CN211828682U - Wet oxidation device for semiconductor manufacturing - Google Patents
Wet oxidation device for semiconductor manufacturing Download PDFInfo
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- CN211828682U CN211828682U CN202020611027.5U CN202020611027U CN211828682U CN 211828682 U CN211828682 U CN 211828682U CN 202020611027 U CN202020611027 U CN 202020611027U CN 211828682 U CN211828682 U CN 211828682U
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- deionized water
- pipe
- diffusion furnace
- nitrogen
- oxygen
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Abstract
The utility model belongs to the technical field of semiconductor manufacturing, a semiconductor manufacturing is with wet process oxidation unit is related to. Including diffusion furnace and aqueous vapor supply line, aqueous vapor supply line includes the oxygen therapy pipe of being connected with the oxygen source, the defeated nitrogen pipe of being connected with the nitrogen source, the deionized water conveyer pipe of being connected with the deionized water source, be provided with ooff valve and flow control valve on oxygen therapy pipe and the defeated nitrogen pipe, be equipped with ooff valve and water pump on the deionized water conveyer pipe, oxygen therapy pipe and defeated nitrogen union coupling are in the air inlet of diffusion furnace, the deionized water conveyer pipe stretches into in the furnace of diffusion furnace. Compare in current wet process steam oxidation equipment, the utility model discloses a deionized water directly carries to get into the diffusion furnace and vaporizes, can guarantee the stability of deionized water steam supply volume to guarantee that oxide layer growth rate is stable on the semiconductor components and parts, the uniformity is better, has simplified equipment structure simultaneously, the cost is reduced to the potential safety hazard of personnel's operation process emergence scald has been stopped.
Description
Technical Field
The utility model belongs to the technical field of semiconductor manufacturing, a semiconductor manufacturing is with wet process oxidation unit is related to.
Background
The wet-process water vapor oxidation is an indispensable process for a semiconductor manufacturing process, the existing wet-process water vapor oxidation equipment uses an electric furnace to heat deionized water to form deionized water vapor, oxygen is conveyed into the electric furnace to be heated and mixed with the deionized water vapor, and then the oxygen is input into a diffusion furnace to grow an oxide layer on a semiconductor device; because the formation of deionized water vapour in the electric stove heating is influenced by heating temperature, deionized water volume and manual operation, and deionized water vapour formation is unstable, consequently leads to the steam supply volume in the diffusion furnace unstable, causes semiconductor components and parts oxide layer growth rate unstable, uniformity, repeatability are poor, and simultaneously, the personnel scald can take place sometimes in manual operation electric stove heating process, has certain potential safety hazard.
SUMMERY OF THE UTILITY MODEL
The utility model aims at providing a controllable for semiconductor manufacture wet process oxidation unit of steam to the problem that prior art exists.
The utility model discloses a concrete technical scheme as follows:
a wet oxidation device for semiconductor manufacturing comprises a diffusion furnace and a water gas supply pipeline, and is characterized in that: the water and gas supply pipeline comprises an oxygen conveying pipe connected with an oxygen source, a nitrogen conveying pipe connected with a nitrogen source and a deionized water conveying pipe connected with a deionized water source, wherein switch valves and flow control valves are arranged on the oxygen conveying pipe and the nitrogen conveying pipe, a switch valve and a water pump are arranged on the deionized water conveying pipe, the oxygen conveying pipe and the nitrogen conveying pipe are connected with an air inlet of the diffusion furnace, and the deionized water conveying pipe extends into a hearth of the diffusion furnace;
furthermore, flowmeters are arranged on the oxygen conveying pipe, the nitrogen conveying pipe and the deionized water conveying pipe and are used for monitoring flow values of nitrogen, oxygen and deionized water;
preferably, the water pump is a metering peristaltic pump, and the input flow of the deionized water can be accurately set;
preferably, the switch valve is an electromagnetic switch valve, and electric control of the nitrogen, oxygen and deionized water conveying process is realized.
The utility model discloses following beneficial effect has:
compare in current wet process steam oxidation equipment, the utility model discloses a deionized water directly carries to get into the diffusion furnace and vaporizes, can guarantee the stability of deionized water steam supply volume to guarantee that oxide layer growth rate is stable on the semiconductor components and parts, the uniformity is better, has simplified equipment structure simultaneously, the cost is reduced to the potential safety hazard of personnel's operation process emergence scald has been stopped.
