CN211934270U

CN211934270U - Plasma energy control switch circuit and control system thereof

Info

Publication number: CN211934270U
Application number: CN201921770275.8U
Authority: CN
Inventors: 李政; 肖国庆; 尹辉; 唐宇豪
Original assignee: Chengdu Meichuang Zhuoer Medical Technology Co ltd
Current assignee: Chengdu Meichuang Zhuoer Medical Technology Co ltd
Priority date: 2019-10-22
Filing date: 2019-10-22
Publication date: 2020-11-17
Anticipated expiration: 2029-10-22

Abstract

The utility model discloses a plasma energy control switch circuit and control system thereof, include peak power control circuit, singlechip and be arranged in establishing ties the switch module in plasma energy control system circuit, wherein: the peak power control circuit is used for carrying out dynamic ground current sampling and filtering on the plasma energy control system, carrying out amplification factor adjustment on the generated voltage signal so as to adjust a peak power point, and then sending the peak power point to the single chip microcomputer; the single chip microcomputer is used for receiving and processing the voltage signal sent by the peak power control circuit, and controlling the working period of the switch module according to the processed voltage signal, so that the output power of the plasma energy control system does not exceed the preset peak power and meets the preset power curve. The utility model discloses can solve the energy excitation in the twinkling of an eye of plasma energy control system output weak, be difficult for arousing plasma, plasma is difficult for lasting the production, cuts inefficiency, glues the sword, cuts sharp scheduling problem not.

Description

Plasma energy control switch circuit and control system thereof

Technical Field

The utility model relates to the field of medical equipment, concretely relates to plasma energy capacity control switch circuit and control system thereof.

Background

The radio frequency plasma operation system is a new generation low temperature plasma operation system, can be used for soft tissue dissection, excision, hemostasis and drying of surgical operations, can be matched with an endoscope system to carry out intracavity operations or be matched with an image system to carry out interventional therapy and the like, eliminates the damage and harm of radio frequency to doctors and patients, improves the operation efficiency, and simultaneously has various electrodes with different outer diameters, different curvatures and different lengths which are suitable for different departments.

When the plasma surgical system is used for surgery, the energy of the plasma surgical system needs to be controlled within a certain range, the instantaneous energy output by the existing plasma surgical system is weak in excitation, plasma is not easy to excite, the plasma is not easy to continuously generate, and the problems of knife adhesion, no sharp cutting of a scalpel, low cutting efficiency and the like can occur.

SUMMERY OF THE UTILITY MODEL

In view of this, the present application provides a plasma energy control switch circuit and a control system thereof, where the switch circuit is connected in series to a line of the plasma energy control system, so as to solve the problems of weak excitation of output instantaneous energy, difficulty in exciting plasma, difficulty in continuously generating plasma, low cutting efficiency, and the like, and the problems of knife sticking and the cutting of a scalpel is not sharp. For solving above technical problem, the utility model provides a technical scheme as follows:

an aspect of the utility model is to provide a plasma energy control switch circuit, include peak power control circuit, singlechip and be arranged in establishing ties the switch module in plasma energy control system circuit, wherein:

the peak power control circuit: the ground current sampling and filtering circuit is used for dynamically sampling and filtering a plasma energy output module (namely a bridge arm bus of a full-bridge inversion and booster circuit which is described later) in a plasma energy control system to generate a voltage signal, carrying out amplification factor adjustment on the voltage signal to adjust a peak power point, and then sending the voltage signal subjected to amplification factor adjustment to the single chip microcomputer;

the single chip microcomputer: and the power control circuit is used for receiving and processing the voltage signal sent by the peak power control circuit, and controlling the working period of the switch module according to the processed voltage signal (specifically, when the voltage signal is greater than a threshold), so that the output power of the plasma energy output module does not exceed a preset peak power and meets a preset power curve.

Further, the switch module includes a VMOS type switch module or a relay type switch module.

Further, the VMOS type switch module includes a PMOS type switch module or an NMOS type switch module.

Further, the VMOS type switch module includes an anti-interference unit, an amplification switch unit, a driving switch unit, and a switch unit for being connected in series in a line of the plasma energy control system, in which:

the anti-interference unit: the switch control signal processing unit is used for receiving the switch control signal sent by the single chip microcomputer, performing anti-interference processing on the switch control signal and then sending the switch control signal to the amplification switch unit;

the amplification switch unit: the switch control signal is used for receiving and amplifying the switch control signal sent by the anti-interference unit, and then is sent to the driving switch unit;

the drive switch unit: the switch control circuit is used for receiving the switch control signal sent by the amplification switch unit and then performing on-off action (for example, when the switch control signal sent to the anti-interference unit by the singlechip is in a low level, the switch unit is driven to be on, otherwise, the switch unit is driven to be off);

the switch unit: for maintaining the same on-off action as the driving switch unit.

Furthermore, in the peak power control circuit, for different types of tool bits, the amplification factor is different; for the cutter heads of the same model, the amplification factor after sampling and filtering each time is constant.

