CN212230440U - Single crystal cell piece and photovoltaic module - Google Patents
Single crystal cell piece and photovoltaic module Download PDFInfo
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- CN212230440U CN212230440U CN201821941596.5U CN201821941596U CN212230440U CN 212230440 U CN212230440 U CN 212230440U CN 201821941596 U CN201821941596 U CN 201821941596U CN 212230440 U CN212230440 U CN 212230440U
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- 210000002858 crystal cell Anatomy 0.000 title claims abstract description 29
- 239000013078 crystal Substances 0.000 claims abstract description 48
- 210000004027 cell Anatomy 0.000 claims description 57
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 32
- 238000005520 cutting process Methods 0.000 description 25
- 238000000034 method Methods 0.000 description 22
- 238000004519 manufacturing process Methods 0.000 description 17
- 238000009792 diffusion process Methods 0.000 description 11
- 239000010408 film Substances 0.000 description 11
- 238000002360 preparation method Methods 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 238000003698 laser cutting Methods 0.000 description 6
- 239000002994 raw material Substances 0.000 description 6
- 238000007650 screen-printing Methods 0.000 description 6
- 239000011521 glass Substances 0.000 description 5
- 238000002161 passivation Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000005245 sintering Methods 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000009501 film coating Methods 0.000 description 4
- 239000007888 film coating Substances 0.000 description 4
- 238000003475 lamination Methods 0.000 description 4
- 238000007639 printing Methods 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 125000004437 phosphorous atom Chemical group 0.000 description 2
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000005096 rolling process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000005431 greenhouse gas Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000003345 natural gas Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The utility model relates to a single crystal cell piece (5), the crystal orientation at four edges of single crystal cell piece is <110> to perpendicular to the edge of single crystal cell piece has the part that weakens of certain length. Furthermore, the utility model discloses still relate to a photovoltaic module, photovoltaic module is made by this kind of single crystal battery piece.
Description
Technical Field
The utility model relates to a single crystal cell piece and photovoltaic module.
Background
With the increasing consumption of conventional fossil energy such as global coal, oil, natural gas and the like, the ecological environment is continuously deteriorated, and particularly, the sustainable development of the human society is seriously threatened due to the increasingly severe global climate change caused by the emission of greenhouse gases. Various countries in the world make respective energy development strategies to deal with the limitation of conventional fossil energy resources and the environmental problems caused by development and utilization. Solar energy has become one of the most important renewable energy sources by virtue of the characteristics of reliability, safety, universality, long service life, environmental protection and resource sufficiency, and is expected to become a main pillar of global power supply in the future.
Under the background of energetically promoting and using the green energy of solar energy, half photovoltaic module technique and fold tile photovoltaic module technique can both promote the subassembly power, all need cut the whole piece of solar wafer when half photovoltaic module and fold tile photovoltaic module preparation.
At present, the cutting mode of the monocrystalline silicon wafer of the solar cell is mainly that the growth edge line of a monocrystalline silicon round bar which is used as a raw material and grows in a <100> crystal orientation by a czochralski method is aligned with a crystal support edge line on a crystal support of a squaring machine for squaring, the obtained monocrystalline silicon square bar is subjected to rolling by a rolling machine to obtain a square bar with uniform size, and the square bar is subjected to wire cutting and slicing to obtain the monocrystalline silicon wafer for producing the cell. According to the national standard GB/T26071-2010 of the silicon single crystal cutting piece for the solar cell, the crystal orientations of the four edges of the cut single crystal silicon piece are <100> +/-2 degrees.
At present, the cutting method of the battery piece is usually performed by adopting a mechanical cutting method or a laser cutting method, but the cutting by adopting the methods causes certain loss on the conversion efficiency of the battery piece in different degrees.
