CN212640661U - SiC vapor phase epitaxy device - Google Patents
SiC vapor phase epitaxy device Download PDFInfo
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- CN212640661U CN212640661U CN202021178328.XU CN202021178328U CN212640661U CN 212640661 U CN212640661 U CN 212640661U CN 202021178328 U CN202021178328 U CN 202021178328U CN 212640661 U CN212640661 U CN 212640661U
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- gas
- phase epitaxy
- vapor phase
- gas outlet
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- 238000000927 vapour-phase epitaxy Methods 0.000 title claims abstract description 21
- 238000010438 heat treatment Methods 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 239000002245 particle Substances 0.000 abstract description 7
- 238000013461 design Methods 0.000 abstract description 3
- 238000012423 maintenance Methods 0.000 abstract description 3
- 230000001133 acceleration Effects 0.000 abstract description 2
- 230000000903 blocking effect Effects 0.000 abstract description 2
- 230000002035 prolonged effect Effects 0.000 abstract description 2
- 239000008187 granular material Substances 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 62
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 35
- 229910010271 silicon carbide Inorganic materials 0.000 description 35
- 235000012431 wafers Nutrition 0.000 description 11
- 239000010419 fine particle Substances 0.000 description 10
- 239000000463 material Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 230000003416 augmentation Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The utility model discloses a SiC vapor phase epitaxy device, it includes reaction cavity and sets up the substrate tray in this reaction cavity, and the both sides position that reaction cavity corresponds substrate tray is corresponding to be equipped with air inlet and gas outlet, the position that corresponds the gas outlet in at least be equipped with a tail end gas filling mouth that can accelerate this gas outlet gas flow rate on the reaction cavity. The utility model has the advantages of ingenious structural design, reasonable arrangement of the tail gas increasing port, and effective acceleration of the gas flow rate of the gas outlet, so that the occurrence probability of the blocking condition of the pipeline at the rear end of the gas outlet is effectively reduced, the maintenance period of the device is further prolonged, the particle number in the reaction cavity is also reduced, and the epitaxial quality and the yield of the wafer are further improved; but also can improve the temperature of the position of giving vent to anger through heating device, do benefit to effectively and take away from the inside tiny granule of reaction cavity to the cavity outside, further guarantee product quality, overall structure is simple in addition, easily realizes, does benefit to extensive popularization and application.
Description
Technical Field
The utility model relates to a semiconductor equipment technical field, concretely relates to a SiC vapor phase epitaxy device for carborundum (SiC) semiconductor material.
Background
In recent years, the third generation wide bandgap semiconductor material represented by silicon carbide (SiC) has a wider bandgap, a stronger breakdown field strength and a better thermal conductivity than the conventional Si, and is an ideal material for preparing high-temperature and high-frequency devices such as high power devices, microwaves and the like. The silicon carbide epitaxial growth is a basic core process for manufacturing a power device, and the accurate control of the carrier concentration, the conductivity type and the film thickness can be realized through the epitaxial growth, so that a high-quality epitaxial wafer is obtained.
However, most SiC devices are not fabricated directly on the substrate, but rather on a SiC homoepitaxial layer. The main method for growing SiC epitaxial materials is chemical vapor transport (CVD), which can grow high-purity, large-size SiC epitaxial wafers and can effectively reduce various defects in SiC epitaxial materials. Document doi.org/10.11501/3110677 states that in SiH4-C3H8-H2In epitaxial growth of SiC under the system, SiH4—>Si+H2，C3H8—>C2H2+H2And further Si + C2H2—>SiC+H2(ii) a Since the utilization rate of the gas source is not up to 100% (not all used for growing SiC epitaxial wafers), part of the gas source is attached to the bottom of the reaction chamber and an exhaust gas pipeline in a solid form.
In the silicon carbide epitaxial growth process, fine particles are continuously generated and gradually deposited at the bottom of the reaction chamber, and when the fine particles are accumulated to a certain degree, the defect density of the SiC wafer in the next period is increased, and the epitaxial quality of the SiC wafer is seriously influenced.
Referring to fig. 1, a schematic structural diagram of a conventional SiC vapor phase epitaxy apparatus is shown. Reaction source gas (SiH)4+C3H8) Along with the carrier gas (H)2) Entering the reaction chamber 2 from the gas inlet 1, and simultaneously raising the temperature of the reaction chamber 2 to a target temperature (1400-1550 ℃); when the SiC gas flows through the substrate tray 3, the gas reacts at a proper temperature to generate SiC, most of the SiC is deposited on SiC wafers on the substrate tray 3, and the rest SiC moves towards the gas outlet 4 along with the gas flow; due to the relatively low temperature near the gas outlet 4, this portion of SiC adheres to the inner walls of the reaction chamber 2 and the gas outlet 4 conduit, thereby gradually forming a cumulative aggregation of SiC particles near the gas outlet 4. The accumulated particles can affect the epitaxial quality of the SiC wafer in the next period on one hand; on the other hand, the exhaust condition of the rear end pipeline of the air outlet is possibly influenced, and the normal working time of the epitaxial device is further shortened.
