CN212539415U - Infrared color detector based on super surface - Google Patents
Infrared color detector based on super surface Download PDFInfo
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- CN212539415U CN212539415U CN202022011969.2U CN202022011969U CN212539415U CN 212539415 U CN212539415 U CN 212539415U CN 202022011969 U CN202022011969 U CN 202022011969U CN 212539415 U CN212539415 U CN 212539415U
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Abstract
The patent discloses an infrared color detector based on super surface through place a echelon grating array with super surface preparation above infrared detector, makes the infrared light take place the diffraction after permeating super surface array, falls into short, medium, long wave infrared light in different direction angles, then shines on the infrared detector that can survey different wave bands, is the colored RGB signal with the signal definition that receives on the infrared detector, synthesizes color image at last. The detector has the advantages of high light transmittance, good color separation performance, high detection efficiency and capability of generating a color image by utilizing an infrared band.
Description
Technical Field
The patent relates to infrared focal plane detection technology, in particular to design and preparation technology of a multicolor infrared focal plane.
Background
The multi-color infrared detector is the development direction of a new generation of infrared detectors, has the characteristic of wide detection spectrum width, and can detect, compare and process multi-band spectrums. One of the core technologies for fabricating multicolor infrared detectors is the separation and absorption of multiband spectra. For multi-color infrared detectors, methods are generally used in which infrared light of different wavelength bands is absorbed and detected by different absorption regions, respectively, as described in A.Rogalski, J.Antoszewski, et al.third-generation in front of photodetector arrays [ J ]. Journal of Applied Physics, USA: American Institute of Physics,2009.105 (091101).
For a polychromatic infrared detector, the absorption regions of different wavebands typically use a stacked structure, see fig. 2. The vertical distribution of different absorption regions can cause that the component doping is difficult to control in the manufacturing process and the etching damage is large, which is seen in Yangjiarong physical and technology of HgCdTe material [ M ]. Beijing, national defense industry Press, 2012.430-434. Inaccurate doping of each layer component and large etching damage can cause the problems of shift of detection wavelength, reduction of detection rate and the like. The more layers, the higher the process difficulty.
Disclosure of Invention
The present invention has been made to solve the above problems, and an object of the present invention is to provide a super-surface infrared color detector capable of separating infrared light according to wavelength and detecting and absorbing infrared light of corresponding wavelength by using different regions in planar infrared detection.
In order to achieve the purpose, the following scheme is adopted:
a super-surface based infrared color detector is shown in figure 1, and comprises a super-surface array structure 1 and a planar structure infrared detector 2, and is characterized in that:
the super-surface array structure 1 is arranged above the plane structure infrared detector 2; infrared light mixed by multiple wavelengths is vertically incident to the super-surface array structure 1, and the refraction angle of the emergent light is related to the wavelength; the refracted light with different wavelengths deflects to the corresponding area of the infrared detector 2 with a planar structure; the short wave light is defined as blue light in color synthesis, the medium wave light is defined as green light in color synthesis, the long wave light is defined as red light in color synthesis, and the three beams of light are synthesized into a color image through a computer technology.
Further, the infrared color detector based on the super surface is shown in fig. 1, and is characterized in that: the super-surface array structure 1 is made of infrared optical materials.
Further, the infrared color detector based on the super surface is shown in fig. 1, and is characterized in that:
the refraction angle theta of the super-surface array structure 1 to different wavelengthstAre each determined by:
in the formula, thetaiDenotes the angle of incidence, θtRepresenting angle of refraction, niIs the refractive index of the incident medium, ntIs a super surface array structure 1 refractive index, lambda0Which represents the wavelength of the light emitted by the light source,
representing a super-surface array structure 1 pairλ0The phase gradient of (a); the super-surface array structure 1 has different phase gradients for different wavelengths of incident light.
Further, the infrared color detector based on the super surface is characterized in that: the areas of different wave bands in the plane structure infrared detector 2 correspond to the infrared light wave bands separated after penetrating through the super surface array structure 1 one by one, and the areas are periodically arranged and the period size is adjustable.
This patent beneficial effect:
the utility model provides a pair of infrared color detector based on super surface has the advantages that miniaturization, transmissivity are high, and super surface array structure 1 can separate the infrared light that the multi-wavelength was mixed on the exit space, and different refraction angles are corresponded to different wavelength infrared light.
The planar structure infrared detector has the advantages of simple structure and mature process, can detect multiband infrared light only by a planar device, and does not need to prepare a complicated laminated structure infrared detector.
Drawings
FIG. 1 is a cross-sectional view of a super-surface-based infrared color detector structure, in which 1 is a super-surface array structure, and 2 is a planar infrared detector structure
Fig. 2 is a schematic diagram of a conventional polychromatic infrared detector. Wherein 1 is a long-wave infrared light absorption layer, 2 is a medium-wave infrared light absorption layer, and 3 is a short-wave infrared light absorption layer.
Detailed Description
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present patent. This patent is capable of embodiments in many different forms and should not be construed as limited to the embodiments set forth herein but are to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Fig. 1 shows the structure of a super-surface based infrared color detector.
As shown in FIG. 1, the infrared color detector structure based on a super surface provided by the patent example comprises a super surface array structure 1 and a planar infrared detector 2. The super surface array structure 1 is made of amorphous silicon and quartz. The amorphous silicon is manufactured into four nano cylinders with the height of 2 mu m and the radiuses of 180nm, 270nm, 320nm and 390nm respectively, the four nano cylinders are sequentially arranged and periodically distributed on a quartz substrate to form the super-surface array structure 1.
