CN212206096U - Y-branch optical waveguide modulator chip - Google Patents
Y-branch optical waveguide modulator chip Download PDFInfo
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- CN212206096U CN212206096U CN202021135014.1U CN202021135014U CN212206096U CN 212206096 U CN212206096 U CN 212206096U CN 202021135014 U CN202021135014 U CN 202021135014U CN 212206096 U CN212206096 U CN 212206096U
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Abstract
The application relates to a Y-branch optical waveguide modulator chip which comprises a substrate wafer, a Y-branch optical waveguide, a first modulation electrode branch, a second modulation electrode branch and an isolation layer film; the crystal tangential direction of the substrate wafer is Z-cut, the Y-branch optical waveguide is arranged on the substrate wafer and comprises an incident optical waveguide, a Y-branch optical waveguide left arm and a Y-branch optical waveguide right arm which are connected with the incident optical waveguide, an isolation layer film and a modulation electrode branch I are sequentially arranged above the Y-branch optical waveguide left arm and the Y-branch optical waveguide right arm, and a modulation electrode branch II is arranged on one side of the modulation electrode branch I and forms a push-pull structure with the modulation electrode branch I.
Description
Technical Field
The application relates to the technical field of optical fiber gyroscopes, in particular to a Y-branch optical waveguide modulator chip.
Background
At present, the optical fiber gyroscope has been widely applied to an inertial navigation system due to its outstanding characteristics of high precision, all solid state, strong environmental adaptability, large dynamic range and the like. In recent years, with the continuous progress of the development technology of the optical fiber gyroscope and the continuous maturity of the manufacturing technology of each integrated photoelectric device, the optical fiber gyroscope is developing towards the direction of low cost and miniaturization, and the application of the optical fiber gyroscope in the civil fields of automobile unmanned driving, unmanned aerial vehicle navigation and the like is continuously widened.
As one of the core components of the optical fiber gyroscope, the Y-branch optical waveguide modulator has multiple important integrated optical functions such as wave guiding, polarization, beam splitting/combining, phase modulation, and the like. Meanwhile, as the largest one of all integrated photoelectric devices of the optical fiber gyroscope, the length of the Y-branch optical waveguide modulator is one of the important limiting factors for miniaturization of the optical fiber gyroscope. In order to reduce the size of the device, especially the length thereof, a commonly used solution at present is to shorten the length of the bent portion of the Y-branch waveguide. However, this solution is limited by some factors, and the shortening of the device length has a bottleneck that is difficult to break through.
First, shortening the length of the curved portion of the Y-branch waveguide results in an increase in the half-wave voltage of the device. The calculation formula of the half-wave voltage of the lithium niobate modulator is Vπ＝Gλ/(n3γ33L), where G is the electrode spacing, λ is the wavelength, n is the effective refractive index of the optical waveguide, γ33The electro-optic coefficient of lithium niobate crystal, L, the electrode length, and the modulation efficiency of the electric field to the optical field (i.e. electro-optic overlap integral). Since the electrodes of the Y-branch optical waveguide modulator are placed on the left and right sides of the optical waveguide, the length of the optical waveguide, particularly the length of the Y-branch waveguide, directly determines the length of the electrodes. Therefore, the shortening of the length of the Y-branch waveguide will result in an increase of the half-wave voltage of the modulator, exceeding the power supply capability of the optical fiber gyroscope system.
Next, in the prior art, in order to reduce the increase of the half-wave voltage of the modulator due to the shortening of the length of the Y-branch waveguide, a method of shortening the electrode distance G is often used. However, considering that the electrodes of the Y waveguide modulator are disposed on the left and right sides of the optical waveguide, if the electrode pitch is too small, the electrodes absorb energy of the optical waveguide, which increases the insertion loss of the device.
Therefore, the conventional method for realizing miniaturization of the Y waveguide modulator by shortening the length of the bent part of the Y-branch waveguide and shortening the electrode distance is often limited by the half-wave voltage of the modulator, so that the size of the conventional miniaturized Y waveguide modulator is difficult to break through the limit to realize further miniaturization.
