CN211478675U - Ultraviolet photoelectric detector for ultraviolet and infrared double-color detection - Google Patents
Ultraviolet photoelectric detector for ultraviolet and infrared double-color detection Download PDFInfo
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- CN211478675U CN211478675U CN201922156071.1U CN201922156071U CN211478675U CN 211478675 U CN211478675 U CN 211478675U CN 201922156071 U CN201922156071 U CN 201922156071U CN 211478675 U CN211478675 U CN 211478675U
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Abstract
The utility model discloses an ultraviolet photoelectric detector for ultraviolet infrared double-colored detection, including ultraviolet ray detection structure, infrared light detection structure and shielding structure, shielding structure is a cylindrical structure, and the cylindrical structure is inside to be hollow structure, and shielding structure constitutes shielding chamber with ultraviolet ray detection structure, infrared light detection structure, and the top in shielding chamber is provided with the reflection cambered surface. The utility model discloses an ultraviolet photoelectric detector is through setting up ultraviolet buffer layer, ultraviolet light absorption layer, infrared light buffer layer and infrared light absorption layer, can absorb ultraviolet light and infrared light simultaneously, but a plurality of through-hole one, through-hole two, setting up of through-hole three make light can the at utmost enter into ultraviolet light detection structure, and light absorption layer, shielding structure and reflection cambered surface have all increased the detectivity of detector to light simultaneously, promote detection effect, make it more accurate.
Description
Technical Field
The utility model relates to a photoelectric detector specifically is an ultraviolet photoelectric detector for ultraviolet infrared double-colored detection.
Background
The photodetector can convert the optical signal into an electrical signal. Photodetectors can be classified into two categories according to the different response modes of the devices to radiation or the different mechanisms of the devices' operation: one is a photon detector; another type is a thermal detector. The photoelectric detector has wide application in various fields of military and national economy. The infrared radiation sensor is mainly used for ray measurement and detection, industrial automatic control, photometric measurement and the like in visible light or near infrared wave bands; the infrared band is mainly used for missile guidance, infrared thermal imaging, infrared remote sensing and the like. Another application of the photoconductor is its use as a camera tube target. In order to avoid image blurring caused by diffusion of photogenerated carriers, high-resistance polycrystalline materials such as PbS-PbO, Sb2S3 and the like are used for the target surface of the continuous film. Other materials may take the form of a mosaic target surface, the entire target surface consisting of about 10 thousand individual detectors.
The photoelectric detector can detect ultraviolet light or infrared light independently, and at present, devices capable of detecting both lights exist, but the detection effect is not ideal. Accordingly, those skilled in the art have provided a uv photodetector for uv-ir dual color detection to solve the problems set forth in the background art described above.
Disclosure of Invention
An object of the utility model is to provide an ultraviolet photoelectric detector for ultraviolet infrared double-colored detection to solve the problem that proposes among the above-mentioned background art.
In order to achieve the above object, the utility model provides a following technical scheme:
an ultraviolet photoelectric detector for ultraviolet and infrared double-color detection comprises an ultraviolet light detection structure, an infrared light detection structure and a shielding structure, wherein the shielding structure shields infrared light or ultraviolet light in the shielding structure and reflects the infrared light and the infrared light, the ultraviolet light detection structure and the infrared light detection structure respectively absorb and detect the ultraviolet light and the infrared light, the ultraviolet light detection structure is arranged at the lower part of the shielding structure, the infrared light detection structure is arranged at the inner side of the upper part of the shielding structure, a light absorption layer is arranged at the upper end of the shielding structure and above the infrared light detection structure, the light absorption layer is particularly of a disc structure, the outer edge of the light absorption layer is arranged to be an arc surface, the arc surface can increase the reflection angle of the light;
the shielding structure is a cylindrical structure, and the cylindrical structure is inside to be hollow structure, and shielding structure constitutes the shielding chamber with ultraviolet ray detection structure, infrared light detection structure, and the shielding chamber is arranged in the ultraviolet ray of reflection light makes it enter into the ultraviolet ray detection structure, and the top in shielding chamber is provided with the reflection cambered surface, and the bottom surface of reflection cambered surface is the mirror surface, and the reflection cambered surface adopts shielding material to make, increases the reflection of ultraviolet ray.
