CN2119723U - Driver for protecting semiconductor switch - Google Patents

Driver for protecting semiconductor switch Download PDF

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Publication number
CN2119723U
CN2119723U CN 92201189 CN92201189U CN2119723U CN 2119723 U CN2119723 U CN 2119723U CN 92201189 CN92201189 CN 92201189 CN 92201189 U CN92201189 U CN 92201189U CN 2119723 U CN2119723 U CN 2119723U
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CN
China
Prior art keywords
circuit
output
driver
connects
semiconductor switch
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Granted
Application number
CN 92201189
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Chinese (zh)
Inventor
陈为匡
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Individual
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Individual
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Priority to CN 92201189 priority Critical patent/CN2119723U/en
Publication of CN2119723U publication Critical patent/CN2119723U/en
Granted legal-status Critical Current

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  • Inverter Devices (AREA)
  • Power Conversion In General (AREA)
  • Electronic Switches (AREA)

Abstract

The utility model provides a driver for protecting semiconductor switches (IGBT, MOS, CTR, MCT, SIT, GTO), which is composed of comparison circuits 5, 6, a monostable trigger circuit 7, a turn-on circuit 10, a turn-off circuit 11, a slow turn-off circuit 12, a time-delay circuit 14, a time-delay turn-off circuit 18, etc. The utility model has the advantages of low cost and can recognize overcurrent and short circuit current of different values in various conditions without the current sensor, repress turn-off counter pressure reliably and output the overflowing and short-circuit signal to realize the protection in various mode, making full use of and protecting the semiconductor switch.

