CN212182321U - Voltage-multiplying rectification module and voltage-multiplying rectification circuit adopting same - Google Patents
Voltage-multiplying rectification module and voltage-multiplying rectification circuit adopting same Download PDFInfo
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- CN212182321U CN212182321U CN202021358177.6U CN202021358177U CN212182321U CN 212182321 U CN212182321 U CN 212182321U CN 202021358177 U CN202021358177 U CN 202021358177U CN 212182321 U CN212182321 U CN 212182321U
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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Abstract
The utility model relates to a voltage doubling rectifier module, which belongs to the field of semiconductor electronic devices and is characterized in that the voltage doubling rectifier module comprises a plurality of bonding pads and at least two chip groups connected in series, each chip group is formed by connecting a first chip and a second chip in series, the first chip adopts a P-type substrate diode chip, and the second chip adopts an N-type substrate diode chip; the chip set is integrated in a packaging body with a plurality of pins, the first chip and the second chip are connected with the relevant pins of the packaging body through relevant bonding pads, the chip sets connected in series sequentially serve as an Nth chip set and an N +1 th chip set along the current direction, and the second chip in the Nth chip set and the first chip in the N +1 th chip set adopt the same bonding pad; the utility model discloses integrated N type substrate and P type substrate chip and an organic whole can realize from 3 times to the rectification of N times pressure, further realizes the flat encapsulation of module, and the product is miniaturized.
Description
Technical Field
The utility model relates to a semiconductor electron device technical field, concretely relates to voltage doubling rectifier module and adopt voltage doubling rectifier circuit of this module.
Background
In high-voltage circuit conversion of alternating current or direct current. Generally, low-voltage direct current (battery power supply mode) or alternating current is rectified and filtered to obtain direct current, the direct current is boosted by a high-voltage transformer through a self-excited oscillation circuit to be converted into high-frequency and high-voltage alternating current, and the high-voltage alternating current is rectified to output high-voltage direct current. However, this voltage is often far from the final use requirement, and it is necessary to continuously raise the voltage to change it into an extra-high voltage direct current, which also needs to perform voltage-doubling rectification, such as the voltage-doubling rectification circuit shown in fig. 1 to 5.
The existing voltage doubling rectifier circuit mode usually adopts more than 3 high-voltage rectifier diodes and N high-voltage capacitors, each adopted high-voltage diode usually consists of 2-3 chips, the high-voltage diode usually adopts an acid washing process, and a large amount of strong acid is adopted in the process, so that the pollution is serious.
With the development of integrated circuit production process, electronic products have higher and higher requirements on miniaturization, integration, reliability and environmental protection. In the prior art, a plurality of discrete devices are still adopted for voltage-doubling rectification, and the acid washing process is adopted as a key high-voltage diode, so that the requirement on environmental protection cannot be met. Therefore, the size and the cost of the circuit board cannot be well controlled, the competitiveness and the wide application of the whole product are influenced, the integration degree is not high, and the miniaturization of the circuit is influenced.
SUMMERY OF THE UTILITY MODEL
The utility model aims to solve the technical problem that to prior art not enough, provide a voltage doubling rectifier module of integrated N type substrate and P type substrate chip and adopt the voltage doubling rectifier circuit of this module, can realize from the 3 times rectification of pressing to N times, further realize the flat encapsulation of module, the product is miniaturized, convenient to use, simple to operate uses reliably, the sexual valence relative altitude.
The utility model provides an above-mentioned technical problem's technical scheme as follows: a voltage-multiplying rectifying module is characterized by comprising a plurality of bonding pads and at least two chip groups connected in series, wherein each chip group is formed by connecting a first chip and a second chip in series, the first chip adopts a P-type substrate diode chip, and the second chip adopts an N-type substrate diode chip; the chip set is integrated in a packaging body with a plurality of pins, the first chip and the second chip are connected with the related pins of the packaging body through related bonding pads, the chip sets connected in series sequentially serve as an Nth chip set and an N +1 th chip set along the current direction, and the second chip in the Nth chip set and the first chip in the N +1 th chip set adopt the same bonding pad.
