CN211989984U - Silicon wafer cleaning device - Google Patents
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Abstract
本申请提供了一种硅片清洗装置,包括用以进行硅片清洗的清洗槽、若干储液箱、连接所述储液箱与清洗槽的输液管,若干所述储液箱分别用以存储不同的清洗药剂,至少部分所述储液箱内设置有搅拌器,且连接不同所述储液箱的输液管相互独立设置;所述硅片清洗装置还包括设置在所述输液管上的液泵、控制阀与流量计。本申请硅片清洗装置能够对金刚线切割后的硅片进行有效清洗,提升硅片清洗制程的稳定性,降低脏污片比例,且能减少清洗药剂的浪费,实现生产精益化;还能减少现场人员工作量,降低安全隐患。
The application provides a silicon wafer cleaning device, comprising a cleaning tank for cleaning silicon wafers, a plurality of liquid storage tanks, and an infusion pipe connecting the liquid storage tank and the cleaning tank, and the liquid storage tanks are respectively used for storage For different cleaning agents, at least part of the liquid storage tank is provided with a stirrer, and the infusion pipes connected to the different liquid storage tanks are arranged independently of each other; the silicon wafer cleaning device also includes a liquid disposed on the infusion pipe. Pumps, control valves and flow meters. The silicon wafer cleaning device of the present application can effectively clean the silicon wafers after diamond wire cutting, improve the stability of the silicon wafer cleaning process, reduce the proportion of dirty wafers, reduce the waste of cleaning agents, and achieve lean production; On-site personnel workload, reducing safety hazards.
Description
技术领域technical field
本申请涉及光伏生产设备领域,特别涉及一种硅片清洗装置。The present application relates to the field of photovoltaic production equipment, in particular to a silicon wafer cleaning device.
背景技术Background technique
晶体硅太阳能电池现阶段仍占据光伏市场的重要地位,硅片的加工质量会直接影响后续电池片及光伏组件的转换效率。目前,采用金刚线切割后的硅片表面会残存大量的硅粉、有机物、金属离子等杂质,若在清洗环节处理不干净,将对后续电池片制程造成很大的负面影响,导致电池片的转换效率大幅降低。因此,硅片的清洗对晶体硅太阳能电池性能显得尤为重要。Crystalline silicon solar cells still occupy an important position in the photovoltaic market at this stage, and the processing quality of silicon wafers will directly affect the conversion efficiency of subsequent cells and photovoltaic modules. At present, a large amount of silicon powder, organic matter, metal ions and other impurities will remain on the surface of silicon wafers cut by diamond wire. The conversion efficiency is greatly reduced. Therefore, the cleaning of silicon wafers is particularly important for the performance of crystalline silicon solar cells.
现有硅片清洗工艺主要包括预清洗、药剂清洗、漂洗、烘干等步骤,其中,药剂清洗是决定硅片清洗效果的最关键步骤。具体地,药剂清洗需要采用硅片专用清洗剂、双氧水、氢氧化钾等化学药剂,上述化学药剂的添加需要分段进行,即需根据硅片的清洗数量进行补液。The existing silicon wafer cleaning process mainly includes steps such as pre-cleaning, chemical cleaning, rinsing, drying, etc. Among them, chemical cleaning is the most critical step that determines the cleaning effect of the silicon wafer. Specifically, chemical cleaning agents such as special cleaning agents for silicon wafers, hydrogen peroxide, potassium hydroxide, etc. are used for chemical cleaning. The addition of the above chemical agents needs to be carried out in stages, that is, liquid replenishment needs to be carried out according to the cleaning quantity of silicon wafers.
