CN211376925U - Eddy current suppression structure - Google Patents
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- CN211376925U CN211376925U CN201922381538.2U CN201922381538U CN211376925U CN 211376925 U CN211376925 U CN 211376925U CN 201922381538 U CN201922381538 U CN 201922381538U CN 211376925 U CN211376925 U CN 211376925U
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Abstract
The utility model relates to an eddy current restraines structure, including the magnetostrictive layer, still include insulating medium layer, insulating medium layer set up in the magnetostrictive layer for thereby break the eddy current and restrain bulk acoustic wave magnetoelectric antenna eddy current loss. The utility model discloses insert insulating medium layer in the magnetostrictive layer and reduce eddy current loss, make the radiation efficiency of bulk acoustic wave magnetoelectric antenna improve, solved the problem that prior art scheme cavity air gap interval magnetostrictive layer leads to stress discontinuity, magnetoelectric antenna radiation efficiency to hang down. The insulating medium layer is used as the spacing layer, so that the soft magnetic property of the magnetostrictive layer can be improved, the coercive force of the magnetostrictive layer is effectively reduced, and the sensitivity of a radiation area is improved. Through simulation analysis, the scheme can effectively reduce the eddy current loss by more than 65%, and greatly improve the radiation efficiency of the magnetoelectric antenna.
Description
Technical Field
The utility model relates to a radio frequency micro-electromechanical system field, concretely relates to vortex restraines structure.
Background
At present, antennas commonly used in equipment such as smart phones, tablet computers, radio frequency devices and radars are electrically small antennas based on a current conduction working principle, are generally large in size and difficult to realize miniaturization, and have the defects of difficult impedance matching, low radiation efficiency and the like. The bulk acoustic wave magnetoelectric antenna radiates electromagnetic signals by using the bulk acoustic wave resonance principle and the magnetoelectric effect, fundamentally solves the problems of difficult impedance matching and low radiation efficiency of the electrically small antenna, and can realize the miniaturization of devices by using the acoustic wave resonance principle. The bulk acoustic wave magnetoelectric antenna is formed by cross compounding of a piezoelectric layer and a magnetostrictive layer.
In the bulk acoustic wave magnetoelectric antenna, a magnetostrictive layer is used as a radiation layer of a transmitting antenna, electromagnetic signals are generated in the magnetostrictive layer through an electromagnetic effect to radiate electromagnetic waves to the outside, and the energy utilization rate directly determines the radiation efficiency of the transmitting antenna. The magnetostrictive layer is usually a FeGaB magnetic film with high conductivity, and under the excitation of an internal magnetic field, large eddy current loss can be generated to influence the radiation power of the transmitting antenna. On the premise of ensuring good soft magnetic property of the magnetostrictive layer, the radiation efficiency of the magnetoelectric antenna is greatly improved by reducing eddy current loss. When the bulk acoustic wave magnetoelectric antenna is applied in a radio frequency system, excessive energy loss can be caused by eddy current loss, so that the radiation efficiency of the antenna is reduced, and the application range of the antenna is limited.
Zhi Yao and Yuanxun ethane Wang proposed a 3 DADI-FDTD-based eddy current suppression method in the title of "3D ADI-FDTD Modeling of planar form Reduction with Thin Film Ferromagnetic Material", which uses a method of dividing a magnetostrictive layer into strips to break the eddy current ring for the purpose of suppressing eddy current loss. The key technology of the method is as follows: the width of the (first) divided strip should be comparable to the thickness, so that the interrupted eddy current circuit is sufficiently small. The longitudinal direction of the (two) strips should be along the direction of the magnetic flux. An air gap is arranged between adjacent strips, and most of electromagnetic field is concentrated in the air gap due to high conductivity of the magnetostrictive layer. The structure is shown in figures 1 and 2.
