CN211785230U - Monochromatic X-ray single crystal/oriented crystal stress measuring system - Google Patents
Monochromatic X-ray single crystal/oriented crystal stress measuring system Download PDFInfo
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- CN211785230U CN211785230U CN201921594734.1U CN201921594734U CN211785230U CN 211785230 U CN211785230 U CN 211785230U CN 201921594734 U CN201921594734 U CN 201921594734U CN 211785230 U CN211785230 U CN 211785230U
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Abstract
The utility model discloses a monochromatic X ray's single crystal/directional brilliant stress measurement system, among the measurement system, multiaxis sample platform includes along the X degree of freedom of X axle translation, along the Y degree of freedom of Y axle translation, along the Z degree of freedom of Z axle translation, around the rotatory degree of freedom of Z axle and around the X axle and/or the degree of freedom that verts of verting of Y axle, and concentric high adjustment module makes the sample surface be located concentric high position based on sample surface position, concentric high position is multiaxis sample platform rotatory and vert the in-process position that does not change height and for X ray generator and detector rotatory centre of a circle position in the plane, and collection module gathers the diffraction peak signal, and calculation module generates stress data based on the diffraction peak signal.
Description
Technical Field
The utility model belongs to the technical field of the single crystal measurement, especially a monochromatic X ray's single crystal/directional brilliant stress measurement system.
Background
The single crystal blade is used as a key part in a gas turbine and an aircraft engine, and has excellent mechanical property, high-temperature creep resistance and oxidation resistance. Some residual stress is inevitably generated in the processing and production process of the single crystal blade, and the existence of the residual stress influences the service life of the blade. In addition, during the service process, due to the use under long-term extreme working conditions or the impact of foreign objects such as dust particles and the like, residual stress is generated on the blade, so that cracks are generated, and failure are caused. At present, laser shock peening is used as a treatment process of a blade, residual stress is introduced on the surface of the blade, the fatigue life and the shock resistance of the blade in service are greatly improved, and the residual stress introduced after the laser shock peening is particularly large, so that the blade life is favorable in what range, and the residual stress measurement value is needed to support. Therefore, the measurement of the residual stress of the single crystal blade is very important for the evaluation of the blade before and after service and the treatment process.
At present, the mode used for nondestructive residual stress detection in a laboratory is also a mode based on a powder sample or a polycrystalline sample, and the mode is not suitable for a single crystal sample or an oriented crystal sample. The measurement of residual stress of single crystals and oriented crystals is currently performed by means of large scientific devices, such as synchrotron radiation X-ray and neutron diffraction. Rely on big scientific equipment to realize high accuracy and even high spatial resolution's measurement, however the available machine of big scientific equipment is limited in the time, can not satisfy the purpose of producing at any time and measuring at any time, and the data bulk that big scientific equipment gathered is very huge, often has the multilayer meaning moreover, and the data analysis degree of difficulty is great, is not practical in engineering in-service use.
Therefore, in light of the above practical needs and the shortcomings of the prior art, we will purposely propose a single crystal/directional crystal stress measurement system using monochromatic X-rays at conventional laboratory energy levels to achieve efficient, fast, and automated precision measurement.
The above information disclosed in this background section is only for enhancement of understanding of the background of the invention and therefore it may contain information that does not form the prior art that is already known in this country to a person of ordinary skill in the art.
SUMMERY OF THE UTILITY MODEL
To the problem that exists among the prior art, the utility model provides a monochromatic X ray's single crystal/directional brilliant stress measurement system simplifies the detection demand, only needs the monochromatic X ray of low laboratory energy level alright conveniently automatic precision measurement obtain single crystal residual stress and stress tensor.
The utility model aims at realizing through following technical scheme, a monochromatic X ray's single crystal/directional brilliant stress measurement system includes:
a multi-axis sample stage having an upper surface supporting a single crystal/oriented crystal sample, the multi-axis sample stage including an X degree of freedom to translate along an X axis, a Y degree of freedom to translate along a Y axis, a Z degree of freedom to translate along a Z axis, a rotational degree of freedom to rotate about a Z axis, and a tilt degree of freedom to tilt about an X axis and/or a Y axis,
a concentric height adjustment module configured to adjust the sample surface to a concentric height position, the concentric height adjustment module including a position measurer to collect a position of the sample surface, the concentric height adjustment module adjusting the sample surface to the concentric height position based on the sample surface position, the concentric height position being a position where the multi-axis sample stage does not change height during rotation and tilting and being a center position where the X-ray generator and the detector rotate in a plane,
an X-ray generator that generates monochromatic X-rays to irradiate the sample, the X-ray generator performing a circular motion along a circle having the concentric high position as a rotation center,
an acquisition module that receives diffraction signals from a sample, the acquisition module performing a circular motion along a circle centered on the concentric high position to acquire diffraction peak signals,
a controller electrically connected with the X-ray generator and the acquisition module,
a computing module configured to generate stress data based on the diffraction peak signal, the computing module being electrically connected to the acquisition module.
