CN211700522U - Vertical SMP joint-to-microstrip structure - Google Patents
Vertical SMP joint-to-microstrip structure Download PDFInfo
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- CN211700522U CN211700522U CN202020240210.9U CN202020240210U CN211700522U CN 211700522 U CN211700522 U CN 211700522U CN 202020240210 U CN202020240210 U CN 202020240210U CN 211700522 U CN211700522 U CN 211700522U
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Abstract
The utility model discloses a perpendicular SMP joint changes microstrip structure includes cavity, perpendicular SMP joint, microstrip impedance transformation circuit and microstrip port standing wave debugging circuit; the vertical SMP connector, the microstrip impedance transformation circuit and the microstrip port standing wave debugging circuit are all arranged in the cavity, and the vertical SMP connector is electrically connected with the microstrip impedance transformation circuit through a first gold bonding wire; the microstrip impedance conversion circuit is electrically connected with the microstrip port standing wave debugging circuit through a second gold bonding wire. The utility model discloses a perpendicular SMP connects changes microstrip structure has realized that low-loss low standing wave between perpendicular SMP connects and the plane microstrip changes.
Description
Technical Field
The utility model relates to an antenna technology field, concretely relates to perpendicular SMP connects commentaries on classics microstrip structure.
Background
The K frequency band is a millimeter wave frequency band which is widely applied to a TR component at present, and a main transmission mode is planar transmission in the millimeter wave frequency band. Many high-frequency connectors of the millimeter wave test system adopt a vertical interconnection structure at present. Therefore, how to realize the conversion from the low-loss vertical connector to the planar transmission microstrip line becomes important content of the millimeter wave technical research of the micro-phase.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide a perpendicular SMP connects commentaries on classics microstrip structure realizes that the low-loss low standing wave between perpendicular SMP connects and the plane microstrip changes.
In order to achieve the above object, the utility model provides a vertical SMP joint changes microstrip structure, including cavity, vertical SMP joint, microstrip impedance conversion circuit and microstrip port standing wave debugging circuit; the vertical SMP connector, the microstrip impedance transformation circuit and the microstrip port standing wave debugging circuit are all arranged in the cavity, and the vertical SMP connector is electrically connected with the microstrip impedance transformation circuit through a first gold bonding wire; the microstrip impedance conversion circuit is electrically connected with the microstrip port standing wave debugging circuit through a second gold bonding wire.
The vertical SMP connector is converted into a microstrip structure, wherein the microstrip impedance conversion circuit comprises a first substrate and a plurality of microstrips laid on the first substrate, and the microstrips are connected in sequence; the plurality of microstrips are different in size.
The vertical SMP connector-microstrip conversion structure comprises a microstrip impedance conversion circuit, a microstrip impedance conversion circuit and a signal processing circuit, wherein the microstrip impedance conversion circuit comprises a first microstrip, a second microstrip and a third microstrip which are sequentially connected, and the first microstrip is electrically connected with the SMP connector through a first gold bonding wire; and the third microstrip is electrically connected with the microstrip port standing wave debugging circuit through a second gold bonding wire.
The vertical SMP connector-microstrip structure is characterized in that the first microstrip is a metal sheet with the size of 0.62mm multiplied by 0.4 mm; the second microstrip is a metal sheet with the size of 2mm multiplied by 0.15 mm; the third microstrip is a metal sheet with the size of 2mm multiplied by 0.62 mm.
The vertical SMP connector is converted into a microstrip structure, wherein the microstrip port standing wave debugging circuit comprises a second substrate, a 50-ohm microstrip and a standing wave debugging circuit; the 50 ohm microstrip and the standing wave debugging circuit are laid on the second substrate; one end of the 50 ohm microstrip is electrically connected with the microstrip impedance conversion circuit through a second gold bonding wire; the standing wave debugging circuit is positioned at one end of the 50 ohm microstrip connection microstrip impedance transformation circuit.
The vertical SMP connector-microstrip conversion structure comprises a standing wave debugging circuit, wherein the standing wave debugging circuit comprises a plurality of square metal sheets, the square metal sheets are symmetrically distributed on two sides of a 50 ohm microstrip, and the square metal sheets on the same side are arranged at equal intervals along the length direction of the 50 ohm microstrip.
The vertical SMP connector is converted into a microstrip structure, wherein the distance between the microstrip impedance conversion circuit and the microstrip port standing wave debugging circuit is 0.1 mm.
The vertical SMP connector-microstrip structure comprises a cavity body, wherein the cavity body is a rectangular cavity body and comprises 4 side surfaces, 1 top surface and 1 bottom surface, the vertical SMP connector, the microstrip impedance conversion circuit and the microstrip port standing wave debugging circuit are fixed on the bottom surface of the cavity body in a sintering mode, the distance from a substrate of the microstrip impedance conversion circuit to the side surface of the cavity body is 0.1mm, and the distance from the substrate of the microstrip port standing wave debugging circuit to the side surface of the cavity body is 0.1 mm.
