CN211897168U - Silicon core rod and silicon core structure for polycrystalline silicon growth - Google Patents
Silicon core rod and silicon core structure for polycrystalline silicon growth Download PDFInfo
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- CN211897168U CN211897168U CN202022040706.4U CN202022040706U CN211897168U CN 211897168 U CN211897168 U CN 211897168U CN 202022040706 U CN202022040706 U CN 202022040706U CN 211897168 U CN211897168 U CN 211897168U
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Abstract
The utility model discloses a silicon core rod and a silicon core structure for polysilicon growth, which comprises two vertical silicon core rods and a horizontal silicon core rod, wherein the left and right sides of the lower surface of the horizontal silicon core rod are provided with a first slot, the upper parts of the opposite surfaces of the two first slots are connected with a clamping plate, the opposite surfaces of the two vertical silicon core rods are provided with clamping plate grooves matched with the clamping plate, a second slot is communicated with the clamping plate grooves, the opposite surfaces of the two second slots are provided with clamping blocks, the left and right sides of the upper surface of the horizontal silicon core rod are provided with clamping block grooves matched with the clamping blocks, so that the silicon core structure can be conveniently connected without molybdenum wire binding, the molybdenum wire wrapped by polysilicon is not required to be removed, the processing of workers is convenient, the contact between the silicon core structures is stable, and the resistance at the linking part is reduced, the reaction is better carried out, the local overheating condition is avoided, and the rod falling can be effectively prevented.
Description
Technical Field
The utility model relates to a polycrystalline silicon production technical field, the concrete field is a silicon plug and be used for polycrystalline silicon growing's silicon core structure.
Background
High-purity trichlorosilane needs to be reduced by high-purity hydrogen in the production process of polycrystalline silicon, a high-purity silicon core rod is used as a carrier in the reduction process, the high-purity silicon core rod is heated to a reaction temperature, the polycrystalline silicon is generated and deposited in the silicon core rod, a plurality of silicon core rods need to be lapped to form a conductive loop in the production process, but most of the silicon core rods are bound by molybdenum wires at present, so that the silicon core rods are unstable in contact, the resistance between the silicon core rods is easily increased, the current is not easy to pass, the local overheating of the reaction is easily caused, the silicon core rods are easily collapsed, and the reduction reaction cannot be smoothly carried out.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide a silicon plug and be used for silicon core structure of polycrystalline silicon growth to solve the problem that proposes among the above-mentioned background art.
In order to achieve the above object, the utility model provides a following technical scheme: a silicon core rod and a silicon core structure for polycrystalline silicon growth comprise two vertical silicon core rods and two horizontal silicon core rods, wherein the left side and the right side of the lower surface of each horizontal silicon core rod are provided with a first groove, the upper parts of the surfaces, opposite to each other, of the first grooves are connected with clamping plates, the surfaces, opposite to the vertical silicon core rods, of the two vertical silicon core rods are provided with clamping plate grooves matched with the clamping plates, the two clamping plates are clamped in the corresponding clamping plate grooves respectively, the upper parts, opposite to the vertical silicon core rods, of the surfaces are provided with second grooves, the second grooves are communicated with the clamping plate grooves, the length of the second grooves is smaller than that of the clamping plate grooves, the surfaces, opposite to the second grooves, of the two vertical silicon core rods are provided with clamping block grooves matched with the clamping blocks, and the clamping blocks are clamped in the corresponding clamping block grooves.
Preferably, the lower ends of the two vertical silicon core rods are connected with circular base plates.
Preferably, the outer surface of the vertical silicon core rod is uniformly provided with arc-shaped grooves.
Preferably, the width of the lower part of the vertical silicon core rod is larger than that of the upper part of the vertical silicon core rod.
Preferably, the upper surfaces of the two vertical silicon core rods and the upper surface of the transverse silicon core rod are arranged on the same horizontal plane.
Preferably, two clamping blocks are arranged on each second slot, and the two clamping blocks are symmetrically arranged in the front and back direction.