Particularly, in the current laser cutting method of the solar cell, a focused high-power laser beam is mainly used for irradiating the solar cell, the laser beam is absorbed, the temperature of a material at an irradiation point is increased sharply after the laser beam exceeds a threshold power density, the material starts to be gasified and forms a gap after the temperature reaches a boiling point, a pre-cut is formed first along with the relative movement of the laser beam and the solar cell, and then the solar cell is split according to the direction of the cut. Because laser cutting has the advantages of narrow cutting seam, high cutting speed, good verticality of the edge of the cutting seam, no tool abrasion and the like, the laser cutting method is widely applied to solar cell slicing of a photovoltaic module, but with the progress of the solar cell technology, various high-efficiency cells adopt different passivation processes to reduce interface carrier recombination, for example, PERC (passivated emitter back contact cell)/TopCon (tunneling oxide layer passivated contact cell) adopt nitride or oxide film, SHJ (silicon-based heterojunction solar cell) adopt low-temperature amorphous silicon film passivation process, high-temperature cutting damages the passivation film of the cell, and the efficiency loss becomes large.
In view of this, there is a need for an improved cutting method for single crystal battery pieces.
SUMMERY OF THE UTILITY MODEL
The utility model aims at providing a modified single crystal battery piece and a photovoltaic module who is made by this kind of single crystal battery piece, the efficiency loss when cutting this kind of single crystal battery piece reducible cutting battery piece promotes the whole power of subassembly.
The above object is achieved by a single crystal cell sheet according to the present invention, which has a crystal orientation of <110> at four edges and a weakened portion of a certain length at an edge perpendicular to the single crystal cell sheet.
According to a preferred embodiment of the present invention, the weakened portion may be an opening or a cut mark.
According to a preferred embodiment of the present invention, the cut may be a continuous or segmented score.
According to a preferred embodiment of the invention, there may be a further weakened portion on a further edge parallel to said edge, opposite to and in line with said weakened portion.
The utility model discloses according to the characteristic of silicon crystal <110> crystal orientation natural crack piece, at the edge perpendicular to of single crystal battery piece the edge is cut out and is weakened the part, slightly applys mechanical stress again and just can make the battery piece split along a straight line nature, and the direction perpendicular to of the direction of splitting of battery piece, also the direction perpendicular to of cutting joints between two small battery pieces that the cutting formed promptly the edge. Therefore, the efficiency loss of the solar cell in the high-temperature cutting process can be reduced, and the overall power of the assembly is improved.
According to another aspect of the present invention, a photovoltaic module is further provided, wherein the photovoltaic module is made of the single crystal cell according to any one of the above embodiments, wherein mechanical stress is applied to the single crystal cell, and the single crystal cell is split into small cells at the weakened part along a direction perpendicular to the weakened part of the edge, and the photovoltaic module is composed of a plurality of small cells.
According to a preferred embodiment of the present invention, the photovoltaic module may be a half photovoltaic module or a laminated photovoltaic module.
According to the utility model discloses a single crystal battery piece can be through following step preparation and cutting:
a raw material providing step: providing a wafer rod with a crystal orientation of <100> as a raw material;
angle adjustment: enabling the growth ridge of the wafer rod and the adjacent ridge of the crystal support of the squaring machine to be spaced at an angle of 45 degrees along the circumferential direction;
squaring and slicing: squaring and slicing the wafer rod to obtain a monocrystalline silicon wafer, wherein the crystal directions of four edges of the monocrystalline silicon wafer are <110 >;
manufacturing a battery piece: manufacturing the monocrystalline silicon wafer into a monocrystalline cell piece, wherein a weakened part is cut out perpendicular to the edge of the monocrystalline cell piece;
splitting: applying a mechanical stress, the single crystal cell sheet splitting at the weakened portion in a weakened portion direction perpendicular to the edge.
Preferably, the weakened portion may be an opening or a cut.
Preferably, the cut may be a continuous or segmented score.
Preferably, another weakened portion may also be cut on another edge parallel to the edge, opposite the weakened portion. That is, a weakened portion is cut at each end of the cut slit, and then mechanical stress is applied to break the single crystal cell piece.
Preferably, the above steps of cutting out the weakened portions and applying mechanical stress to break the single crystal cell sheet may be repeated until a small cell sheet of a desired size is obtained.
Preferably, in the angle adjusting step, before the squaring, the wafer rod may be placed on the crystal support of the squaring machine, so that the growth ridge line of the wafer rod coincides with the crystal support ridge line of the crystal support of the squaring machine, and then the wafer rod is rotated clockwise or counterclockwise by 45 degrees.