Drawings
Fig. 1 is a schematic structural diagram of the present invention.
Detailed Description
The wet oxidation device for manufacturing the semiconductor comprises a diffusion furnace 1 and a water gas supply pipeline, wherein the water gas supply pipeline comprises an oxygen conveying pipe 2 connected with an oxygen source, a nitrogen conveying pipe 3 connected with a nitrogen source and a deionized water conveying pipe 4 connected with a deionized water source, the oxygen conveying pipe 2 and the nitrogen conveying pipe 3 are provided with a switch valve 5 and a flow control valve 6, the deionized water conveying pipe 4 is provided with a switch valve 5 and a water pump 8, the oxygen conveying pipe 2 and the nitrogen conveying pipe 3 are connected with an air inlet of the diffusion furnace 1, the deionized water conveying pipe 4 extends into a hearth of the diffusion furnace 1, and the oxygen conveying pipe 2, the nitrogen conveying pipe 3 and the deionized water conveying pipe 4 are provided with flow meters 7; the water pump 8 is a metering peristaltic pump, and the switch valve 5 is an electromagnetic switch valve.
The utility model discloses a concrete working process as follows:
the oxygen conveying pipe 2, the nitrogen conveying pipe 3 and the switch valve 5 on the deionized water conveying pipe 4 are opened, the conveying flow of the flow control valve 6 and the metering type peristaltic pump are adjusted and set according to the requirements of the oxidation process, the metering type peristaltic pump is started, deionized water is directly conveyed into the hearth of the diffusion furnace 1 through the deionized water conveying pipe 4, the deionized water is instantly vaporized and converted into deionized water vapor after contacting a high-temperature hearth in the diffusion furnace 1, meanwhile, the oxygen conveying pipe 2 and the nitrogen conveying pipe 3 convey nitrogen and oxygen into the hearth through the air inlet of the diffusion furnace 1, the nitrogen and the oxygen are mixed with the ionized water vapor in the hearth of the diffusion furnace 1, and the oxidation diffusion operation is directly carried out on a semiconductor component; because the utility model discloses a deionized water directly carries and carries out evaporating again in getting into diffusion furnace 1, consequently can guarantee that the quantity of ionic water steam is invariable in the diffusion furnace 1 to guarantee that oxide layer growth rate is stable on the semiconductor components and parts, the uniformity is better, and deionized water passes through metering type peristaltic pump and carries, can guarantee the settlement of conveying capacity and the stability of carrying.
Claims (4)
1. A wet oxidation apparatus for semiconductor manufacturing, comprising a diffusion furnace (1) and a water gas supply line, characterized in that: the aqueous vapor supply line includes oxygen therapy pipe (2) of being connected with the oxygen source, defeated nitrogen pipe (3) of being connected with the nitrogen source, deionized water conveyer pipe (4) of being connected with the deionized water source, be provided with ooff valve (5) and flow control valve (6) on oxygen therapy pipe (2) and defeated nitrogen pipe (3), be equipped with ooff valve (5) and water pump (8) on deionized water conveyer pipe (4), oxygen therapy pipe (2) and defeated nitrogen pipe (3) are connected in the air inlet of diffusion furnace (1), deionized water conveyer pipe (4) stretch into in the furnace of diffusion furnace (1).
2. The wet oxidation apparatus for manufacturing a semiconductor as claimed in claim 1, wherein: and flowmeters (7) are arranged on the oxygen conveying pipe (2), the nitrogen conveying pipe (3) and the deionized water conveying pipe (4).
3. The wet oxidation apparatus for manufacturing a semiconductor as claimed in claim 1, wherein: the water pump (8) is a metering peristaltic pump.
4. The wet oxidation apparatus for manufacturing a semiconductor as claimed in claim 1, wherein: the switch valve (5) is an electromagnetic switch valve.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020611027.5U CN211828682U (en) | 2020-04-22 | 2020-04-22 | Wet oxidation device for semiconductor manufacturing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020611027.5U CN211828682U (en) | 2020-04-22 | 2020-04-22 | Wet oxidation device for semiconductor manufacturing |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN211828682U true CN211828682U (en) | 2020-10-30 |
Family
ID=73143322
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202020611027.5U Active CN211828682U (en) | 2020-04-22 | 2020-04-22 | Wet oxidation device for semiconductor manufacturing |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN211828682U (en) |
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2020
- 2020-04-22 CN CN202020611027.5U patent/CN211828682U/en active Active
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