CN211868872U

CN211868872U - Positive halftone suitable for large-size silicon chip

Info

Publication number: CN211868872U
Application number: CN201922387761.8U
Authority: CN
Inventors: 孙立强; 林纲正; 陈刚
Original assignee: Zhejiang Aiko Solar Energy Technology Co Ltd
Current assignee: Zhejiang Aiko Solar Energy Technology Co Ltd
Priority date: 2019-12-26
Filing date: 2019-12-26
Publication date: 2020-11-06
Anticipated expiration: 2029-12-26

Abstract

The utility model relates to an anodal half tone suitable for jumbo size silicon chip. It includes gauze and photosensitive resist on it, still is equipped with a plurality of bar regions that do not have photosensitive resist on the gauze, establishes to printing line, its characterized in that: the central weaving area is connected with a rectangular second weaving area, a third weaving area connected with the second weaving area is woven on the outer sides of four vertexes of the first weaving area, the first weaving area is formed by weaving main weaving lines with thin line diameters, the second weaving area is formed by mixing and weaving main weaving lines and auxiliary weaving lines with thick line diameters, the third weaving area is formed by weaving auxiliary weaving lines with thick line diameters, and the three weaving areas are in the mesh number relationship that the first weaving area is larger than the second weaving area and larger than the third weaving area.

Description

Positive halftone suitable for large-size silicon chip

Technical Field

The utility model relates to a silicon cell half tone especially relates to an anodal half tone suitable for jumbo size silicon chip.

Background

In the production of silicon wafers in solar panels, circuits need to be printed on the front surface, and the printed circuits need to use a screen printing plate. The principle of a general printed circuit is: and horizontally fixing the screen printing plate right above the silicon chip, arranging a small distance between the screen printing plate and the silicon chip, then pouring slurry on the screen printing plate, and then scraping with glue.

The screen printing plate is composed of main raw materials such as an aluminum frame, screen cloth, photosensitive resist, film and the like, wherein the aluminum frame is determined according to printing equipment and the size of a graph; the film is used as a medium to transfer patterns, and mesh number/line diameter and yarn thickness of the screen are determined by the screen cloth; the thickness of the photosensitive resist is controlled. The existing screen printing plate is basically suitable for 156mm silicon chips, the power requirement on a battery plate is higher and higher, and the size of the silicon chip is larger and larger. The problems of distorted printing patterns, inconsistent overprinting of heavily doped regions, poor printing quality, low service life of the screen printing plate and the like caused by uneven use tension of the conventional screen printing plate can occur.

Disclosure of Invention

The utility model provides an unevenly woven positive screen suitable for large-size silicon wafers; the problem of have the tension inhomogeneous and lead to the distortion of printing figure among the prior art is solved.

The above technical problem of the present invention can be solved by the following technical solutions: the utility model provides an anodal half tone suitable for jumbo size silicon chip, includes gauze and the photosensitive resist on it, still is equipped with a plurality of bar regions that do not have the photosensitive resist on the gauze, establishes to printing line, its characterized in that: the middle of the screen gauze is a rectangular first weaving area, four sides of the first weaving area are connected with a rectangular second weaving area, a third weaving area connected with the second weaving area is woven outside four vertexes of the first weaving area, the first weaving area is formed by weaving main weaving lines with thin line diameters, the second weaving area is formed by mixed weaving of the main weaving lines and auxiliary weaving lines with thick line diameters, the third weaving area is formed by weaving the auxiliary weaving lines with thick line diameters, the three weaving areas have the weaving mesh number relationship that the first weaving area is larger than the second weaving area and larger than the third weaving area, and the weaving mesh number is 1cm²The number of inner meshes.

The utility model discloses a tension control is 18 ~ 22N, main braided wire and vice braided wire are the stainless steel wire generally, main braided wire is thin, vice braided wire is thick, three kinds weave regional mesh number size relations for first weaving region > the second weave region > the third weave the region simultaneously, weave the aperture ratio of mesh number and braided wire thickness common decision gauze, what print the thick liquids promptly is accessible hole accounts for the ratio, weave the mesh number higher and the braided wire is thin more, the aperture ratio is high more, thick liquids trafficability characteristic is strong more. Therefore, in actual use, the first knitting area is the actual printing area, and the printing quality of the area is the best.

The half tone needs to be scraped by the gluey knife in the use, therefore the gauze on the half tone can produce elastic deformation, and the clearance between the gauze can increase, and the gauze clearance that is closer to the marginal zone increases more greatly.

Preferably, since the deformation amplitude of the three regions is first weaving region < second weaving region < third weaving region, the printed line width is provided with d1, d2 and d3 respectively corresponding to the line widths in the first weaving region, the second weaving region and the third weaving region, wherein the line widths of d1 < d2 < d3, d1, d2 and d3 are gradually transited, so that the actual printed line width of each region tends to be the same.

Preferably, the deformation amplitude of the three regions is that the first weaving region is less than the second weaving region and less than the third weaving region, the thickness of the photosensitive resist is gradually changed, and the thickness relation of the photosensitive resist in each region is as follows: the first weaving area < the second weaving area < the third weaving area, so that the thicknesses of the photosensitive emulsion in all the areas in the printing process tend to be the same.

