CN211959218U - Photoelectric quantization device based on light injection semiconductor laser - Google Patents
Photoelectric quantization device based on light injection semiconductor laser Download PDFInfo
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- CN211959218U CN211959218U CN202020932630.3U CN202020932630U CN211959218U CN 211959218 U CN211959218 U CN 211959218U CN 202020932630 U CN202020932630 U CN 202020932630U CN 211959218 U CN211959218 U CN 211959218U
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Abstract
The utility model belongs to microwave photonics field discloses a photoelectric quantization device and method based on light injection semiconductor laser for solving the low problem of quantization accuracy that current light quantization scheme exists, including main laser instrument, optical attenuator, first polarization controller, intensity modulator, the analog signal source that awaits measuring, sample hold circuit, second polarization controller, optical circulator, semiconductor laser, photoelectric detector, merit divide ware, filter array. The semiconductor laser works in a single-period oscillation state in a main laser injection mode; the output microwave frequency after photoelectric conversion is related to the light injection intensity, so that the mapping from the amplitude of the signal to be detected to the output microwave instantaneous frequency is realized; the output of the photoelectric detector is input to a filter array with different bandwidths through a power divider to carry out frequency domain processing so as to directly realize quantization grading. The utility model discloses a main advantage is: the quantization precision is high, the system device is simple and the controllability is strong.
Description
Technical Field
The utility model discloses a photoelectric quantization device based on light injection semiconductor laser and method thereof relates to communication, radar and microwave photonics field.
Background
Analog-to-digital converters (ADCs) typically include three parts, namely, sampling, quantization, and encoding, and are widely used in communications, radar, and signal processing, as well as image processing. Due to the limitation of electron carrier mobility, the development of the conventional electrical ADC encounters a bottleneck, which limits further improvement of its performance. Therefore, researchers have proposed a variety of optical ADCs based on photonic technology to overcome this electronic bottleneck. At present, the sampling part of the optical ADC is studied more deeply, some schemes have been implemented, and compared with the quantization and coding, the research work is less, and most schemes still adopt an electrical method.
At present, the most classical quantization scheme based on the photonic technology is amplitude quantization by using a transmission response multiplication relationship among a plurality of Mach-Zehnder modulators (MZMs) connected in parallel (see [ H.F. Taylor, "optical analog-to-digital converter-design and analysis", IEEE Journal of Quantum Electronics, vol.15, No.4, pp.210-216,1979 ]). However, in the scheme, a plurality of electro-optical modulators are required to be cascaded or connected in parallel, the system structure is complex, the quantization precision is limited by the half-wave voltage precision of the modulators, and the high-precision quantization grading is difficult to realize. H.zmuda et al, florida, usa, drives a wavelength tunable laser with an Analog electrical signal, changes the wavelength of the output light of the laser, then disperses the Optical signals of different wavelengths to different positions using devices such as an Optical filter, a diffusion grating, or a condensing lens, and implements a hierarchical quantization by performing photo-electric detection at the corresponding positions (see h.zmuda, "Analog-to-digital conversion high-wavelength Optical processing", in International Symposium on Optical Science and Technology,2001, San Diego, United States). The sampling rate and the quantization precision are greatly limited by the low tuning speed of the wavelength tunable laser, the nonlinearity possibly generated in the tuning process, the low precision of the optical domain filtering and the like in the scheme. The existing quantization schemes based on photon technology have the common defect that the quantization precision is low and is difficult to further improve.
SUMMERY OF THE UTILITY MODEL
The main object of the present invention is to provide a photoelectric quantization device and method based on light injection semiconductor laser to solve the low quantization accuracy of the existing light quantization scheme, and have the advantages of high speed, high quantization accuracy, simple structure, low cost and easy implementation.
In order to achieve the above object, the present invention provides a photoelectric quantization device based on a light injection semiconductor laser, including: the device comprises a main laser, an optical attenuator, a first polarization controller, an intensity modulator, an analog electric signal source to be tested, a sample hold circuit, a second polarization controller, an optical circulator, a semiconductor laser, a photoelectric detector, a power divider and a parallel filter array;
the optical circulator is provided with an a port, a b port and a c port;
the intensity modulator is provided with an optical input end, a radio frequency input end and an optical output end;
the photoelectric detector is provided with an input end and an output end;
the parallel filter array is provided with an input end and an output end;
the power divider is provided with an input end and N output ends, optical signals are led in from the input end of the power divider and distributed into N branches and led out from the N output ends, each branch in the N branches is connected with a filter, the filters in the N branches jointly form the parallel filter array, and N is the number of the output ends of the power divider;
the ports a of the main laser, the optical attenuator, the first polarization controller, the intensity modulator, the second polarization controller and the optical circulator are sequentially connected through optical fibers; the b port of the optical circulator is connected to the semiconductor laser; the c port of the optical circulator is connected to the input end of the photoelectric detector; the analog electric signal source to be tested, the sampling holding power and the radio frequency input end of the intensity modulator are sequentially connected; the output end of the photoelectric detector is connected to the input end of the power divider; the output end of the power divider is connected with the input end of the parallel filter array; the output end of the parallel filter array is used as the output end of the photoelectric quantization device.