After infrared light passes through the super-surface array structure 1, phase change is generated, and different wavelengths have different phase gradients. The mixed infrared light with the wavelength of 2.8 μm, 3 μm and 3.3 μm is vertically incident to the super-surface array structure 1 with the refraction angle thetatThe formula of (1) is:
θidenotes the angle of incidence, θtRepresenting angle of refraction, niIs the refractive index of the incident medium, ntIs a super surface array structure 1 refractive index, lambda0Which represents the wavelength of the light emitted by the light source,
representing a super-surface array structure 1 pair lambda0The phase gradient of (a).
The refraction angle theta of infrared light with the wavelength of 2.8 mu m can be obtained by the formulat44.4 DEG, and an infrared refraction angle theta of 3 mu mtIs-6.86 degrees and has an infrared refraction angle theta of 3.3 mu mtIs-16.8 degrees.
Refracted light with the wavelength of 2.8 microns irradiates on a short wave absorption area of the plane structure infrared detector 2, refracted light with the wavelength of 3 microns irradiates on a medium wave absorption area of the plane structure infrared detector 2, and refracted light with the wavelength of 3.3 microns irradiates on a long wave absorption area of the plane structure infrared detector 2. Infrared light having a wavelength of 2.8 μm is defined as blue light in color synthesis, infrared light having a wavelength of 3 μm is defined as green light in color synthesis, infrared light having a wavelength of 3.3 μm is defined as red light in color synthesis, and the three beams of light are synthesized into a color image by computer technology.
Absorption regions of different wave bands in the planar structure infrared detector 2 correspond to the infrared light wave bands separated after penetrating through the super-surface array structure 1 one by one, the regions are periodically arranged, and the size of a single wave band absorption region is 10 micrometers multiplied by 30 micrometers.
Fig. 2 shows the structure of a conventional multicolor infrared detector. The illustrated structure includes: short-wave infrared light absorption layer 3, medium-wave infrared light absorption layer 2, and long-wave infrared light absorption layer 1. Infrared light of different wavelengths is absorbed in different absorbing layers of the stack. Considering the loss of the duty ratio and the signal sensitivity of the traditional multicolor infrared detector, the infrared color detector based on the super surface has the advantages of good color separation performance, high light transmittance, capability of reducing light loss and improvement of the signal sensitivity, and is reasonable.
The above description is only for the specific embodiments of the present patent, but the protection scope of the present patent is not limited thereto, and any person skilled in the art can easily think of the changes or substitutions, and shall be covered by the protection scope of the present patent. Therefore, the protection scope of this patent shall be subject to the protection scope of the claims.
Claims (3)
1. A super-surface-based infrared color detector comprises a super-surface array structure (1) and a planar structure infrared detector (2), and is characterized in that:
the super-surface array structure (1) is arranged above the plane structure infrared detector (2); infrared light mixed by multiple wavelengths is vertically incident to the super-surface array structure (1), and the refraction angle of emergent light is related to the wavelength; refraction light with different wavelengths deflects to the corresponding area of the plane structure infrared detector (2); the short wave light is defined as blue light in color synthesis, the medium wave light is defined as green light in color synthesis, the long wave light is defined as red light in color synthesis, and the three beams of light are synthesized into a color image through a computer technology.
2. A super-surface based infrared color detector as claimed in claim 1, wherein:
the super-surface array structure (1) is an infrared optical material array structure and has refraction angles theta of different wavelengthstAre each determined by:
in the formula, thetaiDenotes the angle of incidence, θtRepresenting angle of refraction, niIs the refractive index of the incident medium, ntIs a super surface array structure (1) refractive index, lambda0Which represents the wavelength of the light emitted by the light source,
represents a super surface array structure (1) to lambda0The phase gradient of (a).
3. A super-surface based infrared color detector as claimed in claim 1, wherein: the areas of different wave bands in the plane structure infrared detector (2) correspond to the infrared wave bands separated after penetrating through the super surface array structure (1) one by one, and the areas are arranged periodically and the period size is adjustable.
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| CN2019110936928 | 2019-11-11 | ||
| CN201911093692.8A CN110823377A (en) | 2019-11-11 | 2019-11-11 | Infrared pseudo-color detector based on super surface |
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| CN202022011969.2U Active CN212539415U (en) | 2019-11-11 | 2020-09-15 | Infrared color detector based on super surface |
| CN202010965538.1A Pending CN112013956A (en) | 2019-11-11 | 2020-09-15 | Infrared color detector based on super surface |
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| CN113465736A (en) * | 2021-06-30 | 2021-10-01 | 中国电子科技集团公司信息科学研究院 | On-chip integrated infrared detector |
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| CN113299671B (en) * | 2021-03-11 | 2022-02-18 | 中国科学院上海技术物理研究所 | Infrared color focal plane detector of in-situ integrated super-surface phased array |
| WO2023015654A1 (en) * | 2021-08-13 | 2023-02-16 | 中国科学院上海技术物理研究所 | Spectrally separated and fully transparent composite superpixel infrared detector |
| CN115174794B (en) * | 2022-08-11 | 2023-09-22 | 哈尔滨工业大学（深圳） | Double-light fusion imaging chip and double-light picture fusion processing method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113465736A (en) * | 2021-06-30 | 2021-10-01 | 中国电子科技集团公司信息科学研究院 | On-chip integrated infrared detector |
| CN113465736B (en) * | 2021-06-30 | 2023-08-11 | 中国电子科技集团公司信息科学研究院 | On-chip integrated infrared detector |
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