CN211908759U - Bidirectional switch and quick switch - Google Patents
Bidirectional switch and quick switch Download PDFInfo
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- CN211908759U CN211908759U CN202020418259.9U CN202020418259U CN211908759U CN 211908759 U CN211908759 U CN 211908759U CN 202020418259 U CN202020418259 U CN 202020418259U CN 211908759 U CN211908759 U CN 211908759U
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Abstract
The application discloses bidirectional switch and fast switch, bidirectional switch includes: the rectifier bridge unit and the crimping type IGBT unit are arranged; the rectifier bridge unit consists of 4 diode units; the crimping type IGBT unit is formed by a crimping type IGBT, and the crimping type IGBT unit is connected with the rectifier bridge unit in parallel, so that the technical problem that the existing quick switch is high in cost is solved.
Description
Technical Field
The application relates to the technical field of switches, in particular to a bidirectional switch and a quick switch.
Background
With the development of science and technology, a large number of high and new technology enterprise users access to a power grid, the enterprises are precise in production and extremely high in requirement on power quality, and voltage sag is one of serious power quality problems. The sensitive users have great direct production loss and indirect production loss due to the voltage sag problem, and also have serious social influence. The fast switch can provide an economic and effective solution for improving the reliability of power supply, and realizes the uninterrupted power supply of loads, thereby having important significance for the research of the fast switch.
The fast switch is used for fast switching between mutually independent double power supplies, namely, the temporary drop occurs the cutting off of the branch and the closing of the standby branch. The circuit structure of the existing fast switch is shown in fig. 1, and a bidirectional switch is formed by four full-control devices, when the switch is in normal operation, current is supplied to a load through an IGBT1 and an IGBT2 on a main power supply side, and an IGBT3 and an IGBT4 on a standby power supply side are turned off; when the system detects a fault, a turn-off signal is sent to the IGBT1 or the IGBT2, and then the IGBT1 or the IGBT2 is turned off rapidly; at this time, an on signal is sent to the IGBT3 or the IGBT4, and the backup power supply starts supplying power to the load. The fast switch with the structure has good performance but high cost.
SUMMERY OF THE UTILITY MODEL
In view of this, the present application provides a bidirectional switch and a fast switch, which solve the technical problem of high cost of the existing fast switch.
A first aspect of the present application provides a bidirectional switch comprising: the rectifier bridge unit and the crimping type IGBT unit;
the rectifier bridge unit consists of 4 diode units;
the crimping type IGBT unit is composed of a crimping type IGBT, and the crimping type IGBT unit is connected with the rectifier bridge unit in parallel.
Alternatively, the IGBT cell is constituted by a plurality of crimp type IGBTs connected in series.
Optionally, the diode unit includes: a plurality of diodes in series.
A second aspect of the present application provides a fast switch comprising: a power supply unit and a bidirectional switch as described in the first aspect;
the power supply unit is used for providing electric energy for the bidirectional switch.
Optionally, the method further comprises: a first voltage equalizing circuit unit;
the first voltage equalizing circuit unit is connected in parallel with the crimping type IGBT unit.
Optionally, the first voltage equalizing circuit unit includes: the first static voltage-sharing circuit and the first dynamic voltage-sharing circuit;
the first static voltage-sharing circuit and the first dynamic voltage-sharing circuit are connected with the crimping type IGBT unit in parallel.
Optionally, the method further comprises: a second voltage equalizing circuit unit;
the second voltage-sharing circuit unit is connected with the diode unit in parallel.
Optionally, the second voltage-sharing circuit unit includes: the second static voltage-sharing circuit and the second dynamic voltage-sharing circuit;
the second static voltage-sharing circuit and the second dynamic voltage-sharing circuit are both connected with the diode unit in parallel.
Optionally, the power supply unit includes: current source, cable and magnetic loop transformer;
the number of the magnetic ring transformers is the same as that of the crimping type IGBTs, and the magnetic ring transformers are connected with the crimping type IGBTs in a one-to-one correspondence manner;
the current source is connected with the magnetic ring transformer through the cable.
Optionally, the current source comprises: a DC/AC circuit.
According to the technical scheme, the method has the following advantages:
the application provides a bidirectional switch includes: the rectifier bridge unit and the crimping type IGBT unit; the rectifier bridge unit consists of 4 diode units; the crimping type IGBT unit is composed of a crimping type IGBT, and the crimping type IGBT unit is connected with the rectifier bridge unit in parallel. The bidirectional switch in this application comprises diode unit and crimping formula IGBT because the cost of diode is lower, compares in the present mode that adopts crimping formula IGBT to constitute bidirectional switch completely, and bidirectional switch's in this application cost is also lower, and when quick switch adopted this bidirectional switch, the cost was also lower, has solved the higher technical problem of current quick switch cost.