SUMMERY OF THE UTILITY MODEL
In order to solve the technical problem that the size of the conventional Y waveguide modulator is difficult to realize further miniaturization due to the fact that the conventional method for shortening the length of the bent part of the Y-branch waveguide and shortening the electrode distance is limited by the half-wave voltage of the modulator or at least partially solve the technical problem, the application provides a Y-branch optical waveguide modulator chip, which can adopt a Z-cut lithium niobate wafer to manufacture the Y-branch optical waveguide modulator and is beneficial to realizing the miniaturization of the Y-branch optical waveguide modulator.
In a first aspect, the present application provides a Y-branch optical waveguide modulator chip comprising: the optical waveguide device comprises a substrate wafer, a Y-branch optical waveguide, a first modulation electrode branch, a second modulation electrode branch and an isolating layer film;
the crystal tangential direction of the substrate wafer is Z-shaped, the Y-branch optical waveguide is arranged on the substrate wafer and comprises an incident optical waveguide, and a Y-branch optical waveguide left arm and a Y-branch optical waveguide right arm which are connected with the incident optical waveguide, the isolation layer film and the modulation electrode branch I are sequentially arranged above the Y-branch optical waveguide left arm and the Y-branch optical waveguide right arm, and the modulation electrode branch II is arranged on one side of the modulation electrode branch I and forms a push-pull structure with the modulation electrode branch I.
Optionally, the substrate wafer comprises an optical-grade lithium niobate wafer or an optical-grade lithium tantalate wafer.
Optionally, the isolation layer film is a non-metal isolation film.
Optionally, the isolation layer film includes a silicon oxide film or an aluminum oxide film or a tantalum oxide film.
Optionally, the thickness of the isolation layer film is not less than 10nm and not more than 1000 nm.
Optionally, the divergence angle of the Y-branch optical waveguide is not greater than 5 °, and the opening distance between the left arm of the Y-branch optical waveguide and the right arm of the Y-branch optical waveguide is not less than 60 um.
According to the Y-branch optical waveguide modulator chip provided by the embodiment of the application, the substrate wafer with the Z-cut crystal tangential direction is adopted, and the isolation layer film and the modulation electrode branch I are sequentially arranged above the Y-branch optical waveguide; on the other hand, the power lines below the first modulation electrode branch and the second modulation electrode branch are distributed more densely, so that the modulation efficiency of the electric field to the optical field is higher, namely the electro-optical overlap integral is larger; therefore, in combination with the above two aspects, the Y-branch optical waveguide modulator chip provided in the embodiments of the present application has higher electric field modulation efficiency (i.e., electro-optical superposition integral) and smaller electrode spacing, and thus has a lower product of "half-wave voltage length", which can achieve further reduction of the length of the Y-branch optical waveguide modulation electrode and simultaneously avoid a large increase of the half-wave voltage, and is beneficial to further miniaturization of the Y-branch optical waveguide modulator.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the invention and together with the description, serve to explain the principles of the invention.
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious for those skilled in the art that other drawings can be obtained according to the drawings without inventive labor.
FIG. 1 is a schematic top view of a conventional Y-branch optical waveguide modulator chip;
FIG. 2 is a schematic cross-sectional view of a conventional Y-branch optical waveguide modulator chip;
fig. 3 is a schematic top view of a Y-branch optical waveguide modulator chip according to an embodiment of the present disclosure;
FIG. 4 is a schematic cross-sectional view of a Y-branch optical waveguide modulator chip according to an embodiment of the present disclosure;
FIG. 5 is a schematic cross-sectional view of a Y-branch optical waveguide modulator chip according to an embodiment of the present application;
FIG. 6 is a schematic diagram of another top view structure of a Y-branch optical waveguide modulator chip according to an embodiment of the present application;
FIG. 7 is a schematic cross-sectional view of a Y-branch optical waveguide modulator chip according to an embodiment of the present application;
fig. 8 is a schematic cross-sectional view of a Y-branch optical waveguide modulator chip according to an embodiment of the present application.
