CN211238577U

CN211238577U - DDR4 type DRAM connector

Info

Publication number: CN211238577U
Application number: CN201922344636.9U
Authority: CN
Inventors: 隆权; 岑燎炬
Original assignee: FCI Connectors Dongguan Co Ltd
Current assignee: FCI Connectors Dongguan Co Ltd
Priority date: 2019-12-24
Filing date: 2019-12-24
Publication date: 2020-08-11
Anticipated expiration: 2029-12-24

Abstract

The utility model provides a pair of DDR4 type memory strip connector, which comprises a socket, be equipped with the slot on the socket, the slot both ends are equipped with a plurality of first terminal grooves, second terminal groove respectively, first terminal inslot is fixed with first terminal, second terminal inslot is fixed with the second terminal, first kink, second transmission portion, the cooperation in second kink left side form first V type groove, third kink, fifth transmission portion, fourth kink left side cooperation form second V type groove, fourth kink, sixth transmission portion, sixth kink right side cooperation form third V type groove. The utility model discloses a connector, simple structure, signal transmission speed is high, and the terminal has excellent holding power, can eliminate the hasp board that is used for fixed terminal position to can improve the SI performance of terminal effectively.

Description

DDR4 type DRAM connector

Technical Field

The utility model relates to a connector technical field, concretely relates to DDR4 type DRAM connector.

Background

DDR, double data rate synchronous dynamic random access memory, strictly speaking DDR should be called DDR SDRAM, and people are used to be called DDR memory. The DDR connector is a connector for connecting a memory bank and a circuit board, and the contact performance of the memory bank and the DDR connector and the welding performance of the DDR connector and the circuit board have great influence on the quality of equipment corresponding to the memory type products. The DDR connector in the prior art is unstable in structure and poor in SI performance.

In order to solve the above problems, a connector, such as "a DDR connector" disclosed in application No. 201910953544.2, has been proposed, which has better SI performance, flatness and manufacturability, and has locking plates connected to the inner sides of the two terminals, so as to reduce the risk of loosening the terminals and ensure the structural stability of the terminals. This structure requires two locking plates on the inner side of the terminal to improve the holding force of the terminal, but the locking plates can cause the problem of low impedance and crosstalk of the terminal, which affects the high-speed operation of the connector.

SUMMERY OF THE UTILITY MODEL

To above problem, the utility model provides a DDR4 type DRAM connector, simple structure, signal transmission speed is high, and the terminal has excellent holding power, can eliminate the hasp board that is used for fixed terminal position to can improve the SI performance of terminal effectively.

In order to achieve the above object, the present invention provides the following technical solutions:

the DDR4 type memory bank connector comprises a socket, wherein a slot is formed in the socket, a plurality of first terminal grooves and second terminal grooves are formed in two ends of the slot respectively, the first terminal grooves and the second terminal grooves are arranged in a staggered mode, first terminals are fixed in the first terminal grooves, second terminals are fixed in the second terminal grooves, the first terminals comprise first welding portions, first transmission portions, first bent portions, second transmission portions, second bent portions, third transmission portions and first contact portions, the first contact portions are arranged close to one sides of the second terminals, first V-shaped grooves are formed in the left sides of the first bent portions, the second transmission portions and the second bent portions in a matched mode, and the second terminals comprise second welding portions, fourth transmission portions, third bent portions, fifth transmission portions, fourth bent portions, sixth transmission portions, sixth bent portions, seventh transmission portions, The second contact part is arranged close to one side of the first terminal, the left sides of the third bent part, the fifth transmission part and the fourth bent part are matched to form a second V-shaped groove, and the right sides of the fourth bent part, the sixth transmission part and the sixth bent part are matched to form a third V-shaped groove.

Specifically, a first hot melt plate is connected to the slot, and the first hot melt plate is formed on the inner side of the first V-shaped groove.

Specifically, a second hot melt plate is connected to the slot, and the second hot melt plate is formed on the inner side of the third V-shaped groove.

Specifically, the two ends of the socket are connected with supports, supporting plates are fixed at the bottoms of the supports, and supporting legs are connected to the bottoms of the supporting plates.

