CN212330680U - Grinding die - Google Patents
Grinding die Download PDFInfo
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- CN212330680U CN212330680U CN202020773358.9U CN202020773358U CN212330680U CN 212330680 U CN212330680 U CN 212330680U CN 202020773358 U CN202020773358 U CN 202020773358U CN 212330680 U CN212330680 U CN 212330680U
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Abstract
The utility model provides a grinding mould, which is used for grinding quartz wafers and comprises a first template and a second template; the first template is provided with a mounting hole which is matched with the quartz wafer; the second template comprises a body and a mounting block, the body is attached to the first template, and the mounting block is arranged on the body and embedded in the mounting hole; wherein, the height of installation piece is less than the height of mounting hole. The utility model provides a grinding die to because quartz wafer's thickness depends on the degree of depth of mounting groove, so the degree of depth of adjustment mounting groove can obtain the quartz wafer of different thickness, and quartz wafer's thickness no longer is subject to grinding die's thickness, and then the thinner quartz wafer of workable play thickness, with the frequency that promotes quartz crystal syntonizer, reduces quartz crystal syntonizer's volume.
Description
Technical Field
The utility model relates to a quartz wafer technical field particularly, relates to a grinding die.
Background
At present, with the development of 5G, the required frequency of the quartz crystal resonator is higher and higher, and the required frequency of the fundamental frequency is higher and higher, so that the thickness of the quartz crystal wafer needs to be thinner and thinner.
In the related art, the processing technology of the quartz wafer is mainly grinding, and when the quartz wafer is ground, the quartz wafer needs to be placed in a planetary wheel, and the planetary wheel drives the quartz wafer to move in the grinding equipment. However, since the final thickness of the quartz wafer depends on the thickness of the planetary wheel, when the quartz wafer is too thin, the strength of the planetary wheel is reduced, and the quartz wafer cannot be stably driven to move, thereby increasing the rejection rate of the quartz wafer.
SUMMERY OF THE UTILITY MODEL
The present invention aims at least solving one of the technical problems existing in the prior art or the related art.
To this end, the utility model discloses a first aspect provides a grinding die.
In view of the above, a first aspect of the present invention provides a grinding mold for grinding a quartz wafer, the grinding mold comprising a first template and a second template; the first template is provided with a mounting hole which is matched with the quartz wafer; the second template comprises a body and a mounting block, the body is attached to the first template, and the mounting block is arranged on the body and embedded in the mounting hole; wherein, the height of installation piece is less than the height of mounting hole.
The utility model provides a grinding mold, first template and second template are laminated mutually, and the installation piece of second template is inserted into the mounting hole by one side of first template to the height of installation piece is less than the height of mounting hole, so can form a mounting groove that is used for placing quartz chip at the opposite side of first template, place quartz chip in the mounting groove after, can grind quartz chip; the thickness of the quartz wafer depends on the depth of the mounting groove, namely the difference between the height of the mounting block and the height of the mounting hole, so that the overall thickness of the first template and the second template does not depend on the thickness of the quartz wafer, the grinding die further has higher strength, the grinding die can stably drive the quartz wafer to move, the grinding qualified rate of the quartz wafer is improved, and the cost of the quartz wafer is reduced; and because the thickness of the quartz crystal wafer depends on the depth of the mounting groove, the quartz crystal wafers with different thicknesses can be obtained by adjusting the depth of the mounting groove, the thickness of the quartz crystal wafer is not limited by the thickness of the grinding die any more, and then the quartz crystal wafer with thinner thickness can be processed, so that the frequency of the quartz crystal resonator is improved, and the volume of the quartz crystal resonator is reduced.
Additionally, the utility model provides an among the above-mentioned technical scheme grinding die can also have following additional technical characteristics:
in one technical scheme of this application, grinding die utensil still includes the driving sleeve, and the driving sleeve is connected on first template and/or second template to drive first template and second template and rotate.
In the technical scheme, the driving sleeve is sleeved on the outer sides of the first template and the second template and matched with a driving part of the grinding equipment to realize the driving of the grinding mold and further realize the grinding of the quartz wafer.
In one aspect of the present application, a drive sleeve includes a drive ring and a plurality of teeth; the driving ring is clamped on the first template and/or the second template; a plurality of teeth are arranged on the outer wall of the driving ring and arranged along the circumferential direction of the driving ring.
In the technical scheme, the driving part of the grinding equipment comprises a sun gear and an inner gear ring, a plurality of teeth are arranged on the outer wall of the driving ring, the teeth can be matched with the sun gear and the inner gear ring simultaneously, the grinding mold is used as a planetary wheel, and a planetary gear mechanism is further formed, so that the grinding mold can rotate around the axis of the sun gear and also rotate around the circumference of the grinding mold, the thickness of the quartz wafer is ground more uniformly, and the grinding efficiency of the quartz wafer can be effectively improved.