Although the eddy current loss suppression method provided by the above scheme can well suppress the eddy current loss, the radiation efficiency of the magnetoelectric antenna can be greatly reduced, and the main problems are that: the first mode is that air gaps are used as a left gap, a right gap (along the y-axis direction) and an upper gap and a lower gap (along the z-axis direction) between the split strips, so that when the bulk acoustic wave magnetoelectric antenna works actually, stress cannot be continuously transmitted between the left layer, the right layer, the upper layer and the lower layer, only the magnetostrictive film at the lower layer works, no stress conduction exists in the magnetostrictive layer at the upper layer, electromagnetic waves cannot be excited, and the radiation efficiency of the whole magnetostrictive layer is greatly reduced. In the scheme, the width of each air gap along the y-axis direction is 1/5 which accounts for the width of a single magnetic film strip by 0.2 microns, and the thickness of each air gap along the z-axis direction is 1/2 which accounts for the width of the single magnetic film strip by 0.3 microns. Although the air gap with a larger size can well inhibit eddy current loss, the soft magnetic property of the whole magnetostrictive layer is reduced, and the radiation efficiency of the magnetoelectric antenna is too low.
SUMMERY OF THE UTILITY MODEL
The utility model aims to solve the technical problem that a vortex restraines structure is provided.
The utility model provides an above-mentioned technical problem's technical scheme as follows: the eddy current suppression structure comprises a magnetostrictive layer and an insulating medium layer, wherein the insulating medium layer is arranged in the magnetostrictive layer and used for breaking eddy currents.
The utility model has the advantages that: the utility model discloses insert insulating medium layer in the magnetostrictive layer and reduce eddy current loss, make the radiation efficiency of bulk acoustic wave magnetoelectric antenna improve, solved the problem that prior art scheme cavity air gap interval magnetostrictive layer leads to stress discontinuity, magnetoelectric antenna radiation efficiency to hang down. The insulating medium layer is used as the spacing layer, so that the soft magnetic property of the magnetostrictive layer can be improved, the coercive force of the magnetostrictive layer is effectively reduced, and the sensitivity of a radiation area is improved. Through simulation analysis, the scheme can effectively reduce the eddy current loss by more than 65%, and greatly improve the radiation efficiency of the magnetoelectric antenna.
On the basis of the technical scheme, the utility model discloses can also do as follows the improvement:
furthermore, a first insulating medium layer is arranged in the magnetostrictive layer along the thickness direction of the magnetostrictive layer and/or a second insulating medium layer is arranged in the magnetostrictive layer along the width direction of the magnetostrictive layer.
The beneficial effect of adopting the further proposal is that the utility model divides the eddy current into the body eddy current and the surface eddy current according to the skin effect of the induced current in the magnetostrictive layer, and the first insulating medium layer can well restrain the body eddy current, thereby reducing the eddy current loss; the second insulating medium layer can well inhibit surface eddy current, so that eddy current loss is reduced.
Furthermore, at least one first insulating medium layer is arranged in the magnetostrictive layer along the thickness direction of the magnetostrictive layer.
The beneficial effect of adopting the further scheme is that the first insulating medium layer can well restrain the body eddy current, thereby reducing the eddy current loss.
Further, the first insulating medium layer is composed of three layers which are parallel to each other, the thickness of each layer of the first insulating medium layer is 5-100nm, the magnetostrictive layer is made of a FeGaB film, the total thickness of the FeGaB film is 1 mu m, the conductivity range of the first insulating medium layer is 0-100S/m, and the first insulating medium layer is made of Al2O3、Si3N4And AlN.
The beneficial effect of adopting the further scheme is that the simulation result shows that 3 layers can solve the problem of body eddy current inhibition; the first insulating medium layer is 5-100nm, and the bulk eddy current can be well inhibited; the FeGaB film is a high-quality magnetostrictive layer material; when the insulating medium layer is made of the material, the eddy current suppression effect is good.
Further, at least one layer of the second insulating medium layer is arranged in the magnetostrictive layer along the width direction of the magnetostrictive layer.
The beneficial effect of adopting the further scheme is that the second insulating medium layer can well restrain the surface eddy current, thereby reducing the eddy current loss.
Further, the second insulating medium layers are three layers and parallel to each other, the thickness of each layer of the second insulating medium layer is 5-30nm, the magnetostrictive layer is made of a FeGaB film, the total thickness of the FeGaB film is 1 mu m, the conductivity range of the second insulating medium layer is 0-100S/m, and the second insulating medium layer is made of Al2O3、Si3N4And AlN.
