CN212033207U - Novel power divider suitable for 5G - Google Patents
Novel power divider suitable for 5G Download PDFInfo
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- CN212033207U CN212033207U CN202021195851.3U CN202021195851U CN212033207U CN 212033207 U CN212033207 U CN 212033207U CN 202021195851 U CN202021195851 U CN 202021195851U CN 212033207 U CN212033207 U CN 212033207U
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Abstract
The utility model discloses a novel power divider suitable for a 5G power divider, which comprises an input port, a first output port, a second output port and a substrate; an input transmission line, a first output transmission line and a second output transmission line which are connected to the same connection point are arranged on one surface of the substrate; impedance transformation from the first output port to the connection point is secondary circuit board impedance transformation transition, impedance transformation from the connection point to the first output port is primary circuit board impedance transformation transition, and impedance transformation from the connection point to the first output port is primary circuit board impedance transformation transition; the first output transmission line and the second output transmission line extend from the connection point in opposite directions; the microstrip power dividing signal layer is provided with copper plating layers in side edge areas close to the first output port and the second output port. The utility model provides a novel ware is divided to merit obtains the high electrical property of keeping apart, low insertion loss, in-band fluctuation little, index stability, the reliability is high under the 2G-5G frequency channel.
Description
Technical Field
The utility model relates to an antenna parts technical field specifically relates to a novel ware is divided to merit that ware is applicable to 5G is divided to merit.
Background
The existing power divider is mainly adapted to 2G-4G frequency bands, and when the social development puts forward the requirement of 5G signal coverage, the existing power divider has the problems of insertion loss improvement and isolation reduction on the premise of using the 2G-5G frequency bands.
Therefore, a power divider with lower insertion loss and higher isolation degree under the use scene of the 2G-5G frequency band is needed.
SUMMERY OF THE UTILITY MODEL
In order to overcome the above disadvantages of the prior art, the present invention provides a novel power divider suitable for 5G, which aims to solve the problem of the existing power divider that the insertion loss is increased and the isolation is reduced on the premise of using 2G-5G frequency band.
The utility model provides a technical scheme that its technical problem adopted is:
a novel power divider is suitable for a 5G power divider and comprises an input port, a first output port, a second output port and a substrate;
the substrate is provided with a micro-strip power dividing signal layer which is used for dividing one path of signal into at least two paths of signals on one surface, and the micro-strip power dividing signal layer is provided with an input transmission line, a first output transmission line and a second output transmission line which are connected to the same connection point;
the input transmission line is electrically connected with the input port;
the first output transmission line is electrically connected with the first output port;
the second output transmission line is electrically connected with the second output port;
the impedance transformation from the first output port to the connection point is the second-level circuit board impedance transformation transition, the impedance transformation from the connection point to the first output port is the first-level circuit board impedance transformation transition, and the impedance transformation from the connection point to the first output port is the first-level circuit board impedance transformation transition;
the first output port and the second output port are axially symmetrically distributed along the extension axis of the connection point to the input transmission line, and the first output transmission line and the second output transmission line extend in opposite directions from the connection point; and the microstrip power division signal layer is provided with copper plating layers in side edge areas close to the first output port and the second output port.
As a modified solution, the input transmission line, the first output transmission line and the second output transmission line are disposed on the microstrip power dividing signal layer.
As a modified scheme, the substrate is rectangular, and a plurality of fixing through holes which are centrosymmetric according to the central point of the substrate are arranged near the side edge which is perpendicular to the copper plating layer.
As a modified scheme, the input transmission line, the first output transmission line, the second output transmission line, the connecting point, the copper plating layer and the fixing through hole are located in a rectangular area with the length of 20-50mm and the width of 15-40mm in the microstrip power division signal layer.
As an improvement, the dielectric constant of the substrate is between 1.1 and 6.0.
Compared with the prior art, the beneficial effects of the utility model are that:
1) the novel power divider provided by the utility model is suitable for a 5G power divider, and adopts three-level impedance transformation transition from an input port to an output port, wherein a first output port and a second output port are in axisymmetric distribution along the extension axis of the connection point to the input transmission line, and the first output transmission line and the second output transmission line are in reverse extension from the connection point; the power divider has the advantages of high isolation, low insertion loss, small in-band fluctuation, stable index and high reliability under the frequency band of 2G-5G.
2) The substrate of the utility model is rectangular, a plurality of through holes for fixing which are centrosymmetric according to the central point of the substrate are arranged near the side edge which is mutually vertical to the copper plating layer, the input transmission line, the first output transmission line, the second output transmission line, the connecting point, the copper plating layer and the through holes for fixing are positioned in a length of 20-50mm in the microstrip power dividing signal layer, and the width is in a rectangular area of 15-40 mm; the power divider has compact structure and wide adaptability, and is favorable for being matched with various antennas with 2-5G frequency bands.
Drawings
Fig. 1 is the schematic diagram of the front layout of the substrate of the power divider suitable for 5G of the present invention.