很多厂家目前仍直接采用手动模式进行上述化学药剂的添加,药剂的添加量和添加时间难以精确控制,影响清洗效果,还容易发生药剂喷溅,存有安全隐患。更重要地,手动添加模式相对间隔时间较长,药剂浓度随着硅片清洗数量的增加而逐步降低,导致硅片清洗效果变化较大,即容易出现部分硅片表面杂质残留较多,影响后续电池片的质量稳定。业内亦公开有采用自动补液进行硅片清洗的技术方案,但其结构设计仍亟需进一步改善。At present, many manufacturers still directly use the manual mode to add the above chemicals. It is difficult to precisely control the amount and time of addition of the chemicals, which affects the cleaning effect, and is prone to splashing of the chemicals, posing a potential safety hazard. More importantly, the manual addition mode has a relatively long interval, and the concentration of the agent gradually decreases with the increase of the number of silicon wafers to be cleaned, resulting in a large change in the cleaning effect of the silicon wafers, that is, it is easy to have more impurities on the surface of some silicon wafers, which affects the follow-up. The quality of the cells is stable. The industry has also disclosed a technical solution for cleaning silicon wafers by using automatic liquid replenishment, but its structural design still needs to be further improved.
实用新型内容Utility model content
本申请的目的在于提供一种硅片清洗装置,能够对金刚线切割后的硅片进行有效清洗,提升清洗质量,减少清洗药剂的浪费,并降低安全隐患。The purpose of the present application is to provide a silicon wafer cleaning device, which can effectively clean the silicon wafers after diamond wire cutting, improve the cleaning quality, reduce the waste of cleaning agents, and reduce potential safety hazards.
为实现上述目的,本申请提供了一种硅片清洗装置,包括用以进行硅片清洗的清洗槽、若干储液箱、连接所述储液箱与清洗槽的输液管,若干所述储液箱分别用以存储不同的清洗药剂,至少部分所述储液箱内设置有搅拌器,且连接不同所述储液箱的输液管相互独立设置;所述硅片清洗装置还包括设置在所述输液管上的液泵、控制阀与流量计。In order to achieve the above purpose, the present application provides a silicon wafer cleaning device, which includes a cleaning tank for cleaning silicon wafers, a plurality of liquid storage tanks, an infusion pipe connecting the liquid storage tank and the cleaning tank, and a plurality of the liquid storage tanks. The tanks are respectively used to store different cleaning agents, at least part of the liquid storage tanks are provided with agitators, and the infusion pipes connected to the different liquid storage tanks are arranged independently of each other; the silicon wafer cleaning device also includes Liquid pumps, control valves and flow meters on infusion lines.
作为本申请的进一步改进,所述储液箱内还设有连接在所述输液管末端的过滤器。As a further improvement of the present application, the liquid storage tank is also provided with a filter connected to the end of the infusion tube.
作为本申请的进一步改进,所述输液管的内径设置为5~10mm。As a further improvement of the present application, the inner diameter of the infusion tube is set to be 5-10 mm.
作为本申请的进一步改进,所述储液箱的容积设置为250~300L,且所述储液箱设有液位检测机构。As a further improvement of the present application, the volume of the liquid storage tank is set to 250-300 L, and the liquid storage tank is provided with a liquid level detection mechanism.
作为本申请的进一步改进,所述储液箱远离所述输液管的一侧设有注液口。As a further improvement of the present application, a liquid injection port is provided on the side of the liquid storage tank away from the infusion tube.
作为本申请的进一步改进,所述清洗槽具有底壁与周壁,所述清洗槽内设置有贴近所述底壁和/或周壁的超声组件、邻近所述底壁设置的鼓泡组件。As a further improvement of the present application, the cleaning tank has a bottom wall and a peripheral wall, and the cleaning tank is provided with an ultrasonic component close to the bottom wall and/or the peripheral wall, and a bubbling component located adjacent to the bottom wall.
作为本申请的进一步改进,所述鼓泡组件包括沿所述底壁的边缘延伸设置的鼓泡管,所述鼓泡管的内径设置为5~10mm。As a further improvement of the present application, the bubbling assembly includes a bubbling tube extending along the edge of the bottom wall, and the inner diameter of the bubbling tube is set to be 5-10 mm.
作为本申请的进一步改进,所述硅片清洗装置包括至少两个相互独立的清洗槽。As a further improvement of the present application, the silicon wafer cleaning device includes at least two mutually independent cleaning tanks.