Further, the switch module includes a first MOS transistor Q1, a second MOS transistor Q2, a first regulator Z1, a first triode S1, a first diode D1, a first resistor R1, a second resistor R2, a third resistor R3, a fourth resistor R4, a fifth capacitor C5, and a first external power source U1, where:

a source and a drain of the first MOS transistor Q1 are respectively used as an input terminal and an output terminal of the switching module to be connected in series in a line of the plasma energy control system, the first resistor R1 and the first regulator Z1 are simultaneously connected in parallel between a source and a gate of the first MOS transistor Q1, a positive electrode of the first regulator Z1 is connected to a gate of the first MOS transistor Q1, a gate of the first MOS transistor Q1 is connected to one end of the second resistor R2, the other end of the second resistor R2 is connected to a drain of the second MOS transistor Q2, a source of the second MOS transistor Q2 is grounded, a gate of the second MOS transistor Q2 is simultaneously connected to one end of the third resistor R3 and a collector of the first triode S1, the other end of the third resistor R3 is connected to the first external power supply U8, an emitter of the first triode S1 is simultaneously connected to a negative electrode of the first diode S1 and the first capacitor 1C 1, the other end of the fifth capacitor C5 is grounded, the anode of the first diode D1 is connected with one end of the fourth resistor R4, and the other end of the fourth resistor R4 is connected with the single chip microcomputer as the switch control input end of the switch module.

Further, the peak power control circuit comprises a bus sampling unit, an input filtering unit, an amplification factor adjusting unit and an output unit, wherein:

the bus sampling unit: the ground current sampling circuit is used for dynamically sampling ground current of a post-stage circuit (namely a full-bridge inverter and booster circuit) of the switch module and sending a sampling signal to the input filtering unit;

the input filtering unit: the sampling unit is used for receiving the sampling signal sent by the bus sampling unit, filtering the sampling signal to generate a voltage signal, and then sending the voltage signal to the amplification factor adjusting unit;

the magnification adjustment unit: the power amplifier is used for receiving the voltage signal, adjusting the amplification factor to adjust the peak power point, and then sending the voltage signal after the adjustment of the amplification factor to an output unit;

the output unit: and the voltage signal is used for receiving the voltage signal sent by the amplification factor adjusting unit and sending the voltage signal to the singlechip.

Further, specifically, the peak power control circuit samples the bus current of the bridge arm bus of the full-bridge inverter and booster circuit through the sampling resistor.

Further, the switching circuit further includes a short detection circuit.

Further, the short circuit detection circuit is a parallel short circuit detection circuit, which comprises

The parallel sampling unit: the sampling circuit is used for sampling a circuit at the next stage of the switch module (namely a boost output end of a full-bridge inversion and boost circuit) in parallel, and sending a sampling voltage obtained by sampling to the next stage;

the Hall voltage sensor: the parallel sampling unit is used for receiving the sampling voltage sent by the parallel sampling unit, carrying out isolation processing and then sending the obtained sampling voltage to the next stage;

the rectification filtering unit: the Hall voltage sensor is used for receiving the sampling voltage sent by the Hall voltage sensor, carrying out rectification and filtering processing on the sampling voltage and then sending the obtained sampling voltage to the next stage;

the comparison unit: and the short circuit detection circuit is used for receiving the sampling voltage sent by the rectifying and filtering unit, comparing the sampling voltage with the regulated reference voltage, and then sending a generated short circuit detection signal to the single chip microcomputer to perform short circuit judgment and on-off action.

Further, the working period of the switch module consists of off time and on time, the single chip microcomputer controls the on time, and the off time is kept unchanged (only the length of the on time is adjusted) when the preset peak power is unchanged (namely, when the gear is not changed).

Another aspect of the present application is to provide a plasma energy control system, which includes an AC/DC module, a DC control module, a plasma energy output module, a control panel, and the above switching circuit, wherein the switching circuit is connected in series between the DC control module and the plasma energy output module through its internal switching module.

Further, the plasma energy output module comprises a full-bridge inverter and booster circuit, an impedance matching and output circuit and a second drive control circuit, wherein:

the second drive control circuit: after being isolated, the inverter is used for driving the full-bridge inverter and the booster circuit;

the full-bridge inverter and booster circuit: the voltage output by the switching circuit is inverted and boosted and then output to the impedance matching and output circuit;

the impedance matching and output circuit: and the control panel is used for performing impedance matching on the voltage input by the full-bridge inverter and booster circuit and outputting the voltage to the control panel.

The utility model provides a plasma energy control switch circuit and control system thereof, the switch module among the switch circuit is used for establishing ties in plasma energy control system's circuit, peak power control circuit among the switch circuit is used for carrying out developments ground current sample, filtering to plasma energy control system plasma energy output module, generates voltage signal, and carry out the magnification adjustment to voltage signal, in order to adjust the peak power point, then send the voltage signal after the magnification is adjusted to the singlechip, the singlechip handles and controls the duty cycle of switch module according to the voltage signal that receives, thereby make plasma energy output module's output power (being plasma energy control system's output power) no longer than preset peak power and satisfy preset power curve, it is weak to have solved the energy excitation in the moment of output, the plasma is not easy to excite, the plasma is not easy to continuously generate, the cutting efficiency is low, and the problems of knife sticking, no sharp cutting of a scalpel and the like can occur; additionally, the utility model provides a plasma energy control system including above-mentioned plasma energy control switch circuit, plasma operation system adopt the utility model provides a plasma energy control system time energy arouses by force, cuts efficiently, can not appear gluing the not sharp scheduling problem of sword, scalpel cutting.