In the stress measurement system, the stress measurement system further comprises a sample stage control module electrically connected with the multi-axis sample stage, the concentric height adjusting module and the controller, the concentric height adjusting module sends an instruction to the sample stage control module based on the surface position of the sample, and the sample stage control module, the controller and/or the calculating module comprise a memory for storing data, a digital signal processor for processing data and drawing, an Application Specific Integrated Circuit (ASIC) or a Field Programmable Gate Array (FPGA).
In the stress measuring system, the calculation module comprises a fitter for fitting based on the diffraction peak signals to obtain diffraction angle data, a stress calculator for calculating the residual stress of the sample based on the diffraction angle, and a stress tensor calculator for calculating the stress tensor of the sample based on the plurality of diffraction peak signals.
In the stress measurement system, the multi-axis sample stage comprises a clamp which is used for fixing a sample and can carry out micro adjustment on the position of the sample.
In the stress measuring system, the position measurer comprises an optical measurer, a laser range finder and/or a laser profile collector.
In the stress measurement system, the acquisition module comprises a line detector or an area detector.
In the stress measurement system, the multi-axis sample table comprises a coarse adjuster with first adjusting precision and a fine adjuster with second adjusting precision in the Z degree of freedom of translation along the Z axis.
In the stress measurement system, the stress measurement system further comprises an electron back-scattering diffractometer for measuring the crystal orientation of the sample and a standard sample for calibrating the peak position of the diffraction peak, wherein the standard sample comprises alumina powder, calcium carbonate powder and/or lithium lanthanum zirconium oxygen powder.
In the stress measurement system, the multi-axis sample table comprises a plurality of motion table stacking structures or an integrated six-degree-of-freedom displacement table.
In the stress measurement system, the controller and/or the computing module are in wired/wireless connection with the mobile terminal, and the mobile terminal comprises a computer, a mobile phone, a bracelet and a cloud server.
Compared with the prior art, the utility model has the advantages of it is following:
the utility model adjusts the height of the single crystal sample based on the determined crystal orientation of the single crystal sample to ensure that the surface of the single crystal sample is positioned at the concentric high position, wherein, the concentric high position is the position where the height of an observation point is not changed in the tilting process of the single crystal sample, thus ensuring the detection precision; adjusting the incidence direction of monochromatic X-rays and the relative position of a detector for obtaining diffraction signals and a single crystal sample to obtain diffraction signals; and obtaining the strongest position of the diffraction peak based on the diffraction signal, calculating the residual stress and stress tensor of the single crystal sample based on the diffraction peak at the position, simplifying the detection requirement, conveniently detecting the residual stress of the single crystal in a large batch without X rays, synchrotron radiation and neutron diffraction with high energy level.
Drawings
Various other advantages and benefits of the present invention will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the invention. It is obvious that the drawings described below are only some embodiments of the invention, and that for a person skilled in the art, other drawings can be obtained from these drawings without inventive effort. Also, like parts are designated by like reference numerals throughout the drawings.
In the drawings:
fig. 1 is a schematic structural diagram of a monochromatic X-ray single crystal/oriented crystal stress measurement system according to an embodiment of the present invention.
The invention is further explained below with reference to the drawings and examples.
Detailed Description
Specific embodiments of the present invention will be described in more detail below with reference to the accompanying drawings. While specific embodiments of the invention are shown in the drawings, it will be understood that the invention may be embodied in various forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art.
It should be noted that certain terms are used throughout the description and claims to refer to particular components. As one skilled in the art will appreciate, various names may be used to refer to a component. This specification and claims do not intend to distinguish between components that differ in name but not function. In the following description and in the claims, the terms "include" and "comprise" are used in an open-ended fashion, and thus should be interpreted to mean "include, but not limited to. The following description is of the preferred embodiment of the invention, and is made for the purpose of illustrating the general principles of the invention and not for the purpose of limiting the invention. The protection scope of the present invention is subject to the limitations defined by the appended claims.
For the purpose of facilitating understanding of the embodiments of the present invention, the following description will be given by way of example with reference to the accompanying drawings, and the drawings do not limit the embodiments of the present invention.
