CN212231084U - Bidirectional H-bridge IGBT solid-state circuit breaker - Google Patents
Bidirectional H-bridge IGBT solid-state circuit breaker Download PDFInfo
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- CN212231084U CN212231084U CN202020454076.2U CN202020454076U CN212231084U CN 212231084 U CN212231084 U CN 212231084U CN 202020454076 U CN202020454076 U CN 202020454076U CN 212231084 U CN212231084 U CN 212231084U
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Abstract
The utility model relates to a two-way H bridge IGBT solid state circuit breaker that overcurrent capacity is strong, including four diode branch roads L1, L2, L3, L4, thereby diode branch road L1, diode branch road L2 meet with the same direction of conducting and form branch road J1, thereby diode branch road L3, diode branch road L4 meet with the same direction of conducting and form branch road J2, branch road J1, branch road J2 are reverse parallelly connected; the IGBT device comprises a plurality of IGBT clusters, wherein each IGBT cluster is provided with a plurality of IGBT devices which are connected with each other, one end of each IGBT cluster is connected to one junction between the branch J1 and the branch J2, and the other end of each IGBT cluster is connected to the other junction between the branch J1 and the branch J2. The utility model discloses a two-way H bridge IGBT solid state circuit breaker has that the ability is strong, the efficient of circuit breaker, and the electric current breaking capacity is strong, and switching element is few, and the characteristics that guard time is short can realize the microsecond level in the 100us and reliably turn-off.
Description
Technical Field
The utility model relates to a direct current electric wire netting fault protection field especially relates to a two-way H bridge IGBT solid state circuit breaker.
Background
The bidirectional direct current solid-state circuit breaker is different from a traditional alternating current power grid, when a direct current power grid is in a short circuit, because no voltage zero crossing point exists, a conventional circuit breaker cannot instantly turn off direct current heavy current for fault protection, so that the bidirectional direct current solid-state circuit breaker is produced, and the application of the bidirectional direct current solid-state circuit breaker which can rapidly turn off the direct current power grid in development, particularly the bidirectional direct current solid-state circuit breaker which can rapidly turn off the high-voltage high-power integrated power system of a ship without opening is provided.
In recent years, most of the bidirectional direct-current solid-state circuit breakers developed at home and abroad are hybrid circuit breakers, the turn-off time is generally more than 3 milliseconds, and the requirement of short-circuit fault protection of a large-scale ship direct-current power grid requiring microsecond-level rapid turn-off is difficult to meet. Especially for ships with special purposes, after the voltage of a direct current power grid of the ship rises to be more than 10kV, higher requirements are provided for quick turn-off of a direct current breaker and system reliability. Since the products are not available in the market at present, research and development of the microsecond-level quick-turn-off type solid-state circuit breaker are started at home and abroad.
SUMMERY OF THE UTILITY MODEL
The utility model discloses because of the safety consideration, aim at providing a two-way direct current solid state circuit breaker that complete machine throughput capacity is strong for realize the reliable turn-off in the 100 us.
The technical research and development idea of the utility model is as follows:
at present, there are four schemes of half-controlled device type structure, full-controlled device H bridge type structure, full-controlled device anti-parallel structure, full-controlled device anti-series connection structure mainly for the bidirectional dc solid-state circuit breaker in the prior art, and the electrical topology specifically is:
(1) semi-controlled device type structure
Referring to fig. 1, the core of the half-controlled device type structure is a half-controlled device connected in reverse parallel, as shown in the figure, two thyristor branches are provided, when energy flows in forward direction, a thyristor Ty1 connected in series in forward direction is turned on, energy flows in forward direction, if energy needs to flow in reverse direction, the thyristor Ty1 is turned off, the thyristor Ty2 is turned on, and energy can flow in reverse direction.
(2) H-bridge structure of full-control device
Referring to fig. 2, the full-control device H bridge structure requires four sets of diode assemblies and one set of full-control device to realize bidirectional current flow and breaking, wherein the diode assembly D1, the full-control device T1 and the diode assembly D4 realize a forward current flow loop, and the diode assembly D3, the full-control device T1 and the diode assembly D2 realize a reverse current flow loop.