Drawings
FIG. 1 is a schematic diagram of a bidirectional switch in a prior art fast switch;
FIG. 2 is a schematic diagram of a first structure of a bidirectional switch according to an embodiment of the present application;
FIG. 3 is a second structural diagram of a bidirectional switch according to an embodiment of the present application;
FIG. 4 is a schematic structural diagram of a fast switch according to an embodiment of the present application;
FIG. 5 is a schematic structural diagram of a first static voltage equalizing circuit according to an embodiment of the present application;
fig. 6 is a schematic structural diagram of a first dynamic voltage equalizing circuit according to an embodiment of the present application;
fig. 7 is a schematic structural diagram of a second dynamic voltage equalizing circuit according to an embodiment of the present application;
FIG. 8 is a schematic structural diagram of a power supply unit according to an embodiment of the present application;
fig. 9 is a schematic structural diagram of a current source in the embodiment of the present application.
Detailed Description
The embodiment of the application provides a bidirectional switch and a quick switch, and solves the technical problem that the existing quick switch is high in cost.
The technical solutions of the embodiments of the present application will be described clearly and completely with reference to the accompanying drawings, and it is obvious that the described embodiments are some, but not all, of the embodiments of the present application. All other embodiments obtained by a person of ordinary skill in the art based on the embodiments in the present application without any creative effort belong to the protection scope of the embodiments in the present application.
In the description of the embodiments of the present application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience in describing the embodiments of the present application and simplifying the description, but do not indicate or imply that the referred devices or elements must have specific orientations, be configured in specific orientations, and operate, and thus, should not be construed as limiting the embodiments of the present application. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the embodiments of the present application, it should be noted that the terms "mounted," "connected," and "connected" are used broadly and are defined as, for example, a fixed connection, an exchangeable connection, an integrated connection, a mechanical connection, an electrical connection, a direct connection, an indirect connection through an intermediate medium, and a communication between two elements, unless otherwise explicitly stated or limited. Specific meanings of the above terms in the embodiments of the present application can be understood in specific cases by those of ordinary skill in the art.
For ease of understanding, a bidirectional switch provided by the present application is described in detail below.
The first embodiment of the present application provides a bidirectional switch, specifically please refer to fig. 2 and fig. 3.
The bidirectional switch in this embodiment includes: the rectifier bridge unit and the crimping type IGBT unit; the rectifier bridge unit consists of 4 diode units; the crimping type IGBT unit is composed of a crimping type IGBT, and the crimping type IGBT unit is connected with the rectifier bridge unit in parallel.
In view of the above problems in the background art, the bidirectional switch in this embodiment is composed of a diode unit and a crimp IGBT, because the cost of the diode is lower, compared with the existing method of completely adopting the crimp IGBT to form the bidirectional switch, the cost of the bidirectional switch in this application is also lower, when the bidirectional switch is adopted as the fast switch, the cost is also lower, and the technical problem that the cost of the existing fast switch is higher is solved.
The above is a first embodiment of a bidirectional switch provided in the present application, and the following is a second embodiment of a bidirectional switch provided in the present application, specifically referring to fig. 1.
The bidirectional switch in this embodiment includes: the rectifier bridge unit and the crimping type IGBT unit; the rectifier bridge unit consists of 4 diode units; the crimping type IGBT unit is composed of a crimping type IGBT, and the crimping type IGBT unit is connected with the rectifier bridge unit in parallel.
The structure of the crimp IGBT cell may be various, and for example, as shown in fig. 2, a crimp IGBT cell configured by a plurality of crimp IGBTs connected in series may be a crimp IGBT cell configured by a single crimp IGBT as shown in fig. 3.
Specifically, the diode unit structure composing the rectifier bridge unit may be various, such as a diode unit composed of a plurality of diodes connected in series as shown in fig. 2, or a diode unit composed of a single diode as shown in fig. 3.
The bidirectional switch in this embodiment is composed of the diode unit and the crimping type IGBT, because the cost of the diode is lower, compared with the existing mode that the crimping type IGBT is completely adopted to constitute the bidirectional switch, the cost of the bidirectional switch in this application is also lower, when the bidirectional switch is adopted by the fast switch, the cost is also lower, and the technical problem that the cost of the existing fast switch is higher is solved.
The above is a second embodiment of a bidirectional switch provided in the present application, and the following is an embodiment of a fast switch provided in the present application, specifically please refer to fig. 4.
The fast switch in this embodiment includes: a power supply unit and the bidirectional switch of the first or second embodiment; the power supply unit is used for supplying electric energy to the bidirectional switch.
