CN212342780U - Capacitive coupling device and filter - Google Patents

Capacitive coupling device and filter Download PDF

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Publication number
CN212342780U
CN212342780U CN202021520816.4U CN202021520816U CN212342780U CN 212342780 U CN212342780 U CN 212342780U CN 202021520816 U CN202021520816 U CN 202021520816U CN 212342780 U CN212342780 U CN 212342780U
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dielectric resonator
partition layer
dielectric
layer
capacitive coupling
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刘�文
钟伟刚
朱晖
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Wuhan Fangu Ceramic Material Co ltd
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Wuhan Fangu Ceramic Material Co ltd
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Abstract

The utility model discloses a capacitive coupling device and wave filter. The negative coupling structure at least comprises a first dielectric resonator and a second dielectric resonator which are connected with each other, wherein a first partition layer is arranged on the surface of a body at the connecting position of the first dielectric resonator and the second dielectric resonator, the first partition layer is an annular ring with an opening, a connecting section is arranged between the first dielectric resonator and the second dielectric resonator, and negative coupling is realized between the first dielectric resonator and the second dielectric resonator through the first partition layer and the connecting section. The utility model is provided with an annular partition layer with an opening on the surface between the two dielectric resonators, realizes the negative coupling between the two dielectric resonators through the partition layer and the connecting section between the two dielectric resonators, and has simple structure and more convenient processing; meanwhile, the negative coupling blind hole can be arranged on the inner side or the outer side of the partition layer to match with the adjustment of the coupling amount, so that the design is more reasonable.

