CN212391570U - Withstand voltage testing device of discrete semiconductor device - Google Patents
Withstand voltage testing device of discrete semiconductor device Download PDFInfo
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- CN212391570U CN212391570U CN202020977963.8U CN202020977963U CN212391570U CN 212391570 U CN212391570 U CN 212391570U CN 202020977963 U CN202020977963 U CN 202020977963U CN 212391570 U CN212391570 U CN 212391570U
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- withstand voltage
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Abstract
The utility model discloses a withstand voltage testing device of a discrete semiconductor device, which comprises a bottom component and an adjusting component, wherein the adjusting component is fixedly arranged at the top of the bottom component; the bottom assembly comprises a shell, a pressure-resistant testing device main body is fixedly mounted at the bottom of the inner wall of the shell, an operating panel is fixedly mounted at the right side of the shell, and a central pin insert block is fixedly mounted at the middle point of the top of the shell. The utility model discloses a mutually supporting of bottom subassembly and adjusting part for the withstand voltage testing arrangement of semiconductor discrete device conveniently adjusts the interval between two side pin inserted blocks, just so can go to carry out withstand voltage test to the semiconductor discrete device of different grade type well, still promoted the antidetonation effect of withstand voltage testing arrangement of semiconductor discrete device, effectively avoid the components and parts in the withstand voltage testing arrangement of semiconductor discrete device to damage because of vibrations, the practicality is high, is fit for using widely.
Description
Technical Field
The utility model relates to a discrete semiconductor device tests technical field, specifically is a withstand voltage testing arrangement of discrete semiconductor device.
Background
The semiconductor discrete device generally refers to a semiconductor crystal diode, a semiconductor triode, a triode and a special semiconductor device, the existing semiconductor discrete device needs to be subjected to electrical performance tests in all aspects before leaving a factory, a withstand voltage testing device of the existing semiconductor discrete device is inconvenient to adjust the distance between pin connecting pieces, withstand voltage tests cannot be well performed on different types of semiconductor discrete devices, and the withstand voltage testing device of the existing semiconductor discrete device is unsatisfactory in shock resistance and low in practicability.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide a withstand voltage testing arrangement of discrete device of semiconductor to solve the problem that proposes in the background art.
In order to achieve the above object, the utility model provides a following technical scheme: the pressure-resistant testing device for the semiconductor discrete device comprises a bottom assembly and an adjusting assembly, wherein the adjusting assembly is fixedly arranged at the top of the bottom assembly;
the bottom assembly comprises a shell, a pressure resistance testing device main body is fixedly mounted at the bottom of the inner wall of the shell, an operation panel is fixedly mounted at the right side of the shell, a central pin insert block is fixedly mounted at the midpoint of the top of the shell, side pin insert blocks are arranged on the left side and the right side of the top of the shell, a damping plate is arranged below the shell, damping shells are fixedly mounted in grooves on the left side and the right side of the top of the damping plate, a movable plate is connected to the inner wall of the damping shell in a sliding manner, a damping rod is fixedly connected to the top of the movable plate, the top end of the damping rod penetrates through the damping shells and extends to the outside of the damping shells to be fixedly connected with the bottom of the shell, damping springs are fixedly connected to the left side and the right side of the;
the adjusting part comprises a fixed plate fixedly mounted on the left side of the top of the shell, a threaded rod is fixedly mounted in a groove on the right side of the fixed plate through a bearing, a right end fixedly connected with handle of the threaded rod is connected with a movable plate through threads, the left side and the right side of the surface of the threaded rod are connected with movable plates through threads, the movable plates are close to one side fixedly connected with connecting rods of side pin inserting blocks, one side fixedly connected with connecting blocks far away from the fixed plate are arranged on the connecting rods, and one side of each connecting block, which.
Preferably, the shock absorption rod is movably connected with the shock absorption shell.
Preferably, the surface of the bearing outer ring is fixedly connected with the fixing plate, and the inner wall of the bearing inner ring is fixedly connected with the surface of the threaded rod.
Preferably, a bearing seat is movably mounted on the right side of the surface of the threaded rod, and the bottom of the bearing seat is fixedly connected with the top of the shell.
