CN211529908U - Vacuum high-voltage pulse insulation diode - Google Patents
Vacuum high-voltage pulse insulation diode Download PDFInfo
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- CN211529908U CN211529908U CN202020560588.7U CN202020560588U CN211529908U CN 211529908 U CN211529908 U CN 211529908U CN 202020560588 U CN202020560588 U CN 202020560588U CN 211529908 U CN211529908 U CN 211529908U
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Abstract
The utility model discloses an insulating diode of vacuum high voltage pulse, including positive pole urceolus, negative pole and insulator, the negative pole passes through the coaxial support of insulator in the positive pole urceolus, still be provided with pulse source side shield ring and vacuum side shield ring in the positive pole urceolus, pulse source side shield ring and vacuum side shield ring set up respectively in the insulator both sides, pulse source side shield ring corresponds pulse power source side setting, vacuum side shield ring corresponds the vacuum side setting. The utility model discloses a radial insulation system of vacuum diode high-voltage pulse can effectively homogenize near insulator electric field distribution and reduce three phase point electric field intensity, finally obtain higher insulation gradient and then dwindle vacuum diode's horizontal size by a wide margin, improve the small and light level of system, among this kind of radial insulation system of vacuum diode high-voltage pulse can be applied to compact structure's pulse power and high power microwave source system's vacuum high-voltage pulse diode well.
Description
Technical Field
The utility model belongs to the technical field of the diode, specifically speaking relates to a vacuum high voltage pulse insulation diode.
Background
Vacuum high voltage pulsed diodes are used in large numbers as particle beam sources in many vacuum high voltage pulsed systems such as particle beam accelerators, X-ray tubes, high power microwave sources, etc. Almost all vacuum high-voltage pulse diodes require an insulating structure to be arranged between the output end of the pulse power source and the diode to isolate an insulating medium area in the pulse source from a vacuum area of the diode. The volume weight of the insulator occupies a considerable proportion in the entire empty high-voltage pulse diode, affected by the insulation strength, mechanical strength, and the like. Many applications require the empty high voltage pulse diode to minimize its volume and weight.
The radial insulation structure generally adopts a single insulator as an insulation interface between an insulation medium of a pulse power source and vacuum, the axial length of the radial insulation structure can be designed to be shorter, the radial size can also be designed to be more compact after the proper insulation structure is optimized, and the radial insulation structure is better applied to a low-impedance diode with the impedance not exceeding hundreds of ohms.
The average insulation gradient of the existing radial insulator is limited by factors such as flashover field intensity of the vacuum surface of an insulating material, three-phase point field intensity and the like, and the radial size is large, so that the miniaturization level of the existing vacuum insulator is limited. Accordingly, further developments and improvements are still needed in the art.
SUMMERY OF THE UTILITY MODEL
In order to solve the above problems, a vacuum high-voltage pulse insulated diode has been proposed. In order to achieve the above object, the utility model provides a following technical scheme:
a vacuum high voltage pulse insulation diode, characterized in that: the anode comprises an anode outer cylinder, a cathode and an insulator, wherein the cathode is coaxially supported in the anode outer cylinder through the insulator, a pulse source side shielding ring and a vacuum side shielding ring are further arranged in the anode outer cylinder, the pulse source side shielding ring and the vacuum side shielding ring are respectively arranged on two sides of the insulator, the pulse source side shielding ring corresponds to the pulse power source side, and the vacuum side shielding ring corresponds to the vacuum side.
Further, the insulator include the support ring and set up in the insulator main part of support ring periphery, the support ring center sets up and is used for the centre bore that the negative pole passed, the insulator main part is the insulator ring, the insulator main part is internal along connecting on the support ring outer wall, the insulator main part is outer along connecting on the positive pole urceolus inner wall.
Further, the pulse source side shield ring includes a first shield portion for homogenizing an electric field strength and a first support portion for fixing the first shield portion, and the vacuum side shield ring includes a second shield portion for homogenizing an electric field strength and a second support portion for fixing the second shield portion.
Furthermore, the first shielding part and the second shielding part are hollow bowl-shaped structures with bowl openings of which the diameters are gradually increased, the bowl openings of the first shielding part face the pulse source side, and the bowl openings of the second shielding part face the vacuum side.
Further, first supporting part with all be equipped with the equalizer ring that is used for reducing field intensity on the second supporting part, the equalizer ring sets up and is being close to the triphase point department of insulator one side, the equalizer ring cover is established on the support ring outer wall.
