CN211783905U - FP etalon temperature drift parameter calibrating device - Google Patents
FP etalon temperature drift parameter calibrating device Download PDFInfo
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- CN211783905U CN211783905U CN201922374898.XU CN201922374898U CN211783905U CN 211783905 U CN211783905 U CN 211783905U CN 201922374898 U CN201922374898 U CN 201922374898U CN 211783905 U CN211783905 U CN 211783905U
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Abstract
The utility model provides a FP etalon temperature drift parameter calibration device, include: the detection module is used for measuring the central wavelength of a laser beam generated by the laser and acquiring temperature drift calibration data generated in the process of measuring the laser beam by the FP wavelength meter; the controller is used for calculating temperature drift calibration parameters according to the temperature drift calibration data and adjusting the laser light according to the temperature drift calibration parameters; the detection module comprises a cathode lamp, a light intensity detector and the like. The cathode lamp and the light intensity detector can obtain the drift amount of the central wavelength and the temperature and temperature derivative of the FP etalon measured by the temperature sensor arranged on the FP etalon, the detection module transmits measured multiple groups of temperature drift calibration data to the controller, the controller further obtains temperature drift calibration parameters, and the laser beam central wavelength of the laser is controlled by the line width and narrowing module according to the temperature drift calibration parameters, so that the error caused by measuring the central wavelength of the FP etalon is solved, and the central wavelength of the laser is maintained to be stable.
Description
Technical Field
The utility model relates to an accurate measurement field, concretely relates to FP etalon temperature drift parameter calibration device.
Background
In the field of semiconductor chip processing, as the requirement for the characteristic size of an IC chip is smaller and smaller, the requirement for the performance of a photoetching machine is higher and higher, and in order to realize thinner lines, the central wavelength of a light source adopted by the photoetching machine is required to be shorter and shorter. Currently, in the field of chip processing, excimer lasers are ideal light sources for semiconductor lithography due to their large energy, narrow linewidth and short wavelength, and the most commonly used are KrF excimer lasers and ArF excimer lasers, whose center wavelengths are 248nm and 193nm, respectively.
The wavelength of the excimer laser is required to be kept stable in the exposure process of the photoetching machine, and the change of the wavelength can cause the position change of an imaging surface of the photoetching machine, so that the exposure line is widened, and the yield of chips is reduced. For a 110nm process node, the wavelength stability of the laser is required to be higher than 0.05pm, and for a 28nm process node, the wavelength stability of the laser is required to be higher than 0.03 pm. In order to obtain stable central wavelength, the central wavelength of the excimer laser is measured in real time through an internal detection module, and the central wavelength of the laser is kept constant by adjusting the grating angle in a line width narrowing module. Therefore, the requirement on the measurement accuracy of the central wavelength of the online detection module is high.
The method for measuring the center wavelength of the excimer laser mainly comprises an echelle grating method (US 4391523, US6717670) and a Fabry-Perot etalon (hereinafter called as FP etalon) method, wherein in the patent US 4391523, the echelle grating is adopted to measure the center wavelength of the laser, the echelle grating has high diffraction order and high spectral resolution, and can realize high-precision center wavelength measurement, however, the echelle grating spectrometer has huge volume, is not suitable for on-line measurement of the center wavelength of the laser and is generally used for off-line measurement. The FP standard method is an ideal choice for the excimer laser to measure the center wavelength on line because of its small volume and high spectral resolution (for example, US6480275, US6539046), and the laser generates interference fringes after passing through the FP etalon, and the center wavelength of the incident laser is obtained according to the position of the peak of the interference fringes.
When the FP etalon measures the center wavelength of the excimer laser, after the FP etalon is irradiated by the laser, parameters (refractive index of internal gas, distance between reflectors, and the like) of the FP etalon are changed, so as to cause temperature drift of a measurement result of the center wavelength, and the measurement result of the center wavelength can be corrected by adopting real-time measurement of the temperature of the FP etalon to perform feedback (for example, patent EP0801829B1, US 6667804). Secondly, after the laser leaves the factory and is used for a period of time, the temperature drift property of the laser changes along with the use of the FP etalon, online calibration cannot be realized, and if the original calibration parameters are used, the calibrated center wavelength has larger deviation with the actual value, and the exposure quality of the photoetching machine is greatly influenced.
In view of this, in order to improve the long-term stability of the center wavelength of the excimer laser, solve the problem that the temperature drift calibration parameter changes when the detection module FP etalon measures the center wavelength, and provide a calibration device for the temperature drift calibration parameter of the FP etalon for off-line and on-line calibration of the temperature drift calibration parameter of the FP etalon, which becomes a technical problem to be solved in the art urgently.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide a FP etalon temperature drift parameter calibration device to the above-mentioned defect of prior art.
