CN211629120U - Silicon-based heterojunction solar cell structure - Google Patents
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- CN211629120U CN211629120U CN202020514076.7U CN202020514076U CN211629120U CN 211629120 U CN211629120 U CN 211629120U CN 202020514076 U CN202020514076 U CN 202020514076U CN 211629120 U CN211629120 U CN 211629120U
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Abstract
The utility model relates to a silicon-based heterojunction solar cell structure, which comprises a layered structure from one side surface to the other side surface; the layered structure comprises an upper electrode, a TCO transparent conductive film, a P-type amorphous silicon layer, an intrinsic amorphous silicon layer, an N-type monocrystalline silicon piece, an intrinsic amorphous silicon layer, an N-type amorphous silicon layer, a TCO transparent conductive film and a lower electrode; one or more layers of nitride films are added between the upper electrode and the TCO transparent conductive film as well as between the TCO transparent conductive film and the lower electrode; the nitride film is deposited on the upper and lower surfaces of the TCO transparent conductive film. The utility model discloses effectively reduced TCO film thickness, reduced TCO in the preparation process to the damage of surface substrate amorphous silicon film, solved simultaneously in the original HJT solar cell structure single TCO transparent conductive film exist the parasitism absorb with effectively block the contradiction of movable free ion.
Description
Technical Field
The utility model relates to a solar cell produces the manufacturing field, in particular to silicon-based heterojunction solar cell structure.
Background
The development goal of the current photovoltaic industry is to reduce cost, improve photoelectric conversion efficiency and realize low-price on-line power generation in the early days. Among solar cells, the HJT solar cell has the characteristics of high efficiency, low temperature coefficient, low light attenuation, double-sided power generation, and the like, and therefore, the HJT solar cell is regarded as one of important directions for achieving the goal of photovoltaic flat-rate internet access.
At present, the HJT solar cell is limited by the factors of high preparation cost, narrow process technology window, etc., and the large-scale commercial application of the HJT solar cell has not yet been realized, for example, the Transparent Conductive Oxide (TCO) film is one of the key factors limiting the further development of the HJT solar cell. TCOs used in the HJT solar cell mainly comprise ITO/IWO/IMO/AZO and other materials, and the materials contain rare metals, and the rare metals are expensive, low in storage capacity and non-renewable.
The two methods inevitably cause damage to the bottom layer doped amorphous silicon thin film in different degrees in the process of preparing TCO with a certain thickness, so that the local characteristic of the substrate surface thin film is poor, the quality of the TCO thin film is influenced, the performance of the solar cell is further influenced, the performance of the cell is reduced, and the problems of cell performance reduction, such as increase of interface defects of the substrate thin film, PN junction damage, local area electric leakage and the like are caused.
In addition, the TCO film material also has the contradiction problem between parasitic absorption and movable free ion blocking, parasitic absorption is easy to generate when the TCO film is deposited too thick, so that the light utilization rate of the HJT solar cell is reduced, otherwise, external movable free ions cannot be effectively blocked, and enter the HJT solar cell body, so that a defect recombination center is generated to influence the electrical property and the stability of the HJT solar cell.
SUMMERY OF THE UTILITY MODEL
The utility model discloses a silicon-based heterojunction solar cell structure to prior art not enough.
The utility model discloses the technical scheme who adopts as follows:
a silicon-based heterojunction solar cell structure comprises a layered structure from one side surface to the other side surface; the layered structure comprises an upper electrode, a TCO transparent conductive film, a P-type amorphous silicon layer, an intrinsic amorphous silicon layer, an N-type monocrystalline silicon piece, an intrinsic amorphous silicon layer, an N-type amorphous silicon layer, a TCO transparent conductive film and a lower electrode; adding one or more layers of nitride films between the upper electrode and the TCO transparent conductive film and between the TCO transparent conductive film and the lower electrode; the nitride thin film is deposited on the upper surface and the lower surface of the TCO transparent conductive thin film.
The method is further characterized in that: the nitride film has a thickness of 30nm to 70nm and a refractive index of 2.0 to 2.15.
The method is further characterized in that: the thickness of the TCO transparent conductive film is 20nm-50 nm; the TCO transparent conductive film is made of any one of ITO, IWO, IMO and AZO.
The method is further characterized in that: the thickness of the N-type monocrystalline silicon piece is 120-150 mu m.
