CN212542417U - Power semiconductor radiator - Google Patents
Power semiconductor radiator Download PDFInfo
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- CN212542417U CN212542417U CN202022185167.3U CN202022185167U CN212542417U CN 212542417 U CN212542417 U CN 212542417U CN 202022185167 U CN202022185167 U CN 202022185167U CN 212542417 U CN212542417 U CN 212542417U
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- metal
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- radiator
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 20
- 239000010432 diamond Substances 0.000 claims abstract description 64
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 62
- 229910052751 metal Inorganic materials 0.000 claims abstract description 40
- 239000002184 metal Substances 0.000 claims abstract description 40
- 239000002905 metal composite material Substances 0.000 claims abstract description 35
- 230000017525 heat dissipation Effects 0.000 abstract description 17
- 239000000463 material Substances 0.000 abstract description 12
- 239000002245 particle Substances 0.000 abstract description 10
- 239000011159 matrix material Substances 0.000 abstract description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 7
- 229910052802 copper Inorganic materials 0.000 abstract description 7
- 239000010949 copper Substances 0.000 abstract description 7
- 229910001316 Ag alloy Inorganic materials 0.000 abstract description 6
- 229910000838 Al alloy Inorganic materials 0.000 abstract description 6
- 229910000881 Cu alloy Inorganic materials 0.000 abstract description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052709 silver Inorganic materials 0.000 abstract description 6
- 239000004332 silver Substances 0.000 abstract description 6
- 238000004806 packaging method and process Methods 0.000 abstract description 5
- 230000008646 thermal stress Effects 0.000 abstract description 5
- 238000009826 distribution Methods 0.000 abstract description 3
- 239000005022 packaging material Substances 0.000 abstract description 2
- 230000008595 infiltration Effects 0.000 description 5
- 238000001764 infiltration Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 239000011156 metal matrix composite Substances 0.000 description 3
- 238000012858 packaging process Methods 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- INZDTEICWPZYJM-UHFFFAOYSA-N 1-(chloromethyl)-4-[4-(chloromethyl)phenyl]benzene Chemical compound C1=CC(CCl)=CC=C1C1=CC=C(CCl)C=C1 INZDTEICWPZYJM-UHFFFAOYSA-N 0.000 description 2
- QIJNJJZPYXGIQM-UHFFFAOYSA-N 1lambda4,2lambda4-dimolybdacyclopropa-1,2,3-triene Chemical compound [Mo]=C=[Mo] QIJNJJZPYXGIQM-UHFFFAOYSA-N 0.000 description 2
- 229910052580 B4C Inorganic materials 0.000 description 2
- 229910039444 MoC Inorganic materials 0.000 description 2
- 229910026551 ZrC Inorganic materials 0.000 description 2
- OTCHGXYCWNXDOA-UHFFFAOYSA-N [C].[Zr] Chemical compound [C].[Zr] OTCHGXYCWNXDOA-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- UFGZSIPAQKLCGR-UHFFFAOYSA-N chromium carbide Chemical compound [Cr]#C[Cr]C#[Cr] UFGZSIPAQKLCGR-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910001338 liquidmetal Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- UNASZPQZIFZUSI-UHFFFAOYSA-N methylidyneniobium Chemical compound [Nb]#C UNASZPQZIFZUSI-UHFFFAOYSA-N 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- 238000012536 packaging technology Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910003470 tongbaite Inorganic materials 0.000 description 2
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- -1 i.e. Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
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Abstract
The utility model discloses a power semiconductor radiator belongs to electron packaging material technical field. The radiator consists of a first diamond/metal composite layer, a second diamond/metal composite layer and a metal radiating layer which are connected by metal and are integrally formed; the first diamond/metal composite layer and the second diamond/metal composite layer are respectively composed of diamond particles with volume contents of 40% -80% and 10% -40%, a metal matrix and a carbide interface layer between the metal matrix and the metal matrix, the metal matrix is one of copper, copper alloy, aluminum alloy, silver and silver alloy, and the metal radiator is made of the same material as the metal matrix and is provided with radiating fins. The utility model discloses a thermal expansion coefficient has simplified packaging structure and technology at the gradient distribution of heat dissipation route direction, has avoided the thermal stress problem between heat sink and the radiator, has eliminated the interface thermal resistance between heat sink and the radiator to power semiconductor device's heat-sinking capability, reliability and stability of quality have been promoted.
Description
Technical Field
The utility model relates to a power semiconductor radiator especially relates to a power semiconductor radiator that coefficient of thermal expansion gradient distributes, belongs to electron packaging material technical field.