Description

Capacitive coupling device and filter
Technical Field
The utility model belongs to the technical field of communication, concretely relates to capacitive coupling device and wave filter.
Background
In the field of communications, with the development of technology, the performance requirements for the filters in the system are higher and higher. With the improvement of the requirements, the high-power microwave filter at the base station end has the characteristics of high index, small volume and low cost. In implementing these high performance filters, limited by the cavity size, the filters need to be implemented using new materials or technologies.
Due to the material characteristics of the dielectric filter, transmission zeros are generally required to be added when designing the filter. Dielectric filters, however, are more difficult to implement for capacitive cross coupling than metal filters. In the prior art, patent No. 201310688407.3 discloses three possible schemes, one of which is a scheme for realizing capacitive cross coupling for a zero cavity design; the second scheme is that two cavities are adopted to carry out 180-degree phase reversal to realize capacitive cross coupling; and thirdly, punching a hole (without arranging an electromagnetic shielding layer in the hole) on the medium coupling window, wherein the screw is deep into the hole within about 2mm from the bottom of the hole, and then fixing the hole in a cover plate or screw sleeve mode, thereby realizing the scheme of capacitive cross coupling. For the capacitive coupling device, for the first scheme and the second scheme, for each capacitive cross coupling, the capacitive coupling device needs to occupy more space of one cavity in the horizontal direction; for the third solution, in order to reverse the polarity, a screw sleeve or a cover plate needs to be added, and a height space also needs to be added in the vertical direction, so that the design of a dielectric filter with a more severe space is not facilitated, and therefore, the prior art needs to be improved. In the prior art, patent No. 201811036762.1 discloses a possible solution, a capacitive coupling device, comprising a plurality of solid dielectric elements, the adjacent medium monomers are spliced and connected, the splicing surface of at least one adjacent medium monomer is provided with a capacitive coupling structure, the capacitive coupling structure includes a first blind via and a first air coupling window with an unmetallized surface, one side of the splicing surface of the adjacent medium monomers is provided with a matched half groove along the vertical corresponding position, the first blind hole is formed after the two matched half grooves are spliced, the depth of the first blind hole is greater than or equal to 1/2 of the air coupling window depth and less than the first air coupling window depth, the inner wall and the bottom of the first blind hole are provided with metal shielding layers, and the first air coupling windows are arranged on two sides and the bottom of the first blind hole. A plurality of medium monomers need to be spliced and connected, the production difficulty is high, and further optimization and improvement design is needed.
The negative coupling blind hole in the form of a through hole or a blind hole is arranged between the two resonators to realize the negative coupling between the two resonators, and is limited by the arrangement position, and the second harmonic caused by the negative coupling in the form is close to the passband of the filter and has certain influence on out-of-band rejection.
SUMMERY OF THE UTILITY MODEL
The utility model aims at providing a capacitive coupling device and wave filter that simple structure, coupling strength are high in order to solve the not enough of above-mentioned background art existence.
The utility model adopts the technical proposal that: a capacitive coupling device at least comprises a first dielectric resonator and a second dielectric resonator which are connected with each other, wherein each dielectric resonator comprises a body made of a solid dielectric material and a tuning hole located in the surface of the body, the tuning hole is a blind hole, a conductive layer covers the surface of the body, a first partition layer is arranged on the surface of the body at the connecting position of the first dielectric resonator and the second dielectric resonator, the first partition layer is an annular ring with an opening, a connecting section is arranged between the first dielectric resonator and the second dielectric resonator, and negative coupling is achieved between the first dielectric resonator and the second dielectric resonator through the first partition layer and the connecting section.
Further, still include at least one negative coupling blind hole, the negative coupling blind hole is located the body surface that is provided with first partition layer.
Further, the negative coupling blind hole is located inside or outside the annular ring.
Further, the shape of the first partition layer is any one of a square shape, a circular shape, an oval shape and a oval shape provided with an opening.
Furthermore, the first isolating layer is composed of a circle of medium layers without a conducting layer on the surface of the body.
Furthermore, the surfaces of the bodies on two sides of the connecting position of the first dielectric resonator and the second dielectric resonator are provided with first isolating layers.
Further, a second partition layer is formed at a non-connection position between the first dielectric resonator and the second dielectric resonator.
Further, the second partition layer is a through groove or a through hole disposed between the first dielectric resonator and the second dielectric resonator.
Furthermore, the second isolating layer is a shielding layer disposed on an engagement surface between the first dielectric resonator and the second dielectric resonator.
A filter comprising at least one capacitive coupling device as claimed in any one of the preceding claims.
The utility model has the advantages that:
the utility model is provided with an annular partition layer with an opening on the surface between the two dielectric resonators, realizes the negative coupling between the two dielectric resonators through the partition layer and the connecting section between the two dielectric resonators, and has simple structure and more convenient processing; meanwhile, the negative coupling blind hole can be arranged on the inner side or the outer side of the partition layer to match with the adjustment of the coupling amount, so that the design is more reasonable. The structure is used in the filter, a transmission zero point can be formed at the low end of the passband of the filter, and the rectangular coefficient of the filter is increased, so that the performance of the filter is improved, and the volume of the filter is reduced; meanwhile, the area and the width of the first partition layer and the area of the conductive layer of the coupling hole are adjusted, so that the coupling amount range of negative coupling is wider, the position of the second harmonic wave can be further shifted, and the amplitude of the second harmonic wave is reduced.
Drawings
Fig. 1 is a front schematic view of the present invention.
Fig. 2 is a cross-sectional view taken along line a-a of fig. 1.
Fig. 3 is a schematic back view of the present invention.
Fig. 4 is a perspective view of the present invention.
In the figure: 1-a first dielectric resonator; 2-a second dielectric resonator; 3-a tuning hole; 4-first fault; 5-opening; 6-a connecting segment; 7-negative coupling blind holes; 8-a second partition layer; 9-bulk surface.
Detailed Description
The following describes the present invention with reference to the accompanying drawings. It should be noted that the description of the embodiments is provided to help understanding of the present invention, but the present invention is not limited thereto. Furthermore, the technical features mentioned in the embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
