CN211595781U - Second-generation high-temperature superconducting strip metal sputtering target protection device - Google Patents
Second-generation high-temperature superconducting strip metal sputtering target protection device Download PDFInfo
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- CN211595781U CN211595781U CN202020275308.8U CN202020275308U CN211595781U CN 211595781 U CN211595781 U CN 211595781U CN 202020275308 U CN202020275308 U CN 202020275308U CN 211595781 U CN211595781 U CN 211595781U
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Abstract
The utility model relates to a magnetron sputtering technical field, concretely relates to second generation high temperature superconducting strip metal sputtering target protection device, protection device is provided with the protection cavity including protection casing, lift drive and magnetron sputtering rifle in the protective housing, and the magnetron sputtering rifle sets up in the protection cavity, and the bottom of protection casing is provided with the slide valve, the slide valve is used for sealing the protection cavity, lift drive sets up the top at the protection casing, the magnetron sputtering rifle passes through the telescopic link and is connected with lift drive. The utility model discloses a target on the magnetron sputtering rifle is installed in the protection cavity protection, lets the target be in the vacuum protection state of protection cavity, avoids the target oxidation at the in-process of changing substrate or baseband, reduces to trade the relevant influence of substrate sample in-process target oxidation, and the high quality preparation research to promoting easy oxidation target, especially second generation high temperature superconducting strip metal target has the significance.
Description
Technical Field
The utility model relates to a magnetron sputtering technical field, concretely relates to second generation high temperature superconducting tape metal sputtering target protection device.
Background
Superconducting technology, particularly high temperature superconducting technology, has received increasing attention from the high-tech industry since the 21 st century. With YBa2Cu3O7The second generation high temperature superconducting tapes represented by- (YBCO) have irreplaceable advantages in the field of strong electricity, and comprise high temperature superconducting generators, high temperature superconducting energy storage, high temperature superconducting magnets and the like which have incomparable advantages compared with conventional cables. The second generation high temperature superconducting tape mainly faces the disadvantages of high scale cost, adoption of a film preparation mode to obtain biaxial texture and the like, and is an important obstacle for commercial use at present. The preparation method of the superconducting layer of the second-generation high-temperature superconducting tape at present mainly comprises the following steps: metal organic vapor deposition (MOCVD), metal organic chemical deposition (MOD), Pulsed Laser Deposition (PLD), reactive thermal evaporation (RCE-DR). The above methods have been proved to be capable of being used as a method for preparing a superconducting layer of a second-generation high-temperature superconducting tape, but the above methods have respective advantages and disadvantages. The magnetron sputtering technology is a method for preparing a high-temperature superconducting layer at high speed, which is independently provided by people. Compared with the ceramic ReBCO target, the metal target has the advantages of low cost, high deposition rate, high sputtering stability and the like. The technical problems of high preparation cost and difficulty in large-scale preparation in the preparation of the second-generation high-temperature superconducting tape at present can be effectively solved. The direct current magnetron sputtering uses an alloy target material or a mosaic target, and based on the prior art, because the melting points of Y (Re), Ba and Cu have larger differences, the alloy target with uniform components is difficult to be smelted, and the mosaic target is the optimal choice for preparing the multi-element oxide film by adopting the direct current magnetron sputtering.
In the existing sputtering device, for example, a novel magnetron sputtering device disclosed in chinese patent publication No. CN209227051U includes a target material and a substrate, which are located in a chamber, and are movable back and forth, a protection valve is provided right in front of the target material, first solenoids are provided on two sides of a process position of the substrate, respectively, a laser positioner is provided on one side of the first solenoid, which is away from the substrate, corresponding to the process position of the substrate, and both the protection valve and the laser positioner are connected to a controller, and the controller is configured to control the protection valve to open when receiving a signal that the laser positioner detects that the substrate moves to the process position, or else, the protection valve keeps a normally closed state; this novel magnetron sputtering device can improve the target utilization ratio, promotes thick homogeneity of membrane, however, because the Ba target is very easy to oxidize in the air, in the substrate sample process of getting in exchange, the oxidation of target can cause the segregation of composition, influences relevant experimental study and product quality.