Background
Power semiconductor devices play an increasingly important role in national production and life, and are widely used in the fields of electric power, rail transit, laser, display, lighting, electric vehicles and the like. Particularly, the rise of the third generation semiconductor materials has increasingly strict requirements on heat dissipation of devices. The conventional power semiconductor package structure generally includes a chip, leads, a package substrate, a heat sink, and a heat spreader. Except that the leads are respectively connected with the chip and the circuit layer of the packaging substrate in a routing mode, the rest parts are connected by a thermal interface material in a soldering or bonding mode.
However, the thermal expansion coefficients of the package substrate and the heat sink material generally need to match the thermal expansion coefficient of the semiconductor chip, and the heat spreader generally adopts copper and aluminum materials with lower cost and larger expansion coefficient, which causes the mismatch of the thermal expansion coefficients between the heat sink and the heat spreader, and generates a thermal stress that cycles back and forth due to the change of temperature during the operation of the device, thus seriously threatening the reliability of the device; meanwhile, the more the joints are connected, the more thermal interfaces are, and the interfaces in various forms have larger interface thermal resistance, so that the heat dissipation of the power semiconductor device is very adverse, and the output power and the service life of the device are influenced; in addition, the more joints that are connected, the more adverse factors that are brought to the consistency of the packaging process, and the more challenging the quality stability of the packaged product.
Diamond/metal composites, i.e., diamond particle reinforced metal matrix composites such as diamond copper, diamond aluminum, diamond silver, etc., have recently received extensive attention and research in academia and industry due to their thermal conductivity as high as 400W/mK or more. However, the research focus in the field of diamond/metal composite materials focuses on improving and enhancing the wettability of the metal substrate to the diamond surface, and the research on specific packaging technology and process is very little, and the characteristics of the materials are not fully exerted to a certain extent.
Disclosure of Invention
The utility model aims at solving the thermal stress problem that thermal expansion coefficient mismatch and produced between present heat sink material and the radiator, simplifying packaging structure and packaging technology, reducing connection interface, promoting power semiconductor device's heat-sinking capability to promote reliability and stability of quality.
In order to solve the technical problem, the utility model discloses a technical scheme is: a power semiconductor radiator comprises a first diamond/metal composite layer (1), a second diamond/metal composite layer (2) and a metal radiating layer (3), wherein the second diamond/metal composite layer (2) is located between the first diamond/metal composite layer (1) and the metal radiating layer (3), and the first diamond/metal composite layer, the second diamond/metal composite layer and the metal radiating layer are connected through metal and are integrally formed.
The first diamond/metal composite layer (1) is a diamond particle reinforced metal matrix composite material, the volume fraction of the diamond is 40% -80%, the particle size is 10-500 mu m, the metal is one of copper, copper alloy, aluminum alloy, silver and silver alloy, a carbide layer with the thickness of 1-5000 nm is arranged between the diamond particles and a metal matrix, and the carbide is one or more of titanium carbide, chromium carbide, tungsten carbide, zirconium carbide, niobium carbide, vanadium carbide, silicon carbide, boron carbide and molybdenum carbide.
The second diamond/metal composite layer (2) is a diamond particle reinforced metal matrix composite material, the volume fraction of the diamond is 10% -40%, the particle size is 10-500 mu m, the metal is one of copper, copper alloy, aluminum alloy, silver and silver alloy, a carbide layer with the thickness of 1-5000 nm is arranged between the diamond particles and the metal matrix, and the carbide is one or more of titanium carbide, chromium carbide, tungsten carbide, zirconium carbide, niobium carbide, vanadium carbide, silicon carbide, boron carbide and molybdenum carbide.
The metal heat dissipation layer (3) is made of one of copper, copper alloy, aluminum alloy, silver and silver alloy, and is provided with heat dissipation fins (31); when the metal heat dissipation layer (3) is a copper alloy, an aluminum alloy or a silver alloy, the alloy elements are one or more of Ti, Cr, W, Zr, B, Si, Mo, Nb, V, RE, Te, Se, Li and Fe, and the total content of the alloy elements is 0.01-5.50%.
The metal in the first diamond/metal composite layer (1), the metal in the second diamond/metal composite layer (2) and the metal in the metal heat dissipation layer (3) are the same metal or alloy.
The composite heat sink material with the gradient distribution of the thermal expansion coefficient, which is designed by the utility model, realizes the matching of the thermal expansion coefficient of one side of the first diamond/metal composite layer with the thermal expansion coefficient of the semiconductor chip material or the ceramic substrate by combining the diamond/metal composite layers with different diamond contents and the metal heat dissipation layer; the metal heat dissipation layer is made of metal materials, has the characteristic of easy processing and can be directly used as a radiator; the second diamond/metal composite layer with the thermal expansion coefficient between the first diamond/metal composite layer and the metal heat dissipation layer can effectively relieve the larger thermal stress between the first diamond/metal composite layer and the metal heat dissipation layer caused by the larger difference of the thermal expansion coefficients, and achieves the effect of gradient distribution of the thermal expansion coefficients in the direction of a heat dissipation path, thereby simplifying the packaging structure and the packaging process, also avoiding the problem of the thermal stress between a heat sink and a radiator in the traditional packaging structure, eliminating the interface thermal resistance between the heat sink and the radiator, further improving the heat dissipation capability of the power semiconductor device, and further improving the reliability and the quality stability.
