CN212375345U - Melting device for vacuum induction melting of high-purity indium - Google Patents
Melting device for vacuum induction melting of high-purity indium Download PDFInfo
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- CN212375345U CN212375345U CN202020989882.XU CN202020989882U CN212375345U CN 212375345 U CN212375345 U CN 212375345U CN 202020989882 U CN202020989882 U CN 202020989882U CN 212375345 U CN212375345 U CN 212375345U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P10/00—Technologies related to metal processing
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Abstract
The utility model discloses a high-purity indium vacuum induction melting uses melt device belongs to metal melting equipment technical field, including quartz crucible and graphite crucible, quartz crucible nestification is in the graphite crucible, the graphite crucible wraps up the graphite blanket outward, the outer wall of graphite blanket is equipped with quartz sand insulating layer, quartz sand insulating layer outer wall is equipped with heating coil, high-purity quartz crucible thickness is 4mm, graphite crucible thickness is 8mm to 10mm, the graphite blanket is thickness 2mm, the graphite blanket is two-layer, the fineness of quartz sand insulating layer is 50 meshes to 90 meshes, thickness 5mm to 8 mm; the utility model provides a ceramic crucible of current melt device have secondary pollution furnace charge and the problem of easy fracture.
Description
Technical Field
The utility model belongs to the technical field of metal melting equipment, a melt device of usefulness is smelted in high-purity indium vacuum induction is related to.
Background
The vacuum induction melting purification is a method for preparing high-purity metal widely applied at present, and favorable conditions are created for the reaction of gaseous products due to the chemical thermal and dynamic conditions generated under the vacuum environment, namely, the main metal and the impurities are in a high vacuum melting state, the steam pressure difference exists between the main metal and the impurities, and the impurities with high evaporation coefficient can be quickly evaporated and removed, so that the impurities which are difficult to volatilize and separate from the main metal under normal pressure can be realized under the vacuum environment, meanwhile, the temperature required for volatilizing the physical metal under the vacuum environment is lower, the separation coefficient of the main metal and the impurities is improved, and the purpose of purification is finally achieved. The melting device is used as the main component of the vacuum melting furnace and is mainly used for containing main metal and completing metal melting, so that the temperature stability in the refining and casting processes is ensured.
At present, more material melting devices are applied, most of the material melting devices are ceramic crucibles, and magnesia is used for melting materials in the middle of the ceramic crucibles to fix the ceramic crucibles on an induction coil, so that the ceramic crucibles are prevented from falling off in the casting process. However, in the vacuum melting process, the purified metal is subjected to secondary pollution caused by the influence of the material of the ceramic crucible, and meanwhile, as magnesia charging materials are used for fixing the crucible, the crucible is easy to crack in the using process, the charging materials after cracking and loosening are easy to fall into a casting mold in the casting process, and the product quality is influenced.
SUMMERY OF THE UTILITY MODEL
The utility model provides a high-purity indium vacuum induction melting uses melt device to there is the secondary pollution furnace charge and the problem of easy fracture in the ceramic crucible who solves current melt device.
In order to solve the above problem, the utility model discloses a technical scheme is: the quartz crucible is nested in the graphite crucible, the graphite crucible is wrapped by a graphite blanket with the purity of 99.995%, the outer wall of the graphite blanket is provided with a quartz sand insulating layer with the purity of 99.995%, and the outer wall of the quartz sand insulating layer is provided with a heating coil.
In the above technical solution, a more specific technical solution may also be: the thickness of the quartz crucible is 4 mm.
Further: the thickness of the graphite crucible is 8mm to 10 mm.
Further: the thickness of the graphite blanket is 2 mm.
Further: the graphite blanket is two-layered.
Further: the fineness of the quartz sand insulating layer is 50 meshes to 90 meshes, and the thickness is 5mm to 8 mm.
Since the technical scheme is used, compared with the prior art, the utility model following beneficial effect has: by nesting the quartz crucible in the graphite crucible, the temperature generated by the heating coil is transferred to the nested quartz crucible through the graphite crucible, meanwhile, the high-purity quartz sand is used as an isolation insulating layer between the heating coil and the high-purity graphite crucible, and the high-purity graphite blanket is used as an isolation layer between the high-purity graphite crucible and the high-purity quartz sand, so that the phenomena of short circuit, sparking and the like in the operation process are avoided; the crucible is lined by high-purity quartz, so that the product cannot be polluted, and the assembly is simple; the high-purity quartz sand is used as an insulating material, so that the complex procedure of fixing the charging material is avoided, the practicability is high, the maintenance amount is small, the heating efficiency is ensured, the risk of secondary pollution to the product is avoided, and the cracking phenomenon cannot occur.
Drawings
Fig. 1 is a schematic structural diagram of the present invention.