(3) Full-control device anti-parallel structure
Referring to fig. 3, the anti-parallel structure of the full-control device needs two groups of diode assemblies and two groups of full-control devices to realize bidirectional current and disconnection, wherein the full-control device T1 and the diode assembly D1 are turned on when the current flows in the forward direction, the full-control device T2 is turned off at this time, the full-control device T2 and the diode assembly D2 are turned on when the current flows in the reverse direction, and the full-control device T1 is turned off at this time.
(4) Full-control device anti-series structure
Referring to fig. 4, the full-control device anti-series connection structure needs two groups of diode assemblies and two groups of full-control devices, when a forward current flows, the full-control device T1 and the diode assembly D2 are turned on, and at this time, the full-control device T2 is turned off; when reverse current flows, the full-control device T2 and the diode assembly D1 are switched on, and the full-control device T1 is switched off.
In the above four schemes, if a half-controlled device type structure is adopted to manufacture the 10KV/5KA bidirectional dc solid-state circuit breaker, the biggest technical bottleneck is that a half-controlled device, i.e. a thyristor, is adopted in the main circuit, so that it is difficult to ensure that the main circuit is reliably turned off within 100us, and the specific reasons are as follows:
the maximum on-state current critical rising rate (di/dt index) that a common thyristor can bear is 200A/uS, the turn-off time is generally between 500uS and 1ms, and the current critical change rate of the common thyristor during turn-off is smaller than the maximum on-state current critical rising rate index and cannot exceed 100A/uS. If the current is 10000A at the beginning of turn-off, and the conservative current turn-off change rate is 50us, the shortest turn-off time is 10000/50-200 us, namely, a common thyristor is adopted, even if enough back pressure is added to the thyristor instantly, the turn-off time of the thyristor is over 200us, even the thyristor can not be turned off within 200us, no back pressure turn-off application case exists at present, and a large number of tests are needed to verify.
For a fast thyristor, the critical rising rate of the maximum on-state current is 1000A/us, the on-state average current is 2845A, the repeated peak voltage of the off-state is 3500V to 4500V, the threshold voltage VT0 of the on-state is 2.18V, the peak voltage VTM of the on-state is 3.40V (on-state tube drop), the turn-off time of typical application is 150us, obviously, the fast thyristor cannot realize reliable turn-off of the main loop in 100us, and the on-state tube drop of the fast thyristor is more than twice of that of the ordinary thyristor, and is not suitable for long-term through-flow, even, 6 series connections are needed to meet the application requirement of a dc circuit breaker of 10KV/5KA, and the loss of the main loop will reach about 3.4V × 6 × 5KA ═ 102 KW.
In summary, according to the current technical level of a common thyristor or a fast thyristor, the two semiconductor switches cannot meet the technical application requirement of a 10KV/5KA bidirectional direct current solid-state circuit breaker on reliable shutoff within 100 us.
For three schemes of a full-control device H bridge structure, a full-control device anti-parallel structure and a full-control device anti-series connection structure, comparison can be performed from the aspects of the number of power devices, the design complexity, the reliability, the economy and the like, as shown in Table 1:
table 1 comparison of three bidirectional solid state circuit breaker schemes
From table 1, it can be seen that:
(1) from an economic cost perspective, the three bidirectional solid state circuit breaker solutions have the same number of power devices, but differ in that the anti-parallel and anti-series configurations require twice as many fully controlled devices. Because the price of the full-control device is high, the economic cost of the bidirectional solid-state circuit breaker with the anti-parallel structure and the anti-series structure is relatively high, and the price cost of the H-bridge structure is relatively lowest.