Icon:
1. a base wafer; 2. a Y-branch optical waveguide; 31. modulating the electrode branch I; 32. a modulation electrode branch II; 4. an isolation layer film; 200. an optical waveguide; 300. a first branch; 301. a second branch.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are some embodiments of the present application, but not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
At present, the optical fiber gyroscope has been widely applied to an inertial navigation system due to its outstanding characteristics of high precision, all solid state, strong environmental adaptability, large dynamic range and the like. In recent years, with the continuous progress of the development technology of the optical fiber gyroscope and the continuous maturity of the manufacturing technology of each integrated photoelectric device, the optical fiber gyroscope is developing towards the direction of low cost and miniaturization, and the application of the optical fiber gyroscope in the civil fields of automobile unmanned driving, unmanned aerial vehicle navigation and the like is continuously widened.
As one of the core components of the optical fiber gyroscope, the Y-branch optical waveguide modulator has multiple important integrated optical functions such as wave guiding, polarization, beam splitting/combining, phase modulation, and the like. Meanwhile, as the largest one of all integrated photoelectric devices of the optical fiber gyroscope, the length of the Y-branch optical waveguide modulator is one of the important limiting factors for miniaturization of the optical fiber gyroscope. In order to reduce the size of the device, especially the length thereof, a commonly used solution at present is to shorten the length of the bent portion of the Y-branch waveguide. However, this solution is limited by some factors, and the shortening of the device length has a bottleneck that is difficult to break through.
First, shortening the length of the curved portion of the Y-branch waveguide results in an increase in the half-wave voltage of the device. The calculation formula of the half-wave voltage of the lithium niobate modulator is Vπ＝Gλ/(n3γ33L), where G is the electrode spacing, λ is the wavelength, n is the effective refractive index of the optical waveguide, γ33The electro-optic coefficient of lithium niobate crystal, L, the electrode length, and the modulation efficiency of the electric field to the optical field (i.e. electro-optic overlap integral). Since the electrodes of the Y-branch optical waveguide modulator are placed on the left and right sides of the optical waveguide, the length of the optical waveguide, particularly the length of the Y-branch waveguide, directly determines the length of the electrodes. Therefore, the shortening of the length of the Y-branch waveguide will result in an increase of the half-wave voltage of the modulator, exceeding the power supply capability of the optical fiber gyroscope system.
Next, in the prior art, in order to reduce the increase of the half-wave voltage of the modulator due to the shortening of the length of the Y-branch waveguide, a method of shortening the electrode distance G is often used. However, considering that the electrodes of the Y-branch optical waveguide modulator are disposed on the left and right sides of the optical waveguide, when the electrode pitch is too small, the electrodes absorb energy of the optical waveguide, resulting in an increase in the insertion loss of the device.
Therefore, the conventional method for realizing miniaturization of the Y waveguide modulator by shortening the length of the bent part of the Y-branch waveguide and shortening the electrode spacing is often limited by the half-wave voltage of the modulator, so that the size of the conventional miniaturized Y waveguide modulator is difficult to break through the limit to realize further miniaturization.