Compared with the prior art, the beneficial effects of the utility model are as follows:
1. the utility model discloses a mutually supporting of bottom subassembly and adjusting part for the withstand voltage testing arrangement of semiconductor discrete device conveniently adjusts the interval between two side pin inserted blocks, just so can go to carry out withstand voltage test to the semiconductor discrete device of different grade type well, still promoted the antidetonation effect of withstand voltage testing arrangement of semiconductor discrete device, effectively avoid the components and parts in the withstand voltage testing arrangement of semiconductor discrete device to damage because of vibrations, the practicality is high, is fit for using widely.
2. The utility model discloses a set up the bearing frame, played the effect of firm threaded rod, avoided the threaded rod to take place to buckle because of bearing more weight.
Drawings
FIG. 1 is a structural section view in elevation of the present invention;
fig. 2 is a structural section view of a top view of the present invention.
In the figure: 1 bottom component, 101 shell, 102 pressure resistance test device body, 103 operation panel, 104 center pin plug block, 105 side pin plug block, 106 shock absorption plate, 107 shock absorption shell, 108 movable plate, 109 shock absorption rod, 110 shock absorption spring, 2 adjustment component, 201 fixed plate, 202 bearing, 203 threaded rod, 204 handle, 205 movable plate, 206 connecting rod, 207 connecting block, 3 bearing seat.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
Referring to fig. 1-2, a device for testing withstand voltage of semiconductor discrete devices includes a bottom assembly 1 and an adjusting assembly 2, wherein the adjusting assembly 2 is fixedly mounted on the top of the bottom assembly 1.
The bottom assembly 1 comprises a shell 101, a pressure-resistance testing device main body 102 is fixedly arranged at the bottom of the inner wall of the shell 101, an operation panel 103 is fixedly arranged at the right side of the shell 101, a central pin insert block 104 is fixedly arranged at the midpoint of the top of the shell 101, side pin insert blocks 105 are arranged at the left side and the right side of the top of the shell 101, the central pin insert block 104 is electrically connected with the pressure-resistance testing device main body 102, the side pin insert blocks 105 are electrically connected with the pressure-resistance testing device main body 102, the side pin insert blocks 105 can be an electric wire capable of being lengthened and shortened and can be connected with the pressure-resistance testing device main body 102 by adopting a conventional base machine, a damping plate 106 is arranged below the shell 101, damping shells 107 are fixedly arranged in grooves at the left side and the right side of the top of the damping plate 106, a movable plate 108 is slidably connected on the inner wall of the damping shells 107, a damping rod 109 is fixedly connected with, the shock absorption rod 109 and the shock absorption shell 107 are movably connected, the shock absorption springs 110 are fixedly connected to the left side and the right side of the bottom of the shell 101, and the bottom ends of the shock absorption springs 110 are fixedly connected with the top of the shock absorption plate 106.
The adjusting assembly 2 comprises a fixed plate 201 fixedly installed on the left side of the top of the shell 101, a threaded rod 203 is fixedly installed in a groove on the right side of the fixed plate 201 through a bearing 202, the surface of an outer ring of the bearing 202 is fixedly connected with the fixed plate 201, the inner wall of an inner ring of the bearing 202 is fixedly connected with the surface of the threaded rod 203, a bearing seat 3 is movably installed on the right side of the surface of the threaded rod 203, the bottom of the bearing seat 3 is fixedly connected with the top of the shell 101, the bearing seat 3 is arranged to play a role of stabilizing the threaded rod 203 and prevent the threaded rod 203 from being bent due to bearing more weight, a handle 204 is fixedly connected to the right end of the threaded rod 203, moving plates 205 are in threaded connection on the left side and the right side of the surface of the threaded rod 203, in actual setting, threads on the surface of the threaded rod, moving plate 205 is close to one side fixedly connected with connecting rod 206 of side pin inserted block 105, one side fixedly connected with connecting block 207 of fixed plate 201 is kept away from to connecting rod 206, connecting block 207 is close to one side and its fixed connection of side pin inserted block 105, through mutually supporting of bottom subassembly 1 and adjusting part 2, make the withstand voltage testing arrangement of discrete semiconductor device conveniently adjust the interval between two side pin inserted blocks 105, just so can go to carry out withstand voltage test to the discrete semiconductor device of different grade type well, the antidetonation effect of the withstand voltage testing arrangement of discrete semiconductor device has still been promoted, effectively avoid the components and parts in the withstand voltage testing arrangement of discrete semiconductor device to damage because of vibrations, therefore, the practicality is high, and the device is suitable for being generalized to use.