As the utility model discloses further scheme, ultraviolet ray detection structure includes substrate layer one, and substrate layer one upper end is equipped with the ultraviolet ray buffer layer, and ultraviolet ray buffer layer upper end is equipped with the ultraviolet absorption layer, and the left side of ultraviolet ray buffer layer installs metal electrode one.
As the utility model discloses further scheme again, the infrared light detection structure includes substrate layer two, and substrate layer two's bottom joint reflection cambered surface, two upper ends of substrate layer are equipped with the infrared light buffer layer, and infrared light buffer layer upper end is equipped with infrared light absorption layer, and the infrared light absorption layer top sets up to the light absorbing layer, and metal electrode two is installed in the left side of infrared light buffer layer, and the right side of infrared light buffer layer and ultraviolet ray buffer layer passes through common metal electrode and connects.
As the utility model discloses further scheme again, a plurality of through-hole one has been seted up on the infrared light absorption layer, evenly distributed on the infrared light absorption layer of a plurality of through-hole one, and through-hole two and through-hole three have been seted up respectively to the position that corresponds through-hole one on infrared light buffer layer and the substrate layer two, the shape of through-hole one, through-hole two and through-hole three is including but not limited to adopting circularly, through-hole one, through-hole two and three constitution a plurality of passageway of through-hole, a plurality of passageway all with shield chamber intercommunication for transmit ultraviolet light to the shield intracavity, thereby absorbed by the ultraviolet light absorption layer.
Compared with the prior art, the beneficial effects of the utility model are that:
the utility model discloses an ultraviolet photoelectric detector is through setting up ultraviolet buffer layer, ultraviolet light absorption layer, infrared light buffer layer and infrared light absorption layer, can absorb ultraviolet light and infrared light simultaneously, but a plurality of through-hole one, through-hole two, setting up of through-hole three make light can the at utmost enter into ultraviolet light detection structure, and light absorption layer, shielding structure and reflection cambered surface have all increased the detectivity of detector to light simultaneously, promote detection effect, make it more accurate.
Drawings
Fig. 1 is a schematic structural diagram of an ultraviolet photodetector for ultraviolet-infrared two-color detection.
Fig. 2 is a schematic structural diagram of an infrared light absorption layer in an ultraviolet photodetector for ultraviolet and infrared dual-color detection.
Fig. 3 is a perspective view of a shielding structure in an ultraviolet photodetector for ultraviolet-infrared two-color detection.
In the figure: 1-an ultraviolet light detection structure; 11-substrate layer one; 12-an ultraviolet buffer layer; 13-ultraviolet light absorbing layer; 14-a metal electrode one; 2-infrared light detection structure; 21-substrate layer two; 22-infrared light buffer layer; 23-an infrared light absorbing layer; 24-a first through hole; 25-a second through hole; 26-through hole three; 27-metal electrode two; 3-a shielding structure; 4-a light absorbing layer; 41-arc surface; 5-a common metal electrode; 6-shielding the cavity; 7-reflecting arc surface.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
Referring to fig. 1-3, in an embodiment of the present invention, an ultraviolet photodetector for ultraviolet and infrared dual-color detection includes an ultraviolet detecting structure 1, an infrared detecting structure 2, and a shielding structure 3, wherein the shielding structure 3 shields the internal infrared or ultraviolet light from being reflected, the ultraviolet detecting structure 1 and the infrared detecting structure 2 respectively absorb and detect the ultraviolet light and the infrared light, the ultraviolet detecting structure 1 is disposed at the lower portion of the shielding structure 3, the infrared detecting structure 2 is disposed at the inner side of the upper portion of the shielding structure 3, and the upper end of the shielding structure 3 is arranged above the infrared light detection structure 2 and is provided with a light absorption layer 4, the light absorption layer 4 is a disc structure, the outer edge of the light absorption layer 4 is provided with an arc surface 41, and the arc surface 41 can increase the reflection angle of light, so that the light can better enter the light absorption layer 4;
