CN211255241U - Bonding structure for low-stress MEMS packaging and packaging structure - Google Patents
Bonding structure for low-stress MEMS packaging and packaging structure Download PDFInfo
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- CN211255241U CN211255241U CN201922009546.4U CN201922009546U CN211255241U CN 211255241 U CN211255241 U CN 211255241U CN 201922009546 U CN201922009546 U CN 201922009546U CN 211255241 U CN211255241 U CN 211255241U
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Abstract
The utility model relates to a low stress MEMS encapsulates technical field, especially relates to a bonding structure and packaging structure for low stress MEMS encapsulates. The utility model relates to a low stress MEMS encapsulates technical field, especially relates to a three-dimensional encapsulation adhesive structure and packaging structure to inertial sensor's low stress MEMS encapsulation. The MEMS packaging structure for low stress comprises an MEMS chip and an MEMS base, the MEMS chip is pasted on the MEMS base through the bonding structure for low stress MEMS packaging of the first aspect of the utility model. The bonding structure and the packaging structure for low-stress MEMS packaging have good stress isolation effect.
Description
Technical Field
The utility model relates to a low stress MEMS encapsulates technical field, especially relates to a three-dimensional adhesive structure and packaging structure to inertial sensor's low stress MEMS encapsulation to and be used for realizing the integrated manufacturing method of the adhesive structure of low stress MEMS encapsulation.
Background
MEMS inertial sensing devices are sensitive to stresses generated in the silicon chip during the packaging process, which is related to chip warpage when stresses are present. In the chip-on-chip packaging process, there are two general ways of soldering and organic adhesive bonding. The low-temperature and low-stress packaging is a common requirement of the MEMS inertial sensing device, and the method with the lowest process temperature is an organic glue bonding method. Common adhesives are epoxy glue, silica gel and the like. The traditional mode of adhering the adhesive sheet is whole-layer adhesion or local adhesive dispensing adhesion, when the environmental temperature changes, because the thermal mismatch of materials often causes the generation of residual stress, the residual stress is reflected to an output signal in the form of an electric signal through a sensitive unit of the MEMS device along with the change of the environmental temperature, and therefore the output of the sensor deviates. The traditional adhesive sheet method has certain limitations, namely, good stress isolation effect and good chip-base bonding force can not be obtained simultaneously.
Disclosure of Invention
In order to solve the deficiencies existing in the prior art, the utility model provides a bonding structure and packaging structure for low stress MEMS encapsulation has better stress isolation effect and better chip-base adhesion.
According to the utility model provides a technical scheme, as the utility model discloses a first aspect provides a bonding structure for low stress MEMS encapsulation, a bonding structure for low stress MEMS encapsulation includes: the stress isolation layer A and the stress isolation layer B are alternately stacked from bottom to top in sequence; the stress isolation layer A and the stress isolation layer B respectively comprise at least one stress isolation layer; the stress isolation layer comprises a plurality of stress isolation strips which are arranged in an array manner.
Further, the stress isolation layer A comprises a first stress isolation layer, and the stress isolation layer B comprises a second stress isolation layer;
the stress isolation strips in the first stress isolation layer and the second stress isolation layer are respectively arranged in a row in parallel, and the stress isolation strips in the first stress isolation layer and the stress isolation strips in the second stress isolation layer are mutually crossed.
Further, the stress isolation a layer comprises a first stress isolation layer, and the stress isolation B layer (200) comprises a second stress isolation layer;
the stress isolation strips in the first stress isolation layer and the second stress isolation layer are respectively arranged in a row in parallel, and the stress isolation strips in the first stress isolation layer are perpendicular to the stress isolation strips in the second stress isolation layer.
Further, the stress isolation layer A comprises a first stress isolation layer and a second stress isolation layer, wherein the stress isolation strips are uniformly arranged, and the stress isolation layer B comprises a third stress isolation layer and a fourth stress isolation layer, wherein the stress isolation layer A comprises a stress isolation strip and a stress isolation strip;
stress isolation strips in the first stress isolation layer and the second stress isolation layer are arranged consistently; stress isolation strips in the third stress isolation layer and the fourth stress isolation layer are arranged consistently
And the stress isolation strips in the first stress isolation layer and the second stress isolation layer are crossed with the stress isolation strips in the third stress isolation layer and the fourth stress isolation layer.
