CN211487612U - Pressureless sintering carborundum reactor - Google Patents
Pressureless sintering carborundum reactor Download PDFInfo
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- CN211487612U CN211487612U CN201922121715.3U CN201922121715U CN211487612U CN 211487612 U CN211487612 U CN 211487612U CN 201922121715 U CN201922121715 U CN 201922121715U CN 211487612 U CN211487612 U CN 211487612U
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Abstract
The utility model discloses a pressureless sintering carborundum reactor, through the effect of first cold and hot medium access board, second cold and hot medium access board and third cold and hot medium access board, make the first reaction chip and the second reaction chip that set up between them increase heat transfer area, improve heat exchange efficiency, increase the reaction rate of reactant in the reaction channel, thus can reduce the emergence of side reaction, improve the purpose of the reaction efficiency of positive and negative reaction; and more heat can be generated in the strong exothermic reaction, the heat exchange rate is improved, and the purpose of quickly taking away the heat generated in the reaction is achieved.
Description
Technical Field
The utility model belongs to the technical field of the reactor, concretely relates to non-pressure sintering carborundum reactor.
Background
Microchannel reactors, microreactors fabricated using precision machining techniques with feature sizes between 10 and 300 microns (or 1000 microns), "micro" of a microchannel reactor means that the channels of the process fluid are on the micron scale, and does not mean that the overall dimensions of the microreactor apparatus are small or that the product yield is small. The microchannel reactor may contain millions of microchannels, thereby achieving high throughput. The basic principle is that a reaction fluid flowing through is cut through a specially designed microstructure unit, so that the reaction fluid can be mixed and subjected to heat exchange in a micron space-time size or even smaller size. Like the conventional chemical technology, the micro chemical technology also uses unit components such as a reactor, a mixer, a heat exchanger, and the like. Microchannel reactor devices can be subdivided into micromixers, micro heat exchangers, and microchannel reactors, depending on their primary use or function. The micro-channel reactor equipment has extremely large specific surface area due to the internal microstructure, which can reach hundreds of times or even thousands of times of the specific surface area of the stirring kettle. The microchannel reactor has excellent heat transfer and mass transfer capacity, can realize instantaneous uniform mixing of materials and heat transfer, and therefore, many reactions which cannot be realized in the conventional reactor can be realized in the microchannel reactor.
However, in the reaction test of the existing microchannel reactor, because the heat exchange efficiency is low and the reaction rate is slow, the side reactions are increased, and the forward and reverse reactions are not facilitated.
SUMMERY OF THE UTILITY MODEL
Therefore, the utility model provides a non-pressure sintering carborundum reactor to reactor in solving prior art is in reaction test, because the heat exchange is inefficient, leads to the side reaction to increase, is unfavorable for the going on problem of positive and negative reaction.
In order to achieve the above object, the present invention provides the following technical solutions: a pressureless sintering silicon carbide reactor comprises an upper cover plate, a first cooling and heating medium channel plate, a first reaction chip, a second cooling and heating medium channel plate, a second reaction chip, a third cooling and heating medium channel plate and a lower cover plate which are sequentially connected from top to bottom; the top surface of the upper cover plate is provided with a reactant inlet and a cold and heat medium inlet; a third cooling and heating medium channel is arranged on the top surface of the first cooling and heating medium channel plate; one end of the cooling and heating medium is communicated with the cooling and heating medium inlet; the top surface of the first cooling and heating medium channel plate is provided with a second reactant through hole penetrating to the bottom surface; the top surface of the first reaction chip is provided with a first reaction channel; one end of the first reaction channel is communicated with the reactant inlet through a second reactant through hole; a first cooling and heating medium channel is arranged on the top surface of the second cooling and heating medium channel plate, and a second cooling and heating medium channel is arranged on the bottom surface of the second cooling and heating medium channel plate; one end of the first cooling and heating medium channel is communicated with a third cooling and heating medium channel, and one end of the second cooling and heating medium channel is communicated with the first cooling and heating medium channel; a second reaction channel is arranged on the bottom surface of the second reaction chip; one end of the second reaction channel is communicated with one end of the first reaction channel, which is far away from the reactant inlet; a fourth cooling and heating medium channel is arranged on the bottom surface of the third cooling and heating medium channel plate; one end of the fourth cooling and heating medium channel is communicated with the second cooling and heating medium channel; the top surface of the fourth cooling and heating medium channel is provided with a third reactant through hole which penetrates through the bottom surface; the lower cover plate is provided with a reactant outlet and a cold and hot medium outlet; the reactant outlet is communicated with one end of the second reaction channel, which is far away from the first reaction channel, through a third reactant through hole; the cooling medium outlet is communicated with one end, far away from the second cooling medium channel, of the fourth cooling medium channel.