The invention discloses a self-purification system for a closed reaction chamber, which is characterized in that a fan is arranged in the closed reaction chamber, an air supply opening is arranged outside an upper cavity, an air suction opening is arranged outside a lower cavity, after the fan is started to open an electric control air valve, air in the closed reaction chamber flows to the lower cavity from the upper cavity and then enters a filter box at the bottom from the lower cavity, meanwhile, the air in the cavity flows to drive fine particles accumulated at the bottom of the upper cavity and the bottom of the lower cavity to enter the filter box, the filtered air enters the reaction chamber from an air supply flange, and the air entering the upper cavity passes through a filter box at the top, so that the fine particles are further filtered, and the cleaning of the closed reaction chamber is realized. However, since this method is to perform a separate chamber particle cleaning after depositing a large amount of particles inside the reaction chamber, it results in a reduction in the effective operation time of the SiC vapor phase epitaxy apparatus per production day, and in turn, a reduction in the yield of SiC epitaxial wafers.
SUMMERY OF THE UTILITY MODEL
To the above, an object of the utility model is to provide a structural design is ingenious, reasonable, has effectively reduced the inside particle number of reaction cavity, and extension device maintenance cycle has just improved the SiC vapor phase epitaxy device of the epitaxial quality of wafer.
In order to achieve the above purpose, the utility model provides a technical scheme is: the utility model provides a SiC vapour phase epitaxy device, its includes reaction cavity and sets up the substrate tray in this reaction cavity, the reaction cavity corresponds the both sides position of substrate tray and correspondingly is equipped with air inlet and gas outlet, corresponds the position of gas outlet in be equipped with the tail end gas filling mouth that can accelerate this gas outlet gas flow rate on the reaction cavity at least.
As the utility model discloses a preferred scheme, the quantity of tail end gas increase mouth is a plurality of, and evenly distributed is in on the reaction cavity, effectively improve the gas outlet gas flow rate.
As an optimized proposal of the utility model, the tail end air increasing port is provided with an air valve, which can control the air inlet flow through the air valve and has simple operation.
As an optimized proposal of the utility model, the gas outlet is positioned the cavity wall of the reaction cavity is close to the gas outlet position, which can accelerate the gas flow rate of the gas outlet.
As an optimized proposal of the utility model, the air outlet direction of the tail end air increasing port is the same as the air outlet direction of the air outlet.
As an optimized scheme of the utility model, the tail end increase the gas mouth give vent to anger the direction with the direction of giving vent to anger of gas outlet is contained angle 1 ~ 90 degrees, preferably 30 degrees.
As an optimized scheme of the utility model, the tail end air augmentation mouth is connected with air supply system, provides the air supply through air supply system to accelerate the gas outlet gas velocity of flow.
As an optimized proposal of the utility model, the tail end gas increasing port is provided with a heating device and corresponds the position of the gas outlet is arranged on the reaction cavity body or is provided with a heating device on the gas outlet. The temperature of the air outlet position is improved through the heating device, and fine particles in the reaction cavity are effectively taken away to the outside of the cavity.
As an optimized proposal of the utility model, the tail end gas increasing port is provided with a heating device and corresponds the position of the gas outlet is arranged on the reaction cavity body or is provided with a heating device on the gas outlet. The temperature of the air outlet position is improved through the heating device, and fine particles in the reaction cavity are effectively taken away to the outside of the cavity.
The utility model has the advantages that: the utility model has the advantages of ingenious structural design, reasonable arrangement of the tail gas increasing port, and effective acceleration of the gas flow rate of the gas outlet, so that the occurrence probability of the blocking condition of the pipeline at the rear end of the gas outlet is effectively reduced, the maintenance period of the device is further prolonged, the particle number in the reaction cavity is also reduced, and the epitaxial quality and the yield of the wafer are further improved; in addition, the temperature of the air outlet position can be increased through the heating device, so that fine particles in the reaction cavity can be effectively carried to the outside of the cavity, and the product quality is further ensured.
The present invention will be further explained with reference to the drawings and the embodiments.
Drawings
Fig. 1 is a schematic structural view of a conventional SiC vapor phase epitaxy apparatus.
Fig. 2 is a schematic structural diagram 1 of the present invention.
Fig. 3 is a schematic structural diagram 2 of the present invention.
Detailed Description
In order to conveniently adjust the air inlet flow of the tail-end air adding port 5, an air valve (not shown in the figure) is arranged on the tail-end air adding port 5, the air inlet flow can be controlled through the air valve, and the operation is simple.
In this embodiment, an included angle a is formed between the air outlet direction of the tail-end air increasing port 5 and the air outlet direction of the air outlet 4, and the included angle a is 90 degrees. In other embodiments, the included angle a can be arbitrarily selected within a range of 1 to 90 degrees. Of course, the air outlet direction of the tail gas increasing opening 5 can also be the same as the air outlet direction of the air outlet 4. If the tail gas increasing port 5 extends into the reaction cavity 2 and then bends to extend along the gas outlet direction of the gas outlet 4, the gas flow rate of the gas outlet 4 can be accelerated.