During the use, when external vibrations produce, according to the relative motion principle of physics, the fly leaf 108 can carry out relative up-and-down motion with shock attenuation shell 107, damping spring 110 can be stretched or compressed, the good shock attenuation effect has been played, the staff can be through handle 204 rotatory threaded rod 203, threaded rod 203 direction of rotation's difference, can make two movable plates 205 to the direction motion that is close to each other or to the direction motion of keeping away from each other, movable plate 205 can drive connecting block 207 through connecting rod 206 and move, connecting block 207 can drive side pin inserted block 105 and carry out the side-to-side motion, thereby the convenience carries out withstand voltage test to the discrete semiconductor device of different grade type.
In summary, the following steps: the withstand voltage testing device of the semiconductor discrete device solves the problems in the background technology by the mutual matching of the bottom component 1 and the adjusting component 2.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (4)
1. A withstand voltage testing device of a semiconductor discrete device comprises a bottom component (1) and a regulating component (2), and is characterized in that: the adjusting component (2) is fixedly arranged at the top of the bottom component (1);
the bottom assembly (1) comprises a shell (101), a pressure-resistant testing device main body (102) is fixedly mounted at the bottom of the inner wall of the shell (101), an operating panel (103) is fixedly mounted at the right side of the shell (101), a center pin insert block (104) is fixedly mounted at the midpoint of the top of the shell (101), side pin insert blocks (105) are arranged at the left side and the right side of the top of the shell (101), a damping plate (106) is arranged below the shell (101), damping shells (107) are fixedly mounted in grooves at the left side and the right side of the top of the damping plate (106), a movable plate (108) is slidably connected onto the inner wall of the damping shell (107), a damping rod (109) is fixedly connected onto the top of the movable plate (108), the top end of the damping rod (109) penetrates through the damping shell (107) and extends to the bottom of the outside of the damping shell (101, the left side and the right side of the bottom of the shell (101) are fixedly connected with damping springs (110), and the bottom ends of the damping springs (110) are fixedly connected with the tops of the damping plates (106);
adjusting part (2) include fixed mounting at left fixed plate (201) in casing (101) top, there is threaded rod (203) through bearing (202) fixed mounting in the recess on fixed plate (201) right side, the right-hand member fixedly connected with handle (204) of threaded rod (203), the equal threaded connection in the left and right sides on threaded rod (203) surface has movable plate (205), one side fixedly connected with connecting rod (206) that movable plate (205) are close to side pin inserted block (105), one side fixedly connected with connecting block (207) of fixed plate (201) are kept away from in connecting rod (206), one side and its fixed connection that connecting block (207) are close to side pin inserted block (105).
2. A withstand voltage test apparatus of a semiconductor discrete device according to claim 1, characterized in that: the shock absorption rod (109) is movably connected with the shock absorption shell (107).
3. A withstand voltage test apparatus of a semiconductor discrete device according to claim 1, characterized in that: the surface of the outer ring of the bearing (202) is fixedly connected with the fixing plate (201), and the inner wall of the inner ring of the bearing (202) is fixedly connected with the surface of the threaded rod (203).
4. A withstand voltage test apparatus of a semiconductor discrete device according to claim 1, characterized in that: the right side movable mounting on threaded rod (203) surface has bearing frame (3), the top fixed connection of the bottom and casing (101) of bearing frame (3).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020977963.8U CN212391570U (en) | 2020-06-01 | 2020-06-01 | Withstand voltage testing device of discrete semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020977963.8U CN212391570U (en) | 2020-06-01 | 2020-06-01 | Withstand voltage testing device of discrete semiconductor device |
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| Publication Number | Publication Date |
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| CN212391570U true CN212391570U (en) | 2021-01-22 |
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| CN202020977963.8U Active CN212391570U (en) | 2020-06-01 | 2020-06-01 | Withstand voltage testing device of discrete semiconductor device |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113567827A (en) * | 2021-09-26 | 2021-10-29 | 山东元捷电子科技有限公司 | Electrical performance test tool for semiconductor device |
| CN113884867A (en) * | 2021-08-31 | 2022-01-04 | 戴东波 | Electromagnetic relay detection device |
-
2020
- 2020-06-01 CN CN202020977963.8U patent/CN212391570U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113884867A (en) * | 2021-08-31 | 2022-01-04 | 戴东波 | Electromagnetic relay detection device |
| CN113567827A (en) * | 2021-09-26 | 2021-10-29 | 山东元捷电子科技有限公司 | Electrical performance test tool for semiconductor device |
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