Specifically, the support is provided with a mounting groove for inserting the support plate.

The utility model has the advantages that:

firstly, the connector of the present invention is different from the conventional vertical connector in that the slot is designed to be transversely inserted, so that the memory card is transversely placed after being inserted, thereby reducing the overall height;

secondly, the terminal is designed to be provided with a V-shaped groove structure, the terminal is fixed by embedding the hot melting plate into the V-shaped groove, so that the terminal has excellent holding force in the terminal groove, the structure is simple, the signal transmission speed is high, the traditional locking plate for fixing the position of the terminal can be eliminated, and the SI performance of the terminal can be effectively improved.

Drawings

Fig. 1 is a first perspective view of a DDR4 type bank connector according to the present invention.

Fig. 2 is an enlarged view of a portion a in fig. 1.

Fig. 3 is a second perspective view of the DDR4 type bank connector of the present invention.

Fig. 4 is a front view of a DDR4 type bank connector according to the present invention.

Fig. 5 is a cross-sectional view taken along plane B-B of fig. 4.

Fig. 6 is a cross-sectional view of plane C-C of fig. 4.

Fig. 7 is a schematic structural diagram of the first terminal of the present invention.

Fig. 8 is a schematic structural diagram of a second terminal according to the present invention.

Fig. 9 is a schematic structural view of the connector of the present invention soldered to the circuit board after being plugged with the memory bank.

The reference signs are: the socket comprises a socket 1, a slot 11, a first terminal groove 12, a second terminal groove 13, a first fuse plate 14, a second fuse plate 15, a first terminal 2, a first welding part 21, a first transmission part 22, a first bending part 23, a second transmission part 24, a second bending part 25, a third transmission part 26, a first contact part 27, a first V-shaped groove 201, a second terminal 3, a second welding part 31, a fourth transmission part 32, a third bending part 33, a fifth transmission part 34, a fourth bending part 35, a sixth transmission part 36, a sixth bending part 37, a seventh transmission part 38, a second contact part 39, a second V-shaped groove 301, a third V-shaped groove 302, a support 4, an installation groove 41, a support plate 5, a support leg 6, a memory bar 7 and a circuit board 8.

Detailed Description

The present invention will be described in further detail with reference to the following examples and drawings, but the present invention is not limited thereto.

As shown in fig. 1-9:

a DDR4 type memory bank connector comprises a socket 1, wherein the socket 1 is provided with a slot 11, two ends of the slot 11 are respectively provided with a plurality of first terminal slots 12 and second terminal slots 13, the first terminal slots 12 and the second terminal slots 13 are arranged in a staggered manner, a first terminal 2 is fixed in each first terminal slot 12, a second terminal 3 is fixed in each second terminal slot 13, each first terminal 2 comprises a first welding part 21, a first transmission part 22, a first bending part 23, a second transmission part 24, a second bending part 25, a third transmission part 26 and a first contact part 27, the first contact part 27 is arranged close to one side of each second terminal 3, the left sides of the first bending part 23, the second transmission part 24 and the second bending part 25 are matched to form a first V-shaped slot 201, the slot 11 is connected with a first hot melt plate 14, the first hot melt plate 14 is formed inside the first V-shaped slot 201, the first terminal 2 is designed to have a structure with the first V-shaped slot 201, the first terminal 2 is fixed by embedding the first hot melt plate 14 into the first V-shaped groove 201 after hot melting, so that the first terminal 2 has excellent holding power in the first terminal groove 12, the structure is simple, the signal transmission speed is high, the traditional locking plate for fixing the terminal position can be eliminated, and the SI performance (impedance and insertion loss, return loss and crosstalk) of the terminal can be effectively improved.

