CN211352159U - Resonance suppression structure and power amplifier - Google Patents
Resonance suppression structure and power amplifier Download PDFInfo
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- CN211352159U CN211352159U CN202020029087.6U CN202020029087U CN211352159U CN 211352159 U CN211352159 U CN 211352159U CN 202020029087 U CN202020029087 U CN 202020029087U CN 211352159 U CN211352159 U CN 211352159U
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Abstract
The utility model discloses a resonance restraines structure and power amplifier, resonance restraines the microstrip line that the structure includes the dielectric-slab and locates the top surface of dielectric-slab, the microstrip line includes that first vertical section and symmetry set up two in the both sides of first vertical section and walk the line, it includes first horizontal section to walk the line, the vertical section of second, the horizontal section of second and the vertical section of third, first vertical section is connected to the one end of first horizontal section, the middle part region of the vertical section of second is connected to the other end of first horizontal section, the both ends of the vertical section of second are equipped with the horizontal section of second respectively, the one end that the vertical section of second was kept away from to the horizontal section of second is equipped with the vertical section of third. The beneficial effects of the utility model reside in that: a ferrite core is omitted, so that the design cost can be reduced; a high-impedance quarter-wavelength transmission line is omitted, so that the circuit area can be reduced, and miniaturization is realized; multiple stages of resonant cells may be cascaded to broaden the rejection band; can be independently designed into a device for standard power amplifier design; simple structure and easy manufacture.
Description
Technical Field
The utility model relates to a power amplifier technical field especially relates to resonance suppression structure and power amplifier.
Background
The addition of rf chokes 81 or high impedance quarter wave transmission lines at the input and output to suppress the transmission of high frequency signals to the dc power supply is encountered in power amplifier designs. As shown in fig. 1 and 2, a conventional circuit of a power amplifier generally includes an input terminal, a first blocking capacitor 1, an input matching network 2, a bias power supply 3, a transistor 4, a main power supply 5, an output matching network 6, a second blocking capacitor 7, an output terminal, and two rf chokes 81 or two high impedance transmission lines 82, wherein the input terminal, the first blocking capacitor 1, the input matching network 2, the transistor 4, the output matching network 6, the second blocking capacitor 7, and the output terminal are connected in series, the bias power supply 3 is connected to the output terminal of the input matching network 2 through one rf choke 81 or high impedance transmission line 82, the main power supply 5 is connected to the input terminal of the output matching network 6 through another rf choke 81 or high impedance transmission line 82, and the transistor 4 is grounded.
The rf choke 81 generally needs ferrite as a core material, which is expensive to manufacture, and the quarter-wavelength high-impedance transmission line 82 increases the circuit area, so a new type of resonance suppression structure 9 needs to be provided to replace the rf choke 81/high-impedance transmission line 82.
SUMMERY OF THE UTILITY MODEL
The utility model discloses the technical problem that will solve is: a small resonance suppressing structure with a low manufacturing cost and a power amplifier having the same are provided.
In order to solve the technical problem, the utility model discloses a technical scheme be: the resonance suppression structure comprises a dielectric plate and a microstrip line arranged on the top surface of the dielectric plate, wherein the microstrip line comprises a first vertical section and two symmetrical wiring lines arranged on two sides of the first vertical section, each wiring line comprises a first transverse section, a second vertical section, a second transverse section and a third vertical section, one end of the first transverse section is connected with the first vertical section, the other end of the first transverse section is connected with the middle region of the second vertical section, the two ends of the second vertical section are respectively provided with the second transverse section, and one end of the second transverse section, far away from the second vertical section, is provided with the third vertical section.
Furthermore, one end, far away from the second vertical section, of the second transverse section is close to the first vertical section.
Furthermore, one end, far away from the second transverse section, of the third vertical section is arranged close to the first transverse section.
Further, the two second transverse segments in each of the traces are symmetrical with respect to the first transverse segment.
Further, the two third vertical segments in each of the traces are symmetrical with respect to the first horizontal segment.
Further, the connection position of the first transverse segment and the first vertical segment is located at the midpoint of the first vertical segment.
Furthermore, the bottom surface of the medium plate is provided with a ground layer.
Further, the dielectric plate is a PCB.
A power amplifier includes the resonance suppression structure.