Detailed Description
The invention will be described in more detail with reference to the following examples:
the first embodiment is as follows:
the melting device for the high-purity indium vacuum induction melting shown in fig. 1 comprises a quartz crucible 1 with the purity of more than 99.997% and a graphite crucible 2 with the purity of more than 99.995%, wherein the quartz crucible 1 is nested in the graphite crucible 2, a graphite blanket 3 with the purity of 99.995% is wrapped outside the graphite crucible 2, a quartz sand insulating layer 4 with the purity of 99.995% is arranged on the outer wall of the graphite blanket 3, and a heating coil 5 is arranged on the outer wall of the quartz sand insulating layer 4; the thickness of the high-purity quartz crucible 1 is 4 mm; the thickness of the graphite crucible 2 is 8 mm; the thickness of the graphite blanket 3 is 2mm, and the graphite blanket 3 consists of two layers; the fineness of the quartz sand insulating layer 4 is 50 meshes, and the thickness is 5 mm.
Example two:
the melting device for the high-purity indium vacuum induction melting shown in fig. 1 comprises a quartz crucible 1 with the purity of more than 99.997% and a graphite crucible 2 with the purity of more than 99.995%, wherein the quartz crucible 1 is nested in the graphite crucible 2, a graphite blanket 3 with the purity of 99.995% is wrapped outside the graphite crucible 2, a quartz sand insulating layer 4 with the purity of 99.995% is arranged on the outer wall of the graphite blanket 3, and a heating coil 5 is arranged on the outer wall of the quartz sand insulating layer 4; the thickness of the high-purity quartz crucible 1 is 4 mm; the thickness of the graphite crucible 2 is 10 mm; the thickness of the graphite blanket 3 is 2mm, and the graphite blanket 3 consists of two layers; the fineness of the quartz sand insulating layer 4 is 90 meshes, and the thickness is 8 mm.
Claims (6)
1. The utility model provides a high-purity indium vacuum induction melting is with melt device which characterized in that: the heating device comprises a quartz crucible and a graphite crucible, wherein the quartz crucible is nested in the graphite crucible, a graphite blanket is wrapped outside the graphite crucible, a quartz sand insulating layer is arranged on the outer wall of the graphite blanket, and a heating coil is arranged on the outer wall of the quartz sand insulating layer.
2. The melting device for vacuum induction melting of high purity indium according to claim 1, characterized in that: the thickness of the quartz crucible is 4 mm.
3. The melting device for vacuum induction melting of high purity indium according to claim 2, characterized in that: the thickness of the graphite crucible is 8mm to 10 mm.
4. The melting device for vacuum induction melting of high purity indium according to claim 3, characterized in that: the thickness of the graphite blanket is 2 mm.
5. The melting device for vacuum induction melting of high purity indium as claimed in claim 4, wherein: the graphite blanket is two-layered.
6. The melting device for vacuum induction melting of high purity indium as claimed in claim 5, wherein: the fineness of the quartz sand insulating layer is 50 meshes to 90 meshes, and the thickness is 5mm to 8 mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020989882.XU CN212375345U (en) | 2020-06-03 | 2020-06-03 | Melting device for vacuum induction melting of high-purity indium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020989882.XU CN212375345U (en) | 2020-06-03 | 2020-06-03 | Melting device for vacuum induction melting of high-purity indium |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN212375345U true CN212375345U (en) | 2021-01-19 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202020989882.XU Active CN212375345U (en) | 2020-06-03 | 2020-06-03 | Melting device for vacuum induction melting of high-purity indium |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN212375345U (en) |
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2020
- 2020-06-03 CN CN202020989882.XU patent/CN212375345U/en active Active
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| GR01 | Patent grant | ||
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Effective date of registration: 20211013 Address after: 510700 public space office card booth B030 of youth home innovation and entrepreneurship incubation base, unit 1004, No. 182, science Avenue, Huangpu District, Guangzhou, Guangdong Province Patentee after: Guangzhou Hanpu Technology Co.,Ltd. Address before: 545212 No.1 Jian'an Road, Liutang Industrial Zone, Liutang Town, Liucheng County, Liuzhou City, Guangxi Zhuang Autonomous Region Patentee before: GUANGXI YINTAI TECHNOLOGY Co.,Ltd. |
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| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20221115 Address after: 510670 room 229, annex building, No. 111, Kexue Avenue, Huangpu District, Guangzhou City, Guangdong Province (office only) Patentee after: Hanwa Technology Co.,Ltd. Address before: 510700 public space office card booth B030 of youth home innovation and entrepreneurship incubation base, unit 1004, No. 182, science Avenue, Huangpu District, Guangzhou, Guangdong Province Patentee before: Guangzhou Hanpu Technology Co.,Ltd. |
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| TR01 | Transfer of patent right |