The beneficial effect of adopting the further scheme is that the simulation result shows that 3 layers can solve the problem of surface eddy current inhibition; the second insulating medium layer is 5-30nm, and the surface eddy current can be well inhibited; the FeGaB film is a high-quality magnetostrictive layer material; when the insulating medium layer is made of the material, the eddy current suppression effect is good.
Furthermore, at least one first insulating medium layer is arranged in the magnetostrictive layer along the thickness direction of the magnetostrictive layer, at least one second insulating medium layer is arranged in the magnetostrictive layer along the width direction of the magnetostrictive layer, and the first insulating medium layers and the second insulating medium layers are arranged at intervals in a crossed mode.
The beneficial effect of adopting the further scheme is that the insulating medium layers alternately spaced along the thickness direction and the width direction are inserted into the magnetostrictive layer to reduce the loss of the body vortex and the surface vortex, and the insulating medium layer inserted isolation structure comprehensively considering the body vortex and the surface vortex is provided, so that the loss of the vortex of the magnetostrictive layer is minimum. The problems of stress discontinuity and low radiation efficiency of the magnetoelectric antenna caused by the air gap interval magnetostrictive layer in the prior art are solved. The insulating medium layer is used as the spacing layer, so that the soft magnetic property of the magnetostrictive layer can be improved, the coercive force of the magnetostrictive layer is effectively reduced, and the sensitivity of a radiation area is improved. Through simulation analysis, the scheme can effectively reduce the eddy current loss by more than 65%, and greatly improve the radiation efficiency of the magnetoelectric antenna.
Further, the first insulating medium layers are three layers and are parallel to each other, the second insulating medium layers are three layers and are parallel to each other, the thickness of each first insulating medium layer is 5-100nm, the thickness of each second insulating medium layer is 5-30nm, the magnetostrictive layers are made of FeGaB films, the total thickness of the FeGaB films is 1 mu m, the conductivity ranges of the first insulating medium layers and the second insulating medium layers are 0-100S/m, and the first insulating medium layers and the second insulating medium layers are made of Al2O3、Si3N4And AlN.
The beneficial effect of adopting the further scheme is that the simulation result shows that 3 layers can solve the problem of surface eddy current inhibition, the thickness of the first insulating medium layer is 5-100nm, the thickness of the second insulating medium layer is 5-30nm, the surface eddy current can be well inhibited, the limitation can inhibit the eddy current loss in the magnetic film on the premise of ensuring that the size of the insulating medium layer is as small as possible, and a magnetic film structure inserted with the insulating medium with the minimum size for inhibiting the eddy current is provided, and the structure can effectively inhibit the eddy current loss in the magnetostrictive layer, simultaneously can effectively ensure the good soft magnetic characteristic of the magnetostrictive layer, improve the radiation efficiency of the magnetoelectric antenna, and enable the bulk acoustic wave magnetoelectric antenna to be more suitable for the application occasions in wireless communication; the FeGaB film is a high-quality magnetostrictive layer material; when the insulating medium layer is made of the material, the eddy current suppression effect is good.
The utility model discloses still relate to a magnetoelectric antenna, including last electrode, still include the vortex restraines the structure, the vortex restraines the structure setting and is in on the electrode.