Furthermore, the width of the stress isolation strips is 50-100 mu m, and the distance between the stress isolation strips is 100-500 mu m.
Further, the stress isolation strip is made of the following materials: any one or more of ceramics, thermosetting rubber, thermoplastic rubber, thermosetting resin, and thermoplastic resin.
Further, the thermal expansion coefficient of the stress isolation strip is 1 × 10-6~~1×10-3[1/K]。
As the utility model discloses a second aspect provides a be used for low stress MEMS packaging structure, be used for low stress MEMS packaging structure to include MEMS chip and MEMS base, the MEMS chip is through as the utility model discloses the first aspect bonding structure who is used for low stress MEMS to encapsulate paste on the MEMS base.
As a third aspect of the present invention, there is provided an integrated manufacturing method for realizing a bonding structure of a low stress MEMS package, the bonding structure being manufactured by an additive manufacturing method, including the steps of:
s1: placing the MEMS base on a printing platform;
s2: manufacturing a bonding structure for low-stress MEMS packaging by a direct-writing 3D printing additive manufacturing technology;
s3: bonding the MEMS chip on the bonding structure to obtain a whole device;
s4: and heating the bonded whole device to solidify the bonding glue.
Further, the S2: manufacturing a bonded structure by additive manufacturing techniques of direct writing 3D printing, comprising:
s210: manufacturing an adhesive structure on an adhesive area of the MEMS base through an extrusion system by adopting a direct-writing 3D printing additive manufacturing mode;
wherein the material of the bonding structure is silica gel; the isolating strips in the bonding structure have at least four layers.
Further, the S2: manufacturing a bonded structure by additive manufacturing techniques of direct writing 3D printing, comprising:
s210: manufacturing a bonding structure on a silicon wafer by an extrusion system in a direct-writing 3D printing additive manufacturing mode, and then curing the bonding structure at high temperature;
s220: coating adhesive with adhesiveness on an adhesive area of the MEMS base;
s230: sticking the bonding structure formed after high-temperature curing to the bonding area of the MEMS base to form a composite structure;
s240: coating the upper surface of the bonding structure with adhesive glue;
wherein the material of the bonding structure is light-cured ceramic slurry; the isolating strips in the bonding structure have at least four layers.
From the foregoing, the utility model provides an adhesive structure for low stress MEMS encapsulation possesses following advantage compared with the prior art: the MEMS tube shell and the chip are bonded together by using a three-dimensional bonding structure in the packaging process, the three-dimensional structure is manufactured in an additive manufacturing mode (including but not limited to direct writing 3D printing), the flexibility and controllability are achieved, good chip-base bonding force and good stress isolation effect can be provided at the same time, and the MEMS inertial sensing device produced by the manufacturing method has the advantages of small zero-position temperature drift and firm bonding.
Drawings
Fig. 1 is a schematic longitudinal sectional view of a first embodiment of the first aspect of the present invention.
Fig. 2 is a schematic longitudinal sectional view of a second embodiment of the first aspect of the present invention.
Fig. 3 is a schematic longitudinal sectional view of a third embodiment of the first aspect of the present invention.
Fig. 4 (a) is a schematic perspective view of a first embodiment of the first aspect of the present invention.
Fig. 4 (b) is a schematic perspective view of a second embodiment of the first aspect of the present invention.
Fig. 4 (c) is a schematic perspective view of a third embodiment of the first aspect of the present invention.
Fig. 5 is a schematic structural diagram of a second aspect of the present invention.
Fig. 6 is a schematic diagram illustrating the surface stress distribution under the MEMS chip in the second aspect of the present invention, wherein fig. 6 (a) is a surface stress distribution diagram under the MEMS chip in the prior art, fig. 6 (b) is for adopting the first embodiment of the present invention, the surface stress distribution diagram under the MEMS chip is under the bonding structure, fig. 6 (c) is for adopting the second embodiment of the present invention, the surface stress distribution diagram under the MEMS chip is under the bonding structure, fig. 6 (d) is for adopting the third embodiment of the present invention.