Drawings

Fig. 1 is a block diagram illustrating a plasma energy control switch circuit according to an exemplary embodiment.

Fig. 2 is a schematic diagram illustrating a circuit structure of a switch module according to an exemplary embodiment.

Fig. 3 is a block diagram illustrating a peak power control circuit according to an exemplary embodiment.

Fig. 4 is a schematic diagram illustrating a peak power control circuit, a parallel short circuit detection circuit, and a full bridge inverter and booster circuit according to an exemplary embodiment.

Fig. 5 is a block diagram illustrating a plasma energy control system according to an exemplary embodiment.

Fig. 6 is a schematic diagram illustrating a relay-type switch module configuration according to an exemplary embodiment.

Fig. 7 is a schematic diagram of a parallel short detection circuit according to an exemplary embodiment.

Detailed Description

In order to make those skilled in the art better understand the technical solution of the present invention, the present invention will be further described in detail with reference to the accompanying drawings and specific embodiments.

Example 1

As shown in fig. 1, the present embodiment provides a plasma energy control switch circuit, which includes a peak power control circuit, a single chip, and a switch module, wherein:

the peak power control circuit: the ground current sampling and filtering circuit is used for dynamically sampling and filtering a full-bridge inversion and boosting circuit of a plasma energy output module in a plasma energy control system to generate a voltage signal, and the voltage signal is subjected to amplification factor adjustment to adjust a peak power point, and then the voltage signal subjected to amplification factor adjustment is sent to the single chip microcomputer;

the single chip microcomputer: and the power control circuit is used for receiving and processing the voltage signal sent by the peak power control circuit, and controlling the working period of the switch module according to the processed voltage signal (specifically, when the voltage signal is greater than a threshold value, and when the voltage signal is less than or equal to a set threshold value, the voltage signal is not processed, namely the switch module is always opened), so that the output power of the plasma energy output module does not exceed the preset peak power and meets a preset power curve.

As a priority, the switch module in this embodiment may include a VMOS type switch module or a relay type switch module, and when the VMOS type switch module is adopted in this embodiment, the VMOS type switch module may include an anti-interference unit, an amplification switch unit, a driving switch unit, and a switch unit for being connected in series in a line of the plasma energy control system, in which:

the drive switch unit: the switch control unit is used for receiving the switch control signal sent by the amplification switch unit and then performing on-off action; for example, when the switch control signal sent by the single chip microcomputer to the anti-interference unit is at a low level, the switch unit is driven to be switched on; when the switch control signal sent to the anti-interference unit by the single chip microcomputer is at a high level, the switch unit is driven to be switched off;

It should be noted that the input end and the output end of the switch unit are the input end and the output end of the switch module, as shown in fig. 2, the circuit structure of the switch module in this embodiment may include a first MOS transistor Q1, a second MOS transistor Q2, a first voltage regulator Z1, a first triode S1, a first diode D1, a first resistor R1, a second resistor R2, a third resistor R3, a fourth resistor R4, a fifth capacitor C5 (a fifth capacitor C5 may be omitted), and a third external power source U3, where:

a source and a drain of the first MOS transistor Q1 are respectively used as an input terminal and an output terminal of the switching module to be connected in series in a line of the plasma energy control system, the first resistor R1 and the first regulator Z1 are simultaneously connected in parallel between a source and a gate of the first MOS transistor Q1, a positive electrode of the first regulator Z1 is connected to a gate of the first MOS transistor Q1, a gate of the first MOS transistor Q1 is connected to one end of the second resistor R2, the other end of the second resistor R2 is connected to a drain of the second MOS transistor Q2, a source of the second MOS transistor Q2 is grounded, a gate of the second MOS transistor Q2 is simultaneously connected to one end of the third resistor R3 and a collector of the first triode S1, the other end of the third resistor R3 is connected to the third external power supply U3, an emitter of the first triode S1 is simultaneously connected to a negative electrode of the first diode S1 and the first capacitor 1C 1, the other end of the fifth capacitor C5 is grounded, the anode of the first diode D1 is connected with one end of the fourth resistor R4, and the other end of the fourth resistor R4 is connected with the single chip microcomputer as the switch control input end of the switch module.