The method is further characterized in that: the thickness of the intrinsic amorphous silicon layer is 5 nm-10 nm.
The method is further characterized in that: the thickness of the N-type amorphous silicon layer is 10 nm-20 nm.
The method is further characterized in that: the thickness of the P-type amorphous silicon layer is 20 nm-30 nm.
The utility model has the advantages as follows:
1. the utility model discloses replaced the transparent conductive film structure of original single TCO of HJT solar cell with the transparent conductive film composite layer of nitride and TCO, effectively reduced the thickness of TCO thin layer.
2. The utility model discloses reduced TCO to the damage of surface substrate amorphous silicon film in the preparation process, solved simultaneously in the original HJT solar cell structure that single TCO transparent conductive film exists parasitic absorption and effectively blocks the contradiction of movable free ion.
3. The nitride and TCO transparent conductive film combined layer can play a good role in antireflection, increase light absorption and improve cell efficiency, and is suitable for application of large-scale production.
4. The utility model discloses a good reflection-reducing optical film is constituteed to one deck or multilayer nitride film and TCO transparent conductive film can reduce incident light reflectivity, increases HJT solar cell light absorption, thereby improves the photoproduction electric current and promotes photoelectric conversion efficiency.
5. The utility model discloses reduce TCO transparent conductive film raw materials use amount, reduce HJT solar cell cost of manufacture, be favorable to the extensive commercial application of HJT solar cell and promote
Drawings
Fig. 1 is a schematic view of the present invention.
Fig. 2 is the schematic diagram of the nitride film after scribing and grooving by laser in the preparation process of the utility model.
In the figure: 1. an upper electrode; 2. a nitride film; 3. a TCO transparent conductive film; 4. a P-type amorphous silicon layer; 5. an intrinsic amorphous silicon layer; 6. an N-type monocrystalline silicon wafer; 7. an N-type amorphous silicon layer; 8. and a lower electrode.
Detailed Description
The foregoing and other features, aspects and utilities of the present invention will be apparent from the following detailed description of the embodiments, which is to be read in connection with the accompanying drawings. Directional terms as referred to in the following examples, for example: up, down, left, right, front or rear, etc., are simply directions with reference to the drawings. Therefore, the directional terminology used is for the purpose of description and is not intended to be limiting, and moreover, like reference numerals will be used to refer to like elements throughout.
The following describes a specific embodiment of the present embodiment with reference to the drawings.
Fig. 1 is a schematic view of the present invention. As shown in fig. 1, a silicon-based heterojunction solar cell structure comprises a layered structure from one side to the other side. The layered structure comprises an upper electrode 1, a TCO transparent conductive film 3, a P-type amorphous silicon layer 4, an intrinsic amorphous silicon layer 5, an N-type monocrystalline silicon piece 6, an intrinsic amorphous silicon layer 5, an N-type amorphous silicon layer 7, a TCO transparent conductive film 3 and a lower electrode 8. One or more layers of nitride films 2 are added between the upper electrode 1 and the TCO transparent conductive film 3, and between the TCO transparent conductive film 3 and the lower electrode 8. The nitride film 2 is deposited on the upper and lower surfaces of the TCO transparent conductive film 3.
The nitride film 2 has a thickness of 30 to 70nm and a refractive index of 2.0 to 2.15. The nitride film 2 is made of one or a combination of different materials of SiNx, SiONx, SiCNx. The thickness of the TCO transparent conductive film 3 is 20nm-50 nm. The TCO transparent conductive film 3 is made of any one of ITO, IWO, IMO and AZO. The thickness of the N-type monocrystalline silicon wafer 6 is about 120 μm to 150. mu.m. The thickness of the intrinsic amorphous silicon layer 5 is 5nm to 10 nm. The thickness of the N-type amorphous silicon layer 7 is 10 nm-20 nm. The thickness of the P-type amorphous silicon layer 4 is 20nm to 30 nm.