The purpose of the utility model can be realized by the following technical measures:
the utility model provides a FP etalon temperature drift parameter calibrating device, the temperature drift calibrating device includes:
the detection module is used for measuring the central wavelength of a laser beam generated by the laser and acquiring temperature drift calibration data generated in the process of measuring the laser beam by the FP wavelength meter;
the controller is used for calculating temperature drift calibration parameters according to the temperature drift calibration data and adjusting the laser light according to the temperature drift calibration parameters;
wherein the detection module comprises:
the first beam splitter is arranged on a laser beam path emitted by the laser and used for splitting the laser beam into a first laser beam and a second laser beam;
a cathode lamp containing metal atoms for absorbing laser energy of a specific wavelength,
a light intensity detector for detecting the energy change of the first laser beam after passing through the cathode lamp,
the controller calculates the minimum energy value detected by the light intensity detector;
the FP wavemeter is used for forming the second laser beam into interference fringes;
the imaging element is used for receiving and displaying the interference and the fringes generated by the FP wavemeter;
the controller is used for calculating the central wavelength of the laser corresponding to the moment when the energy value of the light intensity detector is minimum according to the interference fringes and calculating the central wavelength drift amount of the central wavelength compared with the theoretical central wavelength;
and the temperature sensor is arranged on the FP etalon and is used for recording the temperature and the temperature derivative change of the FP etalon in real time.
Optionally, the detection module further includes:
the second beam splitter is arranged in parallel with the first beam splitter, is arranged in front of a laser emergent port of the laser and is used for reflecting the laser beam and enabling the reflected laser beam to enter the first beam splitter;
and the optical shaping component is used for shaping the light beam on the laser path.
Optionally, the surfaces of the first beam splitter and the second beam splitter are non-coated flat glass, and the first beam splitter and the second beam splitter are CaF2 or fused quartz material.
Optionally, when the laser light source of the laser is KrF, the cathode lamp is an Fe lamp; when the laser light source of the laser is ArF, the cathode lamp is a Pt lamp.
Optionally, the light shaping component comprises:
the converging mirror is arranged between the FP etalon and the imaging element and is used for converging the interference fringes on the imaging element;
the dodging mirror is arranged in front of the light incident path of the FP etalon and is used for uniformly emitting the second laser beam into the FP etalon; and
and the reflecting mirror is arranged between the converging mirror and the imaging element, and the surface of the reflecting mirror is plated with a high-reflection film for reflecting the interference fringes.
Optionally, the temperature parameter calibration data includes a temperature, a temperature derivative, and a center wavelength shift amount of the FP etalon, and the controller calculates the temperature drift calibration parameter by a linear fitting method or a least square method.
The utility model also provides a FP etalon temperature drift parameter calibration method for laser instrument center wavelength measurement, calibration method is used for above-mentioned arbitrary FP etalon temperature drift parameter calibration device, calibration method includes following step:
s1: the detection module divides laser generated by the laser into two beams;
detecting the energy change of the first laser beam after passing through the cathode lamp, and calculating the minimum energy value detected by the light intensity detector;
the second laser beam forms interference fringes; receiving and displaying the interference and fringes generated by the FP wavemeter; calculating the central wavelength lambda v of the laser at the moment when the energy value of the corresponding light intensity detector is minimum according to the interference fringes, and calculating the central wavelength drift amount d lambda of the central wavelength lambda v compared with the theoretical central wavelength lambda th, wherein the central wavelength drift amount d lambda is lambda th-lambda v;
recording the temperature T of the FP etalon through the temperature sensor and calculating the temperature derivative dT/dT of the temperature T; s2, repeating the step S1 to obtain a plurality of groups of temperature drift calibration data;
s3: the controller receives and stores a plurality of groups of temperature drift calibration data, and calculates a temperature drift calibration parameter k according to the temperature drift calibration data1,k2,k0The equation satisfies:
wherein T is the etalon temperature, dT/dT is the temperature derivative of the etalon temperature T, and d lambda is the wavelength drift amount;
s4: and the controller adjusts the central wavelength of the laser light source according to the temperature drift calibration parameter.
Optionally, according to the temperature drift calibration data, calculating the temperature drift calibration parameter specifically includes:
and calculating the temperature drift calibration parameter by a linear fitting method or a least square method.
Optionally, before step S3, the following steps are further included:
adjusting the working parameters of the laser, and repeating the step S1 to obtain a plurality of groups of temperature drift calibration data of the laser in different working states;
the laser working parameters comprise laser frequency and Burst mode parameters.