Preferably, in the cell manufacturing step, the monocrystalline silicon wafer can be manufactured into an AlBSF (aluminum back surface field) cell through the steps of surface texturing, diffusion junction manufacturing, phosphorosilicate glass removal, antireflection film deposition, screen printing and the like.
Alternatively, in the cell manufacturing step, the monocrystalline silicon wafer is subjected to texturing, diffusion, etching, back passivation, film coating, laser grooving, printing sintering and the like to manufacture the PERC cell.
Alternatively, in the step of manufacturing the cell, the single crystal silicon wafer is made into the TopCon cell through the steps of texturing, diffusion junction manufacturing, etching to remove borosilicate glass, tunnel junction preparation, ion implantation, annealing, cleaning, film coating, screen printing sintering and the like.
Alternatively, in the cell manufacturing step, the monocrystalline silicon wafer is manufactured into a heterojunction cell through texturing, amorphous silicon thin film lamination, transparent conductive film lamination and electrode printing.
Preferably, the photovoltaic module can be prepared by a preparation method comprising the steps of: providing a wafer rod with a crystal orientation of <100> as a raw material; enabling the growth ridge line of the wafer rod and the adjacent ridge line of the wafer support of the squaring machine to be spaced at an angle of 45 degrees along the circumferential direction, and then squaring and slicing the wafer rod to obtain a monocrystalline silicon wafer, wherein the crystal directions of four edges of the monocrystalline silicon wafer are <110 >; manufacturing the monocrystalline silicon wafer into a monocrystalline cell piece, wherein a weakened part is cut out perpendicular to the edge of the monocrystalline cell piece; applying mechanical stress, and then cracking the single crystal cell piece into a small cell piece at the weakened part along a direction perpendicular to the edge; and forming a photovoltaic module by a plurality of small battery plates.
As described above, the utility model discloses according to the characteristic of silicon crystal <110> crystal orientation natural lobe, through adjusting the silicon chip manufacturing process, especially the marginal crystal orientation of evolution, the direction that makes the predetermined cutting seam of solar cell of preparation is parallel with crystal <110> crystal orientation, then cut out the part that weakens of certain degree of depth and length at the one end of cutting seam or both ends through for example mechanical cutting or laser cutting, then through applying mechanical stress, make the battery piece split along predetermined cutting seam, thereby low temperature section purpose has been reached, the damage of high temperature to the battery piece has been reduced, the efficiency of the little battery piece after the cutting has been improved, the power of subassembly has been promoted from this.
Drawings
Preferred embodiments of the present invention will be described in detail below with reference to the accompanying drawings. In the drawings:
fig. 1a shows a single-crystal cell plate according to a preferred embodiment of the invention in a schematic top view;
fig. 1b shows a cut single-crystal cell piece according to a preferred embodiment of the invention in a schematic top view;
fig. 2 schematically shows a manufacturing process for manufacturing a photovoltaic module according to the present invention, wherein the cut cell sheet is a single crystal cell sheet according to a preferred embodiment of the present invention;
FIG. 3 shows a wafer rod as a starting material in a schematic perspective view;
FIG. 4 shows in schematic perspective view an squarer wafer holder for the wafer bar shown in FIG. 3;
FIG. 5 shows in a schematic perspective view a single-crystal silicon wafer obtained after squaring and slicing, the crystal orientation of the four edges of the single-crystal silicon wafer being <110 >;
fig. 6 shows in a schematic perspective view a single-crystal cell piece made from the single-crystal silicon wafer shown in fig. 5, the crystal orientation of the four edges of which is <110 >.
Detailed Description
In order to overcome the defects of the prior art, the inventor improves a single crystal cell sheet for preparing a photovoltaic module and the photovoltaic module.
A single crystal cell according to a preferred embodiment of the invention is schematically shown in fig. 1 a. The single crystal cell sheet is manufactured by the method shown in fig. 2, the front and back surfaces of the cell sheet are substantially square, the crystal orientation of four edges thereof is <110>, the front surface is formed with a pattern, and a plurality of prearranged cut lines 6 are provided on the front surface or the back surface in parallel with two edges thereof, for example, the left and right edges. A weakened portion, for example, a notch 7 is formed at one or both ends of a prearranged cut line 6, which is perpendicular to the upper and lower edges of the single crystal battery wafer. As shown in fig. 1a, the cut 7 has a length l, the cut 7 may here be a continuous score or a discontinuous score.