For ease of understanding, the structure and composition of a Y-branch optical waveguide modulator chip, as is common in the art, in which the first and second branches 300 and 301 of the modulation electrode are located to the left and right above the optical waveguide 200, is first briefly described below, with reference to fig. 1-2. The calculation formula of the 'half-wave voltage length' product of the optical modulator is VπL＝Gλ/(n3γ33) Wherein G is the electrode spacing, λ is the wavelength, n is the effective refractive index of the optical waveguide, γ33The electro-optical coefficient of the lithium niobate crystal, L the length of the modulation electrode and the modulation efficiency of the electric field to the optical field (i.e. electro-optical superposition integral) show that the physical quantities on the right side of the formula are fixed values, VπThe product of L is also a fixed value, so that the shorter the length L of the modulation electrode the half-wave voltage VπThe larger. To reduce half-wave voltage V caused by shortening of the length L of the modulation electrodeπIncreasing, the schemes of reducing the electrode distance G or improving the electro-optical overlap integral are often adopted. In the prior art, the first branch 300 and the second branch 301 of the modulation electrode are located at the left side and the right side above the optical waveguide 200, and the too small electrode distance can cause the modulation electrode to absorb energy to the optical waveguide 200, so that the insertion loss of the device is increased. In the existing structure, because the optical waveguide 200 is located in the middle of the power line distribution EL of the modulation electrode, the improvement effect of the change of the electrode spacing on the electro-optical superposition integral is limited, so that it is difficult to reduce the half-wave voltage of the optical modulator by the scheme of improving the electro-optical superposition integral.
In view of the above-mentioned problems of the Y-branch optical waveguide modulator chip in the prior art, a detailed description is provided below for a Y-branch optical waveguide modulator chip provided in an embodiment of the present application, and referring to fig. 3 to 8, the Y-branch optical waveguide modulator chip includes: the optical waveguide device comprises a substrate wafer 1, a Y-branch optical waveguide 2, a first modulation electrode branch 31, a second modulation electrode branch 32 and an isolating layer film 4;
the crystal tangential direction of the substrate wafer 1 is Z-cut, the Y-branch optical waveguide 2 is arranged on the substrate wafer 1, the Y-branch optical waveguide 2 comprises an incident optical waveguide, and a Y-branch optical waveguide left arm and a Y-branch optical waveguide right arm which are connected with the incident optical waveguide, an isolation layer film 4 and a modulation electrode branch I31 are sequentially arranged above the Y-branch optical waveguide left arm and the Y-branch optical waveguide right arm, and a modulation electrode branch II 32 is arranged on one side of the modulation electrode branch I31 and forms a push-pull structure with the modulation electrode branch I31.
Here, in some embodiments of the present application, the substrate wafer 1 may include an optical-grade lithium niobate wafer or an optical-grade lithium tantalate wafer, with a thickness of 0.1mm to 2 mm. The thickness of the base wafer 11 is preferably 1 mm.
Here, in some embodiments of the present application, the Y-branch optical waveguide 2 may refer to an optical waveguide having a Y-branch structure, where an incident light waveguide of the Y-branch optical waveguide 2 is connected to a left arm of the Y-branch optical waveguide and a right arm of the Y-branch optical waveguide, respectively, to form a bifurcation, where, in some embodiments of the present application, a divergence angle of the Y-branch optical waveguide 2, where the divergence angle is represented as Φ, and Φ may be not greater than 5 °, where, as one preference, Φ may be 1 °; here, as an example, the opening pitch of the left arm of the Y-branch optical waveguide and the right arm of the Y-branch optical waveguide, where the opening pitch is denoted as D, may be not less than 60um, and as a preferable example, may be 400um, and here, as an example, the total length L of the Y-branch optical waveguide modulator chip may be not more than 30mm, and as a preferable example, may be 20 mm. Here, as another example, the Y-branch optical waveguide 2 may be manufactured by using a well-established titanium diffusion process or an annealed proton exchange process. Further, the Y-branch optical waveguide 2 is preferably prepared by an annealed proton-exchange process in view of the excellent polarization characteristics of the annealed proton-exchange optical waveguide.