The utility model discloses still relate to a preparation method of vortex suppression structure, include, step 1: depositing a magnetostrictive layer on a machine body (an upper electrode of the bulk acoustic wave resonator) by using a magnetron sputtering method; step 2: depositing a first insulating medium layer along the thickness direction of the magnetostrictive layer formed in the step 1 by using a magnetron sputtering method; and step 3: depositing a magnetostrictive layer on the first insulating medium layer formed in the step 2 again; and 4, step 4: directly obtaining the eddy current suppression structure, or repeating the steps 2-3 at least once to obtain the eddy current suppression structure; or, step a: depositing a magnetostrictive layer on a machine body (an upper electrode of the bulk acoustic wave resonator) by using a magnetron sputtering method; step b: uniformly covering a layer of photoresist on the magnetostrictive layer by using a photoresist spinner, and then sequentially carrying out prebaking, exposure and development; step c: etching at least one groove in the thickness direction of the magnetostrictive layer on the structure formed in the step b by using dry etching; step d: sputtering the structure formed in the step c by using a magnetron sputtering method to form at least one second insulating medium layer in the thickness direction of the magnetostrictive layer; step e: removing the photoresist on the surface of the magnetostrictive layer by adopting a metal stripping process; step f: grinding the second insulating medium layer higher than the surface of the magnetostrictive layer by chemical mechanical grinding; or, step A: depositing a magnetostrictive layer on the (upper electrode of the bulk acoustic wave resonator) body by using a magnetron sputtering method; and B: depositing a first insulating medium layer in the thickness direction of the magnetostrictive layer formed in the step A on the magnetostrictive layer formed in the step A by using a magnetron sputtering method; and C: depositing a magnetostrictive layer on the first insulating medium layer formed in the step B; step D: directly obtaining a first insulating medium layer structure, or repeating the steps B-C at least once to obtain the first insulating medium layer structure; step E: uniformly covering a layer of photoresist on the first insulating medium layer structure by using a photoresist spinner, and then sequentially carrying out prebaking, exposure and development; step F: etching at least one groove in the width direction of the magnetostrictive layer on the structure formed in the step E by using dry etching; step G: sputtering the structure formed in the step F by using a magnetron sputtering method to form at least one layer of the second insulating medium layer in the width direction of the magnetostrictive layer; step H: removing the photoresist on the surface of the first insulating medium layer structure formed in the step D by adopting a metal stripping process; step I: and D, grinding the second insulating medium layer higher than the surface of the first insulating medium layer structure formed in the step D by utilizing chemical mechanical grinding.
The method has the advantages that the production of the eddy current suppression structure can be simply and quickly realized on the premise of ensuring the eddy current suppression function, so that the radiation efficiency of the magnetoelectric antenna is improved.
Drawings
FIG. 1 is a diagram of a prior art eddy current loss suppression structure;
FIG. 2 is a diagram of a prior art eddy current loss suppression structure;
fig. 3 is a schematic view of the structure of the magnetostrictive layer eddy current suppression of the present invention;
fig. 4 is a diagram of the structure of the magnetostrictive layer eddy current suppression of the present invention;
fig. 5 is a 3 × 3 eddy current suppressing structure of the magnetostrictive layer of the present invention;
FIG. 6 is a process flow diagram of the vortex suppression structure of the present invention;
FIG. 7 shows Al of the present invention2O3The effect of film thickness on surface loss is shown schematically;
FIG. 8 shows Al of the present invention2O3The influence of the number of layers of the film on the surface loss is shown schematically;
FIG. 9 shows Al of the present invention2O3The effect of film thickness on in vivo loss is shown schematically;
FIG. 10 shows Al of the present invention2O3The influence of the number of layers of the film on the loss in the body is shown schematically;
FIG. 11 shows different metals of the present invention2O3Thickness versus total loss density.
In the drawings, the components represented by the respective reference numerals are listed below:
1. the bulk acoustic wave resonator comprises a magnetostrictive layer 2, a first insulating medium layer 3, a second insulating medium layer 4, a bulk acoustic wave resonator upper electrode 5, photoresist 6, a mask plate 7 and an air gap.
Detailed Description
The principles and features of the present invention are described below in conjunction with the following drawings, the examples given are only intended to illustrate the present invention and are not intended to limit the scope of the present invention.
And respectively simulating the surface eddy current and the body eddy current of the magnetostrictive layer by using Comsol simulation software, wherein the verification results are respectively shown in the figure.
As shown in FIG. 7, Al2O3The surface loss density of the thickness (insulating medium layer) within 5nm is obviously reduced, and then although the surface loss density is gradually reduced, the reduction rate is basically maintained within 5 percent, so that the surface eddy current is well inhibited. Thus, Al2O3The eddy current loss of the surface with the thickness within 5nm is well inhibited, and Al can be properly thickened according to the process conditions2O3And (4) thickness. In the presence of Al remaining inserted2O3Under the condition that the total thickness of the insulating layer is not changed, the insulating layer is divided into 2 layers, 3 layers, 4 layers and 5 layers which are uniformly spaced in the FeGaB metal layer, and when the total thickness is taken to be 100nm (which can be properly thickened according to the process conditions) in figure 8, different Al layers2O3The surface eddy current density variation trend corresponding to the number of insulating layers is that the surface loss density is obviously reduced along with the increase of the number of insulating layers, but the reduction rate after 3 insulating layers is lower than 20%, and the reduction rate gradually tends to be gentle. Therefore, 3 layers have been sufficient to solve the problem of surface eddy current suppression.