Fig. 2 is a schematic diagram of a layout of a back surface of a substrate of the power divider of the present invention, wherein the power divider is suitable for 5G.
Wherein, 1: an input port; 2: an input transmission line; 3: a first output port; 4: a first output transmission line; 5: a second output port; 6: a second output transmission line; 7: a connection point; 8: copper plating; 9: a through hole for fixing.
Detailed Description
The invention will now be further described with reference to the accompanying drawings, in which:
the first embodiment is as follows:
as shown in fig. 1 and 2, a novel power divider is suitable for a 5G power divider, and includes an input port 1, a first output port 3, a second output port 5, and a substrate;
the substrate is rectangular, and a plurality of fixing through holes 9 are formed near the side perpendicular to the copper plating layer 8 and are centrosymmetric with respect to the center of the substrate. The dielectric permittivity of the substrate is between 1.1 and 6.0.
The front surface of the substrate is provided with a micro-strip power dividing signal layer for dividing one path of signal into at least two paths of signals, and the micro-strip power dividing signal layer is provided with an input transmission line 2, a first output transmission line 4 and a second output transmission line 6 which are connected to the same connecting point 7 by using a circuit board corrosion technology; the input transmission line 2 is electrically connected with the input port 1; the first output transmission line 4 is electrically connected with the first output port 3; the second output transmission line 6 is electrically connected with the second output port 5; impedance transformation from the first output port 3 to the connection point 7 is secondary circuit board impedance transformation, impedance transformation from the connection point 7 to the first output port 3 is primary circuit board impedance transformation, and impedance transformation from the connection point 7 to the first output port 3 is primary circuit board impedance transformation; the first output port 3 and the second output port 5 are axially symmetrically distributed along the extension axis of the connection point 7 to the input transmission line 2, and the first output transmission line 4 and the second output transmission line 6 extend in opposite directions from the connection point 7; the microstrip power division signal layer is provided with a copper plating layer 8 at the side edge area close to the first output port 3 and the second output port 5. The input transmission line 2, the first output transmission line 4, the second output transmission line 6, the connection point 7, the copper plating layer 8 and the fixing through hole 9 are positioned in a rectangular area with the length of 20-50mm and the width of 15-40mm in the microstrip power division signal layer.
In conclusion, after the ordinary skilled in the art reads the document of the present invention, according to the present invention, the technical solution and technical concept of the present invention do not need creative mental labor to make other various corresponding transformation schemes, which all belong to the protection scope of the present invention.
Claims (5)
1. A novel power divider is suitable for a 5G power divider and is characterized by comprising an input port, a first output port, a second output port and a substrate;
the substrate is provided with a micro-strip power dividing signal layer which is used for dividing one path of signal into at least two paths of signals on one surface, and the micro-strip power dividing signal layer is provided with an input transmission line, a first output transmission line and a second output transmission line which are connected to the same connection point;
the input transmission line is electrically connected with the input port;
the first output transmission line is electrically connected with the first output port;
the second output transmission line is electrically connected with the second output port;
the impedance transformation from the first output port to the connection point is the second-level circuit board impedance transformation transition, the impedance transformation from the connection point to the first output port is the first-level circuit board impedance transformation transition, and the impedance transformation from the connection point to the first output port is the first-level circuit board impedance transformation transition;
the first output port and the second output port are axially symmetrically distributed along the extension axis of the connection point to the input transmission line, and the first output transmission line and the second output transmission line extend in opposite directions from the connection point; and the microstrip power division signal layer is provided with copper plating layers in side edge areas close to the first output port and the second output port.
2. The novel power divider of claim 1, wherein the input transmission line, the first output transmission line, and the second output transmission line are disposed on the microstrip power division signal layer using etched wiring board technology.
3. The novel power divider as claimed in claim 2, wherein the substrate is rectangular, and a plurality of through holes for fixing are formed in the vicinity of the side perpendicular to the copper plating layer, the through holes being formed in a manner of being symmetrical with respect to the center of the substrate.
4. The novel power divider of claim 3, wherein the input transmission line, the first output transmission line, the second output transmission line, the connection point, the copper plating layer and the fixing through hole are located in a rectangular area with a length of 20-50mm and a width of 15-40mm in the microstrip power dividing signal layer.
5. The novel power divider as claimed in claim 1, wherein the substrate has a dielectric constant of 1.1-6.0.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202021195851.3U CN212033207U (en) | 2020-06-24 | 2020-06-24 | Novel power divider suitable for 5G |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202021195851.3U CN212033207U (en) | 2020-06-24 | 2020-06-24 | Novel power divider suitable for 5G |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN212033207U true CN212033207U (en) | 2020-11-27 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202021195851.3U Active CN212033207U (en) | 2020-06-24 | 2020-06-24 | Novel power divider suitable for 5G |
Country Status (1)
| Country | Link |
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| CN (1) | CN212033207U (en) |
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2020
- 2020-06-24 CN CN202021195851.3U patent/CN212033207U/en active Active
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