Further, the first chip adopts glass passivation GPP chip, light resistance passivation chip, epitaxial plane diode chip, and electric common high voltage diode chip (V ZR> 1000V) or high-voltage switching diode chipT RR≤500ns）。
Furthermore, the first chip and the second chip in the same chip group are connected through the front surfaces thereof by adopting metal leads.
Furthermore, the metal lead wire is made of a silicon-aluminum wire, a thick aluminum wire, a gold wire or a copper wire.
Further, the number of the chip sets of the voltage-multiplying rectifying module is set to be 3, 4, 5 or 6, and when the voltage-multiplying rectifying module is provided with three chip sets, at least two chip sets are connected in series.
Furthermore, when the voltage-doubling rectifying module is provided with three chip sets, and two chip sets are connected in series, the other chip set is arranged in the packaging body independently of the two chip sets.
Further, the package body adopts a 4-pin, 7-pin or 16-pin package structure.
Furthermore, an effective output terminal is led out between adjacent chip groups.
Furthermore, the relevant bonding pad connected with the first chip or the second chip is connected with the relevant pin of the packaging body, and the pin is used as an effective output terminal of the voltage-multiplying rectifying module.
The voltage-multiplying rectification circuit is characterized in that the voltage-multiplying rectification module and the high-voltage capacitors are adopted, an effective output terminal of the voltage-multiplying rectification module and the high-voltage capacitors form an increasing loop, alternating voltage is increased step by step, and multi-voltage-multiplying rectification is achieved.
The utility model has the advantages that: the utility model discloses a form the chipset with P type substrate and N type substrate series connection combination, a plurality of above-mentioned chipsets are established ties and are formed the connecting circuit to draw forth the terminal between adjacent chipset, realize the many times of multichip combination and press rectification module, and then realize the many times of pressing rectification to high voltage circuit output; the flat type encapsulation of module has been realized through above-mentioned design, and the integrated level improves greatly, and the product is miniaturized, convenient to use, simple to operate uses reliably, the sexual valence relative altitude. The utility model discloses in being applied to AC/DC-DC high voltage conversion circuit with simple and reliable mode. The rectification from 3 times to N times of voltage can be realized according to different applications, for example, in circuits such as an electric mosquito swatter, an anion generator (air purification), an ozone generator (disinfection), a microwave oven and the like, and the rectification device has wide market value.
Drawings
FIG. 1 is a prior art voltage tripling rectifier circuit diagram;
FIG. 2 is a prior art voltage tripling rectifier circuit diagram;
FIG. 3 is a prior art quad-voltage rectifier circuit diagram;
FIG. 4 is a prior art five times voltage rectifier circuit diagram;
FIG. 5 is a prior art six-fold voltage rectifier circuit diagram;
fig. 6 is a schematic structural diagram of a triple pressure rectification module according to an embodiment of the present invention;
fig. 7 is a schematic diagram of an application circuit connection of a triple voltage rectification module according to an embodiment of the present invention;
fig. 8 is a schematic structural view of a triple pressure rectification module according to another embodiment of the present invention;
fig. 9 is a schematic diagram of an application circuit connection of a triple voltage rectification module according to another embodiment of the present invention;
fig. 10 is a schematic structural diagram of a quadruple-pressure rectification module according to an embodiment of the present invention;
fig. 11 is a schematic diagram of an application circuit connection of a quadruple voltage rectifier module according to an embodiment of the present invention;
fig. 12 is a schematic structural diagram of a quintuple rectifier module according to an embodiment of the present invention;
fig. 13 is a schematic diagram of an application circuit connection of a quintupling rectifier module according to an embodiment of the present invention;
fig. 14 is a schematic structural diagram of a six-fold pressure rectification module according to an embodiment of the present invention;
fig. 15 is a schematic diagram of an application circuit connection of a sixfold rectification module according to an embodiment of the present invention;
in the figure: 1. 3, 5, 7, 9, 11. first chip, 2, 4, 6, 8, 10, 12. second chip, 13, 14, 15, 16, 17, 18, 19. metal frame base island, 20. metal lead, 21. package.