According to the simulation result, different Al2O3The trend of the change in the bulk loss density according to the thickness is shown in fig. 9. Adding Al with the thickness of 5nm2O3After that, the loss density in the body is reduced by more than 60 percent, in Al2O3When the thickness is about 30nm, the eddy current loss density is minimum, and then the eddy current loss density has a slight growth trend, and the growth rate is less than 1%. Thus, for Al2O3The thickness of the insulating layer can be well inhibited when the volume eddy current is 5-30 nm. Mixing Al2O3The total thickness of the layers was set to 30nm at the minimum of bulk eddy current loss density, dividing it into 2, 3, 4, 5 layers, and the results are shown in fig. 10. With Al2O3The increase of the insulating layer number, the obvious reduction of the bulk eddy current loss density and the same surface loss densitySimilarly, the decrease rate after 3 layers gradually decreases.
Considering the optimum separation method for the surface eddy current and the bulk eddy current, respectively, the surface eddy current and the bulk eddy current were calculated by using the 3 × 3 cross-separation method as shown in fig. 6, and the simulation result of the total loss density is shown in fig. 112O3When the thickness is 10nm, inserting 3 layers of Al along the thickness direction (z-axis direction)2O3Insulating layer and 3-layer Al interposed in the width direction (y-axis direction)2O3The total loss density of the insulating layer is reduced by about 10% and 47% respectively, and the reduction rate of the cross 3 × 3 is 65%, so that the eddy current suppression efficiency is highest, and therefore, the cross 3 × 3 method is the optimal method for eddy current suppression.
Example 1
As the basic scheme of the utility model discloses a 3-11, as the utility model discloses a vortex restraines structure, including magnetostrictive layer 1, still include dielectric layer, dielectric layer set up in magnetostrictive layer 1 is interior for thereby break the vortex and restrain bulk acoustic wave magnetoelectric antenna eddy current loss.
As a further solution of this embodiment, as shown in fig. 3, at least one layer of the first insulating medium layer 2 is disposed in the magnetostrictive layer 1 along the thickness direction thereof.
As a further scheme of this embodiment, the first insulating medium layer 2 is three layers and parallel to each other, the thickness of each layer of the first insulating medium layer 2 is 5-100nm, the magnetostrictive layer 1 is made of a FeGaB film, the total thickness of the FeGaB film is 1 μm, the conductivity range of the first insulating medium layer 2 is 0-100S/m, and the first insulating medium layer 2 is made of Al2O3、Si3N4And AlN.
Specifically, as shown in fig. 3, an arrow indicates a magnetic flux direction, and the first insulating medium layer is disposed in parallel with the XOY plane (thickness direction), thereby fulfilling its function of breaking eddy currents.
As shown in fig. 3 and 6, the method for preparing the eddy current suppressing structure, step 1: depositing a magnetostrictive layer 1 on an upper electrode of the bulk acoustic resonator by a magnetron sputtering method; step 2: depositing a first insulating medium layer 2 along the thickness direction of the magnetostrictive layer 1 formed in the step 1 by using a magnetron sputtering method; and step 3: depositing a magnetostrictive layer 1 on the first insulating medium layer 2 formed in the step 2 again; and 4, step 4: and repeating the steps for 2 times to obtain the eddy current inhibiting structure.
Example 2
As the basic scheme of the utility model discloses a 3-11, as the utility model discloses a vortex restraines structure, including magnetostrictive layer 1, still include dielectric layer, dielectric layer set up in magnetostrictive layer 1 is interior for thereby break the vortex and restrain bulk acoustic wave magnetoelectric antenna eddy current loss.