The beneficial effects of the utility model reside in that:
1. a ferrite core is omitted, so that the design cost can be reduced;
2. a high-impedance quarter-wavelength transmission line is omitted, so that the circuit area can be reduced, and miniaturization is realized;
3. multiple stages of resonant cells may be cascaded to broaden the rejection band;
4. can be independently designed into a device for standard power amplifier design;
5. simple structure and easy manufacture.
Drawings
Fig. 1 is a simplified circuit diagram of a prior art power amplifier employing rf chokes;
FIG. 2 is a simplified circuit diagram of a prior art power amplifier employing a high impedance transmission line;
fig. 3 is a simplified circuit diagram of a power amplifier according to a first embodiment of the present invention;
fig. 4 is a top view of a resonance suppression structure according to a first embodiment of the present invention;
fig. 5 is a front view of a resonance suppression structure according to a first embodiment of the present invention.
Description of reference numerals:
1. a first blocking capacitor; 2. inputting a matching network; 3. a bias power supply; 4. a transistor; 5. a main power supply; 6. an output matching network; 7. a second blocking capacitor; 81. a radio frequency choke; 82. a high impedance transmission line; 9. a resonance suppression structure; 91. a dielectric plate; 92. a first vertical section; 93. a first transverse segment; 94. a second vertical section; 95. a second transverse segment; 96. a third vertical section; 97. the earth formation.
Detailed Description
In order to explain the technical content, the objects and the effects of the present invention in detail, the following description is made with reference to the accompanying drawings in combination with the embodiments.
Referring to fig. 3 to 5, the resonance suppressing structure 9 includes a dielectric board 91 and a microstrip line disposed on a top surface of the dielectric board 91, where the microstrip line includes a first vertical section 92 and two routing lines symmetrically disposed on two sides of the first vertical section 92, the routing lines include a first horizontal section 93, a second vertical section 94, a second horizontal section 95 and a third vertical section 96, one end of the first horizontal section 93 is connected to the first vertical section 92, the other end of the first horizontal section 93 is connected to a middle area of the second vertical section 94, two ends of the second vertical section 94 are respectively provided with the second horizontal section 95, and one end of the second horizontal section 95 away from the second vertical section 94 is provided with the third vertical section 96.
From the above description, the beneficial effects of the present invention are: the ferrite magnetic core is omitted, so that the cost can be reduced; a high-impedance quarter-wavelength transmission line is omitted, so that the circuit area can be reduced, and miniaturization is realized; multiple stages of resonant cells may be cascaded to broaden the rejection band; can be independently designed into a device for standard power amplifier design; simple structure and easy manufacture.
Further, an end of the second transverse section 95 far from the second vertical section 94 is disposed near the first vertical section 92.
Further, an end of the third vertical section 96 far from the second horizontal section 95 is disposed near the first horizontal section 93.
Further, the two second transverse segments 95 in each of the traces are symmetrical with respect to the first transverse segment 93.
Further, the two third vertical segments 96 in each of the traces are symmetrical with respect to the first horizontal segment 93.
Further, the connection point of the first transverse segment 93 and the first vertical segment 92 is located at the midpoint of the first vertical segment 92.
Further, a ground layer 97 is provided on the bottom surface of the dielectric plate 91.
Further, the dielectric board 91 is a PCB board.
A power amplifier comprising the above resonance suppression structure 9.
As can be seen from the above description, the power amplifier using the resonance suppression structure 9 has the advantages of small size and low cost.
Example one
Referring to fig. 3 to 5, a first embodiment of the present invention is: as shown in fig. 3, the circuit of the power amplifier includes an input terminal, a first dc blocking capacitor 1, an input matching network 2, a bias power supply 3, a transistor 4, a main power supply 5, an output matching network 6, a second dc blocking capacitor 7, an output terminal, and two resonance suppression structures 9, wherein the input terminal, the first dc blocking capacitor 1, the input matching network 2, the transistor 4, the output matching network 6, the second dc blocking capacitor 7, and the output terminal are sequentially connected in series, the bias power supply 3 is connected to the output terminal of the input matching network 2 through one resonance suppression structure 9, the main power supply 5 is connected to the input terminal of the output matching network 6 through the other resonance suppression structure 9, and the transistor 4 is grounded.