In the switch module circuit structure provided by this embodiment, the fourth resistor R4, the first diode D1, and the fifth capacitor C5 together form an anti-interference unit, wherein the first diode D1 and the fifth capacitor C5 together can play a role of preventing false triggering and interference, the third resistor R3 and the first transistor S1 form an amplification switch unit, the second resistor R2 and the second MOS transistor Q2 form a driving switch unit, wherein the second resistor R2 is a voltage dividing resistor, the first MOS transistor, the first resistor R1, and the first voltage regulator Z1 form a switch unit, and a voltage regulator is provided in the switch unit, so that the gate voltage stability of the first MOS transistor Q1 can be ensured, and the working quality of the circuit can be improved; in order to make the circuit structure simple, the first MOS transistor in the switching unit may be a PMOS transistor, and in specific work, when the base of the first triode S1 receives a high level from the single chip, the first triode S1 is turned on, the gate of the second MOS transistor Q2 is a low level, the second MOS transistor Q2 is turned off, at this time, the gate of the first MOS transistor Q1 in the switching unit is a high level, the first MOS transistor Q1 is turned off, and correspondingly, the switching unit and the plasma energy control system are turned off; the base of the first triode S1 is disconnected when receiving low level from the single chip microcomputer, the grid of the second MOS tube Q2 is high level, the second MOS tube Q2 is conducted, the grid of the first MOS tube Q1 in the switch unit is low level at the moment, the first MOS tube Q1 is conducted, the switch unit is conducted, correspondingly, the switch unit and the plasma energy control system are conducted, therefore, the single chip microcomputer sends the high level with certain duration and the low level with certain duration to the switch control input end of the switch module to control the working period of the switch circuit. In addition, as another embodiment different from the above-mentioned switch module circuit structure, the first MOS transistor Q1 in the switch unit may also adopt an NMOS transistor or a relay to implement the switching function. The VMOS tube is adopted, so that the reliability of the embodiment is higher, and the VMOS tube has the characteristics of rapid switching, difficult damage, long service life and the like. In this embodiment, the third external power source U3 may be 12V.

Preferably, as shown in fig. 3, the peak power control circuit includes a bus sampling unit, an input filtering unit, an amplification factor adjusting unit, and an output unit, wherein:

the bus sampling unit: the ground current sampling module is used for sampling the dynamic ground current of the plasma energy output module and sending a sampling signal to the input filtering unit;

the magnification adjustment unit: the voltage signal receiving unit is used for receiving the voltage signal, carrying out amplification factor adjustment and then sending the voltage signal subjected to amplification factor adjustment to the output unit; the amplification factor of the amplification factor adjusting unit is determined according to preset power curves of different types of tool bits, the tool bits are different in type and the amplification factors may be different, for example, if the peak power of the preset power curve a of the tool bit a is 300W, the peak power corresponds to the amplification factor 2, and if the peak power is changed, the corresponding amplification factor is changed;

To better explain the peak power control circuit, as shown in fig. 4, the present embodiment provides a specific peak power control circuit, which includes a first amplifier V1, a first capacitor C1, a second capacitor C2, a third capacitor C3, a fourth capacitor C4, a fifth resistor R5, a sixth resistor R6, a seventh resistor R7, an eighth resistor R8, a ninth resistor R9, and a first sliding potentiometer RW1 (or an effective component such as an electronic potentiometer, etc.), wherein:

a forward input end of the first amplifier V1 is connected to one end of the fifth resistor R5 and one end of the second capacitor C2, the other end of the second capacitor C2 is grounded, the other end of the fifth resistor R5 is grounded through the first capacitor C1, one end of the first capacitor C1 connected to the fifth resistor R5 is further connected to one end of the ninth resistor R9, the other end of the ninth resistor R9 is grounded, the other end of the ninth resistor R9 opposite to the ground is used as a bus sampling input end and connected to the plasma energy output module, an inverting input end of the first amplifier V1 is connected to one end of the sixth resistor R6 and one end of the third capacitor C3, the other end of the sixth resistor R6 and the other end of the third capacitor C3 are grounded, an output end of the first amplifier V1 is connected to an inverting input end of the first sliding potentiometer 1, the sliding tap of the first sliding potentiometer RW1 is connected to the output terminal of the first amplifier V1, the output terminal of the first amplifier V1 is further connected to one end of the seventh resistor R7, the other end of the seventh resistor R7 is used as the output terminal of the energy control module and is simultaneously connected to one end of the fourth capacitor C4 and one end of the eighth resistor R8, and the other end of the fourth capacitor C4 and the other end of the eighth resistor R8 are simultaneously grounded.

In the peak power control circuit, the ninth resistor R9 forms a bus sampling unit, the first capacitor C1, the second capacitor C2 and the fifth resistor R5 form an input filter unit, the third capacitor C3, the sixth resistor R6, the first amplifier V1 and the first sliding potentiometer RW1 form an amplification factor adjusting unit, and the seventh resistor R7, the eighth resistor R8 and the fourth capacitor C4 form an output unit.

As shown in fig. 4, in the specific implementation of this embodiment, the plasma energy output module includes a full-bridge inverter and a voltage boost circuit, the full-bridge inverter and the voltage boost circuit include a full-bridge inverter circuit and a voltage boost transformer that are connected to each other, a bus sampling input end of the peak power control circuit may be connected to a bridge arm bus in the full-bridge inverter circuit, and since a sampling current is small or there is interference, the sampling current may pass through a filtering unit and an amplification factor adjusting unit in the peak power control circuit in sequence to perform filtering amplification, and finally, a voltage signal is generated and sent to the single chip microcomputer through an output unit.