(2) From the structural design angle analysis, the three bidirectional solid-state circuit breaker schemes all need a plurality of groups of full-control device parallel connection and diode device parallel connection modes to realize large-current breaking, so the structural design of the parallel power assemblies and the arrangement among the parallel assemblies make the structural design of the three schemes relatively difficult. Even though the overall structure layout of the anti-parallel structure and the anti-series connection structure can be simplified by using the reverse resistance type or reverse conduction type full control devices, the rated current of the reverse resistance type or reverse conduction type full control devices is relatively low, so that more full control devices are required to be connected in parallel, the structural design difficulty of parallel components is increased, the design difficulty of the current sharing of each device branch between the parallel power components is increased, and the reliability of the two schemes is reduced. According to the design index of the 15KA bidirectional solid-state circuit breaker, the occupied area of the H-bridge structure is smaller than that of the other two schemes.
(3) From the technical difficulty, the design of the bidirectional H-bridge structure needs to solve the problem of reverse overvoltage of the fully-controlled device and the problem of current sharing of the parallel power devices during fast turn-off, while the design of the anti-parallel structure and the anti-series structure needs to solve the problems of reverse overvoltage and parallel current sharing of the fully-controlled device and also needs to solve the logic control of turn-on and turn-off of two groups of fully-controlled devices during current commutation.
Compared with factors such as the size and the like in combination with economic cost and control difficulty, the H-bridge structure has more advantages compared with other two bidirectional solid-state circuit breakers, and therefore the scheme of the H-bridge structure is selected to realize bidirectional through-current and on-off of the 10kV/5kA bidirectional direct-current solid-state circuit breaker.
After the topology of the solid-state circuit breaker is selected, a proper full-control device needs to be selected and applied to the H-bridge structure.
At present, the fully-controlled devices include IGBT devices, IGCT devices, and the like, which have performance advantages, and the following comparative analysis is performed on the IGBT devices and the IGCT devices.
Because the single full accuse device can't satisfy the requirement of opening and shutting down of 5kA heavy current, needs a plurality of full accuse devices to connect in parallel to realize that the branch of its heavy current reaches the through-flow requirement, therefore the utility model discloses select the full accuse device of crimping formula encapsulation, this packaging form easily realizes the parallelly connected structure of full accuse device.
Aiming at the technical requirements of a 10kV/5kA circuit breaker, 2 types of compression joint type packaging full-control devices with the off-state peak voltage of 4.5kV, which are mainstream in the current market, are selected, wherein the 2 types of compression joint type packaging full-control devices are an IGBT device (ABB) with the model number of 5SJA3000L450300 and an IGCT device (ABB) with the model number of 5SHY35L4522, and the parameter pair ratio of the two devices is shown in a table 2:
TABLE 2 comparison of fully-controlled device parameters
As can be seen from table 2, in comparison with the instantaneous loss at turn-off, the IGCT device has lower turn-off loss but weaker overcurrent, while the IGBT device has stronger overcurrent but higher turn-off loss.
Due to safety considerations, the requirement of preferentially ensuring the overcurrent capacity of the whole machine is combined with the characteristic that the solid-state circuit breaker is opened and closed at one time, and the IGBT device is selected and applied to the H-bridge structure.
Based on the above, a scheme of a bidirectional H-bridge IGBT solid-state circuit breaker is proposed, which includes four diode branches L1, L2, L3, and L4, where the diode branch L1 and the diode branch L2 are connected in the same conduction direction to form a branch J1, the diode branch L3 and the diode branch L4 are connected in the same conduction direction to form a branch J2, and the branch J1 and the branch J2 are connected in parallel in an inverse direction; the IGBT device comprises a plurality of IGBT clusters, wherein each IGBT cluster is provided with a plurality of IGBT devices which are connected with each other, one end of each IGBT cluster is connected to one junction between the branch J1 and the branch J2, and the other end of each IGBT cluster is connected to the other junction between the branch J1 and the branch J2.
Furthermore, a parallel structure is formed between IGBT devices in the IGBT cluster to enlarge the flow rate.
Furthermore, the parameters of all IGBT devices in the parallel structure are consistent, and the circuit layout is symmetrical, so that the parallel current sharing of the IGBTs is realized.