Here, in some embodiments of the present application, the modulation electrode may include a first modulation electrode branch 31 and a second modulation electrode branch 32, the first modulation electrode branch 31 and the second modulation electrode branch 32 may be a metal thin film of cr/au or ti/au, where, as an example, the thickness of the cr thin film or the ti thin film may be 10nm to 100nm, which may function to improve adhesion between the base wafer 1 and the au thin film, where, as an example, the thickness of the au thin film may be 100nm to 1000nm, where, in some embodiments of the present application, the second modulation electrode branch 32 is disposed on one side of the first modulation electrode branch 31 and forms a push-pull structure with the first modulation electrode branch 31, where the first modulation electrode branch 31 is disposed above the left arm of the Y-branch optical waveguide and the right arm of the Y-branch optical waveguide, that is, the left arm of the Y-branch optical waveguide and the right arm of the Y-branch optical waveguide are both covered by the first modulation electrode branch 31, with a separator film 4 in between. The second modulation electrode branch 32 can be arranged at one side of the first modulation electrode branch 31; here, in some embodiments of the present application, the first modulation electrode branch 31 may be a split structure as shown in fig. 3 to 5, and the two split modulation electrode branches one 31 respectively cover the left arm of the Y-branch optical waveguide and the right arm of the Y-branch optical waveguide, in this case, the two split modulation electrode branches two 32 may also be a split structure, and the two split modulation electrode branches two 32 may be respectively disposed outside the two split modulation electrode branches one 31, that is, each of the two split modulation electrode branches two 32 is disposed away from the two split modulation electrode branches one 31, and forms a push-pull structure with the corresponding modulation electrode branch one 31; or may be disposed between two separated modulation electrode branches one 31, and form a push-pull structure with the corresponding modulation electrode branch one 31, which is not limited herein; here, in some embodiments of the present application, the first modulation electrode branch 31 may also be an integral structure as shown in fig. 6 to 8, the first modulation electrode branch 31 of the integral structure may completely cover above the left arm of the Y-branch optical waveguide and the right arm of the Y-branch optical waveguide, in this case, the second modulation electrode branch 32 may be a separate structure, and the two separate second modulation electrode branches 32 may be respectively disposed on two sides of the first modulation electrode branch 31 of the integral structure to form a push-pull structure with the first modulation electrode branch 31, which is not limited herein.
Here, in some embodiments of the present application, the isolation layer film 4 may be a non-metal isolation film.
Here, in some embodiments of the present application, the spacer film 4 includes a silicon oxide film or an aluminum oxide film or a tantalum oxide film.
In some embodiments of the present application, the thickness of the spacer film 4 is not less than 10nm and not more than 1000 nm.
Here, since the modulation electrode branch one 31 is directly disposed on the left arm and the right arm of the Y-branch optical waveguide 2, the modulation electrode branch one 31 is a metal film, and the modulation electrode branch one 31 of the metal film deposited on the left arm and the right arm of the Y-branch optical waveguide absorbs the light wave energy transmitted in the Y-branch optical waveguide 2, resulting in an increase in the insertion loss of the device, the isolation layer film 4 is interposed between the Y-branch optical waveguide 2 and the modulation electrode branch one 31 to isolate the Y-branch optical waveguide 2 from the modulation electrode branch one 31, thereby preventing the modulation electrode branch one 31 from absorbing the light wave energy and ensuring reliable transmission of the light wave energy, in some embodiments of the present application, the isolation layer film 4 may be integrally disposed on the upper surface of the substrate wafer 1 to integrally mount the modulation electrode branch one 31 on the upper surface of the substrate wafer 1 for reliably transmitting the light wave energy, The second modulation electrode branch 32 is totally isolated from the substrate wafer 1; or may be placed only between the substrate wafer 1 and the modulating electrode branch one 31. In some embodiments of the present application, in order to reduce the pyroelectric effect existing in the substrate wafer 1, the isolation layer film 4 may be disposed just above the left arm and the right arm of the Y-branch optical waveguide for isolating the first modulation electrode branch 31 from the left arm and the right arm of the Y-branch optical waveguide, and the second modulation electrode branch 32 is disposed directly on the upper surface of the substrate wafer 1.
The isolating layer film 4 can be made of any oxide material such as silicon oxide, aluminum oxide, tantalum oxide and the like, and the thickness is not less than 10 nm.