As a further solution of this embodiment, as shown in fig. 4, at least one layer of the second insulating medium layer 3 is disposed in the magnetostrictive layer 1 along the width direction thereof.
As a further scheme of this embodiment, the second insulating medium layer 3 is three layers and parallel to each other, the thickness of each layer of the second insulating medium layer 3 is 5-30nm, the magnetostrictive layer 1 is made of a FeGaB film, the total thickness of the FeGaB film is 1 μm, the conductivity range of the second insulating medium layer 3 is 0-100S/m, and the second insulating medium layer 3 is made of Al2O3、Si3N4And AlN.
Specifically, as shown in fig. 4, the arrow indicates the magnetic flux direction, and the second insulating medium layer is arranged in parallel to the XOZ plane (width direction), so as to realize the function of breaking the eddy current; while the insulating layer is arranged parallel to the ZOY plane (length direction) and cannot interrupt the eddy current.
As shown in fig. 4 and 6, the method for preparing the eddy current suppressing structure, step a: depositing a magnetostrictive layer 1 on an upper electrode of the bulk acoustic resonator by a magnetron sputtering method; step b: uniformly covering a layer of photoresist 5 on the magnetostrictive layer 1 by using a photoresist spinner, and then sequentially carrying out prebaking, exposure and development; step c: etching 3 grooves in the thickness direction of the magnetostrictive layer 1 on the structure formed in the step b by using dry etching; step d: sputtering the structure formed in the step c by using a magnetron sputtering method to form 3 second insulating medium layers 3 in the thickness direction of the magnetostrictive layer 1; step e: removing the photoresist 5 on the surface of the magnetostrictive layer 1 by adopting a metal stripping process; step f: and grinding the second insulating medium layer 3 higher than the surface of the magnetostrictive layer 1 by utilizing chemical mechanical grinding. In the method, a mask plate 6 is placed on the photoresist before etching so as to ensure that the non-groove part is not etched.
Example 3
As the basic scheme of the utility model discloses a 3-11, as the utility model discloses a vortex restraines structure, including magnetostrictive layer 1, still include dielectric layer, dielectric layer set up in magnetostrictive layer 1 is interior for thereby break the vortex and restrain bulk acoustic wave magnetoelectric antenna eddy current loss.
As shown in fig. 5 and 6, as a further solution of this embodiment, at least one first insulating medium layer 2 is disposed in the magnetostrictive layer 1 along the thickness direction thereof, at least one second insulating medium layer 3 is disposed in the magnetostrictive layer 1 along the width direction thereof, and the first insulating medium layers 2 and the second insulating medium layers 3 are disposed at intervals in a crossing manner.
As shown in fig. 5 and 6, as a further scheme of this embodiment, the first insulating medium layer 2 is three layers and parallel to each other, the second insulating medium layer 3 is three layers and parallel to each other, the thickness of each layer of the first insulating medium layer 2 is 5 to 100nm, the thickness of each layer of the second insulating medium layer 3 is 5 to 30nm, the magnetostrictive layer 1 is made of a FeGaB film, the total thickness of the FeGaB film is 1 μm, the conductivity ranges of the first insulating medium layer 2 and the second insulating medium layer 3 are 0 to 100S/m, and both the first insulating medium layer 2 and the second insulating medium layer 3 are made of Al2O3、Si3N4And AlN.
Specifically, as shown in fig. 5, the arrow indicates the magnetic flux direction, and the first insulating medium layer is disposed parallel to the XOY plane (thickness direction), thereby performing its function of breaking eddy currents; the second insulating layer is disposed parallel to the ZOX plane (width direction) to perform its function of breaking eddy currents, while the insulating layer is parallel to the ZOY plane (length direction) and does not break eddy currents.