Further, the semiconductor laser is a single-mode distributed feedback semiconductor laser or a distributed bragg reflector laser without an isolator at an output end.
Further, the semiconductor laser works in the monocycle oscillation state, and the lower limit of the oscillation frequency of the semiconductor laser working in the monocycle oscillation state is recorded as fLUpper limit is denoted as fHThe tuning range of the monocycle oscillation frequency of the semiconductor laser is fL～fHIf the tuning bandwidth is B, then satisfy B ═ fH-fL。
Further, the parallel filter array comprises N parallel band-pass filters, and the pass-band frequency range of the parallel band-pass filters is (f)L,fH)、(fL,fH-B/N)、…、(fL,fH-(N-1)B/N)。
The operation steps of the photoelectric quantization device of the light injection semiconductor laser when in use are as follows:
The "minimum" in the above-described scheme "minimize the insertion loss of the intensity modulator by controlling the first polarization controller" means the minimum value of the insertion loss of the intensity modulator used. The "highest" of the "highest efficiencies injected into the semiconductor laser by controlling the second polarization controller" is the maximum value of the efficiency of the semiconductor laser used.
The above-mentioned alphabetic symbols are only symbols made for convenience of describing the relationship between the different components, and may be replaced with other symbols. The letters themselves do not constitute a limitation on the shape of the structure.
Has the advantages that: the utility model provides a photoelectric quantization device based on light injection semiconductor laser and method thereof. Different from the existing quantization scheme based on the photon technology, the scheme utilizes the single-period oscillation state of the light injection semiconductor laser to realize the mapping from the amplitude of the signal to be measured to the instantaneous frequency of the output microwave, and directly realizes the quantization grading through the electric domain frequency spectrum processing. Because the monocycle oscillation frequency tuning range of light injection semiconductor laser is wide, tuning speed is high and the electric domain filtering precision is high, the utility model provides a photoelectric quantization device and method have speed height, precision height, the simple and strong advantage of controllability of system's device.
Drawings
Fig. 1 is a schematic structural diagram of a photoelectric quantization apparatus based on a light injection semiconductor laser according to the present invention;
FIG. 2 is a graph of light injection intensity versus output microwave frequency in a light-quantization apparatus based on a light-injected semiconductor laser;
FIG. 3 is a waveform diagram of an output signal of an analog signal source to be tested after passing through a sample-and-hold circuit;
fig. 4 is a graph of instantaneous frequency and quantization results of the output microwave signal.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be further described in detail with reference to the accompanying drawings.
A light injection semiconductor laser based photoelectric quantization device, as shown in fig. 1, fig. 1 is a schematic structural diagram of a light injection semiconductor laser based photoelectric quantization device, including: the device comprises a main laser 1, an optical attenuator 2, a first polarization controller 3, an intensity modulator 4, an analog electric signal source to be tested 5, a sample hold circuit 6, a second polarization controller 7, an optical circulator 8, a semiconductor laser 9, a photoelectric detector 10, a power divider 11 and a parallel filter array 12;
ports a of the main laser 1, the optical attenuator 2, the first polarization controller 3, the intensity modulator 4, the second polarization controller 7 and the optical circulator 8 are sequentially connected through optical fibers; the b port of the optical circulator 8 is connected to the semiconductor laser 9; the port c of the optical circulator 8 is connected to the input end of the photoelectric detector 10; the analog electric signal source to be tested 5, the sampling hold circuit 6 and the radio frequency input end of the intensity modulator 4 are connected in sequence; the output end of the photoelectric detector 10 is connected to the input end of the power divider 11; the output end of the power divider 11 is connected with the input end of the parallel filter array 12; the output of the parallel filter array 12 serves as the output of the photoelectric quantization means.
The optical circulator is provided with an a port, a b port and a c port;
the intensity modulator is provided with an optical input end, a radio frequency input end and an output end;
the photoelectric detector is provided with an input end and an output end;
the parallel filter array is provided with an input end and an output end;
the power divider is provided with an input end and N output ends, optical signals are led in from the input end of the power divider and distributed into N parallel branches to be led out from the N output ends, each branch in the N branches is connected with a filter, the filters in the N branches jointly form the parallel filter array, and N is the number of the output ends of the power divider;
further, the semiconductor laser is a single-mode distributed feedback semiconductor laser or a distributed bragg reflector laser without an isolator at an output end.