For a better understanding, as shown in fig. 1, a monochromatic X-ray single crystal/directional crystal stress measurement system includes,
a multi-axis sample stage 1, an upper surface of which supports a single crystal/oriented crystal sample, the multi-axis sample stage 1 including an X degree of freedom to translate along an X axis, a Y degree of freedom to translate along a Y axis, a Z degree of freedom to translate along a Z axis, a rotational degree of freedom to rotate about the Z axis, and a tilting degree of freedom to tilt about the X axis and/or the Y axis,
a concentric height adjustment module 3 configured to adjust a sample surface to a concentric height, the concentric height adjustment module 3 connected to the sample stage control module 2 including a position measurer to collect a position of the sample surface, the concentric height adjustment module 3 sending an instruction to the sample stage control module 2 based on the sample surface position so that the sample surface is at a concentric height position which is a position where the multi-axis sample stage 1 does not change in height during rotation and tilting and which is a center position where the X-ray generator 4 and the detector rotate in a plane,
an X-ray generator 4 that generates monochromatic X-rays to irradiate the sample, the X-ray generator 4 performing a circular motion along a circle having the concentric high position as a rotation center, when the X-ray generator 4 rotates, an irradiation point is always located at the concentric high position,
an acquisition module 5 for receiving diffraction signals from the sample, wherein the acquisition module 5 performs circular motion along a circle with the concentric high position as a circle center, when the acquisition module 5 rotates, the rotation center is always positioned at the concentric high position,
a controller 6 electrically connected to the stage control module 2, the X-ray generator 4 and the acquisition module 5, wherein the controller 6 sends an instruction to the stage control module 2 to rotate and tilt the surface of the sample at the concentric high position based on the crystal orientation of the sample, and adjusts the X-ray incidence direction of the X-ray generator 4 and the acquisition position of the acquisition module 5 to acquire a diffraction peak signal,
and the calculation module 7 is connected with the acquisition module 5, and the calculation module 7 generates stress data based on the diffraction peak signals.
The utility model discloses a monochromatic X ray's single crystal/directional brilliant measurement system realizes high-efficient swift, the automatic precision measurement of residual stress in to single crystal/directional brilliant sample.
In one embodiment, a sample stage control module 2 electrically connected to the multi-axis sample stage 1, the sample stage control module 2 controlling the motion of the sample stage in its degree of freedom based on instructions.
In one embodiment, the measurement system includes a calculation module 7, a concentric height adjustment module 3, a sample stage control module 2, an X-ray generation and acquisition module 5, a multi-axis sample stage 1, and a controller 6. The controller 6 obtains the diffraction peak of the possible crystal face according to the approximate crystal orientation and the Bragg equation, thereby adjusting the X-ray incidence direction of the X-ray generation and acquisition module 5 and the approximate acquisition position of the detector. The height direction of the multi-axis sample table 1 is controlled by the sample table control module 2, and the concentric height adjusting module 3 is combined, so that the sample surface fixed by the sample clamp is adjusted to the concentric height. In the signal acquisition process, the rotation and tilting functions of the multi-axis sample stage 1 are controlled by the sample stage control module 2, so that the peak searching process is realized. Finally, the acquired diffraction peak signals are subjected to peak shape fitting in a calculation module 7 to obtain an accurate diffraction angle, so that the stress is calculated.
In a preferred embodiment, wherein the general orientation of the crystals need only be known, it can be determined by the production, processing or fabrication process of the sample, or by Electron Back Scattering Diffraction (EBSD).
In a preferred embodiment, the concentric height is the position where the sample observation point does not change height during rotation and tilting, and is also the position where the X-ray generator 4 and the detector rotate in the plane. The change of the position of the observation point is moved in the plane by the X and Y displacement stages.
In a preferred embodiment, the concentric height adjustment module 3 comprises a height detector, and the height measurement may be performed by using an optical low-depth-of-field lens, laser ranging, or laser profile acquisition. The sample stage control module 2 can adjust the surface height of the sample according to the height information collected by the concentric height adjusting module 3, or adjust the height and the inclination of a specific point according to the collected contour information.
In a preferred embodiment, the multi-axis sample stage 1 has five or six dimensions, including in-plane movement (X-axis, Y-axis), height-direction translation (Z-axis), in-plane rotation (about Z-axis), and tilt around axis (which may include about X-axis and about Y-axis). The adjustment of the sample stage in the height direction can be divided into Z-axis coarse adjustment and Z-axis fine adjustment. The multi-dimensional sample table can be built in a mode that a plurality of motion tables are stacked, and can also be a combination of an integrated hexapod displacement table and a necessary expansion table.
