CN212060647U

CN212060647U - Optical fiber chip

Info

Publication number: CN212060647U
Application number: CN202020751642.6U
Authority: CN
Inventors: 邓群雄; 席庆男; 倪斌; 曹智; 王晓慧
Original assignee: Hefei Yuanxu Chuangsin Semiconductor Technology Co ltd; Shandong Novoshine Optoelectronics Co ltd
Current assignee: Yuanxu Semiconductor Technology Co ltd; Yuanxu Semiconductor Technology Tianjin Co ltd
Priority date: 2020-05-08
Filing date: 2020-05-08
Publication date: 2020-12-01
Anticipated expiration: 2030-05-08

Abstract

The utility model belongs to the technical field of laser shaping, and provides an optical fiber chip, which comprises a {100} crystal group substrate, wherein a V-shaped groove is arranged on the {100} crystal group substrate, and at least one optical fiber strip is arranged in the V-shaped groove; the {100} crystal group substrate is a (100) silicon wafer, the V-shaped groove is formed along the crystal direction of the silicon wafer <110>, the groove surface of the V-shaped groove is a {111} crystal surface of the silicon wafer, the optical fiber strip comprises a glass fiber core and an optical reflecting layer coated outside the glass fiber core, and the optical fiber strip is fixedly arranged in the V-shaped groove by glue. The utility model discloses an optical fiber chip, the optical fiber strip who installs through the V-arrangement mounting groove, because the total reflection of optical fiber strip and extremely low light decay for light propagation is difficult to be absorbed, and the beam energy is concentrated, and light need not consider the V-arrangement groove at the in-process of optical fiber strip conduction losses such as absorption of setting a camera to, and this optical fiber chip low cost is convenient for use in the encapsulation of semiconductor laser, is favorable to laser device's preparation, has the function of carrying out the plastic to laser device light beam.

Description

Optical fiber chip

Technical Field

The utility model relates to a laser plastic technical field especially relates to an optical fiber chip.

Background

The semiconductor laser has the advantages of small volume, light weight, high electro-optic conversion efficiency, long service life, high reliability and the like, and is widely applied to the fields of communication, medical treatment, display, industrial manufacture, security and the like. However, in the prior art, in the laser packaging, the light shape of the laser cannot be shaped, the light shape depends on the self light emitting area of the laser device, and due to the defects of poor light beam quality, uneven light intensity distribution, large divergence angle and the like, the development and the use of the semiconductor laser are hindered, and in order to meet the requirements of different applications, the laser beam is often shaped; the laser beam shaping technology generally refers to changing the intensity distribution of an incident laser beam into a required intensity distribution, and simultaneously adjusting the phase distribution and the divergence angle of the incident laser beam to control the propagation characteristics of the incident laser beam, so as to meet the requirements on the spot size, the divergence angle and even the light intensity distribution of the incident laser beam; the optical fiber has the characteristics of total reflection and extremely low light attenuation, and has the function of shaping the light beam of a laser device, but the precise and tiny-sized optical fiber is not easy to be packaged and used in a laser.

Therefore, an optical fiber chip with a laser device beam shaping function is developed, which not only has urgent research value, but also has good economic benefits and industrial application potential, which is the basis and the place where the utility model can complete the power.

SUMMERY OF THE UTILITY MODEL

In order to overcome the above-identified drawbacks of the prior art, the present inventors have conducted intensive studies and, after having paid a lot of creative efforts, have completed the present invention.

Particularly, the utility model discloses the technical problem that solve is: the optical fiber chip is provided to solve the technical problem that the precise and tiny optical fiber is not easy to be packaged in a laser to realize the beam shaping of a laser device.

In order to solve the technical problem, the technical scheme of the utility model is that:

an optical fiber chip comprises a {100} crystal group substrate, wherein a V-shaped groove is formed in the {100} crystal group substrate, and at least one optical fiber strip is arranged in the V-shaped groove.

As an improved technical scheme, the {100} crystal group substrate is a (100) silicon wafer, and the V-shaped grooves are formed along the <110> crystal direction of the silicon wafer.

As an improved technical scheme, the groove surface of the V-shaped groove is a {111} crystal plane of a silicon wafer, the included angle between the groove surface of the V-shaped groove and the {100} crystal plane of the silicon wafer is 54.74 degrees, and the included angle between the two groove surfaces of the V-shaped groove is 70.52 degrees.

