second intrinsic amorphous layers 21 and 22 according to this embodiment include three intrinsic films stacked one on another. In a direction away from the single crystal silicon substrate 10, the first intrinsic amorphous layer 21 sequentially includes a first intrinsic film 211, a second intrinsic film 212, and a third intrinsic film 213, and the second intrinsic amorphous layer 22 sequentially includes a fourth intrinsic film 221, a fifth intrinsic film 222, and a sixth intrinsic film 223. It is understood that the number of layers of the first intrinsic amorphous layer 21 and the second intrinsic amorphous layer 22 is not limited to the three-layer structure in other embodiments of the present invention.
The utility model discloses in, because first intrinsic amorphous layer 21 and second intrinsic amorphous layer 22 all include the intrinsic membrane of at least two-layer range upon range of setting, in the concrete implementation in-process, can be convenient for through the characteristic of controlling each rete, and then form the better first intrinsic amorphous layer 21 of comprehensive properties and second intrinsic amorphous layer 22.
As a preferred embodiment of the present invention, in the specific implementation process, the layer of the intrinsic film of the first intrinsic amorphous layer 21 farthest from the single crystal silicon substrate 10 is set as an intrinsic amorphous silicon oxide film. Referring to fig. 7, in this embodiment, the third intrinsic film 213 is an intrinsic film of the first intrinsic amorphous layer 21 farthest from the single crystal silicon substrate 10, and the third intrinsic film 213 in this embodiment is preferably an intrinsic amorphous silicon oxide film. It is to be understood that in other embodiments of the present invention, the layer of the intrinsic film farthest from the single crystal silicon substrate 10 in the second intrinsic amorphous layer 22 may also be provided as an intrinsic amorphous silicon oxide film, i.e., the sixth intrinsic film 223 farthest from the single crystal silicon substrate 10 in this embodiment may be provided as an intrinsic amorphous silicon oxide film.
The intrinsic amorphous silicon oxide film has a lower passivation effect than the intrinsic amorphous silicon film and the intrinsic amorphous silicon carbide film, but has a better light transmittance than the intrinsic amorphous silicon film and the intrinsic amorphous silicon carbide film, and in the heterojunction solar cell, the intrinsic film, which is the farthest layer from the monocrystalline silicon substrate 10, of the first intrinsic amorphous layer 21 and the second intrinsic amorphous layer 22 has a limited passivation effect on the monocrystalline silicon substrate 10 due to the distance, and the intrinsic amorphous silicon oxide film with the optimal light transmittance can optimize the photoelectric conversion efficiency of the heterojunction solar cell to a certain extent.
As a further preferred feature of the present invention, in the present invention, the intrinsic film hydrogen content near the single crystal silicon substrate 10 in the first intrinsic amorphous layer 21 is higher than the intrinsic film hydrogen content far from the single crystal silicon substrate, and the intrinsic film hydrogen content near the single crystal silicon substrate 10 in the second intrinsic amorphous layer 22 is higher than the intrinsic film hydrogen content far from the single crystal silicon substrate.
Referring to fig. 7, in this embodiment, the hydrogen contents of the first, second, and third intrinsic films 211, 212, and 213 in the first intrinsic amorphous layer 21 are sequentially reduced, and the hydrogen contents of the fourth, fifth, and sixth intrinsic films 221, 222, and 223 in the second intrinsic amorphous layer 22 are also sequentially reduced. It can be easily understood that the intrinsic films of the first and second intrinsic amorphous layers 21 and 22 closer to the single crystal silicon substrate 10 have more significant passivation effect, and the first and fourth intrinsic films 211 and 221 are directly attached to the single crystal silicon substrate 10, which has the highest hydrogen content such that the first and second intrinsic amorphous layers 21 and 22 have the optimal passivation effect on the single crystal silicon substrate 10.
As a preferred aspect of the present invention, when the first intrinsic amorphous layer 21 and the second intrinsic amorphous layer 22 respectively include three intrinsic films stacked on each other, the hydrogen content of the three intrinsic films of the first intrinsic amorphous layer 21 and the second intrinsic amorphous layer 22 respectively ranges from 20% to 40%, from 10% to 25% and from 8% to 20% in the direction away from the single crystal silicon substrate 10. That is, the hydrogen content of the first and fourth intrinsic films 211 and 221 ranges from 20% to 40%, the hydrogen content of the second and fifth intrinsic films 212 and 222 ranges from 10% to 25%, and the hydrogen content of the third and sixth intrinsic films 213 and 223 ranges from 8% to 20%.