Therefore, the utility model redesigns a second generation high temperature superconducting strip metal sputtering target material protection device to protect the target material which is easy to oxidize, and reduces the related influence of the target material which is easy to oxidize in the process of replacing the substrate sample.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to overcome prior art not enough, provide a second generation high temperature superconducting strip metal sputtering target protection device, protection device is provided with the protection cavity including protection casing, lift drive and magnetic control sputter rifle in the protective housing, magnetic control sputter rifle sets up in the protection cavity, and the bottom of protection casing is provided with the slide valve, the slide valve is used for sealing the protection cavity, lift drive sets up the top at the protection casing, the magnetic control sputter rifle passes through the telescopic link and is connected with lift drive. The utility model discloses a target on the magnetron sputtering rifle is installed in the protection cavity protection, lets the target be in the vacuum protection state of protection cavity, avoids the target oxidation at the in-process of changing substrate or baseband, reduces to trade the relevant influence of substrate sample in-process target oxidation, and the high quality preparation research to promoting easy oxidation target, especially second generation high temperature superconducting strip metal target has the significance.
The purpose of the utility model is realized through the following technical scheme:
a high-temperature superconducting strip metal sputtering target material protection device comprises a protection shell, a lifting driving device, a magnetron sputtering gun and a vacuum sputtering chamber, wherein a protection cavity is arranged in the protection shell, the magnetron sputtering gun is arranged in the protection cavity, a gate valve is arranged at the bottom of the protection shell and used for closing or opening the protection cavity, the lifting driving device is arranged at the top of the protection shell, the magnetron sputtering gun is connected with the lifting driving device through a telescopic rod, a through hole for the telescopic rod to penetrate is formed in the top of the protection cavity, a sealing ring is arranged in the through hole, and when the gate valve is opened, the lifting driving device can drive the magnetron sputtering gun to extend out of the protection cavity or retract into the protection cavity; the vacuum sputtering device comprises a vacuum sputtering chamber, a protective shell, a magnetron sputtering gun, a substrate, a vacuumizing device and a vacuum sputtering device, wherein the vacuum sputtering chamber is internally provided with the substrate, the substrate is arranged opposite to the magnetron sputtering gun in the protective shell, a substrate or a base band to be sputtered is placed on the substrate, the vacuumizing device is communicated with the inner cavity of the vacuum sputtering chamber, and the vacuumizing device can vacuumize the vacuum sputtering chamber.
The gate valve controller is matched with the gate valve and is connected with the gate valve for controlling the opening or closing of the gate valve, and the gate valve is an electric gate valve, a pneumatic gate valve or a manual gate valve; when the gate valve adopts an electric gate valve or a pneumatic gate valve, the gate valve controller is an automatic control element; when the gate valve adopts a manual gate valve, the gate valve controller is a manual mechanical control device.
According to the high-temperature superconducting strip metal sputtering target material protection device, the protection shell, the gate valve and the gate valve controller are all arranged outside the vacuum sputtering chamber, the through hole is formed in the joint of the vacuum sputtering chamber and the protection shell, and when the gate valve is opened, the protection cavity in the protection shell can be communicated with the inner cavity of the vacuum sputtering chamber.
Furthermore, a sealing gasket is arranged at the joint of the protection chamber and the inner cavity of the vacuum sputtering chamber, and gas outside the protection shell and the vacuum sputtering chamber can not enter the protection chamber and/or the vacuum sputtering chamber through a through hole formed in the top wall of the vacuum sputtering chamber through the sealing gasket.