As an improved technical scheme, the optical fiber strip comprises a glass fiber core and an optical reflecting layer coated outside the glass fiber core, and the optical fiber strip is fixedly installed in the V-shaped groove by glue.

The utility model discloses simultaneously above-mentioned fiber chip's manufacturing method, including following step:

s1, providing a {100} crystal group substrate, and preparing a protective layer on the (100) surface of the {100} crystal group substrate;

s2, covering a photoresist layer on the protective layer, and forming a plurality of exposed areas which are arranged along the <110> crystal direction and are uniformly arranged on the photoresist layer;

s3, etching the protective layer exposed by the exposed area, and then removing the patterned photoresist layer;

s4, carrying out anisotropic etching on the {100} crystal group substrate by using an alkaline solution, and etching to obtain the V-shaped groove;

s5, removing the protective layer by wet etching;

s6, injecting glue into the V-shaped groove, placing the optical fiber strips into the V-shaped groove, and then curing the glue;

and S7, grinding the bottom surface of the {100} crystal group substrate to a required thickness, and then slicing to prepare the single optical fiber chip.

As an improved technical scheme, the {100} crystal family substrate adopts a (100) silicon wafer;

the protective layer is a silicon nitride/silicon dioxide film which grows on the surface of the (100) silicon wafer by using PECVD (plasma enhanced chemical vapor deposition), or a silicon dioxide film which is prepared by oxidizing the surface of the (100) silicon wafer by using a dry method/wet method, or a metal film which grows on the surface of the (100) silicon wafer by using an evaporation/sputtering mode, wherein the metal film is any single-layer metal film or composite film of multiple layers of metals of nickel, titanium, platinum and gold.

As an improved technical scheme, a photoresist covering is performed on the protective layer by adopting a photoetching mode, then alignment exposure is performed on the covered photoresist layer along a <110> crystal direction, and the photoresist layer is patterned by continuing a developing process to obtain a plurality of exposure regions which are uniformly arranged.

As an improved technical scheme, the protective layer exposed by the exposed area is etched to the surface of the substrate by means of chemical wet etching or plasma dry etching, and then cleaning is carried out to clean the patterned photoresist layer.

As an improved technical scheme, the alkaline solution is one of a potassium hydroxide solution, a sodium hydroxide solution or a TMAH solution.

As an improved technical scheme, the glue is UV glue or thermosensitive glue, the optical fiber strips are fixed through curing glue, and slicing processing is carried out in a physical cutting mode of a diamond cutter.

After the technical scheme is adopted, the beneficial effects of the utility model are that:

the optical fiber chip is provided with the optical fiber strips arranged through the V-shaped mounting groove, light propagation is not easy to absorb due to total reflection of the optical fiber strips and extremely low light attenuation, light beam energy is concentrated, and loss such as absorption of light by the V-shaped grooves is not needed to be considered in the process of conducting light by the optical fiber strips.

According to the manufacturing method of the optical fiber chip, the V-shaped groove is prepared along the <110> crystal direction, the silicon wafer substrate is subjected to anisotropic corrosion by using an alkaline solution, only the middle part of the {111} surface of the substrate exposure area is corroded due to the special properties of the silicon wafer, and the corrosion is naturally stopped when the {111} surface is corroded, so that the corrosion is accurate, the preparation of the V-shaped groove for installing the optical fiber strip is simple and convenient, the depth of the prepared V-shaped groove is consistent, and the accurate and small-size optical fiber strip can be conveniently installed and fixed.

Drawings

In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the embodiments or the technical solutions in the prior art will be briefly described below. Throughout the drawings, like elements or portions are generally identified by like reference numerals. In the drawings, elements or portions are not necessarily drawn to scale.

FIG. 1 is a schematic structural view of structure I of the present invention;

FIG. 2 is a schematic structural view of structure II of the present invention;

fig. 3 is a schematic structural view of structure III of the present invention;

fig. 4 is a schematic structural view of a structure IV of the present invention;

fig. 5 is a schematic structural view of the structure V of the present invention;

FIG. 6 is a schematic view of the structure V of the present invention in partial section;

FIG. 7 is a schematic structural view of the optical fiber strip of the present invention in an un-placed state;

fig. 8 is a schematic structural view of structure VI of the present invention;

fig. 9 is a schematic structural diagram of the optical fiber chip of the present invention;

fig. 10 is a schematic view of a partial cross-sectional structure of an optical fiber chip according to the present invention;

FIG. 11 is a flow chart of a method for manufacturing an optical fiber chip according to the present invention;

reference numerals: 1- {100} family substrate; 101-a V-shaped groove; 2-optical fiber strip; 201-glass fiber core; 202-an optically reflective layer; 3-a protective layer; 4-a photoresist layer; 401 — exposed region.