Furthermore, the parallel structures are provided with a plurality of groups, and the parallel structures of all groups are mutually connected in series to improve the rated working voltage.
Further, the number of the IGBT devices in each group of parallel structures is the same.
Further, for IGBT series static voltage sharing, two ends of each group of parallel structures are connected in parallel with a voltage sharing resistor RS with a resistance value smaller than the drain resistance of the IGBT device, and the resistance values of the voltage sharing resistors RS of the parallel structures of the groups are the same.
Further, in order to realize dynamic voltage equalization, the parallel structure is connected in parallel with an RC resistance-capacitance absorption branch, and similarly, the diode in each diode branch is connected in parallel with an RC resistance-capacitance absorption branch.
Further, in order to absorb transient spike voltage, the parallel structure is connected with a piezoresistor in parallel, and piezoresistors are connected with two sides of the IGBT cluster in parallel.
Further, a series structure is formed among IGBT devices in the IGBT cluster.
Further, each diode branch is provided with a plurality of diodes, and the diodes are mutually connected in series in the same conduction direction to form a diode component.
Further, in order to ensure reliable protection of the system, a current-limiting inductor is connected in series on the input end and/or the output end of the bidirectional H-bridge solid-state circuit breaker.
Has the advantages that:
the utility model discloses a two-way H bridge IGBT solid state circuit breaker has that the ability is strong, the efficient of circuit breaker, and the electric current breaking capacity is strong, and switching element is few, and the characteristics that guard time is short can realize the microsecond level in the 100us and reliably turn-off.
The above description is only an overview of the technical solutions of the present invention, and in order to make the technical means of the present invention more clearly understood, the present invention may be implemented according to the content of the description, and in order to make the above and other objects, features, and advantages of the present invention more obvious and understandable, the following detailed description of the present invention is given.
Drawings
Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the invention. Also, like reference numerals are used to refer to like parts throughout the drawings.
In the drawings:
FIG. 1 illustrates an electrical topology of a prior art semi-controlled device type structure;
FIG. 2 illustrates the electrical topology of a prior art fully controlled device H-bridge configuration;
FIG. 3 illustrates an electrical topology of a prior art anti-parallel configuration of fully controlled devices;
FIG. 4 illustrates an electrical topology of a prior art anti-series configuration of fully controlled devices;
fig. 5 shows the electrical topology of the bi-directional H-bridge IGBT solid state circuit breaker of the present invention;
fig. 6 shows a state diagram of the turn-on and turn-off process of the IGBT device.
Detailed Description
In order to make the technical problem, technical solution and advantageous effects solved by the present invention more clearly understood, the following embodiments and drawings are combined to further explain the present invention in detail. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
The scheme of the bidirectional H-bridge IGBT solid-state circuit breaker of this embodiment is shown in fig. 5, and is composed of four groups of diode assemblies and one group of IGBT clusters.
Each group of diode components is provided with a plurality of diodes which are connected in series and have the same conduction direction. The component with diodes D1-D3 is diode component L1, the component with diodes D4-D6 is diode component L2, the component with diodes D7-D9 is diode component L3, and the component with diodes D10-D12 is diode component L4. Diode assembly L1 and diode assembly L2 are connected in the same conduction direction to form branch J1, diode assembly L3 and diode assembly L4 are connected in the same conduction direction to form branch J2, and branch J1 and branch J2 are connected in anti-parallel.
The IGBT cluster is formed by sequentially connecting a plurality of groups of IGBT parallel assemblies in series, wherein each group of IGBT parallel assemblies is provided with a plurality of IGBT devices which are mutually connected in parallel. One end of the IGBT cluster is connected to one junction between the branch J1 and the branch J2, and the other end of the IGBT cluster is connected to the other junction between the branch J1 and the branch J2.
Among the above, the model of the IGBT device is selected as TG3000SW45ZC-P200 of the middle car, and the main technical parameters thereof are shown in table 3 below.