The darker stress that represents of colour is bigger, can see that MEMS chip under the current structure surface stress change is inhomogeneous, and uses the utility model discloses a surface stress change is even and stress is littleer under the MEMS chip of the three kinds of embodiments of first aspect, shows that silica gel foam structure has better stress isolation effect.
Fig. 7 is a stress distribution curve on the diagonal line of the upper surface of the MEMS chip when the bonding structure according to the first aspect of the present invention is adopted; stress distribution curve undulation is great and stress variation is great on the MEMS chip upper surface diagonal under the existing structure, uses the utility model discloses a stress distribution curve undulation is less on the MEMS chip upper surface diagonal of the three kinds of embodiments of the first aspect to it is little to explain stress variation.
Fig. 8 is a schematic flow chart of a second embodiment of the third aspect of the present invention.
100. Stress isolation layer A, 200 stress isolation layer B, 300 stress isolation bar, 410 first stress isolation layer, 420 second stress isolation layer, 430 third stress isolation layer, 440 fourth stress isolation layer, 500 fourth stress isolation layer, 600 MEMS base.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in detail with reference to the accompanying drawings. In which like parts are designated by like reference numerals. It should be noted that the words "front", "rear", "left", "right", "upper" and "lower" used in the following description refer to directions in the drawings. The terms "inner" and "outer" are used to refer to directions toward and away from, respectively, the geometric center of a particular component.
As a first aspect of the present invention, there is provided a bonding structure for low stress MEMS package, the bonding structure for low stress MEMS package including the following three embodiments:
the first embodiment:
the utility model provides a bonding structure for low stress MEMS encapsulation, a bonding structure for low stress MEMS encapsulation includes: the stress isolation layer comprises a plurality of stress isolation layers which are sequentially stacked, each stress isolation layer comprises a plurality of stress isolation strips 300, and the stress isolation strips 300 are arranged at intervals in an array to form the stress isolation layer of the layer.
Preferably, the bonding structure comprises a stress isolation layer a 100 and a stress isolation layer B200 which are alternately stacked from bottom to top in sequence, wherein the stress isolation layer a 100 comprises a first stress isolation layer 410, and the stress isolation layer B200 comprises a second stress isolation layer 420; the first stress isolation layer 410 and the second stress isolation layer 420 respectively include a plurality of stress isolation bars 300 arranged in a row at intervals in sequence, and the stress isolation bars 300 in the first stress isolation layer 410 are perpendicular to the stress isolation bars 300 in the second stress isolation layer 420.
The second embodiment:
the utility model provides a bonding structure for low stress MEMS encapsulation, a bonding structure for low stress MEMS encapsulation includes: the stress isolation layer comprises a plurality of stress isolation strips 300, and the stress isolation strips 300 are arranged side by side at intervals to form the stress isolation layer.
Preferably, the bonding structure includes a stress isolation a layer 100 and a stress isolation B layer 200 alternately stacked from bottom to top in sequence, the stress isolation a layer 100 includes a first stress isolation layer 410 and a second stress isolation layer 420 where stress isolation bars 300 are arranged in a consistent manner, the stress isolation B layer 200 includes a third stress isolation layer 430 and a fourth stress isolation layer 440 where stress isolation bars 300 are arranged in a consistent manner, and the stress isolation bars 300 in the first stress isolation layer 410 and the second stress isolation layer 420 cross the stress isolation bars 300 in the third stress isolation layer 430 and the fourth stress isolation layer 440, preferably, the stress isolation bars 300 in the first stress isolation layer 410 and the second stress isolation layer 420 are perpendicular to the stress isolation bars 300 in the third stress isolation layer 430 and the fourth stress isolation layer 440.
Third embodiment:
the utility model provides a bonding structure for low stress MEMS encapsulation, a bonding structure for low stress MEMS encapsulation includes: the stress isolation layer comprises a plurality of stress isolation layers which are sequentially stacked, each stress isolation layer comprises a plurality of stress isolation strips 300, and the stress isolation strips 300 are arranged at intervals in an array to form the stress isolation layer of the layer.