In some embodiments of the present application, the thickness of the spacer film 4 may be no greater than 1000nm, taking into account that the introduction of the spacer film 4 may create a partial voltage effect on the modulation voltage, resulting in an increase in the half-wave voltage of the Y-branch optical waveguide modulator.
According to the Y-branch optical waveguide modulator chip provided by the embodiment of the application, the substrate wafer 1 with the Z-cut crystal tangential direction is adopted, the isolation layer film 4 and the modulation electrode branch I31 are sequentially arranged above the Y-branch optical waveguide 2, on one hand, the isolation layer film 4 can effectively isolate the modulation electrode branch I31 from the Y-branch optical waveguide 2, so that the distance between the modulation electrode branch II 32 arranged on one side of the modulation electrode branch I31 and the modulation electrode branch I31 can be reduced to the minimum, and the energy absorption of the optical waveguide caused by the fact that the modulation electrode branch I31 or the modulation electrode branch II 32 presses the Y-branch optical waveguide 2 is avoided; on the other hand, the electric lines of force under the first modulation electrode branch 31 and the second modulation electrode branch 32 are distributed more densely, so that the modulation efficiency of the electric field to the optical field is higher, namely the electro-optical overlap integral is larger; therefore, in combination with the above two aspects, the Y-branch optical waveguide modulator chip provided in the embodiments of the present application has higher electric field modulation efficiency (i.e., electro-optical superposition integral) and smaller electrode spacing, and thus has a lower product of "half-wave voltage length", which can achieve further reduction of the length of the modulation electrode of the Y-branch optical waveguide 2 and simultaneously avoid a large increase of the half-wave voltage, and is beneficial to further miniaturization of the Y-branch optical waveguide modulator.
It is noted that, in this document, relational terms such as "first" and "second," and the like, may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
The above description is only exemplary of the invention, and is intended to enable those skilled in the art to understand and implement the invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (6)
1. A Y-branch optical waveguide modulator chip, comprising: the optical waveguide device comprises a substrate wafer, a Y-branch optical waveguide, a first modulation electrode branch, a second modulation electrode branch and an isolating layer film;
the crystal tangential direction of the substrate wafer is Z-shaped, the Y-branch optical waveguide is arranged on the substrate wafer and comprises an incident optical waveguide, and a Y-branch optical waveguide left arm and a Y-branch optical waveguide right arm which are connected with the incident optical waveguide, the isolation layer film and the modulation electrode branch I are sequentially arranged above the Y-branch optical waveguide left arm and the Y-branch optical waveguide right arm, and the modulation electrode branch II is arranged on one side of the modulation electrode branch I and forms a push-pull structure with the modulation electrode branch I.
2. The Y-branch optical waveguide modulator chip of claim 1, wherein the base wafer comprises an optical-grade lithium niobate wafer or an optical-grade lithium tantalate wafer.
3. The Y-branch optical waveguide modulator chip of claim 2, wherein the isolation layer film is a non-metallic isolation film.
4. The Y-branch optical waveguide modulator chip of claim 3, wherein the spacer film comprises a silicon oxide film or an aluminum oxide film or a tantalum oxide film.
5. The Y-branch optical waveguide modulator chip of claim 4, wherein the thickness of the spacer film is not less than 10nm and not more than 1000 nm.
6. The Y-branch optical waveguide modulator chip of any of claims 1 to 5, wherein the divergence angle of the Y-branch optical waveguide is not greater than 5 °, and the opening pitch of the left arm of the Y-branch optical waveguide and the right arm of the Y-branch optical waveguide is not less than 60 μm.
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| CN114706162A (en) * | 2022-03-31 | 2022-07-05 | 重庆电子工程职业学院 | Silicon light subset emitter chip |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114706162A (en) * | 2022-03-31 | 2022-07-05 | 重庆电子工程职业学院 | Silicon light subset emitter chip |
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