Optionally, the step S1 further includes adjusting the laser wavelength to scan around the theoretical center wavelength, and recording the energy value corresponding to each wavelength by the light intensity detector.
The beneficial effects of the utility model reside in that a FP etalon temperature drift parameter calibration device and method are provided, the temperature and the temperature derivative of the FP etalon that the drift volume that can obtain central wavelength through cathode lamp among the detection module and light intensity detector and establish the temperature sensor on the FP etalon that records, detection module will record multiunit temperature drift calibration data pass to the controller, the controller obtains last temperature drift calibration parameter through least square method or linear fitting method on line, and control laser beam central wavelength to the laser instrument according to the narrow module of temperature drift calibration parameter regulation line width pressure, the error that FP etalon measurement central wavelength brought has then been solved, it is stable to maintain laser instrument central wavelength. The device and the method can calibrate the temperature drift parameters of the FP etalon on line and can realize the long-term central wavelength stability and accuracy of the laser.
Drawings
Fig. 1 is a schematic diagram of an FP etalon temperature drift parameter calibration device according to an embodiment of the present invention;
FIG. 2 is a structural diagram of a FP etalon temperature drift parameter calibration device according to an embodiment of the present invention;
fig. 3 is a flow chart of the on-line calibration of the temperature drift parameter of the FP etalon for measuring the center wavelength according to the embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more clearly understood, the present invention will be described in further detail with reference to the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
In order to make the description of the present disclosure more complete and complete, the following description is given for illustrative purposes with respect to the embodiments and specific examples of the present invention; it is not intended to be the only form in which the embodiments of the invention may be practiced or utilized. The embodiments are intended to cover the features of the various embodiments as well as the method steps and sequences for constructing and operating the embodiments. However, other embodiments may be utilized to achieve the same or equivalent functions and step sequences.
Fig. 1 shows a schematic diagram of a laser FP etalon according to an embodiment of the present invention. The FP etalon is a high-precision optical element, which is composed of two optical lenses with parallel height, one surface of the lens is plated with a high-reflection film, and the reflection coefficient of the film layer is generally larger than 95%. Laser beams of the laser are incident on the FP etalon and are reflected by the high-reflection film for multiple times, interference fringes are obtained on the imaging element through the converging mirror, and the central wavelength of the laser can be obtained according to the position distribution of the interference fringes.
Wherein the peak position r of the interference fringe satisfies the following equation:
wherein λ is the laser output wavelength, n is the refractive index of the gas in the FP etalon, d is the pitch of the FP etalon, m is the order of the interference fringes,
when the FP etalon is illuminated by the laser, n and d will change, causing a shift in wavelength, which can be expressed as:
by calibrating the device, T and dT/dT and d λ are actually measured, which yields the following formula:
the temperature drift calibration parameters (k1, k2, k0) can be obtained by a least square method or a linear fitting method.
Referring to fig. 2, fig. 2 shows a structural diagram of a calibration apparatus for temperature drift parameters of a laser FP etalon according to an embodiment of the present invention. As shown in fig. 2, the laser beam emitted from the excimer laser 1 enters the detection module 3, the second beam splitter 5 in the detection module 3 reflects onto the first beam splitter 6, both the second beam splitter 5 and the first beam splitter 6 are CaF2 or fused quartz material, which is parallel plate glass, the surface is not coated, the first laser beam reflected by the first beam splitter 6 enters the cathode lamp 12, and passes through the cathode lamp 12The cathode lamp 12 irradiates the light intensity detector 13, when the laser is KrF, the hollow cathode lamp generally adopts an Fe lamp, the absorption peak of which is 248.32710nm, when the laser is ArF, the hollow cathode lamp generally adopts a Pt lamp, the absorption peak of which is 193.43690nm, and the light intensity detector 13 is used for detecting the laser energy change of the emission line of the first laser beam passing through the cathode lamp; the second laser beam penetrating through the second beam splitter 6 enters the light uniformizing mirror 7, and uniformly enters the FP etalon 8 after passing through the light uniformizing mirror 7, and the temperature sensor 14 on the FP etalon 8 records the temperature and the temperature change of the FP in real time and transmits the temperature T and the temperature derivative dT/dT to the controller 4; and after the second laser beam is reflected for multiple times by the FP standard, forming interference fringes by the second laser beam, after the interference fringes are converged by the converging mirror 9, converging the light beam on the camera 11 by the converging mirror 9, and obtaining the interference fringes of the FP standard on the camera 11, wherein the camera 11 can be an ultraviolet CCD (charge coupled device) or a CMOS (complementary metal oxide semiconductor). The controller is used for displaying the position distribution of the interference fringes according to the camera through a formulaAnd calculating to obtain the central wavelength of the laser.