Further, the semiconductor laser (9) works in a single-period oscillation state, and the lower limit of the oscillation frequency of the semiconductor laser working in the single-period oscillation state is recorded as fLUpper limit is denoted as fHThe tuning range of the monocycle oscillation frequency of the semiconductor laser is fL～fHIf the tuning bandwidth is B, then satisfy B ═ fH-fL。)。
Further, the parallel filter array comprises N parallel band-pass filters, and the pass-band frequency range of the parallel band-pass filters is (f)L,fH)、(fL,fH-B/N)、…、(fL,fH-(N-1)B/N)。
Fig. 1 is a schematic diagram showing the connection relationship between the technical features of the device according to the present embodiment, and the shape of each component in fig. 1 is only illustrative and is not limited to the shape and structure.
The utility model relates to a photoelectric quantization device based on light injection semiconductor laser and the concrete theory of operation of method thereof as follows:
the utility model discloses mainly based on light injection semiconductorThe nonlinear dynamics of the laser's monocycle oscillation. Setting frequency detuning and light injection intensity parameters between a main laser and a semiconductor laser to enable a light injection semiconductor laser system to work in a single-period oscillation state, wherein an output light signal of the semiconductor laser is in self-sustained single-frequency intensity oscillation; the output signal photoelectric detector can generate a single-frequency microwave signal after beat frequency, and the frequency is equal to single-period oscillation frequency. For a given frequency mismatch between the main laser and the semiconductor laser, the light injection intensity is increased, and the monocycle oscillation frequency is increased approximately linearly. The output of the analog electric signal source to be measured is loaded on the intensity modulator after the sampling and holding operation to modulate the instantaneous light injection intensity. Therefore, the frequency of the microwave signal output by the photoelectric detector, namely the monocycle oscillation frequency, can change along with the change of the amplitude of the output signal of the analog electric signal source to be detected, and the mapping from the amplitude of the signal to be detected to the instantaneous frequency of the output microwave is realized. The output of the photoelectric detector is input to a parallel filter array through a power divider, wherein the passband frequency ranges of the N parallel band-pass filters are sequentially (f)L,fH)、(fL,fH-B/N)、…、(fL,fH- (N-1) B/N); according to the difference of microwave frequency output by the photoelectric detector, the signal can pass through one or more corresponding band-pass filters, and the quantization level of the input signal can be determined by judging the positions of the band-pass filters through which the signal passes. Specifically, taking 4-bit quantization as an example, the output microwave frequency is selected as fHThe amplitude of the electrical signal at-B/4 is the first decision amplitude A1thWhen the signal amplitude is greater than A1thThe first output of the parallel filter is marked as "1" and is less than A1thMarked as "0"; selecting the frequency of the output microwave as fHThe amplitude of the electrical signal at-B/2 is the first decision amplitude A2thWhen the signal amplitude is greater than A2thThen, the second output of the parallel filter is marked as "1" and is less than A2thMarked as "0"; by analogy, selecting the output microwave frequency as fHThe amplitude of the electrical signal at-B is the fourth decision amplitude A4thWhen the signal amplitude is greater than A4thThen, the fourth output of the parallel filter is marked as "1" and is less than A4thAnd is noted as "0". Therefore, when the amplitude of the electric signal to be measured is larger than A1thThe quantized output is denoted as (1111); correspondingly, when the amplitude of the electrical signal to be measured is A2th～A1thA is3th～A2thA is4th～A3thIn between, the quantized outputs correspond to (0111), (0011), and (0001), respectively.
