CN211209980U - L ED driving structure - Google Patents
L ED driving structure Download PDFInfo
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- CN211209980U CN211209980U CN201921884520.8U CN201921884520U CN211209980U CN 211209980 U CN211209980 U CN 211209980U CN 201921884520 U CN201921884520 U CN 201921884520U CN 211209980 U CN211209980 U CN 211209980U
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- 230000005669 field effect Effects 0.000 claims abstract description 14
- 230000000087 stabilizing effect Effects 0.000 claims abstract description 5
- 239000003990 capacitor Substances 0.000 claims description 3
- 238000000034 method Methods 0.000 claims description 3
- 229910002601 GaN Inorganic materials 0.000 abstract 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 abstract 3
- 230000003247 decreasing effect Effects 0.000 description 5
- 101100100146 Candida albicans NTC1 gene Proteins 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000002238 attenuated effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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Abstract
The utility model provides an L ED drive structure, it is including an electric connection's a L ED module, a power supply circuit, a voltage stabilizing circuit, a temperature compensation return circuit and a gallium nitride field effect transistor, wherein power supply circuit is used for supplying current for L ED module, voltage stabilizing circuit includes a rectifier diode, a resistance and a Zener diode, and be connected to gallium nitride field effect transistor's gate pole through the temperature compensation return circuit, in order to provide stable voltage, the temperature compensation return circuit is including at least one resistance, a thermistor and a transistor are connected to gallium nitride field effect transistor's gate pole, in order to make L ED module still can keep its power unchangeable when voltage variation and temperature variation after the circular telegram.
Description
Technical Field
The present invention relates to L ED, and more particularly to a L ED driving circuit structure.
Background
The light emitting diode (L lighting diode, L ED) is generally used for lighting applications after technology advances and production cost is reduced due to the advantages of high efficiency, long lifetime, insusceptibility to breakage, fast response speed, high reliability and the like, and particularly, a high voltage L ED with high voltage and small current is widely used in the market today, and a high voltage L ED has L ED matrix built in a single chip to have the function of adjusting voltage and current, so that a L ED light source achieves a single-output light source effect due to the single chip to improve optical design, simplify a package process of a gan L ED and improve luminous efficiency, but a high voltage L ED has a high requirement for voltage stability, and particularly, a switching element in a driving circuit, namely, a Metal Oxide Semiconductor Field Effect Transistor (MOSFET), but a new switching element component, namely, a gan fet (gan fet, is emerging, but the new gan fet has higher efficiency, faster switching frequency and a smaller package size, and therefore, a relatively strict driving circuit for driving a gate voltage stabilizing a gate L ED power supply is generally required.
However, L ED generates a lot of heat energy to increase temperature, and due to the nature of its semiconductor material, the voltage and power are decreased, and the high voltage L ED and the driving circuit are integrated on a circuit board to reduce the volume, the high heat generated by L ED lighting will inevitably affect the electronic components of the driving circuit, and if it is not desired to solve the effect of heat generated by L ED lamp on the peripheral electronic components, the better voltage regulator circuit is not enough to compensate the attenuated power, so that the operation performance of L ED lamp is still low.
SUMMERY OF THE UTILITY MODEL
An object of the present invention is to provide an L ED driving structure, which utilizes a temperature compensation circuit in a voltage stabilizing circuit to maintain a fixed power at L ED during voltage variation and temperature variation, thereby preventing L ED from lighting up and then causing the power to decrease due to the temperature generated by the electronic components of the driving circuit.
Another objective of the present invention is to provide an L ED driving structure, wherein a temperature compensation circuit is designed in a voltage regulator circuit to provide a more stable and more strict voltage for the gate of the gan field effect transistor, so as to improve the better working performance of the gan field effect transistor and maintain the L ED at a constant power.
To achieve the aforesaid objective, the present invention provides an L ED driving structure, which includes an electrically connected L ED module, a power supply circuit, a voltage regulator circuit, a temperature compensation circuit and a gan field effect transistor, wherein:
the power supply circuit is used for supplying current to the L ED module;
the voltage regulator circuit comprises a rectifying diode, a resistor and a Zener diode, and is connected to the GaN field effect transistor through the temperature compensation loop for providing stable voltage;
the temperature compensation circuit includes at least one resistor, a thermistor and a transistor connected to the gate of the GaN FET to maintain the L ED module's power unchanged when it generates heat after it is powered on.
Preferably, the voltage regulator circuit further includes a capacitor.
Preferably, the L ED module is fabricated by a die-attach packaging technique.