TABLE 3 main technical indexes of IGBT device TG3000SW45ZC-P200
Because the rated operating current of the bidirectional H-bridge IGBT solid-state circuit breaker is 5kA, the maximum breaking current is 30kA, the number of parallel devices is 30kA/14kA which is 2.14 calculated according to the short-circuit current 14kA of the IGBT, and an integer of 3 is taken, namely each group of IGBT parallel components needs 3 IGBT devices to be connected in parallel.
When the bidirectional H-bridge IGBT solid-state circuit breaker adopts 3 IGBT devices connected in parallel, when rated current is 5KA, the current on each IGBT is only 5000A/3-1667A, the current sharing coefficient deviation of 0.2 is considered, only 2084A is arranged on each IGBT, and the current is far smaller than the collector current of the IGBT devices.
The rated operating voltage of the bidirectional H-bridge IGBT solid-state circuit breaker is 10kV, the reverse turn-off voltage reaches 20kV when the circuit breaker is turned off, for the sake of stability, a margin of voltage-sharing coefficient deviation of 0.2 is reserved when the number of the IGBTs connected in series is calculated, 24kV is taken, and because the off-state repeated peak voltage of the IGBT adopting TG3000SW45ZC-P200 is 4500V, the number of the IGBTs connected in series is 24000/4500-5.33, and 6 IGBT solid-state circuit breakers are connected in series.
Therefore, the bidirectional H-bridge IGBT solid-state circuit breaker adopts a three-parallel six-string mode of TG3000SW45ZC-P200 IGBTs, namely 3 IGBTs are firstly connected in parallel to form a group to enlarge the flow rate, and then 6 groups are connected in series to improve the rated working voltage, so that the problems of large current and high voltage are solved.
Further, due to the fact that large current is transmitted, the IGBTs are connected through non-inductive copper bars, and the non-inductive copper bars of the IGBT parallel assemblies are guaranteed to be consistent and symmetrical.
For the diode, the model is ZPE6500-85, and the main electrical parameter technical indexes are shown in Table 4.
| Symbol | Parameter name | Parameter(s) |
| VDRM | Off-state repetitive peak voltage | 8000V |
| IF(AV) | Average current in forward direction | 6510A |
| IF(RMS) | Forward root mean square current | 10200A |
| IFSM | Forward non-repetitive surge current | 112kA |
| VFO | Threshold voltage | 1.05V |
| rF | Slope thermal resistance | 0.09mΩ |
| RthJC | Crusting thermal resistance | 2.8K/kW |
| RthCH | Thermal contact resistance | 0.5K/kW |
TABLE 4 technical index of diode ZPE6500-85
Because the rated operating current of the bidirectional H-bridge solid-state circuit breaker is 5kA, the forward average current of the diode is 6.5kA, the forward non-repeated surge current is 112kA and is far larger than the maximum turn-off current of the circuit breaker by 30kA, and the rated current is smaller than the forward average current of the diode, the diodes do not need to be connected in parallel in the aspect of current.
Considering that the voltage of the breaker rises to 20kV when the breaker is turned off, and the peak voltage of the off-state repetition of the diode is only 8000V, the requirement of withstand voltage is required to be met through the series connection of the diodes, and since Np is 20000/8000 is 2.5, 3 ZPE6500-85 diodes are taken for each group of diode assemblies to be connected in series.
In order to ensure reliable protection of the system, a current-limiting inductor (not shown) is connected in series at the input end and/or the output end (i.e., the Port1 end and/or the Port2 end) of the bidirectional H-bridge solid-state circuit breaker in consideration of hardware response time (sensor response delay, line propagation delay, control hardware delay, IGBT action delay, and the like). When the current-limiting inductance is calculated, the delay of the process is 20us (the detection time is 17us + the control output delay is 1.7us + the IGBT is turned off by 1.3us) from the moment when the loop current exceeds the protection threshold value by 6.75kA (1.35 times of the rated working current) to the moment when the IGBT is completely turned off, the loop current at the actual complete turn-off moment of the IGBT is planned to rise to the conservative limit value of 10kA, the voltage at two ends (IGBT group) of the switch rises to 20kV at the moment, and the current-limiting inductance required to be added by the circuit breaker is calculated according to the loop current and the control output delay.
