CN211589697U - Polishing temperature adjusting device and chemical mechanical polishing equipment - Google Patents
Polishing temperature adjusting device and chemical mechanical polishing equipment Download PDFInfo
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- CN211589697U CN211589697U CN202021815464.5U CN202021815464U CN211589697U CN 211589697 U CN211589697 U CN 211589697U CN 202021815464 U CN202021815464 U CN 202021815464U CN 211589697 U CN211589697 U CN 211589697U
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Abstract
The utility model discloses a polishing temperature adjusting device and chemical mechanical polishing equipment, wherein the polishing temperature adjusting device comprises a temperature adjusting arm, a base and a driving mechanism; the base is fixedly connected with the temperature adjusting arm and is connected with the driving mechanism to drive the temperature adjusting arm to move up and down; the material of the bottom surface of the temperature adjusting arm is high-thermal-conductivity material, the temperature adjusting arm is arranged above the polishing pad and can move downwards to be in contact with the surface of the polishing pad or be in contact with polishing liquid on the surface of the polishing pad, and a fluid channel is arranged inside the temperature adjusting arm and used for flowing fluid with certain temperature to control the temperature of the bottom surface so as to adjust the polishing temperature of the polishing pad or the polishing liquid in contact with the bottom surface.
Description
Technical Field
The utility model relates to a chemical mechanical polishing technical field of wafer especially relates to a polishing temperature adjusting device and chemical mechanical polishing equipment.
Background
Wafer fabrication is a critical link that restricts the development of the ultra/very large scale Integrated Circuit (i.e., chip) industry. With the continuation of moore's law, the feature size of integrated circuits continues to shrink and approach the theoretical limit, and the requirements for the surface quality of wafers are increasingly strict, so that the control of the wafer manufacturing process on the size and number of defects is increasingly strict. Chemical mechanical polishing is a very important step in the wafer manufacturing process. The polishing process is to press the wafer on the surface of the polishing pad by using the bearing head, and realize the polishing of the surface of the wafer by means of the relative motion between the wafer and the polishing pad and the abrasive particles in the polishing solution.
During polishing, a large amount of heat is generated due to friction between the wafer and the polishing pad and microscopic cutting action, resulting in excessive temperature. However, for chemical mechanical polishing, chemical components in the polishing solution and chemical action on the surface of the wafer need to be performed at a certain temperature, and if the temperature is too high, the chemical action is too fast, and the chemical action and mechanical removal action are unbalanced, so that the processing quality of the wafer is greatly influenced. Therefore, there is a need to control the temperature during chemical mechanical polishing.
SUMMERY OF THE UTILITY MODEL
The embodiment of the utility model provides a polishing temperature adjusting device and chemical mechanical polishing equipment aims at solving one of the technical problem that exists among the prior art at least.
A first aspect of embodiments of the present invention provides a polishing temperature adjusting device for adjusting a temperature of a polishing pad and/or a polishing solution during chemical mechanical polishing, the polishing temperature adjusting device including a temperature adjusting arm, a base, and a driving mechanism;
the base is fixedly connected with the temperature adjusting arm and is connected with the driving mechanism to drive the temperature adjusting arm to move up and down; the material of the bottom surface of the temperature adjusting arm is high-thermal-conductivity material, the temperature adjusting arm is arranged above the polishing pad and can move downwards to be in contact with the surface of the polishing pad or be in contact with polishing liquid on the surface of the polishing pad, and a fluid channel is arranged inside the temperature adjusting arm and used for flowing fluid with certain temperature to control the temperature of the bottom surface so as to adjust the polishing temperature of the polishing pad or the polishing liquid in contact with the bottom surface.
In one embodiment, the polishing temperature control device further comprises a temperature sensor mounted at the bottom of the temperature adjusting arm and used for detecting the polishing temperature when the temperature adjusting arm is in contact with a polishing pad or polishing liquid.
In one embodiment, the fluid passage of the tempering arm is connected to a fluid supply via tubing, and a flow control valve is provided on the tubing to regulate the flow of fluid within the fluid passage to change the temperature of the bottom surface.
In one embodiment, the polishing apparatus further comprises a pressure sensor mounted at the bottom of the temperature-adjusting arm for detecting a pressure between the bottom surface and the polishing pad to control the pressure to be not greater than a fixed value so as to reduce friction between the bottom surface and the polishing pad.