The manufacturing method of the utility model is as follows:
a. the N-type monocrystalline silicon wafer 6 is subjected to surface texture to form a pyramid shape, so that the surface reflection of the N-type monocrystalline silicon wafer is reduced, and the surface is cleaned to remove impurities and metal ions.
b. The intrinsic amorphous silicon layers 5 of the upper and lower surfaces are prepared by a vapor deposition method, and the thickness of the intrinsic amorphous silicon layer 5 is 5nm to 10 nm.
c. And preparing an N-type amorphous silicon layer 7 on the intrinsic amorphous silicon layer 5 on the lower surface by using a vapor deposition method, wherein the thickness of the N-type amorphous silicon layer 7 is 10 nm-20 nm.
d. Similarly, a P-type amorphous silicon layer 4 is formed on the intrinsic amorphous silicon layer 5 on the upper surface by a vapor deposition method, and the thickness of the P-type amorphous silicon layer 4 is 20nm to 30 nm.
e. Depositing TCO transparent conductive thin films 3 on the surface of the P-type amorphous silicon layer 4 and the surface of the N-type amorphous silicon layer 7 by adopting a PVD (physical vapor deposition) or RPD (rapid plasma deposition) method, wherein the TCO transparent conductive thin films 3 can be any one of ITO (indium tin oxide), IWO (indium tin oxide), IMO (indium tin oxide) and AZO (aluminum zinc oxide), and the thickness of the TCO transparent conductive thin films 3 is 20nm-50 nm.
f. One or more layers of nitride films 2 are respectively deposited on the upper surface and the lower surface of the TCO transparent conductive film 3 by adopting a PECVD (chemical vapor deposition) mode, and the deposition temperature of the nitride films 2 is less than or equal to 400 ℃. The nitride film 2 can be formed by combining one or more different materials of SiNx, SiONx and SiCNx, the thickness of the nitride film 2 is 30nm-70nm, the refractive index is 2.0-2.15, and the number of layers of the nitride film 2 is more than or equal to 1.
g. Adopting a low-damage picosecond laser to scribe the nitride dielectric films on the upper surface and the lower surface to open the grooves in the local area of the nitride dielectric films, wherein the laser scribing quantity is 100 plus 150, and the width is as follows: 30-100 μm and 30-70nm in depth.
h. And finally, sintering and solidifying the upper electrode 1 and the lower electrode 8 formed on the silicon chip at a low temperature to form the complete HJT solar cell.
[ example 1 ]: corroding an N-type monocrystalline silicon wafer 6 with the thickness of 130 mu m by using an alkaline solution to form a pyramid on the surface, and simultaneously cleaning the surface to remove impurities and metal ions, wherein the process temperature is 60-80 ℃, and the corrosion time is 10-20 min; preparing an intrinsic amorphous silicon layer 5, an N-type amorphous silicon layer 7 and a P-type amorphous silicon layer 4 on the upper surface and the lower surface of an N-type monocrystalline silicon piece 6 respectively in sequence by adopting a plasma enhanced chemical vapor deposition method, wherein the thicknesses of the intrinsic amorphous silicon layer 5, the N-type monocrystalline silicon piece 6 and the N-type amorphous silicon layer 7 are all set randomly within the range of 5 nm-30 nm, and the thickness of the P-type amorphous silicon layer 4 is 20 nm-30 nm; depositing TCO transparent conductive films 3 on the upper surface and the lower surface respectively by adopting a magnetron sputtering method, wherein the TCO transparent conductive films 3 are made of any one of ITO, IWO, IMO and AZO, the thickness is set arbitrarily within the range of 20nm-50nm, and the selected material in the embodiment is ITO and has the thickness of 20 nm; the nitride film 2 is deposited by a PECVD method, the nitride film 2 is one or more layers of nitrogen, the nitride film 2 can be formed by combining one or more different materials of SiNx, SiONx and SiCNx, the thickness of the nitride film 2 is 30nm-70nm, the refractive index is 2.0-2.15, the selected material in the embodiment is a layer of SiNx film material, the thickness is 50nm, and the refractive index is 2.10. Then, a picosecond laser is adopted to carry out scribing and grooving, the laser scribing quantity is 100-150-. The present implementation was chosen for a scribe number of 110, a width of 40 μm and a depth of 50 nm. And finally, sintering and solidifying the upper electrode 1 and the lower electrode 8 formed on the silicon chip at a low temperature to form the complete HJT solar cell.