Preferably, the bonding structure comprises a stress isolation layer a 100 and a stress isolation layer B200 which are alternately stacked from bottom to top in sequence, wherein the stress isolation layer a 100 comprises a first stress isolation layer 410, and the stress isolation layer B200 comprises a second stress isolation layer 420; the first stress isolation layer 410 and the second stress isolation layer 420 respectively comprise a plurality of stress isolation bars 300 which are sequentially arranged in a row at intervals, and the stress isolation bars 300 in the first stress isolation layer 410 and the stress isolation bars 300 in the second stress isolation layer 420 are crossed with each other to form a crossed angle.
As a second aspect of the present invention, a package structure for low stress MEMS is provided. The structure for low stress MEMS package comprises a MEMS chip 500 and a MEMS base 600, the MEMS chip 500 is adhered to the MEMS base 600 by the adhesive structure for low stress MEMS package according to any one of the embodiments of the present invention.
It can be understood that the bonding structure has a certain stress isolation effect, namely, the influence of thermal expansion and cold contraction of the tube shell and the glue on the chip is small when the temperature changes, so that the zero temperature drift of the MEMS can be reduced.
The third aspect of the present invention provides a method for manufacturing a low stress MEMS package structure, as shown in fig. 8, comprising the following steps:
s1: placing the MEMS base 600 on a printing platform;
s2: manufacturing a bonding structure by a material increase manufacturing technology of direct writing 3D printing;
s3: bonding the MEMS chip 500 on the bonding structure to obtain a whole device;
s4: and heating the bonded whole device to solidify the bonding glue.
It should be noted that, for S2, in addition to the additive manufacturing technique of direct writing 3D printing, other additive manufacturing techniques may be adopted to manufacture the bonding structure according to the first aspect of the present invention.
To the first embodiment of the third aspect of the present invention:
the first step is as follows: installing an extrusion system of a 3D printer at the execution tail end of a multi-degree-of-freedom motion platform;
the second step is that: loading the extrusion system with a material for the preparation of the bonded structure; preferably, the material is a cured ceramic slurry;
the third step: the motion control technology and the extrusion system are used for controlling and cooperating, four or more layers of stress isolating strips 300 array structures can be extruded in the motion process, and self-supporting is completed by using the characteristic of high storage modulus of the material; preferably, the ceramic three-dimensional bonded structure is printed on a printer with a needle head at a printing speed of 7mm/s, setting the extrusion pressure of the extrusion system to 60 psi. The size of the bonding structure is 3.2mm multiplied by 5mm, 6 layers are formed, the line width is about 100 mu m, and the line spacing is 200 mu m;
the fourth step: print out like through the 3D printer the utility model discloses an arbitrary one kind embodiment of first aspect place the high temperature environment after the bonding structure under with it solidification completely. Preferably, the ceramic three-dimensional bonding structure obtained in the second step is placed in a muffle furnace, degreasing is carried out at 600 ℃, and then the degreased ceramic structure is placed in a high-temperature muffle furnace and sintered for 2 hours at 1500 ℃;
the fifth step: coating the adhesive on the adhesive region of the MEMS base 600; preferably, the adhesive glue is Dow Corning SE1700 silica gel;
and a sixth step: adhering the bonding structure formed after the fourth step of high-temperature curing to the bonding area of the MEMS base 600 to form a composite structure;
the seventh step: coating the adhesive with adhesiveness on the upper surface of the adhesive structure formed after the fourth step of high-temperature curing;
eighth step: attaching the MEMS chip 500 to the upper surface of the bonding structure;
the ninth step: and (4) putting the complete structure obtained in the eighth step into an oven to be heated so as to cure the adhesive glue in the fifth step and the seventh step.
It should be explained that the width of the stress isolation strip 300 in the bonding structure is within a range of about 100 μm, and the number of layers of the stress isolation layer in the bonding structure is 4 or more.