Fig. 1b schematically shows a single-crystal cell piece cut along the prearranged cut line 6. Due to the utilization of the structural characteristics of the crystalline silicon <110> crystal orientation natural crack, the single crystal cell sheet can be easily and neatly cracked along the prearranged cut line 6 only by the weakened portion, such as the cut 7, along a certain length of the prearranged cut line 6, so that the chips are greatly reduced, and the slicing efficiency is improved.
Fig. 2 shows a process for manufacturing a photovoltaic module, wherein the photovoltaic module is made of a single crystal cell according to the present invention.
In the raw material supply step S1, the wafer rod 1 of <100> crystal orientation is grown as a raw material, for example, by the czochralski method. As shown in fig. 3, the wafer rod 1 has a plurality of growth ridges 2 along its central axis direction.
As shown in fig. 4, the substantially cylindrical squarer wafer holder 3 has a plurality of wafer holder ridge lines 4 along its central axis direction. In the angle adjustment step S2, the growth ridge 2 of the wafer rod 1 is overlapped with the wafer support ridge 4 of the squarer wafer support 3 shown in fig. 4, and then the wafer rod 1 is rotated clockwise or counterclockwise by 45 degrees, so that the growth ridge 2 of the wafer rod 1 and the wafer support ridge 4 adjacent to the growth ridge of the squarer wafer support 3 are spaced apart by an angle of 45 degrees in the circumferential direction.
In the squaring and slicing step S3, the wafer bar 1 was subjected to squaring and grinding to obtain a square bar, and the square bar obtained after the squaring and grinding was sliced, so that the crystal orientation of the four edges of the single crystal silicon wafer obtained was <110 >.
In the step S4 of manufacturing a cell, the monocrystalline silicon wafer is subjected to surface texturing, cleaning, diffusion junction making, phosphorosilicate glass removal, antireflection film deposition and screen printing to manufacture a monocrystalline cell 5, which comprises the following specific steps:
the surface texturing is carried out on the monocrystalline silicon piece, so that the monocrystalline silicon piece can obtain a good textured structure, the specific surface area can be increased to receive more photons (energy), and the reflection of incident light is reduced;
the residual liquid during the texturing is cleaned, so that the influence of acidic and alkaline substances on the battery knot making is reduced;
phosphorus atoms are obtained by reacting phosphorus oxychloride with the monocrystalline silicon piece, and after a certain period of time, the phosphorus atoms enter the surface layer of the monocrystalline silicon piece and permeate and diffuse into the monocrystalline silicon piece through gaps among silicon atoms to form an interface of an N-type semiconductor and a P-type semiconductor, so that a diffusion and junction making process is completed, and the conversion from light energy to electric energy is realized;
because the diffusion junction is formed at the edge of the monocrystalline silicon piece, photo-generated electrons collected by the front surface of the PN junction can flow to the back surface of the PN junction along the region with phosphorus diffused at the edge to cause short circuit, and the PN junction at the edge is etched and removed through plasma etching, so that the short circuit caused by the edge is avoided;
because the diffusion and junction making process can form a layer of phosphorosilicate glass on the surface of the monocrystalline silicon piece, the influence on the efficiency of the laminated cell can be reduced through the phosphorosilicate glass removing process, and in addition, in order to reduce the damage of high temperature to diffusion and crystal lattices, the annealing process step can be added;
in order to reduce the surface reflection of the monocrystalline silicon wafer and improve the conversion efficiency of the cell, one or more layers of silicon nitride antireflection films are required to be deposited, and the antireflection film preparation can be completed through a chemical vapor deposition process such as PECVD (plasma enhanced chemical vapor deposition);
and screen printing a back electrode, a back electric field and a front grid line of the solar cell, and completing the manufacturing process of the single crystal cell piece through a sintering process to obtain the AlBSF cell piece.