Description

Driver for protecting semiconductor switch
The present invention relates to protect unsteady flow semiconductor switch 1(in the current transformer (as the current transformer of control motor) such as GTR, GTO, MOS, IGBT, MCT) driver that do not damaged by the overcurrent overvoltage.
Semiconductor switch is fragile when overcurrent-overvoltage or short circuit." external electric automatization " 91 years 5 phases of magazine " resist technology of IGBT module in the inverter loop " literary composition; address the on-state voltage drop identification overcurrent of the product E XB of Japanese fuji company series driver, turn-off overcurrent with slow breaking circuit and protect IGBT by monitoring IGBT.This product can not be discerned overcurrent when opening signal and can not turn-off overcurrent slowly in the narrow pulsewidth of input, and it can not identify is overcurrent or short circuit current and protection in different ways.It exists protection dead band and defencive function defective.
The present invention will release can be by the driver of monitoring semiconductor switch on-state voltage drop identification overcurrent when the narrow pulsewidth of input is opened signal; The driver of overcurrent can be under any circumstance turn-offed in release slowly; Release can identify the driver of different value overcurrent by the monitoring on-state voltage drop.
The product driver 2 that the present invention releases mainly is made of semiconductor element and passive component, is connected with switching circuit 3 between the input of driver 2 and output.
In the category-A driver 2 of the present invention: include the comparison circuit 5 that connects an end (as collector electrode) of semiconductor switch 1 by diode 4 or resistance, in switching circuit 3, be connected with the single-shot trigger trigger 7 that constitutes by positive feedback loop, timing loop.Single-shot trigger trigger 7 triggers just output by the determined pulsewidth of timing loop through burst pulse; driver 2 is produced when narrow pulsewidth is opened the signal input set pulsewidth output; ensure that comparison circuit 5 can be at this moment by monitoring the on-state voltage drop identification overcurrent of semiconductor switch 1, to realize the reliably protecting to semiconductor switch 1.
In the category-B driver 2 of the present invention: include by diode 4 or resistance and connect an end (as collector electrode) of semiconductor switch 1 or the comparison circuit 9 of connection current detector 8, the output of switching circuit 3 partly constitutes by opening circuit 10, breaking circuit 11, slow breaking circuit 12, comparison circuit 9 connects or opens circuit 10 by the element connection, and the output of comparison circuit 9 connects breaking circuits 11 by element 13.During overcurrent: comparison circuit 9 output signals are turn-offed and are opened circuit 10, constitute shutoff output slowly by slow breaking circuit 12, and comparison circuit 9 output signals are connected shutoff output by element 13 preventions or delay breaking circuit 11 and do not destroyed shutoff slowly and export.In all cases (as import that narrow pulsewidth is opened signal or when being about to cut-off signals occur) and overcurrent or short circuit appear, it can both make semiconductor switch 1 turn-off slowly and not damaged by overcurrent-overvoltage.Can be connected with single-shot trigger trigger 7 in the switching circuit 3 of this driver 2, make it have the advantage of category-A driver 2.
In the C quasi-driver 2 of the present invention: include the comparison circuit 5 and 6 that connects an end (as collector electrode) of semiconductor switch 1 by diode 4 or resistance, switching voltage in the switching circuit 3 connects the input of delay circuit 14, delay circuit 14 connects or connects comparison circuit 5 or 5 and 6 by semiconductor switch 15, comparison circuit 5 and 6 is discerned the different value overcurrent by the on-state voltage drop of monitoring semiconductor switch 1 respectively, control after a period of time when short circuit current, delay circuit 14 are opened signal time delay in switching circuit 3 outputs or monitor or output signal through semiconductor switch 15 control comparison circuits 5 or 5 and 6.Comparison circuit 5 can be connected same output element 16(such as optocoupler 17 with 6 output), in the output of same road, export different value overcurrent, short circuit current respectively with the different value signal.The output of comparison circuit 6 can connect comparison circuit 5 by time delayed turn-off circuit 18.The output of comparison circuit 6 can connect or connect switching circuit 3 by element.Comparison circuit 6 output overcurrent signals turn-off comparison circuit 5 or its output through time delayed turn-off circuit 18; the overcurrent signal of comparison circuit 6 outputs makes switching circuit 3 turn-off semiconductor switch 1 and realizes protection; during high value overcurrent (to call short circuit current in the following text), comparison circuit 5 is discerned short circuit current, output short-circuit signal during being delayed time by time delayed turn-off circuit 18.Comparison circuit 5 or 6 output can connect delay circuit 19, can ensure the minimum pulse width of output signal.Can be connected with single-shot trigger trigger 7 in the switching circuit 3 of this driver 2, make it have the advantage of category-A driver 2.The output of the switching circuit 3 of this driver 2 partly can constitute by opening circuit 10, breaking circuit 11, slow breaking circuit 12, comparison circuit 5 or 6 connects or opens circuit 10 by the element connection, comparison circuit 5 or 6 output connect breaking circuits 11 by element 13, make it have the advantage of category-B driver 2.
Delay circuit among the present invention can be made of resistance and semiconductor element (as transistor 20,21 or 69), with time of delay of semiconductor element be delay time, make time-delay reliably be easy to integrated manufacturing.The element of indication and circuit all are semiconductor element, passive component or are made up of it among the present invention, can both make integrated circuit.Progressively illustrate below in conjunction with product example.