Detailed Description
The principles and features of the present invention will be described with reference to the drawings, which are provided for illustration purposes only and are not intended to limit the scope of the present invention.
Example 1
As shown in fig. 6, in the present embodiment, a plurality of discrete high-voltage diodes are used in a voltage-doubling rectifying circuit for combination, and 6 high-voltage diode chips are divided into 3 chip groups, each group has 2 chips connected in series to form a three-voltage-doubling rectifying circuit, which is integrated in a package, and the package includes 4 copper frames (PAD) capable of soldering chips, and a plurality of metal leads; wherein, the 1 st chip and the 2 nd chip, the 3 rd chip and the 4 th chip, and the 5 th chip and the 6 th chip form a series structure, each group of chips in series consists of a diode chip with a P-type substrate and an N-type diode chip, and the chips are respectively welded on 4 bonding pad base islands; there are 4 output terminals to the outside.
Specifically, there are 6 diode chips, 3P-type substrate structure chips (1, 3, 5), and three N-type substrate chips (2, 4, 6) respectively soldered to 4 metal frame base islands (13, 14, 15, 16), where chip 1 and chip 2 are a chip group, chip 3 and chip 4 are a chip group, chip 5 and chip 5 are a chip group, and there are 4 base island PADs (PAD), where a second chip in the nth chip group and a first chip in the N +1 th chip group use the same PAD, that is, chip 4 and chip 5 share a PAD as in fig. 6, and chip 6 and chip 1 share a PAD; the front surfaces of the chips are connected by metal leads (20 # -3, 6), the lead process comprises ultrasonic bonding, gold wire ball bonding and laser welding, the materials are compatible with silicon aluminum wires, thick aluminum wires, gold wires and copper wires, 3 or 6 internal lead designs are provided for the module 1, and the module is sealed by epoxy resin in a plastic mode.
The packaging form adopts SOP4, a four-pin flat packaging structure, is applied to a 3-time voltage rectification circuit, is shown in figure 7, and is suitable for the principle application of a circuit diagram 1.
Example 2
As shown in fig. 8, in the present embodiment, a plurality of discrete high-voltage diodes are used in a voltage-doubling rectifying circuit for combination, and 6 high-voltage diode chips are divided into 3 chip groups, each group has 2 chips connected in series to form a three-voltage-doubling rectifying circuit, which is integrated in a package, and the package includes 5 copper frames (PADs) capable of soldering chips, and a plurality of metal leads; wherein, the 1 st chip and the 2 nd chip, the 3 rd chip and the 4 th chip form a series structure, the 5 th chip and the 6 th chip are connected in series and are arranged in the packaging body independently of the four chips, each group of chips connected in series consists of a diode chip with a P-type substrate and an N-type diode chip and is respectively welded on 5 bonding pad base islands; there are 5 effective output terminals to the outside.
Specifically, the package body is internally provided with 6 diode chips, 3P-type substrate structure chips (1, 3, 5), and three N-type substrate chips (2, 4, 6) which are respectively welded on 5 metal frame base islands (13, 14, 15, 16, 17), and have 5 base island PADs (PAD), wherein the second chip in the nth chip group and the first chip in the N +1 th chip group adopt the same PAD, namely the chip 4 and the chip 5 shown in fig. 8 are in common PAD; the front surfaces of the chips are connected by metal leads (20 # -3 or 6), the lead process is ultrasonic bonding, gold wire ball bonding and laser welding, the materials are compatible with silicon aluminum wires, thick aluminum wires, gold wires and copper wires, and 3 or 6 internal lead designs are provided for the module 2; the module adopts an epoxy resin plastic package 7-pin packaging structure, wherein 2 pins are empty pins, the number of the packaging pins is not limited to 7 pins, and other numbers of pins are allowed to be adopted according to the requirement. The present embodiment is applied to a 3-voltage-doubling rectifying circuit, see fig. 9, and is suitable for application of the principle of the circuit diagram 2.