Detailed Description

The invention will be further described with reference to specific examples. The use and purpose of these exemplary embodiments are to illustrate the invention, not to limit the scope of the invention in any way, and not to limit the scope of the invention in any way.

As shown in fig. 9 and fig. 10, the present embodiment provides an optical fiber chip, which includes a {100} group substrate 1, a V-shaped groove 101 disposed on the {100} group substrate 1, at least one optical fiber strip 2 disposed in the V-shaped groove 101, and one or more optical fiber strips 2 mounted on the optical fiber chip according to the requirement.

In the embodiment, a (100) silicon wafer is selected as the {100} crystal group substrate 1, and the V-shaped groove 101 is formed along the <110> crystal direction of the silicon wafer; of course, the substrate is not limited to a (100) silicon wafer, and a <100> silicon wafer for facilitating the formation of the V-shaped groove 101 may be selected.

In this embodiment, the groove surface of the V-shaped groove 101 is a {111} crystal plane of the silicon wafer, an angle α between the groove surface of the V-shaped groove 101 and the {100} crystal plane of the silicon wafer is 54.74 °, an angle β between both groove surfaces of the V-shaped groove 101 is 70.52 °, and the groove structure is a groove body structure of a specific specification obtained by alkaline solution etching.

In this embodiment, the optical fiber strip 2 includes a glass fiber core 201 and an optical reflection layer 202 covering the glass fiber core 201, the optical fiber strip 2 is fixedly mounted in the V-shaped groove 101 by glue, and in the process of optical fiber transmission, the loss of the V-shaped groove 101, such as light absorption, does not need to be considered.

In this embodiment, after the optical fiber strip 2 is mounted, it is ensured that the optical fiber strip 2 and the glue are not higher than the surface height of the substrate.

This fiber chip based on above-mentioned structure, through the fiber optic strip 2 that the V-arrangement mounting groove was installed, because the total reflection of fiber optic strip 2 and extremely low light decay for light propagation is difficult to be absorbed, and the beam energy is concentrated, and light need not consider the loss such as the absorption of V-arrangement groove 101 to the light at the in-process that fiber optic strip 2 conducts, this fiber chip low cost is convenient for encapsulate the use in semiconductor laser, is favorable to laser device's preparation, has the function of carrying out the plastic to laser device light beam.

As shown in fig. 11, this embodiment also discloses the method for manufacturing the optical fiber chip, which includes the following steps (in this embodiment, in the entire process for manufacturing the optical fiber chip structure, for convenience of description, the intermediate products or transition structures generated in each process step are respectively described as structure I, structure II, and structure iii.. structure VI, although other definition names may be adopted for description):

s1, providing a {100} crystal group substrate 1, and preparing a protective layer 3 on the (100) surface of the {100} crystal group substrate 1 to obtain a structure I, as shown in FIG. 1;

in this step, a (100) silicon wafer is used as the {100} group crystal substrate 1.

In the step, the prepared protective layer 3 can be prepared in various ways, the protective layer 3 is a silicon nitride/silicon dioxide film which grows on the surface of the (100) silicon wafer by using PECVD (plasma enhanced chemical vapor deposition), or a silicon dioxide film which is prepared by oxidizing the surface of the (100) silicon wafer by using a dry method/wet method, or a metal film which grows on the surface of the (100) silicon wafer by using an evaporation/sputtering method, and the metal film is any single-layer metal film or composite film of multiple layers of metals of nickel, titanium, platinum and gold.

The protective layer 3 prepared in the step plays a role in protection in the subsequent corrosion processing process, the thickness of the protective layer can be adjusted according to the corrosion depth, taking a deep groove with 100um corrosion as an example, the thickness of the silicon nitride film to be prepared is 280-320nm by taking the prepared silicon nitride film as the protective layer 3, the thickness of the silicon dioxide film to be prepared is 800-1200nm by taking the prepared silicon dioxide film as the protective layer 3, and the thickness of the metal film to be prepared is 180-220nm by taking the prepared metal film as the protective layer 3.