Further preferably, in the embodiment shown in fig. 7, the hydrogen content of the first and fourth intrinsic films 211 and 221 ranges from 24% to 30%, the hydrogen content of the second and fifth intrinsic films 212 and 222 ranges from 12% to 18%, and the hydrogen content of the third and sixth intrinsic films 213 and 223 ranges from 10% to 15%.
As a further preferred embodiment of the present invention shown in fig. 7, when the first main surface of the single crystal silicon substrate 10 is a light receiving surface, the first intrinsic film 211, the second intrinsic film 212 and the third intrinsic film 213 in the first intrinsic amorphous layer 21 have thicknesses of 1 to 3nm, 2 to 4nm and 1 to 3nm in this order, and the fourth intrinsic film 221, the fifth intrinsic film 222 and the sixth intrinsic film 223 in the second intrinsic amorphous layer 22 have thicknesses of 1 to 5nm, 3 to 10nm and 0 to 5nm in this order.
Accordingly, it can be understood that, when the first main surface of the single crystal silicon substrate 10 is a back light surface, the thicknesses of the fourth intrinsic film 221, the fifth intrinsic film 222, and the sixth intrinsic film 223 in the second intrinsic amorphous layer 22 are in the range of 1 to 3nm, 2 to 4nm, and 1 to 3nm in this order, and the thicknesses of the first intrinsic film 211, the second intrinsic film 212, and the third intrinsic film 213 in the first intrinsic amorphous layer 21 are in the range of 1 to 5nm, 3 to 10nm, and 0 to 5nm in this order.
As a further preferred aspect, the ratio of bonded hydrogen atoms in the first intrinsic amorphous layer 21 and the second intrinsic amorphous layer 22 is 15% to 25% of the total hydrogen atoms. When specific passivation is used, bonding hydrogen atom plays decisive role, and bonding hydrogen atom accounts for about 10% usually in the intrinsic layer amorphous layer among the prior art to total hydrogen atom ratio, the utility model discloses in through improving bonding hydrogen atom accounts for total hydrogen atom's ratio in first intrinsic amorphous layer 21 and the intrinsic amorphous layer 22 of second, also can improve the passivation effect of first intrinsic amorphous layer 21 and the intrinsic amorphous layer 22 of second to monocrystalline silicon substrate 10 surface, and then further improve the open circuit voltage of corresponding heterojunction solar wafer.
In other embodiments of the present invention, the average concentration of hydrogen atoms in the first intrinsic amorphous layer 21 and the second intrinsic amorphous layer 22 is 1e22-5e22/cm3(ii) a Preferably 2.5e22-5e22/cm3. The concentration of hydrogen atoms in the intrinsic layer amorphous silicon layer of the heterojunction solar cells of the prior art is generally less than 1e22 atoms/cm3The low concentration of hydrogen atom content makes the intrinsic layer amorphous silicon layer have a poor passivation effect. The utility model discloses in through the hydrogen atom concentration that improves in first intrinsic amorphous layer 21 and the intrinsic amorphous layer 22 of second, can effectively improve the passivation effect of first intrinsic amorphous layer 21 and the intrinsic amorphous layer 22 of second to monocrystalline silicon substrate 10 surface, and then improve the open circuit voltage of corresponding heterojunction solar wafer.
As a further specific embodiment of the present invention, referring to fig. 8, in the direction from the backlight surface to the light receiving surface, the first doped amorphous layer 31 includes a first doped amorphous silicon film 301 on the surface of the first intrinsic amorphous layer 21 and a doped amorphous silicon oxide film, a doped amorphous silicon carbide film or a doped amorphous silicon carbide/doped amorphous silicon oxide composite film 302 on the surface of the first doped amorphous silicon film 301. It is easy to understand that the doped amorphous silicon carbide/doped amorphous silicon oxide composite film refers to a film layer formed by compounding a doped amorphous silicon oxide film and a doped amorphous silicon carbide film.
