CN211239821U - Drive protection circuit - Google Patents
Drive protection circuit Download PDFInfo
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- CN211239821U CN211239821U CN201921536733.1U CN201921536733U CN211239821U CN 211239821 U CN211239821 U CN 211239821U CN 201921536733 U CN201921536733 U CN 201921536733U CN 211239821 U CN211239821 U CN 211239821U
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Abstract
The utility model discloses a drive protection circuit. The drive protection circuit comprises a drive module, a state detection module and a control module, wherein one end of the drive module is connected with the grid electrode of the insulated gate device, the other end of the drive module is connected with the control module, one end of the state detection module is connected with the grid electrode of the insulated gate device, and the other end of the state detection module is connected with the control module. The state detection module is used for obtaining the grid voltage of the insulated gate device and outputting a state detection signal to the control module according to the grid voltage, and the control module is used for judging whether the insulated gate device is short-circuited or not according to the state detection signal and controlling the driving module to output a high-resistance state to the grid of the insulated gate device when the insulated gate device is short-circuited. Therefore, the driving circuit is effectively prevented from being burnt by current after the insulated gate device is short-circuited, and loss is reduced.
Description
Technical Field
The utility model relates to a semiconductor device drives technical field with insulated gate structure, especially relates to a drive protection circuit.
Background
An Insulated Gate device, such as an Insulated Gate Bipolar Transistor (IGBT), has become a mainstream power semiconductor device, and the Insulated Gate device has been widely applied to the thermal industry, such as photovoltaic, wind power generation, frequency conversion, and electric vehicles. In practical applications, a short-circuit protection circuit is designed for an insulated gate device to prevent the insulated gate device from breakdown failure due to overcurrent.
However, when the insulated gate device fails during operation, the gate and the drain of the insulated gate device may be shorted, which may cause the output of the driver to be shorted, and thus may burn the driving circuit and other electronic components of the insulated gate device, resulting in greater loss.
SUMMERY OF THE UTILITY MODEL
Therefore, it is desirable to provide a driving protection circuit, which can cut off a gate short circuit when a gate of an insulated gate device is shorted, so as to avoid the short circuit current from burning out the driving circuit and reduce the loss.
The utility model discloses a reach the technical scheme that above-mentioned purpose proposed as follows:
a drive protection circuit is used for receiving a drive signal and controlling the drive signal to drive an insulated gate device to work, and comprises a drive module, a state detection module and a control module, wherein one end of the drive module is electrically connected with a grid electrode of the insulated gate device, the other end of the drive module is electrically connected with the control module, one end of the state detection module is electrically connected with the grid electrode of the insulated gate device, and the other end of the state detection module is electrically connected with the control module;
the state detection module is used for acquiring the grid voltage of the insulated gate device and outputting a state detection signal to the control module according to the grid voltage of the insulated gate device; the control module is used for judging whether the insulated gate device is short-circuited according to the state detection signal and processing the driving signal according to a judgment result, and the driving module outputs different resistance states to the grid electrode of the insulated gate device under the control of the driving signal processed by the control module;
when the insulated gate device is not short-circuited, the driving module outputs a low-resistance state to the grid electrode of the insulated gate device; and
when the insulated gate device is short-circuited, the driving module outputs a high-resistance state to the grid electrode of the insulated gate device.
Further, the state detection module includes a comparator COMP1, a comparator COMP2, a voltage source V1, and a voltage source V2, a first input end of the comparator COMP1 and a first input end of the comparator COMP2 are both electrically connected to the gate of the insulated gate device to obtain a gate voltage of the insulated gate device, a second input end of the comparator COMP1 is electrically connected to the voltage source V1 to obtain a first comparison reference, a second input end of the comparator COMP2 is electrically connected to the voltage source V2 to obtain a second comparison reference, and an output end of the comparator COMP1 and an output end of the comparator COMP2 are both electrically connected to the control module to output the state detection signal to the control module.
