CN212341085U - Boron-doped diamond detection electrode - Google Patents
Boron-doped diamond detection electrode Download PDFInfo
- Publication number
- CN212341085U CN212341085U CN201922226914.0U CN201922226914U CN212341085U CN 212341085 U CN212341085 U CN 212341085U CN 201922226914 U CN201922226914 U CN 201922226914U CN 212341085 U CN212341085 U CN 212341085U
- Authority
- CN
- China
- Prior art keywords
- boron
- doped diamond
- electrode
- conductive base
- gland
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 51
- 239000010432 diamond Substances 0.000 title claims abstract description 51
- 238000001514 detection method Methods 0.000 title claims abstract description 23
- 210000004907 gland Anatomy 0.000 claims abstract description 19
- 239000004020 conductor Substances 0.000 claims abstract description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 7
- 238000007789 sealing Methods 0.000 claims description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract description 10
- 229910052796 boron Inorganic materials 0.000 abstract description 10
- 238000009434 installation Methods 0.000 abstract description 5
- 230000005611 electricity Effects 0.000 abstract description 3
- 230000010354 integration Effects 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 5
- 238000009825 accumulation Methods 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 239000010865 sewage Substances 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 239000002352 surface water Substances 0.000 description 2
- 238000012271 agricultural production Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000000835 electrochemical detection Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
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- Measurement Of Levels Of Liquids Or Fluent Solid Materials (AREA)
Abstract
The utility model discloses a boron-doped diamond detection electrode, include: the electric pole, the electrode shell, the gland, conductive base, the flexible conductor, the bottom cap, mix the boron diamond disk, flexible conductive gasket and rubber ring, the gland screws through the screw thread and compresses tightly mixing boron diamond disk and flexible conductive gasket on conductive base, conductive base passes through the flexible conductor and is connected with the electric pole, realize mixing boron diamond disk and external power supply good electricity and be connected, the gland compresses tightly the rubber ring simultaneously and realizes the water-tight of detection working face, the bottom cap screws through the screw thread and pushes down the rubber ring, and be connected with the electrode shell, realize the water-tight of detection electrode bottom, the horn mouth angle a on the gland is 120 ~ 160, mix boron diamond disk mounting hole center pin and horizontal plane contained angle b and be 0 ~ 45. The utility model provides an electrode structure of quick dress card makes things convenient for the vertical installation of integration promptly, ensures the reliability of electrode during operation again.
Description
Technical Field
The utility model relates to a boron-doped diamond detection electrode, which is used for detecting COD in sewage and surface water.
Background
A large amount of sewage generated in industrial production, agricultural production and daily life of residents poses serious threat to water environment. In order to know the quality and pollution degree of the water environment, the sewage and surface water must be detected. Among them, COD is the most important index. The boron-doped diamond has a very wide electrochemical window, can effectively generate a large amount of hydroxyl radicals, and has the capability of quickly oxidizing all organic matters in water. Therefore, the boron-doped diamond electrode becomes a novel electrode for detecting COD.
The boron-doped diamond electrode is used for detecting COD, and is an electrochemical detection method. Typically, a three-electrode system is used, in which a boron-doped diamond electrode is the working electrode. For convenient installation, working electrodes in a common three-electrode system are vertically installed, and the three-electrode system has the advantages of convenient installation, reliable use and the like. When the boron-doped diamond material is used as a detection electrode, the surface of the diamond electrode needs to be cleaned before each detection, so that impurities and the like which can be attached to the surface in the last detection process can be removed. The common cleaning method is to use the boron-doped diamond electrode as an anode, apply a large anode voltage to generate a large amount of oxygen on the surface of the boron-doped diamond electrode, and flush the surface of the electrode with oxygen to obtain a clean surface.
When the working electrode is in a vertical working position, generated bubbles easily float up along the surface of the working surface in the cleaning process due to the existence of the gland and are accumulated at the upper edge of the working electrode. The accumulation of air bubbles results in a reduction in the limited working area of the working electrode, which severely affects the accuracy and repeatability of the electrode measurements. Therefore, the structure of the electrode needs to be optimally designed, and the problem of bubble accumulation at the upper edge of the working electrode is thoroughly solved.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide a boron-doped diamond detection electrode. The device adopts flexible electrically conductive gasket to connect electrically conductive base and boron-doped diamond disk, utilizes flexible electrically conductive gasket's characteristics such as deformability and ability resilience, has guaranteed the effectual electricity of boron-doped diamond electrode and has connected. Meanwhile, the problem of bubble accumulation on the upper edge of the boron-doped diamond wafer in the cleaning process is avoided through the horn mouth and the angle structure of the boron-doped diamond wafer mounting hole.
The design scheme of the utility model includes: the electric pole, the electrode shell, the gland, conductive base, the flexible conductor, the bottom cap, mix the boron diamond disk, flexible conductive gasket and rubber ring, the gland screws through the screw thread and compresses tightly mixing boron diamond disk and flexible conductive gasket on conductive base, conductive base passes through the flexible conductor and is connected with the electric pole, realize mixing boron diamond disk and external power supply good electricity and be connected, the gland compresses tightly the rubber ring simultaneously and realizes the water-tight of detection working face, the bottom cap screws through the screw thread and pushes down the rubber ring, and be connected with the electrode shell, realize the water-tight of detection electrode bottom, the horn mouth angle a on the gland is 120 ~ 160, mix boron diamond disk mounting hole center pin and horizontal plane contained angle b and be 0 ~ 45.