In one technical scheme of the application, the first template comprises a first discharging hole, and the first discharging hole is arranged along the circumferential direction of the mounting hole; the second template comprises a second discharge hole which is arranged on the body and arranged along the circumferential direction of the mounting block; the first discharging hole is communicated with the second discharging hole.
In this technical scheme, through setting up first relief hole and second relief hole, avoid the waste material under the grinding to pile up in the mounting groove, and then reduce the influence of waste material to quartz wafer grinding effect.
In a technical scheme of this application, one side of first template is provided with the constant head tank, and the body inlays in the constant head tank.
In this technical scheme, the constant head tank realizes the location between first template and the second template, promotes the axiality between first template and the second template.
In one technical scheme of the application, a bulge is arranged on the inner wall of the driving sleeve; a notch is arranged on the side wall of the positioning groove; a clamping groove is formed in the side wall of the body; wherein, the bulge passes through the notch and then is embedded in the clamping groove.
In this technical scheme, inlay in the draw-in groove after the arch passes the breach for the driving sleeve can drive first template and the first expert of second template and rotate.
In one aspect of the present application, the thickness of the body is less than the depth of the positioning groove.
In the technical scheme, the thickness of the body is smaller than the depth of the positioning groove, and the body is prevented from protruding out of the positioning groove to generate interference after the first template and the second template are assembled.
In one aspect of the present application, a difference between a height of the mounting block and a height of the mounting hole is equal to a predetermined thickness of the quartz wafer.
In a technical scheme of this application, grinding die still includes the adjusting pad, and the adjusting pad sets up between first template and second template, and the adjusting pad is provided with on keeping away the vacancy, keeps away vacancy and installation piece looks adaptation.
In the technical scheme, the adjusting pad can adjust the depth of the mounting groove according to the preset thickness of the quartz wafer, so that the grinding die can be suitable for grinding quartz wafers with different thicknesses.
The preset thickness of the quartz wafer is equal to the ratio of 1670 to the fundamental frequency of the quartz wafer, i.e. the actual thickness of the finished quartz wafer.
In a technical scheme of this application, grinding die utensil still includes the locating pin, and the one end of locating pin is pegged graft on first template, and the other end is pegged graft on the second template.
In this technical scheme, the locating pin is not coaxial with the axis disalignment of first template, also is not coaxial with the second template, and the locating pin can realize the location to first template and second template in week ascending like this for a plurality of mounting blocks and a plurality of mounting hole one-to-one reduce different mounting holes and the produced error of mounting block cooperation back, and then promote grinding die's precision.
Additional aspects and advantages of the invention will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the invention.
Drawings
The above and/or additional aspects and advantages of the present invention will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:
fig. 1 shows an assembly view of a grinding mold according to one embodiment of the present invention;
fig. 2 shows a schematic structural view of a first template according to an embodiment of the invention;
fig. 3 shows a cross-sectional view of a first template according to an embodiment of the invention;
fig. 4 shows a principal intent of a second template according to an embodiment of the present invention;
fig. 5 shows a cross-sectional view of a second template according to an embodiment of the invention;
fig. 6 shows a schematic structural view of a drive sleeve according to an embodiment of the invention;
fig. 7 is a cross-sectional view a-a of the drive sleeve of fig. 6 according to an embodiment of the present invention;
fig. 8 illustrates a rear intent of a second template according to an embodiment of the present invention;
fig. 9 shows a flow chart of a method of grinding a quartz wafer according to an embodiment of the present invention;
wherein, the correspondence between the reference numbers and the component names in fig. 1 to 8 is:
100 first template, 102 mounting holes, 104 first discharge holes, 106 positioning grooves, 200 second template, 202 body, 204 mounting blocks, 206 second discharge holes, 300 driving sleeve, 302 driving ring, 304 teeth.
Detailed Description
In order to make the aforementioned objects, features and advantages of the present invention more clearly understood, the present invention will be described in further detail with reference to the accompanying drawings and detailed description. It should be noted that the embodiments and features of the embodiments of the present application may be combined with each other without conflict.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, however, the present invention may be practiced in other ways than those specifically described herein, and therefore the scope of the present invention is not limited by the specific embodiments disclosed below.
A method of grinding a mold and a quartz wafer according to some embodiments of the present invention will be described with reference to fig. 1 to 9.