Compared with the prior art, the utility model has the technical effects that:
the vertical SMP connector microstrip-to-microstrip structure of the utility model has low insertion loss, low return loss and larger bandwidth; and compact structure, convenient processing and easy assembly and disassembly.
Drawings
The vertical SMP joint microstrip transition structure of the present invention is provided by the following embodiments and accompanying drawings.
Fig. 1 is a schematic diagram of a vertical SMP joint-to-microstrip structure according to a preferred embodiment of the present invention.
Detailed Description
The vertical SMP connector-to-microstrip structure of the present invention will be described in further detail with reference to fig. 1.
The basic requirements for SMP joint to planar microstrip transitions are: (1) excellent standing wave and insertion loss, namely low standing wave and low loss; (2) the frequency band is wide; (3) is convenient for processing, assembling and using.
Fig. 1 is a schematic diagram of a vertical SMP joint-to-microstrip structure according to a preferred embodiment of the present invention.
Referring to fig. 1, the structure for converting the vertical SMP connector into the microstrip of the present embodiment includes a cavity 1, a vertical SMP connector 2, a microstrip impedance transformation circuit, and a microstrip port standing wave debugging circuit; the vertical SMP connector 2, the microstrip impedance transformation circuit and the microstrip port standing wave debugging circuit are all arranged in the cavity 1, and the vertical SMP connector 2 is electrically connected with the microstrip impedance transformation circuit through a gold bonding wire 7 a; the microstrip impedance conversion circuit is electrically connected with the microstrip port standing wave debugging circuit through a gold bonding wire 7 b.
The microstrip impedance conversion circuit comprises a first substrate 3, a first microstrip 4, a second microstrip 5 and a third microstrip 6; the first microstrip 4, the second microstrip 5 and the third microstrip 6 are laid on the first substrate 3, and the first microstrip 4, the second microstrip 5 and the third microstrip 6 are connected in sequence; the first microstrip 4 is electrically connected with the SMP connector 2 through a gold bonding wire 7 a; the third microstrip 6 is electrically connected with the microstrip port standing wave debugging circuit through a gold bonding wire 7 b. The first microstrip 4, the second microstrip 5 and the third microstrip 6 are connected in sequence to form an impedance transformation structure.
The microstrip port standing wave debugging circuit comprises a second substrate 9, a 50 ohm microstrip 8 and a standing wave debugging circuit 10; the 50 ohm microstrip 8 and the standing wave debugging circuit 10 are laid on the second substrate 9; one end of the 50 ohm microstrip 8 is electrically connected with the third microstrip 6 through a gold bonding wire 7 b; the standing wave debugging circuit 10 is positioned at one end of the 50 ohm microstrip 8 connected with the microstrip impedance transformation circuit.
The signal flow direction is input from the vertical SMP connector 2, and is output by the 50 ohm microstrip 8 after the field distribution is changed by the microstrip impedance conversion circuit.
In this embodiment, 6 square metal sheets are laid on the second substrate 9, and the 6 square metal sheets have the same size; the 6 square metal sheets are all positioned at one end of the 50 ohm microstrip 8; the 6 square metal sheets are equally divided into 2 groups, the 2 groups are respectively positioned at two sides of the 50 ohm microstrip 8, the 3 square metal sheets at each side are arranged at equal intervals along the length direction of the 50 ohm microstrip 8, and the square metal sheets at two sides of the 50 ohm microstrip 8 are symmetrically distributed. The 6 square metal sheets constitute a standing wave debugging circuit 10.
The number and the size of the square metal sheets can be designed according to needs, the square metal sheets are symmetrically distributed on two sides of the 50 ohm microstrip 8, and the square metal sheets on the same side are arranged at equal intervals along the length direction of the 50 ohm microstrip 8.
In this embodiment, the vertical SMP connector 2, the first substrate 3, and the second substrate 9 are all fixed on the inner wall of the cavity 1 by sintering. The vertical SMP joint 2 is SMP (M) -JHD59-L, and the diameter of the vertical SMP joint 2 is 0.4mm, and the length is 1.3 mm. The first substrate 3 and the second substrate 9 are both double-sided boards with a thickness of 0.254mm, and are made of Rogers 6002.
The distance between the vertical SMP connector 2 and the first microstrip 4 is 0.1 mm; the distance between the third microstrip 6 and the 50 ohm microstrip 8 is 0.1 mm.
The first microstrip 4 is a rectangular metal sheet with the size of 0.62mm multiplied by 0.4 mm; the second microstrip 5 is a strip-shaped metal sheet with the size of 2mm multiplied by 0.15 mm; the third microstrip 6 is a rectangular metal sheet with dimensions of 2mm x 0.62 mm. One end of the strip-shaped second microstrip 5 is connected with the first microstrip 4, and the other end of the strip-shaped second microstrip 5 is connected with the third microstrip 6.
