CN211957508U

CN211957508U - Prevent membrane switch structure of short circuit

Info

Publication number: CN211957508U
Application number: CN202020729716.6U
Authority: CN
Inventors: 黄国维
Original assignee: Favor Electronics Dongguan Co ltd
Current assignee: Favor Electronics Dongguan Co ltd
Priority date: 2020-05-06
Filing date: 2020-05-06
Publication date: 2020-11-17
Anticipated expiration: 2030-05-06

Abstract

The utility model provides a prevent membrane switch structure of short circuit, including circular-arc first conducting wire layer and circular shape second conducting wire layer, first conducting wire layer interval is around outside the second conducting wire layer, and first conducting wire layer is connected with first electrically conductive foot, and second conducting wire layer is connected with second electrically conductive foot, and second electrically conductive foot is located the circular arc breach department on first conducting wire layer; the first conductive circuit layer is covered with a first carbon film layer, the second conductive circuit layer is provided with a second carbon film layer, the first carbon film layer is connected with a circular key elastic sheet, the second conductive pins are covered with a third carbon film layer, the third carbon film layer is provided with a first insulation layer, and the first insulation layer is located between the key elastic sheet and the third carbon film layer. The utility model discloses set up the individual layer circuit structure and realize the switch function, can effectively reduce the thickness of membrane switch; the first insulating layer can effectively prevent the first conductive circuit layer and the second conductive circuit layer from being short-circuited.

Description

Prevent membrane switch structure of short circuit

Technical Field

The utility model relates to a membrane switch specifically discloses a prevent membrane switch structure of short circuit.

Background

The membrane switch is a flat switch element, when the membrane switch is pressed down, the contact of the upper circuit deforms downwards to be in contact with the polar plate of the lower circuit for conduction, after the finger is loosened, the contact of the upper circuit rebounds back to the circuit for disconnection, and the circuit triggers a signal.

In the prior art, the membrane switch mainly comprises an upper circuit and a lower circuit, the upper circuit is connected with a key elastic sheet, the key elastic sheet is positioned above the lower circuit, and an insulating layer is arranged between the upper circuit and the lower circuit which are arranged up and down and used for avoiding short circuit between the upper circuit and the lower circuit.

SUMMERY OF THE UTILITY MODEL

Therefore, it is necessary to provide a short-circuit prevention thin film switch structure for solving the problems in the prior art, which can effectively prevent a short circuit between two controlled lines and can effectively reduce the thickness of the thin film switch.

In order to solve the prior art problem, the utility model discloses a prevent film switch structure of short circuit, including circular-arc first conducting wire layer and circular shape second conducting wire layer, first conducting wire layer interval is around outside the second conducting wire layer, and first conducting wire layer is connected with first conductive foot, and second conducting wire layer is connected with second conductive foot, and second conductive foot is located the circular arc breach of first conducting wire layer;

the first conductive circuit layer is covered with a first carbon film layer, the second conductive circuit layer is provided with a second carbon film layer, the first carbon film layer is connected with a circular key elastic sheet, the second carbon film layer is located under the key elastic sheet, the second conductive pins are covered with a third carbon film layer, the third carbon film layer is provided with a first insulation layer, and the first insulation layer is located between the key elastic sheet and the third carbon film layer.

Furthermore, the first conductive circuit layer and the second conductive circuit layer are both metal silver layers.

Further, the first conductive pin and the second conductive pin are both silver conductive pins.

Furthermore, the area of the first carbon film layer is larger than that of the first conductive circuit layer, and the area of the second carbon film layer is larger than that of the second conductive circuit layer.

Further, the first insulating layer is a heat-conducting silica gel layer.

Furthermore, the first conductive pins and the second conductive pins are provided with annular second insulating layers, and the first carbon film layer, the second carbon film layer and the third carbon film layer are all located in the second insulating layers.

Furthermore, the first conductive circuit layer, the second conductive circuit layer, the first conductive pins and the second conductive pins are fixed on the insulating bottom plate, and the key elastic piece is covered with an insulating cover film.

Furthermore, the insulating cover film is a PET film.