In order to reduce the volume, a reflecting mirror 10 can be arranged on the light path for reflection, a high reflection film is plated on the reflecting mirror 10, and the reflecting mirror 10 can be arranged between the converging mirror 9 and the camera 11 or can be arranged at other suitable positions on the light path.
Since the FP etalon has a measurement error during laser irradiation, the controller calculates a minimum energy value Ev of the laser beam detected by the light intensity detector 13 after passing through the cathode lamp 12, and calculates a center wavelength λ v of the laser at a time corresponding to the minimum energy value Ev, and the center wavelength drift d λ is an absolute value of λ th- λ v compared with a theoretical center wavelength λ th of the laser.
The controller 4 obtains temperature drift data (T, dT/dT, d lambda), adjusts parameters such as repetition frequency, Burst mode and the like of the working state of the laser 1, measures temperature drift calibration data under all working conditions of the laser, and thus obtains n groups of temperature drift data. Then substituting the formula (3), and obtaining the temperature drift calibration parameter (k) of the FP etalon according to a least square method and a linear fitting method1,k2,k0)。
The calibration method of the calibration device for the temperature drift parameters of the laser FP etalon comprises the following steps:
in step S1, the detection module divides the laser generated by the laser into two beams;
detecting the energy change of the first laser beam after passing through the cathode lamp, and calculating the minimum energy value detected by the light intensity detector;
the second laser beam forms interference fringes; receiving and displaying the interference and fringes generated by the FP wavemeter; calculating the central wavelength lambda v of the laser at the moment when the energy value of the corresponding light intensity detector is minimum according to the interference fringes, and calculating the central wavelength drift amount d lambda of the central wavelength lambda v compared with the theoretical central wavelength lambda th, wherein the central wavelength drift amount d lambda is lambda th-lambda v;
recording the temperature T of the FP etalon through the temperature sensor and calculating the temperature derivative dT/dT of the temperature T; in step S2, repeating step S1 to obtain multiple sets of temperature drift calibration data;
in step S3, the controller receives and stores a plurality of sets of the temperature drift calibration data, and calculates a temperature drift calibration parameter k according to the temperature drift calibration data1,k2,k0The equation satisfies:
wherein T is the etalon temperature, dT/dT is the temperature derivative of the etalon temperature T, and d lambda is the wavelength drift amount;
in step S4, the controller adjusts the center wavelength of the laser light source according to the temperature drift calibration parameter.
Optionally, according to the temperature drift calibration data, calculating the temperature drift calibration parameter specifically includes: and calculating the temperature drift calibration parameter by a linear fitting method or a least square method.
The method further comprises the following steps before the step S3:
adjusting the working parameters of the laser, and repeating the step S1 to obtain a plurality of groups of temperature drift calibration data of the laser in different working states; the laser working parameters comprise laser frequency and Burst mode parameters.
The step S1 further includes adjusting the laser wavelength to scan around the theoretical center wavelength, and recording the energy value corresponding to each wavelength by the light intensity detector.
Fig. 3 shows a flow chart of the on-line calibration of the temperature drift parameter of the FP etalon for measuring the center wavelength of the laser device according to the embodiment of the present invention. As shown in FIG. 3, taking KrF laser as an example, during temperature drift parameter calibration, the laser is turned on, the wavelength is adjusted to be near 248.3271nm, the wavelength of the laser is scanned from λ 1 to λ 2, λ 1 is smaller than about 248.3271nm 5pm, λ 2 is larger than about 248.3271nm 5pm, when the wavelength of the laser is scanned, the light intensity detector 13 detects the energy variation of the laser beam passing through the cathode lamp, the controller calculates the minimum energy value Ev detected by the light intensity detector, the controller calculates the laser center wavelength λ v corresponding to the minimum energy value of the light intensity detector, records the temperature T and the temperature derivative dT/dT of the FP wavemeter at the moment, calculates the deviation of the center wavelength λ v from the theoretical absorption peak λ th, that is, the deviation from 248.3271nm, obtains the wavelength drift d λ, and then obtains a set of temperature drift calibration data (T1, dT/dT1, d λ 1), the above processes are repeated, a plurality of groups of data are recorded, meanwhile, the working state of the laser, such as the repetition frequency, the Burst mode and other parameters, is adjusted, the temperature drift calibration data under all working conditions of the laser is measured, so that n groups of calibration data (T1, dT/dT1, d lambda 1, T2, dT/dT2, d lambda 2, … …, Tn, dT/dtn and d lambda n) are obtained, the n groups of calibration data are substituted into the equation (3), and the FP standard temperature drift calibration parameter can be obtained through a least square method or a linear fitting method. The whole process is shown in fig. 3.