In an embodiment of the first aspect of the present invention, as shown in fig. 1, the present invention provides a grinding mold for grinding a quartz wafer, the grinding mold comprising a first template 100 and a second template 200; as shown in fig. 2 and 3, the first template 100 is provided with mounting holes 102, and the mounting holes 102 are matched with the quartz wafer; as shown in fig. 4 and 5, the second mold plate 200 includes a body 202 and a mounting block 204, the body 202 is attached to the first mold plate 100, and the mounting block 204 is disposed on the body 202 and embedded in the mounting hole 102; wherein the height of the mounting block 204 is less than the height of the mounting hole 102.
In this embodiment, the first template 100 and the second template 200 are attached, the mounting block 204 of the second template 200 is inserted into the mounting hole 102 from one side of the first template 100, and the height of the mounting block 204 is smaller than that of the mounting hole 102, so that a mounting groove for placing a quartz wafer is formed on the other side of the first template 100, and after the quartz wafer is placed in the mounting groove, the quartz wafer can be ground; because the thickness of the quartz wafer depends on the depth of the mounting groove, namely the difference between the height of the mounting block 204 and the height of the mounting hole 102, the overall thickness of the first template 100 and the second template 200 does not depend on the thickness of the quartz wafer, so that the grinding mold has higher strength, the grinding mold can stably drive the quartz wafer to move, the grinding qualified rate of the quartz wafer is improved, and the cost of the quartz wafer is reduced; and because the thickness of the quartz crystal wafer depends on the depth of the mounting groove, the quartz crystal wafers with different thicknesses can be obtained by adjusting the depth of the mounting groove, the thickness of the quartz crystal wafer is not limited by the thickness of the grinding die any more, and then the quartz crystal wafer with thinner thickness can be processed, so that the frequency of the quartz crystal resonator is improved, and the volume of the quartz crystal resonator is reduced.
By the grinding die, the quartz wafer with the thickness of 0.015 +/-0.001 mm can be ground.
The second template 200 is a unitary structure.
In one embodiment of the present application, as shown in fig. 1, the grinding mold further includes a driving sleeve 300, and the driving sleeve 300 is connected to the first mold plate 100 and/or the second mold plate 200 to rotate the first mold plate 100 and the second mold plate 200.
In this embodiment, the driving sleeve 300 is sleeved outside the first template 100 and the second template 200, and is matched with a driving part of a grinding device to drive the grinding mold, so as to grind the quartz wafer.
The driving sleeve 300 is a one-piece structure.
In one embodiment of the present application, as shown in fig. 6 and 7, drive sleeve 300 includes a drive ring 302 and a plurality of teeth 304; the driving ring 302 is clamped on the first template 100 and/or the second template 200; a plurality of teeth 304 are disposed on the outer wall of drive ring 302, disposed along the circumference of drive ring 302.
In this embodiment, the driving part of the grinding apparatus includes a sun gear and an inner gear 304 ring, a plurality of teeth 304 are provided on the outer wall of the driving ring 302, the plurality of teeth 304 can simultaneously cooperate with the sun gear and the inner gear 304 ring, the grinding mold is used as a planetary wheel, and a planetary gear mechanism is further formed, so that the grinding mold rotates around the axis of the sun gear and also rotates around the circumferential direction of the grinding mold itself, and further the thickness of the quartz wafer is ground more uniformly, and the grinding efficiency of the quartz wafer can be effectively improved.
In one embodiment of the present application, as shown in fig. 2, the first form 100 includes a first discharge hole 104, the first discharge hole 104 being disposed along a circumferential direction of the mounting hole 102; as shown in fig. 8, the second mold plate 200 includes a second discharge hole 206, the second discharge hole 206 being disposed on the body 202 along a circumferential direction of the mounting block 204; the first discharge hole 104 communicates with the second discharge hole 206.
In this embodiment, by providing the first discharge hole 104 and the second discharge hole 206, the waste material under grinding is prevented from being accumulated in the mounting groove, thereby reducing the influence of the waste material on the grinding effect of the quartz wafer.
In one embodiment of the present application, as shown in fig. 3, a positioning groove 106 is formed on one side of the first mold plate 100, and the body 202 is embedded in the positioning groove 106.
In this embodiment, the detents 106 enable positioning between the first template 100 and the second template 200, promoting concentricity between the first template 100 and the second template 200.
In one embodiment of the present application, the inner wall of the driving sleeve 300 is provided with a protrusion; a notch is arranged on the side wall of the positioning groove 106; a clamping groove is formed in the side wall of the body 202; wherein, the bulge passes through the notch and then is embedded in the clamping groove.
In this embodiment, the protrusion passes through the notch and is embedded in the slot, so that the driving sleeve 300 can drive the first mold plate 100 and the second mold plate 200 to rotate.