Furthermore, a first cooling and heating medium through hole penetrating to the bottom surface is formed in the top surface of the first reaction chip, the top of the first cooling and heating medium through hole is communicated with the third cooling and heating medium channel, and the bottom of the first cooling and heating medium through hole is communicated with the first cooling and heating medium channel.
Furthermore, a second cold and heat medium through hole penetrating through the top surface to the bottom surface of the second reaction chip is formed in the top surface of the second reaction chip; the top of the second cold and hot medium through hole is communicated with the second cold and hot medium channel, and the bottom of the second cold and hot medium through hole is communicated with the fourth cold and hot medium channel.
Further, the first reaction channel is in a wave-shaped structure.
Further, the second reaction channel is in a wave-shaped structure.
Further, the first cooling and heating medium channel is of a wave-shaped structure.
Further, the second cooling and heating medium channel is of a wave-shaped structure.
Furthermore, the whole reactor is of a cuboid structure.
Furthermore, the whole reactor is of an elliptic cylinder structure.
The utility model has the advantages of as follows: a pressureless sintering silicon carbide reactor is characterized in that a first reaction chip and a second reaction chip arranged between a first cold-hot medium channel plate, a second cold-hot medium channel plate and a third cold-hot medium channel plate increase the heat exchange area, improve the heat exchange efficiency and increase the reaction rate of reactants in a reaction channel under the action of the first cold-hot medium channel plate, the second cold-hot medium channel plate and the third cold-hot medium channel plate, so that the purposes of reducing the occurrence of side reactions and improving the reaction efficiency of positive reaction can be achieved; and the front and back surfaces of one silicon carbide ceramic plate are both carved with heat exchange medium runners and are connected in series, namely, the double-layer heat exchange channel increases the flow and the volume of the heat exchange medium. The heat is rapidly taken away in the special strong exothermic reaction process, so that the required reaction temperature is favorably kept, and dangerous conditions such as explosion and the like are avoided.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below. It should be apparent that the drawings in the following description are merely exemplary, and that other embodiments can be derived from the drawings provided by those of ordinary skill in the art without inventive effort.
The structure, ratio, size and the like shown in the present specification are only used for matching with the content disclosed in the specification, so as to be known and read by people familiar with the technology, and are not used for limiting the limit conditions which can be implemented by the present invention, so that the present invention has no technical essential significance, and any structure modification, ratio relationship change or size adjustment should still fall within the scope which can be covered by the technical content disclosed by the present invention without affecting the efficacy and the achievable purpose of the present invention.
FIG. 1 is a schematic diagram of the overall explosion structure of a pressureless sintered silicon carbide reactor according to an embodiment of the present invention;
fig. 2 is a schematic structural view of a work flow of a pressureless sintering silicon carbide reactor according to an embodiment of the present invention.
In the figure: the device comprises an upper cover plate-1, a first reaction chip-2, a second cooling and heating medium channel plate-3, a second reaction chip-4, a lower cover plate-5, a reactant inlet-11, a cooling and heating medium inlet-12, a first reaction channel-21, a first cooling and heating medium through hole-22, a first cooling and heating medium channel-31, a second cooling and heating medium channel-32, a first cooling and heating reactant through hole-33, a second reaction channel-41, a second cooling and heating medium through hole-42, a reactant outlet-51 and a cooling and heating medium outlet-52.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the accompanying drawings and detailed description, but those skilled in the art will understand that the following described embodiments are some, not all, of the embodiments of the present invention, and are only used for illustrating the present invention, and should not be construed as limiting the scope of the present invention. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention. The examples, in which specific conditions are not specified, were conducted under conventional conditions or conditions recommended by the manufacturer. The reagents or instruments used are not indicated by the manufacturer, and are all conventional products available commercially.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplification of description, but do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present invention can be understood in specific cases to those skilled in the art.