Specifically, in order to improve the stability of the circuit, a first voltage equalizing circuit is further arranged in the bidirectional switch, and the first voltage equalizing circuit is connected with the pressure connection type IGBT unit in parallel.
It is understood that the first voltage equalizing circuit has various structures, and may be a first static voltage equalizing circuit or a first dynamic voltage equalizing circuit, or may be a combination of the first static voltage equalizing circuit and the first dynamic voltage equalizing circuit. When the voltage equalizing circuit is a first static voltage equalizing circuit and a first dynamic voltage equalizing circuit, the first static voltage equalizing circuit and the first dynamic voltage equalizing circuit are both connected with the crimping type IGBT unit in parallel.
Specifically, as shown in fig. 4 and 5, the first static voltage equalizing circuit may be connected in parallel to the resistor Rs of the crimp IGBT, and the following method is adopted for selecting the resistor Rs of the structure:
when the Rs is selected, the IGBT device with the largest leakage current is started, so that the resistance Rs reaches the minimum value, and a good voltage-sharing effect can be achieved. However, since the resistance Rs is too small, the current flowing therethrough is large, and the power consumption in the resistance is also large, it is desirable that the resistance Rs is not too small, and the correct selection should be made in consideration of both the resistance value and the power consumption.
Suppose that n crimping type IGBTs constitute a crimping type IGBT unit, wherein the crimping type IGBTs are: t is1、T2、…、Tn，T1Has a leakage current of ICminThe leakage current of the rest n-1 IGBTs is ICmaxThen, ICmin+I1＝ ICmax+I2＝ICmax+I3＝…＝ICmax+InSimultaneously has U2＝U3＝…＝Un. The most severe case of unbalanced pressure is ICminWhen T is not equal to 0, T is guaranteed1The voltage difference between the IGBT and other series IGBTs is within 10 percent, namely
Converted into a resistance relationship of
Thereby obtaining
Namely, it is
It is understood that, as shown in fig. 4 and fig. 6, the first dynamic voltage equalizing circuit may be an RCD circuit, i.e., a circuit composed of a resistor R, a capacitor C and a diode D, and the RCD circuit is connected in parallel to both sides of the IGBT as shown in fig. 6. When the IGBT is turned off, current flows through the D-C branch circuit, and voltage drop is small, so that the IGBT does not have the overvoltage problem. When the IGBT is switched on, a larger R value can be selected, and overlarge current flowing through the IGBT is avoided.
Specifically, in the present embodiment, in order to ensure a stable circuit structure of the diode unit, the second voltage equalizing circuit unit; the second voltage-sharing circuit unit is connected with the diode unit in parallel. The second voltage equalizing circuit comprises, but is not limited to, a second static voltage equalizing circuit and a second dynamic voltage equalizing circuit; the second static voltage-sharing circuit and the second dynamic voltage-sharing circuit are both connected with the diode unit in parallel.
It will be appreciated that the second static voltage grading circuit may be a resistor Rsd connected in parallel across the diode, as shown in figure 4.
As shown in fig. 4 and 7, the second dynamic voltage equalizing circuit may be an RC circuit connected in parallel to two ends of the diode, that is, a circuit composed of a capacitor Cd and a resistor Rd, where the value of the capacitor Cd is:
wherein N is the number of diodes connected in series; k is a voltage-sharing coefficient, namely the ratio of the average value of the voltage at two ends of the diode element to the maximum value; esIs the DC voltage across the series diode; delta QrrThe difference in charge is recovered for the diode.
Specifically, as shown in fig. 8, the power supply unit in the present embodiment includes: current source, cable and magnetic loop transformer; the number of the magnetic ring transformers is the same as that of the crimping type IGBTs, and the magnetic ring transformers are connected with the crimping type IGBTs in a one-to-one corresponding mode; the current source is connected with the magnetic ring transformer through a cable.
It is understood that the current source includes: a DC/AC circuit.
That is, a high-frequency ac pulse current is sent from a current source (in this embodiment, a high-frequency current source) and flows through a cable, and the current source drives the cable and connects a plurality of magnetic ring transformers in series to supply electric power to a drive circuit for each IGBT. Wherein the high frequency current source employs a DC/AC circuit, as shown in fig. 9. The scheme utilizes a high-frequency power supply to excite the cascaded iron core and the resonance loops, the resonance frequencies of the resonance loops are mutually matched, and each stage of energy can only occupy a small part of the resonance energy. The scheme has the advantages of simple structure and low requirement on the required insulation voltage level between adjacent circuits.