Compared with the prior art, the beneficial effects of the utility model are that: the utility model provides a silicon core stick and be used for silicon core structure of polycrystalline silicon growth, the cardboard through horizontal silicon core stick both sides is blocked respectively and is corresponded the cardboard inslot that erects the silicon core stick, make horizontal silicon core stick can not rock from top to bottom, the fixture block on the perpendicular silicon core stick is blocked respectively and is corresponded the cardboard inslot on the horizontal silicon core stick, make horizontal silicon core stick can not rock from front to back, finally cross between silicon core stick and two perpendicular silicon core sticks zonulae occludens, can make the connection of silicon core structure very convenient, and need not to use molybdenum filament to tie up, just needn't get rid of the molybdenum filament that the polycrystalline silicon is wrapped up, make things convenient for staff's processing, and make the contact between the silicon core structure very stable, be favorable to reducing the resistance of linking department, make the better going on of reaction, both avoid local overheated condition to take place, can effectively prevent the emergence of the stick.
Drawings
Fig. 1 is a front view of the present invention;
fig. 2 is a top view of the present invention;
FIG. 3 is a front view of the vertical silicon core rod of the present invention;
FIG. 4 is a top view of the vertical silicon core rod of the present invention;
FIG. 5 is a front view of the internal structure of the horizontal silicon mandrel of the present invention;
fig. 6 is a plan view of the horizontal silicon core rod of the present invention.
In the figure: 1-vertical silicon core rod, 2-horizontal silicon core rod, 3-slotted I, 4-clamping plate, 5-clamping plate groove, 6-slotted II, 7-clamping block, 8-clamping block groove, 9-circular base plate and 10-arc groove.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
Referring to fig. 1-6, the present invention provides a technical solution: a silicon core rod and a silicon core structure for polycrystalline silicon growth comprise two vertical silicon core rods 1 and a horizontal silicon core rod 2, wherein the left side and the right side of the lower surface of the horizontal silicon core rod 2 are respectively provided with a first open groove 3, the left open groove 3 penetrates through the lower surface, the front surface, the rear surface and the left surface of the horizontal silicon core rod 2, the right open groove 3 penetrates through the lower surface, the front surface, the rear surface and the right surface of the horizontal silicon core rod 2, the upper parts of the surfaces, opposite to the first open grooves 3, of the two vertical silicon core rods 1 are respectively provided with a clamping plate groove 5 matched with the clamping plate 4, the clamping plate 4 and the horizontal silicon core rod 2 are of an integrated forming structure and are made of the same material, the two clamping plates 4 are respectively clamped in the corresponding clamping plate grooves 5, the upper parts of the surfaces, opposite to the two vertical silicon core rods 1, the left open groove two 6 penetrate through the upper surface of the vertical silicon core rod 1, The silicon core rod comprises a front surface, a rear surface and a right surface, a second groove 6 on the right side penetrates through the upper surface, the front surface, the rear surface and the left surface of the vertical silicon core rod 1, the second groove 6 is communicated with the clamping plate groove 5, the length of the second groove 6 is smaller than that of the clamping plate groove 5, the clamping plate 4 can be clamped in the clamping plate groove 5 and fixed, the clamping plate 4 cannot be separated from the second groove 6, clamping blocks 7 are arranged on the surfaces, opposite to the two second grooves 6, of the two grooves, clamping block grooves 8 matched with the clamping blocks 7 in use are formed in the left side and the right side of the upper surface of the transverse silicon core rod 2, the clamping blocks 7 are clamped in the corresponding clamping block grooves 8, and the clamping blocks 7 and the vertical silicon core rod 1 are of an integrally formed structure and are made of.