The temperature drift parameter calibration method can be used for offline calibration of the temperature drift parameters of the FP etalon, and can also be used for online calibration because no new hardware is introduced.
By adopting the method to correct the laser parameters, the error caused by the FP etalon temperature drift feedback model can be directly and fundamentally removed, and the long-term stability of the central wavelength of the laser can be kept.
The apparatus and method of this patent are exemplified by excimer lasers, but are not limited thereto and can be used with any type of laser for laser wavelength calibration and precise measurement of wavelength.
The above description is only exemplary of the present invention and should not be taken as limiting the scope of the present invention, as any modifications, equivalents, improvements and the like made within the spirit and principles of the present invention are intended to be included within the scope of the present invention.
Claims (6)
1. The utility model provides a FP etalon temperature drift parameter calibration device which characterized in that, FP etalon temperature drift parameter calibration device includes:
the detection module is used for measuring the central wavelength of a laser beam generated by the laser and acquiring temperature drift calibration data generated in the process of measuring the laser beam by the FP wavelength meter;
the controller is used for calculating temperature drift calibration parameters according to the temperature drift calibration data and adjusting laser beams according to the temperature drift calibration parameters;
wherein the detection module comprises:
the first beam splitter is arranged on a laser beam path emitted by the laser and used for splitting the laser beam into a first laser beam and a second laser beam;
a cathode lamp containing metal atoms for absorbing laser energy of a specific wavelength,
a light intensity detector for detecting the energy change of the first laser beam after passing through the cathode lamp,
the controller calculates the minimum energy value detected by the light intensity detector;
the FP wavemeter is used for forming the second laser beam into interference fringes;
the imaging element is used for receiving and displaying the interference and the fringes generated by the FP wavemeter;
the controller is used for calculating the central wavelength of the laser corresponding to the moment when the energy value of the light intensity detector is minimum according to the interference fringes and calculating the central wavelength drift amount of the central wavelength compared with the theoretical central wavelength;
and the temperature sensor is arranged on the FP etalon and is used for recording the temperature and the temperature derivative change of the FP etalon in real time.
2. The FP etalon temperature drift parameter calibration device of claim 1, wherein the detection module further comprises:
the second beam splitter is arranged in parallel with the first beam splitter and is arranged in front of a laser emergent port of the laser device and used for reflecting the laser beam and enabling the reflected laser beam to enter the first beam splitter;
and the optical shaping component is used for shaping the light beam on the laser path.
3. The FP etalon temperature drift parameter calibration device of claim 2, wherein the surfaces of the first beam splitter and the second beam splitter are non-coated flat glass, and the first beam splitter and the second beam splitter are CaF2 or fused silica material.
4. The FP etalon temperature drift parameter calibration device of claim 3, wherein when the laser source of the laser is KrF, the cathode lamp is an Fe lamp; when the laser light source of the laser is ArF, the cathode lamp is a Pt lamp.
5. The FP etalon temperature drift parameter calibration device of claim 4, wherein the light shaping component comprises:
the converging mirror is arranged between the FP etalon and the imaging element and is used for converging the interference fringes on the imaging element;
the dodging mirror is arranged in front of the light incident path of the FP etalon and is used for uniformly emitting the second laser beam into the FP etalon; and
and the reflecting mirror is arranged between the converging mirror and the imaging element, and the surface of the reflecting mirror is plated with a high-reflection film for reflecting the interference fringes.
6. The FP etalon temperature drift parameter calibration device of any one of claims 1 to 5, wherein the temperature parameter calibration data comprises the temperature of the FP etalon, a temperature derivative and a central wavelength drift amount, and the controller calculates the temperature drift calibration parameter by a linear fitting method or a least square method.
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CN111006776A (en) * | 2019-12-25 | 2020-04-14 | 北京科益虹源光电技术有限公司 | FP (Fabry-Perot) wavelength meter temperature drift calibration device and method based on atomic absorption |
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CN111006776A (en) * | 2019-12-25 | 2020-04-14 | 北京科益虹源光电技术有限公司 | FP (Fabry-Perot) wavelength meter temperature drift calibration device and method based on atomic absorption |
CN111006776B (en) * | 2019-12-25 | 2024-06-18 | 北京科益虹源光电技术有限公司 | Atomic absorption-based FP wavelength Ji Wenpiao calibration device and method |
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