As shown in fig. 5 and 6, the method for manufacturing the eddy current suppressing structure includes the steps of: depositing a magnetostrictive layer 1 on an upper electrode of the bulk acoustic wave resonator by a magnetron sputtering method; and B: depositing a first insulating medium layer 2 in the thickness direction of the magnetostrictive layer 1 formed in the step A on the magnetostrictive layer 1 formed in the step A by using a magnetron sputtering method; and C: depositing a magnetostrictive layer 1 on the first insulating medium layer 2 formed in the step B; step D: repeating the steps B-C twice to obtain the first insulating medium layer structure; step E: uniformly covering a layer of photoresist 5 on the first insulating medium layer structure by using a photoresist spinner, and then sequentially carrying out prebaking, exposure and development; step F: etching at least one groove in the width direction of the magnetostrictive layer 1 on the structure formed in the step E by using dry etching; step G: sputtering the structure formed in the step F by using a magnetron sputtering method to form at least one layer of the second insulating medium layer 4 in the width direction of the magnetostrictive layer 1; step H: removing the photoresist 5 on the surface of the first insulating medium layer structure formed in the step D by adopting a metal stripping process; step I: and D, grinding the second insulating medium layer 3 higher than the surface of the first insulating medium layer structure formed in the step D by utilizing chemical mechanical grinding. In the method, a mask plate 6 is placed on the photoresist before etching so as to ensure that the non-groove part is not etched.
The methods used in examples 1-3 are all prior art in the field.
The method for inhibiting the eddy current loss of the bulk acoustic wave magnetoelectric antenna comprises the following steps: the method for suppressing the bulk eddy current in the magnetostrictive layer adopts the method that an insulating medium layer is inserted along the thickness direction (z-axis direction), as shown in the attached figure 3; the method for suppressing the mid-plane eddy current of the magnetostrictive layer adopts the method that an insulating medium layer is inserted along the width direction (y-axis direction), as shown in figure 4; the method for suppressing the overall eddy current in the magnetostrictive layer employs inserting an insulating medium layer in the thickness direction (z-axis direction) and the width direction (y-axis direction) at the same time, as shown in fig. 5.
The magnetic material in the magnetostrictive layer is a FeGaB film, the thickness is 1 μm, and the surface area is 100 μm multiplied by 100 μm.
The conductivity range of the insulating medium layer is 0-100S/m, such as Al2O3、Si3N4、AlN。
The number of layers of the insulating medium layers inserted in the thickness direction and the width direction is 3 multiplied by 3 respectively.
The bulk vortex suppression method is characterized in that the thickness of an inserted insulating medium layer along the thickness direction is 5-30nm, and the number of separation layers is 3.
The surface eddy current restraining method inserts the insulating medium layer along the width direction, the width of the insulating medium layer is 5-100nm, and the number of the separation layers is 3. As shown in fig. 6.
The step of inserting the insulating medium layer along the width direction is to etch the middle groove through a photoetching process and then fill the insulating medium layer by utilizing a physical vapor deposition method. The photoetching process adopts reactive ion etching.
The following detailed description of the embodiments of the present invention is made with reference to the accompanying fig. 6:
FIG. 6 is a process flow diagram of a vortex suppression structure.
Step 1: and depositing a FeGaB magnetic film on the upper electrode of the bulk acoustic wave resonator by magnetron sputtering, wherein the thickness of the FeGaB magnetic film is 500 nm.
Step 2: depositing Al on FeGaB magnetic film by magnetron sputtering method2O3Insulating layer of Al2O3The thickness of the insulating layer is 5-30 nm.
And step 3: in Al2O3And a FeGaB magnetic film is deposited on the insulating layer, and the thickness of the magnetic film is 500 nm.
And 4, step 4: and uniformly covering a layer of photoresist on the FeGaB magnetic film by using a photoresist spinner, prebaking, exposing and developing. The photoresist is positive photoresist.
And 5: and etching a groove on the magnetostrictive layer by dry etching.
Step 6: sputtering Al in magnetostrictive layer by magnetron sputtering method2O3An insulating layer.
And 7: and removing the photoresist on the surface of the FeGaB magnetic film by adopting a metal stripping process.
And 8: chemical mechanical polishing is utilized to enable Al higher than the surface of the FeGaB magnetic film2O3The insulating layer 3 is ground flat.