In one embodiment, the controller is connected with the driving mechanism, the temperature sensor, the flow control valve and the pressure sensor respectively.
In one embodiment, the fluid passage comprises a liquid inlet pipe and a liquid outlet pipe which respectively extend along the length direction of the temperature regulating arm, and the liquid inlet pipe and the liquid outlet pipe are converged at one end, far away from the base, of the interior of the temperature regulating arm.
In one embodiment, the high thermal conductivity material is silicon carbide, silicon nitride, or aluminum nitride.
In one embodiment, the length of the conditioning arm is 0.8 to 1.2 polishing pad radii.
In one embodiment, the temperature of the fluid is no greater than 20 ℃.
A second aspect of the embodiments of the present invention provides a chemical mechanical polishing apparatus, including:
a polishing pad adhered to the polishing pad;
the bearing head is used for adsorbing the wafer and pressing the wafer on the polishing pad to rotate;
a dresser for dressing a surface of the polishing pad; and the number of the first and second groups,
the polishing temperature adjusting device as described above.
The utility model discloses beneficial effect includes: the temperature during polishing can be adjusted, and the polishing effect of the wafer is improved.
Drawings
The advantages of the invention will become clearer and more easily understood from the detailed description given with reference to the following drawings, which are given purely by way of illustration and do not limit the scope of protection of the invention, wherein:
fig. 1 is a schematic perspective view of a chemical mechanical polishing apparatus according to an embodiment of the present invention;
fig. 2 is a top view of a chemical mechanical polishing apparatus according to an embodiment of the present invention;
fig. 3 is a schematic view of a polishing temperature adjustment device according to an embodiment of the present invention;
fig. 4 is a cross-sectional view of a polishing temperature adjusting apparatus according to an embodiment of the present invention;
fig. 5 is a cross-sectional view of a polishing temperature adjusting apparatus according to another embodiment of the present invention.
Detailed Description
The technical solution of the present invention will be described in detail with reference to the following embodiments and accompanying drawings. The embodiments described herein are specific embodiments of the present invention and are provided to illustrate the concepts of the present invention; the description is intended to be illustrative and exemplary and should not be taken to limit the scope of the invention. In addition to the embodiments described herein, those skilled in the art will be able to employ other technical solutions which are obvious based on the disclosure of the claims and the specification thereof, and these technical solutions include technical solutions which make any obvious replacement or modification of the embodiments described herein. It is to be understood that, unless otherwise specified, the following descriptions of specific embodiments of the present invention are made for ease of understanding in a natural state where the relevant devices, apparatuses, components, etc. are originally at rest and are not given external control signals and driving forces.
Further, it is also noted that terms used herein such as front, back, up, down, left, right, top, bottom, front, back, horizontal, vertical, and the like, to denote orientation, are used merely for convenience of description to facilitate understanding of relative positions or orientations, and are not intended to limit the orientation of any device or structure.
In order to explain the technical solution of the present invention, the following description is made by using specific examples.
As shown in fig. 1 and 2, a chemical mechanical polishing apparatus 1 according to an embodiment of the present invention includes a polishing disk 10, a polishing pad 20 adhered on the polishing disk 10, a carrier head 30 for adsorbing a wafer and driving the wafer to rotate, a dresser 40 for dressing the polishing pad 20, a liquid supply portion 50 for supplying a polishing liquid to a surface of the polishing pad 20, and a storage portion 60.