In a preferred embodiment, the calculation module 7 is in communication with the X-ray generation and acquisition module 5 and the stage control module 2. The calculation module 7 provides the crystal planes likely to produce diffraction peaks and the corresponding diffraction angles and positions of the diffraction peaks in space. The X-ray generation and acquisition module 5 rotates the X-ray generator 4 and the detector to corresponding positions around a concentric point according to the result provided by the calculation module 7. The sample stage control module 2 rotates and tilts the sample within a set angle range according to the result provided by the calculation module 7. The acquisition of the X-ray diffraction signal can be performed while rotating and tilting.
In a preferred embodiment, the detector may be a line detector, or a plane detector.
In a preferred embodiment, wherein the stress calculation module 7 includes a peak shape fit and a peak position calibration, the calibration includes using alumina powder, calcium carbonate powder, and lithium lanthanum zirconium oxide powder.
To further understand the present invention, in the embodiment, a single crystal nickel-based alloy sample having a <001> orientation is fixed on a sample stage by a jig, the <001> direction is substantially along the Z direction as shown in the figure, and the concentric height adjusting module 3 adjusts the position to be measured to the concentric height position. The calculation module 7 calculates the crystal face and the corresponding diffraction angle which can generate diffraction signals in a high angle range such as (130 degrees to 165 degrees), the X-ray generation and acquisition module 5 records the corresponding diffraction angle, when the first diffraction peak is acquired, the sample stage control module 2 starts to control the sample stage to rotate around the Z axis, the detector acquires signals at the same time, when the acquired diffraction signals are higher than the background signals by a certain threshold value, the sample stage control module stops rotating (about 20 percent), and starts to swing (including rotating and tilting directions) in the range of +/-10 degrees of the position, tilting is performed by 0.1 degree every time, data acquisition is performed, and at the same time, tilting is also performed according to a certain step length (0.1 degree), and the diffraction signals of each movement are recorded. According to the recorded data, a two-dimensional diffraction peak distribution cloud picture is made, and the residual stress is calculated in the stress calculation module 7 according to the calibration result. After the peak searching of the diffraction peak and the residual stress calculation are finished, the peak searching, calibration and calculation processes of the next diffraction peak are automatically carried out. After at least 4 diffraction peaks are collected and calculated, the stress tensor can be obtained.
In the preferred embodiment of the stress-measuring system described, the calculation module 7 comprises,
a fitter 8 that fits based on the diffraction peak signals to obtain diffraction angle data,
a stress calculator 9 for calculating a residual strain/force of a certain crystal orientation of the sample based on the diffraction angle,
a stress tensor calculator that calculates a strain/force tensor of the sample based on the plurality of diffraction peak signals.
In the preferred embodiment of the stress measuring system, the multi-axis sample stage 1 comprises a plurality of motion stage stacked structures or an integrated six-degree-of-freedom displacement stage.
In a preferred embodiment of the stress measuring system described, the multi-axis sample stage 1 comprises a rotatable clamp for holding a sample.
In a preferred embodiment of the stress measuring system, the position measuring device comprises an optical measuring device, a laser distance measuring device and/or a laser profile collector.
In a preferred embodiment of the stress-measuring system described, the acquisition module 5 comprises a line detector or an area detector.
In the preferred embodiment of the stress measuring system, the multi-axis sample stage 1 comprises a coarse adjuster with first adjusting precision and a fine adjuster with second adjusting precision in the Z degree of freedom of translation along the Z axis.
In a preferred embodiment of the stress measurement system, the stress measurement system further comprises an electron back-scattering diffractometer for measuring the crystal orientation of the sample and a standard sample for calibrating the peak position of the diffraction peak, the standard sample comprising alumina powder, calcium carbonate powder and/or lithium lanthanum zirconium oxide powder.
In a preferred embodiment of the stress measurement system, the stage control module 2, the controller 6 and/or the calculation module 7 comprise a memory for storing data and a digital signal processor, an application specific integrated circuit ASIC or a field programmable gate array FPGA for processing data and drawing, the memory comprising one or more of a read only memory ROM, a random access memory RAM, a flash memory or an electrically erasable programmable read only memory EEPROM.
In the preferred embodiment of the stress measurement system, the sample stage control module 2, the controller 6 and/or the computing module 7 are connected with the mobile terminal in a wired or wireless manner, and the mobile terminal comprises a computer, a mobile phone, a bracelet, a large screen and a cloud server.
The utility model discloses can utilize monochromatic X ray to realize realizing high-efficient swift, the automatic precision measurement to single crystal and directional brilliant residual stress in conventional laboratory.