When the silicon core structure is connected, the horizontal silicon core rod 2 is clamped between the two vertical silicon core rods 1, the clamping plates 4 at two sides of the horizontal silicon core rod 2 are clamped in the clamping plate grooves 5 on the corresponding vertical silicon core rods 1 at the moment, so that the upper side and the lower side of the horizontal silicon core rod 2 are clamped, the vertical silicon core rod 2 is prevented from shaking up and down, the clamping blocks 7 on the vertical silicon core rods 1 are clamped in the clamping block grooves 8 on the corresponding horizontal silicon core rods 2, the front side and the rear side of the horizontal silicon core rod 2 are clamped, the horizontal silicon core rod 2 is prevented from shaking back and forth, finally the horizontal silicon core rod 2 is stably connected between the two vertical silicon core rods 1, the silicon core structures are connected with each other in a clamping way to be more stable, the connection between the silicon core structures is easy to cause unstable connection by using a connection way of molybdenum wires, the falling of the silicon core rods occurs, the connection place resistance is increased due to unstable contact, the local overheating situation occurs, and the silicon core structure does not need to be bound with the molybdenum, when the polycrystalline silicon is generated, the molybdenum wire is not wrapped in the polycrystalline silicon, and when workers handle the generated polycrystalline silicon, the parts containing the molybdenum wire in the polycrystalline silicon do not need to be treated additionally, so that the polycrystalline silicon is very convenient.
Specifically, the lower ends of the two vertical silicon core rods 1 are connected with circular base plates 9, the circular base plates 9 and the vertical silicon core rods 1 are integrally formed and made of the same material, and the circular base plates 9 can increase the contact area between the vertical silicon core rods 1 and the inner wall of the reduction furnace, so that the silicon core structure can be more stably positioned in the reduction furnace for reaction.
Specifically, arc-shaped grooves 10 are uniformly formed in the outer surface of the vertical silicon core rod 1, and the arc-shaped grooves 10 increase the reaction area of the vertical silicon core rod 1, so that polycrystalline silicon can be generated and deposited more efficiently and rapidly.
Specifically, the width of the lower part of the vertical silicon core rod 1 is greater than the width of the upper part of the vertical silicon core rod 1, so that the weight of the lower side of the vertical silicon core rod 1 is heavier, the gravity center of the vertical silicon core rod 1 is shifted downwards, when the reduction reaction is carried out, the silicon core structure becomes thicker due to the reaction, and the vertical silicon core rod 1 can still be stably positioned in the reduction furnace, thereby avoiding the occurrence of rod falling.
Specifically, the upper surfaces of the two vertical silicon core rods 1 and the upper surfaces of the horizontal silicon core rods 2 are arranged on the same horizontal plane, so that the vertical silicon core rods 1 and the horizontal silicon core rods 2 are stably and uniformly contacted, and uniform deposition of polycrystalline silicon on the silicon core structure is facilitated.
Particularly, every all be equipped with two on the fluting two 6 fixture block 7, and two the symmetrical setting in front and back of fixture block 7 makes the joint between horizontal silicon core stick 2 and the perpendicular silicon core stick 1 more stable, is favorable to going on of reaction, avoids falling the condition emergence of stick.
The working principle is as follows: when the utility model is used, two sides of a horizontal silicon core rod 2 are respectively inserted between the upper parts of two vertical silicon core rods 1, the clamping plates 4 on two sides of the horizontal silicon core rod 2 are respectively clamped in the clamping plate grooves 5 of the corresponding vertical silicon core rods 1, so that the vertical direction of the horizontal silicon core rod 2 is limited, the horizontal silicon core rod 2 can not shake up and down, meanwhile, the clamping blocks 7 on the two vertical silicon core rods 1 can be clamped in the clamping block grooves 8 on the corresponding horizontal silicon core rods 2, the horizontal silicon core rod 2 can not shake back and forth, in sum, the horizontal silicon core rod 2 is stably connected between the two vertical silicon core rods 1, the clamping is tight, molybdenum wire binding is not needed, the contact between the vertical silicon core rods 1 and the horizontal silicon core rods 2 is more stable, the resistance is reduced, the smooth proceeding of the reaction is facilitated, the phenomenon of local overheating is prevented, a plurality of arc-shaped grooves 10 are arranged on the outer surface of the vertical silicon core rods 1, the reaction area is increased, the polycrystalline silicon can be generated and deposited more efficiently, the width of the lower part of the vertical silicon core rod 1 is wider, and the lower end of the vertical silicon core rod is connected with the circular base plate 9, so that the connected silicon core structure is more stable, and the condition of rod falling is prevented.