The rear-end plenum 5 is connected to a gas supply system (not shown) through which a source of gas, such as H, is provided2And the like. During operation, the flow velocity of gas at the gas outlet 4 can be greatly accelerated, fine particles in the reaction cavity 2 are effectively carried away to the outside of the chamber, the probability that SiC is attached to the inner wall of the reaction cavity 2 is reduced, and further the epitaxial quality of the SiC wafer and the yield of the SiC gas phase epitaxial device are improved.
Variations and modifications to the above-described embodiments may occur to those skilled in the art, in light of the above teachings and teachings. Therefore, the present invention is not limited to the specific embodiments disclosed and described above, and some modifications and changes to the present invention should fall within the protection scope of the claims of the present invention. Furthermore, although specific terms are employed herein, they are used in a generic and descriptive sense only and not for purposes of limitation. If the present invention is applied to the above embodiments, other devices obtained by using the same or similar structure are all within the protection scope of the present invention.
Claims (10)
1. The utility model provides a SiC vapour phase epitaxy device, its includes reaction chamber and sets up the substrate tray in this reaction chamber, its characterized in that, the corresponding air inlet and the gas outlet that is equipped with in both sides position that reaction chamber corresponds substrate tray, corresponds the position of gas outlet in the last tail end gas filling mouth that can accelerate this gas outlet gas flow rate that is equipped with of reaction chamber at least.
2. SiC vapor phase epitaxy apparatus according to claim 1, characterized in that: the number of the tail gas increasing ports is multiple, and the tail gas increasing ports are uniformly distributed on the reaction cavity.
3. SiC vapor phase epitaxy apparatus according to claim 1, characterized in that: and an air valve is arranged on the tail end air increasing port.
4. SiC vapor phase epitaxy apparatus according to claim 1, characterized in that: the tail gas increasing port is positioned on the wall of the reaction cavity and close to the gas outlet.
5. SiC vapor phase epitaxy apparatus according to claim 1, characterized in that: the air outlet direction of the tail end air increasing port is the same as the air outlet direction of the air outlet.
6. SiC vapor phase epitaxy apparatus according to claim 1, characterized in that: the air outlet direction of the tail end air increasing port and the air outlet direction of the air outlet form an included angle of 1-90 degrees.
7. The SiC vapor phase epitaxy apparatus of any one of claims 1 to 6, wherein: the tail gas increasing port is connected with a gas supply system.
8. The SiC vapor phase epitaxy apparatus of any one of claims 1 to 6, wherein: and a heating device is arranged on the tail gas increasing port.
9. The SiC vapor phase epitaxy apparatus of any one of claims 1 to 6, wherein: and a heating device is arranged on the reaction cavity corresponding to the gas outlet.
10. The SiC vapor phase epitaxy apparatus of any one of claims 1 to 6, wherein: and a heating device is arranged on the air outlet.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202021178328.XU CN212640661U (en) | 2020-06-23 | 2020-06-23 | SiC vapor phase epitaxy device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202021178328.XU CN212640661U (en) | 2020-06-23 | 2020-06-23 | SiC vapor phase epitaxy device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN212640661U true CN212640661U (en) | 2021-03-02 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202021178328.XU Active CN212640661U (en) | 2020-06-23 | 2020-06-23 | SiC vapor phase epitaxy device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN212640661U (en) |
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2020
- 2020-06-23 CN CN202021178328.XU patent/CN212640661U/en active Active
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| GR01 | Patent grant | ||
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Effective date of registration: 20220218 Address after: Building A1, innovation city, Songshanhu University, Dongguan, Guangdong 523000 Patentee after: Material Laboratory of Songshan Lake Patentee after: Institute of physics, Chinese Academy of Sciences Address before: Building A1, innovation city, Songshanhu University, Dongguan, Guangdong 523000 Patentee before: Material Laboratory of Songshan Lake |
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| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20220826 Address after: Building A1, innovation city, Songshanhu University, Dongguan, Guangdong 523000 Patentee after: Material Laboratory of Songshan Lake Patentee after: Zhongke Huizhu (Dongguan City) Consulting Management Enterprise (L.P.) Address before: Building A1, innovation city, Songshanhu University, Dongguan, Guangdong 523000 Patentee before: Material Laboratory of Songshan Lake Patentee before: INSTITUTE OF PHYSICS, CHINESE ACADEMY OF SCIENCES |
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| TR01 | Transfer of patent right |
Effective date of registration: 20220930 Address after: 523000 Room 309, Building 12, No.1 Xuefu Road, Songshan Lake Park, Dongguan, Guangdong Patentee after: Dongguan Zhongke Huizhu Semiconductor Co.,Ltd. Address before: Building A1, innovation city, Songshanhu University, Dongguan, Guangdong 523000 Patentee before: Material Laboratory of Songshan Lake Patentee before: Zhongke Huizhu (Dongguan City) Consulting Management Enterprise (L.P.) |
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