Preferably, the switch circuit further includes a short-circuit detection circuit, and the short-circuit detection circuit is a parallel short-circuit detection circuit: the singlechip is used for carrying out parallel (dynamic) sampling, isolation voltage transformation, rectification filtering and comparison with the regulated reference voltage on the voltage boosted by the full-bridge inverter and booster circuit, and then sending an obtained short circuit detection signal to the switch circuit; and when the single chip microcomputer judges that the short circuit is caused according to the short circuit detection signal, the switching module in the switching circuit is controlled to be switched off.

Specifically, the parallel short circuit detection circuit comprises

The parallel sampling unit: used for carrying out parallel sampling on the full-bridge inversion and boost output end of a boost circuit in the plasma energy output module), and sending sampling voltage obtained by sampling to the next stage;

the comparison unit: and the short circuit detection circuit is used for receiving the sampling voltage sent by the rectifying and filtering unit, comparing the sampling voltage with the regulated reference voltage (adjustable), and then sending a generated short circuit detection signal to the switching circuit to perform short circuit judgment and on-off action.

As shown in fig. 7, the parallel short circuit detection circuit provided by the present embodiment may include a hall voltage sensor T3, a first comparator a1, a tenth resistor R10, an eleventh resistor R11, a twelfth resistor R12, a sixth capacitor C6, a twelfth diode D10, an eleventh diode D11, a second sliding potentiometer RW2, and a second external power source U2, wherein:

two ends of a primary side of the hall voltage sensor T3 are connected to one end of the tenth resistor R10 and one end of the eleventh resistor R11, respectively, the other end of the tenth resistor R10 and the other end of the eleventh resistor R11 are connected to the plasma energy output module as two ends of an input terminal of the parallel short circuit detection circuit, respectively, two ends of a secondary side of the hall voltage sensor T3 are connected to a positive electrode of the twelfth diode D10 and a positive electrode of the eleventh diode D11, respectively, the secondary side of the hall voltage sensor T3 is connected to the second external power supply, a negative electrode of the twelfth diode D10 is connected to a negative electrode of the eleventh diode D11, one end of the twelfth resistor R12, one end of the sixth capacitor C6 and a positive input terminal of the first comparator a1, and a positive electrode of the eleventh diode D11, a positive terminal of the eleventh diode D10, and a positive input terminal of the eleventh diode D35, The other end of the twelfth resistor R12 and the other end of the sixth capacitor C6 are grounded simultaneously, the reverse input end of the first comparator A1 is connected with the sliding tap of the second sliding potentiometer RW2, one end of the resistor of the second sliding potentiometer RW2 is connected with the second external power supply U2, the other end of the resistor of the second sliding potentiometer RW2 is grounded, and the output end of the first comparator A1 serving as the output end of the parallel short-circuit detection circuit is connected with the single chip microcomputer.

It should be noted here that the tenth resistor R10 and the eleventh resistor R11 together form a parallel sampling unit, the twelfth diode D10, the eleventh diode D11, the twelfth resistor R12 and the sixth capacitor C6 together form a rectifying and filtering unit, and the first comparator a1 and the second sliding potentiometer RW2 together form a comparing unit, in a specific operation, the voltage at the reverse input terminal of the first comparator a1 serves as a reference voltage, the reference voltage can be changed by adjusting the sliding tap of the second sliding potentiometer RW2, and the forward input terminal of the first comparator a1 serves as an input voltage related to the short-circuit detection signal.

During specific work, the Hall voltage sensor T3 receives a sampling voltage signal, when the voltage is lower than a set value, the sampling voltage signal is input to the in-phase end of the first comparator A1 after rectification and filtering, and the first comparator A1 outputs low level; when the voltage is higher than the set value, the rectified and filtered voltage is input into the non-inverting terminal of the first comparator A1, and the first comparator A1 outputs a high level.

If the voltage of the equidirectional input end of the first comparator A1 is taken as the reference voltage, when the voltage is higher than the set value, the rectified and filtered voltage is input into the inverting end of the first comparator A1, and the first comparator A1 outputs low level; when the voltage is lower than the set value, the rectified and filtered voltage is input into the inverting terminal of the first comparator A1, and the first comparator A1 outputs a high level. In this embodiment, the first external power source U1 may be 12V (regulated power supply), and the second external power source U2 may be 5V (regulated power supply).

As preferred, the switch circuit that this embodiment provided can also adopt relay type switch module, as shown in fig. 6, relay type switch module includes relay K, triode Q20 and diode D20, triode Q20's emitter ground just with diode D20's positive pole is connected, diode D20's negative pole with triode Q20's collecting electrode is connected, triode Q20's base is passed through resistance R30 and is connected with the singlechip, triode Q20's collecting electrode still with the one end of relay K's coil is connected, 12V external power supply can be connected to the other end of relay K's coil, wherein, relay type switch module's input and output are established ties in the system circuit as relay type switch module respectively at the both ends of relay K switch contact.

Example 2

As shown in fig. 5, this embodiment provides a plasma energy control system, which includes an AC/DC module, a DC control module, a plasma energy output module, and a control panel, and further includes the switch circuit provided in embodiment 1, where the switch circuit is connected in series between the DC control module and the plasma energy output module through the switch module therein.