In one embodiment, the L ED module is a high voltage L ED for vehicle use.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, a brief description will be given below of the drawings required to be used in the description of the embodiments or the prior art, and it is obvious that the drawings in the following description are some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
Fig. 1 is a schematic circuit diagram of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the drawings in the embodiments of the present invention are combined below to clearly and completely describe the technical solutions in the embodiments of the present invention, and obviously, the described embodiments are some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative efforts belong to the protection scope of the present invention.
Referring to fig. 1, a L ED driving structure according to the present invention includes a L ED module 1, a power supply circuit 2, a voltage regulator circuit 3, a temperature compensation circuit 4 and a GaN FET 5(GaN FET) electrically connected to each other.
In view of the above, the power supply circuit 2 includes a plurality of diodes for supplying current to the L ED module 1, in this embodiment, the power supply circuit 2 has a plurality of rectifying diodes for supplying a constant current to the L ED module, the regulator circuit 3 includes a rectifying diode D1, a resistor R1, a capacitor C1 and a Zener diode ZD1, and is connected to the gate of the GaN FET 5 for providing a stable voltage, the temperature compensation circuit 4 includes two resistors R2, R3, a thermistor NTC1 and a transistor Q1 connected to the regulator circuit 3, and the transistor Q1 is connected to the gate of the GaN FET 5 for compensating the voltage when the temperature changes.
When the L ED module 1 is powered on, it generates heat energy to raise the temperature, at this time, the voltage of the L ED module 1 is decreased, the on-resistance of the GaN field effect transistor 5 is increased, the current is decreased, and the overall power is decreased, however, with the above circuit structure, after the temperature is increased, the resistance value of the thermistor NTC1 is decreased, the voltage of the transistor Q1 and the GaN field effect transistor 5 is increased, and the current is increased, which is against the above-mentioned situation of thermal attenuation, and the working efficiency of the L ED module 1 can be maintained.
The utility model is characterized in that the temperature compensation circuit 4 can not cause the unstable voltage result due to the temperature variation, which not only can provide the stable voltage for L ED module 1, but also can drive L ED module 1 with the stable voltage for GaN field effect transistor 5.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; although the present invention has been described in detail with reference to the foregoing embodiments, it should be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; such modifications and substitutions do not depart from the spirit and scope of the present invention.
Claims (5)
1. An L ED driving structure, comprising a L ED module, a power supply circuit, a voltage regulator circuit, a temperature compensation circuit and a GaN FET electrically connected, wherein:
the power supply circuit is used for supplying current to the L ED module;
the voltage regulator circuit comprises a rectifying diode, a resistor and a Zener diode, and is connected to the gate of the GaN field effect transistor through a temperature compensation loop to provide a stable voltage;
the temperature compensation loop comprises at least one resistor, a thermistor and a transistor which are connected with the voltage stabilizing circuit and are connected with the gate of the GaN field effect transistor, and the voltage of the GaN field effect transistor is compensated when the temperature changes, so that the L ED module keeps the power unchanged when generating heat after being electrified.
2. The L ED driving structure of claim 1, wherein the regulator circuit further includes a capacitor.
3. The L ED driving structure of claim 1, wherein the power supply circuit has a plurality of rectifying diodes for supplying a constant current to the L ED module.
4. The L ED driving structure according to claim 1, wherein the L ED module is fabricated by a direct chip package (CSP) technique.
5. The L ED driving structure of claim 1, wherein the L ED module is a vehicle high voltage L ED.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921884520.8U CN211209980U (en) | 2019-11-04 | 2019-11-04 | L ED driving structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921884520.8U CN211209980U (en) | 2019-11-04 | 2019-11-04 | L ED driving structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN211209980U true CN211209980U (en) | 2020-08-07 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201921884520.8U Expired - Fee Related CN211209980U (en) | 2019-11-04 | 2019-11-04 | L ED driving structure |
Country Status (1)
| Country | Link |
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| CN (1) | CN211209980U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113268099A (en) * | 2021-04-27 | 2021-08-17 | 深圳市至正电子有限责任公司 | Solid-state direct-current voltage reference circuit |
-
2019
- 2019-11-04 CN CN201921884520.8U patent/CN211209980U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113268099A (en) * | 2021-04-27 | 2021-08-17 | 深圳市至正电子有限责任公司 | Solid-state direct-current voltage reference circuit |
| WO2022228407A1 (en) * | 2021-04-27 | 2022-11-03 | 南通至正电子有限公司 | Solid-state direct-current voltage reference circuit |
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| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20200807 |
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| CF01 | Termination of patent right due to non-payment of annual fee |