[ example 2 ]: corroding an N-type monocrystalline silicon wafer 6 with the thickness of 150 mu m by using an alkaline solution to form a pyramid on the surface, and simultaneously cleaning the surface to remove impurities and metal ions, wherein the process temperature is 60-80 ℃, and the corrosion time is 10-20 min; preparing an intrinsic amorphous silicon layer 5, an N-type amorphous silicon layer 7 and a P-type amorphous silicon layer 4 on the upper surface and the lower surface of an N-type monocrystalline silicon piece 6 respectively in sequence by adopting a plasma enhanced chemical vapor deposition method, wherein the thicknesses of the N-type monocrystalline silicon piece 6, the intrinsic amorphous silicon layer 5 and the N-type amorphous silicon layer 7 are all set randomly within the range of 5 nm-30 nm, and the thickness of the P-type amorphous silicon layer is 20 nm-30 nm; depositing TCO transparent conductive films 3 on the upper surface and the lower surface respectively by adopting a magnetron sputtering method, wherein the TCO transparent conductive films 3 are made of any one of ITO (indium tin oxide), IWO (indium tin oxide), IMO (indium tin oxide) and AZO (aluminum zinc oxide), the thickness of the TCO transparent conductive films 3 is set at will in the range of 20nm-50nm, and the selected material of the TCO transparent conductive films 3 in the embodiment is IWO (indium tin oxide), and the thickness is 30 nm; the nitride film 2 is deposited by a PECVD method, the number of layers of the nitride film 2 is one or more layers of nitrogen, the nitride film 2 can be formed by combining one or more different materials of SiNx, SiONx and SiCNx, the thickness is 30nm-70nm, the refractive index is 2.0-2.15, the selected material in the embodiment is one layer of SiONx film material, the thickness is 40nm, and the refractive index is 2.08. Then, a picosecond laser is adopted to carry out scribing and grooving, the laser scribing quantity is 100-150-. The number of scribe lines 110 is selected in this embodiment, the width is 40 μm, and the depth is 40 nm. And finally, sintering and solidifying the upper electrode 1 and the lower electrode 8 formed on the silicon chip at a low temperature to form the complete HJT solar cell.
[ example 3 ]: corroding an N-type monocrystalline silicon wafer 6 with the thickness of 130 mu m by using an alkaline solution to form a pyramid on the surface, and simultaneously cleaning the surface to remove impurities and metal ions, wherein the process temperature is 60-80 ℃, and the corrosion time is 10-20 min; preparing an intrinsic amorphous silicon layer 5, an N-type amorphous silicon layer 7 and a P-type amorphous silicon layer 4 on the upper surface and the lower surface of an N-type monocrystalline silicon piece 6 respectively in sequence by adopting a plasma enhanced chemical vapor deposition method, wherein the thicknesses of the N-type monocrystalline silicon piece 6, the intrinsic amorphous silicon layer 5 and the N-type amorphous silicon layer 7 are all set randomly within the range of 5 nm-30 nm, and the thickness of the P-type amorphous silicon layer is 20 nm-30 nm; depositing TCO transparent conductive films 3 on the upper surface and the lower surface respectively by adopting a magnetron sputtering method, wherein the TCO transparent conductive films 3 are made of any one of ITO (indium tin oxide), IWO (indium tin oxide), IMO (indium tin oxide) and AZO (aluminum zinc oxide), and the thickness of the TCO transparent conductive films is set within the range of 20nm-50nm at will, and the selected material in the embodiment is ITO and has the thickness of 20 nm; the nitride dielectric film is deposited by a PECVD method, the number of the film layers is one or more layers of nitrogen, the nitride film can be formed by combining one or more different materials of SiNx, SiONx and SiCNx, the thickness is 30-70nm, the refractive index is 2.0-2.15, the selected material in the embodiment is a two-layer SiNx/SiONx film material, the equivalent thickness is 60nm, and the refractive index is 2.09. Then, a picosecond laser is adopted for scribing and grooving, the laser scribing quantity is 100-: 30-100 μm and 30-70nm in depth. The number of scribe lines 120, the width of 40 μm, and the depth of 60nm were selected in this example. And finally, sintering and solidifying the upper electrode 1 and the lower electrode 8 formed on the silicon chip at a low temperature to form the complete HJT solar cell.