The boron-doped diamond detection electrode is characterized in that the conductive base is made of a rigid conductive material, an external thread is machined at one end of the conductive base and used for screwing the boron-doped diamond wafer mounting hole from the lower part, and meanwhile, the step surface of the mounted conductive base is completely attached to the bottom surface of the mounting hole, so that the working surface of the boron-doped diamond wafer is accurately positioned during mounting each time.
The boron-doped diamond detection electrode is characterized in that the conductive base and the boron-doped diamond wafer are connected to form a flexible conductive gasket, the thickness of the flexible conductive gasket is larger than the gap between the boron-doped diamond wafer and the conductive base after the gland is completely compressed, and therefore the flexible conductive gasket can be fully contacted with the surfaces of the boron-doped diamond wafer and the conductive base under the pressure condition, and effective electric connection is guaranteed.
The utility model provides an electrode structure of quick dress card, this structure makes things convenient for the vertical installation of integration promptly, has ensured the reliability of mixing boron diamond electrode during operation again.
Drawings
Fig. 1 is a schematic structural diagram of the present invention.
Fig. 2 is a partial schematic view of a detection electrode according to embodiment 1 of the present invention.
Detailed Description
The invention will be further described with reference to the accompanying drawings:
example 1:
as shown in figure 1, the boron-doped diamond detection electrode comprises an electric connection column 1, an electrode shell 2, a gland 3, a conductive base 4, a flexible conducting wire 5, a bottom cover 6, a boron-doped diamond wafer 7, a flexible conductive gasket 8 and a rubber ring 9, wherein the gland 3 tightly presses the boron-doped diamond wafer 7 and the flexible conductive gasket 8 on the conductive base 4 through threaded screwing, the conductive base 4 is connected with the electric connection column 1 through the flexible conducting wire 5, good electric connection between the boron-doped diamond wafer 7 and an external power supply is realized, meanwhile, the gland 3 tightly presses the rubber ring 9 to realize water sealing of a detection working surface, the bottom cover 6 tightly presses the rubber ring 9 through threaded screwing and is connected with the electrode shell 2, and water sealing of the bottom of the detection electrode is realized. As shown in figure 2, the bell mouth angle on the gland 3 is 135 degrees, the included angle between the central axis of the boron-doped diamond wafer mounting hole and the horizontal plane is 45 degrees, and the structure can effectively avoid the accumulation of bubbles on the edge of the working surface of the electrode when the electrode works.
The utility model provides an electrode structure of quick dress card, this structure makes things convenient for the vertical installation of integration promptly, has ensured the reliability of mixing boron diamond electrode during operation again.
Claims (3)
1. A boron-doped diamond detection electrode, characterized in that the electrode comprises: the electric pole comprises an electric pole (1), an electrode shell (2), a gland (3), a conductive base (4), a flexible lead (5), a bottom cover (6), a boron-doped diamond wafer (7), a flexible conductive gasket (8) and a rubber ring (9), wherein the gland (3) tightly presses the boron-doped diamond wafer (7) and the flexible conductive gasket (8) on the conductive base (4) through screwing, the conductive base (4) is connected with the electric pole (1) through the flexible lead (5), so that the boron-doped diamond wafer (7) is electrically connected with an external power supply well, meanwhile, the gland (3) compresses the rubber ring (9) to realize water sealing of the detection working surface, the bottom cover (6) is screwed tightly through threads to press the rubber ring (9), and is connected with the electrode shell (2) to realize the water seal of the bottom of the detection electrode, the angle a of a bell mouth on the gland (3) is 120-160 degrees, and the included angle b between the central axis of the boron-doped diamond wafer mounting hole and the horizontal plane is 0-45 degrees.
2. The boron-doped diamond detection electrode according to claim 1, wherein the conductive base is made of a rigid conductive material, one end of the conductive base is provided with external threads for screwing the boron-doped diamond wafer mounting hole from below, and the step surface of the mounted conductive base is completely attached to the bottom surface of the mounting hole, so that the working surface of the boron-doped diamond wafer is accurately positioned during each mounting.
3. The boron-doped diamond detection electrode of claim 1, wherein the conductive base and the boron-doped diamond wafer are connected by a flexible conductive gasket, and the thickness of the flexible conductive gasket is greater than the gap between the boron-doped diamond wafer and the conductive base after the gland is completely compressed, so that the flexible conductive gasket can be fully contacted with the surfaces of the boron-doped diamond wafer and the conductive base under pressure, and effective electrical connection is ensured.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201922226914.0U CN212341085U (en) | 2019-12-12 | 2019-12-12 | Boron-doped diamond detection electrode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201922226914.0U CN212341085U (en) | 2019-12-12 | 2019-12-12 | Boron-doped diamond detection electrode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN212341085U true CN212341085U (en) | 2021-01-12 |
Family
ID=74064841
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201922226914.0U Expired - Fee Related CN212341085U (en) | 2019-12-12 | 2019-12-12 | Boron-doped diamond detection electrode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN212341085U (en) |
-
2019
- 2019-12-12 CN CN201922226914.0U patent/CN212341085U/en not_active Expired - Fee Related
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20210112 |