the shielding structure 3 is a cylindrical structure, the inside of the cylindrical structure is a hollow structure, the shielding structure 3, the ultraviolet light detection structure 1 and the infrared light detection structure 2 form a shielding cavity 6, the shielding cavity 6 is used for reflecting ultraviolet light in the light to enable the ultraviolet light to enter the ultraviolet light detection structure 1, a reflecting arc surface 7 is arranged at the top of the shielding cavity 6, the bottom surface of the reflecting arc surface 7 is a mirror surface, and the reflecting arc surface 7 is made of shielding materials to increase the reflection of the ultraviolet light;
the ultraviolet light detection structure 1 comprises a substrate layer I11, wherein an ultraviolet light buffer layer 12 is arranged at the upper end of the substrate layer I11, an ultraviolet light absorption layer 13 is arranged at the upper end of the ultraviolet light buffer layer 12, and a metal electrode I14 is arranged on the left side of the ultraviolet light buffer layer 12;
the infrared light detection structure 2 comprises a second substrate layer 21, the bottom of the second substrate layer 21 is connected with the reflection cambered surface 7, the upper end of the second substrate layer 21 is provided with an infrared light buffer layer 22, the upper end of the infrared light buffer layer 22 is provided with an infrared light absorption layer 23, a light absorption layer 4 is arranged above the infrared light absorption layer 23, the left side of the infrared light buffer layer 22 is provided with a second metal electrode 27, and the right sides of the infrared light buffer layer 22 and the ultraviolet light buffer layer 12 are connected through a common;
the infrared light absorption layer 23 is provided with a plurality of first through holes 24, the plurality of first through holes 24 are uniformly distributed on the infrared light absorption layer 23, the positions, corresponding to the first through holes 24, on the infrared light buffer layer 22 and the substrate layer two 21 are respectively provided with a second through hole 25 and a third through hole 26, the shapes of the first through hole 24, the second through hole 25 and the third through hole 26 include, but are not limited to, a circle, the first through hole 24, the second through hole 25 and the third through hole 26 form a plurality of channels, and the channels are all communicated with the shielding cavity 6 and used for transmitting ultraviolet light into the shielding cavity 6, so that the ultraviolet light absorption layer 13 absorbs the ultraviolet.
The utility model discloses a theory of operation is:
when the ultraviolet photoelectric detector is used, light firstly enters the infrared light detection structure 2 in the shielding structure 3 through the light absorption layer 4, the arc surface 41 of the light absorption layer 4 is favorable for the light to enter, and the infrared light detection structure 2 reacts with infrared light to convert optical signals into electric signals which are transmitted out through the metal electrode II 27 and the common metal electrode 5;
meanwhile, ultraviolet light entering the infrared light detection structure 2 passes through the first through hole 24, the second through hole 25 and the third through hole 26 enter the shielding cavity 6, the through holes are arranged to facilitate light transmission, the shielding structure 3 enables light not to be transmitted to the outside of the detector, the reflecting cambered surface 7 further increases the light reflecting effect, more ultraviolet light detection structures 1 are enabled to enter the ultraviolet light detection structure, the situation that the ultraviolet light is weak or cannot be transmitted to the ultraviolet light detection structure 1 is avoided, the ultraviolet light converts light signals into electric signals in the ultraviolet light detection structure 1, the electric signals are transmitted out from the first metal electrode 14 and the common metal electrode 5, and the effect that the ultraviolet light and the infrared light are both detected is achieved.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can substitute or change the technical solution and the inventive concept of the present invention within the technical scope of the present invention.