As shown in fig. 1-4, the utility model provides a capacitive coupling device, first dielectric resonator 1 and second dielectric resonator 2 including interconnect, this first dielectric resonator 1 and second dielectric resonator 2 include the body of being made by solid-state dielectric material and the tuning hole 3 that is located body surface 9, the body surface of first dielectric resonator 1 and second dielectric resonator 2 is equipped with the conducting layer, and tuning hole 3 is the blind hole, and 3 inner walls in tuning hole are equipped with the conducting layer, and tuning hole 3 distributes in the outside on first partition layer. The surface of the body at the connecting position of the first dielectric resonator 1 and the second dielectric resonator 2 is provided with a first partition layer 4, the first partition layer 4 is an annular ring provided with an opening 5, an integrated connecting section 6 is arranged between the first dielectric resonator 1 and the second dielectric resonator 2, the part surrounded by the first partition layer 4 and the connecting section 6 form a negative coupling area, and negative coupling is realized between the first dielectric resonator 1 and the second dielectric resonator 2 through the first partition layer 4 and the connecting section 6.
When the body surfaces of the first dielectric resonator 1 and the second dielectric resonator 2 on both sides are connected, the first partition layers 4 may be provided on both sides.
The first isolating layer 4 is arranged between the surfaces of the bodies at the connecting positions of the first dielectric resonator 1 and the second dielectric resonator 2, namely the first isolating layer 4 penetrates through a central axis 10 between the first dielectric resonator 1 and the second dielectric resonator 2, and the position of the first isolating layer 4 between the two dielectric resonators can be adjusted to adjust the coupling amount.
The conductive layer on the surface of the first dielectric resonator 1 and the second dielectric resonator 2 may be a metallization layer, and may be formed by electroplating metal on the surface of the body. The metal can be silver, and can also be other metals meeting the actual requirement. During manufacturing, the body with the tuning hole and the negative coupling blind hole is obtained through integrated forming, surface metallization is conducted on the body, the tuning hole and the negative coupling blind hole, for example, surface electroplating is conducted on the body, the tuning hole and the negative coupling blind hole, the dielectric resonator is obtained, the position of the first isolating layer is avoided during surface metallization, and therefore the dielectric resonator is formed, or after the metal layer is completely electroplated, part of the metal layer is removed to form the first isolating layer. In this way the dielectric resonator comprises a dielectric resonator whose body is continuous. The dielectric resonator is obtained by adopting an integrated forming mode, so that the processing technology is simpler.
In the above scheme, two negative coupling blind holes 7 are arranged on the inner side of the first partition layer 4, the inner walls of the two negative coupling blind holes 7 are provided with conductive layers, the two negative coupling blind holes 7 are respectively arranged on the first dielectric resonator 1 and the second dielectric resonator 2, one negative coupling blind hole is located at a non-open end on the inner side of the annular ring, and the other negative coupling blind hole is located at an open position on the inner side of the annular ring. The inner side and the outer side of the first partition layer 4 in this embodiment refer to a side close to the line curvature center (or pattern center) and a side far from the line curvature center (or pattern center), respectively. The negative coupling blind hole and its surrounding body form a structure similar to a resonator, the negative coupling blind hole being similar to the tuning hole of the resonator. The depth of the negative coupling blind hole is larger than that of the tuning hole, and is usually two times or more than two times of the depth of the tuning hole, so that the resonant frequency of the resonator is lower than that of the resonators on two sides of the resonator, and is usually half or less than half of the resonant frequency of the resonators on two sides of the resonator, and thus, capacitive coupling can be formed between the dielectric resonator and the dielectric resonator. The depth of the negative coupling blind hole is related to the frequency of the transmission zero of the dielectric filter. Specifically, the depth of the negative coupling blind hole can be designed according to practical requirements, such as the frequency of the transmission zero, and is not limited herein. And the two dielectric resonators connected with each other at the positions of the negative coupling blind holes are determined according to the frequency of the transmission zero point of the dielectric filter.
In the above scheme, the first partition layer 4 is shaped like a waist circle with an opening at one end, and the first partition layer 4 is composed of a circle of dielectric layers without conductive layers on the surfaces of the first dielectric resonator 1 and the second dielectric resonator 2, that is, the first partition layer 4 is located at a part of the surface of the dielectric resonator which is not covered by the conductive layers. The shape of the first partition layer 4 may also be any one of a square shape, a circular shape, an oval shape, or an irregular shape provided with an opening, and the position and the size of the opening are adjusted according to actual processing requirements and the size of the coupling amount. The size of the area enclosed by the first partition layer 4 and the line width of the first partition layer are related to the coupling amount of capacitive coupling between two dielectric resonators connected at the position of the first partition layer. That is, the resonance frequency of the structure similar to the resonator formed by the first partition layer and the body around the first partition layer can be adjusted by removing the area size or line width formed by a part of the conductive layer, thereby adjusting the coupling amount between the resonators on both sides thereof. By adjusting the area of the first partition layer, the coupling amount of the capacitive coupling between the dielectric resonator and the dielectric resonance can be changed. Specifically, the conductive layer may be removed by grinding to form the first blocking layer, which is not limited in the embodiment of the present invention.
The dielectric material used in the dielectric resonator is preferably ceramic, and the ceramic has high dielectric constant and good hardness and high temperature resistance, so the dielectric material is a solid dielectric material commonly used in the field of radio frequency filters. Of course, other materials known to those skilled in the art, such as glass, electrically insulating polymers, etc., may be used as the dielectric material.
In the above-described embodiment, the second blocking layer 8 is formed at a position not connected between the first dielectric resonator 1 and the second dielectric resonator 2. That is, a place between the first dielectric resonator 1 and the second dielectric resonator 2 and outside the connection section 6 is used as a second partition layer 8, and the second partition layer 8 is a through groove provided between the first dielectric resonator 1 and the second dielectric resonator 2 in this embodiment. The second blocking layer 8 may be a shielding layer (i.e., a conductive layer) provided on the junction surface between the first dielectric resonator 1 and the second dielectric resonator 2.
The invention also provides a filter comprising at least one capacitive coupling device as defined above.
The above is only a specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention should be covered within the protection scope of the present invention. Those not described in detail in this specification are within the skill of the art.