The second terminal 3 includes a second welding portion 31, a fourth transmission portion 32, a third bending portion 33, a fifth transmission portion 34, a fourth bending portion 35, a sixth transmission portion 36, a sixth bending portion 37, a seventh transmission portion 38, and a second contact portion 39, the second contact portion 39 is disposed near one side of the first terminal 2, the third bending portion 33, the fifth transmission portion 34, and the fourth bending portion 35 are engaged with each other to form a second V-shaped groove 301 on the left side, the fourth bending portion 35, the sixth transmission portion 36, and the sixth bending portion 37 are engaged with each other to form a third V-shaped groove 302 on the right side, the slot 11 is connected with a second thermal fusion plate 15, the second thermal fusion plate 15 is formed inside the third V-shaped groove 302, the second terminal 3 is designed to have a structure with the second V-shaped groove 301 on the left side and the third V-shaped groove 302 on the right side, the second thermal fusion plate 15 is embedded into the third V-shaped groove 302 after thermal fusion, and a protrusion inside the second terminal groove 13 is embedded into the second V-shaped groove, the second terminal 3 has excellent holding force in the second terminal groove 13, simple structure and high signal transmission speed, and can eliminate the traditional locking plate for fixing the terminal position, thereby effectively improving the SI performance (impedance and insertion loss, return loss and crosstalk) of the terminal.

Preferably, socket 1 both ends all are connected with support 4, and support 4 bottom is fixed with backup pad 5, and backup pad 5 bottom is connected with supporting legs 6, and the welding of supporting legs 6 lower extreme utilizes the supporting role of backup pad 5 on circuit board 8 to design into horizontal grafting with slot 11, can make memory bank 7 transversely place after pegging graft, reduced holistic height.

Preferably, the bracket 4 is provided with a mounting groove 41 into which the support plate 5 is inserted.

The above embodiments only represent one embodiment of the present invention, and the description thereof is more specific and detailed, but not to be construed as limiting the scope of the present invention. It should be noted that, for those skilled in the art, without departing from the spirit of the present invention, several variations and modifications can be made, which are within the scope of the present invention. Therefore, the protection scope of the present invention should be subject to the appended claims.

Claims

1. The DDR4 type memory bank connector comprises a socket (1), wherein a slot (11) is formed in the socket (1), a plurality of first terminal grooves (12) and second terminal grooves (13) are formed in two ends of the slot (11) respectively, the first terminal grooves (12) and the second terminal grooves (13) are arranged in a staggered mode, first terminals (2) are fixed in the first terminal grooves (12), second terminals (3) are fixed in the second terminal grooves (13), the DDR4 type memory bank connector is characterized in that the first terminals (2) comprise first welding portions (21), first transmission portions (22), first bent portions (23), second transmission portions (24), second bent portions (25), third transmission portions (26) and first contact portions (27), the first contact portions (27) are arranged close to one sides of the second terminals (3), and the first bent portions (23), The left sides of the second transmission part (24) and the second bending part (25) are matched to form a first V-shaped groove (201), the second terminal (3) comprises a second welding part (31), a fourth transmission part (32), a third bending part (33), a fifth transmission part (34), a fourth bending part (35), a sixth transmission part (36), a sixth bending part (37), a seventh transmission part (38) and a second contact part (39), the second contact part (39) is arranged close to one side of the first terminal (2), the left sides of the third bending part (33), the fifth transmission part (34) and the fourth bending part (35) are matched to form a second V-shaped groove (301), and the right sides of the fourth bending part (35), the sixth transmission part (36) and the sixth bending part (37) are matched to form a third V-shaped groove (302).

2. The DDR4 type DRAM connector as claimed in claim 1, wherein a first thermal fuse plate (14) is connected to the socket (11), and the first thermal fuse plate (14) is formed inside the first V-shaped groove (201).

3. The DDR4 type DRAM connector as claimed in claim 1, wherein a second thermal fuse plate (15) is connected to the socket (11), and the second thermal fuse plate (15) is formed inside the third V-shaped groove (302).

4. The DDR4 type DRAM connector as claimed in claim 1, wherein two ends of the socket (1) are connected with a bracket (4), a support plate (5) is fixed at the bottom of the bracket (4), and a support leg (6) is connected at the bottom of the support plate (5).

5. DDR4 type DRAM connector as claimed in claim 4, wherein the bracket (4) is provided with mounting slots (41) for the support plate (5) to be inserted into.