Claims (6)
1. An ultraviolet photoelectric detector for ultraviolet and infrared double-color detection comprises an ultraviolet detection structure (1), an infrared detection structure (2) and a shielding structure (3), and is characterized in that the ultraviolet detection structure (1) is arranged at the lower part of the shielding structure (3), the infrared detection structure (2) is arranged on the inner side of the upper part of the shielding structure (3), a light absorption layer (4) is arranged at the upper end of the shielding structure (3) above the infrared detection structure (2), the light absorption layer (4) is particularly of a disc structure, and the outer edge of the light absorption layer (4) is provided with an arc surface (41);
the shielding structure (3) is of a cylindrical structure, the interior of the cylindrical structure is of a hollow structure, the shielding structure (3), the ultraviolet light detection structure (1) and the infrared light detection structure (2) form a shielding cavity (6), and the top of the shielding cavity (6) is provided with a reflecting cambered surface (7);
the infrared light detection structure (2) comprises a second substrate layer (21), the bottom of the second substrate layer (21) is connected with the reflection arc surface (7), the upper end of the second substrate layer (21) is provided with an infrared light buffer layer (22), the upper end of the infrared light buffer layer (22) is provided with an infrared light absorption layer (23), the upper portion of the infrared light absorption layer (23) is arranged to be a light absorption layer (4), the left side of the infrared light buffer layer (22) is provided with a second metal electrode (27), and the right sides of the infrared light buffer layer (22) and the ultraviolet light buffer layer (12) are connected through a.
2. The ultraviolet photodetector for ultraviolet-infrared double-color detection according to claim 1, wherein the bottom surface of the reflecting arc surface (7) is a mirror surface, and the reflecting arc surface (7) is made of a shielding material.
3. The ultraviolet photodetector for ultraviolet and infrared double-color detection as claimed in claim 1, wherein the infrared light absorption layer (23) is provided with a plurality of first through holes (24), and the plurality of first through holes (24) are uniformly distributed on the infrared light absorption layer (23).
4. The ultraviolet photodetector for ultraviolet and infrared double-color detection according to claim 1, wherein a through hole two (25) and a through hole three (26) are respectively formed in positions corresponding to the through hole one (24) on the infrared light buffer layer (22) and the substrate layer two (21), and the shapes of the through hole one (24), the through hole two (25) and the through hole three (26) include, but are not limited to, circular shapes.
5. The ultraviolet photodetector for ultraviolet-infrared double-color detection according to claim 4, wherein the first through hole (24), the second through hole (25) and the third through hole (26) form a plurality of channels, and the plurality of channels are communicated with the shielding cavity (6).
6. The ultraviolet photodetector for ultraviolet-infrared double-color detection as recited in claim 1, wherein the ultraviolet detecting structure (1) comprises a first substrate layer (11), an ultraviolet buffer layer (12) is disposed at an upper end of the first substrate layer (11), an ultraviolet light absorbing layer (13) is disposed at an upper end of the ultraviolet buffer layer (12), and a first metal electrode (14) is disposed at a left side of the ultraviolet buffer layer (12).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201922156071.1U CN211478675U (en) | 2019-12-02 | 2019-12-02 | Ultraviolet photoelectric detector for ultraviolet and infrared double-color detection |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201922156071.1U CN211478675U (en) | 2019-12-02 | 2019-12-02 | Ultraviolet photoelectric detector for ultraviolet and infrared double-color detection |
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| CN211478675U true CN211478675U (en) | 2020-09-11 |
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| CN201922156071.1U Expired - Fee Related CN211478675U (en) | 2019-12-02 | 2019-12-02 | Ultraviolet photoelectric detector for ultraviolet and infrared double-color detection |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110989027A (en) * | 2019-12-02 | 2020-04-10 | 安瑞创新半导体(深圳)有限公司 | Ultraviolet photoelectric detector for ultraviolet and infrared double-color detection |
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2019
- 2019-12-02 CN CN201922156071.1U patent/CN211478675U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110989027A (en) * | 2019-12-02 | 2020-04-10 | 安瑞创新半导体(深圳)有限公司 | Ultraviolet photoelectric detector for ultraviolet and infrared double-color detection |
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Granted publication date: 20200911 Termination date: 20211202 |