To the third aspect of the present invention, in a second embodiment:
the first step is as follows: installing an extrusion system of a 3D printer at the execution tail end of a multi-degree-of-freedom motion platform;
the second step is that: loading the extrusion system with a material for the preparation of the bonded structure; preferably, the material prepared by the bonding structure adopts Dow Corning SE1700 silica gel, and the inner diameter of the needle head of the extrusion system is 100 μm;
the third step: the MEMS base 600 is placed on a printing platform of a printer, the motion control technology and the extrusion system control are utilized to work cooperatively, four or more layers of stress isolation strips 300 array structures can be extruded on the MEMS base 600 in the motion process, and self-supporting is completed by utilizing the characteristic of high storage modulus of the material; preferably, the air pressure of the extrusion system is set to be 90psi, and the moving speed of the needle head is set to be 1 mm/s; wherein the air pressure of the extrusion system extrudes the silica gel in the syringe from the needle through a 7-fold pressure device and directly forms on the MEMS base 600.
The fourth step: attaching the MEMS chip 500 to the upper surface of the bonding structure;
the fifth step: curing the structure obtained in the fourth step at a high temperature; preferably, the three-dimensional bonding structure of the silica gel is cured and molded by heating and curing at 80 ℃.
It can be understood that: the MEMS inertial sensing device has the advantages that the MEMS inertial sensing device produced by the manufacturing method has small zero temperature drift.
Those of ordinary skill in the art will understand that: the above description is only for the specific embodiments of the present invention, and is not intended to limit the present invention, and any modifications, equivalent replacements, improvements, etc. made within the spirit of the present invention should be included in the protection scope of the present invention.
Claims (7)
1. A bonding structure for a low stress MEMS package, the bonding structure comprising: the stress isolation layer A (100) and the stress isolation layer B (200) are alternately stacked from bottom to top in sequence; the stress isolation layer A (100) and the stress isolation layer B (200) respectively comprise at least one stress isolation layer; the stress isolation layer comprises a plurality of stress isolation strips (300) which are arranged in an array manner.
2. The bonding structure for low stress MEMS package according to claim 1, wherein the stress isolation a layer (100) comprises a first stress isolation layer (410), and the stress isolation B layer (200) comprises a second stress isolation layer (420);
the stress isolation strips (300) in the first stress isolation layer (410) and the second stress isolation layer (420) are respectively arranged in parallel in a row, and the stress isolation strips (300) in the first stress isolation layer (410) and the stress isolation strips (300) in the second stress isolation layer (420) are mutually crossed.
3. The bonding structure for low stress MEMS package according to claim 1, wherein the stress isolation a layer (100) comprises a first stress isolation layer (410) and a second stress isolation layer (420) with the stress isolation bars (300) arranged in a uniform manner, and the stress isolation B layer (200) comprises a third stress isolation layer (430) and a fourth stress isolation layer (440) with the stress isolation bars (300) arranged in a uniform manner;
stress isolation strips (300) in the first stress isolation layer (410) and the second stress isolation layer (420) are arranged in a consistent manner; stress isolation bars (300) in the third stress isolation layer (430) and the fourth stress isolation layer (440) are uniformly arranged
And the stress isolation bars (300) in the first stress isolation layer (410) and the second stress isolation layer (420) cross the stress isolation bars (300) in the third stress isolation layer (430) and the fourth stress isolation layer (440).
4. The bonding structure for low stress MEMS packaging according to claim 1, wherein the width of the stress isolation bars (300) is 50 to 150 μm, and the distance between the stress isolation bars (300) is 100 to 500 μm.
5. The bonding structure for low stress MEMS package according to claim 1, wherein the stress isolation bar (300) is made of the material: any one or more of ceramics, thermosetting rubber, thermoplastic rubber, thermosetting resin, and thermoplastic resin.
6. The bonding structure for low stress MEMS package according to claim 1, wherein the stress isolation bar (300) has a thermal expansion coefficient of 1 × 10-6~~1×10-3[1/K]。
7. A low stress MEMS packaging structure, characterized in that, the low stress MEMS packaging structure comprises a MEMS chip (500) and a MEMS base (600), the MEMS chip (500) is pasted on the MEMS base (600) through the pasting structure for low stress MEMS packaging according to any claim 1-4.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201922009546.4U CN211255241U (en) | 2019-11-20 | 2019-11-20 | Bonding structure for low-stress MEMS packaging and packaging structure |
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| CN201922009546.4U CN211255241U (en) | 2019-11-20 | 2019-11-20 | Bonding structure for low-stress MEMS packaging and packaging structure |
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