Heat-resistant FIW completely-insulated wire
Technical Field
The utility model relates to a FIW complete insulated wire technical field especially relates to a heat-resistant type FIW complete insulated wire.
Background
FIW wire is defined in the industry as a fully insulated enameled wire, which belongs to the category of enameled wire, but FIW wire is defined as a product that can replace the conventional TIW (triple insulated wire) from the viewpoint of performance. At present, the common enameled wire is resistant to voltage of 1.50KV, the three-layer insulated wire is resistant to voltage of 6.0KV, the thickness of an insulating layer cannot meet the application requirement of a 5G product, the 5G product is large in calorific value due to large power consumption, and the conventional three-layer insulated wire and the common enameled wire cannot be well used under a high-temperature condition for a long time.
Accordingly, the prior art is deficient and needs improvement.
SUMMERY OF THE UTILITY MODEL
The to-be-solved technical problem of the utility model is: provides a heat-resistant FIW completely-insulated wire, which meets the application requirements of 5G products.
The technical scheme of the utility model as follows: there is provided a heat resistant FIW fully insulated wire comprising: the cable comprises a conductor, a basic insulating layer coated on the surface of the conductor, a voltage-resistant insulating layer coated on the basic insulating layer, a shielding insulating layer coated on the voltage-resistant insulating layer, and a wear-resistant insulating layer coated on the shielding insulating layer.
The base insulating layer includes: first polyurethane material layer and first polytetrafluoroethylene material layer, first polyurethane material layer and first polytetrafluoroethylene material layer superpose each other, and/or, splice each other in order to form basic insulating layer.
The voltage-resistant insulating layer includes: the second polyurethane material layer and the second polytetrafluoroethylene material layer are mutually overlapped and/or mutually spliced to form the pressure-resistant insulating layer.
The shielding insulating layer includes: the shielding material layer comprises a third polyurethane material layer, a third polytetrafluoroethylene material layer and a shielding material layer, wherein the third polyurethane material layer, the third polytetrafluoroethylene material layer and the shielding material layer are mutually overlapped and/or are mutually spliced to form a shielding insulating layer.
The wear-resistant insulating layer comprises: nylon polyurethane lacquer and fourth polytetrafluoroethylene material layer, nylon polyurethane lacquer and fourth polytetrafluoroethylene material layer superpose each other, and/or, splice each other in order to form wear-resisting insulating layer.
The basic insulating layer can coat the surface of the conductor and coat the pits and the bulges on the surface of the conductor to provide the basic insulating effect; strengthen the insulating layer cladding on basic insulating layer surface, further strengthen the insulated wire effect, shielding insulating layer when providing the shielding effect, further strengthen insulating effect, wear-resisting insulating layer provides wear-resisting performance, reducing wear when strengthening insulating effect. The high-temperature-resistant polytetrafluoroethylene material layers are added into the basic insulating layer, the reinforcing insulating layer, the shielding insulating layer and the wear-resistant insulating layer, so that the high-temperature resistance of the heat-resistant FIW completely-insulated wire can be effectively enhanced, and the application requirement of a 5G product is met.
Further, the base insulating layer further includes: a polyolefin elastomer layer, the first polyurethane material layer, the first polytetrafluoroethylene material layer being superimposed on one another and/or being mutually spliced to form a base insulation layer. The polyolefin elastomer material has excellent performances of aging resistance, ozone resistance, chemical medium resistance and the like, and the polyolefin elastomer layer is added into the base insulating layer, so that the service life of the base insulating layer can be effectively prolonged, and the service life of the heat-resistant FIW completely-insulated wire is integrally prolonged.
Further, the voltage-resistant insulating layer further includes: the zinc oxide material layer, the second polyurethane material layer and the second polytetrafluoroethylene material layer are mutually overlapped and/or mutually spliced to form the pressure-resistant insulating layer. The zinc oxide material is an excellent insulating material, and the zinc oxide material layer added into the voltage-resistant insulating layer can greatly improve the voltage-resistant performance of the voltage-resistant insulating layer, so that the voltage-resistant performance of the heat-resistant FIW completely-insulated wire is integrally improved.
Further, the voltage-resistant insulating layer further includes: the first modified polytetrafluoroethylene material layer, the second polyurethane material layer and the second polytetrafluoroethylene material layer are mutually overlapped and/or mutually spliced to form the pressure-resistant insulating layer. The modified polytetrafluoroethylene material has better high temperature resistance, and the first modified polytetrafluoroethylene material layer added into the voltage-resistant insulating layer can further improve the high temperature resistance of the voltage-resistant insulating layer, so that the high temperature resistance of the heat-resistant FIW completely-insulated wire is integrally improved.