Furthermore, the grading ring is close to two right angles on one side of the insulator and are rounded.
Further, the anode outer cylinder is a non-magnetic stainless steel anode outer cylinder, the cathode is a non-magnetic stainless steel cathode, the pulse source side shielding ring is a non-magnetic stainless steel pulse source side shielding ring, the vacuum side shielding ring is a non-magnetic stainless steel vacuum side shielding ring, and the insulator is a 1010 reinforced nylon insulator.
Has the advantages that:
the utility model discloses a near vacuum high voltage pulse insulation diode can effective homogenization insulator electric field distribution and reduce three phase point electric field intensity, finally obtains higher insulating gradient, and then dwindles vacuum diode's horizontal size by a wide margin, improves the small and light level of system, and this vacuum high voltage pulse insulation diode can be applied to well among the vacuum high voltage pulse diode of compact structure's pulse power and high power microwave source system.
Through the structural design of the pulse source side shielding ring, the vacuum side shielding ring and the insulator support ring, the potential of the insulator region between the two shielding rings is homogenized, and the electric field intensity on the surface of an insulator near a cathode is greatly reduced; the grading ring is designed at the position of the insulator close to the three-phase point of the shielding ring, so that the field intensity of the insulator at the three-phase point is further reduced, and the insulation gradient of the system is greatly improved.
Drawings
Fig. 1 is a schematic view of the internal structure of a vacuum high-voltage pulse insulated diode according to an embodiment of the present invention;
fig. 2 is a schematic sectional view of the insulator in fig. 1;
fig. 3 is a partially enlarged structural schematic view of a connecting portion of the pulse source-side shield ring, the vacuum-side shield ring and the insulator in fig. 1;
FIG. 4 is an equipotential line distribution diagram of a vacuum diode high-voltage pulse radial insulation structure simulated under a voltage of 600kV in an embodiment of the present disclosure;
fig. 5 is a distribution curve of electric field intensity on the surface of the insulator with the vacuum diode high-voltage pulse radial insulation structure, which is obtained through simulation under the condition of 600kV voltage in the embodiment of the invention.
The reference signs are: 1. an anode outer cylinder; 2. a cathode; 3. a pulse source side shield ring; 4. an insulator; 5. a vacuum side shield ring; 6. an insulator main body; 7. a support ring; 8. and (6) a grading ring.
Detailed Description
All of the features disclosed in this specification, or all of the steps in any method or process so disclosed, may be combined in any combination, except combinations of features and/or steps that are mutually exclusive.
Any feature disclosed in this specification (including any accompanying claims, abstract and drawings), may be replaced by alternative features serving equivalent or similar purposes, unless expressly stated otherwise. That is, unless expressly stated otherwise, each feature is only an example of a generic series of equivalent or similar features.
As shown in fig. 1-3, a vacuum high voltage pulse insulated diode is characterized in that: the anode comprises an anode outer cylinder 1, a cathode 2 and an insulator 4, wherein the cathode 2 is coaxially supported in the anode outer cylinder 1 through the insulator 4, a pulse source side shielding ring 3 and a vacuum side shielding ring 5 are further arranged in the anode outer cylinder 1, the pulse source side shielding ring 3 and the vacuum side shielding ring 5 are respectively arranged on two sides of the insulator 4, the pulse source side shielding ring 3 is arranged corresponding to a pulse power source side, and the vacuum side shielding ring 5 is arranged corresponding to a vacuum side. The anode outer cylinder 1, the cathode 2, the insulator 4, the pulse source side shielding ring 3 and the vacuum side shielding ring 5 are all coaxially arranged. Through the structural design of the pulse source side shielding ring 3, the vacuum side shielding ring 5 and the insulator 4 supporting structure, the potential of the insulator region between the two shielding rings is homogenized, and the electric field intensity of the surface of the insulator 4 near the cathode is greatly reduced. The pulse source side shield ring 3 and the vacuum side shield ring 5 may be identical or different in geometric size according to the electric field distribution between the cathode and the anode.
Preferably, the insulator 4 comprises a support ring 7 and an insulator main body 6 arranged on the periphery of the support ring 7, the center of the support ring 7 is provided with a center hole for the cathode 2 to pass through, the insulator main body 6 is an insulating ring, the inner edge of the insulator main body 6 is connected to the outer wall of the support ring 7, and the outer edge of the insulator main body 6 is connected to the inner wall of the anode outer cylinder 1. The diameter of the central hole of the support ring 7 is the same as the outer diameter of the cathode 2 at the corresponding connecting position.