Example 1
Referring to fig. 1, the pressureless sintering silicon carbide reactor provided in embodiment 1 of the present invention includes an upper cover plate 1, a first cooling and heating medium channel plate 6, a first reaction chip, a second cooling and heating medium channel plate 3, a second reaction chip 4, a third cooling and heating medium channel plate 7, and a lower cover plate 5, which are sequentially connected from top to bottom; the top surface of the upper cover plate 1 is provided with a reactant inlet 11 and a cold and heat medium inlet 12; the top surface of the first cooling and heating medium channel plate 6 is provided with a third cooling and heating medium channel 61; one end of the cooling medium 61 is communicated with the cooling medium inlet; the top surface of the first cooling and heating medium channel plate 6 is provided with a second reactant through hole 62 which penetrates through to the bottom surface; the top surface of the first reaction chip is provided with a first reaction channel; one end of the first reaction channel is communicated with the reactant inlet through a second reactant through hole 62; a first cooling and heating medium channel 31 is arranged on the top surface of the second cooling and heating medium channel plate 3, and a second cooling and heating medium channel 32 is arranged on the bottom surface of the second cooling and heating medium channel plate 3; one end of the first cooling and heating medium channel is communicated with the third cooling and heating medium channel 61, and one end of the second cooling and heating medium channel 32 is communicated with the first cooling and heating medium channel 31; the bottom surface of the second reaction chip 4 is provided with a second reaction channel 41; one end of the second reaction channel 41 is communicated with one end of the first reaction channel 21 far away from the reactant inlet 11; a fourth cooling and heating medium channel 71 is arranged on the bottom surface of the third cooling and heating medium channel plate 7; one end of the fourth cooling and heating medium channel 71 is communicated with the second cooling and heating medium channel; a third reactant through hole 72 penetrating to the bottom surface is formed in the top surface of the fourth cooling and heating medium channel 71; the lower cover plate 5 is provided with a reactant outlet 51 and a cooling and heating medium outlet 52; the reactant outlet is communicated with one end of the second reaction channel far away from the first reaction channel through a third reactant through hole 72; the cooling medium outlet is communicated with one end of the fourth cooling medium channel, which is far away from the second cooling medium channel.
To be further described, the top surface of the first reaction chip 2 is provided with a first cooling and heating medium through hole 22 penetrating to the bottom surface, the first cooling and heating medium through hole 22 is arranged at a position of the first reaction chip close to the corner, so that smooth proceeding of other channels is not influenced, the top of the first cooling and heating medium through hole 22 is communicated with the cooling and heating medium inlet 12, and the bottom of the first cooling and heating medium through hole 22 is communicated with the first cooling and heating medium channel 31. The top surface of the second reaction chip 4 is provided with a second cooling and heating medium through hole 42 which penetrates through the bottom surface; the second cooling and heating medium through hole 42 is arranged at the position of the second reaction chip 4 close to the corner, and the smooth operation of other channels is not influenced; the top of the second cooling and heating medium through hole 42 is communicated with the second cooling and heating medium channel 32, and the bottom of the second cooling and heating medium through hole 32 is communicated with the fourth cooling and heating medium channel 71. The top of the second cold and heat medium channel plate 3 is provided with a first cold reactant through hole 33 which penetrates through to the bottom; the bottom end of the first cold reactant through hole 33 communicates with the first reaction channel 21, and the bottom end of the first cold reactant through hole 33 communicates with the second reaction channel 21.
The end part of a third cooling medium channel arranged at the top of the first cooling medium channel plate is provided with a through hole penetrating to the bottom of the first cooling medium channel plate at the bottom, so that the first cooling medium channel is communicated with the first cooling medium through hole, and the end part of the first cooling medium channel on the second cooling medium channel plate is also provided with a through hole penetrating to the bottom, so that the second cooling medium channel is communicated with the second cooling medium channel; the principles of other communications are the same and will not be described here.