Further, the shielding insulating layer further includes: the second modified polytetrafluoroethylene material layer, third polyurethane material layer, third polytetrafluoroethylene material layer, shielding material layer superpose each other, and/or, splice each other in order to form shielding insulating layer. The modified polytetrafluoroethylene material has better high temperature resistance, and the second modified polytetrafluoroethylene material layer added into the shielding insulating layer can further improve the high temperature resistance of the shielding insulating layer, so that the high temperature resistance of the heat-resistant FIW completely-insulated wire is integrally improved.
Further, the wear-resistant insulating layer further comprises: the third modified polytetrafluoroethylene material layer, nylon polyurethane paint, fourth polytetrafluoroethylene material layer superpose each other, and/or, splice each other in order to form wear-resisting insulating layer. The modified polytetrafluoroethylene material has better high temperature resistance, and the third modified polytetrafluoroethylene material layer added into the wear-resistant insulating layer can further improve the high temperature resistance of the wear-resistant insulating layer, so that the high temperature resistance of the heat-resistant FIW completely-insulated wire is integrally improved.
Further, the wear-resistant insulating layer further comprises: the silica layer, nylon polyurethane lacquer, fourth polytetrafluoroethylene material layer superpose each other, and/or, splice each other in order to form wear-resisting insulating layer. Silica is a raw material of a refractory material having a good heat resistance. The silicon dioxide layer is added into the wear-resistant insulating layer, so that the high-temperature resistance of the heat-resistant FIW completely-insulated wire can be further improved.
Further, the base insulating layer further includes: the insulating layer comprises a first ethylene bis stearamide material layer, wherein the first ethylene bis stearamide material layer, the first polyurethane material layer and the first polytetrafluoroethylene material layer are mutually overlapped and/or mutually spliced to form a basic insulating layer.
The voltage-resistant insulating layer further includes: and the second ethylene bis-stearamide material layer, the second polyurethane material layer and the second polytetrafluoroethylene material layer are overlapped with each other and/or spliced with each other to form the pressure-resistant insulating layer.
The shielding insulating layer further includes: and the third ethylene bis stearamide material layer, the third polyurethane material layer, the third polytetrafluoroethylene material layer and the shielding material layer are mutually overlapped and/or mutually spliced to form the shielding insulating layer.
The wear-resistant insulating layer further comprises: the fourth ethylene bis stearamide material layer, nylon polyurethane lacquer, fourth polytetrafluoroethylene material layer superpose each other, and/or, splice each other in order to form wear-resisting insulating layer.
The ethylene bis-stearamide material layer is used as an auxiliary material layer to improve the smoothness of the base insulating layer, the voltage-resistant insulating layer, the shielding insulating layer and the wear-resistant insulating layer so as to improve the overall performance of the heat-resistant FIW completely-insulated wire.
Further, the number of layers of the material layer in the base insulating layer is as follows: 3-5 layers, the thickness of each material layer is: 1-2 μm; the thickness of the material layer in the voltage-resistant insulating layer is as follows: 10-40 layers, wherein the thickness of each material layer is as follows: 1-2 μm; the thickness of the shielding insulating layer seed material layer is as follows: 5-20 layers, the thickness of each layer of material is: 1-2 μm; the number of layers of material layers in the wear-resistant insulating layer is 3-10, and the thickness of each layer of material layer is as follows: 1-2 μm. The multi-layer structure can remove the defects of concave pits and convex lamps caused by a single-layer structure.
Further, the conductor is metal copper, and the shielding material layer is a shielding metal paint layer.
The heat-resistant FIW completely-insulated wire can continuously work for one week (168 hours) in an environment of 180 ℃; the withstand voltage performance reaches more than 20KV, which is much higher than 6.0KV of the common three-layer insulated wire, thereby meeting the requirement of withstand voltage of more than 20KV applied to 5G products.
Adopt above-mentioned scheme, the utility model provides a but heat-resisting type FIW complete insulated wire is through increasing the polytetrafluoroethylene material layer with high temperature resistance in basic insulation layer, withstand voltage insulating layer, shielding insulation layer, wear-resisting insulating layer to promote the high temperature resistance performance of heat-resisting type FIW complete insulated wire. The base insulating layer, the voltage-resistant insulating layer, the shielding insulating layer and the wear-resistant insulating layer enable the voltage resistance of the heat-resistant FIW completely-insulated wire to reach more than 20KV, which is far higher than 6.0KV of a common three-layer insulated wire, so that the requirement of a 5G product on voltage resistance of more than 20KV is met.