Because the IGBT device generates transient overvoltage when being turned off, an RC resistance-capacitance absorption branch circuit is connected in parallel on each group of IGBT parallel components, such as a branch circuit formed by connecting R1-R5 and C1-C5 in series, on one hand, the IGBT device is ensured not to be damaged due to overvoltage through dynamic voltage sharing, on the other hand, the time of a solid-state circuit breaker for converting current to a resistance branch circuit is increased, and the di/dt during converting current is reduced.
Similarly, because the diodes have difference of reverse recovery charge during the turn-off process, the transient voltage distribution during the turn-off process is unbalanced, and in order to solve the problem, each diode is also connected with an RC resistance-capacitance absorption branch circuit, such as R7-R18, C7-C18, in parallel so as to absorb the transient overvoltage.
To further absorb transient spike voltages, a zinc oxide varistor, such as MOV1-MOV5, is connected in parallel across each set of IGBT shunt components. According to a typical V-I characteristic curve of the zinc oxide piezoresistor, when the solid-state circuit breaker is turned off and the peak voltage of the IGBT parallel assembly exceeds the rated voltage of the zinc oxide piezoresistor, the piezoresistor works in a breakdown region, and the piezoresistor can rapidly absorb peak energy at the moment, so that the IGBT device is prevented from being damaged due to overvoltage. When the transient voltage at two ends of the IGBT device is lower than the rated voltage of the piezoresistor, the piezoresistor works in a pre-breakdown area, the voltage is equivalent to an insulation resistor above M ohm level, and the current passing through the piezoresistor is microampere level.
In order to realize that the IGBT cluster absorbs transient spike voltage in the whole, zinc oxide piezoresistors, such as MOV7-MOV8, are connected in parallel on two sides of the IGBT cluster. Similarly, in order to realize the overall absorption of transient spike voltage by the diode assemblies, zinc oxide varistors such as MOV9-MOV12 are connected in parallel on two sides of each group of diode assemblies.
Because the IGBT leakage resistance R is in the turn-off state of the series IGBToff(Roff＝UCES/ICES，UCESAnd ICESBlocking voltage and off-state leakage current of collector-emitter, respectively) and thus causes voltage imbalance, to solve the problem, one resistance value is much smaller than the series IGBT leakage resistance R in parallel connection at both ends of each group of IGBT parallel assembliesoffVoltage equalizing resistor RSVoltage equalizing resistor R of each group of IGBT parallel assemblySThe resistance values are the same, such as R19-R23 in FIG. 5, after a plurality of groups of IGBT parallel assemblies are connected in series, the voltage distribution on the IGBT parallel assemblies is mainly determined by parallel equalizing resistors RSAnd the static voltage-sharing of the IGBT series connection is realized.
Meanwhile, an active self-adaptive voltage balance control technology is adopted, and the delay time t in the IGBT switching process is effectively controlled by adjusting the IGBT grid voltagedAnd the voltage change rate dv/dt, realizes the series voltage balance of the IGBT, and specifically leads the voltage V of the collector and emitter of the IGBT to be controlled by a closed loopCEQuickly following the reference voltage Vref, and generating a positive gate voltage signal to turn on the IGBT when the voltage at the IGBT end is higher than the Vref; when the voltage of the IGBT terminal is lower than Vref, a negative gate voltage signal is generated to turn off the IGBT, and further, the active voltage equalizing of the series connection of the IGBTs is realized.
In order to achieve parallel current sharing of the IGBTs, the parameters of the IGBTs in the same group of IGBT parallel assemblies are required to be consistent, the circuit layout is symmetrical, namely the IGBTs are required to be positive temperature coefficient devices, the same batch of wafers are required, and consistency matching in the aspects of turn-on time, turn-off time, on-state impedance, pre-trigger voltage, leakage current and the like is guaranteed.