The utility model has the advantages that: the utility model discloses a thin film switch structure of preventing short circuit sets up individual layer circuit structure and realizes the switch function, and first conducting wire layer and second conducting wire layer are located same layer structure, can effectively reduce the number of piles of thin film switch to effectively reduce thin film switch's thickness; in addition, the first insulating layer between the bottom edge of the button elastic sheet and the third carbon film layer can effectively avoid the first conductive circuit layer and the second conductive circuit layer from being communicated under the non-pressing condition, namely, the short circuit between the first conductive circuit layer and the second conductive circuit layer can be effectively avoided, and the membrane switch is reliable in structure and good in performance.

Drawings

Fig. 1 is a perspective schematic view of the present invention.

Fig. 2 is a schematic cross-sectional view along a-a' in fig. 1.

Fig. 3 is a schematic cross-sectional view along B-B' in fig. 1.

Fig. 4 is a schematic view of the cross-sectional structure of the rear edge a-a' in fig. 1 after the insulating base plate and the insulating cover film are packaged.

Fig. 5 is a schematic view of the cross-sectional structure of the rear edge B-B' in fig. 1 after the insulating base plate and the insulating cover film are packaged.

The reference signs are: the key comprises a first conductive circuit layer 10, a first conductive pin 11, a first carbon film layer 12, a second conductive circuit layer 20, a second conductive pin 21, a second carbon film layer 22, a third carbon film layer 23, a first insulating layer 24, a key dome 30, a second insulating layer 40, an insulating bottom plate 50 and an insulating cover film 51.

Detailed Description

For further understanding of the features and technical means of the present invention, as well as the specific objects and functions attained by the present invention, the present invention will be described in further detail with reference to the accompanying drawings and detailed description.

Refer to fig. 1 to 5.

The embodiment of the utility model discloses prevent membrane switch structure of short circuit, as shown in fig. 1 to 3, including circular-arc first conducting wire layer 10 and the circular shape second conducting wire layer 20 that is located the same layer, first conducting wire layer 10 interval centers on outside second conducting wire layer 20, and first conducting wire layer 10 centers on outside second conducting wire layer 20 promptly, and second conducting wire layer 20 and first conducting wire layer 10 are each other not contacted, and first conducting wire layer 10 is connected with first conductive pin 11, and second conducting wire layer 20 is connected with second conductive pin 21, and second conductive pin 21 is located the circular arc breach department of first conducting wire layer 10, and second conductive pin 21 and first conducting wire layer 10 are not contacted;

the first conductive circuit layer 10 is covered with a first carbon film layer 12, the second conductive circuit layer 20 is covered with a second carbon film layer 22, the first carbon film layer 12 is conductively connected with a round key spring sheet 30 by tin paste and the like, the ring edge of the key spring sheet 30 with the center arched upwards is in contact connection with the first conductive circuit layer 10, when the key spring sheet 30 is pressed, the central point of the spring sheet is sunken to be contacted with a circuit on a PCB so as to form a loop, preferably, the key spring sheet 30 is a round metal spring sheet, the bottom of the key spring sheet 30 can be plated with gold, nickel or silver, the second carbon film layer 22 is positioned under the key spring sheet 30, the second conductive pin 21 is covered with a third carbon film layer 23, the carbon film has good conductive performance, the conduction effect between the key spring sheet 30 and the conductive circuit layer can be effectively improved, the third carbon film layer 23 is provided with a first insulating layer 24, the first insulating layer 24 is located between the key spring 30 and the third carbon film layer 23, the first insulating layer 24 can effectively prevent the peripheral edge of the key spring 30 from contacting the second conductive pins 21, and under the condition of no external force, the key spring 30 can be prevented from short-circuiting the first conductive circuit layer 10 and the second conductive pins 21 to cause the thin film switch to be in a conducting state for a long time, so that the effectiveness of the thin film switch is effectively ensured.

In this embodiment, the first conductive trace layer 10 and the second conductive trace layer 20 are both metal silver layers, and silver has good conductive performance, which can effectively improve the performance of the membrane switch.

Based on the above embodiment, the first conductive pin 11 and the second conductive pin 21 are both silver conductive pins, and are connected to other lines through the silver conductive pins, so that the control speed of the membrane switch can be effectively increased.

In this embodiment, the area of the first carbon film layer 12 is larger than the area of the first conductive trace layer 10, the area of the second carbon film layer 22 is larger than the area of the second conductive trace layer 20, the area of the carbon film layer is larger than the area of the conductive trace layer, so that the carbon film layer can be effectively ensured to fully exert the effect, the conductive trace layer can be fully improved in conductivity, and when the key dome 30 is pressed, the bottom of the key dome 30 only contacts with the carbon film layer and does not directly contact with the conductive trace layer.