Claims (10)

1. A capacitive coupling device comprising at least a first dielectric resonator and a second dielectric resonator connected to each other, each dielectric resonator comprising a body made of a solid dielectric material and a tuning hole in a surface of the body, the tuning hole being a blind hole, the surface of the body being covered with a conductive layer, characterized in that: the surface of the body at the connecting position of the first dielectric resonator and the second dielectric resonator is provided with a first partition layer, the first partition layer is an annular ring provided with an opening, a connecting section is arranged between the first dielectric resonator and the second dielectric resonator, and negative coupling is realized between the first dielectric resonator and the second dielectric resonator through the first partition layer and the connecting section.
2. The capacitive coupling device of claim 1, wherein: the device further comprises at least one negative coupling blind hole, and the negative coupling blind hole is located on the surface of the body provided with the first partition layer.
3. The capacitive coupling device of claim 2, wherein: the negative coupling blind hole is positioned on the inner side or the outer side of the ring shape of the annular ring.
4. The capacitive coupling device of claim 1, wherein: the shape of the first partition layer is any one of square, round, oval and oval with an opening.
5. The capacitive coupling device of claim 1, wherein: the first isolating layer is composed of a circle of medium layers without a conducting layer on the surface of the body.
6. The capacitive coupling device of claim 1, wherein: and first partition layers are arranged on the surfaces of the bodies on two sides of the connecting position of the first dielectric resonator and the second dielectric resonator.
7. The capacitive coupling device of claim 1, wherein: and a second partition layer is formed at a non-connected position between the first dielectric resonator and the second dielectric resonator.
8. The capacitive coupling device of claim 7, wherein: the second partition layer is a through groove or a through hole arranged between the first dielectric resonator and the second dielectric resonator.
9. The capacitive coupling device of claim 7, wherein: the second isolating layer is a shielding layer arranged on an engagement surface between the first dielectric resonator and the second dielectric resonator.
10. A filter, characterized by: the filter comprises at least one capacitive coupling device as claimed in any one of claims 1 to 9.
CN202021520816.4U 2020-07-28 2020-07-28 Capacitive coupling device and filter Active CN212342780U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202021520816.4U CN212342780U (en) 2020-07-28 2020-07-28 Capacitive coupling device and filter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202021520816.4U CN212342780U (en) 2020-07-28 2020-07-28 Capacitive coupling device and filter

Publications (1)

Publication Number Publication Date
CN212342780U true CN212342780U (en) 2021-01-12

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Application Number Title Priority Date Filing Date
CN202021520816.4U Active CN212342780U (en) 2020-07-28 2020-07-28 Capacitive coupling device and filter

Country Status (1)

Country Link
CN (1) CN212342780U (en)

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