When in use, please refer to fig. 2 (the single line indicates the reactant flow, and the double line indicates the cooling and heating medium flow), the cooling and heating medium enters the first cooling and heating medium through hole 22 after entering the cooling and heating medium inlet 12; the hot and cold medium passes through the hot and cold medium through hole 22, enters the first hot and cold medium channel 31, passes through the first hot and cold medium channel 31, enters the second hot and cold medium channel 32, passes through the second hot and cold medium channel 32, enters the second hot and cold medium through hole 42, passes through the second hot and cold medium through hole 42, enters the hot and cold medium outlet 52, and flows out of the hot and cold medium outlet 52; the cooling and heating medium respectively exchanges heat with the first reaction chip and the second reaction chip when flowing through the first cooling and heating medium channel 31 and the second cooling and heating medium channel 32, and the reaction rate of reactants in the first reaction chip and the second reaction chip is improved. The reactant enters the first reaction channel 21 from the reactant inlet 11, passes through the first reaction channel 21 and then enters the first cold reactant through hole 33; enters the second reaction channel 41 after passing through the first cold reactant through-hole 33, and is discharged from the reactant outlet after passing through the second reaction channel 41. Under the action of the first cold and hot medium channel plate, the second cold and hot medium channel plate and the third cold and hot medium channel plate, the heat exchange area of the first reaction chip and the second reaction chip arranged between the first cold and hot medium channel plate and the second cold and hot medium channel plate is increased, the heat exchange efficiency is improved, the reaction rate of reactants in the reaction channel is increased, and therefore the purposes of reducing the occurrence of side reactions, improving the reaction efficiency of positive reaction and improving the use flexibility are achieved; after the plates are sealed and attached, the reaction channel and the cold and heat medium channel are formed inside, the reaction channel and the cold and heat medium channel are independently sealed, and the reaction channel and the cold and heat medium channel cannot be mutually streamed in the reaction.
Example 2
Referring to fig. 1, a pressureless sintering silicon carbide reactor provided in embodiment 2 of the present invention includes an upper cover plate 1, a first reaction chip 2, a second cooling and heating medium channel plate 3, a second reaction chip 4, and a lower cover plate 5, which are sequentially connected from top to bottom; the top surface of the upper cover plate 1 is provided with a reactant inlet 11 and a cold and heat medium inlet 12; the top surface of the first reaction chip 2 is provided with a first reaction channel 21; one end of the first reaction channel 21 is communicated with the reactant inlet 11; a first cooling and heating medium channel 31 is arranged on the top surface of the second cooling and heating medium channel plate 3, and a second cooling and heating medium channel 32 is arranged on the bottom surface of the second cooling and heating medium channel plate 3; one end of the first cooling and heating medium channel 31 is communicated with the cooling and heating medium inlet 12, and one end of the second cooling and heating medium channel 32 is communicated with one end of the first cooling and heating medium channel 31 far away from the cooling and heating medium inlet 12; the bottom surface of the second reaction chip 4 is provided with a second reaction channel 41; one end of the second reaction channel 41 is communicated with one end of the first reaction channel 21 far away from the reactant inlet 11; the lower cover plate 5 is provided with a reactant outlet 51 and a cooling and heating medium outlet 52; the reactant outlet 51 is communicated with one end of the second reaction channel 41 far away from the first reaction channel 21; the cooling medium outlet 52 is communicated with one end of the second cooling medium channel 32 far away from the first cooling medium channel 31.
This embodiment is substantially the same as embodiment 1 except that the first reaction channel 21 has a corrugated structure. The second reaction channel 41 has a wave structure. The first cooling and heating medium channel 31 is in a wave structure. The second cooling and heating medium channel 32 is in a wave structure. The whole reactor is of a cuboid structure. The whole reactor is in an elliptic cylinder structure. The reaction length is increased, so that reactants can fully react.
The present invention is not limited to the above-mentioned optional embodiments, and any other products in various forms can be obtained by anyone under the teaching of the present invention, and any changes in the shape or structure thereof, all the technical solutions falling within the scope of the present invention, are within the protection scope of the present invention.