Further, the control module includes an and gate, an or gate, an xor gate and a filtering unit, a first input end of the and gate is electrically connected to a first input end of the or gate and is configured to receive the driving signal, a second input end of the and gate is electrically connected to the filtering unit, a second input end of the or gate is connected to the filtering unit after inverting, output ends of the and gate and the or gate are both electrically connected to the driving module, an output end of the xor gate is electrically connected to the filtering unit after inverting, and an input end of the xor gate is electrically connected to an output end of the comparator COMP1 and an output end of the comparator COMP 2.
Further, the driving module includes a not gate U1, a not gate U2, an electronic switch Q1, an electronic switch Q2, a resistor R1 and a resistor R2, an input terminal of the not gate U1 is electrically connected to an output terminal of the and gate, an input terminal of the not gate U2 is electrically connected to an output terminal of the or gate, an output terminal of the not gate U1 is electrically connected to a first terminal of the electronic switch Q1, a second terminal of the electronic switch Q1 is electrically connected to a power source VCC, a third terminal of the electronic switch Q1 is electrically connected to the gate of the insulated gate device through the resistor R1, an output terminal of the not gate U2 is electrically connected to a first terminal of the electronic switch Q2, a second terminal of the electronic switch Q2 is electrically connected to a power source VSS, and a third terminal of the electronic switch Q2 is electrically connected to the gate of the insulated gate device through the resistor R2.
Further, a first input terminal of the comparator COMP1 is an inverting input terminal, a second input terminal of the comparator COMP1 is a non-inverting input terminal, a first input terminal of the comparator COMP2 is an inverting input terminal, and a second input terminal of the comparator COMP2 is a non-inverting input terminal.
Further, the first comparison reference is smaller than the minimum turn-on voltage of the gate when the insulated gate device normally works, and the second comparison reference is larger than the maximum turn-off voltage of the gate when the insulated gate device normally works.
Further, the control module is a programmable logic device or a field programmable gate array.
The drive protection circuit acquires the grid voltage of the insulated gate device through a state detection module and outputs a state detection signal according to the grid voltage; and judging whether the insulated gate device is short-circuited or not according to the state detection signal through a control module, and processing a driving signal when the insulated gate device is short-circuited so as to control the output of the driving module to be changed into a high-resistance state, thereby cutting off a grid short-circuit loop of the insulated gate device. Therefore, the driving module can be effectively prevented from being burnt by short-circuit current, and the loss is reduced.
Drawings
Fig. 1 is a block diagram of a preferred embodiment of the driving protection circuit of the present invention.
Fig. 2 is a circuit diagram of a preferred embodiment of the driving protection circuit of the present invention.
Description of the main elements
AND gate AND
OR gate OR
XOR gate
Filter unit FILTER
NOT gate U1, U2
Electronic switches Q1, Q2
Resistors R1 and R2
Comparators COMP1, COMP2
Voltage sources V1, V2
Power source VCC, VSS
The following detailed description of the invention will be further described in conjunction with the above-identified drawings.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more clearly understood, the present invention will be described in further detail with reference to the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Referring to fig. 1, the present invention provides a driving protection circuit 100. The driving protection circuit 100 includes a control module 10, a driving module 20, and a status detection module 30.
One end of the control module 10 is configured to be electrically connected to a signal generating device (not shown) to obtain a driving signal output by the signal generating device, where in this embodiment, the driving signal is a Pulse Width Modulation (PWM) signal.
One end of the driving module 20 is electrically connected to the control module 10, and the other end of the driving module 20 is electrically connected to the gate of the insulated gate device. One end of the state detection module 30 is electrically connected to the control module 10, and the other end of the state detection module 30 is electrically connected to the gate of the insulated gate device.
The state detection module 30 is configured to obtain a gate voltage of the insulated gate device, and output a state detection signal to the control module 10 according to the gate voltage of the insulated gate device. The control module 10 determines whether the insulated gate device is short-circuited according to the state detection signal, and processes the driving signal according to a determination result. The driving module 20 outputs different resistance states to the gate of the insulated gate device under the control of the driving signal processed by the control module 10.