The utility model provides a solve above-mentioned technical defect, provide a bulk acoustic wave magnetoelectric antenna eddy current loss suppression method and structure. According to the method, the insulating media which are alternately arranged in the transverse direction and the longitudinal direction are inserted into the magnetostrictive layer to inhibit the eddy current loss, the eddy current loss in the magnetic film is inhibited on the premise that the size of the insulating medium layer is ensured to be as small as possible, and the magnetic film structure which is inserted with the insulating medium with the minimum size and used for inhibiting the eddy current is provided. The structure can effectively inhibit eddy current loss in the magnetostrictive layer, effectively ensure good soft magnetic characteristics of the magnetostrictive layer, improve the radiation efficiency of the magnetoelectric antenna and enable the bulk acoustic wave magnetoelectric antenna to be more suitable for application occasions in wireless communication. The utility model discloses skin effect according to the induced current in the magnetostrictive layer divides into the vortex with the vortex and divides into body vortex and face vortex, has proposed the two method of keeping apart of inserting insulating medium layer of comprehensive consideration to constructed a magnetic film structure that inserts minimum dimension insulating medium and be used for suppressing the vortex, guaranteed that eddy current loss reaches the minimum.
The utility model discloses insert along thickness and along alternate spaced Al of width direction in magnetostrictive layer2O3The insulating layer reduces the bulk eddy current and surface eddy current loss of the insulating layer, and the eddy current loss of the magnetostrictive layer is minimized. The problems of stress discontinuity and low radiation efficiency of the magnetoelectric antenna caused by the air gap interval magnetostrictive layer in the prior art are solved. Using Al2O3The insulating layer is used as a spacing layer, so that the soft magnetic property of FeGaB can be improved, the coercive force of the FeGaB is effectively reduced, and the sensitivity of a radiation area is improved. Through simulation analysis, the scheme can effectively reduce the eddy current loss by more than 65%, and greatly improve the radiation efficiency of the magnetoelectric antenna.
The above description is only for the preferred embodiment of the present invention, and is not intended to limit the present invention, and any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present invention should be included within the protection scope of the present invention.
Claims (6)
1. An eddy current suppressing structure comprises a magnetostrictive layer (1), and is characterized by further comprising an insulating medium layer, wherein the insulating medium layer is arranged in the magnetostrictive layer (1) and used for breaking eddy current; a first insulating medium layer (2) is arranged in the magnetostrictive layer (1) along the thickness direction of the magnetostrictive layer, and a second insulating medium layer (3) is arranged in the magnetostrictive layer (1) along the width direction of the magnetostrictive layer.
2. The eddy current suppressing structure according to claim 1, wherein at least one layer of the first insulating medium layer (2) is provided in the magnetostrictive layer (1) in a thickness direction thereof.
3. The eddy current suppressing structure according to claim 2, wherein the first insulating medium layer (2) is three layers and parallel to each other, the thickness of each layer of the first insulating medium layer (2) is 5-100nm, the material of the magnetostrictive layer (1) is a FeGaB film, the total thickness of the FeGaB film is 1 μm, the conductivity of the first insulating medium layer (2) is in the range of 0-100S/m, and the first insulating medium layer (2) is made of Al2O3、Si3N4And AlN.
4. The eddy current suppressing structure according to claim 1, wherein at least one layer of the second insulating medium (3) is provided in the magnetostrictive layer (1) in the width direction thereof.
5. The eddy current suppression structure according to claim 4, wherein the second insulating medium layer (3) is three layers and parallel to each other, the thickness of each second insulating medium layer (3) is 5-30nm, the material of the magnetostrictive layer (1) is FeGaB film, the total thickness of the FeGaB film is 1 μm, the conductivity of the second insulating medium layer (3) is in the range of 0-100S/m, and the second insulating medium layer (3) is made of Al2O3、Si3N4And AlN.
6. A magnetoelectric antenna comprising an upper electrode, characterized by further comprising the eddy current suppressing structure according to any one of claims 1 to 5, which is provided on the upper electrode.
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| CN201922381538.2U CN211376925U (en) | 2019-12-26 | 2019-12-26 | Eddy current suppression structure |
| PCT/CN2020/091786 WO2021128720A1 (en) | 2019-12-26 | 2020-05-22 | Eddy current suppression structure and manufacturing method therefor |
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| CN201922381538.2U CN211376925U (en) | 2019-12-26 | 2019-12-26 | Eddy current suppression structure |
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