CN211700277U - High-resolution Micro-LED display screen - Google Patents

Abstract

The utility model relates to a high resolution Micro-LED display screen, it includes the substrate, forms the substrate on a plurality of luminescence unit and a plurality of PM drive IC, it is a plurality of luminescence unit be divided into a plurality of sprites, it is a plurality of the sprite respectively by each PM drive IC drive, and each sprite contains a row of N of M LED luminescence unit of being listed as respectively, lie in the LED luminescence unit's of the same line negative pole metal interconnect among every sprite and with PM drive IC's first pin electricity connect, lie in the LED luminescence unit's of the same line positive pole metal interconnect among every sprite and with PM drive IC's second pin electricity connect. The utility model discloses a little display screen has the advantage of low cost, high yield, high resolution.

Description

High-resolution Micro-LED display screen

Technical Field

The utility model belongs to the technical field of little the display, in particular to Micro-LED display screen and manufacturing method thereof.

Background

With the rapid development of the VR/AR (virtual reality/augmented reality) industry, display chips suitable for VR/AR have been increasing at a high speed. Since VR/AR systems are currently implemented in many head-mounted devices, the display suitable for these devices must be a micro-display chip, typically with a diagonal dimension of up to 1 inch, most often 0.6-0.7 inches. The existing Micro display chips include LCOS, Micro-OLED and Micro-LED, however, when the chips face AR application, the brightness of the LCOS and the Micro-OLED chips cannot meet the actual requirement, so that the display chips suitable for the AR system mainly use the Micro-LED Micro display chips. Micro-LED (light emitting diode) Micro technology refers to technology which transfers a large amount of addressing after traditional LED array and Micro-LED to a circuit substrate to form ultra-small-pitch LEDs, and further Micro-reduces the length of the millimeter-level LEDs to the micron level so as to achieve ultra-high pixel and ultra-high resolution, and theoretically can adapt to screens of various sizes.

The method for realizing Micro-LED Micro-display in the prior art comprises two technical routes of mass transfer and flip-chip bonding, but the yield of the mass transfer and the flip-chip bonding is very low at present, and the mass production requirement of Micro-LED Micro-display chips cannot be met. In addition, the current Micro-LED Micro display mostly adopts an AM (active matrix) driving circuit prepared on a Si wafer substrate, and the cost is relatively high.

The traditional PM (passive matrix) driving mode has the advantages of simple structure and low cost, but has the defect of low information content and is limited by a driving IC, and the driving mode ensures that the corresponding display screen has low resolution and can only be applied to simple display, for example, the display screen manufactured by the traditional amorphous silicon TFT or polysilicon switch component can not be applied to an AR system.

Disclosure of Invention

In order to solve the technical problem, the utility model aims at providing an adopt the high resolution Micro-LED Micro display screen of PM drive mode preparation.

In order to achieve the above purpose, the utility model adopts the following technical scheme: a high-resolution Micro-LED display screen comprises a substrate, a plurality of light emitting units formed on the substrate and a plurality of PM drive ICs, wherein the light emitting units are divided into a plurality of sub-pictures, the sub-pictures are respectively driven by the PM drive ICs, each sub-picture respectively comprises M rows and N columns of LED light emitting units, cathode metals of the LED light emitting units positioned on the same row in each sub-picture are mutually connected and electrically connected with a first pin of the PM drive ICs, and anode metals of the LED light emitting units positioned on the same column in each sub-picture are mutually connected and electrically connected with a second pin of the PM drive ICs.

In the above aspect, it is further preferable that M and N are both natural numbers of 2 or more.

In the above scheme, it is further preferable that the Micro-LED display screen includes 2 or more sub-regions.

In the above aspect, it is further preferable that the substrate is a sapphire substrate.

In the foregoing aspect, it is further preferable that the LED light-emitting unit includes an N-GaN layer, a QW layer, and a P-GaN layer sequentially formed on the substrate.

The utility model discloses a prepare the same PM drive IC driven Micro-LED of a plurality of on same LED epitaxial substrate and show the screen a little to adopt the piecemeal means that shows the concatenation together, reached the effect that realizes the high resolution Micro-LED and show the screen body a little.

The utility model has the advantages of high production yield, low cost and high resolution.

Drawings

Fig. 1 is a display driving schematic diagram of the micro display screen of the present invention;

fig. 2-7 show the flow of the manufacturing process of the micro display screen of the present invention in steps;

wherein: 1. a substrate; 10. a light emitting unit; 11. an N-type semiconductor layer; 12. a P-type semiconductor layer; 13. a light emitting layer; 14. a planarization layer; 15. a cathode metal channel; 16. a cathode metal; 17. an anode metal channel; 18. an insulating layer; 19. an anode metal; 20. a driver IC; 30. and (5) sub-pictures.

Detailed Description

To explain the technical content, structural features, achieved objects and functions of the present invention in detail, the following detailed description is made with reference to the accompanying drawings. The embodiment provides an ultra-high resolution Micro-LED Micro display screen, wherein fig. 1 is a driving schematic diagram of the display screen, and fig. 2 to 7 show a manufacturing process of the Micro-LED in steps.

In fig. 7, a top view and a cross-sectional view of the finished Micro-LED can be seen, and the display screen can be seen to comprise a substrate 1, a plurality of LED light emitting units 10 formed on the substrate 1 and arranged in an array, and a plurality of PM driver ICs 20. Referring to fig. 2, the light emitting unit 10 includes an N-type semiconductor layer 11, a light emitting layer 13 and a P-type semiconductor layer 12 sequentially grown on a substrate 1, wherein the N-type semiconductor layer is made of N-GaN, the P-type semiconductor layer is made of P-GaN, and the light emitting layer is made of MQW. The substrate may be glass, sapphire, a silicon-based substrate, or a germanium-based substrate, among others.