The doped amorphous silicon oxide and the doped amorphous silicon carbide have more excellent light transmittance compared with the doped amorphous silicon. The first doped amorphous layer 31' of the related art is generally a single-layer doped amorphous silicon film structure; in this embodiment, the first doped amorphous layer 31 is designed as a double-layer film, wherein the first doped amorphous silicon film 301 can ensure that the first doped amorphous layer 31 and the first intrinsic amorphous layer 21 have a good contact, and the doped amorphous silicon oxide film, the doped amorphous silicon carbide film or the doped amorphous silicon carbide/doped amorphous silicon oxide composite film 302 is equivalent to replacing a part of doped amorphous silicon in the prior art with doped amorphous silicon oxide or doped amorphous silicon carbide with high transmittance, so that the overall transmittance of the first doped amorphous layer 31 can be improved. Based on the cooperation of the first doped amorphous silicon film 301 and the doped amorphous silicon oxide film, the doped amorphous silicon carbide film or the doped amorphous silicon carbide/doped amorphous silicon oxide composite film 302, the heterojunction solar cell has more excellent performance.
In the embodiment shown in fig. 8, the thickness of the first doped amorphous silicon film 301 is preferably generally less than the thickness of the doped amorphous silicon oxide film, the doped amorphous silicon carbide film, or the doped amorphous silicon carbide/doped amorphous silicon oxide composite film 302. Thus, while ensuring a good contact between the first doped amorphous layer 31 and the first intrinsic amorphous layer 21, the first doped amorphous layer 31 can have a good transmittance to a great extent.
In the specific implementation process, the thickness of the doped amorphous silicon oxide film, the doped amorphous silicon carbide film or the doped amorphous silicon carbide/doped amorphous silicon oxide composite film 302 is 2-10 nm. Accordingly, the thickness of the first doped amorphous silicon film 301 is 1 to 5 nm.
To ensure a better contact between the first doped amorphous layer 31 and the first intrinsic amorphous layer 21, the first doped amorphous silicon film 301 is a highly doped film with a carrier concentration of 5E 19-5E 21/cm3。
In other embodiments of the present invention, referring to fig. 9, the first doped amorphous layer 31 further includes a second doped amorphous silicon film 303 on the surface of the doped amorphous silicon oxide film, the doped amorphous silicon carbide film or the doped amorphous silicon carbide/doped amorphous silicon oxide composite film 302. The doped amorphous silicon generally has excellent conductivity, and the second doped amorphous silicon film 303 in the embodiment shown in fig. 9 is disposed to make the first doped amorphous layer 31 and the first transparent conductive film 41 have better contact, so that the contact resistance can be reduced compared to the embodiment shown in fig. 8, and thus the heterojunction solar cell has a higher fill factor.
In the embodiment shown in fig. 9, the thickness of the second doped amorphous silicon film 303 is also generally smaller than the thickness of the doped amorphous silicon oxide film, the doped amorphous silicon carbide film or the doped amorphous silicon carbide/doped amorphous silicon oxide composite film 302, so that the first doped amorphous layer 31 has better light transmittance. In specific implementation, the thickness of the first doped amorphous silicon film 301 is 1-4nm, the thickness of the doped amorphous silicon oxide film, the doped amorphous silicon carbide film or the doped amorphous silicon carbide/doped amorphous silicon oxide composite film 302 is 1-7nm, and the thickness of the second doped amorphous silicon film 303 is 1-4 nm.
In order to ensure a better contact between the first doped amorphous layer 31 and the first transparent conductive film 41, the second doped amorphous silicon film 303 is also a highly doped film with a carrier concentration of 5E 19-5E 21/cm3。
Referring to fig. 8 and 9, in still other embodiments of the present invention, the second doped amorphous layer 32 includes a third doped amorphous silicon film 304 on the surface of the second intrinsic amorphous layer 22 and a fourth doped amorphous silicon film 305 on the surface of the third doped amorphous silicon film 304 and having a doping concentration greater than that of the third doped amorphous silicon film 304.
Preferably, the carrier concentration of the third doped amorphous silicon film 304 is 5E 18-5E 19/cm3The carrier concentration of the fourth doped amorphous silicon film 305 is 5E 19-5E 21/cm3。
In the embodiment shown in fig. 8 and 9, the third doped amorphous silicon film 304 has a relatively low doping concentration, so that the influence on the second intrinsic amorphous layer 22 can be reduced, the lattice distortion of the second intrinsic amorphous layer 22 can be reduced, and the passivation effect of the backlight surface of the heterojunction solar cell can be effectively ensured; the fourth doped amorphous silicon film 305 has a relatively high doping concentration, so that the contact between the second doped amorphous layer 32 and the second transparent conductive film can be improved, the contact resistance between the second doped amorphous layer and the second transparent conductive film can be reduced, and the cell fill factor can be improved.