Before polishing starts, the robot carries the wafer to the wafer storage portion 60, and the carrier head 30 moves from the wafer storage portion 60 to above the polishing disk 10 in the radial direction of the polishing disk 10 after loading the wafer. During chemical mechanical polishing, the carrier head 30 presses the wafer against the polishing pad 20 covered by the surface of the polishing disk 10, and the size of the polishing pad 20 is larger than the size of the wafer to be polished, for example, 1.2 times or more the size of the wafer, thereby ensuring that the wafer is uniformly polished. The carrier head 30 performs a rotating motion and reciprocates in a radial direction of the polishing platen 10 so that the surface of the wafer contacting the polishing pad 20 is gradually polished, and the polishing platen 10 rotates and the liquid supply part 50 sprays polishing liquid onto the surface of the polishing pad 20. Under the chemical action of the polishing liquid, the wafer is rubbed against the polishing pad 20 by the relative movement of the carrier head 30 and the polishing platen 10 to perform polishing. Polishing liquid consisting of submicron or nanometer abrasive particles and chemical solution flows between a wafer and a polishing pad 20, the polishing liquid is uniformly distributed under the action of transmission and rotation centrifugal force of the polishing pad 20 to form a layer of liquid film between the wafer and the polishing pad 20, chemical components in the liquid and the wafer generate chemical reaction to convert insoluble substances into easily soluble substances, then the chemical reactants are removed from the surface of the wafer through micro-mechanical friction of the abrasive particles and dissolved into the flowing liquid to be taken away, namely surface materials are removed in the alternate process of chemical film forming and mechanical film removing to realize surface planarization treatment, thereby achieving the purpose of global planarization. The dresser 40 is used to dress and activate the topography of the polishing pad 20 during polishing. The dresser 40 can remove foreign particles remaining on the surface of the polishing pad 20, such as abrasive particles in the slurry and waste materials released from the surface of the wafer, and can also flatten the surface deformation of the polishing pad 20 caused by abrasion, thereby ensuring the consistency of the surface topography of the polishing pad 20 during polishing and stabilizing the removal rate of polishing. After the polishing is completed, the carrier head 30 adsorbs the wafer to place it on the wafer holding section 60, and the robot takes the wafer from the wafer holding section 60 and transports the wafer to a post-processing unit.
During polishing, a large amount of heat is generated due to friction between the wafer surface and the polishing pad 20, and also a large amount of heat is generated due to friction between the dresser 40 and the polishing pad 20. Variations in the temperature of the surface of the polishing pad 20 can result in variations in the polishing performance parameters, such as wafer removal rate, polishing uniformity, etc. Accordingly, embodiments of the present invention provide a polishing temperature adjusting device 70 for adjusting the temperature of the polishing pad 20 and/or the polishing solution during chemical mechanical polishing.
As shown in fig. 1 and 2, the polishing temperature adjusting device 70 includes a temperature adjusting arm 71, a base 72, and a driving mechanism (not shown);
the base 72 is fixedly connected with the temperature adjusting arm 71, and the base 72 is connected with the driving mechanism to drive the temperature adjusting arm 71 to move up and down; the material of the bottom surface 711 of the temperature adjusting arm 71 is a high thermal conductivity material, the temperature adjusting arm 71 is disposed above the polishing pad 20 and can move down to contact with the surface of the polishing pad 20 or the polishing solution on the surface of the polishing pad 20, and a fluid channel 712 is disposed inside the temperature adjusting arm 71 for flowing a fluid at a certain temperature to control the temperature of the bottom surface 711 so as to adjust the polishing temperature of the polishing pad 20 or the polishing solution contacting with the bottom surface 711.
Wherein, the driving mechanism can be realized by a linear motor, and can also be composed of a lead screw and a motor, preferably, the lead screw has a differential thread structure to realize that the bottom surface 711 of the temperature adjusting arm 71 is contacted with the polishing pad 20 or the polishing solution through a tiny displacement, the temperature adjusting arm 71 is not tightly pressed on the polishing pad 20, the pressure between the temperature adjusting arm 71 and the polishing pad 20 can be controlled not to be over-pressed, thereby avoiding the abrasion between the temperature adjusting arm 71 and the polishing pad 20 caused by friction.
Wherein the bottom surface 711 of the temperature-adjusting arm 71 is flat to increase the contact area of the temperature-adjusting arm 71 with the polishing pad 20, thereby improving the temperature-adjusting effect.
As shown in fig. 3, the fluid passage 712 is a circulation passage for flowing the fluid in and out. The fluid passage 712 includes a liquid inlet pipe and a liquid outlet pipe extending along the length of the temperature-regulating arm 71, respectively, and the liquid inlet pipe and the liquid outlet pipe are joined at an end away from the base 72 inside the temperature-regulating arm 71.
The temperature of the fluid is not higher than 20 c to cool the polishing pad 20 or the polishing solution.