Drawings
Fig. 1 is a schematic structural view of the present invention;
FIG. 2 is an enlarged partial view of one embodiment of a base insulating layer;
FIG. 3 is an enlarged partial view of another embodiment of a base insulating layer;
FIG. 4 is an enlarged partial view of yet another embodiment of a base insulating layer;
FIG. 5 is a partial enlarged view of one embodiment of a voltage-resistant insulating layer;
fig. 6 is a partially enlarged view of another embodiment of the voltage-resistant insulating layer;
fig. 7 is a partially enlarged view of still another embodiment of the voltage-resistant insulating layer;
FIG. 8 is an enlarged partial view of one embodiment of a shield dielectric layer;
FIG. 9 is an enlarged partial view of another embodiment of a shield dielectric layer;
FIG. 10 is an enlarged partial view of yet another embodiment of a shield dielectric layer;
FIG. 11 is an enlarged partial view of one embodiment of a wear-resistant insulation layer;
FIG. 12 is an enlarged partial view of another embodiment of the wear resistant insulation layer;
fig. 13 is an enlarged view of a portion of yet another embodiment of a wear resistant insulation layer.
Detailed Description
The present invention will be described in detail below with reference to the accompanying drawings and specific embodiments.
Referring to fig. 1, the present invention provides a heat-resistant FIW completely insulated wire, including: the cable comprises a conductor 10, a base insulating layer 20 coated on the surface of the conductor 10, a voltage-resistant insulating layer 30 coated on the base insulating layer 20, a shielding insulating layer 40 coated on the voltage-resistant insulating layer 30, and a wear-resistant insulating layer 50 coated on the shielding insulating layer 40.
Referring to fig. 2, in the present embodiment, the base insulating layer 20 includes: the insulating layer comprises a first polyurethane material layer 21, a first polytetrafluoroethylene material layer 22, a polyolefin elastomer layer 23 and a first ethylene bis-stearamide material layer 24, wherein the first polyurethane material layer 21, the first polytetrafluoroethylene material layer 22, the polyolefin elastomer layer 23 and the first ethylene bis-stearamide material layer 24 are overlapped with one another to form the base insulating layer 20.
Referring to fig. 3, in the present embodiment, the base insulating layer 20 includes: the insulating layer comprises a first polyurethane material layer 21, a first polytetrafluoroethylene material layer 22, a polyolefin elastomer layer 23 and a first ethylene bis-stearamide material layer 24, wherein the first polyurethane material layer 21, the first polytetrafluoroethylene material layer 22, the polyolefin elastomer layer 23 and the first ethylene bis-stearamide material layer 24 are spliced with one another to form the basic insulating layer 20.
Referring to fig. 4, in the present embodiment, the base insulating layer 20 includes: the first polyurethane material layer 21, the first polytetrafluoroethylene material layer 22, the polyolefin elastomer layer 23 and the first ethylene bis-stearamide material layer 24 are spliced and overlapped with each other to form the base insulating layer 20.
Referring to fig. 5, in the present embodiment, the voltage-resistant insulating layer 30 includes: the second polyurethane material layer 31, the second polytetrafluoroethylene material layer 32, the zinc oxide material layer 33, the first modified polytetrafluoroethylene material layer 34, and the second ethylene bis-stearamide material layer 35 are stacked on each other to form the pressure-resistant insulating layer 30.
Referring to fig. 6, in the present embodiment, the voltage-resistant insulating layer 30 includes: the second polyurethane material layer 31, the second polytetrafluoroethylene material layer 32, the zinc oxide material layer 33, the first modified polytetrafluoroethylene material layer 34, and the second ethylene bis-stearamide material layer 35 are spliced with each other to form the pressure-resistant insulating layer 30.
Referring to fig. 7, in the present embodiment, the voltage-resistant insulating layer 30 includes: the second polyurethane material layer 31, the second polytetrafluoroethylene material layer 32, the zinc oxide material layer 33, the first modified polytetrafluoroethylene material layer 34 and the second ethylene bis-stearamide material layer 35 are spliced and overlapped with each other to form the pressure-resistant insulating layer 30.
Referring to fig. 8, in the present embodiment, the shielding insulating layer 40 includes: the shielding layer comprises a third polyurethane material layer 41, a third polytetrafluoroethylene material layer 42, a shielding material layer 43, a second modified polytetrafluoroethylene material layer 44 and a third ethylene bis-stearamide material layer 45, wherein the third polyurethane material layer 41, the third polytetrafluoroethylene material layer 42, the shielding material layer 43, the second modified polytetrafluoroethylene material layer 44 and the third ethylene bis-stearamide material layer 45 are mutually overlapped to form a shielding insulating layer 40.