Preferably, the protection device for the metal sputtering target material of the high-temperature superconducting strip further comprises a locking mechanism, the locking mechanism is arranged on the protection shell and used for locking the telescopic rod after the telescopic rod moves in place, the locking mechanism comprises a pair of symmetrically arranged locking assemblies, each locking assembly comprises a driving cylinder and a fixed clamping piece, the driving cylinders are arranged on the side walls of the protection shell, and driving shafts of the driving cylinders are connected with the fixed clamping pieces.
According to the preferred scheme, the substrate of the high-temperature superconducting strip metal sputtering target material protection device is arranged at the bottom of an inner cavity of a vacuum sputtering chamber, and the magnetron sputtering gun is arranged at the top of the vacuum sputtering chamber and is opposite to the upper part of the substrate; the vacuumizing device is arranged on the outer side of the top wall of the vacuum sputtering chamber or the outer sides of the left wall and the right wall of the vacuum sputtering chamber;
more preferably, the lifting driving device adopts an electric driving device or a pneumatic driving device, and the starting, stopping, pushing out or retracting of the magnetic control sputtering gun of the lifting driving device is controlled by an electric or pneumatic control valve.
The high-temperature superconducting strip metal sputtering target material protection device further comprises a control module and a power supply, wherein the control module is respectively connected with the vacuumizing device, the lifting driving device, the magnetron sputtering gun and the power supply; the lifting driving device and the vacuumizing device are controlled by the control module, when the gate valve adopts an electric gate valve or a pneumatic gate valve, the gate valve controller is also electrically connected with the control module, and the gate valve is controlled to be opened or closed by the control module, and the controller is arranged in the control module.
Furthermore, the protection device for the metal sputtering target of the high-temperature superconducting strip further comprises a human-computer interaction module, wherein the human-computer interaction module is connected with the control module, the human-computer interaction module is used for a user to input an operation instruction and check the working state information of the equipment, and the control module makes a corresponding response according to the operation instruction.
As a further preferred scheme, the inner sides of the two locking assemblies are both provided with anti-slip pads, and the anti-slip pads are made of plastics, rubber or copper materials.
The utility model has the advantages that: the utility model provides a second generation high temperature superconducting tape metal sputtering target protection device installs the target on the magnetron sputtering rifle through the protection cavity, lets the target be in the vacuum protection state of protection cavity, avoids the target oxidation at the in-process of changing substrate or baseband, reduces and trades the relevant influence of substrate sample in-process target oxidation, prepares the research to promoting the continuous preparation of easy oxidation target, and the high quality of especially second generation high temperature superconducting tape metal target prepares the research and has important meaning.
Drawings
Fig. 1 is a schematic view of the overall structure of the protection device of the present invention;
fig. 2 is a schematic structural diagram of a protection housing, a lifting driving device and a gate valve of the protection device of the present invention, and fig. 3 is a schematic state diagram of the protection device of the present invention when the magnetron sputtering gun is released;
fig. 4 is a schematic view of the protective casing of the protection device according to the present invention.
In the figure, 1-a protective shell, 2-a lifting driving device, 3-a magnetron sputtering gun, 4-a protective chamber, 5-a gate valve, 6-a gate valve controller, 7-a telescopic rod, 8-a locking mechanism, 9-a vacuum sputtering chamber, 10-a vacuumizing device, 11-a substrate and 12-a sealing gasket.
Detailed Description
The technical solution of the present invention is described in further detail below with reference to the accompanying drawings, but the scope of the present invention is not limited to the following description.