In the description of the present invention, unless expressly stated or limited otherwise, the terms "mounted," "connected," and "fixed" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral part; can be mechanically or electrically connected; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meaning of the above terms in the present invention can be understood in specific cases to those skilled in the art.
The utility model discloses the standard part that uses all can purchase from the market, and dysmorphism piece all can be customized according to the record of description and attached drawing, and the concrete connection mode of each part all adopts conventional means such as ripe bolt, rivet, welding among the prior art, and machinery, part and equipment all adopt prior art, and conventional model is including the conventional connected mode of circuit connection adoption conventional among the prior art, and here detailed description is not again.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (6)
1. The utility model provides a silicon core stick and be used for silicon core structure of polycrystalline silicon growth, includes two perpendicular silicon core sticks (1) and horizontal silicon core stick (2), its characterized in that: the left side and the right side of the lower surface of the transverse silicon core rod (2) are respectively provided with a first open groove (3), the upper parts of the opposite surfaces of the two first open grooves (3) are connected with clamping plates (4), the opposite surfaces of the two vertical silicon core rods (1) are respectively provided with a clamping plate groove (5) matched with the clamping plates (4) for use, the two clamping plates (4) are respectively clamped in the corresponding clamping plate grooves (5), the upper parts of the opposite surfaces of the two vertical silicon core rods (1) are respectively provided with a second open groove (6), the second open grooves (6) are communicated with the clamping plate grooves (5), the length of the second open grooves (6) is smaller than that of the clamping plate grooves (5), the opposite surfaces of the two second open grooves (6) are provided with clamping blocks (7), the left side and the right side of the upper surface of the transverse silicon core rod (2) are respectively provided with clamping block grooves (8) matched with the clamping blocks, and the clamping blocks (7) are clamped in the corresponding clamping block grooves (8).
2. The silicon seed rod and the silicon seed structure for the growth of polysilicon as claimed in claim 1, wherein: the lower ends of the two vertical silicon core rods (1) are connected with circular base plates (9).
3. The silicon seed rod and the silicon seed structure for the growth of polysilicon as claimed in claim 1, wherein: the outer surface of the vertical silicon core rod (1) is uniformly provided with arc-shaped grooves (10).
4. The silicon seed rod and the silicon seed structure for the growth of polysilicon as claimed in claim 1, wherein: the width of the lower part of the vertical silicon core rod (1) is larger than that of the upper part of the vertical silicon core rod (1).
5. The silicon seed rod and the silicon seed structure for the growth of polysilicon as claimed in claim 1, wherein: the upper surfaces of the two vertical silicon core rods (1) and the upper surfaces of the transverse silicon core rods (2) are arranged on the same horizontal plane.
6. The silicon seed rod and the silicon seed structure for the growth of polysilicon as claimed in claim 1, wherein: two clamping blocks (7) are arranged on each second groove (6), and the two clamping blocks (7) are symmetrically arranged in the front and back directions.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022040706.4U CN211897168U (en) | 2020-09-17 | 2020-09-17 | Silicon core rod and silicon core structure for polycrystalline silicon growth |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202022040706.4U CN211897168U (en) | 2020-09-17 | 2020-09-17 | Silicon core rod and silicon core structure for polycrystalline silicon growth |
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| CN211897168U true CN211897168U (en) | 2020-11-10 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114132931A (en) * | 2021-12-17 | 2022-03-04 | 亚洲硅业(青海)股份有限公司 | Silicon core preparation device and method for polycrystalline silicon production |
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- 2020-09-17 CN CN202022040706.4U patent/CN211897168U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114132931A (en) * | 2021-12-17 | 2022-03-04 | 亚洲硅业(青海)股份有限公司 | Silicon core preparation device and method for polycrystalline silicon production |
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