Drawings
Fig. 1 is a schematic structural diagram of a power semiconductor heat sink.
Description of reference numerals: 1-a first diamond/metal composite layer; 2-a second diamond/metal composite layer; 3-metal heat dissipation layer; 31-radiating fin.
Detailed Description
The power semiconductor heat sink of the present invention will be described in detail with reference to the accompanying drawings and embodiments.
The process comprises the following steps: in the first step, diamond preforms with different volume contents are prepared: respectively plating one or more layers of titanium, chromium, tungsten, zirconium, niobium, vanadium, silicon, boron and molybdenum on the surfaces of diamonds with one or more particle sizes to serve as interface layers, then respectively and uniformly mixing a binder and different numbers of coated diamonds, and then performing compression molding to obtain a first pressed compact and a second pressed compact with diamond volume contents of 40% -80% and 10% -40%, and then respectively drying at 50-300 ℃ for degreasing and strengthening to obtain a first diamond preform and a second diamond preform which have different volume fractions and certain strength; and step two, infiltration: putting a second diamond preform into an infiltration mold in the sequence of the second diamond preform below and the first diamond preform above, wherein the height of an inner cavity of the mold is greater than the sum of the thicknesses of the two diamond preforms, and then infiltrating one of molten copper, copper alloy, aluminum alloy, silver and silver alloy into the first diamond preform and the second diamond preform in the infiltration mold by using a capillary action under the action of no pressure or air pressure or mechanical pressure, wherein the diamond preforms float upwards due to the density of less than that of liquid metal, a pure liquid metal area is left at the bottom end of the infiltration mold, and meanwhile, a film plated on the surface of the diamond undergoes a chemical reaction at high temperature to generate a corresponding carbide layer; step three, cooling and demolding: cooling and demoulding after full permeation, taking out the infiltration product, polishing and cleaning; fourthly, manufacturing radiating fins: and (3) machining the metal heat dissipation layer (3) by wire electrode cutting to obtain the heat radiator with the heat dissipation fins (31).
According to the above process, different diamond particle sizes and volume fractions thereof, carbide layers between diamond and metal matrix and thicknesses thereof, and materials of metal heat dissipation layers were set, respectively, to obtain examples 1 to 4 in table 1. The manufactured power semiconductor radiator is composed of a first diamond/metal composite layer (1), a second diamond/metal composite layer (2) and a metal radiating layer (3) with radiating fins (31), wherein the second diamond/metal composite layer is positioned between the first diamond/metal composite layer and the metal radiating layer, and the first diamond/metal composite layer, the second diamond/metal composite layer and the metal radiating layer are connected through metal and are integrally formed. The power semiconductor radiators obtained in examples 1 to 4 were qualitatively evaluated for necessity of connection between a heat sink and the radiator, heat conductivity of the radiator, and reliability, and the evaluation results are shown in table 1.
Table 1 parameter settings and implementation effects of examples 1 to 4.
The above, it is only the preferred embodiment of the utility model, it is not right the utility model discloses do any restriction, all according to the utility model discloses any simple modification, change and the equivalent structure change that the technical entity was done to above embodiment all still belong to the utility model discloses technical scheme's within the scope of protection.
Claims (1)
1. A power semiconductor radiator is characterized by comprising a first diamond/metal composite layer, a second diamond/metal composite layer and a metal radiating layer, wherein the second diamond/metal composite layer is positioned between the first diamond/metal composite layer and the metal radiating layer, and the first diamond/metal composite layer, the second diamond/metal composite layer and the metal radiating layer are connected through metal and are integrally formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022185167.3U CN212542417U (en) | 2020-09-29 | 2020-09-29 | Power semiconductor radiator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022185167.3U CN212542417U (en) | 2020-09-29 | 2020-09-29 | Power semiconductor radiator |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN212542417U true CN212542417U (en) | 2021-02-12 |
Family
ID=74527251
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202022185167.3U Expired - Fee Related CN212542417U (en) | 2020-09-29 | 2020-09-29 | Power semiconductor radiator |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN212542417U (en) |
-
2020
- 2020-09-29 CN CN202022185167.3U patent/CN212542417U/en not_active Expired - Fee Related
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| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20210212 |
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| CF01 | Termination of patent right due to non-payment of annual fee |