As shown in fig. 4, the resonance suppressing structure 9 includes a dielectric slab 91 and a microstrip line disposed on the top surface of the dielectric slab 91, where the microstrip line includes a first vertical section 92 and two routing lines symmetrically disposed on two sides of the first vertical section 92, the routing lines include a first horizontal section 93, a second vertical section 94, a second horizontal section 95 and a third vertical section 96, one end of the first horizontal section 93 is connected to the first vertical section 92, the other end of the first horizontal section 93 is connected to the middle area of the second vertical section 94, two ends of the second vertical section 94 are respectively provided with the second horizontal section 95, and one end of the second horizontal section 95, which is far away from the second vertical section 94, is provided with the third vertical section 96. In detail, one end of a first vertical section 92 in one of the resonance suppression structures 9 is connected to the bias power supply 3, and the other end of the first vertical section 92 is connected to the output end of the input matching network 2; one end of a first vertical section 92 in the other resonance suppression structure 9 is connected to the main power supply 5, and the other end of the first vertical section 92 is connected to the input end of the output matching network 6.
One end of the second transverse segment 95 far from the second transverse segment 94 is disposed close to the first transverse segment 92, one end of the third vertical segment 96 far from the second transverse segment 95 is disposed close to the first transverse segment 93, two of the second transverse segments 95 in each of the routing lines are symmetrical with respect to the first transverse segment 93, two of the third vertical segments 96 in each of the routing lines are symmetrical with respect to the first transverse segment 93, and a joint of the first transverse segment 93 and the first vertical segment 92 is located at a midpoint of the first vertical segment 92.
Optionally, the dielectric board 91 is a PCB; as shown in fig. 5, a ground layer 97 is disposed on the bottom surface of the dielectric plate 91, and the ground layer 97 is not connected to the microstrip line. The formation 97 functions to: form an electric field with the microstrip line to conduct signals.
To sum up, the utility model provides a resonance restraines structure and power amplifier has simple structure, makes easily, cost of manufacture is low, multiple advantages such as small, can also cascade multistage resonance unit and widen the inhibition frequency band to can independently design into the device and be used for standard power amplifier design.
The above mentioned is only the embodiment of the present invention, and not the limitation of the patent scope of the present invention, all the equivalent transformations made by the contents of the specification and the drawings, or the direct or indirect application in the related technical field, are included in the patent protection scope of the present invention.
Claims (9)
1. A resonance suppression structure, characterized by: the microstrip line comprises a dielectric plate and a microstrip line arranged on the top surface of the dielectric plate, the microstrip line comprises a first vertical section and two symmetrical lines arranged on two sides of the first vertical section, the lines comprise a first transverse section, a second vertical section, a second transverse section and a third vertical section, one end of the first transverse section is connected with the first vertical section, the other end of the first transverse section is connected with the middle region of the second vertical section, two ends of the second vertical section are respectively provided with the second transverse section, and one end of the second vertical section is provided with the third vertical section.
2. The resonance suppression structure according to claim 1, characterized in that: one end, far away from the second vertical section, of the second transverse section is close to the first vertical section.
3. The resonance suppression structure according to claim 1, characterized in that: one end, far away from the second transverse section, of the third vertical section is arranged close to the first transverse section.
4. The resonance suppression structure according to claim 1, characterized in that: the two second transverse sections in each track are symmetrical relative to the first transverse section.
5. The resonance suppression structure according to claim 1, characterized in that: two third vertical sections in each routing line are symmetrical relative to the first transverse section.
6. The resonance suppression structure according to claim 1, characterized in that: the joint of the first transverse segment and the first vertical segment is positioned at the midpoint of the first vertical segment.
7. The resonance suppression structure according to claim 1, characterized in that: and the bottom surface of the medium plate is provided with a stratum.
8. The resonance suppression structure according to claim 1, characterized in that: the dielectric plate is a PCB.
9. A power amplifier, characterized by: comprising a resonance suppressing structure as defined in any one of claims 1-8.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020029087.6U CN211352159U (en) | 2020-01-07 | 2020-01-07 | Resonance suppression structure and power amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020029087.6U CN211352159U (en) | 2020-01-07 | 2020-01-07 | Resonance suppression structure and power amplifier |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN211352159U true CN211352159U (en) | 2020-08-25 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202020029087.6U Active CN211352159U (en) | 2020-01-07 | 2020-01-07 | Resonance suppression structure and power amplifier |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN211352159U (en) |
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2020
- 2020-01-07 CN CN202020029087.6U patent/CN211352159U/en active Active
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