As shown in fig. 1 to 4, a second generation high temperature superconducting strip metal sputtering target protection device comprises a protection shell 1, a lifting drive device 2, a magnetron sputtering gun 3 and a vacuum sputtering chamber 9, wherein a protection chamber 4 is arranged in the protection shell 1, the magnetron sputtering gun 3 is arranged in the protection chamber 4, a gate valve 5 is arranged at the bottom of the protection shell 1, the gate valve 5 is used for closing or opening the protection chamber 4, the lifting drive device 2 is arranged at the top of the protection shell 1, the magnetron sputtering gun 3 is connected with the lifting drive device 2 through a telescopic rod 7, a through hole for the telescopic rod 7 to pass through is arranged at the top of the protection chamber 4, specifically as shown in fig. 4, a sealing ring is arranged in the through hole, the periphery of the telescopic rod 7 passes through the inner ring of the sealing ring and keeps the top of the protection chamber 4 sealed through the sealing ring, the sealing ring is made of rubber or plastic. When the gate valve 5 is opened, the lifting driving device 2 can drive the magnetron sputtering gun 3 to extend out of the protection chamber 4 or retract into the protection chamber 4.
Specifically, a gate valve controller 6 matched with the gate valve 5 is further arranged, and the gate valve controller 6 is connected with the gate valve 5 and used for controlling the opening and closing of the gate valve 5. The gate valve 5 is used for closing the protection cavity 4 or opening the protection cavity 4, the gate valve 5 can adopt an electric gate valve, a pneumatic gate valve or a manual gate valve, and when the gate valve 5 adopts the electric gate valve or the pneumatic gate valve, the gate valve controller 6 is an automatic control element and can be integrally or separately arranged with the gate valve 5; when the gate valve 5 adopts a manual gate valve, the gate valve controller 6 is a manual mechanical control device, such as a rotating handle or a drawing handle, and the gate valve controller 6 of the manual gate valve 5 is arranged on the side wall of the gate valve 5, and the structure shown in the attached drawing of the application is a schematic structure of the manual gate valve.
The protective shell 1, the gate valve 5 and the gate valve controller 6 are all arranged outside the vacuum sputtering chamber 9, and in the embodiment, the protective shell 1, the gate valve 5 and the gate valve controller 6 are all arranged outside the top of the vacuum sputtering chamber 9, as shown in fig. 1. The top wall of the vacuum sputtering chamber 9, specifically the joint of the vacuum sputtering chamber 9 and the protection shell 1, is provided with a through hole, through the arrangement of the through hole, when the gate valve 5 is opened, the protection chamber 4 in the protection shell 1 can be communicated with the inner cavity of the vacuum sputtering chamber 9, and the joint of the protection chamber 4 and the inner cavity of the vacuum sputtering chamber 9 is provided with a sealing gasket 12, so that the gas outside the protection shell 1 and the vacuum sputtering chamber 9 can not enter the protection chamber 4 and/or the vacuum sputtering chamber 9 through the through hole arranged on the top wall of the vacuum sputtering chamber 9 through the sealing gasket 12.
In the present embodiment, the substrate 11 is disposed at the bottom of the inner cavity of the vacuum sputtering chamber 9, and the magnetron sputtering gun 3 is disposed at the top of the vacuum sputtering chamber 9 and faces the upper side of the substrate 11.
During use, a substrate or base tape to be sputtered is placed on the base plate 11. A vacuum-pumping device 10 communicated with the inner cavity of the vacuum sputtering chamber 9 is further arranged outside the vacuum sputtering chamber 9, and the vacuum sputtering chamber 9 can be vacuumized through the vacuum-pumping device 10. In the present embodiment, the vacuum evacuation apparatus 10 is provided outside the ceiling wall of the vacuum sputtering chamber 9, but the vacuum evacuation apparatus 10 may be provided outside the left and right walls of the vacuum sputtering chamber 9.