When the determination result indicates that the insulated gate device is not short-circuited, the driving module 20 outputs a low resistance state to the gate of the insulated gate device under the control of the driving signal processed by the control module 10, so that the insulated gate device continuously and normally operates.
When the determination result is that the insulated gate device is short-circuited, the driving module 20 outputs a high-resistance state to the gate of the insulated gate device under the control of the driving signal processed by the control module 10, so as to cut off a gate short-circuit loop of the insulated gate device. Therefore, the driving module 20 can be effectively prevented from being burnt by short-circuit current, and the loss is reduced.
Referring to fig. 2, fig. 2 is a circuit diagram of a preferred embodiment of the present invention. The control module 10 includes an AND gate AND, an OR gate OR, an XOR gate XOR, AND a FILTER unit FILTER. A first input terminal of the AND gate AND is electrically connected to a first input terminal of the OR gate OR AND configured to receive a driving signal from the signal generating device (not shown), a second input terminal of the AND gate AND is electrically connected to an output terminal of the FILTER unit FILTER, AND a second input terminal of the OR gate OR is connected to an output terminal of the FILTER unit FILTER after being inverted. The output terminal of the AND gate AND the output terminal of the OR gate OR are electrically connected to the driving module 20. The input terminal of the exclusive or gate XOR is electrically connected to the status detection module 30. The output end of the exclusive or gate XOR is electrically connected to the input end of the FILTER unit FILTER after inversion.
The driving module 20 comprises two NOT gates U1-U2, two electronic switches Q1-Q2 and two resistors R1-R2. The input end of the NOT gate U1 is electrically connected to the output end of the AND gate AND. The input end of the not gate U2 is electrically connected to the output end of the OR gate OR. The output end of the not gate U1 is electrically connected to the first end of the electronic switch Q1, the second end of the electronic switch Q1 is electrically connected to the power source VCC, and the third end of the electronic switch Q1 is electrically connected to the gate of the insulated gate device through the resistor R1. The output end of the not gate U2 is electrically connected to the first end of the electronic switch Q2, the second end of the electronic switch Q2 is electrically connected to the power supply VSS, and the third end of the electronic switch Q2 is electrically connected to the gate of the insulated gate device through the resistor R2.
In this embodiment, the electronic switch Q1 is a P-channel enhancement mode fet, and the first terminal, the second terminal, and the third terminal of the electronic switch Q1 correspond to the gate, the source, and the drain of the P-channel enhancement mode fet, respectively. The electronic switch Q2 is an N-channel enhancement type field effect transistor, and the first end, the second end and the third end of the electronic switch Q2 correspond to the grid electrode, the source electrode and the drain electrode of the N-channel enhancement type field effect transistor respectively.
The state detection module 30 includes two comparators COMP1-COMP2 and two voltage sources V1-V2. A first input end of the comparator COMP1 and a first input end of the comparator COMP2 are both electrically connected to the gate of the insulated gate device to obtain a gate voltage of the insulated gate device. A second input terminal of the comparator COMP1 is electrically connected to the voltage source V1 to obtain a first comparison reference. A second input terminal of the comparator COMP2 is electrically connected to the voltage source V2 to obtain a second comparison reference. An output terminal of the comparator COMP1 is electrically connected to a first input terminal of the exclusive or gate XOR, and an output terminal of the comparator COMP2 is electrically connected to a second input terminal of the exclusive or gate XOR.
In this embodiment, the first comparison reference is smaller than the minimum turn-on voltage of the gate when the insulated gate device normally works, and the second comparison reference is larger than the maximum turn-off voltage of the gate when the insulated gate device normally works.
When the circuit works, the first input end of the comparator COMP1 and the first input end of the comparator COMP2 acquire the gate voltage of the insulated gate device in real time so as to compare the gate voltage with the first comparison reference and the second comparison reference.