In order to realize voltage equalization when the diodes are in a forward blocking state or a reverse blocking state, a traditional steady-state voltage equalization method is adopted for each diode, namely, a voltage equalization resistor Rp is connected in parallel to each diode connected in series, the resistance values of the voltage equalization resistors Rp are the same, such as R25-R36, and in order to obtain better steady-state voltage equalization, the current in the Rp is larger than the leakage current of the diode assembly.
Similarly, the diodes require the same batch of wafers, and ensure consistent matching in the aspects of turn-on time, turn-off time, on-state impedance, leakage current and the like.
Based on the structure, the on-off state process of the IGBT device in the bidirectional H-bridge IGBT solid-state circuit breaker can be obtained as shown in FIG. 6. In the very short time of the device turn-off process, the current on the IGBT device is reduced, the IGBT device is transferred to an RC loop to circulate, along with the continuous circulation of the current, accumulated charges on the C are more and more, the voltage on the RC is higher, finally, the MOV is switched on, the voltage is clamped, and redundant energy is discharged. And for the energy accumulated on the C, after the external power supply disappears, the energy is slowly discharged through the static voltage-sharing resistor.
The specific workflow is as follows:
(1) the switching-on process of the bidirectional H-bridge IGBT solid-state circuit breaker is as follows:
referring to fig. 5, taking the current flowing from Port1 to Port2 as an example, the current flows through diode assembly L1, IGBT cluster T1-E18, and diode assembly L4, and the RC snubber loop in the IGBT cluster discharges to the IGBT to form an internal loop until the charge on capacitor C is completely discharged.
(2) The switching-off process of the bidirectional H-bridge IGBT solid-state circuit breaker comprises the following steps:
when the IGBT device receives a turn-off signal, the IGBT assembly is rapidly turned off, the current flowing through the IGBT is forcibly transferred to the RC loop, the voltage of the RC loop rapidly rises, and after the voltage rises to a certain degree, the MOV is turned on, redundant energy is discharged, the voltage is clamped, and the IGBT and the loop are protected.
The bidirectional H-bridge IGBT solid-state circuit breaker of this embodiment has the following advantages:
(1) the rated voltage can reach 10KV level, and the rated current can reach 5KA level.
(2) The overcurrent capacity is strong, even if ten times of overcurrent can be normally shut off, and the whole machine has no continuous risk of shutting off.
(3) On-state voltage V of single IGBT parallel assemblyCE(sat)When the voltage is 2.3V, the on-state loss of the direct current breaker IGBT under the rated working condition is about 2.3 × 6 × 5000A, 69 kW; when the circuit breaker works in an on state, the diode loss is calculated to be 1.05 multiplied by 5000 multiplied by 6 to 31.5kW according to rated current; the loss of the control circuit, the static voltage-sharing circuit, the dynamic voltage-sharing circuit and the like is small, and 2kW is taken; the total losses of the circuit breaker are then: 69+31.5+2 is 102.5 kW; the efficiency of the circuit breaker can reach: (10 × 5000-102.5)/(10 × 5000) ═ 97.56%.
(4) The protection time is short, and the whole time from failure to switch-off is within 100 microseconds and far lower than 3 milliseconds of a hybrid circuit breaker on the market.
(4) The current breaking capacity is strong, the current breaking capacity reaches 30kA, namely when the current of the main loop reaches 30kA, the switch can break.
(5) H bridge type circuit breaker structure, switching element saves half.
(6) The method is initiated by a 6-series 3-parallel mode, 3 IGBTs are firstly connected in parallel to form a group so as to enlarge the flow rate, then 6 groups are connected in series so as to improve the rated working voltage, and the problems of large current and high voltage are solved.
(7) The circuit breaker is configured with a current limiting inductance to limit the rising current on a load short circuit.
(8) The pressure equalizing consistency reaches more than 0.9, and the flow equalizing consistency is not lower than 0.9.