In one embodiment, the fluid passage 712 of the thermostatic arm 71 is connected to a fluid supply via tubing having a flow control valve disposed thereon to regulate the flow of fluid within the fluid passage 712 to vary the temperature of the bottom surface 711.
In the present embodiment, at least the bottom of the temperature adjustment arm 71 is formed of a high thermal conductivity material. The high thermal conductivity material needs to be resistant to both abrasion of the polishing pad 20 and high chemical resistance to the polishing liquid. The high thermal conductivity material may be a ceramic material such as silicon carbide, silicon nitride or aluminum nitride.
Fig. 4 and 5 show cross-sectional views of the tempering arm 71 in the width direction, in each case in two exemplary embodiments.
As shown in fig. 4, as one way of achieving this, the temperature-regulating arm 71 is formed entirely of a high thermal conductivity material, with a tubular fluid passage 712 formed therein.
As another way of realisation, the tempering arm 71 is a layered structure comprising an upper part 713 and a lower part 714, as shown in fig. 5. The upper portion 713 may be grooved to form a fluid channel 712, the upper portion 713 and the lower portion 714 may be adhesively bonded, and the upper portion 713 may be a plastic material, such as PP, PVC, to reduce the weight of the thermal arm 71 and prevent deformation due to gravity at the end away from the base 72.
As shown in fig. 4 and 5, in one embodiment, the polishing temperature adjusting device 70 further includes a temperature sensor 73 mounted at the bottom of the temperature adjusting arm 71 for detecting the polishing temperature of the polishing pad 20 or the polishing liquid contacting the bottom surface 711 of the temperature adjusting arm 71 when the temperature adjusting arm 71 contacts the polishing pad 20 or the polishing liquid. Specifically, the temperature sensor 73 is a noncontact temperature sensor.
As shown in fig. 4 and 5, in one embodiment, the polishing temperature adjusting device 70 further includes a pressure sensor 74 mounted at the bottom of the temperature adjusting arm 71 for detecting a pressure between the bottom surface 711 and the polishing pad 20 to control the pressure to be not greater than a fixed value so as to reduce friction between the bottom surface 711 and the polishing pad 20. Wherein the fixed value is 20 newtons.
In one embodiment, the polishing temperature adjusting device 70 further includes a controller (not shown) connected to the driving mechanism, the temperature sensor 73, the flow control valve, and the pressure sensor 74, respectively.
When the controller detects that the polishing temperature is too high, for example, higher than 50 c, through the temperature sensor 73, the controller causes the flow control valve to increase the opening degree to increase the fluid flow rate. Specifically, the controller detects the polishing temperature in a first temperature range, for example, 50 ℃ to 70 ℃, by the temperature sensor 73, and controls the flow control valve at a first preset opening degree so that the fluid flow rate is higher than 15L/min; the controller detects the polishing temperature in a second temperature range, for example, 40 ℃ to 50 ℃, through the temperature sensor 73, and controls the flow control valve to a second preset opening degree so that the fluid flow rate is between 10L/min and 15L/min; the controller controls the flow control valve at a third predetermined opening degree to control the fluid flow rate to be between 5L/min and 10L/min, when the polishing temperature is detected to be in a third temperature range, for example, 30 c to 40 c, by the temperature sensor 73. Preferably, a relation mapping table of the polishing temperature and the opening of the flow control valve is preset, and in the polishing process, the temperature range where the polishing temperature is detected by the temperature sensor 73 in real time is judged by looking up the table, so that the corresponding opening of the flow control valve is determined, and further, the polishing temperature can be stabilized in a proper working range.
The drawings in the present specification are schematic views to assist in explaining the concept of the present invention, and schematically show the shapes of the respective portions and the mutual relationships thereof. It should be understood that the drawings are not necessarily to scale, the same reference numerals being used to identify the same elements in the drawings in order to clearly illustrate the structure of the various elements of the embodiments of the invention.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an illustrative embodiment," "an example," "a specific example," or "some examples" or the like mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
While embodiments of the present invention have been shown and described, it will be understood by those of ordinary skill in the art that: various changes, modifications, substitutions and alterations can be made to the embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the claims and their equivalents.