Example 3
As shown in fig. 10, in the present embodiment, a plurality of discrete high-voltage diodes are used in a voltage-doubling rectifying circuit for combination, 8 high-voltage diode chips are divided into 4 chip groups, each group has 2 chips connected in series to form a four-voltage-doubling rectifying circuit, which is integrated in a package, and the package includes a copper frame (PAD) with 6 solderable chips and a plurality of metal leads; wherein, the 1 st chip and the 2 nd chip, the 3 rd chip and the 4 th chip, the 5 th chip and the 6 th chip, the 7 th chip and the 8 th chip form a series structure, each group of chips in series is composed of a diode chip with a P-type substrate and an N-type diode chip, and the chips are respectively welded on 5 pad base islands; there are 5 effective output terminals to the outside.
Specifically, 8 diode chips, 4P-type substrate structure chips (1, 3, 5, 7) and 4N-type substrate chips (2, 4, 6, 8) are arranged inside the packaging body; respectively welded on 5 metal frame base islands (13, 14, 16, 17, 18), and 6 base island PADs (PAD) are provided, wherein one of the base island PADs is empty, the second chip in the Nth chip group and the first chip in the (N + 1) th chip group adopt the same PAD, namely the chip 8 and the chip 5 are provided with a common PAD in fig. 10, the chip 6 and the chip 3 are provided with a common PAD, and the chip 4 and the chip 1 are provided with a common PAD; the front surfaces of the chips are connected by metal leads (20 # -4 or 8), the lead process is ultrasonic bonding, gold wire ball bonding and laser welding, the materials are compatible with silicon aluminum wires, thick aluminum wires, gold wires and copper wires, and the module 3 has 4 or 8 internal lead designs; the module adopts an epoxy resin plastic package 16-pin packaging structure, wherein 11 pins are empty pins, the number of the packaging pins is not limited to 16 pins, and other numbers of pins are allowed to be adopted according to the requirement. The present embodiment is applied to a 4-voltage-multiplying rectifier circuit, see fig. 11, and is suitable for application of the principle of the circuit diagram 3.
Example 4
As shown in fig. 12, in the present embodiment, a plurality of discrete high-voltage diodes are used in a voltage-doubling rectifying circuit for combination, 10 high-voltage diode chips are divided into 5 chip groups, each group has 2 chips connected in series to form a five-voltage-doubling rectifying circuit, which is integrated in a package, and the package includes a copper frame (PAD) with 6 solderable chips and a plurality of metal leads; wherein, the 1 st chip and the 2 nd chip, the 3 rd chip and the 4 th chip, the 5 th chip and the 6 th chip, the 7 th chip and the 8 th chip, the 9 th chip and the 10 th chip form a series structure, each group of chips in series is composed of a diode chip with a P-type substrate and an N-type diode chip, and the chips are respectively welded on 6 pad base islands; there are 6 effective output terminals to the outside.
Specifically, the package body is internally provided with 10 diode chips, 5P-type substrate structure chips (1, 3, 5, 7, 9) and 5N-type substrate chips (2, 4, 6, 8, 10); respectively welded on 6 metal frame base islands (13, 14, 15, 16, 17, 18), and 6 base island PADs (PADs) are provided, wherein the second chip in the Nth chip group and the first chip in the (N + 1) th chip group adopt the same PAD, namely the chip 10 and the chip 7 are common PAD, the chip 8 and the chip 5 are common PAD, the chip 6 and the chip 3 are common PAD, and the chip 4 and the chip 1 are common PAD; the front surfaces of the chips are connected by metal leads (20 # -5 or 10), the lead process is ultrasonic bonding, gold wire ball bonding and laser welding, the materials are compatible with silicon aluminum wires, thick aluminum wires, gold wires and copper wires, and the module 4 has 5 or 10 internal lead designs; the module adopts an epoxy resin plastic package 16-pin packaging structure, wherein 10 pins are empty pins, the number of the packaging pins is not limited to 16 pins, and other numbers of pins are allowed to be adopted according to the requirement. The present embodiment is applied to a 5-voltage-multiplying rectification circuit, see fig. 13, and is suitable for application of the principle of the circuit diagram 4.