In the actual use process, the gate valve 5 is opened, the lifting driving device 2 is controlled to work, the magnetron sputtering gun 3 is pushed out from the protection chamber 4, then the target material for sputtering is installed on the magnetron sputtering gun 3, the magnetron sputtering gun 3 is retreated into the protection chamber 4, and the gate valve 5 is closed, so that the protection chamber 4 is kept closed. After a substrate or a base band to be sputtered is installed on the substrate 11, the vacuumizing device 10 is opened to vacuumize the vacuum sputtering chamber 9, the gate valve 5 is opened, and the vacuumizing device 10 simultaneously vacuumizes the protective chamber 4 and the vacuum sputtering chamber 9; after the vacuum pumping is finished, controlling the lifting driving device 2 to work, pushing the magnetron sputtering gun 3 out of the protection chamber 4 and pushing the magnetron sputtering gun towards the substrate 11, when the distance between the magnetron sputtering gun 3 and the substrate or the base band reaches a set value, stopping the lifting driving device 2 to work, keeping the magnetron sputtering gun 3 and the substrate or the base band within a set distance range, and then starting the magnetron sputtering gun 3 to work to sputter the substrate or the base band arranged on the substrate 11; after the sputtering is finished, start lift drive arrangement 2 and withdraw the shrinkage of magnetron sputtering rifle 3 in the protection cavity 4, close slide valve 5, protection cavity 4 keeps airtight, and protection cavity 4 still is the vacuum state this moment, through slide valve 5's setting, can let the magnetron sputtering rifle 3 of installing the target be in the vacuum protection state of protection cavity 4, and after once sputtering is accomplished, resume vacuum sputtering room 9 to ordinary pressure, open vacuum sputtering room 9 and change substrate or the baseband on the base plate 11 to avoid installing the target on magnetron sputtering rifle 3 and take place the oxidation.
After the primary sputtering of the substrate or the base band is finished, the vacuum sputtering chamber 9 is opened, the substrate or the base band is replaced, then the vacuum sputtering chamber 9 is closed again, the vacuum sputtering chamber 9 is vacuumized again, after the vacuumization is finished, the gate valve 5 is opened again, the lifting driving device 2 is started to push out the magnetron sputtering gun 3, the magnetron sputtering gun 3 and the substrate or the base band to be sputtered reach a set distance, the secondary sputtering work is started, and the like. The target is precious and extremely easy to oxidize, meanwhile, the consumption of the target is low during each sputtering, the sputtering operation of the substrate or the base band can be repeatedly carried out for a plurality of times after the target is mounted for one time, and in the process of replacing the substrate or the base band in the sputtering operation for a plurality of times, the target can be effectively protected from being in contact with air to cause oxidative damage.
In the present embodiment, the elevation driving device 2 is an electric driving device or a pneumatic driving device, and the elevation driving device 2 is controlled to start, stop, push out, or retract the magnetron sputtering gun 3 by an electric or pneumatic control valve. As a preferred scheme, the second generation high temperature superconducting tape metal sputtering target protection device provided by the application further comprises a control module and a power supply, wherein the control module is respectively connected with the vacuum pumping device 10, the lifting driving device 2, the magnetron sputtering gun 3 and the power supply. The lifting driving device 2 and the vacuumizing device 10 are controlled by the control module, when the gate valve 5 adopts an electric gate valve or a pneumatic gate valve, the gate valve controller 6 is also electrically connected with the control module, the control module is used for controlling the opening or closing of the gate valve 5, and a PLC (programmable logic controller) or other controllers are arranged in the control module.
As a preferred scheme, the second generation high temperature superconducting tape metal sputtering target protection device provided by the application further comprises a human-computer interaction module, and the human-computer interaction module is connected with the control module. The human-computer interaction module is used for a user to input a control instruction and check the working state information of the equipment, and the control module makes a corresponding response according to the control instruction.
Specifically, the second generation high temperature superconducting tape metal sputtering target protection device provided by the application further comprises a locking mechanism 8, wherein the locking mechanism 8 is arranged on the protection shell 1 and used for positioning and locking the telescopic rod 7 after the telescopic rod 7 moves in place. When adjusting the interval between magnetron sputtering rifle 3 and substrate or the baseband, lift drive arrangement 2 promotes magnetron sputtering rifle 3 through telescopic link 7 and reciprocates, treats that magnetron sputtering rifle 3 moves when reaching the target interval with the interval of substrate or baseband, and lift drive arrangement 2 stops working, and locking mechanical system 8 holds fixed telescopic link 7 tightly simultaneously, prevents that telescopic link 7 from producing the aversion to further stabilize and fix the interval between magnetron sputtering rifle 3 and substrate or the baseband.