Fig. 1,2,3 is respectively the product block diagram of A of the present invention, B, C quasi-driver 2, and Fig. 4,5,6 is respectively a kind of embodiment product circuit figure of A of the present invention, B, C quasi-driver 2.
In the category-A driver 2 of Fig. 1: comparison circuit 5 connects semiconductor switch 1 collector electrode through diode 4, is connected with single-shot trigger trigger 7 in the switching circuit 3 between driver 2 inputs and the output.
In the category-B driver 2 of Fig. 2: the input of comparison circuit 9 connects semiconductor switch 1 collector electrode or connects current detector 8 through the F line through E line, diode 4, the output of switching circuit 3 partly constitutes by opening circuit 10, breaking circuit 11, slow breaking circuit 12, the output of comparison circuit 9 connects opens circuit 10, and the output of comparison circuit 9 connects breaking circuit 11 by element 13.
In the C quasi-driver 2 of Fig. 3: comparison circuit 5 is connected semiconductor switch 1 collector electrode with 6 by diode 4, and the switching voltage in the switching circuit 3 connects the input of delay circuit 14, and delay circuit 14 connects comparison circuit 5 or 5 and 6, but the G line is a selection wire.
In the driver 2 of Fig. 4: be connected with the single-shot trigger trigger 7 that is made of resistance 25~28,47, electric capacity 38, transistor 40,41 in the switching circuit 3 that is made of resistance 22~32, electric capacity 38, transistor 39~44, it is timing loop that resistance 47 constitutes positive feedback loops, resistance 27 and electric capacity 38; The comparison circuit 5 that is made of resistance 48~51, transistor 52,53, diode 54 is connected semiconductor switch 1(IGBT with the comparison circuit 6 that is made of resistance 55~57, transistor 58, diode 59 through diode 4) collector electrode, the delay circuit 14 that is made of transistor 20,21, diode 60, resistance 61~66 connects comparison circuit 5 and switching circuit 3, and the output of comparison circuit 5 connects the delay circuit 19 that is made of resistance 67,68, transistor 69 through delay circuit 14.Import that narrow pulsewidth is opened signal and when being short-circuited, comparison circuit 5 is no-output during being set by single-shot trigger trigger 7, delay circuit 14,19 is through optocoupler 17 output short circuit current signals.
In the driver 2 of Fig. 5: breaking circuit 11 of opening circuit 10, being made of resistance 32~35, transistor 44~46 that is made of resistance 28,29, transistor 41,42 and the output that constitutes switching circuit 3 by the slow breaking circuit 12 that resistance 70~72, transistor 73 constitute are partly, the comparison circuit 9 that is made of resistance 48~50, transistor 52,53, diode 75 connects semiconductor switch 1(MOS through diode 4) drain electrode, comparison circuit 9 connects through transistor 74 opens circuit 10, and comparison circuit 9 is through element 13(resistance 30, transistor 43) connection breaking circuit 11.During short circuit current, comparison circuit 9 can not be connected breaking circuit 11 through element 13 and is turn-offed output, and circuit 10 is opened in guarantee, slow breaking circuit 12 turn-offs MOS slowly, and the cut-off signals of input this moment can not destroy slowly and turn-off.
In the driver 2 of Fig. 6: the comparison circuit 5 that is made of resistance 48~51, transistor 52,98, diode 75~77 is connected semiconductor switch 1(IGBT with the comparison circuit 6 that is made of resistance 55~57,78, transistor 58,79, diode 80~82 through diode 4) collector electrode; The delay circuit 14 that is made of resistance 83~86, transistor 87, electric capacity 88 is through semiconductor switch 15(transistor 89) connect the input of comparison circuit 5 and 6, the switching voltage in the switching circuit 3 that is made of resistance 26~35,70~72, transistor 40~46, diode 91,92 connects the input of delay circuits 14 through diode 90; The time delayed turn-off circuit 18 that the output of comparison circuit 6 constitutes via transistor 87,89, electric capacity 88 connects the input of comparison circuit 5; Comparison circuit 5 is connected optocoupler 17 through resistance 94,95 respectively with 6 output, connects by what resistance 28,29, transistor 41,42 constituted through transistor 96 again and opens circuit 10; The output of comparison circuit 5 is again delay circuit 19(resistance 97, transistor 99,43 by element 13) connect the breaking circuit 11 that constitutes by resistance 32~35, transistor 44~46; Be connected with the single-shot trigger trigger 7 that is made of resistance 31,47, electric capacity 38, transistor 43,40, diode 92 in the switching circuit 3, resistance 47, electric capacity 38 are feedback and timing loop.Delay circuit 14 is delayed time when opening signal through optocoupler 93 input switching circuits 3 and is made after a period of time transistor 89 connect comparison circuits 5 and 6; During overcurrent, comparison circuit 6 turn-offs comparison circuits 5 through time delayed turn-off circuit 18, through optocoupler 17 with low current output overcurrent signal, through transistor 96 with open circuit 10 and make the slow breaking circuit 12 that constitutes by resistance 70~72, transistor 73 turn-off IGBT slowly; During short circuit current, comparison circuit 5 is discerned short circuit current between the time delay of time delayed turn-off circuit 18, through optocoupler 17 with high electric current output short-circuit signal, time delayed turn-off output when element 13 makes breaking circuit 11 in the input cut-off signals ensures and turn-offs IGBT slowly and guarantee that short-circuit signal output has enough pulsewidths.Connect transistor 36 through the H line and can constitute the zero voltage switch driver.