Claims (10)
1. A polishing temperature adjusting device is used for adjusting the temperature of a polishing pad and/or polishing liquid during chemical mechanical polishing, and comprises a temperature adjusting arm, a base and a driving mechanism;
the base is fixedly connected with the temperature adjusting arm and is connected with the driving mechanism to drive the temperature adjusting arm to move up and down; the material of the bottom surface of the temperature adjusting arm is high-thermal-conductivity material, the temperature adjusting arm is arranged above the polishing pad and can move downwards to be in contact with the surface of the polishing pad or be in contact with polishing liquid on the surface of the polishing pad, and a fluid channel is arranged inside the temperature adjusting arm and used for flowing fluid with certain temperature to control the temperature of the bottom surface so as to adjust the polishing temperature of the polishing pad or the polishing liquid in contact with the bottom surface.
2. The polishing temperature conditioner of claim 1, further comprising a temperature sensor mounted at the bottom of said temperature conditioning arm for detecting said polishing temperature when said temperature conditioning arm is in contact with the polishing pad or the polishing liquid.
3. A polishing temperature conditioning apparatus according to claim 2, wherein the fluid passage of the temperature conditioning arm is connected to a fluid supply source via a line, and a flow control valve is provided on the line to regulate the flow of fluid in the fluid passage to change the temperature of the bottom surface.
4. A polishing temperature adjusting apparatus according to claim 3, further comprising a pressure sensor mounted at a bottom of said temperature adjusting arm for detecting a pressure between said bottom surface and said polishing pad to control the pressure to be not more than a fixed value so as to reduce friction between said bottom surface and said polishing pad.
5. The polishing temperature adjusting apparatus according to claim 4, further comprising a controller connected to the driving mechanism, the temperature sensor, the flow control valve, and the pressure sensor, respectively.
6. The polishing temperature conditioner of claim 1, wherein said fluid passage comprises a fluid inlet conduit and a fluid outlet conduit extending along the length of said conditioner arm, respectively, said fluid inlet conduit and said fluid outlet conduit meeting at an end of the interior of said conditioner arm remote from said base.
7. The polishing temperature conditioner of claim 1, wherein said high thermal conductivity material is silicon carbide, silicon nitride or aluminum nitride.
8. The polishing temperature conditioning device of claim 1, wherein the temperature conditioning arm has a length of 0.8 to 1.2 polishing pad radii.
9. The polishing temperature conditioner of claim 1, wherein the temperature of the fluid is not higher than 20 ℃.
10. A chemical mechanical polishing apparatus, comprising:
a polishing pad adhered to the polishing pad;
the bearing head is used for adsorbing the wafer and pressing the wafer on the polishing pad to rotate;
a dresser for dressing a surface of the polishing pad; and the number of the first and second groups,
the polishing temperature adjusting device according to any one of claims 1 to 9.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202021815464.5U CN211589697U (en) | 2020-08-27 | 2020-08-27 | Polishing temperature adjusting device and chemical mechanical polishing equipment |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202021815464.5U CN211589697U (en) | 2020-08-27 | 2020-08-27 | Polishing temperature adjusting device and chemical mechanical polishing equipment |
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| CN211589697U true CN211589697U (en) | 2020-09-29 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112405333A (en) * | 2020-12-04 | 2021-02-26 | 华海清科(北京)科技有限公司 | Chemical mechanical polishing device and polishing method |
| CN113070812A (en) * | 2021-05-08 | 2021-07-06 | 清华大学 | Polishing solution conveying device capable of adjusting temperature and chemical mechanical polishing equipment |
| CN113732936A (en) * | 2021-05-08 | 2021-12-03 | 清华大学 | Polishing temperature control device, chemical mechanical polishing system and method |
-
2020
- 2020-08-27 CN CN202021815464.5U patent/CN211589697U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112405333A (en) * | 2020-12-04 | 2021-02-26 | 华海清科(北京)科技有限公司 | Chemical mechanical polishing device and polishing method |
| CN113070812A (en) * | 2021-05-08 | 2021-07-06 | 清华大学 | Polishing solution conveying device capable of adjusting temperature and chemical mechanical polishing equipment |
| CN113732936A (en) * | 2021-05-08 | 2021-12-03 | 清华大学 | Polishing temperature control device, chemical mechanical polishing system and method |
| CN113732936B (en) * | 2021-05-08 | 2022-07-15 | 清华大学 | Polishing temperature control device, chemical mechanical polishing system and method |
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