Preferably, the locking mechanism 8 includes a pair of symmetrically disposed locking components, in order to enhance the locking effect on the telescopic rod 7 and reduce the damage to the outer surface of the telescopic rod 7 during the locking process, the embodiment further includes a non-slip pad disposed on the inner side of the locking component, so that the locking component can stabilize and lock the telescopic rod 7 through the non-slip pad. The non-slip mat is made of plastic, rubber or copper. The locking assembly further comprises a driving cylinder and a fixed clamping piece, the driving cylinder is arranged on the side wall of the protective shell 1, and a driving shaft of the driving cylinder is connected with the fixed clamping piece. Preferably, the driving cylinder is connected with a control module.
When the second generation high temperature superconducting strip metal sputtering target material protection device provided by the application is used, when magnetron sputtering is required, a user can firstly open the gate valve 5, control the lifting driving device 2 to work, push the magnetron sputtering gun 3 out of the protection chamber 4, then install the target material on the magnetron sputtering gun 3, return the magnetron sputtering gun 3 into the protection chamber 4, close the gate valve 5, perform vacuum pumping treatment on the vacuum sputtering chamber 9 after a substrate or a base band is installed on the substrate 11 in the vacuum sputtering chamber 9, open the gate valve 5, simultaneously evacuate the protection chamber 4 and the vacuum sputtering chamber 9, and ensure that the protection chamber 4 and the vacuum sputtering chamber 9 both reach a preset vacuum degree; after the vacuum pumping is finished, controlling the lifting driving device 2 to work, pushing the magnetron sputtering gun 3 out of the protection chamber 4, controlling the distance between the magnetron sputtering gun 3 and the substrate or the base band, stopping the lifting driving device 2 when the magnetron sputtering gun 3 moves to a target distance, and simultaneously holding the telescopic rod 7 tightly by the locking mechanism 8 to further stably fix the distance between the magnetron sputtering gun 3 and the substrate or the base band; then starting the magnetron sputtering gun 3 to start working, and sputtering the substrate or the base band; after sputtering is finished, the magnetron sputtering gun 3 is returned to the protection chamber 4, the gate valve 5 is closed, the target material is in a vacuum protection state of the protection chamber 4, and the target material is prevented from being oxidized in the process of replacing the substrate or the base band; and then, the vacuum sputtering chamber 9 is at normal pressure, the vacuum sputtering chamber 9 is opened, the substrate or the base band is replaced, after the replacement is finished, the vacuum sputtering chamber 9 is closed, the vacuum sputtering chamber 9 is vacuumized again, after the vacuumization is finished, the gate valve 5 is opened, the magnetron sputtering gun 3 is pushed out, the distance between the magnetron sputtering gun 3 and the substrate or the base band is adjusted, the secondary sputtering work is started, and the subsequent N times of sputtering work are the same operation, so that the target material can be effectively protected from being oxidized.