The line width of the 50 ohm microstrip 8 is 0.62 mm.
In this embodiment, the cavity 1 is a rectangular cavity and includes 6 faces, namely 4 side faces, 1 top face and 1 bottom face, the vertical SMP connector 2, the first substrate 3 and the second substrate 9 are all disposed in the cavity 1 and fixed on the bottom face of the cavity 1 through a sintering method, a distance d2 from the first substrate 3 to the side face of the cavity 1 is 0.1mm, and a distance d1 from the second substrate 9 to the side face of the cavity 1 is 0.1 mm.
Experiments show that the vertical SMP joint-to-microstrip structure of the embodiment realizes transmission conversion from the K-band vertical SMP joint to a planar microstrip circuit, the conversion difference loss is less than 0.3dB, and the standing wave is better than 1.5.
The above description is merely a preferred embodiment of the present invention, and is not intended to limit the structure of the present invention in any way. All the simple modifications, equivalent changes and modifications made to the above embodiments according to the technical spirit of the present invention still belong to the scope of the technical solution of the present invention.
Claims (8)
1. The vertical SMP connector-microstrip conversion structure is characterized by comprising a cavity, a vertical SMP connector, a microstrip impedance conversion circuit and a microstrip port standing wave debugging circuit; the vertical SMP connector, the microstrip impedance transformation circuit and the microstrip port standing wave debugging circuit are all arranged in the cavity, and the vertical SMP connector is electrically connected with the microstrip impedance transformation circuit through a first gold bonding wire; the microstrip impedance conversion circuit is electrically connected with the microstrip port standing wave debugging circuit through a second gold bonding wire.
2. The vertical SMP connector-to-microstrip structure according to claim 1 wherein said microstrip impedance transformation circuit comprises a first substrate and a plurality of microstrips applied to said first substrate, said plurality of microstrips being connected in series; the plurality of microstrips are different in size.
3. The vertical SMP connector-to-microstrip structure of claim 2, wherein the microstrip impedance transformation circuit comprises a first microstrip, a second microstrip, and a third microstrip connected in sequence, the first microstrip being electrically connected to the SMP connector through a first gold bonding wire; and the third microstrip is electrically connected with the microstrip port standing wave debugging circuit through a second gold bonding wire.
4. The vertical SMP joint-to-microstrip structure of claim 3, wherein the first microstrip is a metal sheet with dimensions 0.62mm x 0.4 mm; the second microstrip is a metal sheet with the size of 2mm multiplied by 0.15 mm; the third microstrip is a metal sheet with the size of 2mm multiplied by 0.62 mm.
5. The vertical SMP connector-to-microstrip structure of claim 1, wherein the microstrip port standing wave debug circuit comprises a second substrate, a 50 ohm microstrip, and a standing wave debug circuit; the 50 ohm microstrip and the standing wave debugging circuit are laid on the second substrate; one end of the 50 ohm microstrip is electrically connected with the microstrip impedance conversion circuit through a second gold bonding wire; the standing wave debugging circuit is positioned at one end of the 50 ohm microstrip connection microstrip impedance transformation circuit.
6. The vertical SMP connector-to-microstrip structure according to claim 5 wherein said standing wave tuning circuit comprises a plurality of square metal foils symmetrically disposed on either side of the 50 ohm microstrip, the square metal foils on the same side being equally spaced along the length of the 50 ohm microstrip.
7. The vertical SMP connector-microstrip transition structure of claim 1, wherein a spacing between the microstrip impedance transformation circuit and the microstrip port standing wave debugging circuit is 0.1 mm.
8. The vertical SMP connector-microstrip transition structure of claim 7, wherein the cavity is a rectangular cavity and comprises 4 side surfaces, 1 top surface and 1 bottom surface, the vertical SMP connector, the microstrip impedance transformation circuit and the microstrip port standing wave debugging circuit are fixed on the bottom surface of the cavity by sintering, the distance from the substrate of the microstrip impedance transformation circuit to the side surface of the cavity is 0.1mm, and the distance from the substrate of the microstrip port standing wave debugging circuit to the side surface of the cavity is 0.1 mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020240210.9U CN211700522U (en) | 2020-03-03 | 2020-03-03 | Vertical SMP joint-to-microstrip structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020240210.9U CN211700522U (en) | 2020-03-03 | 2020-03-03 | Vertical SMP joint-to-microstrip structure |
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| Publication Number | Publication Date |
|---|---|
| CN211700522U true CN211700522U (en) | 2020-10-16 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202020240210.9U Active CN211700522U (en) | 2020-03-03 | 2020-03-03 | Vertical SMP joint-to-microstrip structure |
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| CN (1) | CN211700522U (en) |
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- 2020-03-03 CN CN202020240210.9U patent/CN211700522U/en active Active
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