Although the embodiments of the present invention have been described above with reference to the accompanying drawings, the present invention is not limited to the above-described embodiments and application fields, and the above-described embodiments are illustrative, instructive, and not restrictive. Those skilled in the art, having the benefit of this disclosure, may effect numerous modifications thereto without departing from the scope of the invention as defined by the appended claims.
Claims (10)
1. A single crystal/oriented crystal stress measuring system of monochromatic X-ray is characterized by comprising,
a multi-axis sample stage having an upper surface supporting a single crystal/oriented crystal sample, the multi-axis sample stage including an X degree of freedom to translate along an X axis, a Y degree of freedom to translate along a Y axis, a Z degree of freedom to translate along a Z axis, a rotational degree of freedom to rotate about a Z axis, and a tilt degree of freedom to tilt about an X axis and/or a Y axis,
a concentric height adjustment module configured to adjust the sample surface to a concentric height position, the concentric height adjustment module including a position measurer to collect a position of the sample surface, the concentric height adjustment module adjusting the sample surface to the concentric height position based on the sample surface position, the concentric height position being a position where the multi-axis sample stage does not change height during rotation and tilting and being a center position where the X-ray generator and the detector rotate in a plane,
an X-ray generator that generates monochromatic X-rays to irradiate the sample, the X-ray generator performing a circular motion along a circle having the concentric high position as a rotation center,
an acquisition module that receives diffraction signals from a sample, the acquisition module performing a circular motion along a circle centered on the concentric high position to acquire diffraction peak signals,
a controller electrically connected with the X-ray generator and the acquisition module,
a computing module configured to generate stress data based on the diffraction peak signal, the computing module being electrically connected to the acquisition module.
2. The stress-measuring system of claim 1, wherein the stress-measuring system further comprises a sample stage control module electrically connecting the multi-axis sample stage, the concentric height adjustment module and the controller, the concentric height adjustment module sending instructions to the sample stage control module based on the sample surface position, the sample stage control module, the controller and/or the calculation module comprising a memory for storing data and a digital signal processor, an Application Specific Integrated Circuit (ASIC) or a Field Programmable Gate Array (FPGA) for processing data and mapping.
3. The stress-measuring system of claim 1 wherein the calculation module comprises a fitter that fits based on said diffraction peak signals to obtain diffraction angle data, a strain/force calculator that calculates the residual strain/force of the sample based on diffraction angles, a strain/force tensor calculator that calculates the stress tensor of the sample based on the plurality of diffraction peak signals.
4. The stress-measuring system of claim 1, wherein the multi-axis sample stage comprises a micro-adjustable clamp for holding the sample.
5. The stress-measuring system of claim 1, wherein the position measurer comprises an optical measurer, a laser rangefinder and/or a laser profiler.
6. The stress-measuring system of claim 1, wherein the acquisition module comprises a line detector or an area detector.
7. The stress-measuring system of claim 1, wherein the multi-axis sample stage comprises a coarse adjustment of the first precision of adjustment and a fine adjustment of the second precision of adjustment in a Z degree of freedom of translation along the Z axis.
8. The stress-measuring system of claim 1, wherein the stress-measuring system further comprises an electron back-scattering diffractometer for measuring the crystal orientation of the sample and a standard sample for calibrating the peak position of the diffraction peak, the standard sample comprising alumina powder, calcium carbonate powder, and/or lithium lanthanum zirconium oxide powder.
9. The stress-measuring system of claim 1, wherein the multi-axis sample stage comprises a multiple motion stage stack or an integral six degree-of-freedom displacement stage.
10. The stress measurement system of claim 1, wherein the controller and/or computing module is wired or wirelessly connected to a mobile terminal, the mobile terminal comprising a computer, a cell phone, a bracelet, and a cloud server.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113945591A (en) * | 2021-09-14 | 2022-01-18 | 中国电子科技集团公司第十一研究所 | Half-peak-width automatic test tool |
| CN116609370A (en) * | 2023-04-13 | 2023-08-18 | 深圳市埃芯半导体科技有限公司 | Wafer detection method and electronic equipment |
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2019
- 2019-09-19 CN CN201921594734.1U patent/CN211785230U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113945591A (en) * | 2021-09-14 | 2022-01-18 | 中国电子科技集团公司第十一研究所 | Half-peak-width automatic test tool |
| CN113945591B (en) * | 2021-09-14 | 2023-10-24 | 中国电子科技集团公司第十一研究所 | Half-peak width automatic test fixture |
| CN116609370A (en) * | 2023-04-13 | 2023-08-18 | 深圳市埃芯半导体科技有限公司 | Wafer detection method and electronic equipment |
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