In one embodiment of the present application, the thickness of the body 202 is less than the depth of the detent 106.
In this embodiment, the thickness of the body 202 is smaller than the depth of the positioning groove 106, so that the interference of the body 202 protruding from the positioning groove 106 is avoided after the first template 100 and the second template 200 are assembled.
In one embodiment of the present application, the difference between the height of the mounting block 204 and the height of the mounting hole 102 is equal to the predetermined thickness of the quartz wafer.
In one embodiment of the present application, the polishing mold further includes a adjusting pad disposed between the first mold plate 100 and the second mold plate 200, and the adjusting pad is disposed with a space avoiding portion, which is adapted to the mounting block 204.
In this embodiment, the adjusting pad can adjust the depth of the mounting groove according to the preset thickness of the quartz wafer, so that the grinding mold can be suitable for grinding quartz wafers with different thicknesses.
Different grinding dies can be adopted to realize the adjustment of the depth of the mounting groove.
The preset thickness of the quartz wafer is equal to the ratio of 1670 to the fundamental frequency of the quartz wafer, i.e. the actual thickness of the finished quartz wafer. Wherein 1670 is an empirical constant derived from experience when estimating the thickness of the quartz wafer.
In one embodiment of the present application, the grinding mold further includes a positioning pin, one end of which is inserted into the first mold plate 100, and the other end of which is inserted into the second mold plate 200.
In this embodiment, the axis of the positioning pin is not coaxial with the first template 100, and is not coaxial with the second template 200, so that the positioning pin can position the first template 100 and the second template 200 in the circumferential direction, the plurality of mounting blocks 204 are in one-to-one correspondence with the plurality of mounting holes 102, errors generated after the different mounting holes 102 are matched with the mounting blocks 204 are reduced, and the precision of the grinding mold is further improved.
In an embodiment of the second aspect of the present invention, as shown in fig. 9, the present invention provides a method for grinding a quartz wafer, in which the quartz wafer is ground by the grinding mold according to any one of the above embodiments, the method for grinding a quartz wafer includes:
wherein the first preset value is greater than the second preset value, the second preset value is greater than the third preset value, and the third preset value is equal to the preset thickness value.
In the embodiment, the thickness of the quartz wafer depends on the depth of the mounting groove, namely the difference between the height of the mounting block and the height of the mounting hole, so that the overall thickness of the first template and the second template does not depend on the thickness of the quartz wafer, the grinding mold has higher strength, the grinding mold can stably drive the quartz wafer to move, the grinding qualified rate of the quartz wafer is improved, and the cost of the quartz wafer is reduced; and because the thickness of the quartz crystal wafer depends on the depth of the mounting groove, the quartz crystal wafers with different thicknesses can be obtained by adjusting the depth of the mounting groove, the thickness of the quartz crystal wafer is not limited by the thickness of the grinding die any more, and then the quartz crystal wafer with thinner thickness can be processed, so that the frequency of the quartz crystal resonator is improved, and the volume of the quartz crystal resonator is reduced. And the quartz wafer is ground for multiple times, so that the thickness of the quartz wafer is more uniform, and the quality of the quartz wafer is effectively improved.
The first and second preset values are dependent on the boule thickness of the quartz wafer.
The first preset value can be two thirds of the thickness of the blank of the quartz wafer; the second preset value may be one-half of the thickness of the boule of the quartz wafer.
The third preset value is equal to the preset thickness value, namely the thickness value of the finished quartz wafer.
The first grinding of the quartz wafer can be carried out by a planetary wheel and can also be carried out by a grinding die, and the second grinding and the third grinding of the quartz wafer can be carried out by the grinding die.
In one embodiment of the present application, grinding a quartz wafer comprises: placing a quartz wafer in the mounting hole; and driving the grinding die to rotate.
In the embodiment, the quartz wafer is placed in the mounting hole, the mounting hole is matched with the mounting hole to form the mounting groove, the grinding die can drive the quartz wafer to move, and meanwhile, the thickness of the quartz wafer is adjusted by changing the depth of the mounting groove, so that a thinner quartz wafer is obtained.
In one embodiment of the present application, after the third grinding of the quartz wafer to the preset thickness value, the grinding method of the quartz wafer further includes: recording the using times of the grinding die; and when the using times reach the preset times, the grinding die is overhauled.
In this embodiment, in the process of grinding, the grinding mold also generates a certain amount of wear, so after grinding a certain number of times, the grinding mold needs to be overhauled to improve the dimensional accuracy of the grinding mold.
The preset number of times may be determined according to the wear state of the grinding mold, or may be determined empirically.