Preferably, the thickness of the third doped amorphous silicon film 304 is generally smaller than that of the fourth doped amorphous silicon film 305. In specific implementation, the thickness of the third doped amorphous silicon film 304 is 1-5nm, and the thickness of the fourth doped amorphous silicon film 305 is 2-15 nm.
In the present invention, the thickness of the first conductive film layer 41 is generally less than or equal to the thickness of the second conductive film layer 42, and in the specific implementation, the thickness of the first conductive film layer 41 is 60-90nm, and the thickness of the second conductive film layer 42 is 80-120 nm; in addition, both the first conductive film 41 and the second conductive film 42 can be tin-doped indium oxide (ITO) or tungsten-doped indium oxide (IWO).
In the present invention, the more detailed design structure of the first collector electrode 51 and the second collector electrode 52 can refer to the prior art, and is not described herein.
For better understanding the utility model discloses, following still demonstrates the concrete mode of making of four layers amorphous silicon layers of heterojunction solar wafer: introducing pure SiH4 facing the first main surface side of the monocrystalline silicon substrate 10, introducing SiH4 diluted by H2, and growing a first intrinsic amorphous layer 21 under the action of a 13.56MHz radio frequency power supply; then, pure SiH4 is firstly introduced to the second main surface side facing the monocrystalline silicon substrate 10, then SiH4 diluted by H2 is introduced, and the second intrinsic amorphous layer 22 grows under the action of a 13.56MHz radio frequency power supply; then, introducing PH3, SiH4, and H2 toward the first main surface side of the single crystal silicon substrate 10 to fabricate a first doped amorphous layer 31; finally, B2H6, SiH4, and H2 are introduced to the second main surface side of the surface single crystal silicon substrate 10, thereby producing a second doped amorphous layer 32.
It is understood that the first intrinsic amorphous layer 21, the second intrinsic amorphous layer 22, the first doped amorphous layer 31 and the second doped amorphous layer 32 are formed in different coating chambers, respectively; in addition, in the four-layer amorphous film plating process, the monocrystalline silicon substrate 10 is loaded on the first carrier 600 in the same state, and the monocrystalline silicon substrate 10 does not need to be turned over in the process, so that the problem of pollution caused by turning over in the amorphous silicon layer plating process in the prior art can be effectively avoided.
In addition, in the process of plating the four amorphous silicon layers, before the corresponding amorphous silicon layers are plated, the temperature and the pressure of the related plating chamber need to reach preset values, the temperature is usually 180 ℃, and the pressure is controlled to be 30-200 pa.
In order to optimize the passivation effect of the first intrinsic amorphous layer 21 and the second intrinsic amorphous layer 22 on the single crystal silicon substrate 10, in the specific manufacturing process of the first intrinsic amorphous layer 21 and the second intrinsic amorphous layer 22, when SiH4 diluted by H2 is introduced, the dilution ratio of H2/SiH4 can be adjusted, and further the multilayer morphological film, such as 2-6 layers, is prepared, and usually the dilution ratio of H2/SiH4 is in the range of 5-250.
When the first doped amorphous layer 31 and the second doped amorphous layer 32 are fabricated, CO2 or CH4 may be introduced into the corresponding plating chamber, so that the first doped amorphous layer 31 and the second doped amorphous layer 32 are made of amorphous silicon oxide or amorphous silicon carbide.
It should be understood that although the present description refers to embodiments, not every embodiment contains only a single technical solution, and such description is for clarity only, and those skilled in the art should make the description as a whole, and the technical solutions in the embodiments can also be combined appropriately to form other embodiments understood by those skilled in the art.
The above list of details is only for the practical implementation of the present invention, and they are not intended to limit the scope of the present invention, and all equivalent implementations or modifications that do not depart from the technical spirit of the present invention should be included in the scope of the present invention.