Specifically, a vacuumizing device 10 is arranged on the side wall of the vacuum sputtering chamber 9, a substrate 11 is arranged in the vacuum sputtering chamber 9, the protecting device is arranged above the substrate 11, and one end of the protecting device, which is provided with the gate valve 5, is close to the substrate 11. In a specific embodiment, taking the preparation process of YBCO high-temperature superconducting as an example, a substrate with a biaxial texture buffer layer is coated in a vacuum sputtering chamber; the coating target is an inlaid target, the components of the target are Y, Ba and Cu, and the proportion of the three elements is 1: 2: 3, sputtering a target material on a substrate by using a direct-current magnetron sputtering technology, specifically, driving a telescopic rod 7 to extend forwards or retreat by a pneumatic valve to adjust the distance between a magnetron sputtering gun 3 and the substrate or the base band, and controlling the distance within the range of 3 cm-10 cm, wherein the target base distance is preferably 6 cm; the sputtering process gas is preferably Ar, and the sputtering pressure is preferably 1 Pa; before starting sputtering, the gate valve 5 is opened, the pneumatic valve is utilized to do work, the magnetron sputtering gun 3 is pushed out from the protection chamber 4, the sputtering power supply is started, and when the target material is at 10W/cm2When the power density of the film is used for sputtering, the film coating speed can reach 0.2 mu m/min; the power density of the target can be adjusted within the range of 5-20W/cm2。
After the preparation is finished, stopping sputtering, enabling the magnetron sputtering gun 3 to do work through a pneumatic valve, returning to the protection chamber 4, closing the gate valve 5, and keeping a vacuum state in the protection chamber 4 to protect the target material easy to oxidize; then the substrate or the base band is replaced; and after the film coating is finished, the thickness of the prepared metal precursor film reaches 1-1.5 mu m, and the preparation of the YBaCu precursor film is finished.
Specifically, the second generation high temperature superconductive belt material sputtering substrate is a metal base belt with a prepared buffer layer structure, and the buffer layer structure is a Hastalloy/SDP-Y2O 3-IBAD-MgO/LaMnO3 substrate.
Specifically, a YBaCu precursor film prepared by a sputtering method is annealed, and the components of the precursor film are as follows: ba, Cu ═ 1: 2: 3, wherein the deviation of the proportion of each element is less than 0.5. Wherein, the element Y can be replaced by the element Re, and the element Re comprises rare earth elements such as Gd, Sm, Eu, Dy and the like.
Annealing needs 3 steps, the first step is annealing at the high temperature of 850-. The third step, cooling to 500-550 ℃, annealing for 30 minutes, and oxygen pressure of 105Pa。
Specifically, the annealing in oxygen atmosphere can be carried out in-situ annealing after sputtering, or annealing is carried out by taking out a sample and then using another instrument, wherein the background vacuum is required to be less than 5 × 10 before annealing-4Pa。
The foregoing is illustrative of the preferred embodiments of the present invention, and it is to be understood that the invention is not limited to the precise forms disclosed herein, and that various other combinations, modifications, and environments may be resorted to, falling within the scope of the invention as defined by the appended claims. But that modifications and variations may be effected by those skilled in the art without departing from the spirit and scope of the invention, which is to be limited only by the claims appended hereto.
Claims (10)
1. A second generation high temperature superconducting tape metal sputtering target material protection device is characterized in that: the magnetron sputtering device comprises a protection shell, a lifting driving device, a magnetron sputtering gun and a vacuum sputtering chamber, wherein a protection cavity is arranged in the protection shell, the magnetron sputtering gun is arranged in the protection cavity, a gate valve is arranged at the bottom of the protection shell and used for closing or opening the protection cavity, the lifting driving device is arranged at the top of the protection shell, the magnetron sputtering gun is connected with the lifting driving device through a telescopic rod, a through hole for the telescopic rod to pass through is formed in the top of the protection cavity, a sealing ring is arranged in the through hole, and when the gate valve is opened, the lifting driving device can drive the magnetron sputtering gun to extend out of the protection cavity or withdraw into the protection cavity; the vacuum sputtering chamber is internally provided with a substrate which is arranged opposite to the magnetron sputtering gun in the protective shell, a substrate or a base band to be sputtered is placed on the substrate, and the outer side of the vacuum sputtering chamber is also provided with a vacuum pumping device communicated with the inner cavity of the vacuum sputtering chamber.