The applicable silicon chip size of this half tone is 180 ~ 220 mm.

D1 is 22-25 um, d3 is 24-27 um, and d2 is between the two.

The photosensitive resist thickness of the first woven region is 10-12 um, the photosensitive resist thickness of the third woven region is 12-14 um, and the photosensitive resist thickness of the second woven region is between the two.

Therefore, compared with the prior art, the utility model has the following characteristics: 1. the knitting yarns with the small wire diameter and the thick wire diameter are adopted for mixed knitting, the gauze is divided into a first knitting area, a second knitting area and a third knitting area, and the consistency of the printing quality of each area of the screen surface is improved.

Drawings

FIG. 1 is a schematic structural diagram of the present invention;

FIG. 2 is a schematic view of the construction of a gauze;

figure 3 is a cross-sectional view of a first knitted region.

Detailed Description

The technical solution of the present invention is further specifically described below by way of examples and with reference to the accompanying drawings.

Example 1: referring to fig. 1, 2 and 3, the positive screen printing plate suitable for large-size silicon wafers comprises a screen gauze and photosensitive adhesives 1 thereon, wherein the screen gauze is also provided with a plurality of printing lines 11, a square first weaving area 2 is arranged in the middle of the screen gauze, four sides of the first weaving area 2 are connected with rectangular second weaving areas 3, a third weaving area 4 connected with the second weaving area 3 is woven outside four vertexes of the first weaving area 2, the first weaving area 2 is formed by weaving main weaving lines 5 with thin wire diameters, the second weaving area 3 is formed by mixed weaving of the main weaving lines 5 and auxiliary weaving lines 6 with thick wire diameters, the third weaving area 4 is formed by weaving the auxiliary weaving lines 6 with thick wire diameters, the three weaving areas have the weaving mesh number of the first weaving area 2, the second weaving area 3 and the third weaving area 4, and the weaving mesh number of the three weaving areas is 1cm²The number of the inner meshes and the matching of the diameters of the main braided wire and the auxiliary braided wire can be as follows: 11um and 13um, 11um and 14um, 13um and 16um, the mesh number in first weaving region can be 430 ~ 480, and the mesh number in third weaving region can be 360 ~ 430.

Since the deformation amplitude of the three regions is first weaving region < second weaving region < third weaving region, the printed line 11 line width is provided with d1, d2 and d3, corresponding to the line width in the first weaving region 2, second weaving region 3 and third weaving region 4, respectively, where d1=22um, d2=23um, d3=24 um.

The thickness of photosensitive resist 1 is the gradual change setting, and first 1 thickness of photosensitive resist of weaving region 2 is 10um, and the third 1 thickness of photosensitive resist of weaving region 4 is 12um, and the second is woven regional 4 photosensitive resist thickness and is 11 um.

The invention may be modified in many ways which will be obvious to a person skilled in the art, and such modifications are not to be considered as a departure from the scope of the invention. All such modifications as would be obvious to one skilled in the art are intended to be included within the scope of this claim.

Claims

1. The utility model provides an anodal half tone suitable for jumbo size silicon chip, includes gauze and photosensitive resist (1) on it, still is equipped with a plurality of printing lines (11) on the gauze, its characterized in that: the novel net gauze is characterized in that a first knitting area (2) is rectangular in the middle of the net gauze, four sides of the first knitting area (2) are connected with a second knitting area (3) which is rectangular, a third knitting area (4) connected with the second knitting area (3) is knitted on the outer sides of four vertexes of the first knitting area (2), the first knitting area (2) is formed by knitting main knitting lines (5) with thin line diameters, the second knitting area (3) is formed by mixed knitting of the main knitting lines (5) and auxiliary knitting lines (6) with thick line diameters, the third knitting area (4) is formed by knitting auxiliary knitting lines (6) with thick line diameters, and the mesh number of the three knitting areas is that the first knitting area (2) > the second knitting area (3) > the third knitting area (4).

2. The positive electrode screen printing plate suitable for large-size silicon wafers as claimed in claim 1, wherein: the line width of the printing line (11) is provided with d1, d2 and d3 which respectively correspond to the line widths in the first weaving area (2), the second weaving area (3) and the third weaving area (4), wherein d1 is more than d2 and more than d 3.

3. The positive electrode screen printing plate suitable for large-size silicon wafers as claimed in claim 1 or 2, wherein: the thickness of the photosensitive emulsion (1) is gradually changed, and the thickness relation of the photosensitive emulsion (1) in each area is as follows: the first knitting area (2) < the second knitting area (3) < the third knitting area (4).

4. The positive electrode screen printing plate suitable for large-size silicon wafers as claimed in claim 1, wherein: the applicable silicon chip size of this half tone is 180 ~ 220 mm.

5. The positive electrode screen printing plate suitable for large-size silicon wafers as claimed in claim 2, wherein: d1 is 22 ~ 25um, d3 is 24 ~ 27 um.

6. The positive electrode screen printing plate suitable for large-size silicon wafers as claimed in claim 3, wherein: the thickness of the photosensitive resist (1) in the first weaving area (2) is 10-12 um, and the thickness of the photosensitive resist (1) in the third weaving area (4) is 12-14 um.