When the insulated gate device is in an off state, the comparator COMP1 AND the comparator COMP2 both output a high level signal, the XOR gate XOR outputs a high level signal in an inverted manner, at this time, the driving signal is at a low level, the high level signal AND the low level driving signal are input to the AND gate AND the OR gate OR together, AND a low level signal is output to the driving module 20, at this time, the electronic switch Q1 is turned off, AND the electronic switch Q2 is turned on, so that the driving module 20 outputs a low resistance state to maintain the normal operation of the insulated gate device.
When the insulated gate device is in an on state, the comparator COMP1 AND the comparator COMP2 both output a low level signal, the XOR gate XOR outputs a high level signal in an inverted manner, at this time, the driving signal is at a high level, the high level signal AND the high level driving signal are input to the AND gate AND the OR gate OR together, AND a high level signal is output to the driving module 20, at this time, the electronic switch Q1 is turned on, AND the electronic switch Q2 is turned off, so that the driving module 20 outputs a low resistance state to maintain the normal operation of the insulated gate device.
When the insulated gate device is in a short-circuit state, the comparator COMP1 outputs a high level, the comparator COMP2 outputs a low level signal, the XOR gate XOR outputs a low level signal in an inverted phase, the low level signal AND the driving signal are input to the AND gate AND the OR gate OR together, AND the low level signal AND the high level signal are output to the driving module 20 through the AND gate AND the OR gate OR respectively, at this time, the electronic switch Q1 is turned off, the electronic switch Q2 is turned off, AND thus, the driving module 20 outputs a high impedance state to cut off a gate short-circuit loop of the insulated gate device.
In the present embodiment, when the insulated gate device is in the process of switching on and off, the state detection signal output by the state detection module 30 is the same as the state detection signal when the insulated gate device is in the short-circuit state. The FILTER unit FILTER is configured to FILTER a low level output after XOR inversion by the XOR gate when the insulated gate device is in on and off switching, so as to avoid erroneously determining a gate state of the insulated gate device at this time as a short circuit state.
In this embodiment, a first input terminal of the comparator COMP1 is an inverting input terminal, and a second input terminal of the comparator COMP1 is a non-inverting input terminal. A first input terminal of the comparator COMP2 is an inverting input terminal, and a second input terminal of the comparator COMP2 is a non-inverting input terminal. In other embodiments, the first input terminal of the comparator COMP1 may also be a non-inverting input terminal, the second input terminal of the comparator COMP1 is an inverting input terminal, the first input terminal of the comparator COMP2 is a non-inverting input terminal, and the second input terminal of the comparator COMP2 is an inverting input terminal.
In a preferred embodiment, the control module 10 can be a Complex Programmable Logic Device (CPLD) or a Field Programmable Gate Array (FPGA).
The driving protection circuit 100 obtains the gate voltage of the insulated gate device through the state detection module 30, and outputs a state detection signal according to the gate voltage; and the control module 10 is further used for judging whether the insulated gate device is short-circuited according to the state detection signal, and processing the driving signal when the insulated gate device is short-circuited, so that the driving module 20 outputs a high-resistance state to the gate of the insulated gate device under the control of the processed driving signal, and the gate short-circuit loop of the insulated gate device is cut off. Therefore, the driving module 20 can be effectively prevented from being burnt by short-circuit current, and the loss is reduced.
The above description is only exemplary of the present invention and should not be taken as limiting the scope of the present invention, as any modifications, equivalents, improvements and the like made within the spirit and principles of the present invention are intended to be included within the scope of the present invention.