作为本申请的进一步改进,所述输液管包括连接至所述储液箱的主管路、连接所述主管路与清洗槽的分管路,所述液泵设置在所述主管路上,且每一所述分管路均设有相应的所述控制阀与流量计。As a further improvement of the present application, the infusion pipe includes a main pipeline connected to the liquid storage tank and a branch pipeline connected to the main pipeline and the cleaning tank, the liquid pump is arranged on the main pipeline, and each The branch pipelines are all provided with the corresponding control valves and flow meters.
作为本申请的进一步改进,所述硅片清洗装置还包括控制系统,所述控制系统用以编辑并保存清洗程序,并根据所述清洗程序控制硅片清洗。As a further improvement of the present application, the silicon wafer cleaning device further includes a control system, the control system is used to edit and save the cleaning program, and control the cleaning of the silicon wafer according to the cleaning program.
本申请的有益效果是:本申请硅片清洗装置通过若干储液箱分别实现不同清洗药剂的自动添加,并通过所述搅拌器对相应储液箱内的清洗药剂进行搅拌,保证药液均匀性。采用上述硅片清洗装置能够对金刚线切割后的硅片进行有效清洗,提升硅片清洗质量,降低脏污片比例,且能减少清洗药剂的浪费;还能减少现场人员工作量,降低安全隐患。The beneficial effects of the present application are: the silicon wafer cleaning device of the present application realizes the automatic addition of different cleaning agents through several liquid storage tanks, and stirs the cleaning agents in the corresponding liquid storage tanks through the agitator to ensure the uniformity of the liquid medicine . Using the above silicon wafer cleaning device can effectively clean the silicon wafer after diamond wire cutting, improve the cleaning quality of the silicon wafer, reduce the proportion of dirty wafers, and reduce the waste of cleaning agents; it can also reduce the workload of on-site personnel and reduce safety hazards. .
附图说明Description of drawings
图1是本申请硅片清洗装置一较佳实施例的部分结构示意图;FIG. 1 is a partial structural schematic diagram of a preferred embodiment of the silicon wafer cleaning device of the present application;
图2是本申请硅片清洗装置另一较佳实施例的部分结构示意图。FIG. 2 is a partial structural schematic diagram of another preferred embodiment of the silicon wafer cleaning apparatus of the present application.
100-硅片清洗装置;1-清洗槽;11-底壁;12-周壁;13-超声组件;14-鼓泡组件;2-储液箱;21-搅拌器;210-搅拌电机;21-箱底;23-箱盖;24-侧壁;25-过滤器;26-注液口;3-输液管;31-液泵;32-控制阀;33-流量计;301-主管路;302-分管路。100-wafer cleaning device; 1-cleaning tank; 11-bottom wall; 12-peripheral wall; 13-ultrasonic assembly; 14-bubbling assembly; 2-liquid storage tank; 21-stirrer; 210-stirring motor; 21- Bottom of box; 23-box cover; 24-side wall; 25-filter; 26-liquid injection port; 3-infusion pipe; 31-liquid pump; 32-control valve; 33-flow meter; 301-main pipeline; 302- branch pipeline.
具体实施方式Detailed ways
以下将结合附图所示的实施方式对本申请进行详细描述。但该实施方式并不限制本申请,本领域的普通技术人员根据该实施方式所做出的结构、方法、或功能上的变换均包含在本申请的保护范围内。The present application will be described in detail below with reference to the embodiments shown in the accompanying drawings. However, this embodiment does not limit the present application, and the structural, method, or functional transformations made by those of ordinary skill in the art according to this embodiment are all included in the protection scope of the present application.