Example 5
As shown in fig. 14, in the present embodiment, a plurality of discrete high-voltage diodes are used in a voltage-doubling rectifying circuit for combination, and 12 high-voltage diode chips are divided into 6 chip groups, each group has 2 chips connected in series to form a six-voltage-doubling rectifying circuit, and are integrated in a package, and the package includes a copper frame (PAD) with 6 solderable chips, and a plurality of metal leads; wherein, the 1 st chip and the 2 nd chip, the 3 rd chip and the 4 th chip, the 5 th chip and the 6 th chip, the 7 th chip and the 8 th chip, the 9 th chip and the 10 th chip, and the 11 th chip and the 12 th chip form a series structure, each group of series chips is composed of a diode chip with a P-type substrate and an N-type diode chip, and are respectively welded on 7 pad base islands; there are 7 effective output terminals to the outside.
Specifically, 12 diode chips, 6P-type substrate structure chips (1, 3, 5, 7, 9, 11), and 6N-type substrate chips (2, 4, 6, 8, 10, 12) are arranged inside the package; respectively welded on 7 metal frame base islands (13, 14, 15, 16, 17, 18, 19), and 7 base island PADs (PADs) are shared, wherein the second chip in the Nth chip group and the first chip in the (N + 1) th chip group adopt the same PAD, namely the chip 12 and the chip 9 shown in FIG. 14 are shared by PADs, the chip 10 and the chip 7 are shared by PADs, the chip 8 and the chip 5 are shared by PADs, the chip 6 and the chip 3 are shared by PADs, and the chip 4 and the chip 1 are shared by PADs; the front surfaces of the chips are connected by metal leads (20 # -6 or 12), the lead process is ultrasonic bonding, gold wire ball bonding and laser welding, the materials are compatible with silicon aluminum wires, thick aluminum wires, gold wires and copper wires, and the module 5 has 6 or 12 internal lead designs; the module adopts an epoxy resin plastic package 16-pin packaging structure, wherein 9 pins are empty pins, the number of the packaging pins is not limited to 16 pins, and other numbers of pins are allowed to be adopted according to the requirement. The present embodiment is applied to a 6-voltage-doubling rectifying circuit, see fig. 15, and is suitable for application of the principle of the circuit diagram 5.
In the above embodiment, the chips 1, 3, 5, 7, 9, and 11 integrated with all modules are diode chips made of P-type substrates, and the chips 2, 4, 6, 8, 10, and 12 integrated with all modules are diode chips made of N-type substrates;
each 2 diode chips in the module group form a voltage-multiplying rectifying unit, and each unit is formed by connecting a P-type substrate diode and an N-type substrate diode in series;
chip process and structure type: glass passivation GPP process, light resistance passivation process and epitaxial plane process; electrical common high voltage diode (V ZR> 1000V), high-voltage switching diode chip(s) (T RR≤500ns）。
The above embodiments provide various voltage-multiplying rectifying modules, and the package includes 4-pin, 7-pin and 16-pin packages to implement different voltage-multiplying rectifying modes, but the number of package pins and the number of series-parallel groups are not limited to the above embodiments. The flexibility of voltage-multiplying rectification is considered, and the flexibility of circuit use and the insulativity of the voltage-multiplying rectification circuit are ensured due to the design of the multiple base island bonding pads.