Claims (7)
1. A drive protection circuit is used for receiving a drive signal and controlling the drive signal to drive an insulated gate device to work, and is characterized by comprising a drive module, a state detection module and a control module, wherein one end of the drive module is electrically connected with a grid electrode of the insulated gate device, the other end of the drive module is electrically connected with the control module, one end of the state detection module is electrically connected with the grid electrode of the insulated gate device, and the other end of the state detection module is electrically connected with the control module;
the state detection module is used for acquiring the grid voltage of the insulated gate device and outputting a state detection signal to the control module according to the grid voltage of the insulated gate device; the control module is used for judging whether the insulated gate device is short-circuited according to the state detection signal and processing the driving signal according to a judgment result, and the driving module outputs different resistance states to the grid electrode of the insulated gate device under the control of the driving signal processed by the control module;
when the insulated gate device is not short-circuited, the driving module outputs a low-resistance state to the grid electrode of the insulated gate device; and
when the insulated gate device is short-circuited, the driving module outputs a high-resistance state to the grid electrode of the insulated gate device.
2. The driving protection circuit according to claim 1, wherein the state detection module comprises a comparator COMP1, a comparator COMP2, a voltage source V1 and a voltage source V2, a first input end of the comparator COMP1 and a first input end of the comparator COMP2 are electrically connected to a gate of the insulated gate device to obtain a gate voltage of the insulated gate device, a second input end of the comparator COMP1 is electrically connected to the voltage source V1 to obtain a first comparison reference, a second input end of the comparator COMP2 is electrically connected to the voltage source V2 to obtain a second comparison reference, and an output end of the comparator COMP1 and an output end of the comparator COMP2 are electrically connected to the control module to output the state detection signal to the control module.
3. The driving protection circuit of claim 2, wherein the control module comprises an and gate, an or gate, an xor gate and a filter unit, a first input end of the and gate is electrically connected to a first input end of the or gate and is configured to receive the driving signal, a second input end of the and gate is electrically connected to the filter unit, a second input end of the or gate is connected to the filter unit after being inverted, output ends of the and gate and the or gate are electrically connected to the driving module, an output end of the xor gate is electrically connected to the filter unit after being inverted, and an input end of the xor gate is electrically connected to an output end of the comparator COMP1 and an output end of the comparator COMP 2.
4. The driving protection circuit as claimed in claim 3, wherein the driving module comprises a NOT gate U1, a NOT gate U2, an electronic switch Q1, an electronic switch Q2, a resistor R1 and a resistor R2, the input end of the NOT gate U1 is electrically connected with the output end of the AND gate, the input end of the NOT gate U2 is electrically connected with the output end of the OR gate, the output end of the not gate U1 is electrically connected with the first end of the electronic switch Q1, the second end of the electronic switch Q1 is electrically connected with the power supply VCC, the third terminal of the electronic switch Q1 is electrically connected to the gate of the insulated-gate device through the resistor R1, the output end of the not gate U2 is electrically connected with the first end of the electronic switch Q2, the second end of the electronic switch Q2 is electrically connected with a power supply VSS, the third terminal of the electronic switch Q2 is electrically connected to the gate of the insulated gate device through the resistor R2.
5. The drive protection circuit according to claim 2, wherein a first input terminal of the comparator COMP1 is an inverting input terminal, a second input terminal of the comparator COMP1 is a non-inverting input terminal, a first input terminal of the comparator COMP2 is an inverting input terminal, and a second input terminal of the comparator COMP2 is a non-inverting input terminal.
6. The driving protection circuit according to claim 2, wherein the first comparison reference is smaller than a minimum on-voltage of the gate when the insulated gate device normally operates, and the second comparison reference is larger than a maximum off-voltage of the gate when the insulated gate device normally operates.
7. The drive protection circuit of claim 1, wherein the control module is a programmable logic device or a field programmable gate array.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921536733.1U CN211239821U (en) | 2019-09-16 | 2019-09-16 | Drive protection circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921536733.1U CN211239821U (en) | 2019-09-16 | 2019-09-16 | Drive protection circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN211239821U true CN211239821U (en) | 2020-08-11 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201921536733.1U Active CN211239821U (en) | 2019-09-16 | 2019-09-16 | Drive protection circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN211239821U (en) |
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2019
- 2019-09-16 CN CN201921536733.1U patent/CN211239821U/en active Active
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