It is understood that the cable may be a high voltage cable, and those skilled in the art can arrange the cable according to actual needs, and the cable is not limited in detail.
According to the idea of the series-connection type alternating current bus, one high-voltage cable can be selected to form the unified primary side of each current transformer, and the high-voltage cable penetrates through the centers of all the current transformer magnetic rings. The secondary side winding of the magnetic ring can be properly wound for several turns, an alternating current power signal is taken out, and the alternating current power signal is rectified, filtered and stabilized to form an isolated driving power supply. It is characterized in that:
(1) high voltage class isolation. Because the high-voltage cable is adopted to transmit power, the isolation voltage between the primary side and the secondary side is ensured to be at least equal to the isolation voltage of the high-voltage insulated cable. The outer insulating layer of the cable with ultrahigh voltage isolation performance can easily reach the high voltage isolation grade of 15kV, so that the isolation voltage between the primary side winding and the secondary side winding of the transformer can reach a quite high grade. Meanwhile, as the optical fiber is adopted to transmit the control signal, the optical fiber has very good electromagnetic interference resistance and high electrical insulation performance, the withstand voltage per meter is 200kV, and the optical fiber is the most ideal material for the high-voltage and low-voltage isolation communication at present, so that the isolation voltage of the control signal can also reach a quite high level.
(2) And (4) a multi-output characteristic. The magnetic ring of the current transformer and the driving module can be integrated to match the installation of devices. The alternating current bus only passes through the magnetic ring, so that the increase and decrease of the number of output circuits are easy to realize; the alternating current bus can pass through all places of the device where the driving power supply is needed, and the driving power supply is convenient to install.
The bidirectional switch in the quick switch in this embodiment is formed by diode unit and crimping formula IGBT, because the cost of diode is lower, compare in the present mode that adopts crimping formula IGBT to constitute bidirectional switch completely, the cost of bidirectional switch in this application is also lower, and when quick switch adopted this bidirectional switch, the cost was also lower, has solved the higher technical problem of current quick switch cost.
The above embodiments are only used for illustrating the technical solutions of the present application, and not for limiting the same; although the present application has been described in detail with reference to the foregoing embodiments, it should be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions in the embodiments of the present application.
Claims (9)
1. A bi-directional switch, comprising: the rectifier bridge unit and the crimping type IGBT unit;
the rectifier bridge unit consists of 4 diode units;
the crimping type IGBT unit is formed by a crimping type IGBT and is connected with the rectifier bridge unit in parallel;
the crimp type IGBT unit is composed of a plurality of crimp type IGBTs connected in series.
2. The bi-directional switch of claim 1, wherein the diode unit comprises: a plurality of diodes in series.
3. A fast switch, comprising: a power supply unit and a bidirectional switch as claimed in claim 1 or 2;
the power supply unit is used for providing electric energy for the bidirectional switch.
4. The fast switch of claim 3, further comprising: a first voltage equalizing circuit unit;
the first voltage equalizing circuit unit is connected in parallel with the crimping type IGBT unit.
5. The fast switch according to claim 4, wherein the first voltage equalizing circuit unit comprises: the first static voltage-sharing circuit and the first dynamic voltage-sharing circuit;
the first static voltage-sharing circuit and the first dynamic voltage-sharing circuit are connected with the crimping type IGBT unit in parallel.
6. The fast switch of claim 3, further comprising: a second voltage equalizing circuit unit;
the second voltage-sharing circuit unit is connected with the diode unit in parallel.
7. The fast switch according to claim 6, wherein the second voltage equalizing circuit unit comprises: the second static voltage-sharing circuit and the second dynamic voltage-sharing circuit;
the second static voltage-sharing circuit and the second dynamic voltage-sharing circuit are both connected with the diode unit in parallel.
8. The fast switch according to claim 3, characterized in that the power supply unit comprises: current source, cable and magnetic loop transformer;
the number of the magnetic ring transformers is the same as that of the crimping type IGBTs, and the magnetic ring transformers are connected with the crimping type IGBTs in a one-to-one correspondence manner;
the current source is connected with the magnetic ring transformer through the cable.
9. The fast switch of claim 8, wherein the current source comprises: a DC/AC circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020418259.9U CN211908759U (en) | 2020-03-27 | 2020-03-27 | Bidirectional switch and quick switch |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020418259.9U CN211908759U (en) | 2020-03-27 | 2020-03-27 | Bidirectional switch and quick switch |
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| Publication Number | Publication Date |
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| CN211908759U true CN211908759U (en) | 2020-11-10 |
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| CN202020418259.9U Active CN211908759U (en) | 2020-03-27 | 2020-03-27 | Bidirectional switch and quick switch |
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