It should be finally noted that the above embodiments are only intended to illustrate the technical solution of the present invention and not to limit the scope of the present invention, and although the present invention has been described in detail with reference to the preferred embodiments, those skilled in the art should understand that the technical solution of the present invention can be modified or replaced with other equivalents without departing from the spirit and scope of the technical solution of the present invention.
Claims (11)
1. Two-way H bridge IGBT solid state circuit breaker, its characterized in that:
the circuit comprises four diode branches L1, L2, L3 and L4, wherein the diode branch L1 and the diode branch L2 are connected in the same conduction direction to form a branch J1, the diode branch L3 and the diode branch L4 are connected in the same conduction direction to form a branch J2, and the branch J1 and the branch J2 are connected in parallel in an opposite direction;
the IGBT device comprises a plurality of IGBT clusters, wherein each IGBT cluster is provided with a plurality of IGBT devices which are connected with each other, one end of each IGBT cluster is connected to one junction between the branch J1 and the branch J2, and the other end of each IGBT cluster is connected to the other junction between the branch J1 and the branch J2.
2. The bidirectional H-bridge IGBT solid-state circuit breaker of claim 1, characterized in that: and parallel structures are formed among IGBT devices in the IGBT cluster.
3. The bidirectional H-bridge IGBT solid-state circuit breaker of claim 2, characterized in that: the parameters of all IGBT devices in the parallel structure are consistent, and the circuit layout is symmetrical.
4. The bidirectional H-bridge IGBT solid-state circuit breaker of claim 2, characterized in that: the parallel structures are provided with a plurality of groups, and the parallel structures of each group are mutually connected in series.
5. The bidirectional H-bridge IGBT solid-state circuit breaker of claim 4, characterized in that: the number of the IGBT devices in each group of parallel structures is the same.
6. The bidirectional H-bridge IGBT solid-state circuit breaker of claim 4, characterized in that: two ends of each group of parallel structures are connected in parallel with a voltage-sharing resistor R with the resistance value smaller than the drain resistance of the IGBT deviceSEach group of voltage equalizing resistors R with parallel structureSThe resistance values are the same.
7. The bidirectional H-bridge IGBT solid-state circuit breaker according to any one of claims 2-6, characterized in that: the parallel structure is connected with an RC resistance-capacitance absorption branch in parallel.
8. The bidirectional H-bridge IGBT solid-state circuit breaker according to any one of claims 2-6, characterized in that: the parallel structure is connected with a piezoresistor in parallel; and/or piezoresistors are connected in parallel at two sides of the IGBT cluster.
9. The bidirectional H-bridge IGBT solid-state circuit breaker according to claim 1 or 2, characterized in that: and a series connection structure is formed between IGBT devices in the IGBT cluster.
10. The bidirectional H-bridge IGBT solid-state circuit breaker of claim 1, characterized in that: each diode branch is provided with a plurality of diodes which are mutually connected in series in the same conduction direction to form a diode component; and/or the diode in each diode branch is connected with an RC resistance-capacitance absorption branch in parallel.
11. The bidirectional H-bridge IGBT solid-state circuit breaker of claim 1, characterized in that: and a current limiting inductor is connected in series on the input end and/or the output end of the bidirectional H-bridge solid-state circuit breaker.
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| CN202020454076.2U CN212231084U (en) | 2020-03-31 | 2020-03-31 | Bidirectional H-bridge IGBT solid-state circuit breaker |
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| CN202020454076.2U CN212231084U (en) | 2020-03-31 | 2020-03-31 | Bidirectional H-bridge IGBT solid-state circuit breaker |
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Effective date of registration: 20210416 Address after: No.10 Hengshan Road, Xuhui District, Shanghai 200030 Patentee after: NO. 704 RESEARCH INSTITUTE OF CHINA SHIPBUILDING INDUSTRY Corp. Patentee after: HUNAN FULLDE ELECTRIC Co.,Ltd. Address before: 523899 Guangdong City, Humen province Baisha Town, the village of industrial zone, three Patentee before: GUANGDONG FULLDE ELECTRONICS Co.,Ltd. |