Preferably, the pulse source side shield ring 3 includes a first shield portion for homogenizing electric field intensity and a first support portion for fixing the first shield portion, and the vacuum side shield ring 5 includes a second shield portion for homogenizing electric field intensity and a second support portion for fixing the second shield portion.
Preferably, the first shielding part and the second shielding part are both hollow bowl-shaped structures with the diameters of bowl openings gradually increased, the bowl opening of the first shielding part faces the pulse source side, and the bowl opening of the second shielding part faces the vacuum side.
Preferably, the equalizing rings 8 used for reducing the field intensity are arranged on the first supporting part and the second supporting part, the equalizing rings 8 are arranged at three-phase points close to one side of the insulator 4, and the equalizing rings 8 are sleeved on the outer wall of the supporting ring 7. A grading ring 8 is designed at a three-phase point position close to one side of the insulator 4, so that the field intensity at the three-phase point of the insulator 4 is further reduced.
Preferably, the grading ring 8 is rounded at both right angles on the side close to the insulator 4. The function of rounding off is to reduce the local electric field strength and to reduce the electron emission probability of the seeds.
Preferably, the anode outer cylinder 1 is a non-magnetic stainless steel anode outer cylinder, the cathode 2 is a non-magnetic stainless steel cathode, the pulse source side shielding ring 3 is a non-magnetic stainless steel pulse source side shielding ring, the vacuum side shielding ring 5 is a non-magnetic stainless steel vacuum side shielding ring, and the insulator 4 is a 1010 reinforced nylon insulator. The cathode and anode are determined by the applied potential, the cathode is applied with low potential, the anode is applied with high potential, and the cathode potential is hundreds of kilovolts to megavolts lower than the anode potential. Because the high-voltage insulated diode is generally used in a pulse power system or a high-power microwave source system, and an external guide magnetic field is generally used in the two systems, preferably, the cathode and the anode are made of non-magnetic stainless steel materials to avoid the loss of the external guide magnetic field, and other non-magnetic metal materials such as copper, aluminum, titanium alloy and the like can be used as the cathode and the anode materials; the insulator material adopts 1010 reinforced nylon in consideration of the factors of mechanical strength, easy processing and the like; there are many other materials that can be used as insulators, such as alumina ceramics, plexiglass, polytetrafluoroethylene, ultra-high molecular weight polyethylene, cross-linked polystyrene, and other common electrical insulating materials.
The working principle is as follows: when pulse high voltage is fed between the cathode and the anode at the pulse source side, a radial high-voltage electric field is generated between the cathode and the anode, and electric field distribution in inverse proportion to the position radius is formed in the coaxial region of the cathode and the anode, namely the electric field is concentrated in the region near the cathode; through the structural design of the pulse source side shielding ring, the vacuum side shielding ring and the insulator support ring, the potential of the insulator region between the two shielding rings is homogenized, and the electric field intensity on the surface of an insulator near a cathode is greatly reduced; a grading ring is designed at the position of the insulator close to the three-phase point of the shielding ring, so that the field intensity of the insulator at the three-phase point is further reduced.
In the preferred embodiment, the inner radius of the anode outer cylinder 1 is 130mm, and the outer radius is 135 mm; the cathode 2 is a solid cylinder with the outer radius of 29.2 mm; the outer radius of the insulator 4 is 130mm, and the inner radius is 29.2 mm; the thickness of the insulator main body 6 is 22 mm; a support ring 7 is arranged in the insulator 4, the thickness is 50mm, and the outer radius is 37.8 mm; the pulse source side shielding ring 3 and the vacuum side shielding ring 5 have the same structure size, the maximum outer radius is 78mm, and the height is 68.4 mm; the inner radius of the grading ring 8 is 37.8mm, the outer radius is 41.8mm, and the height is 5 mm; two right-angle transformers on one side of the grading ring 8, which is close to the insulator 4, are respectively chamfered with fillets with the radius of 2.5 mm. In the embodiment, the anode outer cylinder 1, the cathode 2, the pulse source side shielding ring 3 and the vacuum side shielding ring 5 are made of nonmagnetic stainless steel, and the insulator 4 is made of 1010 reinforced nylon.