The preset number of times is 5 to 10 times.
In one embodiment of the present application, the fundamental frequency of the quartz wafer is 80000KHz, then the thickness of the quartz wafer is 1670/80000KHz ≈ 0.021mm, and 1670 is an empirical constant, so that a technician can estimate the thickness of the quartz wafer according to the fundamental frequency of the quartz wafer.
The thickness of the quartz wafer blank was 0.06mm, the first preset value was 0.045mm, the second preset value was 0.03mm, and the third preset value was 0.021 mm.
In one embodiment of the present application, the depth of the mounting groove can also be adjusted to be less than the thickness of the quartz wafer.
The thickness of the quartz wafer is required to be 0.045mm after the first grinding, 0.030mm after the second grinding and 0.021mm after the third grinding; then, the quartz wafer is ground to 0.045mm by the conventional process, the types of grinding dies are reduced, the depth of the mounting groove is adjusted to 0.027mm, that is, the second preset value is 0.027mm, so as to grind the quartz wafer with the thickness of 0.030mm, and the depth of the mounting groove is adjusted to 0.018mm, that is, the second preset value is 0.018mm, so as to grind the quartz wafer with the thickness of 0.021 mm.
In one embodiment of the present application, the height of the installation hole is 7.980 ± 0.001mm, the height of the installation block is 7.962 ± 0.001mm, and the depth of the installation groove is 0.018 ± 0.001 mm.
In the description of the present invention, the terms "plurality" or "a plurality" refer to two or more, and unless otherwise specifically limited, the terms "upper", "lower", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are merely for convenience of description and simplification of description, but do not indicate or imply that the device or element referred to must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present invention; the terms "connected," "mounted," "secured," and the like are to be construed broadly and include, for example, fixed connections, removable connections, or integral connections; may be directly connected or indirectly connected through an intermediate. The specific meaning of the above terms in the present invention can be understood according to specific situations by those skilled in the art.
In the description of the present invention, the description of the terms "one embodiment," "some embodiments," "specific embodiments," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In the present disclosure, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. A grinding die for grinding a quartz wafer, comprising:
the first template is provided with a mounting hole, and the mounting hole is matched with the quartz wafer;
the second template comprises a body and a mounting block, the body is attached to the first template, and the mounting block is arranged on the body and embedded in the mounting hole;
wherein the height of the mounting block is less than the height of the mounting hole.
2. The grinding tool of claim 1, further comprising:
and the driving sleeve is connected to the first template and/or the second template so as to drive the first template and the second template to rotate.
3. The grinding die of claim 2, wherein the drive sleeve comprises:
the driving ring is clamped on the first template and/or the second template;
a plurality of teeth disposed on an outer wall of the drive ring, the plurality of teeth being disposed along a circumferential direction of the drive ring.
4. The grinding tool of claim 1,
the first template comprises first discharging holes which are arranged along the circumferential direction of the mounting holes;
the second template comprises a second discharge hole, and the second discharge hole is arranged on the body and arranged along the circumferential direction of the mounting block;
the first discharging hole is communicated with the second discharging hole.
5. The grinding tool of claim 2,
one side of first template is provided with the constant head tank, the body inlay in the constant head tank.
6. The grinding tool of claim 5,
a bulge is arranged on the inner wall of the driving sleeve;
a notch is formed in the side wall of the positioning groove;
a clamping groove is formed in the side wall of the body;
wherein, the bulge passes through the notch and then is embedded in the clamping groove.
7. The grinding tool of claim 5,
the thickness of the body is smaller than the depth of the positioning groove.
8. The grinding tool according to any of claims 1 to 7,
the difference between the height of the mounting block and the height of the mounting hole is equal to the preset thickness of the quartz wafer.
9. The grinding tool of any of claims 1 to 7, further comprising:
the adjusting pad is arranged between the first template and the second template, and a space avoiding position is arranged on the adjusting pad and matched with the mounting block.
10. The grinding tool of any of claims 1 to 7, further comprising:
and one end of the positioning pin is inserted in the first template, and the other end of the positioning pin is inserted in the second template.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020773358.9U CN212330680U (en) | 2020-05-12 | 2020-05-12 | Grinding die |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020773358.9U CN212330680U (en) | 2020-05-12 | 2020-05-12 | Grinding die |
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| Publication Number | Publication Date |
|---|---|
| CN212330680U true CN212330680U (en) | 2021-01-12 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202020773358.9U Active CN212330680U (en) | 2020-05-12 | 2020-05-12 | Grinding die |
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| CN (1) | CN212330680U (en) |
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- 2020-05-12 CN CN202020773358.9U patent/CN212330680U/en active Active
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