It should be noted here that, in this embodiment, because the switch circuit is additionally arranged between the DC control module and the plasma energy output module, the output power of the plasma energy output module does not exceed the preset peak power and satisfies the preset power curve by controlling the switch circuit (the duty cycle is changed, so that the output power of the plasma energy control system is always kept within a certain range, and the problems that the instantaneous energy output by the plasma energy control system is weak to excite, the plasma is not easy to continuously generate, the cutting efficiency is low, and the knife sticking and the knife cutting of the scalpel are not sharp are solved.

The plasma energy output module comprises a full-bridge inverter and booster circuit, an impedance matching and output circuit and a second drive control circuit, wherein:

the second drive control circuit: after being isolated, the full-bridge inverter and booster circuit is used for driving the full-bridge inverter and booster circuit (specifically, the grid electrode of the VMOS tube of the full-bridge inverter and booster circuit is driven);

Preferably, the peak power control circuit samples a bus current of a bridge arm bus of the full-bridge inverter and booster circuit through a sampling resistor.

To better illustrate the present embodiment, the AC/DC module in the present embodiment may include an AC input filter circuit, a high voltage rectifying filter circuit, and a low voltage output circuit, wherein:

the alternating current input filter circuit comprises: the high-voltage rectification filter circuit is used for filtering input alternating current and then outputting the filtered alternating current to the high-voltage rectification filter circuit;

the high-voltage rectification filter circuit comprises: the DC control module is used for rectifying and filtering the alternating current input by the alternating current input filter circuit to obtain high-voltage direct current, and then outputting the high-voltage direct current to the low-voltage output circuit and the DC control module;

the low-voltage output circuit: the high-voltage direct current input by the high-voltage rectifying and filtering circuit is isolated and reduced to obtain low-voltage direct current, and then the low-voltage direct current is output to the DC control module, the switch circuit, the plasma energy output module and the control panel.

The DC control module in this embodiment may include a soft-switching full-bridge inverter and buck circuit, a rectification filter output circuit, and a first drive control circuit;

the first drive control circuit: after being isolated, the DC control module is used for driving the full-bridge inversion and voltage reduction circuit, wherein the first driving control circuit drives the grid electrode of the VMOS tube in the soft-switch full-bridge inversion and voltage reduction circuit, and the DC control module can output different voltages according to different types of tool bits;

the soft switch full-bridge inversion and voltage reduction circuit comprises: the rectifier filter output circuit is used for inverting and reducing the high-voltage direct current output by the AC/DC control module and then outputting the obtained voltage to the rectifier filter output circuit;

the rectification filter output circuit: and the soft switch full-bridge inversion and voltage reduction circuit is used for rectifying and filtering the voltage output by the soft switch full-bridge inversion and voltage reduction circuit and then outputting the rectified and filtered voltage to the switch circuit.

It should be noted that only under abnormal conditions, such as insufficient insulation of the cutter head or even short circuit, when the parallel short circuit detection circuit detects a short circuit, the single chip of the switching circuit controls the switching module to be switched off.

In this embodiment, the control panel may include an external interface, an identification control module, an alarm circuit, and a human-computer interaction module, wherein:

the identification control module: the control module is used for identifying and processing surgical knife head information and foot switch information connected with the external interface, generating a first regulation and control signal and then sending the first regulation and control signal to the DC control module and the plasma energy output module simultaneously; the short-circuit detection circuit is also used for receiving and processing the short-circuit signal sent by the switch module to generate an alarm signal and then sending the alarm signal to an alarm circuit; the plasma energy output module is also used for receiving and processing an operator signal sent by the human-computer interaction module, generating a second regulation and control signal, and then sending the second regulation and control signal to the DC control module and the plasma energy output module simultaneously (namely, the process of manually selecting a gear by an operator);

the alarm circuit: the system is used for receiving and alarming the alarm signal sent by the identification control module and sending the alarm signal to the man-machine interaction module for display;

the human-computer interaction module: the alarm circuit is used for receiving and displaying signals sent by the identification control module and the alarm circuit, providing a human-computer interface for an operator and sending related signals input by the operator to the identification control module.

It should be noted that, in this embodiment, interfaces of external devices (such as a foot switch, a scalpel head, and the like) themselves, the external devices, and a display/a touch screen of a control panel themselves are all isolated from the plasma energy control system provided in this embodiment by an isolation circuit, when the parallel short circuit detection circuit performs short circuit detection on the full-bridge inverter and the voltage boost circuit and determines that the full-bridge inverter and the voltage boost circuit are short-circuited, the single chip microcomputer sends a short circuit signal to the identification control module while controlling the switch module to be turned off, and the identification control module controls the alarm circuit to alarm after identifying the short circuit signal, where the alarm circuit may include various alarm forms such as a sound alarm and an audible and visual alarm, and the human-computer interaction module may include a touch screen interaction mode or a common key display interaction module.