Simulation calculation is carried out on the vacuum diode high-voltage pulse radial insulation structure under the structure size by using electrostatic field simulation software, equipotential line distribution of a diode region is obtained through simulation under the condition that cathode and anode feed-in voltage is 600kV, and the surface electric field distribution of the insulator is shown in figure 4 and figure 5. The equipotential lines of the designed diode are distributed more uniformly in the area near the insulator, which shows that the insulating structure designed in the embodiment can effectively homogenize the surface electric field of the insulator and reduce the electric field intensity of the insulator near the cathode area; the maximum electric field intensity on the surface of the insulator is about 96kV/cm and is less than 137kV/cm of pulse surface flashover field intensity estimated by a Martin formula; the field intensity at the three-phase point of the insulator is only 17kV/cm and is less than the empirical threshold of three-phase point breakdown by 25 kV/cm; therefore, the insulator can endure 600kV high-voltage electric pulse, and the average insulation gradient is more than 60 kV/cm.
The present invention is not limited to the foregoing embodiments. The invention extends to any novel feature or any novel combination of features disclosed in this specification, and to any novel method or process steps or any novel combination of features disclosed.
Claims (7)
1. A vacuum high voltage pulse insulation diode, characterized in that: the anode comprises an anode outer cylinder, a cathode and an insulator, wherein the cathode is coaxially supported in the anode outer cylinder through the insulator, a pulse source side shielding ring and a vacuum side shielding ring are further arranged in the anode outer cylinder, the pulse source side shielding ring and the vacuum side shielding ring are respectively arranged on two sides of the insulator, the pulse source side shielding ring corresponds to the pulse power source side, and the vacuum side shielding ring corresponds to the vacuum side.
2. The vacuum high-voltage pulse-insulated diode according to claim 1, wherein: the insulator include the support ring and set up in the insulator main part of support ring periphery, the support ring center set up be used for the centre bore that the negative pole passed, the insulator main part is the insulator ring, the insulator main part is internal along connecting on the support ring outer wall, the insulator main part is outer along connecting on the positive pole urceolus inner wall.
3. A vacuum high voltage pulse insulated diode according to claim 2, wherein: the pulse source side shield ring includes a first shield portion for homogenizing an electric field strength and a first support portion for fixing the first shield portion, and the vacuum side shield ring includes a second shield portion for homogenizing an electric field strength and a second support portion for fixing the second shield portion.
4. A vacuum high voltage pulse insulated diode according to claim 3, wherein: first shield part with second shield part is bowl mouth diameter crescent cavity bowl-shaped structure, first shield part bowl mouth is towards the pulse source side, the bowl mouth of second shield part is towards the vacuum side.
5. A vacuum high voltage pulse insulated diode according to claim 3, wherein: first supporting part with all be equipped with the equalizer ring that is used for reducing field intensity on the second supporting part, the equalizer ring sets up and is being close to the triphase point department of insulator one side, the equalizer ring cover is established on the support ring outer wall.
6. The vacuum high-voltage pulse-insulated diode according to claim 5, wherein: the grading ring is close to two right-angle uniform fillets on one side of the insulator.
7. The vacuum high-voltage pulse-insulated diode according to claim 1, wherein: the utility model discloses a high-efficient insulation device, including positive pole urceolus, pulse source side shield ring, vacuum side shield ring, insulator, 1010 reinforcing nylon insulator, the positive pole urceolus is no magnetism stainless steel positive pole urceolus, the negative pole is no magnetism stainless steel negative pole, pulse source side shield ring is no magnetism stainless steel pulse source side shield ring, vacuum side shield ring is no magnetism stainless steel vacuum side shield ring, the insulator is 1010 reinforcing nylon insulator.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202020560588.7U CN211529908U (en) | 2020-04-15 | 2020-04-15 | Vacuum high-voltage pulse insulation diode |
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| CN202020560588.7U CN211529908U (en) | 2020-04-15 | 2020-04-15 | Vacuum high-voltage pulse insulation diode |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114334585A (en) * | 2021-11-10 | 2022-04-12 | 西北核技术研究所 | MV-level pulse high-voltage insulation stack and installation method thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114334585A (en) * | 2021-11-10 | 2022-04-12 | 西北核技术研究所 | MV-level pulse high-voltage insulation stack and installation method thereof |
| CN114334585B (en) * | 2021-11-10 | 2023-07-21 | 西北核技术研究所 | MV-level pulse high-voltage insulation stack and installation method thereof |
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