Alternatively, in the cell making step S4, the monocrystalline silicon wafer may be made into other types of monocrystalline cells, for example, a PERC cell may be made through steps of texturing, diffusion, etching, back passivation, film coating, laser grooving, printing and sintering, or a TopCon cell may be made through steps of texturing, diffusion junction making, etching boron-removed silicate glass, tunnel junction preparation, ion implantation, annealing, cleaning, film coating, screen printing and sintering, or a heterojunction cell may be made through steps of texturing, amorphous silicon film lamination, transparent lamination conductive film, electrode printing and the like.
In the cell sheet cutting step S5, the single crystal cell sheet is cut by mechanical cutting or laser cutting to generate a weakened portion, such as an opening or a cut, at one end or both ends of the prearranged cut line 6, such as a cut 7 cut to a certain depth and length (as shown in fig. 1a, the cut 7 has a length l), where the cut 7 may be a continuous cut or a discontinuous cut, and then a mechanical stress is slightly applied, so that the single crystal cell sheet can be easily and neatly split along the prearranged cut line 6 (as shown in fig. 1 b) according to the structural characteristics of natural split of crystalline silicon <110> crystal orientation.
In the module preparation step S6, a photovoltaic module is composed of the cut small pieces of the cell sheets.
In fig. 5, a single crystal silicon wafer obtained after the slicing and the opening is schematically shown, and the crystal orientation of four edges of the single crystal silicon wafer is <110 >. In fig. 6, a single crystal cell is schematically shown, which is manufactured by the single crystal silicon wafer shown in fig. 4 through the processes of texturing, cleaning, diffusion junction making, phosphorosilicate glass removal, antireflection film deposition, screen printing and the like, and the crystal orientation of four edges of the single crystal cell is also <110 >.
The scope of protection of the present invention is limited only by the claims. Persons of ordinary skill in the art, having benefit of the teachings of the present invention, will readily appreciate that alternative structures to those disclosed as possible may be substituted for the embodiments disclosed, and that the disclosed embodiments may be combined to create new embodiments, or the invention may be applied to other similar fields, all of which fall within the scope of the appended claims.
Claims (6)
1. A monocrystalline cell piece (5), characterized in that the four edges of the monocrystalline cell piece have a crystal orientation <110> and a length of weakened portions at the edges perpendicular to the monocrystalline cell piece.
2. The single crystal cell sheet (5) according to claim 1, wherein the weakened portions are openings or cuts (7).
3. Single crystal cell sheet (5) according to claim 2, characterized in that the cut (7) is a continuous or segmented cut.
4. Single crystal cell sheet (5) according to any one of claims 1 to 3, characterized in that on another edge parallel to said edge there is another weakened portion opposite and in line with said weakened portion.
5. A photovoltaic module made of a single-crystal cell sheet according to any one of claims 1 to 4, wherein the single-crystal cell sheet is subjected to mechanical stress, and the single-crystal cell sheet is split into small pieces at the weakened portions along a weakened portion direction perpendicular to the edge, and the photovoltaic module is composed of a plurality of the small pieces.
6. The photovoltaic module of claim 5, wherein the photovoltaic module is a half-sheet photovoltaic module or a shingled photovoltaic module.
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| CN201821941596.5U CN212230440U (en) | 2018-11-23 | 2018-11-23 | Single crystal cell piece and photovoltaic module |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201821941596.5U CN212230440U (en) | 2018-11-23 | 2018-11-23 | Single crystal cell piece and photovoltaic module |
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| Date | Code | Title | Description |
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| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| EE01 | Entry into force of recordation of patent licensing contract |
Assignee: TONGWEI SOLAR ENERGY (HEFEI) Co.,Ltd. Assignor: CHENGDU YEFAN SCIENCE AND TECHNOLOGY Co.,Ltd. Contract record no.: X2023990000264 Denomination of utility model: Single crystal cell and photovoltaic module Granted publication date: 20201225 License type: Common License Record date: 20230221 |
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Effective date of registration: 20231207 Address after: 888 Changning Avenue, High tech Zone, Hefei City, Anhui Province Patentee after: TONGWEI SOLAR ENERGY (HEFEI) Co.,Ltd. Address before: No. 505, building 6, Zone D, Tianfu Software Park, No. 599, shijicheng South Road, high tech Zone, Chengdu, Sichuan 610041 Patentee before: CHENGDU YEFAN SCIENCE AND TECHNOLOGY Co.,Ltd. |
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