Referring to fig. 9, in the present embodiment, the shielding insulating layer 40 includes: the shielding layer comprises a third polyurethane material layer 41, a third polytetrafluoroethylene material layer 42, a shielding material layer 43, a second modified polytetrafluoroethylene material layer 44 and a third ethylene bis-stearamide material layer 45, wherein the third polyurethane material layer 41, the third polytetrafluoroethylene material layer 42, the shielding material layer 43, the second modified polytetrafluoroethylene material layer 44 and the third ethylene bis-stearamide material layer 45 are spliced with one another to form the shielding insulating layer 40.
Referring to fig. 10, in the present embodiment, the shielding insulating layer 40 includes: the shielding layer comprises a third polyurethane material layer 41, a third polytetrafluoroethylene material layer 42, a shielding material layer 43, a second modified polytetrafluoroethylene material layer 44 and a third ethylene bis-stearamide material layer 45, wherein the third polyurethane material layer 41, the third polytetrafluoroethylene material layer 42, the shielding material layer 43, the second modified polytetrafluoroethylene material layer 44 and the third ethylene bis-stearamide material layer 45 are spliced and overlapped with each other to form the shielding insulating layer 40.
Referring to fig. 11, in the present embodiment, the wear-resistant insulating layer 50 includes: the wear-resistant insulating layer 50 is formed by mutually overlapping a nylon polyurethane paint 51, a fourth polytetrafluoroethylene material layer 52, a third modified polytetrafluoroethylene material layer 53, a silicon dioxide layer 54 and a fourth ethylene bis-stearamide material layer 55.
Referring to fig. 12, in the present embodiment, the wear-resistant insulating layer 50 includes: the wear-resistant insulating layer 50 is formed by mutually splicing a nylon polyurethane paint 51, a fourth polytetrafluoroethylene material layer 52, a third modified polytetrafluoroethylene material layer 53, a silicon dioxide layer 54 and a fourth ethylene bis-stearamide material layer 55.
Referring to fig. 13, in the present embodiment, the wear-resistant insulating layer 50 includes: the wear-resistant insulating layer 50 is formed by mutually overlapping and splicing a nylon polyurethane paint 51, a fourth polytetrafluoroethylene material layer 52, a third modified polytetrafluoroethylene material layer 53, a silicon dioxide layer 54 and a fourth ethylene bis-stearamide material layer 55.
The base insulating layer 20 can coat the surface of the conductor 10, and can coat the pits and the bulges on the surface of the conductor 10 to provide a base insulating effect; strengthen the insulating layer cladding on basic insulating layer 20 surface, further strengthen the insulated wire effect, shielding insulating layer 40 when providing the shielding effect, further strengthen the insulating effect, wear-resisting insulating layer 50 when strengthening insulating effect provides wear-resisting performance, reducing wear. The high-temperature-resistant polytetrafluoroethylene material layers are added into the basic insulating layer 20, the reinforcing insulating layer, the shielding insulating layer 40 and the wear-resistant insulating layer 50, so that the high-temperature resistance of the heat-resistant FIW completely-insulated wire can be effectively enhanced, and the application requirement of a 5G product is met.
In this embodiment, the number of layers of the material layer in the base insulating layer 20 may be: 3-5 layers, the thickness of each material layer is: 1-2 μm; the thickness of the material layer in the voltage-resistant insulating layer 30 is as follows: 10-40 layers, wherein the thickness of each material layer is as follows: 1-2 μm; the thicknesses of the 40 material layers of the shielding insulating layer are as follows: 5-20 layers, the thickness of each layer of material is: 1-2 μm; the number of the material layers in the wear-resistant insulating layer 50 is 3-10, and the thickness of each material layer is as follows: 1-2 μm. The multi-layer structure can remove the defects of concave pits and convex lamps caused by a single-layer structure.
The conductor 10 is copper metal, and the shielding material layer 43 is a shielding metal paint layer.
To sum up, the utility model provides a but heat-resisting type FIW complete insulated wire is through increasing the polytetrafluoroethylene material layer with high temperature resistance in basic insulation layer, withstand voltage insulating layer, shielding insulation layer, wear-resisting insulating layer to promote the high temperature resistance performance of heat-resisting type FIW complete insulated wire.
The above description is only exemplary of the present invention and should not be construed as limiting the present invention, and any modifications, equivalents and improvements made within the spirit and principles of the present invention are intended to be included within the scope of the present invention.