Claims (9)

1, can protect the driver 2 of semiconductor switch; mainly constitute by semiconductor element and passive component; be connected with switching circuit 3 between its input and the output; include the comparison circuit 5 that connects an end (as collector electrode) of semiconductor switch 1 by diode 4 or resistance in the driver 2, it is characterized in that: in switching circuit 3, be connected with the single-shot trigger trigger 7 that constitutes by positive feedback loop, timing loop.
2; can protect the driver 2 of semiconductor switch; mainly constitute by semiconductor element and passive component; be connected with switching circuit 3 between its input and the output; include in the driver by diode 4 or resistance and connect an end (as collector electrode) of semiconductor switch 1 or the comparison circuit 9 of connection current detector 8; the output of switching circuit 3 is partly by opening circuit 10; breaking circuit 11; slow breaking circuit 12 constitutes; comparison circuit 9 connects or opens circuit 10 by the element connection; it is characterized in that: the output of comparison circuit 9 connects breaking circuit 11 by element 13, and comparison circuit 9 output signals are turn-offed output by element 13 preventions or 11 connections of delay breaking circuit and do not destroyed shutoff slowly and export.
3; can protect the driver 2 of semiconductor switch; mainly constitute by semiconductor element and passive component; be connected with switching circuit 3 between its input and the output; include the comparison circuit 5 and 6 that connects an end (as collector electrode) of semiconductor switch 1 by diode 4 or resistance in the driver 2; it is characterized in that: the switching voltage in the switching circuit 3 connects the input of delay circuit 14; delay circuit 14 connects or connects comparison circuit 5 or 5 and 6 by semiconductor switch 15; comparison circuit 5 and 6 is discerned the different value overcurrent by the on-state voltage drop of monitoring semiconductor switch 1 respectively; control after a period of time when short circuit current, delay circuit 14 are opened signal time delay in switching circuit 3 outputs or monitor or output signal through semiconductor switch 15 control comparison circuits 5 or 5 and 6.
4, driver 2 as claimed in claim 3 is characterized in that: comparison circuit 5 is connected same output element 16(such as optocoupler 17 with 6 output).
5, driver 2 as claimed in claim 3 is characterized in that: the output of comparison circuit 6 connects comparison circuit 5 by time delayed turn-off circuit 18.
6, driver 2 as claimed in claim 3 is characterized in that: comparison circuit 5 or 6 output connect delay circuit 19.
7, as claim 2,3,4,5,6 described drivers 2, it is characterized in that: be connected with single-shot trigger trigger 7 in the switching circuit 3.
8, as claim 1,3,4,5,6 described drivers 2, it is characterized in that: the output of switching circuit 3 partly constitutes by opening circuit 10, breaking circuit 11, slow breaking circuit 12, comparison circuit 5 or 6 connects or connects by element opens circuit 10, and comparison circuit 5 or 6 output connect breaking circuits 11 by element 13.
9, as claim 1,2,3,4,5,6 described drivers 2, it is characterized in that: the delay circuit in the driver 2 is made of resistance and semiconductor element (as transistor 20,21 or 69).
CN 92201189 1992-01-20 1992-01-20 Driver for protecting semiconductor switch Granted CN2119723U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 92201189 CN2119723U (en) 1992-01-20 1992-01-20 Driver for protecting semiconductor switch

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 92201189 CN2119723U (en) 1992-01-20 1992-01-20 Driver for protecting semiconductor switch

Publications (1)

Publication Number Publication Date
CN2119723U true CN2119723U (en) 1992-10-21

Family

ID=4948284

Family Applications (1)

Application Number Title Priority Date Filing Date
CN 92201189 Granted CN2119723U (en) 1992-01-20 1992-01-20 Driver for protecting semiconductor switch

Country Status (1)

Country Link
CN (1) CN2119723U (en)

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