Claims (10)
1. A pressureless sintering silicon carbide reactor is characterized by comprising an upper cover plate, a first cold and heat medium channel plate, a first reaction chip, a second cold and heat medium channel plate, a second reaction chip, a third cold and heat medium channel plate and a lower cover plate which are sequentially connected from top to bottom; the top surface of the upper cover plate is provided with a reactant inlet and a cold and heat medium inlet; a third cooling and heating medium channel is arranged on the top surface of the first cooling and heating medium channel plate; one end of the cooling and heating medium is communicated with the cooling and heating medium inlet; the top surface of the first cooling and heating medium channel plate is provided with a second reactant through hole penetrating to the bottom surface; the top surface of the first reaction chip is provided with a first reaction channel; one end of the first reaction channel is communicated with the reactant inlet through a second reactant through hole;
a first cooling and heating medium channel is arranged on the top surface of the second cooling and heating medium channel plate, and a second cooling and heating medium channel is arranged on the bottom surface of the second cooling and heating medium channel plate; one end of the first cooling and heating medium channel is communicated with a third cooling and heating medium channel, and one end of the second cooling and heating medium channel is communicated with the first cooling and heating medium channel;
a second reaction channel is arranged on the bottom surface of the second reaction chip; one end of the second reaction channel is communicated with one end of the first reaction channel, which is far away from the reactant inlet;
a fourth cooling and heating medium channel is arranged on the bottom surface of the third cooling and heating medium channel plate; one end of the fourth cooling and heating medium channel is communicated with the second cooling and heating medium channel; the top surface of the fourth cooling and heating medium channel is provided with a third reactant through hole which penetrates through the bottom surface;
the lower cover plate is provided with a reactant outlet and a cold and hot medium outlet; the reactant outlet is communicated with one end of the second reaction channel, which is far away from the first reaction channel, through a third reactant through hole; the cooling medium outlet is communicated with one end, far away from the second cooling medium channel, of the fourth cooling medium channel.
2. The pressureless sintered silicon carbide reactor according to claim 1, wherein the first reaction chip has a first coolant through hole penetrating from the top surface to the bottom surface, the top of the first coolant through hole communicates with the third coolant channel, and the bottom of the first coolant through hole communicates with the first coolant channel.
3. The pressureless sintered silicon carbide reactor according to claim 1, wherein the second reaction chip has a second coolant-heating hole penetrating through the top surface to the bottom surface; the top of the second cold and hot medium through hole is communicated with the second cold and hot medium channel, and the bottom of the second cold and hot medium through hole is communicated with the fourth cold and hot medium channel.
4. The pressureless sintered silicon carbide reactor according to claim 1, wherein the second cooling/heating medium passage plate has a first cooling reactant passage hole formed through the top to the bottom thereof; the bottom end of the first cold reactant through hole is communicated with the first reaction channel, and the bottom end of the first cold reactant through hole is communicated with the second reaction channel.
5. The pressureless sintered silicon carbide reactor of claim 1, wherein the first reaction channel has a corrugated configuration.
6. The pressureless sintered silicon carbide reactor of claim 1, wherein the second reaction channel has a corrugated configuration.
7. A pressureless sintered silicon carbide reactor according to claim 1, wherein the first coolant-heat medium channels are corrugated.
8. A pressureless sintered silicon carbide reactor according to claim 1, wherein the second coolant-heat medium channel has a corrugated configuration.
9. A pressureless sintered silicon carbide reactor according to claim 1, wherein the reactor has a rectangular parallelepiped structure as a whole.
10. A pressureless sintered silicon carbide reactor according to claim 1, wherein the reactor has an overall ellipsoidal cylindrical configuration.
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| CN201922121715.3U CN211487612U (en) | 2019-11-29 | 2019-11-29 | Pressureless sintering carborundum reactor |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114307902A (en) * | 2022-01-09 | 2022-04-12 | 宜都市友源实业有限公司 | Microchannel reactor and method for producing dinitrotoluene |
| CN114307906A (en) * | 2022-02-16 | 2022-04-12 | 北京味食源食品科技有限责任公司 | Edible essence preparation equipment |
| CN114588847A (en) * | 2020-12-04 | 2022-06-07 | 中国科学院大连化学物理研究所 | Microreactor with double-layer microchannel heat dissipation chip and preparation method thereof |
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2019
- 2019-11-29 CN CN201922121715.3U patent/CN211487612U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114588847A (en) * | 2020-12-04 | 2022-06-07 | 中国科学院大连化学物理研究所 | Microreactor with double-layer microchannel heat dissipation chip and preparation method thereof |
| CN114307902A (en) * | 2022-01-09 | 2022-04-12 | 宜都市友源实业有限公司 | Microchannel reactor and method for producing dinitrotoluene |
| CN114307902B (en) * | 2022-01-09 | 2023-09-01 | 宜都市友源实业有限公司 | Microchannel reactor and method for producing dinitrotoluene |
| CN114307906A (en) * | 2022-02-16 | 2022-04-12 | 北京味食源食品科技有限责任公司 | Edible essence preparation equipment |
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