参图1所示,本申请提供的硅片清洗装置100用以对金刚线切割后的硅片进行清洗,包括清洗槽1、若干储液箱2、连接所述储液箱2与清洗槽1的输液管3。Referring to FIG. 1 , the silicon
若干所述储液箱2分别用以存储不同的清洗药剂,且连接不同所述储液箱2的输液管3相互独立设置。换言之,各清洗药剂通过独立的管路添加至所述清洗槽1内,不会在输液管3内发生混合,有利于精确控制各种清洗药剂的添加量;同时也避免不同清洗药剂预先混合,可用于某些不适合提前混合的药剂添加。就硅片清洗过程而言,所需清洗药剂通常包括双氧水、KOH溶液及清洗剂,因而所述储液箱2可设置为三个以分别存放上述双氧水、KOH溶液及清洗剂。其中,所述清洗剂中可能引入某些组分,不适于在强碱溶液中长期稳定存在,若将双氧水、KOH溶液与清洗剂提前混合,可能导致硅片清洗效果变差,并增加上述各清洗药剂的耗量。A plurality of the
至少部分所述储液箱2内设置有搅拌器21,所述搅拌器21可根据各清洗药剂的特性进行配置,通过所述搅拌器21在相应的储液箱2内进行不定期间歇搅拌,避免清洗药剂出现分层、结晶,也使得所述清洗药剂在储液箱2内能够保持较好的均一性。At least part of the
所述储液箱2包括箱底22、箱盖23、连接所述箱底22与箱盖23的侧壁24,所述搅拌器21具有设置在箱盖23上的搅拌电机210。所述输液管3连接在所述侧壁24邻近所述箱底22的位置且与所述箱底22间隔设置,所述储液箱2内还设有连接在所述输液管3末端的过滤器25,以避免所述储液箱2内块状、颗粒状杂质进入输液管3。The
所述储液箱2远离所述输液管3的一侧还设有注液口26,也就是说,所述注液口26相对设置在所述输液管3的另一侧,以使得相应的清洗药剂添加后可与所述储液箱2内剩余药液混匀后,再经所述输液管3输送至清洗槽1。在此,所述注液口26设置在所述箱盖23上,所述注液口26可以连接外部供液系统,或人工将相应的清洗药剂自所述注液口26加入储液箱2内。The
所述储液箱2的容积设置为250~300L,且所述储液箱设有液位检测机构及低液位报警机构。所述储液箱2可采用透明塑料材质制得,以便于现场的液位观测,还可在所述储液箱2的侧壁22上设置容积刻度。特别地,针对光照条件下易分解的清洗药剂,则需采用非透明的材料制备相应的储液箱2。除此,所述储液箱2的底部还可设置排液管(未图示),以便于所述储液箱2的清洗。The volume of the
所述输液管3采用耐腐蚀的塑料管材制得,且所述输液管3的内径设置为5~10mm。所述硅片清洗装置100还包括控制系统及设置在所述输液管3上的液泵31、控制阀32、流量计,所述控制系统用以编辑并保存清洗程序,并根据所述清洗程序控制硅片清洗,所述液泵31、控制阀32、流量计33均连接至所述控制系统并根据控制系统发出的指令进行工作。所述液泵31的流量可根据生产需求进行调节,且其流量调整范围一般不超过10L/min。The
其中,所述清洗程序包括如下信息:硅片类型;各所述储液箱2中清洗药剂的初始添加量;各清洗药剂的动态补充量;换液周期等。当然,所述控制系统可存储多套清洗程序,以便于现场操作。Wherein, the cleaning procedure includes the following information: silicon wafer type; initial addition amount of cleaning agents in each of the
如将KOH溶液的初始添加量设置为500mL,并在每完成1万片硅片清洗时,补充20mL的KOH溶液,即动态补充量为20mL/万片;将清洗剂的初始添加量设置为7000mL,其动态补充量设置为250mL/万片;换液周期设置为8万片。优选地,首次配槽时,可以先在所述清洗槽1内加入一半容量左右的去离子水,然后再添加各种清洗药剂。For example, the initial addition amount of KOH solution is set to 500mL, and 20mL of KOH solution is replenished every time 10,000 wafers are cleaned, that is, the dynamic replenishment amount is 20mL/10,000 wafers; the initial addition amount of cleaning agent is set to 7000mL , the dynamic replenishment volume is set to 250mL/10,000 tablets; the liquid change cycle is set to 80,000 tablets. Preferably, when the tank is prepared for the first time, deionized water with about half capacity can be added into the
所述清洗槽1可采用不锈钢或聚乙烯等耐腐蚀材质制得,所述清洗槽1具有底壁11与周壁12。所述清洗槽1内设置有贴近所述底壁11和/或周壁12的超声组件13、邻近所述底壁11设置的鼓泡组件14。所述鼓泡组件14具体包括沿所述底壁11的边缘延伸设置的鼓泡管,所述鼓泡管内径设置为5~10mm,且所述鼓泡管上开设有若干小孔,通过外部通入的压缩空气可将所述清洗槽1内的清洗溶液混合均匀。The