Example 4: corroding an N-type monocrystalline silicon wafer 6 with the thickness of 130 mu m by using an alkaline solution to form a pyramid on the surface, and simultaneously cleaning the surface to remove impurities and metal ions, wherein the process temperature is 60-80 ℃, and the corrosion time is 10-20 min; preparing an intrinsic amorphous silicon layer 5, an N-type amorphous silicon layer 7 and a P-type amorphous silicon layer 4 on the upper surface and the lower surface of an N-type monocrystalline silicon piece 6 respectively in sequence by adopting a plasma enhanced chemical vapor deposition method, wherein the thicknesses of the N-type monocrystalline silicon piece 6, the intrinsic amorphous silicon layer 5 and the N-type amorphous silicon layer 7 are all set randomly within the range of 5 nm-30 nm, and the thickness of the P-type amorphous silicon layer 4 is 20 nm-30 nm; depositing TCO transparent conductive films 3 on the upper surface and the lower surface respectively by adopting a magnetron sputtering method, wherein the TCO transparent conductive films 3 are made of any one of ITO (indium tin oxide), IWO (IWO), IMO (indium tin oxide) and AZO (aluminum zinc oxide), and the thickness of the TCO transparent conductive films is set within the range of 20nm-50nm at will, and the selected material in the embodiment is ITO and has the thickness of 30 nm; the nitride film 2 is deposited by a PECVD method, the number of layers of the nitride film 2 is one or more layers of nitrogen, the nitride film 2 can be formed by combining one or more different materials of SiNx, SiONx and SiCNx, the thickness of the nitride film 2 is 30nm-70nm, the refractive index is 2.0-2.15, the selected material in the embodiment is three layers of SiNx/SiONx/SiCNx film materials, the equivalent thickness is 50nm, and the refractive index is 2.10. Then, a picosecond laser is adopted to carry out scribing and grooving, the laser scribing quantity is 100-150-. The number of scribe lines 120, the width of 50 μm, and the depth of 50nm were selected in this example. And finally, sintering and solidifying the upper electrode 1 and the lower electrode 8 formed on the silicon chip at a low temperature to form the complete HJT solar cell. The above description is for the purpose of explanation and not limitation of the invention, which is defined in the claims, and any modifications may be made without departing from the basic structure of the invention.
Claims (7)
1. A silicon-based heterojunction solar cell structure is characterized in that: comprising a layered structure from one side to the other; the layered structure comprises an upper electrode (1), a TCO transparent conductive film (3), a P-type amorphous silicon layer (4), an intrinsic amorphous silicon layer (5), an N-type monocrystalline silicon wafer (6), an intrinsic amorphous silicon layer (5), an N-type amorphous silicon layer (7), the TCO transparent conductive film (3) and a lower electrode (8); adding one or more nitride films (2) between the upper electrode (1) and the TCO transparent conductive film (3), and between the TCO transparent conductive film (3) and the lower electrode (8); the nitride film (2) is deposited on the upper surface and the lower surface of the TCO transparent conductive film (3).
2. The silicon-based heterojunction solar cell structure of claim 1, wherein: the thickness of the nitride film (2) is 30-70nm, and the refractive index is 2.0-2.15.
3. The silicon-based heterojunction solar cell structure of claim 1, wherein: the thickness of the TCO transparent conductive film (3) is 20nm-50 nm; the TCO transparent conductive film (3) is made of any one of ITO, IWO, IMO and AZO.
4. The silicon-based heterojunction solar cell structure of claim 1, wherein: the thickness of the N-type monocrystalline silicon piece (6) is 120-150 mu m.
5. The silicon-based heterojunction solar cell structure of claim 1, wherein: the thickness of the intrinsic amorphous silicon layer (5) is 5 nm-10 nm.
6. The silicon-based heterojunction solar cell structure of claim 1, wherein: the thickness of the N-type amorphous silicon layer (7) is 10 nm-20 nm.
7. The silicon-based heterojunction solar cell structure of claim 1, wherein: the thickness of the P-type amorphous silicon layer (4) is 20 nm-30 nm.
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| CN114649422A (en) * | 2020-12-17 | 2022-06-21 | 浙江爱旭太阳能科技有限公司 | Silicon-based heterojunction solar cell structure and preparation method |
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| CN114649422A (en) * | 2020-12-17 | 2022-06-21 | 浙江爱旭太阳能科技有限公司 | Silicon-based heterojunction solar cell structure and preparation method |
| CN114649422B (en) * | 2020-12-17 | 2024-05-10 | 浙江爱旭太阳能科技有限公司 | Silicon-based heterojunction solar cell structure and preparation method thereof |
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