It should be noted here that the switch module is provided with an input end, an output end and a switch control input end, the input end and the output end of the switch module are respectively connected with the output end of the DC control module and the input end of the plasma energy output module, that is, the switch module is connected in series in the plasma energy control system, the switch control input end of the switch module is connected with the single chip microcomputer, and receives the switch control signal sent by the single chip microcomputer, the switch module performs an opening or closing action according to the switch control signal, the switch module is opened, the plasma energy output module is opened, the switch module is closed, and the plasma energy output module is closed, that is, the working cycle of the switch module is the working cycle of the plasma energy control system, in other words, the working cycle of the switch module is the working cycle of the plasma energy control system, and the power peak value output by the plasma energy control system does not exceed the preset power peak value and meets the preset power curve. The preset peak power and the preset power curve can be preset in the peak power control circuit and the single chip in advance according to needs.

In the specific implementation of this embodiment, the output voltage of the DC control module has different gears, for example, 10 gears, each gear corresponds to different voltages, the highest gear 10 corresponds to 65V, the other gears decrease with the highest gear in sequence, the output end of the plasma energy output module is the output end of the plasma energy control system (the plasma energy control system includes a control panel, an external interface capable of connecting the surgical knife head and the foot switch is arranged in the control panel, the output end of the plasma energy control system provides plasma output energy for the surgical knife head through the external interface of the control panel), the output end of the plasma energy output module can be connected to surgical knife heads of different models through the external interface of the control panel, the surgical knife head model connected to the output end of the plasma energy control system is different, and the energy required by the surgical knife head is also different, accordingly, the power output by the plasma energy control system needs to meet different peak powers and power curves. The peak power and the power curve corresponding to the surgical knife heads of different models can be set by an operator according to actual needs, for example, when the knife head A is used, the set peak power is 300W, the output power of the plasma energy control system needs to meet the power curve A, the peak power control circuit obtains the sampling current in real time and then amplifies the sampling current to generate a voltage signal and sends the voltage signal to the single chip microcomputer (actually measured is the real-time impedance between two electrodes of the knife head), and the single chip microcomputer can calculate the working period corresponding to the switch module when the peak power 300W and the power curve A are met (namely, different voltage signals correspond to different preset peak powers and preset power curves), so that the switch control signal is generated to control the switch module to be switched on or switched off. For a cutter head of the same model, if 200 ohms is preset as a peak power point, when the measured impedance is greater than 200 ohms, the work cycle of the singlechip control switch module is about 500ms (wherein the off time is about 110 ms), and when the measured impedance is 50 ohms, the work cycle of the singlechip control switch module is about 140ms (wherein the off time is about 110 ms) in order to adapt to a preset power curve, so that the output power of the plasma energy control system is always controlled within a required range. Compared with the prior art, according to the technical scheme, the working period is composed of the off time and the working time, when the preset peak power is unchanged (namely, when the gear is not changed), the off time is kept unchanged), when the measured impedance is lower than the excitation impedance value of the plasma (the plasma can be excited by certain excitation impedance and corresponding excitation voltage, and when the plasma works, the voltage generally can meet the requirement of the excitation voltage), the working period is shortened (namely, the working time is shortened, namely, only the working time is adjusted), the switching module is disconnected, and the switching circuit is charged and stored with energy through the DC control module. This technical scheme can adjust the duty cycle of switch module according to predetermined peak power and predetermined power curve, because when impedance is less than the arouse impedance value of plasma, the switch circuit disconnection energy storage, in certain extent, duty cycle is short, and the burst energy is very strong (instantaneous power grow promptly), can effectively avoid the energy in the twinkling of an eye to arouse weakly, is difficult to produce plasma scheduling problem. Use the surgical system of this embodiment at the operation in-process, it has the tissue to adhere to on the scalpel head, appear gluing the sword phenomenon promptly, the sword impedance changes, if do not solve and glue the sword problem, can seriously influence the operation effect, and this embodiment is because switch circuit disconnection energy storage, the excitation energy time is short in the twinkling of an eye, utilize the plasma of energy production in the twinkling of an eye to beat the tissue that attaches at the tool head, solve fast and glue the sword problem, in addition, because this embodiment can continuously output plasma energy, consequently, it is fast to have the cutting, efficient advantage.

In addition, in the embodiment, the process of the operator manually selecting the selected gear is as follows: after an operator selects working modes such as cutting and hemostasis through the foot switch, each working mode (all having a plurality of energy gears such as 10 gears) is manually selected through the man-machine interaction module, and energy gears can be adjusted. The identification control module is preset with corresponding default gears, generally the best gear, according to different types of cutter heads, an operator can select the required gear through the man-machine interaction module according to the requirement, the gear selection signal is input into the identification control module, and the working state of the working mode is selected through the foot switch (for example, the cutting or hemostasis on or off is selected). If the cutting mode is selected, the foot switch sends a switch signal to the identification control module through the external interface (the hemostatic switch provides the switch signal to the identification control module through another channel), and after the identification control module identifies the switch signal, the identification control module controls a first drive control circuit in the DC control module and a second drive control module in the plasma energy output module (namely, the first drive control circuit and the second drive control module are simultaneously opened, and the switch module in the switch circuit is opened when the DC control module fully charges the DC control module.