The light emitting units 10 are divided into W sub-regions, where W is 4 in this embodiment, 2 in the horizontal direction, and 2 in the vertical direction. The sub-regions correspond to one sub-frame 30 when corresponding to the display frame, and each sub-frame 30 corresponds to and is driven by one of the PM driver ICs 20. After receiving the display picture, the display screen is firstly divided into W pictures which are respectively sent to W drive ICs, and then the drive ICs respectively display the corresponding pictures on the corresponding sub-pictures to form a complete picture.

Preferably, the Micro-LED display screen can divide the display screen into 2, 6 or 8 sub-screens according to actual needs, and the sub-screens can be distributed in a matrix form or arranged in a line. The number of the LED light emitting units corresponding to each driving IC may be the same or different.

Fig. 1 is a schematic structural view of a portion of a Micro display screen according to an embodiment of the present invention, which can be extended in two directions in an array form in a two-dimensional plane to form a Micro-LED Micro display screen having a certain size.

Each PM drive IC has a first pin connected to the cathode metal of the LED light-emitting unit and a second pin connected to the anode metal of the LED light-emitting unit, each sub-frame includes M rows and N columns of LED light-emitting units 10, the cathode metals 16 of the LED light-emitting units 10 in the same row in each sub-frame 30 are connected to each other, and the anode metals of the LED light-emitting units 10 in the same column in each sub-frame 30 are connected to each other. The utility model discloses a resolution ratio that the display screen can reach = (the quantity of horizontal sprite is multiplied by the quantity of the horizontal drive IC LED luminescence unit) × (the quantity of vertical sprite is multiplied by the quantity of the vertical drive IC LED luminescence unit). Taking this embodiment as an example, it will be able to achieve 2M × 2N resolution, and assuming that the highest resolution that can be achieved by a single driver IC is 512 × 512, this embodiment can achieve 1024 × 1024 resolution. Meanwhile, in the implementation process, the size of the required pixel can be selected according to the requirements of practical application, for example, a pixel of 10 micrometers is taken as an example, the PPI can reach 2540, and the requirement of micro-display on high pixel density is met.

Preferably, for obtaining the Micro-LED display screen that is fit for AR size and resolution ratio size, the utility model discloses a value of M and N is more than or equal to 2's natural number.

The utility model discloses a manufacturing process of high resolution Micro-LED display screen as follows:

s1, referring to FIG. 2, forming a plurality of patterned LED light-emitting units 10 on a semiconductor substrate 1, dividing the plurality of patterned LED light-emitting units into 4 sub-regions A, B, C, D, and enabling each sub-region to respectively contain 2 rows and 2 columns of the LED light-emitting units 10, wherein each LED light-emitting unit 10 comprises an N-type semiconductor layer 11, a light-emitting layer 13 and a P-type semiconductor layer 12 which are sequentially grown on the substrate 1;

referring to fig. 3, after the step S1, forming a planarization layer 14 on the LED light-emitting unit 10 using an insulating material is further included.

S2, with reference to FIG. 4, punching a hole on the planarization layer 14 to form a cathode metal channel 15; referring to fig. 5, the cathode metal 16 wiring is completed and the cathode metals of each row of LED lighting units located in the same sub-area are interconnected, while the cathode metals of each row of LED lighting units located in different sub-areas are disconnected;

s3, referring to FIG. 6, forming an insulating layer 18 on the cathode metal 16, and punching holes on the insulating layer 18 to form an anode metal channel 17; referring to fig. 7, the anode metal 19 wiring is completed, so that the anode metals of each column of LED light-emitting units in the same sub-area are interconnected, and the anode metals of each column of LED light-emitting units in different sub-areas are disconnected;

s4, referring to fig. 1, a plurality of LED light emitting units 10 are bonded to a plurality of driving ICs, such that each sub-area is configured with a PM driving IC 20.

The foregoing shows and describes the general principles, essential features, and advantages of the invention. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, which are given by way of illustration only, and that various changes and modifications may be made without departing from the spirit and scope of the invention as defined by the appended claims, specification and equivalents thereof.

Claims (5)

1. A high-resolution Micro-LED display screen is characterized by comprising a substrate, a plurality of light emitting units and a plurality of PM driving ICs, wherein the light emitting units are formed on the substrate, the light emitting units are divided into a plurality of sub-pictures, the sub-pictures are respectively driven by the PM driving ICs, each sub-picture respectively comprises M rows and N columns of LED light emitting units, cathode metals of the LED light emitting units positioned on the same row in each sub-picture are mutually connected and electrically connected with a first pin of the PM driving IC, and anode metals of the LED light emitting units positioned on the same column in each sub-picture are mutually connected and electrically connected with a second pin of the PM driving IC.

2. A high resolution Micro-LED display screen according to claim 1, wherein: m and N are both natural numbers greater than or equal to 2.

3. A high resolution Micro-LED display screen according to claim 1, wherein: the Micro-LED display screen comprises more than 2 sub-pictures.

4. A high resolution Micro-LED display screen according to claim 1, wherein: the substrate is a sapphire substrate.

5. A high resolution Micro-LED display screen according to claim 1, wherein: the LED light-emitting unit comprises an N-GaN layer, a QW layer and a P-GaN layer which are sequentially formed on the substrate.

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