S2, covering a photoresist layer 4 on the protective layer 3, and forming a plurality of exposed regions 401 opened along the <110> crystal direction and uniformly arranged on the photoresist layer 4 to obtain a structure II, as shown in fig. 2;

in this step, a photoresist covering is performed on the protective layer 3 by using a photolithography method, then the covered photoresist layer 4 is aligned and exposed along the <110> crystal orientation, and the photoresist layer 4 is patterned by using photolithography processes such as development and the like to obtain a plurality of exposure regions 401 with required size (width) and arranged uniformly, wherein the exposure regions 401 are parallel to each other because each exposure region 401 is along the <110> crystal orientation of the silicon wafer.

S3, etching off the protective layer 3 exposed by the exposed region 401, and then removing the patterned photoresist layer 4 to obtain a structure III, as shown in FIG. 3;

in this step, the protective layer 3 exposed from the exposed region 401 is etched away by means of chemical wet etching or plasma dry etching, until reaching the substrate surface, to expose the silicon wafer surface to be etched, and then the patterned photoresist layer 4 is cleaned away by cleaning.

S4, carrying out anisotropic etching on the {100} crystal group substrate 1 by using an alkaline solution to obtain a V-shaped groove 101 by etching, and obtaining a structure IV as shown in FIG. 4;

in the step, the alkaline solution can be one of a potassium hydroxide solution, a sodium hydroxide solution or a TMAH solution, and due to the special properties of the silicon wafer, the alkaline solution only corrodes the middle part of the {111} plane of the silicon wafer, and the corrosion is naturally stopped after the {111} plane is corroded, so that the required V-shaped grooves 101 are obtained by the natural corrosion under the corrosion of the alkaline solution, and the depths of the V-shaped grooves 101 are consistent.

S5, after the V-shaped groove 101 is etched, removing the protective layer 3 by adopting a wet etching mode to obtain a structure V, as shown in fig. 5 and 6;

s6, injecting glue into the V-shaped groove 101, placing the optical fiber strip 2 into the V-shaped groove 101, then curing the glue, and realizing the installation and fixation of the optical fiber strip 2 in the V-shaped groove 101 through glue curing to obtain a structure VI, as shown in FIG. 7 and FIG. 8;

in the step, the glue is UV glue or heat-sensitive glue, so that the optical fiber strips 2 can be conveniently and quickly cured and fixed.

S7, the bottom surface of the {100} group crystal substrate 1 is polished to a desired thickness, and then sliced to prepare a single optical fiber chip, as shown in fig. 9 and 10.

In the step, silicon wafer grinding equipment is adopted to grind and polish the bottom surface of a silicon wafer substrate, the silicon wafer with the optical fiber strips 2 is ground to the required thickness, and finally, a physical cutting mode of a diamond cutter is adopted to carry out slicing processing to prepare a single optical fiber chip for use in laser packaging.

According to the manufacturing method of the optical fiber chip, the V-shaped groove 101 is prepared along the <110> crystal direction, due to anisotropic corrosion of alkaline solution on a silicon wafer substrate, only the middle part of the {111} surface of the substrate exposure area 401 is corroded, the corrosion is naturally stopped when the {111} surface is corroded, and the corrosion is accurate, so that the preparation of the V-shaped groove 101 for installing the optical fiber strip 2 is simple and convenient, the prepared V-shaped groove 101 is consistent in depth, and the accurate and small-size optical fiber strip 2 can be conveniently installed and fixed.

It should be understood that these examples are for illustrative purposes only and are not intended to limit the scope of the present invention. Furthermore, it should be understood that various changes, modifications and/or alterations to the present invention may be made by those skilled in the art after reading the technical disclosure of the present invention, and all such equivalents may fall within the scope of the present invention as defined by the appended claims.

Claims

1. An optical fiber chip, characterized in that: the optical fiber comprises a {100} crystal family substrate, wherein a V-shaped groove is formed in the {100} crystal family substrate, and at least one optical fiber strip is arranged in the V-shaped groove.

2. The fiber optic chip of claim 1, wherein: the {100} crystal group substrate is a (100) silicon wafer, and the V-shaped groove is formed along the <110> crystal direction of the silicon wafer.

3. The fiber optic chip of claim 2, wherein: the groove surface of the V-shaped groove is a crystal plane of a silicon wafer {111}, the included angle between the groove surface of the V-shaped groove and the crystal plane of the silicon wafer {100} is 54.74 degrees, and the included angle between the two groove surfaces is 70.52 degrees.

4. The fiber optic chip of any of claims 1-3, wherein: the optical fiber strip comprises a glass fiber core and an optical reflecting layer coated outside the glass fiber core, and the optical fiber strip is fixedly arranged in the V-shaped groove by glue.