2. The second generation high temperature superconducting tape metal sputtering target protection device according to claim 1, wherein: the gate valve controller is matched with the gate valve and is connected with the gate valve and used for controlling the opening or closing of the gate valve, and the gate valve is an electric gate valve, a pneumatic gate valve or a manual gate valve; when the gate valve adopts an electric gate valve or a pneumatic gate valve, the gate valve controller is an automatic control element; when the gate valve adopts a manual gate valve, the gate valve controller is a manual mechanical control device.
3. The second generation high temperature superconducting tape metal sputtering target protection device according to claim 1, wherein: the protection casing, the gate valve and the gate valve controller are all arranged outside the vacuum sputtering chamber, a through hole is formed in the joint of the vacuum sputtering chamber and the protection casing, and when the gate valve is opened, the protection cavity in the protection casing can be communicated with the inner cavity of the vacuum sputtering chamber.
4. The second generation high temperature superconducting tape metal sputtering target protection device according to claim 3, wherein: the joint of the protective chamber and the inner cavity of the vacuum sputtering chamber is provided with a sealing gasket, and the gas outside the protective shell and the vacuum sputtering chamber can not enter the protective chamber and/or the vacuum sputtering chamber through the through hole formed in the top wall of the vacuum sputtering chamber through the sealing gasket.
5. The second generation high temperature superconducting tape metal sputtering target protection device according to claim 1, wherein: the telescopic rod locking device is characterized by further comprising a locking mechanism, wherein the locking mechanism is arranged on the protective shell and used for locking the telescopic rod after the telescopic rod moves in place, the locking mechanism comprises a pair of symmetrical locking assemblies, each locking assembly comprises a driving cylinder and a fixed clamping piece, the driving cylinders are arranged on the side wall of the protective shell, and driving shafts of the driving cylinders are connected with the fixed clamping pieces.
6. The second generation high temperature superconducting tape metal sputtering target protection device according to claim 1, wherein: the substrate is arranged at the bottom of the inner cavity of the vacuum sputtering chamber, and the magnetron sputtering gun is arranged at the top of the vacuum sputtering chamber and is opposite to the upper part of the substrate; the vacuumizing device is arranged on the outer side of the top wall of the vacuum sputtering chamber or the outer sides of the left wall and the right wall of the vacuum sputtering chamber.
7. The second generation high temperature superconducting tape metal sputtering target protection device according to claim 1, wherein: the lifting driving device adopts an electric driving device or a pneumatic driving device, and the starting, stopping and pushing of the magnetic control sputtering gun or the withdrawal of the magnetic control sputtering gun of the lifting driving device are controlled by an electric or pneumatic control valve.
8. The second generation high temperature superconducting tape metal sputtering target protection device according to claim 2, wherein: the device also comprises a control module and a power supply, wherein the control module is respectively connected with the vacuumizing device, the lifting driving device, the magnetic control sputtering gun and the power supply; the lifting driving device and the vacuumizing device are controlled by the control module, when the gate valve adopts an electric gate valve or a pneumatic gate valve, the gate valve controller is also electrically connected with the control module, and the gate valve is controlled to be opened or closed by the control module, and the controller is arranged in the control module.
9. The second generation high temperature superconducting tape metal sputtering target protection device according to claim 8, wherein: the device comprises a control module, a human-computer interaction module and a control module, wherein the human-computer interaction module is connected with the control module, the human-computer interaction module is used for a user to input an operation instruction and check the working state information of the equipment, and the control module makes a corresponding response according to the operation instruction.
10. The second generation high temperature superconducting tape metal sputtering target protection device according to claim 5, wherein: the inner sides of the two locking assemblies are provided with anti-slip pads made of plastics, rubber or copper materials.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111188018A (en) * | 2020-03-06 | 2020-05-22 | 西南交通大学 | High-temperature superconducting strip metal sputtering target material protection device and substrate film manufacturing method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111188018A (en) * | 2020-03-06 | 2020-05-22 | 西南交通大学 | High-temperature superconducting strip metal sputtering target material protection device and substrate film manufacturing method |
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