Claims (16)
1. A heterojunction solar cell, comprising:
the single crystal silicon substrate is provided with a first main surface and a second main surface which are arranged oppositely, and a side surface connecting the first main surface and the second main surface, wherein the second main surface comprises a middle area and an edge area which is arranged around the middle area;
the first structural film covers the first main surface and the side surface of the monocrystalline silicon substrate and points to the direction of the first structural film from the monocrystalline silicon substrate, and the first structural film comprises a first intrinsic amorphous layer, a first doped amorphous layer and a first transparent conductive film layer which are sequentially stacked;
a first collector electrode on a surface of the first structural film on a side away from the single-crystal silicon substrate;
the second structural film is positioned in the middle area of the second main surface of the monocrystalline silicon substrate and points to the direction of the second structural film from the monocrystalline silicon substrate, and the second structural film comprises a second intrinsic amorphous layer, a second doped amorphous layer with the doping type opposite to that of the first doped amorphous layer and a second transparent conductive film layer which are sequentially stacked;
and the second collector electrode is positioned on the surface of one side, away from the monocrystalline silicon substrate, of the second structural film.
2. The heterojunction solar cell of claim 1, wherein the first structural film extends to the second major side of the single-crystal silicon substrate and blocks a portion of the edge region.
3. The heterojunction solar cell of claim 1, wherein the edges of the second doped amorphous layer and the second transparent conductive film layer in the second structural film are both connected to the second major surface of the single-crystal silicon substrate.
4. The heterojunction solar cell of any of claims 1 to 3, wherein the width dimension of the edge region is 0.1-1.0 mm.
5. The heterojunction solar cell of claim 4, wherein the width dimension of the edge region is 0.2-0.8 mm.
6. The heterojunction solar cell of any of claims 1 to 3, wherein the first major surface of the single-crystal silicon substrate is a light-receiving surface and the second major surface is a backlight surface.
7. The heterojunction solar cell of claim 6, wherein the monocrystalline silicon substrate is n-type monocrystalline silicon, the first doped amorphous layer is n-type doped amorphous silicon, and the second doped amorphous layer is p-type doped amorphous silicon.
8. The heterojunction solar cell of claim 6, wherein the sum of the thicknesses of the first intrinsic amorphous layer and the first doped amorphous layer on the first major surface is less than or equal to the sum of the thicknesses of the second intrinsic amorphous layer and the second doped amorphous layer.
9. The heterojunction solar cell of claim 6, wherein the thickness of the first intrinsic amorphous layer on the first major surface is less than or equal to the thickness of the second intrinsic amorphous layer.
10. The heterojunction solar cell of any of claims 1 to 3, wherein said first intrinsic amorphous layer and said second intrinsic amorphous layer comprise at least two intrinsic films disposed in a stack, respectively, each of said intrinsic films being formed of one of an intrinsic amorphous silicon film, an intrinsic amorphous silicon oxide film, and an intrinsic amorphous silicon carbide film.
11. The heterojunction solar cell of claim 10, wherein the layer of intrinsic film of the first intrinsic amorphous layer and/or the second intrinsic amorphous layer furthest from the single crystal silicon substrate is an intrinsic amorphous silicon oxide film.
12. The heterojunction solar cell of claim 6, wherein the thickness of the first transparent conductive film layer is less than or equal to the thickness of the second transparent conductive film layer.
13. The heterojunction solar cell of claim 6, wherein the first doped amorphous layer sequentially comprises a first doped amorphous silicon film and a doped amorphous silicon oxide film, a doped amorphous silicon carbide film or a doped amorphous silicon carbide/doped amorphous silicon oxide composite film on the surface of the first doped amorphous silicon film from the backlight surface to the light-receiving surface.
14. The heterojunction solar cell of claim 13, wherein the first doped amorphous layer further comprises a second doped amorphous silicon film on the surface of the doped amorphous silicon oxide film, the doped amorphous silicon carbide film, or the doped amorphous silicon carbide/doped amorphous silicon oxide composite film.
15. The heterojunction solar cell of claim 6, wherein the second doped amorphous layer comprises a third doped amorphous silicon film and a fourth doped amorphous silicon film located on the surface of the third doped amorphous silicon film and having a doping concentration greater than that of the third doped amorphous silicon film in sequence from the light receiving surface to the backlight surface.
16. A photovoltaic module having a heterojunction solar cell according to any of claims 1 to 15.
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Address after: 314000 buildings 1 and 2, No. 325, Kanghe Road, Gaozhao street, Xiuzhou District, Jiaxing City, Zhejiang Province Patentee after: Jiaxing atlas Technology Research Institute Co.,Ltd. Address before: Room 1505-8, building 1, Jiaxing photovoltaic technology innovation park, 1288 Kanghe Road, Gaozhao street, Xiuzhou District, Jiaxing City, Zhejiang Province, 314000 Patentee before: Jiaxing atlas Photovoltaic Technology Co., Ltd |