In this embodiment, the first insulating layer 24 is a thermal conductive silica gel layer, the thermal conductive silica gel layer has good thermal conductivity, insulation performance and elasticity, and the first insulating layer 24 may also be a rubber layer.

In this embodiment, the same annular second insulating layer 40 is disposed on the first conductive pin 11 and the second conductive pin 21, and the first carbon film layer 12, the second carbon film layer 22, and the third carbon film layer 23 are all located in the enclosure of the second insulating layer 40, so as to prevent the first conductive circuit layer 10 and the second conductive circuit layer 20 from directly contacting with an external circuit, thereby effectively improving the reliability of the thin film switch.

Based on the above embodiment, as shown in fig. 4 and 5, the first conductive trace layer 10, the second conductive trace layer 20, the first conductive pin 11, and the second conductive pin 21 are all fixed on the insulating base plate 50, the key dome 30 is covered with the insulating cover film 51, the insulating cover film 51 further covers a portion of the first carbon film layer 12, the first insulating layer 24, the second insulating layer 40, the first conductive pin 11, and the second conductive pin 21, and the insulating cover film 51 and the insulating base plate 50 clamp and protect structures therebetween.

Based on the above embodiment, the insulating cover film 51 is a PET film, and the insulating base plate 50 may be an RF4 substrate.

The above-mentioned embodiments only represent some embodiments of the present invention, and the description thereof is specific and detailed, but not to be construed as limiting the scope of the present invention. It should be noted that, for those skilled in the art, without departing from the spirit of the present invention, several variations and modifications can be made, which are within the scope of the present invention. Therefore, the protection scope of the present invention should be subject to the appended claims.

Claims

1. The short-circuit prevention thin film switch structure is characterized by comprising a first arc-shaped conductive circuit layer (10) and a second circular conductive circuit layer (20), wherein the first conductive circuit layer (10) surrounds the second conductive circuit layer (20) at intervals, the first conductive circuit layer (10) is connected with a first conductive pin (11), the second conductive circuit layer (20) is connected with a second conductive pin (21), and the second conductive pin (21) is positioned at an arc notch of the first conductive circuit layer (10);

the key structure is characterized in that a first carbon film layer (12) covers the first conducting circuit layer (10), a second carbon film layer (22) covers the second conducting circuit layer (20), a round key elastic sheet (30) is connected to the first carbon film layer (12), the second carbon film layer (22) is located under the key elastic sheet (30), a third carbon film layer (23) covers the second conducting pin (21), a first insulating layer (24) is arranged on the third carbon film layer (23), and the first insulating layer (24) is located between the key elastic sheet (30) and the third carbon film layer (23).

2. The short-circuit prevention thin-film switch structure according to claim 1, wherein the first conductive circuit layer (10) and the second conductive circuit layer (20) are both metallic silver layers.

3. A short-circuit prevention membrane switch structure as claimed in claim 2, characterized in that the first conductive pin (11) and the second conductive pin (21) are silver conductive pins.

4. The short-circuit prevention thin film switch structure of claim 1, wherein the area of the first carbon film layer (12) is larger than the area of the first conductive trace layer (10), and the area of the second carbon film layer (22) is larger than the area of the second conductive trace layer (20).

5. The membrane switch structure of claim 1, wherein the first insulating layer (24) is a heat conductive silicone layer.

6. The short-circuit prevention thin-film switch structure according to claim 1, wherein a second insulating layer (40) is disposed on the first conductive pin (11) and the second conductive pin (21) and has a circular ring shape, and the first carbon film layer (12), the second carbon film layer (22), and the third carbon film layer (23) are all located in the enclosure of the second insulating layer (40).

7. The short-circuit prevention thin-film switch structure according to claim 6, wherein the first conductive circuit layer (10), the second conductive circuit layer (20), the first conductive pins (11) and the second conductive pins (21) are all fixed on an insulating bottom plate (50), and an insulating cover film (51) covers the key dome (30).

8. The structure of a short-circuit prevention membrane switch as claimed in claim 7, characterized in that the insulating cover membrane (51) is a PET membrane.