参图2所示,在本申请另一实施方式中,所述硅片清洗装置100包括至少两个相互独立的清洗槽1,以提高清洗效率。所述输液管3包括连接至所述储液箱2的主管路301、连接所述主管路301与各清洗槽1的分管路302,所述液泵31设置在所述主管路301上,且每一所述分管路302均设有相应的所述控制阀32与流量计33,以根据所述控制系统的指令控制相应清洗槽1内清洗药剂的添加与补充。需要说明的是,此处为便于图示,仅示出其中一个所述储液箱2及连接至该储液箱2的输液管3。As shown in FIG. 2 , in another embodiment of the present application, the silicon
综上所述,本申请硅片清洗装置100可实现不同清洗药剂的自动添加,避免不同清洗药剂提前混合,并通过所述搅拌器21对相应储液箱2内的清洗药剂进行搅拌,保证药液均匀性。所述硅片清洗装置100能够对金刚线切割后的硅片进行有效清洗,提升硅片清洗质量,降低脏污片比例,且能减少清洗药剂的浪费;还能减少现场人员工作量,降低安全隐患。To sum up, the silicon
应当理解,虽然本说明书按照实施方式加以描述,但并非每个实施方式仅包含一个独立的技术方案,说明书的这种叙述方式仅仅是为清楚起见,本领域技术人员应当将说明书作为一个整体,各实施方式中的技术方案也可以经适当组合,形成本领域技术人员可以理解的其他实施方式。It should be understood that although this specification is described in terms of embodiments, not every embodiment only includes an independent technical solution, and this description in the specification is only for the sake of clarity, and those skilled in the art should take the specification as a whole, and each The technical solutions in the embodiments can also be appropriately combined to form other embodiments that can be understood by those skilled in the art.
上文所列出的一系列的详细说明仅仅是针对本申请的可行性实施方式的具体说明,它们并非用以限制本申请的保护范围,凡未脱离本申请技艺精神所作的等效实施方式或变更均应包含在本申请的保护范围之内。The series of detailed descriptions listed above are only specific descriptions for the feasible embodiments of the present application, and they are not intended to limit the protection scope of the present application. Changes should be included within the scope of protection of this application.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115042090A (en) * | 2022-06-15 | 2022-09-13 | 哈尔滨秋冠光电科技有限公司 | Method for self-cleaning wafer by polishing machine |
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2020
- 2020-03-31 CN CN202020440495.0U patent/CN211989984U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115042090A (en) * | 2022-06-15 | 2022-09-13 | 哈尔滨秋冠光电科技有限公司 | Method for self-cleaning wafer by polishing machine |
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| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: No. 199, deer mountain road, Suzhou high tech Zone, Jiangsu Province Patentee after: CSI CELLS Co.,Ltd. Patentee after: ARTES PHOTOVOLTAIC POWER (LUOYANG) Co.,Ltd. Patentee after: Atlas sunshine Power Group Co.,Ltd. Address before: No. 199, deer mountain road, Suzhou high tech Zone, Jiangsu Province Patentee before: CSI Cells Co.,Ltd. Patentee before: ARTES PHOTOVOLTAIC POWER (LUOYANG) Co.,Ltd. Patentee before: CSI SOLAR POWER GROUP Co.,Ltd. |
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| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20201124 |