The operation steps of the photoelectric quantization device of the light injection semiconductor laser when in use are as follows:
In order to verify the utility model discloses technical scheme's effect has carried out the experiment and has verified. In the experiment, the wavelength of the main laser 1 is 1552.870nm, and the output power is 13.5 dBm; the semiconductor laser 9 is a commercial single-mode distributed feedback semiconductor laser, the free-running wavelength and power of the laser are 1552.915nm and 4.98dBm respectively, and the frequency difference between the main laser 1 and the semiconductor laser 9 is 5.6 GHz. The optical attenuator 2 is arranged to enable the slave laser to work in a single-period oscillation state, and fig. 2 is a graph of light injection intensity of a photoelectric quantification device based on a light injection semiconductor laser and output microwave frequency: with the increase of the light injection intensity, the monocycle oscillation frequency, i.e., the output microwave frequency of the photodetector 10, is increased from fLApproximately linear increase to f at 9.6GHzH22.1GHz, tuning range B12.5 GHz. The intensity modulator 4 is a 10GHz band mach-zehnder modulator biased at a linear point. The microwave signal output by the analog electric signal source 5 to be tested is subjected to sample and hold operation by the sample and hold circuit 6, and then a multi-level step signal is output, and the signal shown in fig. 3 is used for substitution in the experiment. The signal shown in figure 3 is applied to an intensity modulator 4 so that the instantaneous frequency of the output microwave varies with the amplitude of the signal under test. FIG. 4 is a graph of the instantaneous frequency of the output microwave signal, with the four state values for the instantaneous frequency of the microwave being 13.8, 20.8, 17.3, and 10.3GHz, respectively. Selecting N to 4, and setting the pass band frequency ranges of the 4 band-pass filters of the parallel filter array 12 to be 9.6-22.1 GHz, 9.6-18.975 GHz, 9.6-15.85 GHz and 9.6-12.725 GHz respectively. The output microwave signal of the photoelectric detector 10 is input to the parallel filter array 12 after passing through the power divider 11; according to the difference of the output microwave frequency, the signal can pass through one or more corresponding band-pass filters, and the quantization level of the input signal can be determined by judging the filter position of the band-pass through which the signal passes. In fig. 4, quantization levels corresponding to four state values of the microwave instantaneous frequency are shown, and corresponding encoding results are "0011", "1111", "0111" and "0001", that is, 4-bit photoelectric quantization is realized.
The above-mentioned embodiments, further detailed description of the objects, technical solutions and advantages of the present invention, it should be understood that the above-mentioned embodiments are only specific embodiments of the present invention, and are not intended to limit the present invention, and any modifications, equivalent substitutions, improvements, etc. made within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (3)
1. A photoelectric quantization apparatus based on a light-injected semiconductor laser, comprising: the device comprises a main laser (1), an optical attenuator (2), a first polarization controller (3), an intensity modulator (4), an analog electric signal source to be tested (5), a sample hold circuit (6), a second polarization controller (7), an optical circulator (8), a semiconductor laser (9), a photoelectric detector (10), a power divider (11) and a parallel filter array (12);
the optical circulator is provided with an a port, a b port and a c port;
the intensity modulator is provided with an optical input end, a radio frequency input end and an optical output end;
the photoelectric detector is provided with an input end and an output end;
the parallel filter array is provided with an input end and an output end;
the power divider is provided with an input end and N output ends, optical signals are led in from the input end of the power divider and distributed into N branches and led out from the N output ends, each branch in the N branches is connected with a filter, the filters in the N branches jointly form the parallel filter array, and N is the number of the output ends of the power divider;
the ports a of the main laser (1), the optical attenuator (2), the first polarization controller (3), the intensity modulator (4), the second polarization controller (7) and the optical circulator (8) are sequentially connected through optical fibers; the b port of the optical circulator (8) is connected to a semiconductor laser (9); the port c of the optical circulator (8) is connected to the input end of the photoelectric detector (10); the analog electric signal source to be tested (5), the sampling hold circuit (6) and the radio frequency input end of the intensity modulator (4) are sequentially connected; the output end of the photoelectric detector (10) is connected to the input end of the power divider (11); the output end of the power divider (11) is connected with the input end of the parallel filter array (12); the output end of the parallel filter array (12) is used as the output end of the photoelectric quantization device.
2. An optical-electrical quantization apparatus based on a light-injected semiconductor laser as claimed in claim 1 characterized in that the semiconductor laser (9) is a single-mode distributed feedback semiconductor laser or a distributed bragg reflector laser without an isolator at the output.
3. An optical quantization device based on a light injected semiconductor laser as claimed in claim 1 characterized in that the semiconductor laser (9) is operated in a single period oscillation state, and the lower limit of the oscillation frequency of the semiconductor laser operated in the single period oscillation state is denoted as fLUpper limit is denoted as fHThe tuning range of the monocycle oscillation frequency of the semiconductor laser is fL～fHIf the tuning bandwidth is B, then satisfy B ═ fH-fL。
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| CN111490830A (en) * | 2020-05-28 | 2020-08-04 | 苏州大学 | Photoelectric quantization device and method based on light injection semiconductor laser |
| CN111490830B (en) * | 2020-05-28 | 2024-10-22 | 苏州大学 | Photoelectric quantification device and method based on light injection semiconductor laser |
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| CN111490830A (en) * | 2020-05-28 | 2020-08-04 | 苏州大学 | Photoelectric quantization device and method based on light injection semiconductor laser |
| CN111490830B (en) * | 2020-05-28 | 2024-10-22 | 苏州大学 | Photoelectric quantification device and method based on light injection semiconductor laser |
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