On one hand, the identification control module outputs corresponding control voltage to the first drive control circuit according to preset different energy gears, the first drive control circuit drives the soft switch full-bridge inversion and voltage reduction circuit (input into the grid electrode of the VMOS tube) after isolation, and the voltage is input into the rectification filtering output circuit after voltage reduction to control the output voltage (as the input voltage of the switch circuit) of the corresponding gear of the DC control module. An operator can select a corresponding gear according to the human-computer interaction module to manually adjust a preset gear, and then the output voltage of the corresponding gear of the DC control module is adjusted through the working process.

On the other hand, after receiving the switch signal of the foot switch, the identification control module turns on the second driving control circuit, the second driving control circuit is isolated and used for driving the full-bridge inverter and booster circuit (input to the grid of the VMOS transistor in fig. 4), and the voltage is boosted and input to the impedance matching and output circuit to control the energy output of the plasma energy output module. The parallel short-circuit detection circuit samples and processes parallel voltage of the voltage boosted by the full-bridge inverter and the booster circuit to generate a short-circuit detection signal, and then sends the short-circuit detection signal to a single chip microcomputer in the switch circuit, and the single chip microcomputer controls the switch module in the switch circuit to be switched off or switched on according to the short-circuit detection signal. And during normal work, the first drive control circuit and the second drive control circuit are both opened, and are only turned off during abnormal work (for example, the cutter head is judged to be short-circuited or the foot switch is turned off).

The above is only a preferred embodiment of the present invention, and it should be noted that the above preferred embodiment should not be considered as limiting the present invention, and the protection scope of the present invention should be subject to the scope defined by the claims. It will be apparent to those skilled in the art that various modifications and enhancements can be made without departing from the spirit and scope of the invention, and such modifications and enhancements are intended to be within the scope of the invention.

Claims

1. The utility model provides a plasma energy control switch circuit, its characterized in that includes peak power control circuit, singlechip and is used for connecting in series the switch module in plasma energy control system circuit, wherein:

the peak power control circuit: the ground current sampling and filtering device is used for sampling and filtering the dynamic ground current, adjusting the amplification factor of the generated voltage signal so as to adjust the peak power point, and then sending the peak power point to the single chip microcomputer;

the single chip microcomputer: and the power control module is used for processing according to the received voltage signal and controlling the working period of the switch module, so that the output power of the plasma energy control system does not exceed the preset peak power and meets the preset power curve.

2. The plasma energy control switch circuit of claim 1, wherein the switch module comprises a VMOS type switch module or a relay type switch module.

3. The plasma energy control switch circuit of claim 2, wherein the VMOS type switch module comprises a PMOS type switch module or an NMOS type switch module.

4. The plasma energy control switch circuit according to claim 3, wherein the VMOS type switch module comprises an interference rejection unit, an amplification switch unit, a driving switch unit and a switch unit connected in series in a plasma energy control system circuit, wherein:

the drive switch unit: the switch control unit is used for receiving the switch control signal sent by the amplification switch unit and then performing on-off action;

5. The plasma energy control switch circuit of claim 1, wherein the peak power control circuit has different amplification factors for different types of tool bits; for the cutter heads of the same model, the amplification factor after sampling and filtering each time is constant.

6. The plasma energy control switch circuit of claim 1, wherein the peak power control circuit comprises a bus sampling unit, an input filtering unit, an amplification regulating unit and an output unit, wherein:

the bus sampling unit: the ground current sampling module is used for sampling the dynamic ground current of a post-stage circuit of the switch module and sending a sampling signal to the input filtering unit;

7. The plasma energy control switch circuit of claim 1, further comprising a short detection circuit.

8. The plasma energy control switch circuit of claim 7, wherein the short circuit detection circuit is a parallel short circuit detection circuit comprising

Parallel sampling unit: the sampling circuit is used for sampling a post-stage circuit of the switch module in parallel and sending a sampling voltage obtained by sampling to a next stage;

a Hall voltage sensor: the parallel sampling unit is used for receiving the sampling voltage sent by the parallel sampling unit, carrying out isolation processing and then sending the obtained sampling voltage to the next stage;

a rectification filter unit: the Hall voltage sensor is used for receiving the sampling voltage sent by the Hall voltage sensor, carrying out rectification and filtering processing on the sampling voltage and then sending the obtained sampling voltage to the next stage;

a comparison unit: and the short circuit detection circuit is used for receiving the sampling voltage sent by the rectifying and filtering unit, comparing the sampling voltage with the regulated reference voltage, and then sending a generated short circuit detection signal to the single chip microcomputer to perform short circuit judgment and on-off action.

9. The plasma energy control switch circuit of claim 1, wherein the duty cycle of the switch module is comprised of an off-time and an on-time, and the off-time is maintained constant at a predetermined peak power level.

10. A plasma energy control system comprising an AC/DC module, a DC control module, a plasma energy output module and a control panel, further comprising the switching circuit of any one of claims 1 to 9, wherein the switching circuit is connected in series between the DC control module and the plasma energy output module via the internal switching module.