In the module circuit of the utility model, every two high voltage diode chips with different substrates form a unit group, and the breakdown voltage of each unit group diode can reach more than 4000V; the cell groups are designed to be connected in series in a forward direction (an independent cell group is designed in the triple voltage rectifying circuit of the embodiment 2 due to application requirements); lead-out terminals (pins) are designed between the unit groups, the pins and an external high-voltage capacitor form an incremental loop, the alternating voltage is gradually boosted, and the multi-fold rectification is realized.
The utility model discloses a many times of voltage rectification mode just can be constituteed to single module, for prior art, rectifier diode chip among the combined circuit has been built-in to the module group, and no longer discrete single device, the integrated level improves greatly under the condition that does not improve the cost, has better price/performance ratio, be particularly suitable for the electronic mosquito that has higher requirement to power supply plate volume and cost, in circuits such as anion generator (air purification), ozone generator (disinfection), microwave oven, extensive market value has.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples and features of different embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction.
Although embodiments of the present invention have been shown and described, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention, and that variations, modifications, substitutions and alterations can be made to the above embodiments by those of ordinary skill in the art without departing from the scope of the present invention.
Claims (10)
1. A voltage-multiplying rectifying module is characterized by comprising a plurality of bonding pads and at least two chip groups connected in series, wherein each chip group is formed by connecting a first chip and a second chip in series, the first chip adopts a P-type substrate diode chip, and the second chip adopts an N-type substrate diode chip; the chip set is integrated in a packaging body with a plurality of pins, the first chip and the second chip are connected with the related pins of the packaging body through related bonding pads, the chip sets connected in series sequentially serve as an Nth chip set and an N +1 th chip set along the current direction, and the second chip in the Nth chip set and the first chip in the N +1 th chip set adopt the same bonding pad.
2. The voltage doubler rectifier module of claim 1, wherein the first chip is a glass passivated GPP chip, a photoresist passivated chip, an epitaxial planar diode chip, an electrically common high voltage diode chip, or a high voltage switching diode chip.
3. The voltage-doubling rectifying module according to claim 1, wherein the first chip and the second chip in the same chip set are connected by metal leads on the front surface thereof.
4. The voltage-doubling rectifying module according to claim 3, wherein the metal lead is a silicon aluminum wire, a thick aluminum wire, a gold wire or a copper wire.
5. The voltage-doubling rectifier module according to claim 1, wherein the number of the chip sets of the voltage-doubling rectifier module is set to 3, 4, 5 or 6, and when three chip sets are provided, at least two chip sets are connected in series.
6. The voltage-doubler rectifier module according to claim 5, wherein when the voltage-doubler rectifier module has three chip sets and two of the chip sets are connected in series, another chip set is provided in the package independently of the two chip sets.
7. The voltage-doubling rectifying module according to claim 1, wherein the package is a 4-pin, 7-pin or 16-pin package structure.
8. The voltage-doubler rectifier module of claim 1, wherein an active output terminal is led out between adjacent chip groups.
9. The voltage doubler rectifier module of claim 1, wherein the associated pad associated with the first chip or the second chip is connected to an associated pin of the package, and the pin serves as an active output terminal of the voltage doubler rectifier module.
10. A voltage-doubling rectifying circuit, characterized in that, the voltage-doubling rectifying module and a plurality of high-voltage capacitors as claimed in any one of claims 1 to 9 are adopted, the effective output terminal of the voltage-doubling rectifying module and the high-voltage capacitors form an increasing loop, and the alternating voltage is gradually increased to realize multi-voltage-doubling rectification.
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| CN111710665A (en) * | 2020-07-13 | 2020-09-25 | 山东晶导微电子股份有限公司 | Voltage-multiplying rectification module and voltage-multiplying rectification circuit adopting same |
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| CN111710665A (en) * | 2020-07-13 | 2020-09-25 | 山东晶导微电子股份有限公司 | Voltage-multiplying rectification module and voltage-multiplying rectification circuit adopting same |
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